JP2579490Y2 - Snubber module for semiconductor device - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a snubber module for a semiconductor device such as an IGBT in which a diode chip and a capacitor are connected in series.

[0002]

2. Description of the Related Art IGBTs have relatively low driving power,
Since switching power can be increased, it is widely used for motor control and the like. However, when handling a large power and a voltage having a fast rising speed, a snubber module for a semiconductor device is required to protect the device.

FIGS. 2A, 2B and 2C are diagrams for explaining a circuit using such a snubber module for a semiconductor device.

In FIG. 2A, a diode chip 1 is shown.
A first lead electrode 4 serving as a diode chip-side lead electrode and a second lead electrode 5 serving as a capacitor-side lead electrode of a semiconductor device snubber module 3 in which a series connection circuit of a capacitor 2 and a capacitor are sealed with resin. It is connected between serially connected semiconductor elements, for example, IGBTs 6 and 6 '. Further, a resistor 7 for discharging the accumulated charge of the capacitor 2 is a first extraction electrode 4 of the snubber module 3 for a semiconductor element and an intermediate electrode extracted from a connection point between the diode chip 1 and the capacitor 2. 3 are connected between the extraction electrodes 8. 9, 9 'is IGB
These diodes are connected in anti-parallel between the collector and the emitter of T6, 6 '.

In FIG. 2B, a diode chip 1 is shown.
Module for sealing a semiconductor element, in which a series connection circuit of a capacitor and a capacitor 2 is sealed with resin, and a snubber module for a semiconductor element, in which a series connection circuit of a diode chip 1 ′ and a capacitor 2 ′ is sealed with a resin. Are connected in series, and the IGBTs 6 and 6 'are connected in series. The first extraction electrode 4 of the semiconductor element snubber module 3 is connected to the collector of the IGBT 6, and the second extraction electrode 5 of the semiconductor element snubber module 3 and the first extraction electrode 4 'of the semiconductor element snubber module 3'. The connection point is a connection point between the IGBTs 6 and 6 ', and the second lead electrode 5' of the snubber module 3 'for the semiconductor element is connected to the IGBT.
6 'are connected to the respective emitters. Further, the resistor 7 for discharging the accumulated charge of the capacitor 2 is connected to the first lead electrode 4 of the snubber module 3 for a semiconductor element.
A resistor 7 ′ for discharging the electric charge stored in the capacitor 2 ′ is provided between the first extraction electrode 4 ′ and the third extraction electrode 8 ′ of the snubber module 3 ′ for the semiconductor element. It is connected between each.

In FIG. 2C, a diode chip 1
Module for sealing a semiconductor element, in which a series connection circuit of a capacitor and a capacitor 2 is sealed with resin, and a snubber module for a semiconductor element, in which a series connection circuit of a diode chip 1 ′ and a capacitor 2 ′ is sealed with a resin. Are connected in series, and the IGBTs 6 and 6 'are connected in series. The second extraction electrode 5 of the semiconductor element snubber module 3 is connected to the collector of the IGBT 6, and the first extraction electrode 4 of the semiconductor element snubber module 3 and the first extraction electrode 4 'of the semiconductor element snubber module 3'. The connection point is a connection point between the IGBTs 6 and 6 ', and the second lead electrode 5' of the snubber module 3 'for the semiconductor element is connected to the IGBT.
6 'are connected to the respective emitters. A resistor 7 for discharging the accumulated charge of the capacitor 2 is provided with a third lead electrode 8 of the snubber module 3 for a semiconductor device.
A resistor 7 ′ for discharging the electric charge stored in the capacitor 2 ′ is provided between the semiconductor device snubber module 3 ′ and the second lead electrode 5 ′ of the semiconductor device snubber module 3 ′.
Are connected between the second extraction electrode 5 and the third extraction electrode 8 'of the semiconductor element snubber module 3'.

[0007]

However, in such a conventional snubber module for a semiconductor device, after the diode chip 1 and the capacitor 2 are connected, the whole is housed in a single case, and Because of the sealing structure, there were the following disadvantages. (1) Since the temperature of the diode chip is higher than that of the capacitor, heat is transmitted from the diode chip to the capacitor via the resin, but the capacitor may be broken because the heat resistance of the capacitor is low. (2) When the diode chip is changed or the capacitance of the capacitor is changed, the entire snubber module for a semiconductor element must be replaced, which is uneconomical.

[0008]

According to a first aspect of the present invention, there is provided a snubber module for a semiconductor device in which a diode chip and a capacitor are connected in series. A fixed first lead electrode, a first metal conductor connected to the other end of the diode chip, a second lead electrode, and a second metal conductor connected to the second lead electrode. A diode portion entirely sealed with resin except for the first and second extraction electrodes and a part of the first and second metal conductors, and a third extraction terminal connected to one end of the capacitor An electrode, a third metal conductor, and a fourth metal conductor connected to the other end of the capacitor, and a resin except for the third extraction electrode and a part of the third and fourth metal conductors. Sealed with A snubber module for a semiconductor element, comprising a capacitor portion, wherein the first metal conductor and the third metal conductor, and the second metal conductor and the fourth metal conductor are connected to each other. Is what you do.

According to a second aspect of the present invention, in order to solve the above-mentioned problem, a plate having a metal surface on the upper surface and an insulating surface on the lower surface is placed on the first lead electrode, and the plate is placed on the upper surface of the plate. 2. The semiconductor according to claim 1, wherein the first metal conductor is placed and fixed, and a bridge plate connects between the upper surface of the plate and the other end of the diode chip. A snubber module for an element is provided.

According to a third aspect of the present invention, in order to solve the above-mentioned problems, the first metal conductor and the third metal conductor, and the second metal conductor and the fourth metal conductor are screwed, respectively. The snubber module for a semiconductor device according to claim 1 or 2, wherein the snubber module is connected by:

[0011]

FIG. 1 is a diagram for explaining an embodiment of the present invention. In the figure, 1 is a diode chip, 2 is a capacitor, 4 is a first extraction electrode, 5 is a second extraction electrode, 8 is a third extraction electrode, 10 is a first metal conductor, and 11 is a second extraction electrode. A metal conductor, 12 is a resin, 13 is a diode portion, 14 is a third metal conductor, 15 is a fourth metal conductor, 16 is a capacitor portion, 17 is a metal surface on one side and an insulating surface on the other side. Plates, for example a ceramic plate which has been treated to be a metal surface on one side, bridges between the conductors and connects them without contacting the other parts, i.e. bridging between the conductors The bridge plate 19 is a screw.

In FIG. 1, a diode chip 1 and a ceramic plate 17 are placed and fixed on a first extraction electrode 4 at a certain interval with the metal surface facing upward. . A bridging plate 18 is placed and fixed between the diode chip 1 and the metal surface which is the upper surface of the ceramic plate 17 so as to bridge the two. The first metal conductor 10 is placed and fixed on the metal surface, which is the upper surface of the ceramic plate 17. The second extraction electrode 5 and the second metal conductor 11 are formed integrally. Then, after the RTV rubber is applied to the diode chip 1 and protected, the first extraction electrode 4, the second extraction electrode 5, the first metal conductor 10, and a part of the second metal conductor 11 are separated. Except for the above, the whole is sealed with the resin 12 to form the diode portion 13.

A third lead electrode 8 and a third metal conductor 14 formed integrally are connected to one end of the capacitor 2, and a fourth metal conductor 15 is connected to the other end of the capacitor 2. Connected. Except for a part of the third lead electrode 8, the third metal conductor 14, and the fourth metal conductor 15, the whole is sealed with the resin 12, and the capacitor part 1 is formed.
6 are formed.

First metal conductor 10 and third metal conductor 1
4. By connecting the second metal conductor 11 and the fourth metal conductor 15 with the screws 19 respectively, a snubber module for a semiconductor element is formed.

[0015]

As described above, according to the present invention, the following effects can be obtained. (1) Since the surface area of the resin sealing the diode chip and the capacitor is increased, the heat dissipation of both the diode chip and the capacitor is improved. (2) In the path in which the heat generated in the diode chip is transmitted to the capacitor, heat is not transmitted through the resin, so that the heat generated in the diode chip is not easily transmitted to the capacitor. (3) By (1) and (2), destruction of the capacitor due to heat is prevented. (4) When it is necessary to replace one of the diode and the capacitor, it is economical because it is only necessary to replace only the one that needs to be replaced, instead of replacing the entire snubber module for a semiconductor element.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining an embodiment of the present invention.

FIG. 2 is a view for explaining a conventional example of a snubber module for a semiconductor element.

[Explanation of symbols]

1, 1 ': Diode chip 2, 2': Capacitor 3, 3 ': Snubber module for semiconductor element 4, 4': First extraction electrode 5, 5 ': Second
, IGBT 7, 7 '... resistor 8, 8' ... third lead electrode 9, 9 '... diode 10 ... first metal conductor 11 ... second metal conductor 12 ... resin 13 ... Diode part 14 ... Third metal conductor 15 ... Fourth metal conductor 16 ... Capacitor part 17 ... Ceramic plate 18 ... Bridge plate 19 ... Screw

Claims (3)

(57) [Scope of request for utility model registration] 1. A snubber module for a semiconductor device comprising a diode chip and a capacitor connected in series, a first lead electrode to which one end of the diode chip is fixed, and a second lead electrode connected to the other end of the diode chip. A first metal conductor, a second extraction electrode, and a second metal conductor connected to the second extraction electrode, wherein the first and second extraction electrodes and the first and second metal conductors are provided. A diode portion entirely sealed with a resin except for a part of the capacitor, a third lead electrode and a third metal conductor connected to one end of the capacitor, and a fourth portion connected to the other end of the capacitor. And a capacitor portion entirely sealed with resin except for the third extraction electrode and a part of the third and fourth metal conductors. Metal conductor Snubber module semiconductor device characterized by the aforementioned second metallic conductor and the fourth metal conductor is connected. 2. A plate whose upper surface is a metal surface and whose lower surface is an insulating surface is mounted on the first extraction electrode, and the first metal conductor is mounted and fixed on the upper surface of the plate. The snubber module for a semiconductor device according to claim 1, wherein an upper surface of the plate and the other end of the diode chip are bridged by a bridge plate. 3. The first metal conductor and the third metal conductor,
3. The snubber module for a semiconductor element according to claim 1, wherein the second metal conductor and the fourth metal conductor are connected by screws.