JP2657265B2 - Method for stabilizing compound semiconductor surface - Google Patents
Method for stabilizing compound semiconductor surfaceInfo
- Publication number
- JP2657265B2 JP2657265B2 JP10447689A JP10447689A JP2657265B2 JP 2657265 B2 JP2657265 B2 JP 2657265B2 JP 10447689 A JP10447689 A JP 10447689A JP 10447689 A JP10447689 A JP 10447689A JP 2657265 B2 JP2657265 B2 JP 2657265B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- sulfur
- gallium arsenide
- semiconductor surface
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、化合物半導体表面の安定化方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for stabilizing a compound semiconductor surface.
［従来の技術］ 砒化ガリウム（GaAs）およびそれに類似の化合物半導
体の表面には、特有の活性・不安定性がある。このた
め、雰囲気中の気体の吸着や酸化の進行などにより、化
合物半導体の表面の電気的あるいは光学的特性が経時的
に変化する。このことは、これらの化合物半導体装置の
寿命や信頼性の向上の大きな妨げの一つとなっている。2. Description of the Related Art The surface of gallium arsenide (GaAs) and a compound semiconductor similar thereto have specific activity and instability. For this reason, the electrical or optical characteristics of the surface of the compound semiconductor change over time due to the adsorption of gas in the atmosphere or the progress of oxidation. This is one of the major obstacles to improving the life and reliability of these compound semiconductor devices.
このため、現在砒化ガリウム表面を何らかの手法で不
活性化し、電気的・光学的特性を安定化させることが強
く求められている。For this reason, it is now strongly demanded that the surface of gallium arsenide be inactivated by some method to stabilize electrical and optical characteristics.
本発明者等は、先に砒化ガリウム表面を硫化アンモニ
ウムの水溶液で処理することにより、表面を安定化させ
る方法を1988年８月に開催された「20th Conference on
Solid State Devices and Materials,Tokyo,1988」に
て発表した。この方法によれば、砒化ガリウム表面に硫
黄の薄膜が形成され、この薄膜により、砒化ガリウム表
面が保護され、その電気的・光学的特性を改善すること
ができる。The present inventors have previously described a method of stabilizing the surface of gallium arsenide by treating the surface with an aqueous solution of ammonium sulfide at the “20th Conference on August 1988”.
Solid State Devices and Materials, Tokyo, 1988 ". According to this method, a thin film of sulfur is formed on the surface of gallium arsenide, and the thin film protects the surface of gallium arsenide and improves its electrical and optical characteristics.
［発明が解決しようとする課題］ しかしながら、水溶液を用いるこの方法では、硫黄薄
膜形成後に、ドライプロセスを実施しようとする場合、
処理後の基板の乾燥に手間がかかるため、製作工程に長
時間を要するという欠点があった。[Problem to be Solved by the Invention] However, in this method using an aqueous solution, when a dry process is to be performed after forming a sulfur thin film,
Since it takes time and effort to dry the substrate after the treatment, there is a disadvantage that the manufacturing process requires a long time.
［課題を解決するための手段］ 本発明は、砒化ガリウム等の表面を有機溶媒中に溶解
した硫黄で処理して、表面に強固に付着した硫黄の薄膜
を形成し、砒化ガリウム表面を安定化させる。有機溶媒
は水と比べ乾燥が容易であるため、製作工程の迅速化が
はかれる点に大きな特色がある。Means for Solving the Problems The present invention stabilizes the surface of gallium arsenide by treating the surface of gallium arsenide or the like with sulfur dissolved in an organic solvent to form a thin film of sulfur firmly attached to the surface. Let it. The organic solvent is easier to dry than water, and thus has a great feature in that the manufacturing process can be sped up.
［作用］ 硫化アンモニウムの水溶液に比較して迅速に蒸発する
有機溶媒中に溶解した硫黄で砒化ガリウム表面を処理す
る。この処理によって形成された硫黄の薄膜は、砒化ガ
リウム表面と強固な結合をもつので、雰囲気からの気体
の吸着が阻害され、表面での化学反応が抑えられる。そ
の結果、長期間安定した電気的・光学的特性を有する化
合物半導体装置が得られる。この処理に際し、有機溶媒
を用いるので、硫黄薄膜形成後、迅速にドライプロセス
に移行できる。[Action] The gallium arsenide surface is treated with sulfur dissolved in an organic solvent that evaporates more rapidly than an aqueous solution of ammonium sulfide. Since the sulfur thin film formed by this treatment has a strong bond with the gallium arsenide surface, adsorption of gas from the atmosphere is inhibited, and a chemical reaction on the surface is suppressed. As a result, a compound semiconductor device having stable electrical and optical characteristics for a long time can be obtained. Since an organic solvent is used in this treatment, the process can be quickly shifted to the dry process after the formation of the sulfur thin film.
［実施例］ 砒化ガリウムからなるｎ型半導体基板（不純物濃度約
５×10+15cm-3）を用意し、硫酸（H2SO4）：過酸化水素
（H2O2）：水（H2O）を5:1:1とした混合液でエッチング
する。次いで、同試薬で混合比のみ5:1:40とした溶液で
軽くエッチング後、水洗し取り出して付着している水
を、窒素（N2）ガスを吹き付けて飛ばす。[Example] An n-type semiconductor substrate made of gallium arsenide (impurity concentration of about 5 × 10 +15 cm −3 ) was prepared, and sulfuric acid (H 2 SO 4 ): hydrogen peroxide (H 2 O 2 ): water (H the 2 O) 5: 1: is etched by 1, and the mixture. Next, after lightly etching with a solution of the same reagent at a mixing ratio of 5: 1: 40, washing with water, taking out and adhering water is blown off by blowing nitrogen (N 2 ) gas.
このようにして清浄化した基板を５％の硫黄を含む80
℃のキシレン溶液に約10分間以上浸し、紫外光を照射す
る。取り出すと、キシレンが蒸発し、あとに硫黄の皮膜
が残される。この皮膜は、大過剰の硫黄を含んでおり、
基板をさらに減圧雰囲気に30分間放置すると、大部分の
硫黄は除かれ、半導体表面の安定化に寄与する強く結合
した硫黄のみが残される。The substrate cleaned in this way contains 5% sulfur 80
Immerse in xylene solution at ℃ for more than 10 minutes and irradiate with ultraviolet light. Upon removal, the xylene evaporates, leaving behind a sulfur film. This film contains a large excess of sulfur,
When the substrate is further left in a reduced pressure atmosphere for 30 minutes, most of the sulfur is removed, leaving only strongly bound sulfur which contributes to the stabilization of the semiconductor surface.
なお、本実施例においては、硫黄の溶解度を上げ、溶
液中の活性分子種を増加させるため、紫外線の照射を行
なったが、紫外線の照射の代わりに加熱することもでき
る。In the present embodiment, ultraviolet irradiation is performed in order to increase the solubility of sulfur and increase the number of active molecular species in the solution. However, heating may be performed instead of ultraviolet irradiation.
さらに、有機溶媒として、沸点が高いこと、毒性が少
ないこと、および引火性の低いことからキシレンを使用
したが、ベンゼンなどの芳香族炭化水素、クロロベンゼ
ンなどのハロゲン化芳香族炭化水素、四塩化炭素（CC
l4）、および二硫化炭素（CS2）なども使用可能であ
る。Furthermore, xylene was used as the organic solvent because of its high boiling point, low toxicity, and low flammability, but aromatic hydrocarbons such as benzene, halogenated aromatic hydrocarbons such as chlorobenzene, and carbon tetrachloride were used. (CC
l 4), and carbon disulfide (CS 2) may also be used.
上記実施例は砒化ガリウム半導体についてのみ説明し
たが、本発明は何等これに限定されることなく、砒化ア
ルミニウム等の類似の化合物半導体および、それらの混
晶系にも適用できる。In the above embodiment, only the gallium arsenide semiconductor was described. However, the present invention is not limited to this, and can be applied to similar compound semiconductors such as aluminum arsenide and mixed crystal systems thereof.
［発明の効果］ 以上説明したように、本発明においては、砒化ガリウ
ム等の化合物半導体の表面を有機溶媒中に溶解した硫黄
で処理しているので、そのフォトルミネッセス強度に
は、処理を行なわない場合と比較して、数倍の強度の改
善が見られ、表面が安定化されていることが示された。[Effects of the Invention] As described above, in the present invention, the surface of a compound semiconductor such as gallium arsenide is treated with sulfur dissolved in an organic solvent. The strength was improved several times as compared with the case where no treatment was performed, indicating that the surface was stabilized.
Claims (2)
液で処理することを特徴とする化合物半導体表面の安定
化方法1. A method for stabilizing a surface of a compound semiconductor, comprising treating the surface of the compound semiconductor with an organic solvent solution of sulfur.
ン化芳香族炭化水素、四塩化炭素、および二硫化炭素の
内の一つである請求項（１）記載の化合物半導体表面の
安定化方法。2. The method according to claim 1, wherein the organic solvent is one of an aromatic hydrocarbon, a halogenated aromatic hydrocarbon, carbon tetrachloride, and carbon disulfide. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10447689A JP2657265B2 (en) | 1989-04-26 | 1989-04-26 | Method for stabilizing compound semiconductor surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10447689A JP2657265B2 (en) | 1989-04-26 | 1989-04-26 | Method for stabilizing compound semiconductor surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02284422A JPH02284422A (en) | 1990-11-21 |
| JP2657265B2 true JP2657265B2 (en) | 1997-09-24 |
Family
ID=14381624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10447689A Expired - Lifetime JP2657265B2 (en) | 1989-04-26 | 1989-04-26 | Method for stabilizing compound semiconductor surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2657265B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014064002A (en) * | 2013-09-11 | 2014-04-10 | Sumitomo Electric Ind Ltd | GaN SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE |
| US8952494B2 (en) | 2009-09-30 | 2015-02-10 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor substrate having a sulfide in a surface layer |
| US9070828B2 (en) | 2009-09-30 | 2015-06-30 | Sumitomo Electric Industries, Ltd. | III nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
-
1989
- 1989-04-26 JP JP10447689A patent/JP2657265B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8952494B2 (en) | 2009-09-30 | 2015-02-10 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor substrate having a sulfide in a surface layer |
| US9070828B2 (en) | 2009-09-30 | 2015-06-30 | Sumitomo Electric Industries, Ltd. | III nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
| US9299890B2 (en) | 2009-09-30 | 2016-03-29 | Sumitomo Electric Industries, Ltd. | III nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
| JP2014064002A (en) * | 2013-09-11 | 2014-04-10 | Sumitomo Electric Ind Ltd | GaN SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02284422A (en) | 1990-11-21 |
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