JP2582487C - - Google Patents
Info
- Publication number
- JP2582487C JP2582487C JP2582487C JP 2582487 C JP2582487 C JP 2582487C JP 2582487 C JP2582487 C JP 2582487C
- Authority
- JP
- Japan
- Prior art keywords
- sector
- memory block
- memory
- block
- sectors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 198
- 238000012545 processing Methods 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 230000004044 response Effects 0.000 claims description 3
- 230000008030 elimination Effects 0.000 claims 2
- 238000003379 elimination reaction Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Family
ID=
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2582487B2 (ja) | 半導体メモリを用いた外部記憶システム及びその制御方法 | |
| US11868618B2 (en) | Data reading and writing processing from and to a semiconductor memory and a memory of a host device by using first and second interface circuits | |
| US20070130442A1 (en) | Apparatus and Methods Using Invalidity Indicators for Buffered Memory | |
| KR100771519B1 (ko) | 플래시 메모리를 포함한 메모리 시스템 및 그것의 머지방법 | |
| JP2856621B2 (ja) | 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置 | |
| US9164887B2 (en) | Power-failure recovery device and method for flash memory | |
| US7529879B2 (en) | Incremental merge methods and memory systems using the same | |
| JPH06111588A (ja) | 一括消去型不揮発性メモリ | |
| TWI668573B (zh) | 用於在突然斷電時降低功率消耗之資料儲存方法和資料儲存設備 | |
| CN113243007B (zh) | 存储级存储器访问 | |
| EP1632858B1 (de) | Halbleiterspeicheranordnung und Zugriffsverfahren und Speichersteuerungssystem dafür | |
| JP2005115910A (ja) | シリアルフラッシュメモリにおけるxipのための優先順位に基づくフラッシュメモリ制御装置及びこれを用いたメモリ管理方法、これによるフラッシュメモリチップ | |
| JP2004139503A (ja) | 記憶装置及びその制御方法 | |
| CN101246429B (zh) | 将闪存模块用作主存储器的电子系统和相关系统引导方法 | |
| JP3421581B2 (ja) | 不揮発性半導体メモリを用いた記憶装置 | |
| JP2582487C (de) | ||
| CN100533364C (zh) | 广义闪存及其方法 |