JP2706690B2 - Film forming method and film forming apparatus - Google Patents
Film forming method and film forming apparatusInfo
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- JP2706690B2 JP2706690B2 JP63272456A JP27245688A JP2706690B2 JP 2706690 B2 JP2706690 B2 JP 2706690B2 JP 63272456 A JP63272456 A JP 63272456A JP 27245688 A JP27245688 A JP 27245688A JP 2706690 B2 JP2706690 B2 JP 2706690B2
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- Prior art keywords
- gas
- substrate
- processed
- pressure
- film forming
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Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、成膜方法および成膜装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a film forming method and a film forming apparatus.
（従来の技術） 一般に、半導体製造工程においては、被処理基板例え
ば半導体ウエハに膜例えばSiO2膜を成膜する方法とし
て、大別して熱酸化により直接半導体ウエハ表面のシリ
コンを酸化して成膜する方法と、被着形成方法の２種類
がある。(Prior Art) In general, in a semiconductor manufacturing process, as a method of forming a film, for example, an SiO 2 film on a substrate to be processed, for example, a semiconductor wafer, the silicon is directly oxidized by thermal oxidation to form a film. There are two types: a method and a deposition method.
また、被着形成方法としては、チャンバ内に所定の反
応ガス、例えばSiH4と酸素とを流通させ、この反応ガス
の反応によりSiO2を形成するCVDによる方法、真空中で
直接SiO2を付着させるスパッタによる方法、有機シラン
化合物のアルコール溶液を塗布、ベークしてSiO2を形成
するスピンオングラスによる方法等がある。Further, as the deposition method for forming the adhesion predetermined reaction gas into the chamber, for example by circulating the SiH 4 and oxygen, the method according to CVD for forming the SiO 2 by reaction of the reaction gas, the direct SiO 2 in vacuo And a spin-on-glass method in which an alcohol solution of an organic silane compound is applied and baked to form SiO 2 .
このような成膜方法のうち、CVDによる方法には、大
別して常圧雰囲気下で成膜を行う常圧CVDと、減圧雰囲
気下で成膜を行う減圧CVDの２種類の方法がある。さら
に、減圧CVDにおいては、プラズマを用いたプラズマCV
D、紫外線等の光を用いた光CVD等の方法もある。Among such film forming methods, there are roughly two types of CVD methods: a normal pressure CVD in which a film is formed under a normal pressure atmosphere, and a low pressure CVD in which a film is formed under a reduced pressure atmosphere. Furthermore, in low pressure CVD, plasma CV using plasma
There are also methods such as photo-CVD using light such as D and ultraviolet light.
（発明が解決しようとする課題） 上述のように、従来のCVDによる成膜方法では、半導
体ウエハ等の被処理基板に常圧雰囲気あるいは減圧雰囲
気で所定の処理ガスを作用させて処理を行っている。こ
れは、例えば毒性のあるシランガス（SiH4）等が外部に
漏れることを防止するという意味もある。(Problems to be Solved by the Invention) As described above, in the conventional film forming method by CVD, a process is performed by applying a predetermined processing gas to a substrate to be processed such as a semiconductor wafer in a normal pressure atmosphere or a reduced pressure atmosphere. I have. This also means that, for example, toxic silane gas (SiH 4 ) is prevented from leaking outside.
しかしながら、このような成膜方法においても、さら
に成膜速度の高速化を図り、スループットを向上させる
ことが望まれている。However, even in such a film forming method, it is desired to further increase the film forming speed and improve the throughput.
本発明は、かかる従来の事情に対処してなされたもの
で、従来に較べて成膜速度の高速化を図ることのできる
成膜方法および成膜装置を提供しようとするものであ
る。The present invention has been made in view of such a conventional situation, and an object of the present invention is to provide a film forming method and a film forming apparatus capable of increasing the film forming speed as compared with the related art.
［発明の構成］ （課題を解決するための手段） すなわち本発明は、チャンバ内に収容された被処理基
板にSiO2膜を被着形成するにあたり、 常圧より高い圧力の有機シランガスと、常圧より高い
圧力のオゾンを含む酸素ガスとを混合して混合ガスとし
た後、前記被処理基板に対向する如く設けられ、前記被
処理基板との間隔を近接および離間可能とされたガス噴
出機構から、前記被処理基板に向けて常圧より高圧の前
記混合ガスを噴出させ、前記被処理基板にSiO2膜を形成
することを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, according to the present invention, in forming an SiO 2 film on a substrate to be processed accommodated in a chamber, an organic silane gas having a pressure higher than normal pressure and A gas ejecting mechanism provided after mixing an oxygen gas containing ozone at a pressure higher than the pressure to form a mixed gas and facing the substrate to be processed, and capable of approaching and separating from the substrate to be processed. Then, the mixed gas having a pressure higher than the normal pressure is jetted toward the substrate to be processed to form an SiO 2 film on the substrate to be processed.
請求項２の発明は、被処理基板にSiO2膜を被着形成す
る成膜装置であって、 前記被処理基板を収容するチャンバと、 前記被処理基板を加熱する加熱機構と、 前記被処理基板に対向する如く設けられたガス噴出機
構と、 前記被処理基板と前記ガス噴出機構との間隔を近接お
よび離間させる昇降機構と、 常圧より高い圧力の有機シランガスを供給する有機シ
ラン供給装置と、常圧より高い圧力のオゾンを含む酸素
ガスを供給する酸素供給装置とを備え、前記有機シラン
ガスと前記オゾンを含む酸素ガスをとを混合して混合ガ
スとした後、前記ガス噴出機構から、前記被処理基板に
向けて、常圧より高圧の前記混合ガスを噴出させる反応
ガス供給機構と を具備したことを特徴とする。The invention of claim 2 is a film forming apparatus for forming an SiO 2 film on a substrate to be processed, wherein a chamber for accommodating the substrate to be processed, a heating mechanism for heating the substrate to be processed, A gas ejection mechanism provided so as to face the substrate, an elevating mechanism for moving the substrate to be processed and the gas ejection mechanism closer and further away, and an organic silane supply device for supplying an organic silane gas having a pressure higher than normal pressure. An oxygen supply device for supplying oxygen gas containing ozone at a pressure higher than normal pressure, and after mixing the organosilane gas and the oxygen gas containing ozone to form a mixed gas, from the gas ejection mechanism, A reaction gas supply mechanism for ejecting the mixed gas having a pressure higher than normal pressure toward the substrate to be processed.
請求項３の発明は、請求項２記載の成膜装置におい
て、 前記ガス噴出機構は、交互に設けられた複数の噴出用
開口と複数の排気用開口とを具備したことを特徴とす
る。According to a third aspect of the present invention, in the film forming apparatus of the second aspect, the gas ejection mechanism includes a plurality of ejection openings and a plurality of exhaust openings provided alternately.
（作 用） 上記構成の本発明の成膜方法および成膜装置では、被
処理基板を収容するチャンバ内に、例えばTEOS等の有機
シランとオゾンを含む酸素等の反応ガスを圧入し、この
チャンバ内を高圧雰囲気として、被処理基板に所定の
膜、例えばSiO2膜を被着形成するので、従来に較べて成
膜速度の高速化を図ることができる。また、例えば上記
のTEOS等の有機シランを用いれば、この有機シランが万
一外部に漏れたとしても、シランを用いた場合のような
大きな問題が生じることはない。(Operation) In the film forming method and the film forming apparatus of the present invention having the above-described configuration, a reaction gas such as an organic silane such as TEOS and oxygen containing ozone is pressed into a chamber for accommodating a substrate to be processed. Since a predetermined film, for example, an SiO 2 film is formed on the substrate to be processed by setting the inside to a high-pressure atmosphere, the film-forming speed can be increased as compared with the related art. Further, for example, if the above-mentioned organic silane such as TEOS is used, even if the organic silane leaks to the outside, no serious problem as in the case of using silane will occur.
（実施例） 以下、本発明の実施例を図面を参照して説明する。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
CVD装置１のチャンバ２内には、被処理基板例えば半
導体ウエハ３が載置され、この半導体ウエハ３を加熱す
る加熱板４と、この加熱板４に対向する如くガス拡散板
５が設けられている。A substrate to be processed, for example, a semiconductor wafer 3 is placed in a chamber 2 of the CVD apparatus 1, and a heating plate 4 for heating the semiconductor wafer 3 and a gas diffusion plate 5 facing the heating plate 4 are provided. I have.
上記ガス拡散板５には、半導体ウエハ３との間隔を所
望の距離に設定可能とする如く拡散板昇降装置６が接続
されている。また、このガス拡散板５には、処理ガス
（オゾンを含むガス）を噴出させるたの開口および排気
ガスを排出させるための開口として、例えば噴出用スリ
ット７と排気用スリット８が交互に多数設けられてい
る。A diffusion plate elevating device 6 is connected to the gas diffusion plate 5 so that the distance between the gas diffusion plate 5 and the semiconductor wafer 3 can be set to a desired distance. The gas diffusion plate 5 is provided with a large number of slits 7 for ejection and a plurality of slits 8 for exhaust, for example, alternately as openings for ejecting processing gas (gas containing ozone) and openings for discharging exhaust gas. Have been.
また、上記噴出用スリット７には、例えばプランジャ
ーポンプ、ベローズポンプ、ダイヤフラムポンプ等から
なる昇圧装置９が接続されている。この昇圧装置９に
は、酸素供給装置10から供給される酸素からオゾンを発
生させるオゾン発生装置11および例えばTEOS等の有機シ
ランを供給する有機シラン供給装置12が、それぞれ流量
調節装置13、14を介して接続されている。なお、オゾン
発生装置11としては、例えば無声放電、コロナ放電、グ
ロー放電等によってオゾンを発生させるオゾン発生装置
等を用いることができる。Further, a pressure increasing device 9 including, for example, a plunger pump, a bellows pump, and a diaphragm pump is connected to the ejection slit 7. The pressure increasing device 9 includes an ozone generator 11 for generating ozone from oxygen supplied from an oxygen supply device 10 and an organic silane supply device 12 for supplying an organic silane such as TEOS, for example. Connected through. As the ozone generator 11, for example, an ozone generator that generates ozone by silent discharge, corona discharge, glow discharge, or the like can be used.
一方、排気用スリット８は、圧力調節装置15および排
ガス除害装置16を介して例えば工場排気系等に接続され
ている。On the other hand, the exhaust slit 8 is connected to, for example, a factory exhaust system or the like via a pressure adjusting device 15 and an exhaust gas removing device 16.
また、加熱板４には、基板昇降装置17に接続された複
数例えば３本のピ18が加熱板４を貫通する如く設けられ
ており、半導体ウエハ３のロード・アンロード時に、こ
れらのピン18上に半導体ウエハ３を保持するよう構成さ
れている。Further, the heating plate 4 is provided with a plurality of, for example, three pins 18 connected to the substrate lifting / lowering device 17 so as to penetrate the heating plate 4. When the semiconductor wafer 3 is loaded / unloaded, these pins 18 are provided. It is configured to hold the semiconductor wafer 3 thereon.
さらに、チャンバ２の側部には、ロード・アンロード
用の開閉機構19が設けられており、この開閉機構19の側
方には、半導体ウエハ３をチャンバ２内にロード・アン
ロードするための基板搬送装置20が設けられている。Further, an opening / closing mechanism 19 for loading / unloading is provided on a side of the chamber 2, and a side for loading / unloading the semiconductor wafer 3 into / from the chamber 2 is provided beside the opening / closing mechanism 19. A substrate transfer device 20 is provided.
この実施例では、上記構成のCVD装置１を用いて、次
のようにして半導体ウエハ３表面に例えばSiO2膜の被着
形成を行う。In this embodiment, for example, an SiO 2 film is formed on the surface of the semiconductor wafer 3 by using the CVD apparatus 1 having the above-described configuration.
すなわちまず、開閉機構19を開として、基板は搬送装
置20により、チャンバ２内の加熱板４上方に半導体ウエ
ハ３を搬送する。なお、この時予め拡散板昇降装置６に
よりガス拡散板５を上昇させておき、加熱板４とガス拡
散板５との間に充分な間隙を設けておく。That is, first, the opening / closing mechanism 19 is opened, and the substrate is transferred by the transfer device 20 to the semiconductor wafer 3 above the heating plate 4 in the chamber 2. At this time, the gas diffusion plate 5 is raised by the diffusion plate lifting device 6 in advance, and a sufficient gap is provided between the heating plate 4 and the gas diffusion plate 5.
そして、基板昇降装置17によりピン18を上昇させ、基
板搬送装置20からピン18上に半導体ウエハ３を受け渡
す。Then, the pins 18 are raised by the substrate elevating device 17, and the semiconductor wafer 3 is transferred from the substrate transfer device 20 onto the pins 18.
この後、基板は搬送装置20の搬送アームを後退させて
開閉機構19を閉とするとともに、基板昇降装置17により
ピン18を下降させて加熱板４上に半導体ウエハ３を載置
し、拡散板昇降装置６によりガス拡散板５と半導体ウエ
ハ３との間隔を所定間隔に設定する。Thereafter, the transfer arm of the transfer device 20 is retracted to close the opening / closing mechanism 19, and the pins 18 are lowered by the substrate lift device 17 to place the semiconductor wafer 3 on the heating plate 4, and the diffusion plate The elevating device 6 sets the interval between the gas diffusion plate 5 and the semiconductor wafer 3 to a predetermined interval.
しかる後、加熱板４により半導体ウエハ３を所定温度
に加熱するとともに、オゾン発生装置11から供給される
オゾンを含む酸素ガスと、有機シラン供給装置12から供
給される有機シラン例えばTEOSガスとを、それぞれ流量
調節装置13、14によって例えば３〜30/minの所定流量
に調節し、昇圧装置９によって例えば２〜20ata程度に
昇圧しガス拡散板５の噴出用スリット７から半導体ウエ
ハ３に向けて噴出させるとともに、排気用スリット８か
ら排気し、成膜処理を行う。Thereafter, the semiconductor wafer 3 is heated to a predetermined temperature by the heating plate 4, and the oxygen gas containing ozone supplied from the ozone generator 11 and the organic silane, for example, TEOS gas supplied from the organic silane supply device 12, are mixed with each other. The flow rate is adjusted to a predetermined flow rate of, for example, 3 to 30 / min by the flow rate adjusting devices 13 and 14, respectively. At the same time, the film is evacuated from the exhaust slit 8 to perform a film forming process.
なお、排ガス内に残存するオゾンは、排ガス除害装置
16によって分解された後、工場排気系等に送られる。ま
た、上記排気は、圧力調節装置15によりチャンバ２内の
圧力を上記所定圧力（例えば２〜20ata）に保持するよ
うに制御しながら行う。The ozone remaining in the exhaust gas is removed by the exhaust gas abatement system.
After being decomposed by 16, it is sent to the factory exhaust system. Further, the exhaust is performed while controlling the pressure in the chamber 2 to be maintained at the predetermined pressure (for example, 2 to 20 at) by the pressure adjusting device 15.
このように、この実施例のCVD装置１では、高圧雰囲
気下で成膜処理を行うことができ、従来に比べて高い反
応ガス密度で高い成膜密度を得ることができる。また、
高い成膜速度により、プロセスの低温化を図ることも可
能となる。さらに、例えばTEOS等の有機シランを用いれ
ば、この有機シランが万一外部に漏れたとしても、シラ
ンを用いた場合のような大きな問題を生じることはな
い。As described above, in the CVD apparatus 1 of this embodiment, a film formation process can be performed in a high-pressure atmosphere, and a higher film formation density can be obtained with a higher reaction gas density than in the past. Also,
The high film forming rate also enables the process to be operated at a low temperature. Furthermore, if an organic silane such as TEOS is used, even if the organic silane leaks to the outside, there is no major problem as in the case of using silane.
なお、この実施例のCVD装置１では、昇圧装置９をオ
ゾン発生装置11の下流側に設けてあるので、オゾン発生
装置11は従来と同様に構成された常圧用の装置を用いる
ことができる。また、例えば第２図に示すCVD装置1aの
ように、昇圧装置９を使用せずに、高圧酸素供給装置10
aおよび耐圧性を有するように構成された高圧オゾン発
生装置11aと、高圧有機シラン供給装置12aを用いること
もできる。In the CVD apparatus 1 of this embodiment, since the pressure increasing device 9 is provided on the downstream side of the ozone generating device 11, the ozone generating device 11 can be a normal pressure device configured similarly to the conventional one. Further, for example, as in the CVD apparatus 1a shown in FIG.
The high-pressure ozone generator 11a and the high-pressure organic silane supply device 12a configured to have pressure resistance and a pressure can be used.
［発明の効果］ 上述のように、本発明の成膜方法および成膜装置によ
れば、従来に較べて成膜速度の高速化を図ることがで
き、スループットの向上を図ることができる。[Effects of the Invention] As described above, according to the film forming method and the film forming apparatus of the present invention, the film forming speed can be increased as compared with the related art, and the throughput can be improved.
第１図は本発明の成膜方法の一実施例を説明するための
CVD装置の構成を示す図、第２図は第１図に示すCVD装置
の変形例の構成を示す図である。 １……CVD装置、２……チャンバ、３……半導体ウエ
ハ、４……加熱板、５……ガス拡散板、６……拡散板昇
降装置、７……噴出用スリット、８……排気用スリッ
ト、９……昇圧装置、10……酸素供給装置、11……オゾ
ン発生装置、12……有機シラン供給装置、13,14……流
量調節装置、15……圧力調節装置、16……排ガス除害装
置、17……基板昇降装置、18……ピン、19……開閉機
構、20……基板搬送装置。FIG. 1 is a view for explaining one embodiment of a film forming method of the present invention.
FIG. 2 is a view showing a configuration of a CVD apparatus, and FIG. 2 is a view showing a configuration of a modification of the CVD apparatus shown in FIG. DESCRIPTION OF SYMBOLS 1 ... CVD apparatus, 2 ... chamber, 3 ... semiconductor wafer, 4 ... heating plate, 5 ... gas diffusion plate, 6 ... diffusion plate lifting / lowering device, 7 ... slit for ejection, 8 ... exhaust Slit, 9 ... Pressure increasing device, 10 ... Oxygen supplying device, 11 ... Ozone generating device, 12 ... Organic silane supplying device, 13,14 ... Flow regulating device, 15 ... Pressure regulating device, 16 ... Exhaust gas Detoxification device, 17: substrate lifting device, 18: pin, 19: opening / closing mechanism, 20: substrate transfer device.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−255371（ＪＰ，Ａ) 特開 昭61−77695（ＪＰ，Ａ) 実開 昭63−65218（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-255371 (JP, A) JP-A-61-77695 (JP, A)
Claims (3)
膜を披着形成するにあたり、 常圧より高い圧力の有機シランガスと、常圧より高い圧
力のオゾンを含む酸素ガスとを混合して混合ガスとした
後、前記被処理基板に対向する如く設けられ、前記被処
理基板との間隔を近接および離間可能とされたガス噴出
機構から、前記被処理基板に向けて常圧より高圧の前記
混合ガスを噴出させ、前記被処理基板にSiO2膜を形成す
ることを特徴とする成膜方法。A substrate to be processed accommodated in a chamber is made of SiO 2.
In forming the film, an organic silane gas having a pressure higher than normal pressure and an oxygen gas containing ozone having a pressure higher than normal pressure are mixed to form a mixed gas, and the mixed gas is provided so as to face the substrate to be processed. Forming a SiO 2 film on the substrate by ejecting the mixed gas having a pressure higher than normal pressure toward the substrate from a gas ejecting mechanism capable of approaching and separating the substrate from the substrate. A film forming method.
置であって、 前記被処理基板を収容するチャンバと、 前記被処理基板を加熱する加熱機構と、 前記被処理基板に対向する如く設けられたガス噴出機構
と、 前記被処理基板と前記ガス噴出機構との間隔を近接およ
び離間させる昇降機構と、 常圧より高い圧力の有機シランガスを供給する有機シラ
ン供給装置と、常圧より高い圧力のオゾンを含む酸素ガ
スを供給する酸素供給装置とを備え、前記有機シランガ
スと前記オゾンを含む酸素ガスをとを混合して混合ガス
とした後、前記ガス噴出機構から、前記被処理基板に向
けて、常圧より高圧の前記混合ガスを噴出させる反応ガ
ス供給機構と を具備したことを特徴とする成膜装置。 2. A film forming apparatus for depositing and forming an SiO 2 film on a substrate to be processed, comprising: a chamber for accommodating the substrate to be processed; a heating mechanism for heating the substrate to be processed; A gas ejecting mechanism provided so as to be opposed to, an elevating mechanism for moving the substrate to be processed and the gas ejecting mechanism closer to and away from each other, an organic silane supply device for supplying an organic silane gas at a pressure higher than normal pressure, An oxygen supply device for supplying an oxygen gas containing ozone at a pressure higher than the pressure, and mixing the organosilane gas and the oxygen gas containing the ozone to form a mixed gas. A reaction gas supply mechanism for ejecting the mixed gas having a pressure higher than the normal pressure toward the processing substrate.
口と複数の排気用開口とを具備したことを特徴とする成
膜装置。3. The film forming apparatus according to claim 2, wherein said gas ejection mechanism includes a plurality of ejection openings and a plurality of exhaust openings provided alternately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63272456A JP2706690B2 (en) | 1988-10-28 | 1988-10-28 | Film forming method and film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63272456A JP2706690B2 (en) | 1988-10-28 | 1988-10-28 | Film forming method and film forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02122076A JPH02122076A (en) | 1990-05-09 |
| JP2706690B2 true JP2706690B2 (en) | 1998-01-28 |
Family
ID=17514170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63272456A Expired - Fee Related JP2706690B2 (en) | 1988-10-28 | 1988-10-28 | Film forming method and film forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2706690B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
| JP3121131B2 (en) * | 1991-08-09 | 2000-12-25 | アプライド マテリアルズ インコーポレイテッド | Low temperature and high pressure silicon deposition method |
| JP2009235496A (en) * | 2008-03-27 | 2009-10-15 | Tokyo Electron Ltd | Raw material gas feed system, and film deposition device |
| JP5851149B2 (en) | 2011-08-08 | 2016-02-03 | 株式会社ニューフレアテクノロジー | Film forming apparatus and film forming method |
| US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
| US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
| US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6177695A (en) * | 1984-09-20 | 1986-04-21 | Applied Material Japan Kk | Vapor growth method |
| JPS6365218U (en) * | 1986-10-17 | 1988-04-30 | ||
| JPS63255372A (en) * | 1987-04-13 | 1988-10-21 | Nec Corp | Method and apparatus for chemical vapor growth of thin film |
-
1988
- 1988-10-28 JP JP63272456A patent/JP2706690B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02122076A (en) | 1990-05-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |