JP2642538B2 - Semiconductor wafer manufacturing equipment - Google Patents
Semiconductor wafer manufacturing equipmentInfo
- Publication number
- JP2642538B2 JP2642538B2 JP3185593A JP18559391A JP2642538B2 JP 2642538 B2 JP2642538 B2 JP 2642538B2 JP 3185593 A JP3185593 A JP 3185593A JP 18559391 A JP18559391 A JP 18559391A JP 2642538 B2 JP2642538 B2 JP 2642538B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- bevel surface
- polishing
- bevel
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、シリコン、サファイヤ
或いはヒ化ガリウム等からなる半導体ウェーハの製造す
るのに使用して最適な半導体ウェーハの製造装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer manufacturing apparatus most suitable for manufacturing a semiconductor wafer made of silicon, sapphire or gallium arsenide.
【0002】[0002]
【従来の技術】LSIなどの大集積回路を製作する材料
である半導体ウェーハの製造方法として、出願人は、特
願昭57−169105号として、図2に示すようなも
のを提案した。2. Description of the Related Art As a method of manufacturing a semiconductor wafer which is a material for manufacturing a large integrated circuit such as an LSI, the applicant has proposed a method shown in FIG. 2 as Japanese Patent Application No. 57-169105.
【0003】即ち、先ず同図(A)に示すシリコン等の
単結晶半導体棒1から、ダイヤモンドカッタ等を用いて
同図(B)に示すスライス片1aを切り出して薄板状の
半導体ウェーハ2を作り出す。次に、同図(C)に示す
ように、半導体ウェーハ2のエッジ部にベベル加工(面
取り)を施してベベル面2cを形成する。That is, first, a slice 1a shown in FIG. 1B is cut out from a single crystal semiconductor rod 1 made of silicon or the like shown in FIG. 1A by using a diamond cutter or the like to produce a thin semiconductor wafer 2. . Next, as shown in FIG. 3C, the edge portion of the semiconductor wafer 2 is subjected to bevel processing (chamfering) to form a bevel surface 2c.
【0004】ここでベベル加工は、例えば図3に示すベ
ベル装置3を用いて行われる。つまり、このベベル装置
3は、ステンレス或いはニッケル等からなる台金4の上
面に両側を傾斜面とした凹部5を形成し、この凹部5の
表面にダイヤモンド6,6…をニッケルメッキして付着
させて、#50〜100程度のメッシュの砥石面とした
ものである。そして、上記凹部5に回転する半導体ウェ
ーハ2のエッジ部を押し当てて研削することによりベベ
ル加工を施す。Here, the bevel processing is performed using, for example, a bevel apparatus 3 shown in FIG. That is, the bevel device 3 forms a concave portion 5 having inclined surfaces on both sides on the upper surface of a base metal 4 made of stainless steel or nickel, and attaches diamond 6, 6,... To the surface of the concave portion 5 by nickel plating. And a grindstone surface of about # 50-100 mesh. Then, beveling is performed by pressing the edge of the rotating semiconductor wafer 2 against the recess 5 and grinding it.
【0005】そして、同図(D)に示すように、この半
導体ウェーハ2の表面2a及び裏面2bの両面を同時に
研磨するラッピング加工を施した後、同図(E)に示す
如く、半導体ウェーハ2の全外周面、即ち表面2a,裏
面2b及びベベル面2cの全ての面を酢酸とフッ酸の混
液等によってエッチングし、これによってカッタ跡等を
除去して平滑面となす。Then, as shown in FIG. 1D, a lapping process for simultaneously polishing both the front surface 2a and the back surface 2b of the semiconductor wafer 2 is performed, and then, as shown in FIG. Is etched by a mixed solution of acetic acid and hydrofluoric acid, etc., thereby removing cutter traces and the like to form a smooth surface.
【0006】しかる後、同図(F)に示すように、少な
くとも表面2aとベベル面2cとを、更には必要に応じ
て裏面2bをも、研磨布を用いて鏡面に研磨する鏡面仕
上げを施し、これをその後のデバイスプロセスに供する
半導体ウェーハ7とするようにしたものである。Thereafter, as shown in FIG. 1F, at least the front surface 2a and the bevel surface 2c and, if necessary, the back surface 2b are also mirror-finished using a polishing cloth. This is to be a semiconductor wafer 7 to be subjected to a subsequent device process.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、上記の
ように半導体ウェーハのエッジ部に形成されたベベル面
を研磨布を用いて鏡面仕上げしようとしても、この鏡面
仕上げを行うための装置が存在していないのが現状であ
る。However, even if the bevel surface formed at the edge of the semiconductor wafer is to be mirror-finished using a polishing cloth as described above, there is an apparatus for performing this mirror-finish. There is no present.
【0008】本発明は上記に鑑み、半導体ウェハのエッ
ジ部に形成されたベベル面を容易かつ確実に鏡面仕上げ
することができるようにした半導体ウェーハの製造装置
を提供することを目的とする。SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a semiconductor wafer manufacturing apparatus capable of easily and surely mirror-finishing a bevel surface formed at an edge portion of a semiconductor wafer.
【0009】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明に係る半導体ウェーハの製造装置は、エッジ
部にベベル面が形成された半導体ウェーハを保持して回
転させる回転装置と、前記ベベル面に接触するよう配置
され、この回転装置に保持された半導体ウェーハのベベ
ル面との接触部表面に前記ベベル面を鏡面仕上げ研磨す
る研磨布を貼設した研磨装置とを備え、前記ベベル面を
鏡面仕上げすることを特徴とする。また、エッジ部にベ
ベル面が形成された半導体ウェーハを保持して回転させ
る回転装置と、前記ベベル面に接触するよう静止配置さ
れ、この回転装置に保持された半導体ウェーハのベベル
面との接触部表面に前記ベベル面を鏡面仕上げ研磨する
研磨布を貼設した研磨装置とを備え、前記ベベル面を鏡
面仕上げすることを特徴とする。また、エッジ部にベベ
ル面が形成された半導体ウェーハをその表裏面の両側か
ら挟持して回転させる回転装置と、前記ベベル面に接触
するよう配置され、この回転装置に保持された半導体ウ
ェーハのベベル面との接触部表面に前記ベベル面を鏡面
仕上げ研磨する研磨布を貼設した研磨装置とを備え、前
記ベベル面を鏡面仕上げすることを特徴とする。また、
エッジ部にベベル面が形成された半導体ウェーハを保持
して回転させる回転装置と、前記ベベル面に接触するよ
う配置され、この回転装置に保持された半導体ウェーハ
のベベル面との接触部表面に前記ベベル面を鏡面仕上げ
研磨する研磨布を、前記半導体ウェーハの円周長一部に
相当する長さで貼設した研磨装置とを備え、前記ベベル
面を鏡面仕上げすることを特徴とする。To achieve the above object, a semiconductor wafer manufacturing apparatus according to the present invention comprises: a rotating device for holding and rotating a semiconductor wafer having a bevel surface formed at an edge portion; And a polishing device in which a polishing cloth for mirror-finishing the bevel surface is attached to a surface of a contact portion with a bevel surface of the semiconductor wafer held by the rotating device, and the bevel surface is provided. It is characterized by a mirror finish. A rotating device for holding and rotating a semiconductor wafer having a bevel surface formed at an edge portion; and a rotating device that is stationaryly arranged so as to contact the bevel surface and a contact portion of the semiconductor wafer held by the rotating device with the bevel surface. A polishing apparatus having a polishing cloth for polishing the bevel surface to a mirror finish on the surface thereof, wherein the bevel surface is mirror-finished. A rotating device for clamping and rotating a semiconductor wafer having a bevel surface formed on an edge portion from both sides of the front and back surfaces thereof; and a bevel device for the semiconductor wafer held by the rotating device, the device being arranged to be in contact with the bevel surface. A polishing device in which a polishing cloth for polishing the bevel surface to a mirror finish is attached to a surface of a contact portion with the surface, and the bevel surface is mirror-finished. Also,
A rotating device for holding and rotating a semiconductor wafer having a bevel surface formed on an edge portion, and a rotating device arranged to be in contact with the bevel surface, and a contact portion surface of the semiconductor wafer held by the rotating device with a bevel surface; A polishing apparatus for attaching a polishing cloth for polishing the bevel surface to a mirror finish with a length corresponding to a part of the circumferential length of the semiconductor wafer, wherein the bevel surface is mirror-finished.
【0010】[0010]
【作用】上記のように構成した本発明によれば、回転装
置で半導体ウェーハを水平軸に対して交叉した状態で保
持し、この状態で回転装置を介して半導体ウェーハを回
転させることにより、ベベル面に接触するよう研磨装置
の表面に貼設された研磨布でベベル面を研磨してこの鏡
面仕上げを行うことができる。According to the present invention constructed as described above, the semiconductor wafer is held by the rotating device in a state of crossing the horizontal axis, and the semiconductor wafer is rotated through the rotating device in this state, whereby the bevel is obtained. The mirror finish can be performed by polishing the bevel surface with a polishing cloth stuck on the surface of the polishing device so as to contact the surface.
【0011】[0011]
【実施例】以下、本発明の一実施例を図1を参照して説
明する。An embodiment of the present invention will be described below with reference to FIG.
【0012】図1は、本発明に係る半導体ウェーハの製
造装置の側面図を示すもので、この製造装置は、横置き
に配置されたモータ8の水平方向に延びる回転軸9の先
端にウェーハ固定治具10を連接した回転装置11と、
この回転装置11の近傍に配置され、研磨用台金12の
表面に凹部13を設けるとともに、この凹部13内の表
面に研磨布14を貼設した研磨装置15とから主に構成
されている。FIG. 1 is a side view of an apparatus for manufacturing a semiconductor wafer according to the present invention. This apparatus is mounted on a tip of a horizontally extending rotary shaft 9 of a motor 8 arranged horizontally. A rotating device 11 connected to a jig 10;
A polishing device 15 is provided near the rotating device 11 and has a concave portion 13 provided on the surface of the polishing base 12 and a polishing device 15 having a polishing cloth 14 attached to the surface inside the concave portion 13.
【0013】前記ウェーハ固定治具10は、半導体ウェ
ーハ2のほぼ中央部を前後方向から挟持してこれを保持
するものであり、これにより半導体ウェーハ2は、水平
軸と直角に交叉する鉛直方向に配置された状態で保持さ
れることになる。The wafer fixing jig 10 clamps and holds a substantially central portion of the semiconductor wafer 2 in the front-rear direction, thereby holding the semiconductor wafer 2 in a vertical direction crossing the horizontal axis at right angles. It will be kept in the arranged state.
【0014】また、前記研磨布14は、ベベル面2cを
研磨して鏡面仕上げするためのものであり、固定治具1
0で半導体ウェーハ2を保持した際、このエッジ部に形
成されたベベル面2cとこの研磨布14とが接触する位
置に、即ち半導体ウェーハ2のエッジ部が凹部13内に
入り込んで、この凹部13の表面に貼設された研磨布1
4とベベル面2cとが接触する位置に配置されている。The polishing cloth 14 is for polishing the bevel surface 2c to a mirror finish, and the fixing jig 1
0, the semiconductor wafer 2 is held at a position where the bevel surface 2c formed at the edge and the polishing pad 14 are in contact with each other, that is, the edge of the semiconductor wafer 2 enters the recess 13 and the recess 13 Polishing cloth 1 stuck on the surface of
4 and the bevel surface 2c are arranged at positions where they contact each other.
【0015】これにより、回転装置11のウェーハ固定
治具10で半導体ウェーハ2を鉛直状態に保持し、この
状態でモータ8を介して半導体ウェーハ2を回転させる
ことにより、この半導体ウェーハ2のベベル面2cに接
触するよう研磨装置15の表面に貼設された研磨布14
で該ベベル面2cを研磨してこの鏡面仕上げを行うこと
ができるようなされている。As a result, the semiconductor wafer 2 is held vertically by the wafer fixing jig 10 of the rotating device 11 and the semiconductor wafer 2 is rotated via the motor 8 in this state, whereby the bevel surface of the semiconductor wafer 2 is Polishing cloth 14 attached to the surface of the polishing device 15 so as to come into contact with 2c
The mirror surface finish can be performed by polishing the bevel surface 2c.
【0016】このように、モータ8を駆動せしめて半導
体ウェーハ2のベベル面2cを研磨布14で鏡面仕上げ
することにより、化学エッチング即ちケミカルポリッシ
ングしてもなお小さな凹凸及び粉砕層が残るエッジ部の
ベベル面2cを平滑な鏡面となすことができる。As described above, the bevel surface 2c of the semiconductor wafer 2 is mirror-finished with the polishing pad 14 by driving the motor 8, so that even if chemical etching, that is, chemical polishing, small unevenness and a pulverized layer remain at the edge portion. The bevel surface 2c can be a smooth mirror surface.
【0017】而して、図2(A)に示すシリコン等の単
結晶半導体棒1から、ダイヤモンドカッタ等を用いて同
図(B)に示すスライス片1aを切り出して薄板状の半
導体ウェーハ2を作り出し、同図(C)に示すように、
半導体ウェーハ2のエッジ部に例えば図3に示すベベル
装置3を用いてベベル加工(面取り)を施すことによ
り、ベベル面2cを形成する。そして、同図(D)に示
すように、この半導体ウェーハ2の表面2a及び裏面2
bの両面を同時に研磨するラッピング加工を施した後、
同図(E)に示す如く、半導体ウェーハ2の全外周面、
即ち表面2a,裏面2b及びベベル面2cの全ての面を
酢酸とフッ酸の混液等によってエッチングし、これによ
ってカッタ跡等を除去して平滑面となす。Then, a slice 1a shown in FIG. 2B is cut out from a single crystal semiconductor rod 1 made of silicon or the like shown in FIG. And as shown in the same figure (C),
The bevel surface 2c is formed by subjecting the edge portion of the semiconductor wafer 2 to bevel processing (chamfering) using, for example, a bevel device 3 shown in FIG. Then, as shown in FIG. 2D, the front surface 2 a and the back surface 2
After the lapping process of polishing both sides of b simultaneously,
As shown in FIG.
That is, all surfaces of the front surface 2a, the back surface 2b, and the bevel surface 2c are etched with a mixed solution of acetic acid and hydrofluoric acid, thereby removing cutter traces and the like to form a smooth surface.
【0018】しかる後、同図(F)に示すように、少な
くとも表面2aとベベル面2cとを、更には必要に応じ
て裏面2bをも、研磨布を用いて鏡面に研磨する鏡面仕
上げを施して、これをその後のデバイスプロセスに供す
る半導体ウェハ7とするのであるが、この時、半導体ウ
ェーハ2のエッジ部に形成されたベベル面2cの鏡面仕
上げを上記のように構成した半導体ウェーハ製造装置を
用いて行うのである。Thereafter, as shown in FIG. 1F, at least the front surface 2a and the bevel surface 2c and, if necessary, the back surface 2b are also mirror-finished by polishing with a polishing cloth. Then, this is used as a semiconductor wafer 7 to be subjected to a subsequent device process. At this time, a semiconductor wafer manufacturing apparatus in which the mirror finish of the bevel surface 2c formed at the edge portion of the semiconductor wafer 2 is configured as described above is used. It is done using.
【0019】このように鏡面仕上げしたベベル面2cに
は、チッ化シリコン或いはポリシリコンの蒸着時にデン
ドライト結晶が発生しないことが実験によって確かめら
れている。Experiments have confirmed that no dendrite crystal is generated on the mirror-finished bevel surface 2c during the deposition of silicon nitride or polysilicon.
【0020】なお、上記実地例においては、半導体ウェ
ーハ2を鉛直状態に保持するようにした例を示している
が、これを傾斜した状態で保持するよう、即ち図1にお
けるモータ8を鉛直方向に90度未満回転させた状態で
配置するようにすることもできる。In the practical example described above, an example is shown in which the semiconductor wafer 2 is held in a vertical state. However, the semiconductor wafer 2 is held in an inclined state, that is, the motor 8 in FIG. It can also be arranged in a state rotated by less than 90 degrees.
【0021】また、凹部13を設けることなく、台金1
2の表面の半導体ウェーハ2のエッジ部に形成されたベ
ベル面2cとの接触位置に研磨布14を貼設するように
しても良いことは勿論である。Further, the base metal 1 can be provided without providing the recess 13.
Needless to say, the polishing pad 14 may be attached to a contact position of the surface of the semiconductor wafer 2 with the bevel surface 2c formed at the edge of the semiconductor wafer 2.
【0022】[0022]
【発明の効果】本発明は、上記のような構成であるの
で、ベベル面を鏡面仕上げすることにより、ウェーハ製
造時及びこのウェーハからデバイスを製作する際に、エ
ッジ部にチップや欠けが生じることなく、且つ窒化シリ
コン、ポリシリコンの蒸着時にベベル面にデンドライト
結晶が成長しにくく、且つベベル面にSiクズ、Si、
Si2等のクズが生じることなく、しかもその後のデバ
イスプロセスにおいて微粒子が発生せず高デバイス歩留
を得ることができるようにした半導体ウェーハのベベル
面における鏡面仕上げを、容易かつ確実に行って、半導
体ウェーハを製造することができる。また、研磨布を静
止配置したので、研磨装置と回転装置との両者が回転機
構を有する場合に比べて、装置全体をコンパクトで簡易
な構造て構成することができる。また、回転装置は半導
体ウェーハの表裏面の両側から挟持して回転させるよう
にしたので、半導体ウェーハの片側面のみで保持して回
転させる場合に比べて、半導体ウェーハが回転ぶれを受
けることがなく、高精度の鏡面仕上げが可能になる。ま
た、研磨布を半導体ウェーハの円周長一部に相当する長
さで貼設するようにしたので、回転装置の回転体の全周
に渡って装着されている場合に比べて、短い長さの研磨
布を用いるだけで足り、研磨布の消耗管理や交換を容易
に行うことができる。また、ベベル面が加工された状態
で鏡面仕上げすることにより、研磨布に対して負担を軽
減させることができる。According to the present invention, the bevel surface is mirror-finished so that chips and chips are generated at an edge portion when a wafer is manufactured and when a device is manufactured from this wafer. And it is difficult for dendrite crystals to grow on the bevel surface during the deposition of silicon nitride and polysilicon, and Si bead, Si,
The mirror surface finish on the bevel surface of a semiconductor wafer which is capable of obtaining a high device yield without generation of fine particles in subsequent device processes without generating scraps of Si 2 or the like is easily and reliably performed. Semiconductor wafers can be manufactured. In addition, since the polishing cloth is stationary, the entire apparatus can be configured with a compact and simple structure as compared with a case where both the polishing apparatus and the rotating apparatus have a rotating mechanism. In addition, since the rotating device is configured to hold and rotate the semiconductor wafer from both sides of the front and back surfaces, the semiconductor wafer is not subject to rotational shake compared to the case where the semiconductor wafer is held and rotated only on one side of the semiconductor wafer. , High-precision mirror finish is possible. In addition, since the polishing cloth is attached with a length corresponding to a part of the circumferential length of the semiconductor wafer, the length is shorter than when the polishing pad is attached over the entire circumference of the rotating body of the rotating device. Only the use of the polishing cloth is sufficient, and the consumption management and replacement of the polishing cloth can be easily performed. In addition, by performing mirror finishing in a state where the bevel surface is processed, the burden on the polishing pad can be reduced.
【図1】本発明の一実施例を示す側面図。FIG. 1 is a side view showing one embodiment of the present invention.
【図2】本発明に供される半導体ウェーハの製造を工程
順に示す図。FIG. 2 is a view showing a process of manufacturing a semiconductor wafer used in the present invention in the order of steps.
【図3】ベベル装置の側面図。FIG. 3 is a side view of the bevel device.
2 半導体ウェーハ 2c 同ベベル面 8 モータ 10 ウェーハ固定治具 11 回転装置 14 研磨布 15 研磨装置 2 Semiconductor wafer 2c Same bevel surface 8 Motor 10 Wafer fixing jig 11 Rotating device 14 Polishing cloth 15 Polishing device
Claims (3)
ェーハを保持して回転させる回転装置と、 前記ベベル面に接触するよう静止配置され、この回転装
置に保持された半導体ウェーハのベベル面との接触部表
面に前記ベベル面を鏡面仕上げ研磨する研磨布を貼設し
た研磨装置とを備え、前記ベベル面を鏡面仕上げするこ
とを特徴とする半導体ウェーハの製造装置。1. A rotating device for holding and rotating a semiconductor wafer having a bevel surface formed at an edge portion, and a rotating device that is stationaryly arranged to be in contact with the bevel surface, and a bevel surface of the semiconductor wafer held by the rotating device. A polishing device having a polishing cloth for polishing the bevel surface to a mirror finish on the surface of the contact portion of the semiconductor device, wherein the bevel surface is mirror-finished.
ェーハをその表裏面の両側から挟持して回転させる回転
装置と、 前記ベベル面に接触するよう配置され、この回転装置に
保持された半導体ウェーハのベベル面との接触部表面に
前記ベベル面を鏡面仕上げ研磨する研磨布を貼設した研
磨装置とを備え、前記ベベル面を鏡面仕上げすることを
特徴とする半導体ウェーハの製造装置。2. A rotating device for holding and rotating a semiconductor wafer having a bevel surface formed on an edge portion from both sides of the front and back surfaces thereof; and a semiconductor device arranged to be in contact with the bevel surface and held by the rotating device. A polishing device having a polishing cloth for polishing the bevel surface to a mirror finish on the surface of a contact portion with the bevel surface of the wafer, wherein the bevel surface is mirror-finished.
ェーハを保持して回転させる回転装置と、 前記ベベル面に接触するよう配置され、この回転装置に
保持された半導体ウェーハのベベル面との接触部表面に
前記ベベル面を鏡面仕上げ研磨する研磨布を、前記半導
体ウェーハの円周長一部に相当する長さで貼設した研磨
装置とを備え、前記ベベル面を鏡面仕上げすることを特
徴とする半導体ウェーハの製造装置。3. A rotating device for holding and rotating a semiconductor wafer having a bevel surface formed at an edge portion, and a rotating device arranged to contact the bevel surface and a bevel surface of the semiconductor wafer held by the rotating device. A polishing device that has a polishing cloth attached to the surface of the contact portion to mirror-polish the bevel surface with a length corresponding to a part of a circumferential length of the semiconductor wafer, wherein the bevel surface is mirror-finished. Semiconductor wafer manufacturing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3185593A JP2642538B2 (en) | 1991-06-29 | 1991-06-29 | Semiconductor wafer manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3185593A JP2642538B2 (en) | 1991-06-29 | 1991-06-29 | Semiconductor wafer manufacturing equipment |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57169105A Division JPS5958827A (en) | 1982-09-28 | 1982-09-28 | Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH056881A JPH056881A (en) | 1993-01-14 |
JP2642538B2 true JP2642538B2 (en) | 1997-08-20 |
Family
ID=16173519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3185593A Expired - Lifetime JP2642538B2 (en) | 1991-06-29 | 1991-06-29 | Semiconductor wafer manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2642538B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6685539B1 (en) | 1999-08-24 | 2004-02-03 | Ricoh Company, Ltd. | Processing tool, method of producing tool, processing method and processing apparatus |
US6722964B2 (en) | 2000-04-04 | 2004-04-20 | Ebara Corporation | Polishing apparatus and method |
JP3949941B2 (en) * | 2001-11-26 | 2007-07-25 | 株式会社東芝 | Semiconductor device manufacturing method and polishing apparatus |
US7559825B2 (en) | 2006-12-21 | 2009-07-14 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5918273B2 (en) * | 1979-08-15 | 1984-04-26 | 積水化成品工業株式会社 | Container for transporting vegetables |
-
1991
- 1991-06-29 JP JP3185593A patent/JP2642538B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH056881A (en) | 1993-01-14 |
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