JP2567005B2 - Wafer edge exposure device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> In recent years, positive resists are often used, but in this case, before (or after) the required pattern exposure, BACKGROUND ART Exposure is applied to the peripheral portion of a wafer to remove the resist on the peripheral portion of the wafer.

According to the present invention, in a semiconductor wafer, a ceramics wafer or the like having a peripheral portion composed of an arc portion and a linear portion, the peripheral portion of the wafer is exposed by exposing the peripheral resist of the resist applied to the surface of the wafer. For a device for doing.

In this specification, the peripheral portion refers to a region having a certain width from the outer edge of the wafer toward the center of the wafer.

<Prior Art> Since the peripheral portion of the wafer is composed of an arc portion and a straight portion, the light irradiation means is installed at a position at a required distance from the center of the wafer, and the peripheral portion exposure apparatus that rotates the wafer is irradiated with the irradiation portion. The light coincides with the peripheral edge to be irradiated on the surface of the arc portion, but in the straight portion, since the irradiation position from the wafer center is shorter than the arc portion, the rotation of the wafer causes the straight portion to reach the irradiation position. When the irradiation light passes through the outside of the straight portion without irradiating the peripheral surface of the straight portion, the surface of the straight portion cannot be exposed, or even if it can be exposed by some light, the straight portion is exposed. The exposure width of is extremely narrower than the exposure width of the arc portion.

Therefore, conventionally, a means for mechanically or optically detecting the linear portion is provided, and when the linear portion is detected, the light irradiation means is arranged so that the irradiation position moves from the arc portion along the linear portion. A light irradiation position changing mechanism for controlling is provided so that the exposure width of the straight line portion is substantially equal to the exposure width of the arc portion.

In addition, in Japanese Patent Laid-Open No. 60-60724 (in the title of "Semiconductor exposure apparatus", after the centering of the wafer and the position detection of the outer peripheral straight line portion are detected, the wafer is moved with respect to the fixed light irradiation means. There is disclosed an apparatus for exposing a peripheral portion by performing the above.

<Problems to be Solved by the Invention> However, the structure is complicated due to the linear part detecting means and the light irradiation position changing mechanism, and the arcuate part exposure state is switched to the linear part exposure state and vice versa. There was a problem that the timing control of was difficult and the control system was complicated.

The present invention has been made in view of the above circumstances, and avoids complication of the structure and control, only rotating the wafer on both the straight line portion and the arc portion without detecting the straight line portion. It is an object of the present invention to provide an apparatus that can be exposed by.

<Means for Solving Problems> A wafer edge exposure apparatus according to the first aspect of the present invention includes a wafer rotating mechanism that mounts and rotates a wafer, and a wafer rotating mechanism that is placed on the front surface side of the wafer placed on the wafer rotating mechanism. Is arranged on the back side of the wafer, and the irradiation light is blocked by the arc portion, and the light irradiation means for exposing the surface of the arc portion of the wafer is irradiated to the straight portion of the wafer. A linear part exposure light irradiating means for irradiating light in a direction passing from the outside to the surface side, and a light passing through from the outside of the linear part to the surface side, which is arranged on the surface side of the wafer. And a reflecting member that reflects toward the surface of the.

A wafer edge exposure apparatus according to the second aspect of the present invention is provided with a wafer rotating mechanism similar to that described above, and is arranged on the back surface side of the wafer mounted on the wafer rotating mechanism, and a part of the irradiation light is the arc portion. Light irradiation means for irradiating light in the direction of passing from the outside of the arc portion to the front surface side while being blocked by the light irradiation means, and arranged on the front surface side of the wafer and passing from the outside of the arc portion to the front surface side. And a reflecting member that reflects light toward the surface of the arc portion and reflects light that has passed from the outside of the straight portion toward the front surface toward the surface of the straight portion.

The wafer edge exposure apparatus according to the third aspect of the present invention is the same as the above-described wafer rotating mechanism, and is arranged above the arc portion on the front surface side of the wafer mounted on the wafer rotating mechanism. And a light irradiating means for irradiating the surface of the wafer with the light irradiating means on the back surface side of the wafer, the light irradiating means being disposed below the light irradiating portion of the light irradiating means. A first reflecting member that reflects the light from the light irradiating means that has passed through to the front surface side from the outside of the linear portion, and the light reflected from the first reflecting member that is disposed on the front surface side of the wafer. A second reflecting member that reflects the light toward the surface of the straight line portion.

<Operation> According to the first invention, when the arc portion of the wafer rotated by the wafer rotating mechanism passes through the light irradiation portion of the light irradiation means for arc portion exposure, the light irradiation means
The surface of the arc portion is directly exposed.

When the arc portion of the wafer passes through the light irradiating portion of the light irradiating means for exposing the linear portion, since the light irradiating means is arranged on the back surface of the wafer, the irradiation light from it is blocked by the back surface of the arc portion. To be done. Then, when the straight line portion is passing through the light irradiating portion in the light irradiating means for linear portion exposure, the light that can pass through the outside of the straight line portion of the irradiation light from the light irradiating means for linear portion exposure is the surface. To the side,
Moreover, the surface of the linear portion is exposed by being reflected by the reflecting member.

According to the second aspect of the invention, when the circular arc portion is passing through the light irradiating portion of the light irradiating means, the light that has passed from the outside of the circular arc portion to the front surface side of the irradiation light is reflected by the reflecting member to be reflected by the circular arc portion. When the straight part is exposed through the light irradiation part, the light that has passed outside the straight part out of the light blocked by the back surface of the arc part when passing through the arc part is reflected by the reflecting member and straightened. Expose the area.

In this case, a part of the irradiation light always passes through the outside of the arc even when passing through the arc portion, and the rest of the irradiation light passes when passing through the straight portion.

According to the third aspect of the invention, when the arcuate portion is passing under the light emitting portion of the light emitting means, the irradiation light from the light emitting means directly exposes the arcuate portion. When the straight line portion is passing under the light radiating portion in the light radiating means, the radiated light enters the first reflecting member from the outside of the straight line portion and is reflected there, and outside the straight line portion of the reflected light. The light from the front side to the front side is further reflected by the second reflecting member to expose the surface of the linear portion.

<Example> Hereinafter, an example of each invention will be described in detail with reference to the drawings.

Embodiment 1 of First Invention FIG. 6 is a schematic configuration diagram of a wafer peripheral edge exposure apparatus.

In FIG. 6, reference numeral 1 denotes a transfer mechanism for transferring the wafer W to the exposure location P, which is composed of left and right belts 2, a pulley 3 that stretches these belts 2, and a motor 4 that drives the belt 2. ing. Reference numeral 6 denotes a wafer rotating mechanism provided at the exposure location P, which includes a spin chuck 7, a motor 8 for rotating the spin chuck 7, and an air cylinder 9 for raising and lowering the motor 8 together with the spin chuck 7.

The spin chuck 7 stands by below the conveyance path of the belt 2 until the wafer W reaches the exposure position P, as shown in FIG. 6 (A). After the wafer W is stopped at the exposure position P, as shown in FIG. 6 (B), the air cylinder 9
The wafer W is received from the belt 2 by projecting above the transfer path as the wafer W extends.

FIG. 1 is a partially cutaway front view showing a wafer peripheral edge exposure apparatus, and FIG. 2 is a plan view of an essential part thereof.

The peripheral portion 10 of the wafer W is composed of an arc portion 10a and a straight portion 10b, and a resist (not shown) is applied to the entire surface of the metal film or the like on the wafer W.

Here, the peripheral portion 10 is the wafer W as described above.
A region of a certain width from the outer edge toward the center of the wafer. That is, the arc portion 10a is sandwiched by an arc L ₁ forming an arc-shaped outer edge of the wafer W and an arc L ₂ indicated by a chain double-dashed line which is an arc having a small diameter from the outer edge arc L ₁ by a constant width. Area. Further, the straight line portion 10b is a straight line (orientation flat) L forming a straight outer edge of the wafer W.
And ₃ refers to a region sandwiched by the straight line L ₄ shown by the dotted line passing through the position spaced apart by a predetermined width from the outer edge straight line L _3.

Although not shown in the drawings, an alignment for aligning the center O of the wafer W with the center O ′ of the spin chuck 7 by acting on the peripheral portion 10 of the wafer W is provided on the lateral side portion of the spin chuck 7 at the upper limit position. A mechanism is provided.

The light 1 is applied to the resist portion on the surface of the arc portion 10a of the peripheral portion 10 of the wafer W on the straight line L in the direction Y perpendicular to the transport direction X of the belt 2 through the center O'of the spin chuck 7. A light irradiating means 11 for irradiating a circular arc portion for irradiating ₁ is provided.

The light irradiating means 11 is an optical fiber 12 led out from a light source (not shown) and a holder for holding an end portion of the optical fiber 12.
It has 13 and. The holder 13 has a light irradiation portion 12a, which is the tip end surface of the optical fiber 12, parallel to the surface of the wafer W attracted to the spin chuck 7, and has an arc portion of the wafer W.
The end portion of the optical fiber 12 is held so as to be located above the rotation locus of 10a.

The light irradiation means 11 is configured so that its position can be changed along a straight line L passing through the center O ′ of the spin chuck 7 in order to cope with the size change of the wafer W. That is, the lower plate 13a of the holder 13 is fixed to the fixed base 15 by the screw 14.
A plurality of screw holes 15a of the fixed base 15 are formed along the Y direction, and the position of the holder 13 can be changed by selecting the screw holes 15a.

The light irradiation means 16 for exposing the linear portion is arranged on the back surface side of the wafer W on the side opposite to the light irradiation means 11 for exposing the arc portion with respect to the center O ′ of the spin chuck 7 and the front surface side of the wafer W. The reflecting member 17 is arranged in the.

The light irradiation means 16 includes an optical fiber 18 led out from a light source (not shown), and a holder 19 that holds an end portion of the optical fiber 18. The holder 19 also has a reflecting member 17 attached thereto.

The holder 19 is a light irradiator 18 that is the tip surface of the optical fiber 18.
The light l ₂ emitted from a is blocked by the back surface of the arc portion 10a, and the light l ₂ passes from the outside of the straight portion 10b to the front surface side of the wafer W so that the light irradiation portion 16 is positioned. It holds the end of the optical fiber 18 in a predetermined direction.

The reflecting member 17 is in a posture parallel to the surface of the wafer W adsorbed on the spin chuck 7, and transmits the light l ₂ emitted from the light irradiating unit 18a and passing from the outside of the linear portion 10b to the surface side of the linear portion 10b. It is attached at a position where it reflects toward the resist portion of the surface.

The light irradiation means 16 for exposing the linear portion is located on the back surface side of the wafer W, and is configured to be retracted to the lateral outside position so as not to contact the peripheral portion 10 of the wafer W when the spin chuck 7 is raised. There is. That is, the retainer 19 is the piston rod 20a of the air cylinder 20 that extends and retracts along the Y direction.
Attached to.

Further, the light irradiating means 16 and the reflecting member 17 are configured so that their positions can be changed along the Y direction in order to cope with the size change of the wafer W. That is, the holder
The lower plate 19a of the 19 is attached to the piston rod 2 by a plurality of screws 21.
Although it is attached to the mounting plate 22 at the tip of 0a, a plurality of sets of screw holes 19b of the lower plate 19a are formed along the Y direction, and the position of the holder 19 can be changed by selecting the hosi hole 19b. There is.

Next, the operation of the wafer edge exposure apparatus of this embodiment will be described.

By driving the motor 4 shown in FIG. 6, the belt 2 on which the wafer W is placed is rotated to convey the wafer W toward the exposure location P. When the wafer W reaches the exposure location P, the rotation of the belt 2 is stopped.

Then, the air cylinder 9 is extended and the spin chuck 7 is extended.
Rises above the belt 2 and the wafer W on the belt 2
Is received on the spin chuck 7. Then, the center O of the wafer W is aligned with the center O ′ of the spin chuck 7 by an alignment mechanism (not shown). When the center alignment is completed, vacuum suction is performed in the spin chuck 7 and the wafer W is attracted to the spin chuck 7.

Then, the air cylinder 20 shown in FIG.
Along with 19, the light irradiation means 16 for exposing the linear portion and the reflecting member 17 move to a predetermined position where the wafer W is sandwiched from above and below and stop. Then, after the motor 8 is driven to start the rotation of the wafer W integrally with the spin chuck 7, the light source is turned on and the light l ₁ from the light irradiators 12a and 18a is transmitted through the optical fibers 12 and 18.
Irradiate l ₂ .

Irradiation light l ₁ from the light irradiation unit 12a for exposing the arc portion is irradiated downward to expose the resist portion of the surface of the wafer W located below the light irradiation unit 12a. The exposure is wafer W
The rotation is continuously performed along the circular arc portion 10a.

The irradiation light l ₁ from the light irradiation unit 12a for exposing the arc portion also exposes a part of the surface of the straight portion 10b near the boundary between the straight portion 10b and the arc portion 10a.

The light irradiating section 18a for exposing the linear portion irradiates the light l ₂ obliquely inward and upward from the back surface side of the wafer W. Light irradiation part 18a
The position when the arcuate portion 10a is passing, the irradiation light l ₂
Is blocked by the back surface of the arc portion 10a and does not come out above the wafer W. Change the position of the light irradiation part 18a to the straight part 10b.
When the light passes through, the irradiation light l ₂ passes from the outside of the straight line portion 10b to the front surface side and is reflected by the reflecting member 17 to be reflected by the straight line portion 10b.
The resist portion on the surface of 10b is exposed.

Hereinafter, a detailed situation of exposure of the straight line portion 10b will be described with reference to FIGS. 3 and 4.

FIG. 3A is a plan view and FIG. 3B is a side view. This FIG. 3 shows the moment when the center of the straight line portion 10b comes under the light irradiation portion 18a. At this time, the reference position of rotation θ = 0 °.

At the reference position θ = 0 °, the entire light flux from the light irradiation unit 18a passes through a region T ₀ (a region of a circle hatched with a left downward slope) where the irradiation light passes through a position corresponding to the surface height of the wafer W. . A region in which the light passing through the region T ₀ is reflected by the reflecting member 17 and the surface of the linear portion 10b of the wafer W is exposed is E ₀ (a region of a circle hatched with a right downward slope).
And

As a precondition for deriving a calculation formula described later, the region T ₀ is set in a state where the outer edge straight line L ₃ of the straight line portion 10b is a common tangent line.
Area E ₀ is formed (however, this condition does not limit the present invention). Also, the radius of the outer edge arc L ₁ of the arc portion 10a is R, the length of the perpendicular line from the center O of the wafer W to the outer edge straight line L ₃ is H, and the height of the light flux irradiated from the light irradiation section 18a is equivalent to the surface of the wafer W surface. If the radius at the position is r, then 2r = RH ...

4A is a plan view and FIG. 4B is a side view. This FIG. 4 shows the moment when the wafer W is rotated from the reference position θ = 0 ° by the angle θ.

The passing light flux region Tθ outside the straight line portion 10b is a chord G ₁ corresponding to the outer edge straight line L _{3 as} compared with the passing light flux region T ₀ in FIG.
It becomes the shape that was shaved. Therefore, the exposure area Eθ also has a shape scraped by the chord G ₂ as compared with the exposure area E ₀ in FIG.

Using the symbols shown in the figure, the shortest distance D between the distance between the chord G ₂ and the outer linear L ₃ X.theta, an exposure region Eθ and the outer straight line L ₃
Find θ and.

Xθ = 2rcosθ ...... Dθ = kcosθ-r = (d + r) cosθ-r = {2r- (R-S) + r} cosθ-r = (3r-R + H / cosθ) cosθ-r Then, Dθ = (R−3r) (1-cosθ) ... Therefore, from the outer edge straight line L ₃ , the locus P _{X of} the point at the position of Xθ and the locus P _D of the point at the position of Dθ are the fifth.
As shown in the figure. A region A ₂ surrounded by the locus P _X and the locus P _D is an exposure region by the light irradiation means 16 for linear portion exposure. An area A ₁ surrounded by the outer edge arc L ₁ and an arc L ₂ concentric with the outer edge arc L ₁ is an exposure area A ₁ by the light irradiation means 11 for exposing the arc portion.

As a precaution, when the case of θ = 0 ° is examined, X ₀ = 2r and D ₀ = 0, which are in agreement with FIG.

θ is generally about ± 25 °. When θ = 25 °, cos 25 ° ≈ 0.9063 and X ₂₅ ≈ 0.9063 × 2r,
Only about 9% less than when θ = 0 °. On the other hand, D
The trajectory P _D of θ gradually moves away from the outer edge straight line L ₃ as θ increases, and approaches the trajectory P _X of Xθ. For example,
If R: r = 128: 6, then X ₂₅ ≈ 10.88, D ₂₅ ≈ 10.31, and X ₂₅ ≈ D ₂₅ .

As described above, in the straight line portion 10b, there is a region between the locus P _{D of} Dθ and the outer edge straight line L ₃ which is not exposed by the light irradiating means 16 for the straight line portion exposure, but the region is for the arc portion exposure. Is covered by the exposure area A ₁ by the light irradiation means 11.

After all, in the straight line portion 10b, the exposure width at the location of θ = 0 ° becomes X ₀ , and the exposure width at the location of θ = 25 ° becomes X ₂₅ ,
Both exposure widths X ₀ and X ₂₅ are substantially equal. If the exposure width U of the arc portion 10a is made equal to the exposure width X ₂₅ of the straight line portion 10b at θ = 25 °, the exposure area A ₁ of the arc portion 10a and the straight line portion 10b.
The non-exposed portion does not occur at the boundary with the exposure area A ₂ .

In the above example, the rate of increase in exposure width X ₀ of theta = 0 ° with respect to the exposure width U in the exposure width X ₂₅ and thus the arc portion 10a of theta = 25 ° is at 1 ÷ 0.9063 ≒ 1.103 times,
It is about 10%, and at such an increase rate, it can be considered that the exposure widths of the arc portion and the straight portion are practically the same.

Further, in order to irradiate the peripheral edge portion 10 with the irradiation light l ₂ obliquely from below, even when the resist is attached so as to hang down at the outer edge arc L ₁ and the outer edge straight line L ₃ , the dripping resist is also exposed. Can be removed by.

7 and 8 show another embodiment of the first invention, FIG. 7 is a partially cutaway front view of a wafer peripheral edge exposure apparatus, and FIG. 8 is a side view of the main part thereof.

This is a holding tool 23 that shares the light irradiating means 11 for exposing the arc portion, the light irradiating means 16 for exposing the linear portion and the reflecting member 17 in common.
The pulse motor 24 and the ball screw 25 are used to reciprocate them between the exposure position P and the retreat position while holding them at the same time.

Specifically, a nut member 26 is attached to the holder 23, a screw shaft 27 that engages with balls (not shown) held by the nut member 26, and a bearing 28 that supports the screw shaft 27.
A coupling 29 connecting the output shaft 24a of the pulse motor 24 and the screw shaft 27, and in parallel with the screw shaft 27 to guide the nut member 26 to move in and out with the rotation of the nut member 26 restricted. The guide rod 30 is provided and penetrates the nut member 26. 31 is an optical fiber 18
It is a band for fixing. With this configuration, it is possible to easily deal with the size change of the wafer W.

In the embodiment of the first invention shown in FIGS. 1 to 7, when θ = 0 °, the region T ₀ and the region E ₀ are in a state where the outer edge straight line L ₃ of the straight portion 10b of the wafer W is a common tangent line. Is formed and the radius r of the light flux irradiated from the light irradiation means 16 for exposing the linear portion 10b at the height equivalent to the wafer surface is 2r = R.
And the condition setting When it is the size of -H, although the reflecting member 17 parallel to installation and the wafer W, for example, or protrude outwardly from the arcuate outer edge straight line L ₃ to form a region E _0, the shape of the region E ₀ May be an ellipse, a rectangle, or another polygon instead of a perfect circle, and the first invention does not limit the size and center position of the region T ₀ or the region E ₀ to the above conditions, and the light irradiation means 11, 16
The orientation, the thickness of the luminous flux to be emitted, the spot shape, the orientation of the reflecting member 17, and the like may be appropriately changed.

In this way, the light irradiation means 11 and 16 and the reflection member 17 enable the required linear part exposure without the need to provide the linear part detection means and the light irradiation position changing means.

Second Embodiment of the Invention FIG. 9 is a schematic block diagram of a wafer peripheral edge exposure apparatus.
The figure is an enlarged side view of the main part.

In this embodiment, the light irradiating means for the arc portion 10a and the light irradiating means for the straight portion 10b are shared, and the common light irradiating means 32 is arranged on the back surface side of the wafer W. On the front surface side of the wafer W, a reflecting member 33 which is common to the arc portion exposure and the linear portion exposure is arranged.

The light irradiation means 32 includes an optical fiber 34 led out from a light source (not shown), and a holder 35 that holds the end of the optical fiber 34. The holder 35 also has a reflecting member 33 attached thereto.

The diameter r'at the height position of the wafer W of the optical fiber 34 is the first
It is twice the diameter r of the optical fiber 18 in the embodiment of the invention.

The holder 35 is provided with a light irradiator 34, which is the tip surface of the optical fiber 34.
The inner half light l ₃₂ that is a part of the irradiation light l ₃ from a is blocked by the back surface of the arc portion 10a, and the outer half light l ₃₁ that is the remaining part of the irradiation light l ₃ is an arc portion. The position and direction of the light irradiation section 34a are determined so that the light irradiation section 34a passes from the outside of 10a to the front surface side of the wafer W, and the end of the optical fiber 34 is held.

The reflection member 33 is in a posture parallel to the surface of the wafer W adsorbed and held by the spin chuck 7, and resists the outer half light l ₃₁ that has passed from the outside of the arc portion 10a to the surface side on the surface of the arc portion 10a. Reflects toward a part and straight part
It is attached to a position where the light half ₃₂ of the inner half that has passed from the outside of 10b to the surface side is reflected toward the resist portion on the surface of the linear portion 10b.

The mechanism for retracting the light irradiation means 32 and the reflecting member 33 in the lateral direction is the same as that of the embodiment of the first invention (FIG. 1) or another embodiment thereof (FIG. 7). Since the same applies to other configurations, the corresponding or corresponding portions will be denoted by the same reference numerals, and description thereof will be omitted.

Next, the operation of this embodiment will be described with reference to FIG.

FIG. 11A shows the moment when the center of the straight line portion 10b comes directly above the light irradiation portion 34a. At this time, the reference position of rotation θ = 0
Let be °.

At the reference position θ = 0 °, in the area T ₀ ′ (the area of the circle hatched to the lower left) where the irradiation light l ₃ passes through the height equivalent to the surface of the wafer W, the total luminous flux from the light irradiation unit 34a. Passes through. The light passing through the area T ₀ ′ is reflected by the reflecting member 3
A region that is reflected by 3 and exposes the surface of the linear portion 10b of the wafer W is E ₀ ′ (a region of a circle hatched to the lower right).

As a condition, it is assumed that an arc forming the area T ₀ ′ is circumscribed with respect to the outer edge straight line L ₃ and an arc forming the area E ₀ ′ is inscribed with respect to the outer edge arc L ₁ .

The exposure area E ₀ ′ when θ = 0 ° is a semicircle, and the straight line portion of the semicircle coincides with the outer edge straight line L ₃ .

As in the case of the first embodiment of the present invention, as the angle θ increases, the area of the passing light flux region Tθ ′ outside the linear portion 10b is cut by the outer edge straight line L ₃ or the outer edge straight line L ₃ and the outer edge arc L _1. Is increased (see (B) to (E) in FIG. 11).

Therefore, the exposure area Eθ ′ is the chord G ₂ corresponding to the outer edge straight line L ₃ or the arc G ₂₁ corresponding to the chord G ₂ and the outer edge arc L _1.
The area to be shaved will also increase. That is, the distance Xθ ′ between the string G ₂ and the outer edge straight line L ₃ is Xθ ′ = r′cos θ = 2r cos θ, where r ′ is the radius of the light flux from the light irradiation unit 34a at the height equivalent to the surface of the wafer W. It becomes ...

However, the straight line portion outside the exposure area Eθ ′ at an arbitrary angle θ always coincides with the outer edge straight line L ₃ .

When the arc portion 10a is positioned directly above the light irradiation portion 34a, as shown in FIG. 11 (F), the inner half light l ₃₂ of the irradiation light l ₃ is blocked by the outer edge arc L ₁ . is, light l ₃₁ of the outer half 'becomes lacks moon shaped, exposed region E' region T which passes also a lack moon shaped congruent to passing area T '. The outer edge of the exposure area E ′ coincides with the outer edge arc L ₁ . Exposure in such a state is similarly performed over the entire length range of the arc portion 10a.

After all, also in this embodiment, the exposure of the same locus as in the case of the first embodiment of the invention is performed on the peripheral portion 10 of the wafer W. Of course, the exposure area A ₁ of the arc portion 10a and the linear portion 10
There is no unexposed portion at the boundary between b and the exposure area A ₂ (see FIG. 5).

In the second invention, since the arc portion and the straight portion are exposed by the reflected light from the reflecting member, even if the center of the wafer and the center of rotation of the wafer do not coincide with each other, the outer edge arc L ₁ to the wafer center with respect to the arc portion 10a. The exposure is performed with a uniform width in the direction.

The other operations are similar to those of the first embodiment of the present invention, and therefore their explanations are omitted.

In the embodiment of the second invention described above, when θ = 0 °, the arc forming the area T ₀ ′ circumscribes the outer edge straight line L ₃ ,
The arc forming the area E ₀ ′ is inscribed in the outer edge arc L ₁ , and the radius r ′ of the light beam irradiated from the light irradiation means 32 at the height equivalent to the wafer surface is r ′ = R−H. However, for example, when θ = 0 °, the arc forming the area E ₀ ′ extends outward from the outer edge arc L ₁ or the center thereof is set. The position may be located outside the outer edge straight line L _3, and the shape of the region E ₀ ′ may be an ellipse, a rectangle, or another polygon instead of a perfect circle. In the second invention, the region T ₀ ′ and the region E ₀ are provided. The size and center position of ₀ ′ are not limited to the above conditions, and the light irradiation means 32
The orientation, the thickness and the spot shape of the luminous flux irradiated, the orientation of the reflecting member 33, and the like may be appropriately changed.

Embodiment of Third Invention FIG. 12 is a schematic configuration diagram of a wafer peripheral edge exposure apparatus, and FIG.
The figure is an enlarged side view of the main part.

Also in this embodiment, the light irradiating means for the arc portion 10a and the light irradiating means for the straight portion 10b are made common.

At the upper position of the arc portion 10a on the front surface side of the wafer W,
The light l _{4 is} directly applied to the resist portion on the surface of the arc portion 10A.
The light irradiation means 36 for irradiating the
The first reflecting member 37 is arranged on the lower surface side of the wafer W below, and the second reflecting member 38 is arranged inside the light irradiation means 36 on the front surface side of the wafer W. Light irradiation means
36 is an optical fiber 39 led from a light source (not shown),
And a holder 40 for holding the end portion of the optical fiber 39.

The holder 40 includes a first reflecting member 37 and a second reflecting member 38.
Is also attached. The light irradiation portion 39a, which is the front end surface of the optical fiber 39, is parallel to the surface of the wafer W attracted to the spin chuck 7. The diameter r ″ of the optical fiber 39 is twice the diameter r of the optical fiber 18 in the embodiment of the first invention. The center of the light irradiation portion 39a is located above the outer edge arc L ₁ .

When the arc portion 10a is below the light irradiation portion 39a, the irradiation light l ₄
The light l ₄₂ of the inner half of the light directly enters the resist portion on the surface of the arc portion 10a. The outer half light l ₄₁ is an arc
It passes through the outside of 10a to the back side and enters the first reflecting member 37. The first reflecting member 37 is attached at an angle such that all of the reflected outer half light l ₄₂ is blocked by the back surface of the arc portion 10a.

When the straight portion 10b reaches the light irradiation portion 39a, both the outer half light l ₄₁ and the inner half light l ₄₂ pass through the outer side of the straight portion 10b to the back side and are reflected by the first reflecting member 37. . All of the reflected inner half light l ₄₂ is blocked by the back surface of the straight portion 10b.

The reflected half light l ₄₁ passes through the outside of the straight portion 10b to the surface side and is reflected by the second reflecting member 38. The second reflecting member 38 transmits the light l _{41 of the} outer half thereof to the straight portion 10b.
Is attached at an angle to reflect the light so that it is vertically incident on the resist portion of the surface of the. The angle is the same as the angle of the first reflecting member 37, and the first reflecting member 37 and the second reflecting member 38 are parallel to each other.

Regarding the mechanism for laterally moving the light irradiating means 36, the first reflecting member 37 and the second reflecting member 38, the embodiment of the first invention (FIG. 1) or another embodiment thereof (FIG. 7) Is the same as. Since the same applies to other configurations, the corresponding or corresponding portions will be denoted by the same reference numerals, and description thereof will be omitted.

Next, the operation of this embodiment will be described with reference to FIG.

FIG. 14 (A) shows the moment when the center of the straight line portion 10b comes directly above the light irradiation portion 39a. At this time, the reference position of rotation θ = 0
Let be °.

At the reference position = 0 °, the outer half of the light l reflected from the first reflecting member 37 at the height equivalent to the surface of the wafer W.
_The region where ₄₁ passes from the bottom to the top is a semi-elliptical region (shape very close to a semi-circle) T ₀ ″ that is hatched to the left.
Becomes The semi-elliptical shape is because the first reflecting member 37 is inclined. The outer half light l ₄₁ passing through the area T ₀ ″ is reflected by the second reflecting member 38 to expose the resist portion on the surface of the linear portion 10 b of the wafer W, and the exposed area is a semicircle with a right downward slope. Area E ₀ ″.

As a condition, it is assumed that the semicircular ellipse forming the region T ₀ ″ is inscribed with respect to the outer edge arc L ₁ and the semicircle forming the region Eθ ″ is inscribed with respect to the outer edge straight line L ₃ .

When θ = 0 °, the exposure area Eθ ″ becomes a semicircle, and the chord G ₂ of the semicircle becomes substantially parallel to the outer edge straight line L _{3. As in} the case of the first embodiment of the invention, the angle θ increases. The area of the passing light flux region Tθ ″ outside the straight line portion 10b is increased by the chord G ₁ corresponding to the outer edge straight line L ₃ (see FIG. 14B).

Therefore, the area in which the exposure region Eθ ″ is scraped off by the string G ₂ also increases. That is, the distance X between the string G ₂ and the outer edge straight line L _3.
θ ″ is Xθ ″ = r ″ cos θ = 2r cos θ, where r ″ is the radius of the light beam from the light irradiation section 39a, and the exposure area A ₂ of the linear portion 10b is as shown in FIG. 14 (C). .

As in the case of the first embodiment, there is an unexposed area between the outer edge of the semicircular exposure area Eθ ″ and the outer edge straight line L ₃ .

When the arc portion 10a is located directly above oblique light irradiation unit 39a, as shown in FIG. 14 (C), the inner half of the illumination light l ₄ Light l ₄₂ of the surface of the arcuate portion 10a It is directly incident on the resist portion. The outer half light l ₄₁ passes through to the back surface side and is reflected by the first reflecting member 37, but the reflected light is blocked by the back surface of the arc portion 10a.

As described above, in the linear portion 10b, the first reflecting member 3
Although there is a region that is not exposed by the reflected light from 7 and the second reflecting member 38, that region is the inner half of the light l.
_The exposure area A ₁ by ₄₂ is covered.

After all, also in this embodiment, the exposure of the same locus as in the case of the first embodiment of the invention is performed on the peripheral portion 10 of the wafer W. Of course, the exposure area A ₁ of the arc portion 10a and the linear portion 10
There is no unexposed portion at the boundary between b and the exposure area A ₂ .

The other operations are similar to those of the first embodiment of the present invention, and therefore their explanations are omitted.

The embodiment of the third invention shown in FIGS. 12 to 14 is θ = 0.
When the angle is °, the condition is set such that the semi-ellipse forming the area T ₀ ″ is inscribed in the outer edge arc L ₁ and the semi-circle forming the area E ₀ ″ is inscribed in the outer edge straight line L ₃ . Although the reflecting member 37 and the second reflecting member 38 are installed in parallel with each other, the third invention does not limit the size and center position of the region T ₀ ″ and the region E ₀ ″ to the above conditions, and The direction of the means 36, the thickness of the luminous flux emitted by the means 36, the spot shape, the directions of the reflecting members 37, 38, etc. may be changed as appropriate.

Further, in the first to third inventions, the light irradiating means and the reflecting member do not necessarily have to be extended and retracted in the lateral direction.

<Effects of the Invention> Even if the position of the arc portion or the linear portion of the wafer is not detected, the arc portion can be exposed in an arc shape and the linear portion can be exposed in a substantially linear shape by simply rotating the wafer. it can.

[Brief description of drawings]

1 to 6 relate to an embodiment of the present invention, FIG. 1 is a partially cutaway front view showing an apparatus for exposing a peripheral portion of a wafer, FIG. 2 is a plan view of an essential portion thereof, and FIG. FIGS. 4A and 4B are operation explanatory views, FIG. 3A is a plan view, FIG. 4A is a plan view, FIG. 3B is a side view, and FIG. FIG. 5 is a plan view showing an exposure area of a peripheral portion, FIG. 6 is a schematic side view of a peripheral exposure apparatus for a wafer, FIG. 5A showing a wafer being transferred, and FIG. It is a figure which shows a state. 7 and 8 relate to another embodiment of the first invention, FIG. 7 is a partially cutaway front view of a wafer peripheral edge exposure apparatus, and FIG. 8 is a side view of a main portion. 9 to 11 relate to an embodiment of the present second invention, FIG. 9 is a front view of a wafer edge exposure apparatus, FIG. 10 is an enlarged front view of the main portion thereof, and FIG. ) To (F) are plan views for explaining the operation. FIGS. 12 to 14 relate to an embodiment of the present invention, FIG. 12 is a front view of a wafer edge exposure apparatus, FIG. 13 is an enlarged front view of the main portion thereof, and FIG. )-(C) are plan views for explaining the operation. W: Wafer 6: Wafer rotating mechanism 10: Edge part 10a: Arc part 10b: Straight part 11: Light irradiation means for exposing arc part 16: Light irradiation means for exposing linear part 17 ... Reflecting member 32 ...... Light irradiating means 33 ...... Reflecting member 36 ...... Light irradiating means 37 ...... First reflecting member 38 ...... Second reflecting member 12,18,34,39 ...... Optical fiber 12a, 18a ... … Light irradiation part 34a, 39a …… Light irradiation part l _{1 to} l ₄ …… Irradiation light

Claims (3)

(57) [Claims] 1. A wafer rotating mechanism for mounting and rotating a wafer, the peripheral portion of which is an arc portion and a linear portion, the surface of which is coated with a resist, and an arc portion for irradiating the surface of the arc portion with light. A light irradiating means for exposure and a straight line portion which is arranged on the back surface side of the wafer and whose irradiation light is blocked by the arc portion, and which radiates light to the straight line portion in a direction passing from the outside to the front surface side. Peripheral exposure of a wafer provided with a light irradiating means for exposure and a reflecting member which is arranged on the front surface side of the wafer and which reflects the light passing from the outside of the linear portion toward the front surface toward the surface of the linear portion. apparatus. 2. A wafer rotating mechanism for mounting and rotating a wafer, the peripheral portion of which is a circular arc portion and a linear portion, the surface of which is coated with resist, and a wafer rotating mechanism arranged on the back surface side of the wafer placed on the wafer rotating mechanism. A part of the irradiation light is blocked by the arc part and the remaining part is irradiated with light in a direction of passing from the outside of the arc part to the surface side, and is arranged on the front surface side of the wafer. A reflecting member that reflects light passing from the outside of the arc portion toward the front surface toward the surface of the arc portion and reflects light passing from the outside of the straight portion toward the surface toward the surface of the straight portion A wafer peripheral edge exposure apparatus comprising: 3. A wafer rotating mechanism having a peripheral portion formed by an arc portion and a linear portion, the wafer having a surface coated with a resist is placed and rotated, and the wafer is placed on the front surface side of the wafer rotating mechanism. The light irradiating means is disposed at an upper position of the arc portion and irradiates the surface of the arc portion with light, and the light irradiating portion of the light irradiating means is disposed under the light irradiating portion on the back surface side of the wafer, and the linear portion is the light beam. A first reflecting member that reflects the light from the light irradiating means that has passed through the outside of the linear portion when it corresponds to the irradiation portion so as to pass from the outside of the linear portion to the front surface side, and is arranged on the front surface side of the wafer. And a second reflecting member that reflects the reflected light from the first reflecting member toward the surface of the straight line portion, and a wafer peripheral edge exposure apparatus.