JP2662344B2 - Thick film fine pattern forming method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a fine pattern of a thick film on a glass substrate.

[0002]

2. Description of the Related Art Conventionally, a screen printing method has been widely known for forming a thick film pattern.

However, when the screen printing method is used,
It is difficult to form a thick-film fine pattern having a pattern width of 80 μm or less. Further, when the aperture ratio of the screen mesh is increased and the mesh wire diameter is reduced in order to form a fine pattern, the life of the screen is shortened.
The cost rises.

Accordingly, as an alternative to the screen printing method, a sand blast method capable of forming a fine pattern with a thick film has been proposed.

Hereinafter, a conventional example in which a thick-film fine pattern is formed directly on a glass substrate by using a sand blast method will be described.

First, a silver paste (# 590, manufactured by Electro Science Labolatories) is formed on a glass substrate 10 as a thick film.
(Product number)) A film 12 is formed (FIG. 4A). Thereafter, the silver paste film 12 is heated and dried at 150 ° C. for 30 minutes. Next, an anti-sandblast resist layer 14 is formed on the silver paste film 12 (FIG. 4B).
Thereafter, the anti-sandblast resist layer 14 is exposed with a desired pattern, developed, washed with pure water, and then the structure obtained after the washing is removed.
After drying at 10 ° C. for 10 minutes, a resist pattern 16 remains (FIG. 4C).

In order to enhance the adhesion of the resist pattern 16 on the silver paste film 12, the structure shown in FIG. 4C is heat-treated at 150 ° C. for 30 minutes. Next, the unnecessary portion of the silver paste film 12 is cut by sandblasting using the resist pattern 16 as a mask, and a thick film fine pattern 18 is formed by the remaining silver paste film portion ( FIG. 4D). Then, remove the solution from room temperature to 40
C. for 3 to 10 minutes to remove the resist pattern. After the structure was washed with water after removing the resist pattern, the structure was removed at a temperature of 120 to 130 ° C to remove water at 580 ° C.
To form a thick-film fine pattern 18 in a state of being in direct contact with the surface of the glass substrate 10 (FIG. 4E).

[0008]

However, the steps of the above-mentioned conventional method for forming a thick film pattern include two wet processes. The first is a development process in the formation of a resist pattern, and the second is a stripping and removing process of the resist pattern. During this wet processing,
Since the thick film is porous, the processing liquid permeates between the glass substrate and the thick film pattern. Therefore, when forming a thick-film fine pattern in a state of being in direct contact with a glass substrate,
For example, in the case where a fine and complicated wiring pattern is formed on a glass substrate, the adhesion of the thick film and the thick-film fine pattern to the glass substrate is reduced during wet processing. As a result, the thick film and the thick film fine pattern are easily peeled off from the glass substrate.

Accordingly, an object of the present invention is to form a thick-film fine pattern on a glass substrate by using a sand blast method. An object of the present invention is to provide a method for forming a thick-film fine pattern without fear of peeling.

[0010]

According to the present invention, there is provided a method for forming a fine pattern of a thick film, which has the following process characteristics.

In forming a thick-film fine pattern on a glass substrate by using a sand blast method, (a) a cellulose or acrylic resin layer is formed on a glass substrate.

(B) A thick film is formed on the resin layer.

(C) A resist pattern is formed on the thick film.

(D) A thick film fine pattern is formed by wet blasting by a sand blast method.

(E) After forming the fine pattern of thick film, the resist pattern is removed.

(F) After removing the resist pattern, the glass substrate on which the thick film fine pattern is formed is baked to decompose the resin layer, and the thick film fine pattern is fixed to the glass substrate.

[0017]

According to the method for forming a thick film fine pattern of the present invention, a resin layer is provided between a glass substrate and a thick film. Since this resin layer acts as a fixing agent, the adhesion between the glass substrate and the thick film can be enhanced, and peeling of the thick film and the fine pattern of the fine film due to the wet treatment can be prevented.
In addition, since the resin layer is decomposed and the thick fine pattern is fixed to the glass substrate after the completion of the wet processing, the thick fine pattern can be provided directly on the glass substrate.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the method for forming a thick film fine pattern according to the present invention will be described below with reference to the drawings.
It should be noted that the drawings referred to below merely schematically show the size, shape, and arrangement of each component so that the present invention can be understood. Further, the embodiments described below are merely preferred examples, and therefore, the present invention is not limited only to this embodiment.

First, referring to FIGS. 1A to 1C,
A basic embodiment of the present invention will be described. (A) of FIG.
(C) to (C) are process diagrams for explaining the method for forming a thick film fine pattern according to the present invention, and each diagram schematically shows a cross-sectional view of a structure obtained in a main process.

First, a cellulose or acrylic resin layer is formed on a glass substrate, a thick film is formed on the resin layer, and a resist pattern is formed on the thick film (FIG. 1). (A)).

Next, a thick film fine pattern is formed by a wet blasting process by a sand blast method (FIG. 1B).

After forming the thick-film fine pattern, the resist pattern is removed, and thereafter, the glass substrate on which the thick-film pattern is formed is baked to decompose the resin layer to obtain a thick-film fine pattern. Is fixed to a glass substrate (FIG. 1C).

Next, a more specific embodiment of the present invention will be described.

FIG. 2 is a process chart showing one embodiment of a method for forming a fine pattern of a thick film on a glass substrate according to the present invention.

First, an acrylic resin paste (manufactured by Tokyo Ohka) having a resin dissolved in an organic solvent is placed on a glass substrate 50.
Printing is performed by the screen printing method. The resin paste is dried at 135 ° C. for 10 minutes to form a resin layer 52 on the glass substrate 50 (FIG. 2A).

Next, silver paste (# 590 (trade number), manufactured by Electroscience Laboratories) is printed as a thick film paste on the resin layer 52 by a screen printing method. The silver paste is dried at 135 ° C. for 10 minutes to form a thick film 54 on the resin layer 52.
(B)).

Next, an anti-sandblast resist, ORDYL BF-200, manufactured by Tokyo Ohka Co., Ltd.
A resist layer 56 using (trade name) is formed (FIG. 1C).

After exposing the photoresist layer 56, it is developed with a 0.2% aqueous sodium carbonate solution. In this case, the exposure is such that a resist pattern having the same pattern as the fine pattern of the thick film formed in the subsequent step can be formed.

Next, the exposed resist layer 56 is washed with pure water and dried at 120 ° C. for 10 minutes. As a result, the thick film 5
A resist pattern 58 having a fine width is formed on the substrate 4 (FIG. 2).
(D)). Thereafter, a heat treatment is performed at 150 ° C. for 30 minutes in order to increase the adhesion between the resist pattern 58 and the thick film 54.

Next, using the resist pattern 58 as a mask, this portion is preferably removed by using a sand blast machine (fine powder type, manufactured by Fuji Seisakusho). The portion of the thick film 54 exposed in the opening between the patterns is removed to form a thick film fine pattern 60 (FIG. 3A). Alumina powder having a Mohs hardness of 12 is used as the abrasive. The particle size of the abrasive is preferably one-third of the distance L between the patterns because the cutting efficiency is high. In this embodiment, since the distance L between the patterns is 150 μm,
An abrasive having a particle size of 40 to 50 μm is used. When alumina powder is used as an abrasive, the glass substrate 50 is damaged and the glass substrate 50 becomes ground glass. In order to prevent this, an abrasive having a Mohs hardness of about 2, for example, Fuji Random S-2 (trade name) manufactured by Fuji Seisakusho may be used. The abrasive is removed with an air blower. When the thick film fine pattern 60 is formed, this cutting is also performed on the resin layer, and the resin layer pattern 62 is also formed (FIG. 3).
(A)).

Next, the substrate on which the thick film fine pattern was formed was placed in an organic alkali stripper (manufactured by Tokyo Ohka) at room temperature to 4 ° C.
The resist pattern 58 is immersed at 0 ° C. for 3 to 10 minutes and washed with water to remove the resist pattern 58 (FIG. 3B).

Next, the substrate from which the resist pattern has been removed is baked at 580 ° C. (peak holding time: 10 minutes) to decompose the resin layer pattern 62. As a result, the thick-film fine pattern 60 is fixed on the glass substrate 50 directly, that is, in a state of direct contact. ((C) of FIG. 3). After firing, the thick-film fine pattern is fixed to the glass substrate even without the resin layer. Therefore, there is no possibility that the thick-film fine pattern will be peeled off from the glass substrate even if a wet treatment is performed.

In the above-described embodiments, the present invention has been described with respect to an example in which a specific material is used and formed under specific conditions. However, the present invention can be subjected to many modifications and variations. For example, in the above-described embodiment, an example was described in which an acrylic resin paste was used as the resin paste. However, in the present invention, a paste obtained by dissolving a cellulose resin in an organic solvent, for example, Okuno Pharmaceutical, screen
The strike # 6009 (product name) may be used. Further, the thick film paste is not limited to silver paste, and any paste of dielectric, resistor, and conductor may be used.

[0034]

According to the method of forming a fine pattern of a thick film on a glass substrate according to the present invention, by providing a resin layer between the glass substrate and the thick film, the thickness of the glass substrate can be reduced. Adhesion can be improved. Therefore, when forming a thick-film fine pattern in a state of being in direct contact with a glass substrate,
For example, when a fine and complicated wiring pattern is formed on a glass substrate, peeling of a thick film fine pattern from the glass substrate during wet processing can be prevented.

Moreover, since the thick film fine pattern is fixed to the glass substrate after firing, there is no possibility that the thick film fine pattern will be peeled off from the glass substrate even if a wet treatment is performed after firing.

[Brief description of the drawings]

1 (A) to 1 (C) show a thick film fine pattern of the present invention.
FIG. 4 is a process chart for explaining a method of forming a conductive layer;

2 (A) to 2 (D) are diagrams showing a thick film fine pattern according to the present invention.
It is a process diagram of the first half used for description of the formation method of a pattern.

3 (A) to 3 (C) are diagrams each showing a thick film fine pattern according to the present invention.
FIG. 7 is a process chart of the latter half for explaining the method of forming the layer.

FIGS. 4A to 4E are process diagrams for explaining a conventional method for forming a thick-film fine pattern on a glass substrate using a sandblast method.

[Explanation of symbols]

 REFERENCE SIGNS LIST 10 glass substrate 12 silver paste film 14 anti-sandblast resist layer 16 resist pattern 18 thick film fine pattern 50 glass substrate 52 resin layer 54 thick film 56 resist layer 58 resist pattern 60 thick film fine pattern 62 resin Layer pattern

 ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Hideo Sawai 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd. (56) References JP-A-3-283589 (JP, A) Hei 2-253692 (JP, A)

Claims (1)

(57) [Claims] 1. A method for forming a thick film fine pattern on a glass substrate by using a sand blast method, comprising the steps of: (a) forming a cellulose or acrylic resin layer on the glass substrate; (B) a step of forming a thick film on the resin layer; (c) a step of forming a resist pattern on the thick film; and (d) a thick film fine pattern by sandblasting on the thick film. (E) removing the resist pattern after forming the thick film fine pattern; and (f) removing the resist pattern after forming the thick film fine pattern. Baking the glass substrate on which the thin film is formed to decompose the resin layer, and fixing the thick film fine pattern to the glass substrate.