JP2697060B2 - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JP2697060B2 JP2697060B2 JP68289A JP68289A JP2697060B2 JP 2697060 B2 JP2697060 B2 JP 2697060B2 JP 68289 A JP68289 A JP 68289A JP 68289 A JP68289 A JP 68289A JP 2697060 B2 JP2697060 B2 JP 2697060B2
- Authority
- JP
- Japan
- Prior art keywords
- input terminal
- integrated circuit
- semiconductor integrated
- terminal
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は静電気放電に対する保護回路を有する半導体
集積回路に関する。Description: TECHNICAL FIELD The present invention relates to a semiconductor integrated circuit having a protection circuit against electrostatic discharge.
従来この値の半導体集積回路の静電気放電に対する対
策は、第２図に示すように入力端子10と電源端子11,接
地端子12間にダイオード1,2を接続したものであった。Conventionally, as a countermeasure against electrostatic discharge of a semiconductor integrated circuit having this value, diodes 1 and 2 are connected between an input terminal 10, a power supply terminal 11 and a ground terminal 12, as shown in FIG.
上述した従来の半導体集積回路装置は、入力端子と電
源，接地端子間のダイオード1,2により、静電気のエネ
ルギーを吸収させることにより、内部回路を保護しよう
とするものであるが、前記ダイオード1,2はPN接合が必
然的に有する容量を持ち、内部回路３のインピーダンス
が低いときは、前記保護用ダイオードの接合容量を静電
気エネルギーが充電し終る前に内部回路が破壊するとい
う不具合を有していた。The conventional semiconductor integrated circuit device described above is designed to protect the internal circuit by absorbing static electricity energy by the diodes 1 and 2 between the input terminal and the power and ground terminals. 2 has a capacitance that the PN junction has inevitably, and when the impedance of the internal circuit 3 is low, the internal circuit is destroyed before electrostatic energy ends charging the junction capacitance of the protection diode. Was.
本発明の半導体集積回路は、入力端子と電源端子，接
地端子間にそれぞれダイオードを有し、さらに内部回路
の入力インピーダンスを大きくし前記ダイオードが確実
に静電気吸収の役目を果すため、入力端子と内部回路間
に前記ダイオードの持つ接合容量より大きな容量を持つ
コンデンサを有し、かつ前記コンデンサと並列に抵抗を
有している。The semiconductor integrated circuit of the present invention has a diode between the input terminal, the power supply terminal, and the ground terminal, further increases the input impedance of the internal circuit, and ensures that the diode plays a role of absorbing static electricity. A capacitor having a larger capacitance than the junction capacitance of the diode is provided between the circuits, and a resistor is provided in parallel with the capacitor.
第１図は本発明の一実施例の回路図である。 FIG. 1 is a circuit diagram of one embodiment of the present invention.
１は入力端子10と電源端子11間に接続されたダイオー
ドであって、電源端子−入力端子間の静電気吸収用であ
り、２は入力端子10と接地端子12間に接続されたダイオ
ードであって接地端子−入力端子間の静電気吸収であ
る。３は内部回路であり、４は入力端子と内部回路間に
接続されたコンデンサであり、その容量はダイオード1,
2のいずれの接合容量よりも値を持ち、保護用ダイオー
ド1,2が立上る前に内部回路が破壊するのを防ぐもので
あり、５は抵抗であり、入力端子と内部回路を直流的に
接続する働きを有する。1 is a diode connected between the input terminal 10 and the power supply terminal 11 for absorbing static electricity between the power supply terminal and the input terminal, and 2 is a diode connected between the input terminal 10 and the ground terminal 12. This is the absorption of static electricity between the ground terminal and the input terminal. Reference numeral 3 denotes an internal circuit, reference numeral 4 denotes a capacitor connected between the input terminal and the internal circuit, the capacity of which is a diode 1,
It has a value larger than the junction capacitance of any of 2 and prevents the internal circuit from being destroyed before the protection diodes 1 and 2 rise. It has the function of connecting.
以上本発明は、内部回路と入力端子間にコンデンサと
抵抗を接続して、内部回路のインピーダンスを上げ、入
力端子と電源端子，接地端子間に接続された静電破壊対
策用のダイオードが確実に動作することにより、静電気
による内部回路の破壊を防ぐことができるという効果が
ある。As described above, according to the present invention, a capacitor and a resistor are connected between the internal circuit and the input terminal to increase the impedance of the internal circuit, and the diode for preventing electrostatic breakdown connected between the input terminal, the power supply terminal and the ground terminal is surely provided. By operating, there is an effect that destruction of the internal circuit due to static electricity can be prevented.
第１図は本発明の半導体集積回路の等価回路図、第２図
は従来の半導体集積回路の一例を示す等価回路図であ
る。 １……入力端子−電源端子間保護用ダイオード、２……
入力端子−接地端子間保護用ダイオード、３……内部回
路、４……コンデンサ、５……抵抗。FIG. 1 is an equivalent circuit diagram of a semiconductor integrated circuit of the present invention, and FIG. 2 is an equivalent circuit diagram showing an example of a conventional semiconductor integrated circuit. 1 ... Diode for protection between input terminal and power supply terminal, 2 ...
Protective diode between input terminal and ground terminal, 3 ... internal circuit, 4 ... capacitor, 5 ... resistance.
Claims (1)
ドとなるように接続された第１のダイオードと、前記入
力端子と接地端子間に入力端子がカソードとなるように
接続された第２のダイオードと、前記第1,第２のダイオ
ードの有する接合容量より大きな容量を持ち前記入力端
子と内部回路間に接続されたコンデンサと、前記コンデ
ンサと並列に抵抗とを有することを特徴とする半導体集
積回路。A first diode connected between the input terminal and the power supply terminal such that the input terminal is an anode; and a second diode connected between the input terminal and the ground terminal such that the input terminal is a cathode. A semiconductor having a larger capacitance than the junction capacitance of the first and second diodes, a capacitor connected between the input terminal and an internal circuit, and a resistor in parallel with the capacitor. Integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP68289A JP2697060B2 (en) | 1989-01-04 | 1989-01-04 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP68289A JP2697060B2 (en) | 1989-01-04 | 1989-01-04 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02180073A JPH02180073A (en) | 1990-07-12 |
| JP2697060B2 true JP2697060B2 (en) | 1998-01-14 |
Family
ID=11480530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP68289A Expired - Lifetime JP2697060B2 (en) | 1989-01-04 | 1989-01-04 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2697060B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100674951B1 (en) * | 2005-01-27 | 2007-01-26 | 삼성전자주식회사 | Semiconductor device having ESD protection circuit |
| MY175786A (en) | 2010-05-12 | 2020-07-08 | Nestle Sa | Capsule, system and method for preparing a beverage by centrifugation |
-
1989
- 1989-01-04 JP JP68289A patent/JP2697060B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02180073A (en) | 1990-07-12 |
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