JP2627274B2 - Low fever antibody for thermal head - Google Patents
Low fever antibody for thermal headInfo
- Publication number
- JP2627274B2 JP2627274B2 JP62213596A JP21359687A JP2627274B2 JP 2627274 B2 JP2627274 B2 JP 2627274B2 JP 62213596 A JP62213596 A JP 62213596A JP 21359687 A JP21359687 A JP 21359687A JP 2627274 B2 JP2627274 B2 JP 2627274B2
- Authority
- JP
- Japan
- Prior art keywords
- sio
- resistance
- thermal head
- sno
- heating resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Non-Adjustable Resistors (AREA)
- Electronic Switches (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は高速、高解像度、低価格化などが要求されて
いるコンピュータ、ワードプロセッサ、ファクシミリ等
に用いられるサーマルヘッドの発熱要素である発熱抵抗
体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a heating element which is a heating element of a thermal head used for a computer, a word processor, a facsimile, etc., for which high speed, high resolution, low cost, etc. are required. About.
〔発明の概要〕 本発明は発熱抵抗体としてTa−SnO2−SiO2薄膜を用い
ることにより、比抵抗が大きく、抵抗温度係数が小さく
かつ耐パルス性のある長寿命で低コストのサーマルヘッ
ドを提供するものである。The Summary of the Invention The present invention is the use of a Ta-SnO 2 -SiO 2 thin film as a heating resistor, the resistivity is increased, the cost of the thermal head in life temperature coefficient of resistance with a small and pulse resistance To provide.
従来、発熱抵抗体としては、Ta2N,Ni−Cr系,Cr−Si−
O,Ta−Si,Ta−Si−C,Ta−SiO2などの材料が用いられて
いる。Conventionally, as a heating resistor, Ta 2 N, Ni-Cr, Cr-Si-
O, Ta-Si, Ta- Si-C, materials such Ta-SiO 2 is used.
サーマルヘッドの発熱抵抗体としては、高抵抗化、高
密度化のために比抵抗の高い材料であり、抵抗温度係数
が小さく、かつ長寿命化の為に繰り返し駆動パルスが与
えられた場合でも抵抗値変化の少ない耐パルス性のある
材料が求められている。The heating resistor of the thermal head is made of a material with high specific resistance for high resistance and high density.It has a small temperature coefficient of resistance. There is a need for a pulse-resistant material having a small value change.
しかし、前述のTa2N,Ni−Cr系,Cr−Si−O,Ta−Si,Ta
−SiCなどは、比抵抗が小さく、耐熱性が十分でないな
どの欠点を有し、又、繰り返し駆動パルスによる抵抗値
の変化も要求に十分に応えることができなかった。However, the above-mentioned Ta 2 N, Ni-Cr, Cr-Si-O, Ta-Si, Ta
-SiC and the like have drawbacks such as low specific resistance and insufficient heat resistance, and the change in resistance value due to repeated driving pulses cannot be sufficiently satisfied.
又、比抵抗を高くするためにTa−SiO2が用いられてい
るが、比抵抗が大きくなると共に、抵抗温度係数も大き
くなるという欠点があった。Although Ta-SiO 2 is used to increase the specific resistance, there is a drawback that the specific resistance increases and the temperature coefficient of resistance also increases.
本発明は、上記問題点を解決するためにTa−SiO2に微
量のSnO2を添加、焼結したTa−SnO2−SiO2ターゲットを
用い、スパッタリングにより得たTa−SnO2−SiO2薄膜を
発熱抵抗体として用いるものである。The present invention, addition of SnO 2 traces the Ta-SiO 2 in order to solve the above problems, using a Ta-SnO 2 -SiO 2 target obtained by sintering, Ta-SnO 2 -SiO 2 film obtained by sputtering Is used as a heating resistor.
前述のように本発明によれば、サーマルヘッドの発熱
抵抗体をTa−SiO2にSnO2を添加して形成しているので、
比抵抗が大きく、抵抗温度係数が小さく、かつ耐パルス
性のある発熱抵抗体を得ることができる。As described above, according to the present invention, the heating resistor of the thermal head is formed by adding SnO 2 to Ta-SiO 2 ,
A heating resistor having a large specific resistance, a small temperature coefficient of resistance, and pulse resistance can be obtained.
実施例としてTa−SnO2−SiO2を発熱抵抗体として用い
たサーマルヘッドの特性を以下に示す。尚、比較のため
Ta−SiO2を従来例とした。The characteristics of a thermal head using Ta—SnO 2 —SiO 2 as a heating resistor will be described below as examples. For comparison
Ta-SiO 2 is a conventional example.
製作したサーマルヘッドの発熱部の概要を第１図に示
す。下から順にアルミナ等の絶縁性基板１、蓄熱用のグ
レーズガラス層２、発熱抵抗体３、Cr,Cu,Au等の電極4,
5,及びSiO2,Ta2O5,SiC等の保護膜を形成した構造とし
た。この時、発熱抵抗体３にTa−SiO2及びTa−SnO2−Si
O2を用いた場合の比抵抗と抵抗温度係数の関係を第２図
に示す。比抵抗値はスパッタ条件によっても変化する
が、今回は、Ta,SiO2,SnO2の重量モル％により制御を行
い、Ta−SiO2については、ターゲットの重量モル％をTa
が60〜50％、残りSiO2、Ta−SnO2−SiO2については、Si
O2が40％、SnO2が１〜５％、残りTaとしてスパッタリン
グを行った。Ta−SiO2の場合は、比抵抗の上昇と共に抵
抗温度係数が大きく変化しているが、SnO2を添加した場
合は、抵抗温度係数が小さく、変化も少なくという結果
が得られた。またそれぞれのサーマルヘッドについてス
テップストレステストを行った結果を第３図に示す。試
験条件はパルス幅1msec、パルス周期5msecで１×104回
パルスの連続印加を行った。Ta−SiO2の場合は印加電力
の増加と共に抵抗変化率が大きくマイナス側に変化した
後、破断するのに対して、SnO2を添加したものは、抵抗
変化率が小さく、破断するまでの印加電力も大きくなっ
ており、耐パルス性のある長寿命のヘッドが得られた。FIG. 1 shows an outline of the heat generating portion of the manufactured thermal head. An insulating substrate 1 of alumina or the like, a glaze glass layer 2 for heat storage, a heating resistor 3, electrodes 4 of Cr, Cu, Au, etc.
5, and a structure in which a protective film of SiO 2 , Ta 2 O 5 , SiC, etc. was formed. At this time, Ta—SiO 2 and Ta—SnO 2 —Si are added to the heating resistor 3.
FIG. 2 shows the relationship between the specific resistance and the temperature coefficient of resistance when O 2 is used. Although the specific resistance value changes depending sputtering conditions, this time, Ta, performs control by SiO 2, SnO 2 weight mol%, for the Ta-SiO 2, the weight mole percent of the target Ta
But 60 to 50% for the rest SiO 2, Ta-SnO 2 -SiO 2, Si
O 2 is 40% SnO 2 is 1-5%, sputtering was performed as the remaining Ta. In the case of Ta—SiO 2, the temperature coefficient of resistance greatly changed with the increase of the specific resistance. However, when SnO 2 was added, the result that the temperature coefficient of resistance was small and the change was small. FIG. 3 shows the results of a step stress test performed on each of the thermal heads. The test conditions were a pulse width of 1 msec, a pulse period of 5 msec, and continuous application of 1 × 10 4 pulses. After the case of ta-SiO 2 was changed to increase the negative side is the rate of change in resistance with increasing applied power, with respect to fracture, which was added SnO 2, the resistance change rate is small, applied until rupture The power was also increased, and a long-life head with pulse resistance was obtained.
以上、述べてきたようにTa−SnO2−SiO2を用いた発熱
抵抗体は、比抵抗が大きく、抵抗温度係数が小さく、か
つ耐パルス性があるため、高速、高解像度のサーマルヘ
ッドを得ることができ、また高価なTaにかえて安価なSn
O2を添加することから、低価格化へも対応が可能となる
ものである。Or more, said the Ta-SnO 2 -SiO 2 As we have heating resistor used, the specific resistance is large, the resistance temperature coefficient is small and there is a pulse resistance, to obtain a high speed, high resolution thermal head Inexpensive Sn instead of expensive Ta
By adding O 2 , it is possible to cope with lower prices.
第１図は、製作したサーマルヘッドの発熱部の概略断面
図、第２図、第３図は発熱抵抗体としてTa−SiO2,Ta−S
nO2−SiO2を用いた時の比抵抗と抵抗温度係数の関係、
及びステップストレステスト結果を示す説明図である。FIG. 1 is a schematic sectional view of a heat generating portion of the manufactured thermal head, and FIGS. 2 and 3 are Ta-SiO 2 and Ta-S as heat generating resistors.
Relationship between specific resistance and temperature coefficient of resistance when using nO 2 -SiO 2 ,
FIG. 6 is an explanatory diagram showing a step stress test result.
Claims (2)
を用いて、スパッタリング法により形成されたTa−SnO2
−SiO2薄膜を発熱体層として備えたことを特徴とするサ
ーマルヘッド用発熱抵抗体。[Claim 1] A Ta-SiO 2 by using a target obtained by adding SnO 2, Ta-SnO 2 which is formed by sputtering
A heating resistor for a thermal head, comprising a SiO 2 thin film as a heating element layer.
％であることを特徴とする請求項１記載のサーマルヘッ
ド用発熱抵抗体。2. The method according to claim 1, wherein said target has a SnO 2 weight% of 1-5.
The heating resistor for a thermal head according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213596A JP2627274B2 (en) | 1987-08-27 | 1987-08-27 | Low fever antibody for thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213596A JP2627274B2 (en) | 1987-08-27 | 1987-08-27 | Low fever antibody for thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01133755A JPH01133755A (en) | 1989-05-25 |
| JP2627274B2 true JP2627274B2 (en) | 1997-07-02 |
Family
ID=16641809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62213596A Expired - Lifetime JP2627274B2 (en) | 1987-08-27 | 1987-08-27 | Low fever antibody for thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2627274B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7214295B2 (en) * | 2001-04-09 | 2007-05-08 | Vishay Dale Electronics, Inc. | Method for tantalum pentoxide moisture barrier in film resistors |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037701A (en) * | 1983-08-10 | 1985-02-27 | 沖電気工業株式会社 | Thin film resistor |
| US4720418A (en) * | 1985-07-01 | 1988-01-19 | Cts Corporation | Pre-reacted resistor paint, and resistors made therefrom |
-
1987
- 1987-08-27 JP JP62213596A patent/JP2627274B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01133755A (en) | 1989-05-25 |
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Legal Events
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|---|---|---|---|
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Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
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