JP2669146B2 - Fuse for semiconductor element protection - Google Patents

Fuse for semiconductor element protection

Info

Publication number
JP2669146B2
JP2669146B2 JP32214990A JP32214990A JP2669146B2 JP 2669146 B2 JP2669146 B2 JP 2669146B2 JP 32214990 A JP32214990 A JP 32214990A JP 32214990 A JP32214990 A JP 32214990A JP 2669146 B2 JP2669146 B2 JP 2669146B2
Authority
JP
Japan
Prior art keywords
electrode
semiconductor element
fuse
electrodes
porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP32214990A
Other languages
Japanese (ja)
Other versions
JPH04215225A (en
Inventor
煕 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP32214990A priority Critical patent/JP2669146B2/en
Publication of JPH04215225A publication Critical patent/JPH04215225A/en
Application granted granted Critical
Publication of JP2669146B2 publication Critical patent/JP2669146B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Fuses (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体素子、特に、大容量の平型半導体素子
の保護に用いられる半導体素子の保護用ヒューズに関す
る。
Description: TECHNICAL FIELD The present invention relates to a semiconductor element, and more particularly to a fuse for protecting a semiconductor element used for protecting a large-capacity flat semiconductor element.

〔従来の技術〕[Conventional technology]

第5図は電流容量1,000A程度以上の大容量の平型半導
体素子の保護に用いられる従来の半導体素子の保護用ヒ
ューズ26の縦断面図、第6図は同正面図を示す。碍管1
の一方の端面には電極2が設けられ、他方の端面には電
極3が設けられている。電極2は碍管1の内径より小さ
い径の部材で、内面に凸部、例えば、四角形の凸部2Aが
設けられている。電極3は碍管1の外周とほぼ同一の外
周形状の部材からなり、内面に前記電極2の凸部2Aと同
一形状の凸部3Aが設けられている。電極2の凸部2Aの側
面と電極板3の凸部3Aの側面との間に可溶体4が溶接な
どの方法で接合される。同図では凸部2A,3Aは四角形で
あり、それぞれの側面に合計4個の可溶体が接合されて
いる。可溶体4は溶断特性を向上するため、多数の小孔
が設けられていることが多い。
FIG. 5 is a vertical sectional view of a conventional fuse 26 for protecting a semiconductor element used for protecting a large-capacity flat semiconductor element having a current capacity of about 1,000 A or more, and FIG. 6 is a front view thereof. Insulator 1
The electrode 2 is provided on one end face of the substrate, and the electrode 3 is provided on the other end face. The electrode 2 is a member having a diameter smaller than the inner diameter of the porcelain bushing 1, and has a convex portion, for example, a rectangular convex portion 2A, provided on the inner surface thereof. The electrode 3 is made of a member having an outer peripheral shape substantially the same as the outer periphery of the porcelain bushing 1, and a convex portion 3A having the same shape as the convex portion 2A of the electrode 2 is provided on the inner surface. The fusible member 4 is joined between the side surface of the projection 2A of the electrode 2 and the side surface of the projection 3A of the electrode plate 3 by a method such as welding. In the figure, the convex portions 2A and 3A are square, and a total of four fusible members are joined to each side surface. The fusible body 4 is often provided with a large number of small holes in order to improve the fusing property.

このようなヒューズ26を組み立てるには、先ず電極2,
3および可溶体4の結合体を電極2を先にして碍管1の
他方の端面より挿入し、電極3を碍管1の他方の端面に
ねじ12により固定する。次に、碍管1の一方の端面より
消弧用材、例えば、消弧砂5を前記可溶体4を埋め込む
ように封入する。その後、覆い板6をねじ13により電極
2に固定し、更に、覆い板6をねじ12により碍管1の一
方の端面に固定する。なお、7および8は消弧すな5の
漏れを防止するパッキンであり、11は溶断表示器11Aの
表示接点取り付け台である。
To assemble such a fuse 26, first, the electrodes 2,
The combined body of 3 and the fusible member 4 is inserted from the other end face of the insulator tube 1 with the electrode 2 first, and the electrode 3 is fixed to the other end face of the insulator tube 1 with screws 12. Next, an arc extinguishing material, for example, arc extinguishing sand 5, is enclosed from the one end surface of the porcelain tube 1 so as to embed the fusible body 4. After that, the cover plate 6 is fixed to the electrode 2 with the screw 13, and the cover plate 6 is further fixed to one end surface of the porcelain tube 1 with the screw 12. Numerals 7 and 8 are packings for preventing leakage of the arc extinguishing 5, and numeral 11 is a display contact mount of the fusing indicator 11A.

第7図はこの保護用ヒューズ26と平型半導体素子21の
接続を示す。平型半導体素子21とその両端面に設けられ
た接続導体22および23とが押え板24およびねじ25からな
る加圧機構により加圧接触されて接続される。一方の接
続導体23は保護用ヒューズ26の一方の電極2に、この電
極2の中央部に設けられたねじ孔2Bを用いてねじ27で接
続される。保護用ヒューズ26の他方の電極3に、この電
極3の中央部に設けられたねじ孔3Bを用いて接続導体29
がねじ28を用いて接続される。
FIG. 7 shows the connection between the protective fuse 26 and the flat semiconductor element 21. The flat semiconductor element 21 and the connection conductors 22 and 23 provided on both end surfaces thereof are pressed and contacted by a pressing mechanism composed of a holding plate 24 and a screw 25 to be connected. One connecting conductor 23 is connected to one electrode 2 of the protective fuse 26 with a screw 27 by using a screw hole 2B provided in the central portion of this electrode 2. A connection conductor 29 is formed on the other electrode 3 of the protective fuse 26 by using a screw hole 3B provided at the center of the electrode 3.
Are connected using screws 28.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

前述の保護用ヒューズにおいては平型半導体素子と保
護用ヒューズとの間の接続導体23は平型半導体素子の通
電電流を許容する断面積が必要であり、平型半導体素子
の大容量化とともにこの接続導体が非常に多きなスペー
スを占めるようになっている。このことは、特に、半導
体素子の使用個数の多い大容量の半導体変換装置で重大
な問題となっている。このため第8図のように平型半導
体素子21の電極と保護用ヒューズの電極を対向して配置
し、押え板24およびねじ25からなる加圧機構により加圧
接触で接続し、接続導体23を取り除くことが考えられる
が、この場合、加圧力は電流容量1,000A程度の平型半導
体素子で4,000〜5,000kgが必要で前述の保護用ヒューズ
においては、覆い板6あるいは電極3の周辺部が加圧力
により曲げられ破損してしまう。
In the above-described protective fuse, the connection conductor 23 between the flat semiconductor element and the protective fuse needs to have a cross-sectional area that allows a current flowing through the flat semiconductor element. The connecting conductors occupy a very large space. This is a serious problem particularly in a large-capacity semiconductor converter using a large number of semiconductor elements. Therefore, as shown in FIG. 8, the electrodes of the flat semiconductor element 21 and the electrodes of the protective fuse are arranged so as to face each other, and are connected by pressure contact by a pressure mechanism composed of a holding plate 24 and a screw 25. However, in this case, the pressing force is required to be 4,000 to 5,000 kg for a flat semiconductor element having a current capacity of about 1,000 A. In the above-mentioned protective fuse, the cover plate 6 or the peripheral portion of the electrode 3 is It will be bent and damaged by the applied pressure.

本発明の課題は電極に加えられる大きな加圧力に耐え
る半導体素子の保護用ヒューズを提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a protective fuse for a semiconductor device that can withstand a large pressing force applied to an electrode.

〔課題を解決するための手段〕[Means for solving the problem]

前述の課題を解決するために、本発明の半導体素子の
保護用ヒューズにおいては、碍管と、この碍管の両端面
にそれぞれ設けられた電極と、これら電極間に接合され
た可溶体と、前記碍管と前記それぞれの電極で形成され
る空間内に前記可溶体を埋め込むように封入された消弧
用材とからなり、前記電極のいずれか一方の電極が半導
体素子の一方電極と対向して配置され加圧接触により接
続される半導体素子の保護用ヒューズにおいて、電極は
碍管の外周とほぼ同一の外周形状の周辺部を持ち、この
周辺部が最も高くなるように形成されているようにす
る。また、それぞれの電極は中央部に内孔が設けられ、
これら内孔の側面間に可溶体が接合されるようにする。
更にまた、碍管の外周形状が角形をなすようにする。
In order to solve the above-mentioned problems, in a fuse for protecting a semiconductor element of the present invention, a porcelain bushing, electrodes provided on both end surfaces of the porcelain bushing, a fusible body joined between these electrodes, and the porcelain bushing And an arc-extinguishing material sealed so as to embed the fusible material in the space formed by the respective electrodes, and one of the electrodes is disposed so as to face one electrode of the semiconductor element. In a fuse for protecting a semiconductor element connected by pressure contact, an electrode has a peripheral portion having an outer peripheral shape substantially the same as the outer peripheral surface of a porcelain tube, and the peripheral portion is formed to be the highest. Also, each electrode has an inner hole at the center,
A fusible body is bonded between the side surfaces of these inner holes.
Furthermore, the outer peripheral shape of the porcelain bushing is square.

〔作用〕[Action]

本発明の半導体素子の保護用ヒューズにおいては、電
極は碍管の外周とほぼ同一の外周形状で、かつ、碍管端
面に固定した際周辺部が最も高くなるよう形成されてい
るので電極に加えられる加圧力は電極に曲げ応力を与え
ることなく碍管端面に加えられる。従って、電極部分が
破損することはなくなる。また、これら電極は中央部に
内孔が設けられており、碍管の両端面にこれらの電極を
固定した後、内孔の側面に内部より可溶体を接合するよ
うにしたので前述の碍管の外周とほぼ同一の外周形状の
本発明における電極に可溶体の接合が可能になる。更に
また、碍管の外周形状を角形としたので、角部の電極固
定用ねじ部を除き、碍管の贅肉を除去でき、碍管および
電極の大きさを小さくすることができ、コストを下げる
ことができる。
In the fuse for protecting a semiconductor element according to the present invention, the electrode has substantially the same outer peripheral shape as the outer periphery of the porcelain bushing and is formed so that the peripheral portion becomes highest when fixed to the end face of the porcelain bushing. Pressure is applied to the end face of the insulator tube without applying bending stress to the electrode. Therefore, the electrode portion is not damaged. In addition, these electrodes have an inner hole in the center, and after fixing these electrodes to both end surfaces of the porcelain tube, the fusible body was joined to the side surface of the inner hole from the inside. A fusible body can be joined to the electrode of the present invention having substantially the same outer peripheral shape as that of the embodiment. Furthermore, since the outer peripheral shape of the porcelain insulator is square, it is possible to remove the flesh of the porcelain insulator, excluding the electrode fixing screw portions at the corners, and to reduce the size of the porcelain insulator and the electrode, thus reducing the cost. .

〔実施例〕〔Example〕

第1図は本発明の一実施例における半導体素子の保護
用ヒューズ30の縦断面図、第2図は同正面図を示す。碍
管1の一方の端面には電極2が設けられ、他方の端面に
は電極3が設けられる。これら電極2および電極3はそ
れぞれ碍管1の外周とほぼ同一の外周形状の部材からな
る。中央部に内孔、例えば、四角形の内孔2Cあるいは3C
が設けられる。これら電極2および電極3は、まず、ね
じ12によって碍管1の一方の端面および他方の端面に固
定され、次に前記電極2および電極3のそれぞれの内孔
の側面に可溶体4を内側より溶接などの方法で接合す
る。同図では内孔2C,3Cは四角形であり、それぞれの内
孔側面に合計4個の可溶体が接合されている。次に他方
の電極3の内孔3Cにカバー3Dをねじ13により固定し、こ
の内孔を塞ぐ。次に電極2の内孔2Cから消弧用材、例え
ば、消弧砂を前記可溶体4を埋め込むよう封入した上
で、電極2の内孔2Cにカバー2Dをねじ13により固定し、
この内孔を塞ぐ。なお、7および8は消弧砂5の漏れを
防止するパッキンであり、11は表示器11Aの表示接点取
り付け台である。電極2および電極3は碍管1の端面に
固定した際に、これら電極の周辺部が最も高くなるよう
な構造となる。すなわち、カバー2C,2Dあるいはねじ12,
13は電極の周辺部によって規定される平面2Eおよび平面
3Eより突き出ないように、これらカバーあるいはねじが
取り付けられる電極中央部に窪みを設けるようにする。
FIG. 1 is a vertical sectional view of a fuse 30 for protecting a semiconductor element according to an embodiment of the present invention, and FIG. 2 is a front view of the same. An electrode 2 is provided on one end face of the insulator tube 1, and an electrode 3 is provided on the other end face. Each of the electrodes 2 and 3 is made of a member having an outer peripheral shape substantially the same as the outer periphery of the porcelain bushing 1. Inner hole in the center, for example square inner hole 2C or 3C
Is provided. The electrodes 2 and 3 are first fixed to one end surface and the other end surface of the insulator tube 1 by screws 12, and then a fusible member 4 is welded from the inside to the side surfaces of the inner holes of the electrodes 2 and 3 respectively. And the like. In the figure, the inner holes 2C and 3C are quadrangular, and a total of four fusible members are joined to the side surfaces of each inner hole. Next, the cover 3D is fixed to the inner hole 3C of the other electrode 3 with the screw 13, and the inner hole is closed. Next, an arc-extinguishing material, for example, arc-extinguishing sand, is sealed from the inner hole 2C of the electrode 2 so as to embed the fusible body 4, and then the cover 2D is fixed to the inner hole 2C of the electrode 2 with a screw 13.
This inner hole is closed. Reference numerals 7 and 8 denote packings for preventing the extinguishing sand 5 from leaking, and reference numeral 11 denotes a display contact mount for the display 11A. When the electrodes 2 and 3 are fixed to the end face of the insulator tube 1, the structure is such that the periphery of these electrodes is the highest. That is, covers 2C, 2D or screws 12,
13 is the plane 2E and the plane defined by the periphery of the electrode
A recess is provided at the center of the electrode to which these covers or screws are attached so as not to protrude from 3E.

第3図はこの保護用ヒューズ30の碍管1の横断面図で
あり、碍管の外周形状を角形とした例を示す。このよう
に角形とすることで、角部の電極固定用ねじ部を除き、
碍管の贅肉を除去して、碍管および電極の大きさを小さ
くすることができ、コストを下げることができる。
FIG. 3 is a cross-sectional view of the porcelain insulator 1 of the protective fuse 30, showing an example in which the outer peripheral shape of the porcelain insulator is rectangular. By making it square, the electrode fixing screw at the corner is removed,
By removing the extra thickness of the insulator tube, the size of the insulator tube and the electrode can be reduced, and the cost can be reduced.

第4図はこの保護用ヒューズ30と平型半導体素子21の
接続を示す。第4図は第8図と同様であるが、保護用ヒ
ューズとして本発明における保護用ヒューズ30が用いら
れている。すなわち、平型半導体素子21の一方の電極と
本発明の保護用ヒューズの一方の電極とが対向して配置
され、平型半導体素子21の他方の電極に対向して接続導
体22が配置され、保護用ヒューズ30の他方の電極に対向
して接続導体29が配置され、これらは押え板24およびね
じ25からなる加圧機構により加圧接触されて接続され
る。この場合、加圧力は電流容量1,000A程度の平型半導
体素子で4,000〜5,000kgが必要とされるが、この加圧力
は電極2あるいは電極3に曲げ応力を加えることなく、
電極周辺部から碍管1の端面に加えられるので、電極部
分が破損することはなくなる。なお、計算の結果では碍
管1は耐加圧力が10Ton以上であり、破損に対し充分安
全である。
FIG. 4 shows the connection between the protective fuse 30 and the flat semiconductor element 21. FIG. 4 is the same as FIG. 8, except that the protective fuse 30 of the present invention is used as a protective fuse. That is, one electrode of the flat semiconductor element 21 and one electrode of the protective fuse of the present invention are arranged to face each other, and the connection conductor 22 is arranged to face the other electrode of the flat semiconductor element 21; A connection conductor 29 is arranged to face the other electrode of the protection fuse 30, and these are connected under pressure by a pressure mechanism including a holding plate 24 and a screw 25. In this case, the pressing force is required to be 4,000 to 5,000 kg for a flat semiconductor element having a current capacity of about 1,000 A. This pressing force does not apply bending stress to the electrode 2 or the electrode 3,
Since it is applied to the end surface of the porcelain bushing 1 from the peripheral portion of the electrode, the electrode portion is not damaged. According to the calculation results, the insulator 1 has a pressure resistance of 10 Ton or more, and is sufficiently safe against breakage.

〔発明の効果〕〔The invention's effect〕

本発明の半導体素子の保護用ヒューズにおいては、電
極が碍管の外周とほぼ同一の外周形状の周辺部を持ち、
この周辺部が最も高くなるように形成されているので、
平型半導体素子の電極と保護用ヒューズの電極を対向し
て配置し加圧接触により接続しても、この加圧力は電極
を介し碍管が受けることになり、大きな加圧力に耐え、
従来の接続導体を廃止することが可能となり、半導体変
換装置の大きさを著しく小形化することができる。ま
た、碍管の外周断面を角形にすることにより角部の電極
固定用ねじ部を除き、碍管の贅肉を除去して碍管および
電極の大きさを小さくすることができ、コストを下げる
ことができる。
In the protective fuse for a semiconductor element of the present invention, the electrode has a peripheral portion having an outer peripheral shape substantially the same as the outer peripheral of the insulator tube,
Since this peripheral part is formed so as to be the highest,
Even if the electrodes of the flat semiconductor element and the electrodes of the protective fuse are arranged opposite to each other and connected by pressure contact, this pressure will be received by the porcelain insulator through the electrodes, withstanding large pressure,
Conventional connection conductors can be eliminated, and the size of the semiconductor conversion device can be significantly reduced. Further, by making the outer peripheral section of the porcelain bushing square, the electrode fixing screw portions at the corners can be removed, and the fleshstone of the porcelain bushing can be removed to reduce the size of the porcelain bushing and the electrodes, thus reducing the cost.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の一実施例における半導体素子の保護用
ヒューズの縦断面図、第2図は同正面図、第3図は第1
図および第2図における碍管の横断面図、第4図は平型
半導体素子と第1図および第2図に示す本発明の保護用
ヒューズとを加圧接触により接続した場合の側面図、第
5図は従来の平型半導体素子の縦断面図、第6図は同正
面図、第7図は平型半導体素子と第5図および第6図に
示す従来の保護用ヒューズとを接続した場合の側面図、
第8図は平型半導体素子と第5図および第6図に示す従
来の保護用ヒューズとを加圧接触により接続した場合を
想定した側面図である。 1:碍管、2,3:電極、2C,3C:内孔、4:可溶体、5:消弧砂、
21:平型半導体素子、24:押え板、25:ねじ、30:本発明に
おける保護用ヒューズ。
FIG. 1 is a vertical sectional view of a fuse for protecting a semiconductor element according to an embodiment of the present invention, FIG. 2 is a front view of the same, and FIG.
FIG. 4 is a cross-sectional view of the insulator tube in FIG. 2 and FIG. 4 is a side view of the case where the flat semiconductor element and the protective fuse of the present invention shown in FIG. 1 and FIG. 5 is a longitudinal sectional view of a conventional flat semiconductor device, FIG. 6 is a front view of the same, and FIG. 7 is a case where the flat semiconductor device is connected to the conventional protective fuse shown in FIGS. 5 and 6. Side view of the
FIG. 8 is a side view on the assumption that the flat semiconductor device and the conventional protective fuse shown in FIGS. 5 and 6 are connected by pressure contact. 1: Insulator pipe, 2, 3: Electrode, 2C, 3C: Inner hole, 4: Soluble, 5: Arc extinguishing sand,
21: flat semiconductor element, 24: holding plate, 25: screw, 30: protective fuse in the present invention.

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】碍管と、この碍管の両端面にそれぞれ設け
られた電極と、これら電極間に接合された可溶体と、前
記碍管と前記それぞれの電極で形成される空間内に前記
可溶体を埋め込むように封入された消弧用材とからな
り、前記電極のいずれか一方の電極が半導体素子の一方
電極と対向して配置され加圧接触により接続される半導
体素子の保護用ヒューズにおいて、 電極は碍管の外周とほぼ同一の外周形状の周辺部を持
ち、この周辺部が最も高くなるように形成されているこ
とを特徴とする半導体素子の保護用ヒューズ。
1. A porcelain insulator, electrodes provided on both end faces of the porcelain insulator, a fusible body joined between the electrodes, and the fusible body in a space formed by the porcelain insulator and the respective electrodes. In a fuse for protection of a semiconductor element, which comprises an arc extinguishing material enclosed so as to be embedded, and one of the electrodes is arranged to face one electrode of the semiconductor element and is connected by pressure contact, the electrode is A fuse for protecting a semiconductor element, which has a peripheral portion having an outer peripheral shape substantially the same as the outer periphery of the porcelain bushing, and is formed so that the peripheral portion has the highest height.
【請求項2】請求項1)記載の半導体素子の保護用ヒュ
ーズにおいて、 それぞれの電極は中央部に内孔が設けられ、これら内孔
の側面間に可溶体が接合されていることを特徴とする半
導体素子の保護用ヒューズ。
2. The protective fuse for a semiconductor device according to claim 1, wherein each electrode has an inner hole at a central portion, and a fusible material is joined between side surfaces of the inner hole. Fuse for semiconductor device protection.
【請求項3】請求項1)あるいは2)記載の半導体素子
の保護用ヒューズにおいて、 碍管の外周形状が角形をなすことを特徴とする半導体素
子の保護用ヒューズ。
3. The fuse for protecting a semiconductor element according to claim 1) or 2, wherein the outer peripheral shape of the porcelain insulator is square.
JP32214990A 1990-11-26 1990-11-26 Fuse for semiconductor element protection Expired - Lifetime JP2669146B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32214990A JP2669146B2 (en) 1990-11-26 1990-11-26 Fuse for semiconductor element protection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32214990A JP2669146B2 (en) 1990-11-26 1990-11-26 Fuse for semiconductor element protection

Publications (2)

Publication Number Publication Date
JPH04215225A JPH04215225A (en) 1992-08-06
JP2669146B2 true JP2669146B2 (en) 1997-10-27

Family

ID=18140481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32214990A Expired - Lifetime JP2669146B2 (en) 1990-11-26 1990-11-26 Fuse for semiconductor element protection

Country Status (1)

Country Link
JP (1) JP2669146B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2353596A1 (en) 2010-02-02 2011-08-10 SIGMA-TAU Industrie Farmaceutiche Riunite S.p.A. Combination composition, comprising as active ingredients L-carnitine or propionyl L-carnitine, for the prevention or treatment of chronic venous insufficiency
US8665056B2 (en) * 2010-05-18 2014-03-04 Littlefuse, Inc. Fuse assembly

Also Published As

Publication number Publication date
JPH04215225A (en) 1992-08-06

Similar Documents

Publication Publication Date Title
US6696199B2 (en) Battery
US6387566B1 (en) Battery with laminated insulator/metal/insulator case
JP2717076B2 (en) Surface mount microminiature current fuse
JP2669146B2 (en) Fuse for semiconductor element protection
JPH01228138A (en) Sheathing structure of two-terminal semiconductor element
JPS5915445Y2 (en) Abnormal voltage absorption device
JP4288538B2 (en) Cylindrical battery
JPS5811852U (en) Arc extinguishing device for circuit breakers and breakers
JPS63132461A (en) Semiconductor device
PT99324A (en) DOWNLOADER OF OVERHEADS
JPH043480Y2 (en)
JPS6050340B2 (en) semiconductor element
JP3493267B2 (en) Barrel type semiconductor device
JPH09130943A (en) Electrical box
JPS5943736Y2 (en) semiconductor equipment
JPH0473835A (en) Thermal fuse and manufacture thereof
JP2592634Y2 (en) High-voltage variable resistor
JPH02220452A (en) Semiconductor device
JPH01286305A (en) Case for capacitor
JPS61174512A (en) Liquid-crystal display element
JPH03209427A (en) Film-like liquid crystal display element
JPS63254686A (en) Conductor module
JPS58178939A (en) Fuse
JPS59200441A (en) Semiconductor element
JPS63190511A (en) Insulating spacer of gas insulated switchgear