JP2683553B2 - Pattern formation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial applications]

The present invention relates to a pattern forming method in which a region into which a material element different from that of the substrate is implanted is formed as a target pattern from the main surface side of the substrate.

[Prior art]

Conventionally, a substrate is locally irradiated with an ion beam of a material element different from that of the substrate from its main surface side, so that a material element different from that of the substrate is injected into the substrate from its main surface side. There has been proposed a pattern forming method (hereinafter, referred to as a conventional first pattern forming method) of forming an area having a desired pattern as a target pattern. Further, conventionally, in the state where a material layer made of a material different from that of the substrate is closely arranged on the main surface of the substrate, the material layer is applied from the side opposite to the substrate side by an electron beam having high energy. By locally irradiating toward the substrate, a region in which the material element forming the material layer is injected from the material layer under the irradiation region of the electron beam in the substrate,
A pattern forming method of forming a target pattern (hereinafter referred to as a second conventional pattern forming method) has also been proposed. According to the conventional first pattern forming method, the target pattern can be formed finely and highly accurately by using an ion beam of a material element different from that of the substrate, which has a small diameter. Further, according to the second conventional pattern forming method, an electron beam having a high energy is used in the form of a beam having a small diameter, and thus, the same purpose as in the conventional first pattern forming method is obtained. The pattern can be finely formed with high precision.

[Problems to be solved by the invention]

However, in the case of the conventional first pattern forming method,
The substrate has to be locally irradiated in the same plane pattern as the target pattern by an ion beam of a material element different from that of the substrate, which is disadvantageous. Further, in the case of the conventional first pattern forming method, if an ion beam having a small diameter is used as the ion beam of a material element different from that of the substrate, the target pattern can be formed with high accuracy. However, it has a drawback that it takes a long time to form a target pattern in a plane pattern having a relatively large area. Further, in the case of the second conventional pattern forming method, the material layer is locally localized in the same plane pattern as the target pattern by the electron beam having high energy as in the case of the conventional first pattern forming method. Since it had to be irradiated, it had a drawback that it was difficult. Further, in the case of the second conventional pattern formation method, the target pattern can be formed with high accuracy by using an electron beam having high energy in the form of a beam having a small diameter. As in the case of the first pattern forming method of 1), there is a drawback that it takes a long time to form a target pattern in a plane pattern having a relatively large area. Therefore, the present invention aims to provide a novel patterning method without the above-mentioned drawbacks.

[Means for Solving the Problems]

In the pattern forming method according to the first invention of the present application, the material layer, which is made of a material different from that of the substrate and is patterned, is closely arranged on the main surface of the substrate, Corresponding to the material layer below the material layer in the substrate by irradiating the substrate from the side opposite to the substrate side with an electron beam having high energy over the entire area. A region having a pattern and injecting the material element forming the material layer from the material layer is formed as a target pattern. In the pattern forming method according to the second invention of the present application, a plurality of material layers which are made of different materials from each other and are made of different materials from each other and are patterned are closely contacted on the main surface of the substrate. The plurality of material layers in the state of being arranged as described above, by irradiating the material layer toward the substrate from the side opposite to the substrate side with an electron beam having high energy over the entire regions thereof. In the substrate, under the plurality of material layers, a plurality of material elements each of which has a pattern corresponding to the plurality of material layers and which constitutes the plurality of material layers are respectively injected. The area is formed as a target pattern. The pattern forming method according to the third invention of the present application has a structure in which a plurality of material layers made of different materials from each other and different from each other are laminated on the main surface of the substrate, and the pattern is formed. In a state where the laminated body that has been made into a close contact is arranged in close contact, the entire laminated body is irradiated with an electron beam having high energy from the side opposite to the substrate side toward the substrate. As a result, the respective material elements constituting the laminate are injected into the substrate from the plurality of material layers having the pattern corresponding to the laminate and constituting the laminate under the laminate. The formed area is formed as a target pattern.

[Action / Effect]

According to the pattern forming method of the first invention of the present application,
As long as the material layer is irradiated with the electron beam having a high energy over the entire area, the material layer does not have to be locally irradiated in the same plane pattern as the target pattern, and the electron beam is irradiated onto the substrate. Even if the region where the upper material layer is not arranged is irradiated, the target pattern can be formed with high precision in the same plane pattern as the material layer or a plane pattern slightly larger than that. For this reason, the electron beam does not have to be used in the form of a beam having a small diameter to form the target pattern. Therefore, the target pattern can be formed in a plane pattern having a relatively large area. However, it can be easily formed in a shorter time than in the case of the first and second conventional pattern forming methods. Further, according to the pattern forming method according to the second invention of the present application, as in the case of the pattern forming method according to the first invention of the present application, a plurality of material layers are formed on each of the plurality of material layers by an electron beam having high energy. As long as the entire area is irradiated, it is not necessary to locally irradiate each of the plurality of material layers in the same plane pattern as the target pattern, and the electron beam is applied to the plurality of material layers on the substrate. Even if the region where is not arranged is irradiated, the target pattern can be formed with high precision in the same plane pattern as the plurality of material layers or in a plane pattern having a size slightly larger than that. Further, for this reason, as in the case of the pattern forming method according to the first aspect of the present invention, the electron beam does not have to be used in the form of a beam having a small diameter to form the target pattern. It is possible to easily form the pattern (1) in a short time as compared with the case of the conventional first and second pattern forming methods, when the planar pattern has a relatively large area. Further, it is possible to easily form a plurality of patterns different from each other in terms of the injected material elements as target patterns simultaneously and in a juxtaposed arrangement. Further, according to the pattern forming method according to the third invention of the present application, a laminated body composed of a plurality of material layers can be formed by an electron beam having high energy in accordance with the case of the pattern forming method according to the first invention of the present application. As long as the entire area is irradiated, the laminated body does not have to be locally irradiated in the same plane pattern as the target pattern, and the electron beam irradiates the area where the laminated body is not arranged on the substrate. However, the target pattern can be formed with high precision in the same plane pattern as the laminate or in a plane pattern slightly larger than that. Further, for this reason, as in the case of the pattern forming method according to the first aspect of the present invention, the electron beam does not have to be used in the form of a beam having a small diameter to form the target pattern. It is possible to easily form the pattern (1) in a short time as compared with the case of the conventional first and second pattern forming methods, when the planar pattern has a relatively large area. Further, a plurality of patterns having different planes in terms of the injected material elements, but having the same or a plane pattern larger than that, are simultaneously formed in a stacked arrangement as a target pattern. Alternatively, it is possible to easily form one pattern as a target pattern, which is a region in which the respective material elements forming the plurality of material layers forming the laminated body are mixed and implanted.

Embodiment of Pattern Forming Method According to First Invention of the Present Application Next, an embodiment of the pattern forming method according to the first invention of the present application will be described with reference to FIG. In the embodiment of the pattern forming method according to the first invention of the present application, a target pattern is formed as described below. That is, for example, a substrate 1 made of single crystal silicon having a flat main surface 2 is prepared in advance, and a substrate 1 made of, for example, single crystal silicon is patterned into a desired pattern and is different from the substrate 1. Material layer 5 consisting of
A material plate 3 having a structure for forming is prepared in advance (FIG. 1A). In this case, the material layer 5 is made of a desired material such as gold, nickel or cobalt. Then, the material plate 3 is positioned and arranged on the substrate 1 so that the material layer 5 of the material plate 3 is in close contact with the main surface 2 of the substrate 1 (FIG. 1B). Next, in that state, the material layer 5 of the material plate 3 is separated from the substrate 1 side by an electron beam 6 having a high energy of 2 MeV, for example, from an electron beam source (not shown) over the entire area. Irradiate from the opposite side towards the substrate 1 side and through the supporting plate 4 of the material plate 3, whereby within the substrate 1
Under the material layer 5, a region 7 having a planar pattern which is the same as or slightly larger than the material layer 5 and into which the material elements forming the material layer 5 are implanted is formed as a target pattern. (FIG. 1C). The above is the embodiment of the pattern forming method according to the first invention of the present application. According to the embodiment of the pattern forming method according to the first aspect of the present invention, the material layer 5 can be irradiated with the electron beam 6 having high energy over the entire area of the material layer 5. Even if the same plane pattern as the target pattern is not locally irradiated, or even if the electron beam 6 irradiates a region on the substrate 1 where the material layer 5 is not arranged, the target pattern is not changed. It is possible to form the same plane pattern as or a plane pattern slightly larger than that with high precision. Further, for this reason, the electron beam 6 does not have to be used in the form of a beam having a small diameter to form a target pattern, so that the target pattern can be a planar pattern having a relatively large area. As compared with the conventional first and second pattern forming methods, it can be easily formed in a short time.

[Embodiment of Pattern Forming Method According to Second Invention of Present Application] Next, an embodiment of the pattern forming method according to the second invention of the present application will be described with reference to FIG. In the embodiment of the pattern forming method according to the second invention of the present application, a target pattern is formed as described below. That is, for example, as in the case of the pattern forming method according to the first invention of the present application, a substrate 1 made of single crystal silicon having a flat main surface 2 is prepared in advance, and a supporting plate 4 made of, for example, single crystal silicon. A material plate having a configuration in which a plurality of, for example, two material layers 5A and 5B that are patterned in a desired pattern and that are different from the material of the substrate 1 and that are different from each other are arranged side by side. 3 is prepared in advance (FIG. 2A). In this case, a plurality of material layers 5A and
5B is made of, for example, a desired material selected from gold, nickel, cobalt and the like. Then, the material plate 3 is formed on the substrate 1 so that the material layers 5A and 5B of the material plate 3 are the main surface 2 of the substrate 1 as in the case of the embodiment of the pattern forming method according to the first invention of the present application. Position it so that it is in close contact with (Fig. 2B). Then, in that state, as in the case of the embodiment of the pattern forming method according to the first invention of the present application, the material layer 5A of the material plate 3 is
And 5B over the entire area by an electron beam 6 having a high energy such as 2 MeV from an electron beam source (not shown) from the side opposite to the substrate 1 side toward the substrate 1 side,
Irradiation is carried out through the supporting plate 4 of the material plate 3 so that a planar pattern, which is the same as or larger than the material layers 5A and 5B, respectively, is formed in the substrate 1 under the material layers 5A and 5B. Having and material layer 5A
A plurality of regions 7A and 7B, into which the material elements respectively constituting B and B are implanted, are formed as a target pattern (FIG. 2C). The above is the embodiment of the pattern forming method according to the second invention of the present application. According to the pattern forming method according to the second invention of the present application, as in the case of the embodiment of the pattern forming method according to the first invention of the present application, the material layers 5A and The material layers 5A and 5B need only be illuminated over their entire area for each of them.
5B, without having to locally irradiate each of them with the same planar pattern as the desired pattern,
Even if the electron beam irradiates a region on the substrate where the material layers 5A and 5B are not arranged, the target pattern is the same plane pattern as the material layers 5A and 5B or a plane pattern each larger than them, respectively. It can be formed with high precision. Therefore, as in the case of the embodiment of the pattern forming method according to the first invention of the present application, the electron beam 6 does not have to be used as a beam having a small diameter to form a target pattern. Since it is good, it is possible to form a target pattern into a planar pattern having a relatively large area.
It can be easily formed in a shorter time than in the case of the first and second conventional pattern forming methods. For this reason, the electron beam 6 does not have to be used in the form of a beam having a small diameter in order to form a target pattern as in the case of the embodiment of the pattern forming method according to the first invention of the present application. Therefore, it is possible to easily form a desired pattern in a short time as compared with the conventional first and second pattern forming methods, even when the planar pattern has a relatively large area. it can. Further, it is possible to easily form the two patterns of the regions 7A and 7B which are different from each other in terms of the injected material element, as a target pattern, simultaneously and in a juxtaposed arrangement.

Embodiment of Pattern Forming Method According to Third Invention of the Present Application Next, an embodiment of the pattern forming method according to the third invention of the present application will be described with reference to FIG. In the embodiment of the pattern forming method according to the third invention of the present application, a target pattern is formed as described below. That is, for example, as in the case of the embodiment of the pattern forming method according to the first invention of the present application, a substrate 1 made of single crystal silicon having a flat main surface 2 is prepared in advance, and a support made of, for example, single crystal silicon is provided. A laminate 8 having a structure in which the same material layers 5A and 5B as those in the embodiment of the pattern forming method according to the second invention of the present application are laminated on the working plate 4 and patterned into a desired pattern. A material plate 3 having a structure for forming is prepared in advance (FIG. 3A). Then, the material plate 3 is placed on the substrate 1 according to the case of the embodiment of the pattern forming method according to the first invention of the present application so that the laminated body 8 of the material plate 3 is brought into close contact with the main surface 2 of the substrate 1. Position and place (Fig. 3B). Next, in that state, according to the case of the embodiment of the pattern forming method according to the first invention of the present application, the laminate 8 of the material plate 3 is formed.
The electron beam 6 having a high energy such as 2 MeV from an electron beam source (not shown) over the entire area from the side opposite to the substrate 1 side toward the substrate 1 side and the material Irradiation is carried out through the supporting plate 4 of the plate 3, so that the substrate 1 has a planar pattern which is the same as or slightly larger than the laminated body 8 below the laminated body 8 and constitutes the laminated body 8. Two regions 7A and 7B (FIG. 3C) in which the respective material elements constituting them are respectively injected from the material layers 5A and 5B which are formed and which are laminated on each other,
Alternatively, a region 7AB (FIG. 3D) in which the respective material elements forming the material layers 5A and 5B are mixed and implanted, or regions similar to the above-mentioned regions 7A and
7AB (Fig. 3E) is formed as a target pattern (Figs. 3C and D). The above is the embodiment of the pattern forming method according to the third invention of the present application. According to the pattern forming method according to the third invention of the present application, the stacked body 8 is formed by the electron beam 6 having high energy in accordance with the case of the embodiment of the pattern forming method according to the third invention of the present application. As long as the whole area is irradiated, the laminated body 8 is not locally irradiated to the same plane pattern as the target pattern, and the electron beam 6 is applied to the substrate 1.
Even if the region where the upper laminated body 8 is not arranged is irradiated, the target pattern can be formed with high precision in the same planar pattern as the laminated body 8 or a plane pattern slightly larger than the same. Therefore, as in the case of the embodiment of the pattern forming method according to the first invention of the present application, the electron beam 6 does not have to be used as a beam having a small diameter to form a target pattern. Since it is good, it is possible to form a target pattern into a planar pattern having a relatively large area.
It can be easily formed in a shorter time than in the case of the first and second conventional pattern forming methods. Furthermore, two patterns, which are different from each other in terms of the injected material elements, but have the same or a plane pattern larger than that of the regions 7A and 7B, which are stacked on each other, are used as the target pattern at the same time. Region 7AB in which the respective material elements forming the two material layers 5A and 5B forming the laminated body 8 are mixed and implanted. To form one pattern as the target pattern (Fig. 3D),
It is possible to easily form the two patterns of the above-mentioned regions 7A and 7AB laminated on each other as a target pattern (FIG. 3E). In the above description, only a few examples of the present invention are shown, and the embodiment of the pattern forming method according to the first invention of the present application and the embodiment of the pattern forming method according to the third invention of the present application are combined, In the substrate 1, a region 7 of the embodiment of the pattern forming method according to the first invention of the present application and a region 7A and 7B of the embodiment of the pattern forming method of the third invention of the present application or the regions 7A and 7AB or the region 7AB are provided. It will be clear that, at the same time, they can also be formed in juxtaposed arrangement. Further, the embodiment of the pattern forming method according to the second invention of the present application and the embodiment of the pattern forming method according to the third invention of the present application are combined to carry out the pattern forming method according to the second invention of the present application in the substrate 1. Areas 7A and 7B of the example and areas 7A and 7B of the embodiment of the pattern forming method according to the third invention of the present application.
It will be clear that regions 7A and 7AB or regions 7AB can also be formed in a juxtaposed arrangement at the same time. Further, regions 7A and 7B of the embodiment of the pattern forming method according to the third invention of the present application, regions 7AB of the embodiment of the pattern forming method of the third invention of the present application, and the pattern forming method according to the third invention of the present application. It will be apparent that a plurality of combinations selected from the regions 7A and 7AB of the embodiment of can be formed in juxtaposed arrangement at the same time. Various other modifications and changes may be made without departing from the spirit of the present invention.

[Brief description of the drawings]

1A to 1C are schematic cross-sectional views in a sequential process for explaining the pattern forming method according to the first invention of the present application. 2A to 2C are schematic cross-sectional views in sequential steps for explaining the pattern forming method according to the second invention of the present application. 3A to 3E are schematic cross-sectional views in the sequential steps for explaining the pattern forming method according to the third invention of the present application. 1 ... Substrate 2 ... Main surface 3 ... Material plate 4 ... Supporting plate 5, 5A, 5B ... Material layer 6 ... Electron beam 7, 7A, 7B, 7AB ... Region 8 ... Laminated body

Claims (3)

(57) [Claims] 1. A material layer, which is made of a material different from that of the substrate and is patterned, is closely arranged on the main surface of the substrate, and the material layer is high over the entire area. By irradiating the substrate from the side opposite to the substrate side with an electron beam having energy, the substrate has a pattern corresponding to the material layer under the material layer and the material. A pattern forming method characterized in that a region in which a material element forming the layer is injected is formed as a target pattern. 2. A plurality of material layers, which are made of different materials from each other and are made of different materials from each other, and which are patterned, are closely arranged on the main surface of the substrate,
By irradiating the plurality of material layers toward the substrate from the side opposite to the substrate side with an electron beam having a high energy over the entire area of each of the plurality of material layers, the plurality of material layers are formed in the substrate. Under the material layer, a plurality of regions each having a pattern corresponding to the plurality of material layers and into which the respective material elements constituting the plurality of material layers are respectively injected are formed into a target pattern. A method for forming a pattern, which comprises: 3. A patterned laminate having a structure in which a plurality of material layers made of different materials from each other and made of different materials are laminated on the main surface of the substrate and patterned. In the state of being closely arranged, by irradiating the laminate with an electron beam having high energy over the entire region from the side opposite to the substrate side toward the substrate, , A region under the laminated body, which has a pattern corresponding to the laminated body and into which the respective material elements constituting the laminated body are injected from a plurality of material layers constituting the laminated body, A pattern forming method, characterized in that the pattern is formed as a pattern.