JP2669357B2 - Magnetoresistive head and method of manufacturing the same - Google Patents
Magnetoresistive head and method of manufacturing the sameInfo
- Publication number
- JP2669357B2 JP2669357B2 JP20354994A JP20354994A JP2669357B2 JP 2669357 B2 JP2669357 B2 JP 2669357B2 JP 20354994 A JP20354994 A JP 20354994A JP 20354994 A JP20354994 A JP 20354994A JP 2669357 B2 JP2669357 B2 JP 2669357B2
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- Japan
- Prior art keywords
- layer
- antiferromagnetic
- magnetoresistive
- magnetic field
- film
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気抵抗効果磁気ヘッ
ドおよびその製造方法に関し、特に強磁性磁気抵抗効果
を利用して読み出す強磁性磁気抵抗効果素子（以下、Ｍ
Ｒ素子と略す）を備える磁気抵抗効果ヘッド（以下、Ｍ
Ｒヘッドと略す）およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive magnetic head and a method of manufacturing the same, and more particularly, to a ferromagnetic magnetoresistive element (hereinafter referred to as M) which reads out by utilizing the ferromagnetic magnetoresistive effect.
A magnetoresistive head (hereinafter abbreviated as M) including an R element
R head) and its manufacturing method.
【０００２】[0002]
【従来の技術】ＭＲ素子は高い出力が得られ、出力が素
子と記録媒体との相対速度に依存しないため、小型高密
度の磁気記録装置の再生用ヘッドへの応用が期待されて
いる。しかし、ＭＲ素子を磁気記録の信号再生用ヘッド
として実用化するためには、再生印号のノイズの主因と
なり再生信号の再現性を低下させるバルクハウゼンノイ
ズを抑制する必要がある。2. Description of the Related Art An MR element can obtain a high output and its output does not depend on the relative speed between the element and a recording medium. Therefore, it is expected to be applied to a reproducing head of a small and high density magnetic recording device. However, in order to put the MR element into practical use as a signal reproducing head for magnetic recording, it is necessary to suppress Barkhausen noise, which is a main cause of noise in reproduced signals and deteriorates reproducibility of reproduced signals.
【０００３】バルクハウゼンノイズの原因は、ＭＲ素子
端部での反磁界によって生じる磁壁の不連続な移動であ
ると考えられる。このため、ＭＲ素子端部を単磁区化し
て磁壁をなくす方法が数多く提案されている。その一つ
として、特開昭６２−４０６１０号公報には、ＭＲ素子
の両端に反強磁性材料を置いて反強磁性材料の交換相互
作用によってセンス電流方向にバイアス磁界（以下縦方
向バイアス磁界と呼ぶ）を加える構造が開示されてい
る。The cause of Barkhausen noise is considered to be the discontinuous movement of the domain wall caused by the demagnetizing field at the end of the MR element. For this reason, many methods have been proposed in which the end of the MR element is made into a single magnetic domain to eliminate the domain wall. As one of them, in Japanese Patent Laid-Open No. 62-40610, an antiferromagnetic material is placed at both ends of an MR element, and a bias magnetic field (hereinafter referred to as a longitudinal bias magnetic field) in the sense current direction is generated by exchange interaction of the antiferromagnetic material. A structure for adding a call is disclosed.
【０００４】[0004]
【発明が解決しようとする課題】バルクハウゼンノイズ
を抑えるための反強磁性材料としてＭｎ合金がある。可
能なＭｎ合金の中で、ＦｅＭｎはＭＲ素子材料であるＮ
ｉＦｅ層と交換結合する能力が最も大きいと考えられ、
ＦｅＭｎをＮｉＦｅ層に直接付着する方法が提案されて
いる。しかしながら、ＦｅＭｎは、非常に酸化しやすい
物質であり、大気中に晒すことにより、バイアス磁界量
の低下が観測された。An Mn alloy is an antiferromagnetic material for suppressing Barkhausen noise. Of the possible Mn alloys, FeMn is the MR element material N
It is considered that the ability to exchange-couple with the iFe layer is the largest,
A method of directly attaching FeMn to a NiFe layer has been proposed. However, FeMn is a substance that is very easily oxidized, and a decrease in the bias magnetic field amount was observed by exposing it to the atmosphere.
【０００５】そこで、Ｃｒやその他元素をＦｅＭｎに添
加し、耐食性を向上させることを目的とした特許が、特
開昭６３−２７３３７２号公報および特開平４−２１１
１０６号公報に開示されている。このＦｅＭｎＣｒを用
いて作製した膜の交換バイアス磁界を測定したところ、
交換バイアス磁界量が“０”となる結果となった。一
方、信頼性の得られる膜となったＮｉＭｎについても交
換バイアス磁界量が“０”となる結果となった。Therefore, patents for the purpose of improving the corrosion resistance by adding Cr and other elements to FeMn are disclosed in JP-A-63-273372 and JP-A-4-211.
No. 106 is disclosed. When the exchange bias magnetic field of the film produced using this FeMnCr was measured,
The result is that the exchange bias magnetic field amount is “0”. On the other hand, with respect to NiMn which has become a reliable film, the exchange bias magnetic field amount is "0".
【０００６】本発明の目的は、上記従来技術の欠点に鑑
みなされたものであって、その原因を追求し、信頼性の
高い交換バイアス磁界量の大きいＭＲヘッドを提供する
ことにある。An object of the present invention has been made in view of the above-mentioned drawbacks of the prior art, and it is an object of the present invention to provide a reliable MR head having a large amount of exchange bias magnetic field.
【０００７】[0007]
【課題を解決するための手段】本発明の磁気抵抗効果ヘ
ッドは、強磁性磁気抵抗効果層と、この強磁性磁気抵抗
効果層に接し、交換力により縦方向バイアス磁界を生じ
させる反強磁性体層とを備える磁気抵抗効果ヘッドにお
いて、前記反強磁性体層中の酸素濃度を前記反強磁性体
層組成の１０原子％以下にしたことを特徴とする。さら
に、前記反強磁性体層と前記強磁性磁気抵抗効果層との
界面における酸素濃度を前記反強磁性体層組成の１０原
子％以下にしたことを特徴とする。また、前記酸素濃度
が、炭素濃度であってもよい。A magnetoresistive head according to the present invention comprises a ferromagnetic magnetoresistive layer and an antiferromagnetic material which is in contact with the ferromagnetic magnetoresistive layer and generates a longitudinal bias magnetic field by an exchange force. Wherein the oxygen concentration in the antiferromagnetic layer is set to 10 atomic% or less of the composition of the antiferromagnetic layer. Furthermore, the oxygen concentration at the interface between the antiferromagnetic layer and the ferromagnetic magnetoresistive layer is set to 10 atomic% or less of the composition of the antiferromagnetic layer. Further, the oxygen concentration may be a carbon concentration.
【０００８】次に、本発明の磁気抵抗効果ヘッドの製造
方法は、反強磁性体層を成膜するためのＭｎ合金ター
ゲットを窒素中で熱処理し、表面に酸素を析出させる工
程、Ｍｎ合金ターゲットの表面に析出した酸素をエッ
チング法により除去する工程、酸素を除去した低酸素
濃度のＭｎ合金ターゲットを用い、蒸着法もしくはスパ
ッタリング法により反強磁性体層を成膜する工程、とを
含んでいる。Next, according to the method of manufacturing the magnetoresistive head of the present invention, the Mn alloy target for forming the antiferromagnetic material layer is heat-treated in nitrogen to precipitate oxygen on the surface, and the Mn alloy target is formed. And a step of forming an antiferromagnetic material layer by a vapor deposition method or a sputtering method using a low oxygen concentration Mn alloy target from which oxygen has been removed. .
【０００９】[0009]
【作用】反強磁性体であるＦｅＭｎＣｒ膜およびＮｉＭ
ｎ膜を、ガラス基板上に形成したＮｉＦｅ膜上にそれぞ
れ積層し、バイアス磁界の大きさ（交換バイアス量）に
ついて調べた。それによると、ＦｅＭｎＣｒ膜を形成し
た場合、バイアス磁界が“０”となった試料があった。
この試料のオージェ分析による成分分析の結果を図３に
示す。図３は、横軸に試料の表面層の深さを表すものと
して測定の際のスパッタ時間で示し、縦軸にはその組成
を比で示した。これによると、ＦｅＭｎＣｒ膜の中には
Ｃが多く存在していることがわかる。[Function] An antiferromagnetic FeMnCr film and NiM
The n film was laminated on each of the NiFe films formed on the glass substrate, and the magnitude of the bias magnetic field (exchange bias amount) was examined. According to this, there was a sample in which the bias magnetic field became "0" when the FeMnCr film was formed.
The result of the component analysis of this sample by Auger analysis is shown in FIG. In FIG. 3, the abscissa indicates the depth of the surface layer of the sample and indicates the sputtering time at the time of measurement, and the ordinate indicates the composition of the sample by the ratio. According to this, it can be seen that a large amount of C is present in the FeMnCr film.
【００１０】一方、ＦｅＭｎ膜を形成した場合、バイア
ス磁界の大きさが２５（Ｏｅ：エルステッド）となり、
図４に示すように、膜中にはＣ（炭素）がほとんど含ま
れていないことがわかる。すなわち、ＦｅＭｎＣｒ膜を
形成した試料でバイアス磁界が“０”となったのは、こ
の膜中のＣの影響であると考えられる。On the other hand, when the FeMn film is formed, the magnitude of the bias magnetic field becomes 25 (Oe: Oersted),
As shown in FIG. 4, it can be seen that the film contains almost no C (carbon). That is, it is considered that the fact that the bias magnetic field became "0" in the sample having the FeMnCr film formed was due to the influence of C in this film.
【００１１】さらに、ＮｉＭｎ膜を形成した試料では、
バイアス磁界の大きさが１０（Ｏｅ）となった。この試
料を同様にオージェ分析により調べた結果を図５に示
す。これによると、ＮｉＭｎ膜中には酸素が多く存在し
ていることがわかった。このようにＮｉＦｅ膜との界面
に存在する酸素（Ｏ）のみではなく、膜中の酸素もバイ
アス磁界の大きさに関与しており、酸素濃度が高いとバ
イアス磁界は小さくなることがわかった。ここで、反強
磁性膜中の酸素濃度（原子％）とバイアス磁界の大きさ
（交換バイアス量）との関係を図６に示す。これによる
と、バイアス磁界を大きくするには、反強磁性膜中の酸
素，Ｃの濃度を１０原子％以下に抑える必要がある。な
お、図に示す反強磁性膜の組成に存在するＴａは、磁気
的分離層もしくは結晶性の向上をはかるための層に用い
たものである。Further, in the sample having the NiMn film formed,
The magnitude of the bias magnetic field became 10 (Oe). The result of examining this sample by Auger analysis is shown in FIG. According to this, it was found that a large amount of oxygen was present in the NiMn film. Thus, it was found that not only oxygen (O) existing at the interface with the NiFe film but also oxygen in the film contributes to the magnitude of the bias magnetic field, and the bias magnetic field becomes smaller when the oxygen concentration is high. Here, FIG. 6 shows the relationship between the oxygen concentration (atomic%) in the antiferromagnetic film and the magnitude of the bias magnetic field (exchange bias amount). According to this, in order to increase the bias magnetic field, it is necessary to suppress the concentration of oxygen and C in the antiferromagnetic film to 10 atomic% or less. Note that Ta existing in the composition of the antiferromagnetic film shown in the figure is used in the magnetic separation layer or the layer for improving the crystallinity.
【００１２】[0012]
【実施例】次に、本発明について図面を参照して説明す
る。 （実施例１）図１は、本発明の一実施例を示す構成図で
あって、複合ヘッドを構成するＭＲヘッド部の構成を示
している。本実施例は、図１に示すように、まず、アル
ティック（ＡｌＴｉＣ：アルミナ・チタン・カーバイ
ド）基板１０上にＮｉＦｅからなる下シールド１１、ギ
ャップ層１２、ＣｏＺｒＭｏ等からなる隣接バイアス材
１３を順次積層し、この上にＮｉＦｅからなるＭＲ膜１
４を形成し、さらに、この上に縦方向バイアス磁界を生
じさせるためのＦｅＭｎＣｒからなる反強磁性膜１５を
形成する。そして、Ａｕ等からなるリード電極１６を設
け、所定膜厚のアルミナ（Ａｌ2 Ｏ3 ）等からなるギャ
ップ層１７を形成する。その後、ＮｉＦｅからなる上シ
ールド１８、アルミナからなるギャップ層１９を積層
し、最後に、ＮｉＦｅからなる書き込みポール２０を形
成する。Next, the present invention will be described with reference to the drawings. (Embodiment 1) FIG. 1 is a constitutional view showing an embodiment of the present invention, showing the constitution of an MR head portion constituting a composite head. In this embodiment, as shown in FIG. 1, first, a lower shield 11 made of NiFe, a gap layer 12, and an adjacent bias material 13 made of CoZrMo or the like are sequentially formed on an AlTiC (AlTiC: alumina / titanium carbide) substrate 10. An MR film 1 made of NiFe laminated on top of this
4 is formed, and an antiferromagnetic film 15 made of FeMnCr for generating a longitudinal bias magnetic field is further formed thereon. Then, the lead electrode 16 made of Au or the like is provided, and the gap layer 17 made of alumina (Al 2 O 3 ) or the like having a predetermined thickness is formed. Thereafter, an upper shield 18 made of NiFe and a gap layer 19 made of alumina are laminated, and finally, a write pole 20 made of NiFe is formed.
【００１３】ここで、第２の実施例で用いた反強磁性膜
の評価のために、ガラス基板上にＮｉＦｅ／ＦｅＭｎＣ
ｒと順次形成した試料について、バイアス磁界の大きさ
を測定した。その結果、バイアス磁界は２０（Ｏｅ）で
あり、十分に大きな値が得られた。また、このときの膜
のＣ濃度は、図２のオージェ分析結果に示すように、十
分に小さいことがわかった。 （実施例２）次に、本発明の第２の実施例によるＭＲヘ
ッドについて説明する。本実施例は、実施例１におい
て、図１に示す反強磁性膜１５のＦｅＭｎＣｒに代えて
ＮｉＭｎを用いたものであって、それ以外は同様の構成
である。従って、構成の説明は重複を避けるために省略
する。Here, in order to evaluate the antiferromagnetic film used in the second embodiment, NiFe / FeMnC was formed on a glass substrate.
The magnitude of the bias magnetic field was measured for the samples sequentially formed with r. As a result, the bias magnetic field was 20 (Oe), and a sufficiently large value was obtained. Further, it was found that the C concentration of the film at this time was sufficiently small as shown in the Auger analysis result of FIG. (Embodiment 2) Next, an MR head according to a second embodiment of the present invention will be described. The present embodiment is the same as the first embodiment except that NiMn is used in place of FeMnCr of the antiferromagnetic film 15 shown in FIG. Therefore, the description of the configuration is omitted to avoid duplication.
【００１４】ここで、第２の実施例で用いた反強磁性膜
の評価のために、ガラス基板上にＮｉＦｅ／ＮｉＭｎと
順次形成した試料について、バイアス磁界の大きさを測
定した。その結果、バイアス磁界は２０（Ｏｅ）であ
り、十分に大きな値が得られた。また、このときの膜の
酸素濃度は十分に小さいことがわかった。 （実施例３）次に、本発明の第３の実施例によるＭＲヘ
ッドについて説明する。本実施例の構成は、実施例２の
場合と同様であるが、反強磁性膜１５の形成する際に用
いたＮｉＭｎターゲットに処理を加えたものであって、
それ以外は同様の構成であり、構成に関する説明は重複
を避けるために省略するが、このＮｉＭｎターゲットに
処理は、、まず、反強磁性膜１５のＮｉＭｎを成膜する
ためのＮｉＭｎターゲットを、３００℃で窒素中に２０
時間の熱処理を行った後、ＮｉＭｎターゲットの表面に
析出した酸素をエッチング法にて除去する。そして、酸
素を除去した低酸素濃度ＮｉＭｎターゲットを用いてス
パッタ法により反強磁性膜１５を形成する。Here, in order to evaluate the antiferromagnetic film used in the second embodiment, the magnitude of the bias magnetic field was measured for the samples in which NiFe / NiMn were sequentially formed on the glass substrate. As a result, the bias magnetic field was 20 (Oe), and a sufficiently large value was obtained. It was also found that the oxygen concentration of the film at this time was sufficiently low. Embodiment 3 Next, an MR head according to a third embodiment of the present invention will be described. The configuration of the present embodiment is the same as that of the second embodiment, except that the NiMn target used when forming the antiferromagnetic film 15 is processed,
Other than that, the configuration is the same, and a description of the configuration is omitted to avoid duplication, but the treatment of this NiMn target is performed by first using a NiMn target for forming the NiMn of the antiferromagnetic film 15 as 300 nm. 20 in nitrogen at ℃
After heat treatment for a time, oxygen deposited on the surface of the NiMn target is removed by an etching method. Then, the antiferromagnetic film 15 is formed by the sputtering method using a low oxygen concentration NiMn target from which oxygen is removed.
【００１５】ここで、第３の実施例で用いた反強磁性膜
の評価のために、ガラス基板上にＮｉＦｅ／ＮｉＭｎ
（低酸素濃度ターゲットで成膜）と順次形成した試料に
ついて、バイアス磁界の大きさを測定した。その結果、
バイアス磁界は２５（Ｏｅ）以上であり、十分に大きな
値が得られた。また、このときの膜の酸素濃度は十分に
小さいことがわかった。Here, in order to evaluate the antiferromagnetic film used in the third embodiment, NiFe / NiMn was formed on a glass substrate.
The magnitude of the bias magnetic field was measured for samples sequentially formed (deposition with a low oxygen concentration target). as a result,
The bias magnetic field was 25 (Oe) or more, and a sufficiently large value was obtained. It was also found that the oxygen concentration of the film at this time was sufficiently low.
【００１６】なお、第３の実施例では、反強磁性膜とし
てＮｉＭｎを用いたが、ＦｅＭｎＣｒについても前述の
処理（熱処理と表面に析出した酸素の除去）を行うこと
により、同様の結果が得られる。In the third embodiment, NiMn was used as the antiferromagnetic film, but FeMnCr was also subjected to the above-mentioned treatment (heat treatment and removal of oxygen deposited on the surface) to obtain similar results. To be
【００１７】[0017]
【発明の効果】以上説明したように、本発明の磁気抵抗
効果ヘッドは、信頼性が高く、交換バイアス磁界量も十
分に大きいＭＲヘッドが得られるという効果がある。As described above, the magnetoresistive head of the present invention has an effect that an MR head having high reliability and a sufficiently large exchange bias magnetic field can be obtained.
【図１】本発明の一実施例を示す構成図である。FIG. 1 is a configuration diagram showing one embodiment of the present invention.
【図２】反強磁性体層の組成を説明するための図であ
る。FIG. 2 is a diagram for explaining the composition of an antiferromagnetic layer.
【図３】反強磁性体層の組成を説明するための図であ
る。FIG. 3 is a diagram for explaining the composition of an antiferromagnetic layer.
【図４】反強磁性体層の組成を説明するための図であ
る。FIG. 4 is a diagram for explaining the composition of an antiferromagnetic layer.
【図５】反強磁性体層の組成を説明するための図であ
る。FIG. 5 is a diagram for explaining the composition of an antiferromagnetic layer.
【図６】反強磁性体層の酸素濃度と交換バイアス量との
関係を示す図である。FIG. 6 is a diagram showing the relationship between the oxygen concentration in the antiferromagnetic material layer and the exchange bias amount.
１０ アルティック基板（ＡｌＴｉＣ基板） １１ 下シールド １３ 隣接バイアス材 １４ ＭＲ膜（磁気抵抗効果膜） １５ 反強磁性膜 １６ リード電極 １２，１７，１９ ギャップ層 ２０ 書き込みポール Reference Signs List 10 Altic substrate (AlTiC substrate) 11 Lower shield 13 Adjacent bias material 14 MR film (Magnetoresistance effect film) 15 Antiferromagnetic film 16 Lead electrode 12, 17, 19 Gap layer 20 Write pole
Claims (4)
気抵抗効果層に接し、交換力により縦方向バイアス磁界
を生じさせる反強磁性体層とを備える磁気抵抗効果ヘッ
ドにおいて、前記反強磁性体層中の酸素濃度を前記反強
磁性体層組成の１０原子％以下にしたことを特徴とする
磁気抵抗効果ヘッド。1. A magnetoresistive head comprising: a ferromagnetic magnetoresistive layer; and an antiferromagnetic layer that is in contact with the ferromagnetic magnetoresistive layer and generates a longitudinal bias magnetic field by an exchange force. A magnetoresistive head, wherein the oxygen concentration in the magnetic layer is 10 atomic% or less of the composition of the antiferromagnetic layer.
気抵抗効果層に接し、交換力により縦方向バイアス磁界
を生じさせる反強磁性体層とを備える磁気抵抗効果ヘッ
ドにおいて、前記反強磁性体層と前記強磁性磁気抵抗効
果層との界面における酸素濃度を前記反強磁性体層組成
の１０原子％以下にしたことを特徴とする磁気抵抗効果
ヘッド。2. A magnetoresistive head comprising: a ferromagnetic magnetoresistive layer; and an antiferromagnetic layer that is in contact with the ferromagnetic magnetoresistive layer and generates a longitudinal bias magnetic field by an exchange force. A magnetoresistive head, wherein the oxygen concentration at the interface between the magnetic layer and the ferromagnetic magnetoresistive layer is 10 atomic% or less of the composition of the antiferromagnetic layer.
特徴とする請求項１または２記載の磁気抵抗効果ヘッ
ド。3. The magnetoresistive head according to claim 1, wherein the oxygen concentration is a carbon concentration.
抗効果ヘッドの製造方法。 （イ）反強磁性体層を成膜するためのＭｎ合金ターゲッ
トを窒素中で熱処理し、表面に酸素を析出させる工程 （ロ）Ｍｎ合金ターゲットの表面に析出した酸素をエッ
チング法により除去する工程 （ハ）酸素を除去した低酸素濃度のＭｎ合金ターゲット
を用い、蒸着法もしくはスパッタリング法により反強磁
性体層を成膜する工程4. A method for manufacturing a magneto-resistance effect head, comprising the following steps. (A) A step of heat-treating an Mn alloy target for forming an antiferromagnetic material layer in nitrogen to deposit oxygen on the surface. (B) A step of removing oxygen deposited on the surface of the Mn alloy target by an etching method. (C) A step of forming an antiferromagnetic material layer by a vapor deposition method or a sputtering method using a low oxygen concentration Mn alloy target from which oxygen has been removed
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20354994A JP2669357B2 (en) | 1994-08-29 | 1994-08-29 | Magnetoresistive head and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20354994A JP2669357B2 (en) | 1994-08-29 | 1994-08-29 | Magnetoresistive head and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0863715A JPH0863715A (en) | 1996-03-08 |
| JP2669357B2 true JP2669357B2 (en) | 1997-10-27 |
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ID=16475983
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20354994A Expired - Fee Related JP2669357B2 (en) | 1994-08-29 | 1994-08-29 | Magnetoresistive head and method of manufacturing the same |
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| Country | Link |
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| JP (1) | JP2669357B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3225496B2 (en) * | 1997-06-05 | 2001-11-05 | ティーディーケイ株式会社 | Magnetoresistive film and magnetoresistive head |
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- 1994-08-29 JP JP20354994A patent/JP2669357B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0863715A (en) | 1996-03-08 |
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