JP2575829B2 - Crystal orientation determination device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Purpose of the Invention] (Industrial application field) The present invention relates to a crystal orientation determination device using X-rays, and attaches a crystal orientation measurement device to a slicing machine to determine a required orientation. The present invention relates to a crystal orientation determining apparatus which determines an external surface and has a capability of cutting along the surface.

(Prior art) The measurement principle of the crystal orientation measuring apparatus is based on the X-ray diffraction method, which comprises an X-ray generator and an X-ray detector, and sets the angle by matching each diffraction angle (θ) to a known crystal in advance. Keep it. For example, in the case of a crystal of the Si (111) plane, if it is a CuKα ray, 2
Since θ = 28.44 °, each is set to 2θ / 2 = 14.22 ° (θ).

When this measurement principle is applied, a crystal test section cut with a cutting cutter of a slicing machine is used as a measurement reference, and a crystal orientation measuring device for this plane is: Was set at a right angle to the perpendicular, and the crystal test section was tilted on this plane, the maximum value of the diffraction peak was obtained, the plane orientation was determined, and cutting was performed.

However, in recent years, as electronic materials, not only Si but also compound semiconductors (GaAs, GaP, etc.) have been used as new functional devices.
Further, there has been a strong demand for a cut wafer whose plane orientation is determined with high accuracy.

In other words, it is necessary not only to give a tilt to the crystal plane and determine the plane orientation in one direction and cut, but also to locate the plane orientation perpendicular to this plane.

However, in response to this requirement, the crystal is once cut with a slicing machine, and then cut again so that it is parallel to this test section, and the wafer is turned into a wafer. Attach it to the X-ray diffractometer, measure the angle error with respect to the diffraction angle of the known standard sample in advance, then rotate the test piece by 90 °, measure the angle error as above, The angle was corrected by fine adjustment knobs corresponding to each of the reading and slicing machines to cut the crystal.

(Problems to be Solved by the Invention) For this reason, there are the following drawbacks.

(1) The determination of the plane orientation in one direction alone cannot meet the demand for a high-quality wafer.

(2) In order to determine the plane orientation in two directions with high accuracy using a separately installed X-ray diffractometer, it is necessary to cut the crystal twice or more, which deteriorates the material yield.

(3) Angle correction is performed by a slicing machine on the results of two-direction measurement using the X-ray diffractometer. Diffraction angle reading errors and correction angle setting errors during that time are included to obtain a desired plane orientation. Have difficulty.

(4) The work efficiency of determining the plane orientation in two directions using the X-ray diffractometer and cutting with a slicing machine is poor.

The present invention has been made in view of such circumstances,
The aim is to attach a crystal orientation measuring device with a built-in thick X-ray optical system to the slicing machine so that it can rotate freely, and determine the plane orientation at right angles only by tilting the crystal in the head of the slicing machine. It is therefore an object of the present invention to provide a crystal orientation determining apparatus capable of improving work efficiency and easily responding to a demand for a high-quality wafer.

[Configuration of the invention]

(Means for Solving the Problems) According to the present invention, a rotation support plate is attached to a lower part of a crystal orientation measuring device main body provided with an X-ray generator and an X-ray detector, and the rotation support plate is set together with a slicing machine. After determining the plane orientation in one direction, the crystal orientation measurement device on the rotating support plate is almost
By rotating by 90 °, it is possible to determine a plane direction orthogonal to the above-described plane direction.

(Operation) With this configuration, it is possible to determine the plane orientation in two directions with high accuracy while directly irradiating the test section of the crystal to be measured fixed to the head of the slicing machine with X-rays.

Also, since the test cutting of the crystal to be measured only needs to be performed once, the material yield and work efficiency can be greatly improved.

Further, since the crystal orientation determining device main body can be removed from the slicing machine, it can be diverted to another slicing machine after the measurement, and the equipment can be effectively used.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 shows a crystal plane orientation determining apparatus according to an embodiment of the present invention.
It is the top view and front view which show the state attached to the slicing machine.

In FIG. 1, reference numeral 1 denotes a slicing machine. The slicing machine 1 is provided with a head 2 which can freely move up and down and rotate, and a crystal 3 which is a work is attached to the head 2. On the other hand, on the frame 1a of the slicing machine 1, an annular cutting cutter 4 for cutting the crystal 3 and a crystal orientation determining device 10 are mounted at a position shifted from the cutting cutter 4 by 90 ° on a plane. When cutting with the cutting cutter 4, the head 2 is moved while moving to the left in FIG.

The crystal orientation determining apparatus 10 includes an X-ray generator 11 and an X-ray detector 12, a crystal orientation measuring apparatus main body 14 provided with a lock pin 13 for locking positions in two orthogonal directions, and a second
As shown in detail in FIG. 3 and FIG. 3, the crystal orientation measurement device main body 14 is disposed at a lower portion of the crystal orientation measurement device main body 14 and rotatably supported via a shaft 15.
The rotation support base 16 is provided with holes 16a and 16b into which holes are inserted. Here, the lock pin 13 is inserted into the holes 16a and 16b of the rotation support base 16 at a predetermined position by a spring (not shown), and is lifted up to unlock the rotation support base 16 when rotating the crystal orientation measuring device main body 14. I do.

On the other hand, the slicing machine 1 is provided with a guide plate 17 for setting the crystal orientation determining device 10 at a predetermined position. The guide plate 17 protrudes from one end and guides when setting by sliding the crystal orientation determining device 10, and a direction perpendicular to the setting guide 18 at the end of the setting guide 18. To determine the crystal orientation
A stopper 19a for positioning when the wafer 10 is woried to a predetermined position, protrudes in a direction perpendicular to the stopper 19a, and moves the crystal orientation determination device 10 to 90 degrees as shown by an arrow in FIG.
ス ト ッ パ A stopper 19b for positioning when rotated is provided.

The thickness of the rotation support base 16 is larger than the height of the setting guide 18 of the guide plate 17 and the heights of the stoppers 19a and 19b, so that the lower surface of the crystal orientation measuring device main body 14 does not contact when rotating the crystal orientation measuring device main body 14. To do.

Next, the operation of the crystal orientation determining apparatus 10 configured as described above will be described. It is assumed that the guide plate 17 described above is attached to the frame 1a of the slicing machine 1.

The crystal 3 attached and fixed to the head 2 of the slicing machine 1 is lowered together with the head 2 and cut by the cutting cutter 4. Thereafter, the head 2 is raised and rotated by 90 ° (indicated by an arrow in FIG. 1). Next, the crystal orientation measuring device body 14 is
Setting guide 18 under the crystal cutting surface 3a together with the rotation support base 16
As a guide, slide it down to the stopper 19a and push it in. When the lock pin 13 is pushed until it hits the stopper 19a, the lock pin 13 is inserted into the hole 16a of the rotation support base 16 to lock this position. Thereafter, the head 2 to which the crystal 3 is attached and fixed
To the X-ray diffraction position. In this state, the X-ray generator 11 irradiates X-rays to the crystal test section 3a. By operating the X-direction fine adjustment knob 20 of the slicing machine 1 while irradiating, the crystal 3 is tilted and the X-ray diffraction intensity is measured by the X-ray detector 12.
The X direction fine adjustment knob 20 is locked by finding the plane direction of the maximum intensity position. Thereafter, at this position, the crystal orientation measuring device body 14 is
As shown by the arrow in FIG.
Rotate 90 ゜. In this state, the crystal test section 3a is again irradiated with X-rays, and the Y-direction fine adjustment knob 21 of the slicing machine 1 is used.
Is operated to determine the plane orientation of the maximum position of the in-line X-ray diffraction intensity, lock the Y-direction fine adjustment knob 21 and turn off the X-ray. This determines the crystal cutting plane.

Therefore, the head 2 is raised while maintaining the tilt angles in the two directions (X direction and Y direction), and is rotated 90 ° in the opposite direction,
Return to the position of the cutting cutter 4. Thereafter, the head 2 is lowered and the crystal 3 is cut by the cutting cutter 4 to a desired thickness thereafter.

The above operation will be described in comparison with the conventional operation. Conventionally, as shown in FIG.
The wafer 22 removed from is measured in the X-direction with reference to the orientation flat surface 23, the Y-direction is further measured, and a slicing machine is adjusted based on the measured values. In the present invention, as shown in FIG. 5, the crystal orientation of the unmeasured crystal plane 2 is first measured while the crystal is fixed to the head, and thereafter the crystal orientation measurement is performed. Turn the main body of the device 90 °
Since the plane orientation is measured, the plane orientation 25 can be determined without removing the crystal.

The crystal orientation measuring device main body 14 is
The slicing machine 1 can be removed from the slicing machine 1, and the slicing machine 1 can be set to another slicing machine 1 if necessary. Further, the setting of the rotation angle of the crystal orientation measurement device main body 14 on the rotation support base 16 is performed by setting the crystal orientation measurement device main body 14 to a hole provided in advance on the rotation support base 16 without depending on the stoppers 19a and 19b. The structure may be set, or may be a clamp structure in which the crystal orientation measuring device main body 14 can be turned with respect to the rotation support base 16 and fixed at an arbitrary angular position. In addition, stopper
19b may be provided at a position indicated by 19c in FIG.

〔The invention's effect〕

Therefore, according to the present invention, only by tilting the sample (crystal) to be measured in the head of the slicing machine,
Compared to conventional plane orientation determination, orthogonal plane orientation can be determined without having to consider reading errors, correction errors, correction setting errors, etc., making it easier to provide high-quality wafers that have become increasingly demanded in recent years. Can be handled.

In addition, since the crystal is cut only once in the measurement, it is possible to simultaneously improve the yield of expensive materials and the work efficiency due to the shortened work time.

Further, there is an advantage that a single machine can handle a plurality of slicing machines.

[Brief description of the drawings]

1A and 1B show a state in which one embodiment of the present invention is mounted on a slicing machine. FIG. 1A is a plan view, FIG. 1B is a front view, FIG. FIG. 4 is a plan view of one embodiment of the present invention, FIGS. 4 (a) and 4 (b) are explanatory views showing steps of measuring the plane orientation in both X and Y directions using a conventional test wafer, and FIG. FIG. 4 is an explanatory view showing steps of measuring the plane orientation in both the X and Y directions of the present invention. DESCRIPTION OF SYMBOLS 1 ... Slicing machine, 2 ... Head 3 ... Crystal, 3a ... Crystal test section 11 ... X-ray generator, 12 ... X-ray detector 14 ... Crystal orientation measuring device main body 16 ... Rotation support base

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-242845 (JP, A) JP-A-52-127156 (JP, A)

Claims (1)

(57) [Claims] 1. A crystal orientation determination device mounted on a slicing machine and determining orientations of crystal test sections in two directions, comprising: a crystal orientation measurement device main body provided with an X-ray optical system; and a crystal orientation measurement device main body. A crystal orientation determining apparatus comprising a support plate capable of rotating in two orthogonal directions.