JP2615855B2 - Electronic device substrate cutting method - Google Patents

Electronic device substrate cutting method

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Publication number
JP2615855B2
JP2615855B2 JP13688188A JP13688188A JP2615855B2 JP 2615855 B2 JP2615855 B2 JP 2615855B2 JP 13688188 A JP13688188 A JP 13688188A JP 13688188 A JP13688188 A JP 13688188A JP 2615855 B2 JP2615855 B2 JP 2615855B2
Authority
JP
Japan
Prior art keywords
cutting
electronic device
device substrate
light receiving
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13688188A
Other languages
Japanese (ja)
Other versions
JPH01306170A (en
Inventor
一広 鈴木
裕一 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP13688188A priority Critical patent/JP2615855B2/en
Publication of JPH01306170A publication Critical patent/JPH01306170A/en
Application granted granted Critical
Publication of JP2615855B2 publication Critical patent/JP2615855B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 A.発明の目的 (1) 産業上の利用分野 本発明は表面に薄膜または厚膜形成技術によって発熱
抵抗体または光電変換素子等の作用素子が形成された電
子デバイス基板の切断方法に関する。
DETAILED DESCRIPTION OF THE INVENTION A. Object of the Invention (1) Field of Industrial Application The present invention relates to an electronic device substrate having a heating element or a photoelectric conversion element formed on its surface by a thin film or thick film forming technique. Cutting method.

前記電子デバイス基板としては、薄膜によって発熱抵
抗体が列設されたサーマルヘッド用絶縁基板、光電変換
素子が列設されたファクシミリ用のセラミック基板等が
有る。
Examples of the electronic device substrate include a thermal head insulating substrate in which heating resistors are arranged in a thin film, a facsimile ceramic substrate in which photoelectric conversion elements are arranged, and the like.

(2) 従来の技術 第5,6図には従来の長尺密着形イメージセンサSの一
例が示されている。この長尺密着形イメージセンサS
は、支持板01の上面の先端側部分(第5図中、上側部
分)にその長手方向(第5図中、X方向)に沿って、複
数のセラミック基板02,02がそれぞれの側端面(第5図
中、左右の端面)どうしを近接させた状態で支持されて
いる。
(2) Prior Art FIGS. 5 and 6 show an example of a conventional long contact image sensor S. FIG. This long contact type image sensor S
A plurality of ceramic substrates 02, 02 are respectively formed on the front end portion (upper portion in FIG. 5) of the upper surface of the support plate 01 along the longitudinal direction (X direction in FIG. 5). In FIG. 5, left and right end surfaces are supported in a state where they are close to each other.

前記セラミック基板02表面には、その長手方向(第5
図中、X方向)に沿って多数の個別電極03,03,…が列設
されている。各個別電極03は、個別電極本体部04と、該
本体部04の基端部(第6図中、右側部分)に形成された
IC接続端子05と、本体部04の先端部(第6図中、左側部
分)に形成された四角状の画素電極06とから構成されて
いる。前記画素電極06の上面には帯状のアモルファスシ
リコン(a−Si)から成る光導電層07および透明な共通
電極08が順次積層されており、これらの画素電極06、光
導電層07および共通電極08によって作用素子としての受
光素子09が形成されている。
On the surface of the ceramic substrate 02, its longitudinal direction (the fifth
A large number of individual electrodes 03, 03, ... Are arranged in a row along the X direction). Each individual electrode 03 is formed on the individual electrode body portion 04 and the base end portion (right side portion in FIG. 6) of the body portion 04.
It is composed of an IC connection terminal 05 and a rectangular pixel electrode 06 formed at the tip portion (left side portion in FIG. 6) of the main body portion 04. On the upper surface of the pixel electrode 06, a strip-shaped photoconductive layer 07 made of amorphous silicon (a-Si) and a transparent common electrode 08 are sequentially laminated. These pixel electrode 06, photoconductive layer 07 and common electrode 08 are stacked. Thus, a light receiving element 09 as an operation element is formed.

また、前記長尺イメージセンサSは、支持板01の上面
に基端側部分(第5図中、下側部分)にその長手方向
(第5図中、X方向)に沿って、複数の樹脂製のプリン
ト配線板010,010,…がそれぞれの側端面どうしを近接さ
せた状態で支持されている。
In addition, the long image sensor S has a plurality of resin portions along a longitudinal direction (X direction in FIG. 5) on a base end portion (lower portion in FIG. 5) on the upper surface of the support plate 01. ... are supported with their side end surfaces close to each other.

前記プリント配線板010表面にはその長手方向(第5
図中、X方向)に沿って外部接続用の配線パターン011
が形成されている。この配線パターン011は、前記プリ
ント配線板010の先端側部分(第5図中、上側部分)か
ら基端側部分に向かって、IC載置用電極ライン011a、複
数のIC制御ライン011b,011b,…、および読取信号伝送ラ
イン011c等から形成されている。
On the surface of the printed wiring board 010, its longitudinal direction (the fifth
The wiring pattern for external connection 011 along the X direction in the figure)
Are formed. The wiring pattern 011 extends from the front end portion (the upper portion in FIG. 5) of the printed wiring board 010 toward the base end portion, and the IC mounting electrode line 011a, the plurality of IC control lines 011b, 011b, , And a read signal transmission line 011c and the like.

前記IC載置用電源ライン011a上には、その長手方向に
沿って複数の駆動用IC012が載置されており、その駆動
用IC012は、ボンディングワイヤ013および014によって
前記個別電極IC接続端子05および配線パターン011のIC
制御ライン011b、読取信号伝送ライン011cと接続されて
いる。
On the IC mounting power supply line 011a, a plurality of driving ICs 012 are mounted along the longitudinal direction thereof, and the driving IC 012 has the individual electrode IC connection terminals 05 and Wiring pattern 011 IC
It is connected to the control line 011b and the read signal transmission line 011c.

前記セラミック基板02上の四角形状の受光素子09は、
85μmの幅を有し1mm当たり8個形成されている場合が
多いが、その場合各受光素子09間の間隔は40μmであ
る。そうすると、各セラミック基板02上の受光素子09の
うちで外側端に配置された端部受光素子09aの外周縁
は、セラミック基板02の側端面から20μmの位置に在る
ことになる。
The square light receiving element 09 on the ceramic substrate 02 is
In many cases, eight light emitting elements are formed with a width of 85 μm per 1 mm. In this case, the interval between the light receiving elements 09 is 40 μm. Then, the outer peripheral edge of the end light receiving element 09a disposed at the outer end of the light receiving elements 09 on each ceramic substrate 02 is located at a position 20 μm from the side end surface of the ceramic substrate 02.

そこで、前記端部受光素子09aをセラミック基板02の
側端面に極めて近接した位置に形成する必要がある。
Therefore, it is necessary to form the end light receiving element 09a at a position extremely close to the side end surface of the ceramic substrate 02.

(3) 発明が解決しようとする課題 前述のように、セラミック基板02の側端面に近接した
位置に前記端部受光素子09aを形成する方法としては、
最初から所定長さに切断されたセラミック基板02上に端
部受光素子09aを含む受光素子09,09、…列を形成する方
法(第1の方法)が考えられる。
(3) Problems to be Solved by the Invention As described above, as a method of forming the end light receiving element 09a at a position close to the side end surface of the ceramic substrate 02,
A method (first method) of forming the light receiving elements 09, 09, ... Rows including the end light receiving elements 09a on the ceramic substrate 02 cut from the beginning to a predetermined length is conceivable.

ところが前記第1の方法では、セラミック基板02上に
薄膜形成技術によって受光素子09,09…列を形成するた
めの着膜を行う際、セラミック基板02側端面近傍の着膜
と基板02中央部の着膜とを均質に形成することができな
いので、出来上がった受光素子09は、セラミック基板02
の側端面近傍に形成されたものと、側端面から離れて形
成されたものとが均質でなく、特性が異なるという問題
点があった。
However, in the first method, when a film is formed on the ceramic substrate 02 for forming light receiving elements 09, 09... Since the deposition film cannot be formed uniformly, the finished light receiving element 09 has a ceramic substrate 02.
There is a problem in that the one formed near the side end face and the one formed apart from the side end face are not homogeneous and have different characteristics.

そこで、第7図に示すように、適当な長さに切断され
たセラミック基板02上に受光素子09,09,…列を形成した
後、端部受光素子09aの端縁から20μmの位置に在る切
断線lに沿ってそのセラミック基板02を切断し、所定長
さにする方法(第2の方法)が考えられる。
Therefore, as shown in FIG. 7, after forming the light receiving elements 09, 09, ... Rows on the ceramic substrate 02 cut to an appropriate length, they are located at a position 20 μm from the edge of the end light receiving element 09a. A method (second method) in which the ceramic substrate 02 is cut along a cutting line l to make it a predetermined length is conceivable.

ところが、前記第2の方法では、適当な長さのセラミ
ック基板02上に受光素子09,09,…列を形成してから、そ
のセラミック基板02をダイサまたはレーザビーム等によ
って所定長さに切断する際、切断箇所近傍の端部受光素
子09aを含むいくつかの受光素子09が機械的または熱的
損傷を受けてその特性が変化するという問題点があっ
た。
However, in the second method, after the light receiving elements 09, 09, ... Are formed on the ceramic substrate 02 having an appropriate length, the ceramic substrate 02 is cut into a predetermined length by a dicer or a laser beam. In this case, there has been a problem that some light receiving elements 09 including the end light receiving element 09a near the cut portion are mechanically or thermally damaged and their characteristics are changed.

たとえば、セラミック基板02を第7図に示すように端
部受光素子09aの端縁より20μの位置に在る切断線l−
lに沿って、ダイサにより切断した場合、その切断面近
傍の端部受光素子09aを含むいくつかの受光素子09のI
−V特性は、暗出力が比較的高くなる。これは、切断面
近傍の受光素子09を形成する光導電層07のはがれか、ま
たは切断した際の熱によって前記光導電層07または透明
な共通電極08の特性が変化したためと考えられる。
For example, as shown in FIG. 7, the ceramic substrate 02 is cut along a cutting line l- 20 μm from the edge of the end light receiving element 09a.
When cut by a dicer along the line l, some of the light receiving elements 09 including the end light receiving element 09a near the cut surface have an I
The -V characteristic has a relatively high dark output. It is considered that this is because the photoconductive layer 07 forming the light receiving element 09 near the cut surface is peeled off or the characteristics of the photoconductive layer 07 or the transparent common electrode 08 are changed by the heat generated when cutting.

以上は密着形イメージセンサSを例にして、膜形成技
術によって受光素子09が形成されたセラミック基板02を
切断する場合の問題点を述べたが、前述の問題点は前記
セラミック基板02に限らず、一般に膜形成技術によって
形成された作用素子(イメージセンサの受光素子、サー
マルヘッドの発熱抵抗体等)が形成された電子デバイス
基板を前記作用素子に近接した位置で切断する場合に生
じる問題点である。
In the above, the problem of cutting the ceramic substrate 02 on which the light receiving element 09 is formed by the film forming technique has been described using the example of the contact type image sensor S, but the above-described problem is not limited to the ceramic substrate 02. In general, there is a problem that occurs when an electronic device substrate on which an active element (a light receiving element of an image sensor, a heating resistor of a thermal head, etc.) formed by a film forming technique is formed at a position close to the active element. is there.

本発明は前述の事情に鑑みてなされたもので、表面
(着膜面)に作用素子が形成された電子デバイス基板を
切断する際、切断部近傍の作用素子の特性変化を少なく
することを課題とする。
The present invention has been made in view of the above circumstances, and has an object to reduce a change in characteristics of an active element in the vicinity of a cut portion when cutting an electronic device substrate having an active element formed on a surface (film-formed surface). And

B.発明の構成 (1) 課題を解決するための手段 前記課題を達成するために、本発明の電子デバイス基
板の切断方法は、着膜面上に膜形成技術によって作用素
子が形成された電子デバイス基板の切断方法において、 切断時に特性変化を生じ易い作用素子構成要素を切断
用溝が形成された着膜面上に形成してから、前記切断用
溝が形成されている部分を切断用溝に沿って切削刃によ
り切断することを特徴とする。
B. Configuration of the Invention (1) Means for Solving the Problems In order to achieve the above object, a method for cutting an electronic device substrate according to the present invention provides an electronic device in which an action element is formed on a deposition surface by a film forming technique. In the method for cutting a device substrate, after forming an active element component which is liable to cause a change in characteristics at the time of cutting on a deposition surface on which a cutting groove is formed, a portion where the cutting groove is formed is cut. Characterized by cutting with a cutting blade along.

(2) 作用 前述の本発明の電子デバイス基板の切断方法は、切断
用溝が形成される着膜面上に膜形成技術によって作用素
子を形成する際、電子デバイス基板の切断時に特性変化
を生じ易い作用素子構成要素は切断用溝が形成された後
に形成される。このような作用素子が形成された電子デ
バイス基板を切断する際、前記切断用溝が形成されてい
る部分を切断用溝に沿って切削刃により切断すると、切
断用溝の近傍の着膜面上に形成された作用素子から離れ
た位置で電子デバイス基板に切削刃を接触させることが
可能になる。したがって、作用素子は電子デバイス基板
の切削時に切削刃から受ける影響が少なくなるので、そ
の特性変化が少なくなる。
(2) Function In the above-described method for cutting an electronic device substrate of the present invention, when an action element is formed by a film forming technique on a deposition surface on which a cutting groove is formed, a characteristic change occurs when the electronic device substrate is cut. The operative element component is easily formed after the cutting groove is formed. When cutting the electronic device substrate on which such an action element is formed, when the portion where the cutting groove is formed is cut by a cutting blade along the cutting groove, the cut surface is formed on the deposition surface near the cutting groove. It becomes possible to bring the cutting blade into contact with the electronic device substrate at a position distant from the working element formed on the. Therefore, the working element is less affected by the cutting blade when the electronic device substrate is cut, so that the characteristic change is reduced.

(3) 実施例 以下、図面にもとずいて本発明による着膜基板の切断
方法の一実施例について説明する。第1図(A),
(B)〜第4図(A),(B)は、電子デバイス基板の
一例としての密着形のイメージセンサに使用されるセラ
ミック基板の切断方法の説明図である。
(3) Example An example of the method for cutting a film-coated substrate according to the present invention will be described below with reference to the drawings. FIG. 1 (A),
FIGS. 4 (B) to 4 (A) and 4 (B) are explanatory views of a method of cutting a ceramic substrate used in a contact type image sensor as an example of an electronic device substrate.

第1図(A),(B)に示すように、セラミック基板
1の上面(着膜面)にクロムCrから成る個別電極2,2,…
を形成する。これらの各個別電極2は、個別電極本体部
3と、該本体部3の両端部に形成されたIC接続端子4お
よび作用素子構成要素としての画素電極5とから構成さ
れている。
As shown in FIGS. 1 (A) and 1 (B), individual electrodes 2, 2,.
To form. Each of these individual electrodes 2 is composed of an individual electrode main body 3, IC connection terminals 4 formed at both ends of the main body 3, and a pixel electrode 5 as a working element component.

次に第2図(A),(B)に示すように、画素電極5
の端縁から20μの位置に幅500μ、深さ150〜200μの切
断用溝6を形成する。この切断用溝6はダイサまたはレ
ーザによって形成する。
Next, as shown in FIGS. 2A and 2B, the pixel electrode 5
A cutting groove 6 having a width of 500 μm and a depth of 150 to 200 μm is formed at a position of 20 μm from the edge of the. This cutting groove 6 is formed by a dicer or a laser.

次に第3図(A),(B)に示すように、前記切断用
溝6が形成されたセラミック基板1上面(着膜面)の画
素電極5上に帯状の作用素子構成要素としての光導電層
7および作用素子構成要素としての透明な共通電極8を
順次積層する。そうすると、前記画素電極5,5,…、光導
電層7および透明共通電極8から多数の作用素子として
の受光素子9,9,…が形成される。前記受光素子9の構成
要素である画素電極5,5,…、光導電層7および透明共通
電極8のうち、切断時に特性変化を起こし易い構成要素
7,8は、前述のように切断用溝6を形成した後に形成す
る。
Next, as shown in FIGS. 3 (A) and 3 (B), a band-shaped light as a working element component is formed on the pixel electrode 5 on the upper surface (coating surface) of the ceramic substrate 1 on which the cutting groove 6 is formed. A conductive layer 7 and a transparent common electrode 8 as a working element component are sequentially laminated. .., The photoconductive layer 7 and the transparent common electrode 8 form light receiving elements 9, 9,. Among the pixel electrodes 5, 5,..., The photoconductive layer 7 and the transparent common electrode 8, which are the components of the light receiving element 9, those components that are likely to change in characteristics when cut.
7, 8 are formed after forming the cutting groove 6 as described above.

次に第4図(B)に示すように、幅300μの切削刃と
してのブレード10を用いてダイサにより切断用溝6の中
を切断する。その切断の際第4図(B)のように、セラ
ミック基板1に対するブレード10の姿勢を、切断用溝6
の前記受光素子9に隣接する垂直壁7aから斜め下方内側
に傾斜させることにより、端部を切り落とした後のセラ
ミック基板1の外端面にバリが残らないようにする。
Next, as shown in FIG. 4B, the inside of the cutting groove 6 is cut by a dicer using a blade 10 as a cutting blade having a width of 300 μm. At the time of cutting, as shown in FIG. 4 (B), the attitude of the blade 10 with respect to the ceramic substrate 1 is set to the groove 6 for cutting.
By inclining obliquely downward and inward from the vertical wall 7a adjacent to the light receiving element 9, no burr remains on the outer end face of the ceramic substrate 1 after the end is cut off.

次に、前述の構成を備えた本発明の実施例の作用につ
いて説明する。
Next, the operation of the embodiment of the present invention having the above configuration will be described.

前述のようにして、受光素子9,9,…が形成されたセラ
ミック基板(着膜基板)1を切断すると、その切断の
際、セラミック基板1上の光導電層7および透明共通電
極8に直接ブレード10が接触しないので、光導電層7お
よび透明共通電極8は剥がれ難くなり、また、熱による
影響も少なくなる。
As described above, when the ceramic substrate (coating substrate) 1 on which the light receiving elements 9, 9,... Are formed is cut, the photoconductive layer 7 and the transparent common electrode 8 on the ceramic substrate 1 are directly cut at the time of cutting. Since the blade 10 does not contact, the photoconductive layer 7 and the transparent common electrode 8 are less likely to be peeled off, and the influence of heat is reduced.

以上、本発明による電子デバイス基板の切断方法の実
施例を詳述したが、本発明は、前述の実施例に限定され
るものではなく、特許請求の範囲に記載された本発明を
逸脱することなく、種々の設計変更を行うことが可能で
ある。
As described above, the embodiment of the method for cutting an electronic device substrate according to the present invention has been described in detail. However, the present invention is not limited to the above-described embodiment, and departs from the present invention described in the claims. Instead, various design changes can be made.

たとえば、本発明は密着形イメージセンサのセラミッ
ク基板1だけでなく、膜形成技術によって多数の発熱抵
抗体が形成されたサーマルヘッドの基板に対しても適用
できる。
For example, the present invention can be applied not only to the ceramic substrate 1 of the contact image sensor but also to a substrate of a thermal head having a large number of heating resistors formed by a film forming technique.

C.発明の効果 前述の本発明の電子デバイス基板の切断方法によれ
ば、表面(着膜面)に作用素子が形成された電子デバイ
ス基板を切断する際、予め形成された切断用溝の部分で
切断するようにしたので、切断部近傍の作用素子の特性
の変化を防止することができる。
C. Effects of the Invention According to the above-described method for cutting an electronic device substrate of the present invention, when cutting an electronic device substrate on which a working element is formed on a surface (deposited surface), a portion of a cutting groove formed in advance is used. Since the cutting is performed at the position, it is possible to prevent a change in the characteristics of the working element near the cut portion.

【図面の簡単な説明】[Brief description of the drawings]

第1図(A),(B)〜第4図(A),(B)は本発明
による電子デバイス基板の切断方法の一実施例の説明図
で、第1図(A)は電子デバイス基板上面に電子デバイ
ス基板切断時の特性変化の少ない作用素子(画素電極)
を形成した状態を示す部分平面図、第1図(B)は第1
図(A)のI B−I B線に沿う断面図、第2図(A)は電
子デバイス基板の切断予定部分に切断用溝を形成した状
態を示す部分平面図、第2図(B)は第2図(A)のII
B−II B線に沿う断面図、第3図(A)は切断用溝が形
成された電子デバイス基板上に切断時に特性変化を生じ
易い作用素子(光導電層および透明共通電極)を形成し
た状態を示す部分平面図、第3図(B)は第3図(A)
のIII B−III B線に沿う断面図、第4図(A)は電子デ
バイス基板を切削刃によって切断した場合を説明する部
分平面図、第4図(B)は第4図(A)のIV B−IV B線
に沿う断面図、第5〜7図は従来技術の説明図、であ
る。 1……電子デバイス基板(セラミック基板)、6……切
断用溝、7……光導電層(作用素子構成要素)、8……
透明共通電極(作用素子構成要素)、9……受光素子
(作用素子)、10……切削刃(ブレード)
1 (A) and (B) to FIGS. 4 (A) and 4 (B) are explanatory views of an embodiment of a method for cutting an electronic device substrate according to the present invention, and FIG. 1 (A) is an electronic device substrate. Action element (pixel electrode) with little change in characteristics when cutting the electronic device substrate on the top surface
FIG. 1 (B) is a partial plan view showing a state in which
FIG. 2A is a sectional view taken along line IB-IB in FIG. 2A, FIG. 2A is a partial plan view showing a state in which a cutting groove is formed in a portion to be cut of an electronic device substrate, and FIG. II in Fig. 2 (A)
FIG. 3 (A) is a cross-sectional view taken along line B-II B, in which an action element (photoconductive layer and transparent common electrode) is formed on an electronic device substrate in which a cutting groove is formed, the characteristics of which are likely to change during cutting. Partial plan view showing the state, FIG. 3 (B) is FIG. 3 (A)
4 (A) is a partial plan view illustrating a case where the electronic device substrate is cut by a cutting blade, and FIG. 4 (B) is a sectional view of FIG. 4 (A). FIG. 5 is a sectional view taken along the line IV B-IV B, and FIGS. 1 ... Electronic device substrate (ceramic substrate), 6 ... cutting groove, 7 ... photoconductive layer (working element component), 8 ...
Transparent common electrode (acting element component), 9 ... Light receiving element (acting element), 10 ... Cutting blade (blade)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】着膜面上に膜形成技術によって作用素子
(9)が形成された電子デバイス基板(1)の切断方法
において、 切断時に特性変化を生じ易い作用素子構成要素(7,8)
を切断用溝(6)が形成された着膜面上に形成してか
ら、前記切断用溝(6)が形成されている部分を切断用
溝(6)に沿って切削刃(10)により切断する電子デバ
イス基板の切断方法。
1. A method for cutting an electronic device substrate (1) in which an operating element (9) is formed on a film-deposited surface by a film forming technique, wherein an operating element component (7, 8) which is liable to change in characteristics at the time of cutting.
Is formed on the deposition surface on which the cutting groove (6) is formed, and the portion where the cutting groove (6) is formed is cut along the cutting groove (6) by a cutting blade (10). A method for cutting an electronic device substrate to be cut.
JP13688188A 1988-06-03 1988-06-03 Electronic device substrate cutting method Expired - Lifetime JP2615855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13688188A JP2615855B2 (en) 1988-06-03 1988-06-03 Electronic device substrate cutting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13688188A JP2615855B2 (en) 1988-06-03 1988-06-03 Electronic device substrate cutting method

Publications (2)

Publication Number Publication Date
JPH01306170A JPH01306170A (en) 1989-12-11
JP2615855B2 true JP2615855B2 (en) 1997-06-04

Family

ID=15185726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13688188A Expired - Lifetime JP2615855B2 (en) 1988-06-03 1988-06-03 Electronic device substrate cutting method

Country Status (1)

Country Link
JP (1) JP2615855B2 (en)

Also Published As

Publication number Publication date
JPH01306170A (en) 1989-12-11

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