JP2586012B2 - Method of forming tin thin film - Google Patents
Method of forming tin thin filmInfo
- Publication number
- JP2586012B2 JP2586012B2 JP61207534A JP20753486A JP2586012B2 JP 2586012 B2 JP2586012 B2 JP 2586012B2 JP 61207534 A JP61207534 A JP 61207534A JP 20753486 A JP20753486 A JP 20753486A JP 2586012 B2 JP2586012 B2 JP 2586012B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- tin thin
- substrate
- tin
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、錫薄膜の形成方法に関する。更に詳しく
は、基質上に有機錫化合物を用いて錫薄膜を形成させる
方法に関する。The present invention relates to a method for forming a tin thin film. More specifically, the present invention relates to a method for forming a tin thin film on a substrate using an organic tin compound.
基質上に有機錫化合物を用いて錫薄膜を形成させるこ
とが従来から行われており、形成された錫薄膜は、例え
ばテトラメチル錫を用いた場合には10-2Ω・cmオーダー
の低い抵抗率を示すものも得られる。It has been conventionally performed to form a tin thin film using an organic tin compound on a substrate, and the formed tin thin film has a low resistance of the order of 10 -2 Ωcm when using, for example, tetramethyltin. The one that shows the rate is also obtained.
しかるに、従来は有機錫化合物を450℃以上で熱分解
することにより錫または錫酸化物の薄膜を形成させてお
り、このような方法で得られる錫薄膜は膜厚が不均一で
あるばかりではなく、基質としては石英、アルミナ、ス
テンレススチールなどの耐熱性のものしか使用できない
という限界が見られる。However, conventionally, a thin film of tin or tin oxide is formed by thermally decomposing an organotin compound at 450 ° C. or higher, and the tin thin film obtained by such a method has not only a non-uniform film thickness but also However, there is a limit that only heat-resistant substrates such as quartz, alumina, and stainless steel can be used as the substrate.
そこで本発明者は、ピンホールなどの形成が少なく、
平滑な錫薄膜を任意の基質上に形成させ得る方法を求め
て検討を重ねた結果、有機錫化合物のみをプラズマ重合
させることにより、かかる課題が効果的に解決されるこ
とを見出した。Therefore, the present inventor has less formation of pinholes and the like,
As a result of repeated investigations for a method capable of forming a smooth tin thin film on an arbitrary substrate, it has been found that such a problem can be effectively solved by plasma-polymerizing only an organic tin compound.
従って、本発明は錫薄膜の形成方法に係り、錫薄膜の
形成は、基質上に有機錫化合物のみのプラズマ重合膜を
形成させることにより行われる。Therefore, the present invention relates to a method for forming a tin thin film, and the tin thin film is formed by forming a plasma polymerized film of only an organic tin compound on a substrate.
基質としては、前述の如き耐熱性基質以外に、ガラス
などの無機材料あるいはアクリル樹脂、フェノール樹
脂、ポリカーボネート樹脂などの有機材料がプレート
状、シート状などの形で用いられる。As the substrate, an inorganic material such as glass or an organic material such as an acrylic resin, a phenol resin or a polycarbonate resin is used in the form of a plate or a sheet in addition to the heat-resistant substrate as described above.
プラズマ重合は、有機錫化合物としてテトラメチル
錫、テトラエチル錫、テトラ−ｎ−ブチル錫、ジブチル
錫アセテートなどを用い、例えば第１図に示されるよう
な装置を用いて行われる。Plasma polymerization is carried out using an organic tin compound such as tetramethyltin, tetraethyltin, tetra-n-butyltin, dibutyltin acetate, or the like, for example, using an apparatus as shown in FIG.
まず、プラズマ反応容器１内を油回転ポンプ２に連結
されている分子ターボポンプ３の作動により10-5Torrの
オーダーに減圧する。減圧された反応容器内に、バルブ
４を調節することにより設定される任意の流量を流量計
５で計測しながら、有機錫化合物のみを10-2Torrのオー
ダー迄導入し、高周波電源６からマッチングボックス７
を介して高周波（13.56MHz）を印加し、放電を起させ
る。この際、マッチングボックスを調節することによ
り、反射電力をできる丈抑えて、印加電力と反射電力と
の差が任意の電力になるようにする。一定時間放電した
ら、高周波の印加および有機錫化合物の供給を中止し、
メインバルブ（図示せず）を閉じ、反応容器をリークし
て、内部電極８上に搭載した基質９の表面にプラズマ重
合膜として錫薄膜（約70元素％以上の割合でSnを含み、
他にＣ、０を含んでいる）を形成させたものを取り出
す。First, the pressure inside the plasma reaction vessel 1 is reduced to the order of 10 -5 Torr by the operation of the molecular turbo pump 3 connected to the oil rotary pump 2. While measuring an arbitrary flow rate set by adjusting the valve 4 with the flow meter 5 into the depressurized reaction vessel, only the organotin compound is introduced to the order of 10 -2 Torr, and matching is performed from the high frequency power supply 6. Box 7
A high frequency (13.56 MHz) is applied through to generate a discharge. At this time, by adjusting the matching box, the height of the reflected power is suppressed so that the difference between the applied power and the reflected power becomes an arbitrary power. After discharging for a certain time, the application of high frequency and the supply of the organotin compound are stopped,
The main valve (not shown) is closed, the reaction vessel is leaked, and a tin thin film (containing Sn at a ratio of about 70 element% or more, as a plasma polymerized film) is formed on the surface of the substrate 9 mounted on the internal electrode 8.
(Including C and 0) is taken out.
このプラズマ重合の際に印加される高周波電力を制御
することにより、高抵抗率から低抵抗率迄の幅広い抵抗
率を有する薄膜を形成させることができる。また、形成
される錫薄膜の外観は、高周波電力が40W迄は透明であ
るが、60W以上では金属光沢を示すものが得られるよう
になり、これは電力密度で表わすと0.34W/cm2以上とい
うことになる。By controlling the high-frequency power applied during the plasma polymerization, a thin film having a wide range of resistivity from high resistivity to low resistivity can be formed. In addition, the appearance of the formed tin thin film is transparent up to high-frequency power of 40 W, but at 60 W or higher, a metallic luster can be obtained, which is expressed as power density of 0.34 W / cm 2 or more. It turns out that.
本発明方法により形成される錫薄膜は、印加する高周
波電力を調節することにより、任意の抵抗率を有する膜
として得られる。また、一般に室温で行われる低温プラ
ズマ重合法により作製されるので、任意の基質を用い、
その基質に熱損傷を与えることなく、ピンホールの少な
い平滑な膜を形成させる。従って、本発明方法は、IC回
路の作製やプラスチックの導電化などに有効に利用する
ことができる。The tin thin film formed by the method of the present invention can be obtained as a film having an arbitrary resistivity by adjusting the applied high frequency power. In addition, since it is produced by a low-temperature plasma polymerization method generally performed at room temperature, using an arbitrary substrate,
A smooth film with few pinholes is formed without causing thermal damage to the substrate. Therefore, the method of the present invention can be effectively used for producing an IC circuit, making a plastic conductive, and the like.
次に、実施例について本発明を説明する。 Next, the present invention will be described with reference to examples.
実施例 第１図に示されるようなプラズマ反応装置を用い、テ
トラメチル錫流量250SCCM、放電圧力0.08Torr、高周波
電力40〜300Wの条件下でプラズマ重合を行なった。この
ときの基質（ガラスプレート基板）温度は30℃であり、
高周波による温度上昇は見られなかった。Example Using a plasma reaction apparatus as shown in FIG. 1, plasma polymerization was carried out under the conditions of a tetramethyltin flow rate of 250 SCCM, a discharge pressure of 0.08 Torr, and a high frequency power of 40 to 300 W. At this time, the substrate (glass plate substrate) temperature was 30 ° C,
No temperature rise due to high frequency was observed.
形成された錫薄膜の抵抗率を測定すると、第２図のグ
ラフに示されるような結果が得られた。即ち、高周波電
力150W程度迄は急激な抵抗率の低下がみられ、200W以上
では一定の値を示している。また、膜の外観は、60W
（電力密度0.34W/cm2）以上で金属光沢を示している。When the resistivity of the formed tin thin film was measured, the result as shown in the graph of FIG. 2 was obtained. That is, the resistivity sharply decreases up to about 150 W of high-frequency power, and shows a constant value at 200 W or more. The appearance of the film is 60W
(Power density of 0.34 W / cm 2 ) or more shows metallic luster.
第１図は、本発明方法で用いられるプラズマ重合装置の
概略図である。また、第２図は、実施例で得られた錫薄
膜のプラズマ重合時の高周波電力と抵抗率との関係を示
すグラフである。 （符号の説明） １……プラズマ反応容器 ６……高周波電源 ７……マッチングボックス ８……内部電極 ９……基質FIG. 1 is a schematic view of a plasma polymerization apparatus used in the method of the present invention. FIG. 2 is a graph showing the relationship between high-frequency power and resistivity during plasma polymerization of the tin thin film obtained in the example. (Explanation of reference numerals) 1 ... Plasma reaction vessel 6 ... High frequency power supply 7 ... Matching box 8 ... Internal electrode 9 ... Substrate
Claims (2)
膜を形成させることを特徴とする錫薄膜の形成方法。1. A method for forming a tin thin film, comprising forming a plasma polymerized film of only an organic tin compound on a substrate.
2以上の高周波電力によって行われる特許請求の範囲第
１項記載の錫薄膜の形成方法。2. A plasma polymerized film is formed at a power density of 0.34 W / cm.
2. The method for forming a tin thin film according to claim 1, wherein the method is performed by using two or more high-frequency powers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61207534A JP2586012B2 (en) | 1986-09-02 | 1986-09-02 | Method of forming tin thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61207534A JP2586012B2 (en) | 1986-09-02 | 1986-09-02 | Method of forming tin thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6362877A JPS6362877A (en) | 1988-03-19 |
| JP2586012B2 true JP2586012B2 (en) | 1997-02-26 |
Family
ID=16541318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61207534A Expired - Lifetime JP2586012B2 (en) | 1986-09-02 | 1986-09-02 | Method of forming tin thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2586012B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61203136A (en) * | 1985-03-05 | 1986-09-09 | Kanebo Ltd | Formation of transparent electroconductive film |
| JPS61203137A (en) * | 1985-03-06 | 1986-09-09 | Kanebo Ltd | Electrically conductive film having rectifying action |
| JPS62116772A (en) * | 1985-11-15 | 1987-05-28 | Ricoh Co Ltd | Electrically conductive transparent film |
-
1986
- 1986-09-02 JP JP61207534A patent/JP2586012B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6362877A (en) | 1988-03-19 |
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