JP2588428B2 - Drive circuit abnormality detection device - Google Patents

Drive circuit abnormality detection device

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Publication number
JP2588428B2
JP2588428B2 JP1011048A JP1104889A JP2588428B2 JP 2588428 B2 JP2588428 B2 JP 2588428B2 JP 1011048 A JP1011048 A JP 1011048A JP 1104889 A JP1104889 A JP 1104889A JP 2588428 B2 JP2588428 B2 JP 2588428B2
Authority
JP
Japan
Prior art keywords
detection circuit
abnormality detection
semiconductor element
circuit
drive circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1011048A
Other languages
Japanese (ja)
Other versions
JPH02192316A (en
Inventor
裕彦 小山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aida Engineering Ltd
Original Assignee
Aida Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aida Engineering Ltd filed Critical Aida Engineering Ltd
Priority to JP1011048A priority Critical patent/JP2588428B2/en
Publication of JPH02192316A publication Critical patent/JPH02192316A/en
Application granted granted Critical
Publication of JP2588428B2 publication Critical patent/JP2588428B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Emergency Protection Circuit Devices (AREA)
  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体素子を通して印加した交流電源により
ソレノイド等の負荷を駆動する駆動回路の異常検出装置
に関する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a drive circuit abnormality detection device that drives a load such as a solenoid by an AC power supply applied through a semiconductor element.

[従来の技術] スイッチ,補助リレ等の開閉器によりON−OFFされる
交流電源を印加してソレノイド等負荷を駆動するいわゆ
る駆動回路が広く知られている。
2. Description of the Related Art A drive circuit for driving a load such as a solenoid by applying an AC power supply that is turned on and off by a switch such as a switch or an auxiliary relay is widely known.

ところで、例えばプレス機械のクラッチブレーキ用エ
アーを供給するソレノイド弁を駆動させるような場合に
は、その適時で正確な駆動が要請されかつ一層の安全性
向上の観点から駆動回路の構成要素が慎重に吟味されて
いる。その一つとして、上記ソレノイド弁の駆動回路の
開閉器としてはロータリーカムスイッチや継電器が採用
されている場合が多い。この理由は、半導体素子が対称
故障性つまり導通側に壊れまたは遮断側に壊れる性質を
有するからである。
By the way, for example, when driving a solenoid valve that supplies air for clutch brake of a press machine, timely and accurate drive is required, and from the viewpoint of further improving safety, the components of the drive circuit are carefully selected. Has been scrutinized. As one of them, a rotary cam switch or a relay is often adopted as a switch of the drive circuit of the solenoid valve. The reason for this is that the semiconductor element has a symmetrical fault property, that is, a property of breaking on the conduction side or breaking on the interruption side.

[発明が解決しようとする課題] しかしながら、400〜1000Spmという高速・超高速化が
求められるプレス機械等においては、追従速度の点から
開閉器に半導体素子を採用せざるを得なくなる。
[Problems to be Solved by the Invention] However, in a press machine or the like that requires a high speed and an ultra-high speed of 400 to 1000 Spm, a semiconductor element has to be used for the switch in terms of the following speed.

かくして、半導体素子を用いた駆動回路では、半導体
素子、回路系の信頼性を上げることはもとより安全で円
滑な運転をするためには確実でしかもフェイルセイフな
異常検出装置が必要となる。
Thus, in a drive circuit using a semiconductor element, a reliable and fail-safe abnormality detection device is required for safe and smooth operation as well as for improving the reliability of the semiconductor element and the circuit system.

ここに本発明の目的は、異常を迅速かつ正確に検出す
るとともにその故障内容を判定できる駆動回路の異常検
出装置を提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a drive circuit abnormality detection device capable of quickly and accurately detecting an abnormality and determining the content of the failure.

[課題を解決するための手段] 本発明は、とりわけ半導体素子が負荷電流を遮断する
場合に他の安全装置との関係等からフェイルセイフ側つ
まり異常検出信号を発生するように形成したものであ
る。
Means for Solving the Problems The present invention is formed so as to generate a fail-safe side, that is, an abnormality detection signal due to the relationship with other safety devices, especially when the semiconductor element interrupts the load current. .

すなわち、半導体素子を通して印加した交流電源によ
り負荷を駆動する駆動回路において、 前記半導体素子に並列接続され半導体素子が負荷電流
を遮断する状態で交流電源に同期したパルス信号を生成
するよう形成された異常検出回路と、 前記半導体素子の異常検出回路を流れる電流または負
荷電流の識別信号を検出する識別信号検出回路と、 該異常検出回路と識別信号検出回路との出力信号から
異常内容を判定する判定回路とを備えた構成である。
That is, in a drive circuit for driving a load by an AC power supply applied through a semiconductor element, an abnormality formed in parallel with the semiconductor element and generating a pulse signal synchronized with the AC power supply in a state where the semiconductor element cuts off a load current. A detection circuit; an identification signal detection circuit that detects an identification signal of a current flowing through the abnormality detection circuit of the semiconductor element or a load current; and a determination circuit that determines an abnormality content from output signals of the abnormality detection circuit and the identification signal detection circuit. This is a configuration including:

[作用] 上記構成による本発明では、半導体素子が負荷電流を
遮断するとパルス信号が生成されかつ負荷電流を流し続
けると異常検出回路がパルス信号を生成しなくなる。す
ると、判定回路は瞬時的にその異常を判定する。また、
判定回路は、識別信号検出回路から識別情報に基づきそ
の異常内容を具体的に知らしめることができる。
[Operation] In the present invention having the above-described configuration, a pulse signal is generated when the semiconductor element interrupts the load current, and the abnormality detection circuit does not generate a pulse signal when the load current continues to flow. Then, the determination circuit determines the abnormality instantaneously. Also,
The determination circuit can specifically notify the contents of the abnormality based on the identification information from the identification signal detection circuit.

[実施例] 以下、本発明の一実施例を図面を参照して詳細に説明
する。
Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

この実施例は第1図に示される。 This embodiment is shown in FIG.

図において、1は交流電源、2は双方向3端子制御整
流用半導体素子としてのトライアック(商品名)、3は
電路、4はプレス機械のクラッチブレーキ動作用のソレ
ノイド弁であり、これら機器(1,2,3,4)から駆動回路
が構成されている。
In the figure, 1 is an AC power supply, 2 is a triac (trade name) as a semiconductor element for bidirectional three-terminal control rectification, 3 is an electric circuit, 4 is a solenoid valve for operating a clutch brake of a press machine. , 2, 3, 4) constitute a drive circuit.

ここに、この駆動回路の異常検出装置は、異常検出回
路10、識別信号検出回路20および判定回路30とから形成
されている。
Here, the abnormality detection device for the drive circuit includes an abnormality detection circuit 10, an identification signal detection circuit 20, and a determination circuit 30.

まず、異常検出回路10は、半導体素子2に並列接続さ
れ負荷電流の遮断時にパルス信号を生成するフェイルセ
イフ側に形成される。具体的には、第1図に示す如く、
非対称故障素子たる抵抗11とホトカプラ12とからなる電
源同期パルス検出方式である。
First, the abnormality detection circuit 10 is formed on the fail-safe side which is connected in parallel with the semiconductor element 2 and generates a pulse signal when the load current is cut off. Specifically, as shown in FIG.
This is a power supply synchronous pulse detection method including a resistor 11 as an asymmetric failure element and a photocoupler 12.

なお、13は逆耐圧保護用のダイオードである。また、
抵抗14とコンデサ15からなる半導体素子2とホトカプラ
12との保護回路が設けられている。
Reference numeral 13 denotes a diode for reverse breakdown voltage protection. Also,
Semiconductor device 2 consisting of resistor 14 and capacitor 15 and photocoupler
A protection circuit with 12 is provided.

したがって、異常検出回路10は、半導体素子2が負荷
たるソレノイド弁4に負荷電流を流すことができないよ
うに遮断状態となった時にパルス信号を出力する。パル
ス信号は、交流電源1の周波数と等しい周波数の短形波
である。一方、導通状態に故障したときにはパルス信号
は発生しない。
Therefore, the abnormality detection circuit 10 outputs a pulse signal when the semiconductor element 2 is cut off so that the load current cannot flow through the solenoid valve 4 as a load. The pulse signal is a short wave having a frequency equal to the frequency of the AC power supply 1. On the other hand, when a failure occurs in the conduction state, no pulse signal is generated.

同様に、異常検出回路10つまり抵抗11が遮断状態に破
損し、ホトカプラ12が破損したとき、さらには電路3、
ソレノイド4が故障したときにもパルス信号を発生する
ことはない。換言すれば、異常検出回路10,電路3,ソレ
ノイド4が故障することは確率的に低く、また、半導体
素子2が導通状態に壊れた場合に不都合が多いことから
いわゆるフェイルセイフに形成したのである。
Similarly, when the abnormality detection circuit 10, that is, the resistor 11 is broken in the cutoff state and the photocoupler 12 is damaged, the electric circuit 3,
No pulse signal is generated when the solenoid 4 fails. In other words, the failure detection circuit 10, the electric circuit 3, and the solenoid 4 are stochastically low in failure, and there are many inconveniences when the semiconductor element 2 is broken into a conductive state. .

次に、識別信号検出回路20は、異常検出回路10を流れ
るローレベル電流と半導体素子2のハイレベル負荷電流
を識別し、検出する手段であり、この実施例では、電路
3中に接続されたコイルを含む変成器21とダイオード22
とから構成されている。
Next, the identification signal detection circuit 20 is a means for identifying and detecting the low level current flowing through the abnormality detection circuit 10 and the high level load current of the semiconductor element 2. In this embodiment, the identification signal detection circuit 20 is connected to the electric circuit 3. Transformer 21 including coil and diode 22
It is composed of

また、判定回路30は、異常検出回路10からのパルス信
号と識別信号検出回路20からの識別信号とから半導体素
子2はもとより駆動回路全体の異常内容を判定する手段
である。そして、異常検出信号、識別信号が第1図に簡
便に表示されているが、これらの信号を交流電源電圧と
関係付けて表現すると第4図の如くになる、第4図にお
いて、(a)(b)(c)(d)は異常検出信号、識別
信号の状態によって判断される異常の種類を示してい
る。この異常の種類は第2図のそれと対応している。
Further, the determination circuit 30 is means for determining the content of the abnormality of the entire drive circuit as well as the semiconductor element 2 from the pulse signal from the abnormality detection circuit 10 and the identification signal from the identification signal detection circuit 20. Then, the abnormality detection signal and the identification signal are simply displayed in FIG. 1. When these signals are expressed in relation to the AC power supply voltage, they are as shown in FIG. 4. In FIG. (B), (c), and (d) show types of abnormalities determined based on the states of the abnormality detection signal and the identification signal. The type of this abnormality corresponds to that of FIG.

具体的には、第2図に示す如く、判定する。即ち、
(a)異常検出回路からのパルスが有りで、識別信号検
出回路からのパルスが無い場合は、半導体素子がしゃ断
した故障であると言える。(b)異常検出回路からのパ
ルスが無しで識別信号検出回路からのパルスが有りの場
合は、半導体素子が導通になった故障であると言える。
(c)異常検出回路からのパルスが無しで、識別信号検
出回路からのパルスが無しの場合は、電路が断線した故
障であると言える。(d)異常検出回路からのパルスが
無しで識別信号検出回路からのパルスがある場合は、上
記(b)の故障と言える。更に、異常検出回路からのパ
ルスが無しで識別信号検出回路から異常検出回路を流れ
る電流のローレベル(パルスの山の高さが低いこと)の
パルスが来れば、(c)の電路の断線ではなく、異常検
出回路の不良による故障と言える。
Specifically, the determination is made as shown in FIG. That is,
(A) If there is a pulse from the abnormality detection circuit and there is no pulse from the identification signal detection circuit, it can be said that the semiconductor element has failed. (B) In the case where there is no pulse from the abnormality detection circuit and there is a pulse from the identification signal detection circuit, it can be said that the semiconductor element is a failure in which conduction has occurred.
(C) When there is no pulse from the abnormality detection circuit and there is no pulse from the identification signal detection circuit, it can be said that the failure has occurred in the electric circuit. (D) If there is no pulse from the abnormality detection circuit and there is a pulse from the identification signal detection circuit, it can be said that the above-mentioned failure (b) has occurred. Further, if there is no pulse from the abnormality detection circuit and a low level pulse of the current flowing through the abnormality detection circuit from the identification signal detection circuit (the height of the pulse peak is low), the disconnection of the electric circuit in (c) will occur. Therefore, it can be said that the failure is caused by the failure of the abnormality detection circuit.

しかして、この実施例によれば、半導体素子2と並列
に半導体素子2が遮断状態でパルス信号を発する異常検
出回路10が設けられた構成であるから、フェイルセイフ
となり、対処策を確実かつ迅速にとることができる。つ
まり、プレス機械では、半導体素子2が導通状態に故障
するとクラッチブレーキが切れずにプレスが停止できな
い重大事項となるので、このようにすることにより遮断
状態をパルス信号で確認でき、普通状態の場合にはパル
ス信号が発生されず、すなわち、信号断となるからフェ
イルセイフとなる。したがって、プレス機械のクラッチ
ブレーキ用のソレノイド弁4の駆動回路の高速化を図る
ことができる。
According to this embodiment, since the abnormality detection circuit 10 that generates a pulse signal when the semiconductor element 2 is in the cut-off state is provided in parallel with the semiconductor element 2, it becomes a fail-safe, and a countermeasure can be taken reliably and quickly. Can be taken. In other words, in a press machine, if the semiconductor element 2 breaks down in the conductive state, it becomes a serious matter that the press cannot be stopped without releasing the clutch brake. Does not generate a pulse signal, that is, the signal is cut off, so that fail-safe operation is performed. Therefore, the speed of the drive circuit of the solenoid valve 4 for clutch brake of the press machine can be increased.

また、異常検出回路10に識別信号検出回路20、判定回
路30を設けた構成であるから、半導体素子2の導通状態
や電路3の断線さらには異常検出回路10自体の故障をも
知ることができる。したがって、一層の具体的対処策を
施すことが可能となる。
In addition, since the abnormality detection circuit 10 is provided with the identification signal detection circuit 20 and the determination circuit 30, the conduction state of the semiconductor element 2, the disconnection of the electric circuit 3, and the failure of the abnormality detection circuit 10 itself can be known. . Therefore, more specific measures can be taken.

なお、以上の実施例では、半導体素子2はトライアッ
ク(商品名)とされていたが、第3図に示す如くサイリ
スタ2′、2′でもよい。この実施例においては、第1
図の実施例の半導体素子2、即ち相方向(双方向)半導
体素子を2個の単一方向半導体素子に置き換えている。
上記相方向半導体素子2の場合、片方が故障すると出力
が全波にならず半波になるためその検出が不完全になる
おそれがある。この点を考慮して、本実施例において
は、第1図の実施例の相方向半導体素子を2個の単一方
向半導体素子で置き換えただけで、その他の作用効果は
第1図の実施例と変わらない。
In the above embodiment, the semiconductor element 2 is a triac (trade name), but may be a thyristor 2 ', 2' as shown in FIG. In this embodiment, the first
The semiconductor element 2 of the embodiment shown in the figure, i.e., a phase-directional (bidirectional) semiconductor element, is replaced by two unidirectional semiconductor elements.
In the case of the phase-directional semiconductor element 2, if one of them fails, the output becomes a half-wave instead of a full-wave, so that the detection may be incomplete. In consideration of this point, in the present embodiment, only the phase-directional semiconductor device of the embodiment of FIG. 1 is replaced by two unidirectional semiconductor devices, and the other operation and effects are the same as those of the embodiment of FIG. And does not change.

また、識別信号検出回路20は、変成器21等から構成さ
れたが、ホトカプラ等他の手段で形成してもよい。但
し、変成器とした場合には故障が少ないという利点があ
る。
Further, the identification signal detection circuit 20 includes the transformer 21 and the like, but may be formed by other means such as a photocoupler. However, in the case of a transformer, there is an advantage that the number of failures is small.

[発明の効果] 本発明は、半導体素子が遮断状態のときにパルス信号
を発する異常検出回路を設けかつ識別信号検出回路と判
定回路とを設けた構成であるから、故障内容を具体的に
把握できフェイルセイフに迅速で確実な対処策を施すこ
とができる、とともにプレス機械等を安全かつ高速に運
転できる。
[Effects of the Invention] The present invention has a configuration in which an abnormality detection circuit that emits a pulse signal when a semiconductor element is in a cutoff state is provided, and an identification signal detection circuit and a determination circuit are provided. As a result, quick and reliable countermeasures can be taken for failsafe, and press machines and the like can be operated safely and at high speed.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の一実施例を示す全体構成図、第2図は
同じく動作説明をするための図および第3図は半導体素
子の他の実施例を示す図であり、第4図は異常検出信号
等と交流電源電圧との関係を示す説明図である。 1……交流電源、 2……半導体素子、 3……電路、 4……ソレノイド弁、 10……異常検出回路、 20……識別信号発生回路、 30……判定回路。
FIG. 1 is an overall configuration diagram showing one embodiment of the present invention, FIG. 2 is a diagram for explaining the same operation, FIG. 3 is a diagram showing another embodiment of the semiconductor device, and FIG. FIG. 4 is an explanatory diagram illustrating a relationship between an abnormality detection signal and the like and an AC power supply voltage. 1 AC power supply 2 Semiconductor element 3 Electric circuit 4 Solenoid valve 10 Abnormality detection circuit 20 Identification signal generation circuit 30 Judgment circuit

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】半導体素子を通して印加した交流電源によ
り負荷を駆動する駆動回路において、前記半導体素子に
並列接続され、前記半導体素子が負荷電流をしゃ断する
状態で交流電源に同期したパルス信号を発生するよう形
成された異常検出回路と、前記半導体素子の異常検出回
路を流れる電流と負荷電流を識別する識別信号検出回路
と、該異常検出回路と識別信号検出回路との出力信号か
ら異常内容を判定する判定回路とを備えてなる駆動回路
の異常検出装置。
1. A drive circuit for driving a load by an AC power supply applied through a semiconductor element, wherein the drive circuit is connected in parallel to the semiconductor element and generates a pulse signal synchronized with the AC power supply in a state where the semiconductor element interrupts a load current. An abnormality detection circuit formed as described above, an identification signal detection circuit for identifying a current flowing through the abnormality detection circuit of the semiconductor element and a load current, and determining an abnormality content from output signals of the abnormality detection circuit and the identification signal detection circuit An abnormality detection device for a drive circuit comprising a determination circuit.
JP1011048A 1989-01-20 1989-01-20 Drive circuit abnormality detection device Expired - Fee Related JP2588428B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1011048A JP2588428B2 (en) 1989-01-20 1989-01-20 Drive circuit abnormality detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1011048A JP2588428B2 (en) 1989-01-20 1989-01-20 Drive circuit abnormality detection device

Publications (2)

Publication Number Publication Date
JPH02192316A JPH02192316A (en) 1990-07-30
JP2588428B2 true JP2588428B2 (en) 1997-03-05

Family

ID=11767146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1011048A Expired - Fee Related JP2588428B2 (en) 1989-01-20 1989-01-20 Drive circuit abnormality detection device

Country Status (1)

Country Link
JP (1) JP2588428B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5566240B2 (en) 2010-09-30 2014-08-06 株式会社キトー Failure detection device for drive circuit for electric winding device
EP3674127A1 (en) * 2018-12-28 2020-07-01 Fico Triad, S.A. Method and system for diagnosing the state of a contactor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220018A (en) * 1983-05-25 1984-12-11 富士電機株式会社 Defect detecting circuit of thyristor switch

Also Published As

Publication number Publication date
JPH02192316A (en) 1990-07-30

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