JP3087209B2 - Exposure equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, and more particularly, to an exposure apparatus that exposes the periphery of an object to be processed such as a semiconductor wafer and removes a peripheral resist film.

[0002]

2. Description of the Related Art Generally, in a semiconductor device manufacturing process, a circuit pattern is reduced on a surface of an object to be processed such as a semiconductor wafer (hereinafter, referred to as a wafer) by using a photolithography technique and transferred to a photoresist. Are subjected to a series of processings for developing.

In this photolithography process,
For example, after a wafer to be processed is cleaned by a cleaning apparatus, the wafer is subjected to a hydrophobic treatment by an adhesion processing apparatus, cooled by a cooling processing apparatus, and then subjected to a photoresist coating, ie, a photosensitive film by a resist coating apparatus. Is applied and formed.
Then, after the photoresist is heated by a heat treatment device and subjected to a baking treatment, a predetermined pattern is exposed by an exposure device. Then, after developing and applying the developing solution to the exposed wafer using a developing device, the developing solution is washed away with a rinsing solution to complete the developing process. In such a photolithography process, a positive resist excellent in resolution is mainly used.

In performing the above-described processing, a processing of applying a resist solution to the surface of an object to be processed such as a wafer by a spin coating method is performed. In this coating processing, the film thickness immediately after the application is uniform. However, after the rotation stops and the centrifugal force stops working, and as time goes by, the resist solution becomes thicker so that the resist solution swells around the wafer due to the effect of surface tension, and the resist solution reaches the lower surface periphery of the wafer. A phenomenon occurs in which an unnecessary film is formed by wrapping around. When a non-uniform film is formed on the peripheral portion of the wafer in this way, the resist film on the peripheral portion remains without being completely removed during the development of an integrated circuit pattern or the like. The remaining resist is peeled off, causing particles to be generated.

Therefore, conventionally, after a resist solution is applied to the surface of a wafer, a process of removing an unnecessary coating film on a peripheral portion of the wafer has been performed. As one of means for removing the unnecessary resist film, an exposure apparatus that relatively moves a light irradiation unit along a peripheral portion of the object to be processed and exposes the unnecessary resist film in a peripheral portion of the object to be processed is used. (See Japanese Utility Model Publication No. 5-30348, Japanese Utility Model Publication No. 5-30349, and Japanese Patent Application Laid-Open No. 5-25969).

The above exposure apparatus irradiates a UV (ultraviolet) light in a circular or rectangular irradiation pattern onto an unnecessary resist film on the periphery of a wafer.

[0007]

However, when the irradiation pattern is circular, as shown in FIG.
There is a range in the UV illuminance distribution that is considered to be uniform in practice,
For example, since the range of the radius of 2.5 mm is the limit to the center of the V illuminance distribution, the peripheral speed at the time of rotation on the outer peripheral side and the inner peripheral side and the peripheral center side of the exposed area in the peripheral part of the object to be processed is limited. Due to the difference, the exposure amount is different, resulting in non-uniform exposure, and there is a problem that a resist partially remains after development after exposure, which is unsuitable as a light irradiation pattern. On the other hand, when the irradiation pattern is rectangular, as shown in FIG. 12, the required exposure amount is satisfied at the cut edge portion a of the resist film applied to the wafer W to be processed. Since the exposure amount in the portion is smaller than that in the inner peripheral portion, as shown in FIG. 13, there is a possibility that uneven illuminance occurs, exposure failure occurs, and the resist remains. In order to solve this, it is conceivable to increase the exposure amount by increasing the illuminance of the light source and enlarging the light irradiation pattern. However, simply increasing the illuminance causes a bubbling phenomenon to occur in the resist film. There is a problem that circuit patterns are hindered. In addition, it is conceivable to increase the exposure time without increasing the illuminance. However, there is a problem that the exposure time is not suitable for the purpose of improving the throughput.

Further, as shown in FIG. 14, in trench technology in which a deep groove h (trench coat) is dug in a wafer W and a capacitor and an element isolation region are formed therein, the trench coat h is etched. In this case, there is a problem that the peripheral portion of the wafer W is also etched due to the presence of the remaining resist, and a recess c is formed.

In the case where the light irradiation pattern is rectangular, when exposing the orientation flat Wa portion of the wafer W, as shown by imaginary lines in FIG. Exposure by moving it toward the center of
Since the mask b is located obliquely to the side of the orientation flat Wa except for the center of the orientation flat Wa,
In the orientation flat Wa portion, the irradiation amount is reduced, and a sparse exposure portion is generated. Since the sparsely exposed portion has a small irradiation amount, the resist portion is gently removed when the wafer W is developed later,
A so-called dripping phenomenon occurs, and the resist film cannot be removed sharply. In order to solve this problem, when the applicant first exposes the orientation flat of the wafer, the light irradiation of the light irradiation means is set so that one side of the rectangular light irradiation pattern (mask) of the light irradiation means is parallel to the orientation flat. A method for uniformly exposing the orientation flat portion of the wafer W by controlling the position of the wafer W has been developed (see Japanese Patent Application Laid-Open No. H5-25969). According to this exposure method, it is possible to make the exposure of the orientation flat portion uniform, but as long as the light irradiation pattern is formed in a rectangular shape, as described above, in the outer peripheral portion,
Irradiation unevenness occurs between the inner and outer peripheral sides, and exposure failure may occur.

[0010] The present invention has been made in view of the above circumstances, and without increasing the illuminance and reducing the exposure time,
It is an object of the present invention to provide an exposure apparatus capable of performing an exposure process.

[0011]

In order to achieve the above object, a first exposure apparatus of the present invention moves a workpiece and a light irradiating means relatively to each other, and Assuming an exposure apparatus that exposes the peripheral portion over a predetermined width, the light irradiation shape of the light irradiation unit is such that the inner side located at the peripheral portion of the object to be processed and the inner side positioned outward from the end of the inner side. comprising an inclined edges diverging at a predetermined angle, the inclination of the light irradiation shape
The angle (θ) with respect to the line tangent to the inner side of the side
When the radius of the body (R) and the length of the notch (P) are given, θ
= Sin ^-1 (P / 2) / R. (Claim 1)

Further, in the second exposure apparatus of the present invention, the object to be processed and the ultraviolet light irradiation means are relatively moved,
Assuming an exposure apparatus that exposes the peripheral portion of the resist applied on the surface of the object over a predetermined width, the light irradiation shape of the light irradiating means is such that the inner side positioned at the peripheral portion of the object is exposed. A side, and an inclined side that expands outward from an end of the inner side at a predetermined angle, and the length of the inner side is 1.
5 to 3.5 mm , the inner side of the inclined side of the light irradiation shape
Angle (θ) with respect to the line tangent to the radius of the object to be processed
(R), notch length (P), θ = sin ⁻¹
It is set based on (P / 2) / R (claim 2).

In the present invention, the inner side of the light irradiation shape of the light irradiating means may be a straight line as long as it is located at a peripheral portion of the object to be processed. It is better to have a curvature approximating the circumference of a circle centered on the center of (Claim 3).

[0014]

According to the exposure apparatus of the present invention, the light irradiation shape of the light irradiation means expands outward at a predetermined angle outward from the inner side located at the peripheral portion of the object to be processed and the end of the inner side. With a sloping side, and a line tangent to the inner side of the sloping side of the light irradiation shape
The angle (θ) with respect to the radius (R) of the object to be processed and the notch
Assuming the length (P), θ = sin ^-1 (P / 2) / R
Therefore, when the processing object and the light irradiation unit are relatively moved to perform the exposure processing on the peripheral portion of the processing object, in the circular portion of the processing object, the inner side is the processing object. The peripheral portion of the object to be processed can be exposed in a state in which the inclined side is in contact with the peripheral edge on the center side of the object and the inclined side is widened from the end of the inner side. Therefore, the inner peripheral portion and the outer peripheral portion of the peripheral portion of the object to be processed can be effectively exposed, and the resist remaining due to exposure failure can be prevented.

In the case where the notch of the object is subjected to the exposure processing, the exposure is performed while the inclined side is moved so as to be in contact with the peripheral edge on the center side of the object. Etc. can be prevented.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the drawings. Here, a case where the exposure apparatus of the present invention is applied to a semiconductor wafer coating / developing processing system will be described.

As shown in FIG. 1, the semiconductor wafer coating / developing processing system 1 includes a plurality of cassettes 2 each of which accommodates, for example, a large number of semiconductor wafers W (hereinafter, referred to as wafers) as an object to be processed. And a carrier arm 3 configured to be able to place four wafers in a straight line, for example. Is provided. In addition, a main arm 5 is provided at the center of the coating / developing processing system 1 so as to be movable in its length direction, and a main arm 5 for transferring the wafer W from the auxiliary arm 4 is provided. Various processing mechanisms are arranged on both sides of the road. Specifically, these processing mechanisms include a process station 6 on one side of the carrier station 3 side.
For example, a brush scrubber 7 for brush cleaning a wafer W and a high-pressure jet cleaning machine 7A for performing cleaning with high-pressure jet water are provided side by side, and two heating devices 9 are provided next to each other while being stacked. On the other side of the transfer path of the main arm 5, two developing devices 8 are arranged in parallel.

Further, on the side of the process station 6, an adhesion processing apparatus 11 is provided as another process station 6A via a connection unit 10 for applying a hydrophobic treatment to a wafer W, for example, before applying a photoresist to the wafer W. Is provided, and a cooling device 12 is disposed below the cooling device. On the side of these devices 11, 12, two heating devices 9 are arranged in two rows.

On the opposite side of the heating device 9 and the adhesion processing device 11 across the transfer path of the main arm 5, an exposure device 13 of the present invention and a resist coating device for coating a photoresist liquid on the wafer W are provided. 14 are provided side by side. Although not shown, an exposure device for exposing a predetermined fine pattern to the resist film via an interface unit is provided at a side portion of the resist coating device 13.

As shown in FIG. 2, the exposure apparatus 13 according to the present invention comprises a mounting table 21 which holds a wafer W by suction and rotates in a horizontal direction, and an orientation flat Wa of the wafer W mounted on the mounting table 21. Detecting means 3 for detecting a notch (notch)
0 and light irradiating means 40 for irradiating UV (ultraviolet) light to the periphery of the resist film applied to the surface of the wafer W.

The mounting table 21 is connected to a driving motor 23 via a rotary shaft 22 so as to be rotatable in the horizontal direction. The mounting table 21 is arranged so as to be vertically movable by a lifting cylinder (not shown). Further, a small suction hole (not shown) provided on the mounting surface of the mounting table 21 is connected to a vacuum device (not shown) via the inside of the rotating shaft 22 so that the wafer W can be suction-held. Have been. The mounting table 21 and the like are configured to be able to advance and retreat in the direction of the light irradiation means 40 by a moving mechanism (not shown).

The orientation flat detecting means 30 is mounted on the mounting table 21.
The light emitting unit 31 and the light receiving unit 32 face the front and back surfaces of the peripheral portion of the wafer W mounted thereon. The signal detected by the orientation flat detecting means 30 is transmitted to a control unit 50 formed, for example, by a central processing unit (CPU), and is compared with information input in advance to the control unit 50. The control unit 50 is configured to transmit a control signal to the drive motor 23 and the drive unit 40A of the light irradiation unit 40.

On the other hand, as shown in FIGS. 3 and 4, the light irradiating means 40 includes an optical conduit 41 formed of, for example, an optical fiber or a liquid fiber for guiding exposure light from a UV light source (not shown). A diaphragm 43 and a lens group 44 provided in a cylindrical body 42 attached to the distal end of the light conduit 41; and a light irradiation pattern mounted on the distal end of the cylindrical body 42 and irradiating UV light to a peripheral portion of the wafer W. And a mask 45 having an opening for forming. In addition, a moving mechanism (not shown) of the light irradiation driving unit 40A allows
The light irradiation means 40 is configured to be able to move forward and backward in the direction of the rotation center of the mounting table 21.

Opening 45A formed in mask 45
Has an inner side 46 arranged toward the center side of the wafer W, and an inclined side 47 expanding outward at a predetermined angle θ outward with respect to a straight line passing through both ends of the inner side 46. It is formed in a hexagonal shape having a trapezoidal portion (see FIG. 4).
In other words, the light irradiation pattern is formed in a shape that extends outward with respect to the inner side 46 portion. In this case, the inner side 46 may be a straight line, but as shown in FIG. 6, a circular arc surface 48 having a curvature approximating the curved surface of the circle Wb centered on the center of the wafer W is more circular. Wb
Is preferable in that it can be exposed along. If this arc surface 48 is formed for an 8-inch diameter wafer, the maximum gap between the straight line connecting both ends of the inner side 46 and the arc surface 48 is about 8 μm.

The length La of the inner side 46 is
The dimensions are set so that an exposure amount appropriate for removing the resist film applied to the surface of the substrate can be obtained. In other words, when the exposure amount is insufficient, the resist remains, and when the exposure amount is large,
Since resist bubbling occurs, it is necessary to consider these factors and to make the dimensions such that an appropriate exposure amount can be obtained.

Generally, the exposure amount A (mJ / cm 2) is obtained by the following equation. A = B × T × Ms / S (mJ / cm 2) (1) where A: exposure amount (mJ / cm 2), B: lamp illuminance (mW / cm 2), T: exposure time (sec), MS :
Mask area (mm2), S: total exposure area (mm2).

From the above equation (1), it can be seen that a greater exposure can be obtained by increasing the illuminance of the lamp and enlarging the mask area.
However, increasing the lamp illuminance has a problem of resist foaming. The UV illuminance distribution has a range as shown in FIG. 11, and furthermore, the outer periphery of the circumferential portion of the wafer W is exposed in an arc shape, and the orientation flat Wa portion is exposed in a straight line. The irradiation shape is limited.

When the area of the above equation (1) is represented by a length, the exposure amount A (mJ / cm 2) is represented by the following equation. A = B × T × ML / L (mJ / cm 2) (2) where ML: mask side length (mm), L: total exposure length (mm).

According to the above equation (2), when the length (ML) of the side of the mask 45 is short, the exposure amount is small and an exposure failure occurs.

Therefore, it is necessary to set the length of the inner side 46 to a length at which an appropriate exposure can be obtained. Diameter 8
Using an inch wafer as an example, the mask 4 under the following conditions
When the relationship between the side length of No. 5 and the exposure amount was examined, the graph shown in FIG. 7 was obtained.

★ Conditions ・ Diameter of wafer W: 200 (mm) ・ Exposure time: 40 (sec) ・ Resist cut width: 4 (mm) ・ Lamp illuminance: 1200 (mW / cm 2 ・ Required exposure amount: 200 (mW / cm2)-ML range: 0 to 5.0 (mm).

The UV illuminance distribution is circular as shown in the graph of FIG. 11 and decreases in a certain range, but the radius L = 2.5 mm
From within, the exposure does not change much.

When the exposure amount when L = 2.5 mm is obtained from the above equation (2), A = 1200 × 40 × 2.5 / (200−4 × 2) × π
≒ 200 (mJ / cm 2) (3) From the above equations (2) and (3), the length L of the inner side 46 is determined.
By setting a to 2.5 mm, it is possible to irradiate the resist cut edge portion (center-side peripheral portion) in the peripheral portion of the wafer W with a necessary amount of UV light, and to reduce the resist even if the processing time is reduced. The resist can be removed without leaving any residue. Practically, La = 1.5
It is also possible to set it to 3.5 mm.

If the mask 45 is a rectangle of 2.5 × 5 (mm), the required exposure amount is satisfied at the resist cut edge portion (center side peripheral portion), but the exposure amount at the outer periphery of the wafer is approximately 190. (MJ / cm 2), and there is a possibility that exposure failure may occur if uneven illuminance is considered. Therefore, for reliable exposure, it is ideal that the shape of the mask spreads from the center of the wafer toward the outer periphery.

The angle θ of the inclined side 47 (the angle formed between the line contacting the peripheral portion on the wafer center side and the inclined side 47) is such that the diameter (radius: R) of the wafer W and the length P of the orientation flat Wa are substantially constant. Depends on the wafer size. That is, the angle θ can be obtained based on the following equation (4) (see FIG. 5). That is, θ = sin ⁻¹ (P / 2) / R (degree) (4) According to the above equation (4), for a 6-inch wafer, θ ウ エ ハ 2
In the case of a 4 (degree) and 8-inch wafer, θ ≒ 18 (degree). As described above, by setting the angle θ of the inclined side 47 based on the above equation (4), it is possible to eliminate the exposure failure at the portion where the circumferential portion of the wafer W and the orientation flat portion contact each other, as shown in FIG. It is possible to improve the so-called “slope width”. Further, by setting the length Lb of the inclined side 47 to 2.5 mm, which is the same as the length La of the inner side 46 for the above-described reason, the UV of the exposure amount necessary for the resist cut edge portion in the orientation flat Wa portion is obtained. Light can be applied. The distance between the lower end mask 45 of the light irradiation means 40 and the exposed portion on the upper surface of the wafer W is, for example, 0.5 to 1.
It is set to about 0 mm. Therefore, the UV light emitted from the opening 45A of the mask 45 irradiates the surface of the wafer W with the same light irradiation pattern as the shape of the opening 45A.

Next, a procedure for exposing the resist in the peripheral portion of the wafer W using the light irradiation means 40 having the above-described configuration will be described with reference to FIG. First, the position of the orientation flat Wa of the wafer W placed on the mounting table 21 is determined by the orientation flat detecting means 30 by the main arm 5 in a state where the center of the wafer W and the rotation center of the mounting table 21 coincide with each other. The detection signal is transmitted to the control unit 50, and the drive motor 23 is driven by the control signal from the control unit 50, and the mounting table 21 is rotated by a predetermined angle so that the wafer is positioned immediately below the light irradiation unit 40. An exposure start point where the circumference of W and one end of the orientation flat comes into contact is set. At this time, the inner side 46 of the mask 45 of the light irradiation means 40 is set in a state of being in contact with the resist cut edge portion of the wafer W, that is, the inner peripheral portion Wb of the resist film.

Next, one or both of the mounting table 21 and the light irradiation means 40 are moved to set a predetermined exposure position, and the light source of the light irradiation means 40 is turned on to emit UV light around the wafer W. In addition, the driving motor 23 is driven to rotate the mounting table 21 and the wafer W in a counterclockwise direction to expose an unnecessary resist portion on the circumferential portion of the wafer W as shown by hatching (FIG. 8A )reference).

When the exposure of the unnecessary resist on the circumferential portion of the wafer W is completed in this way, the portion where the circumferential portion of the wafer W and the other end of the orientation flat are in contact is the inclined side 47 of the mask 45.
(See FIG. 8B). At this time, the mask 45
Is in contact with the resist cut edge of the orientation flat. In this state, while rotating the wafer W, for example, moving the mounting table 21, that is, the wafer W in the direction of the light irradiation unit 40, and irradiating the UV light while relatively linearly moving the light irradiation unit 40 and the orientation flat Wa unit. And Ori-Fla W
By exposing the unnecessary resist in the portion a, the exposure of the unnecessary resist in the peripheral portion of the wafer W is completed (see FIG. 8C).

As described above, the wafer W, which has been exposed to UV light over a certain width in the peripheral portion, is placed on the resist coating device 1
The unnecessary resist is removed by being transported from 3 to the developing device 8 and developed. As a result, as shown in FIG. 9, the inner peripheral edge portion Wb in the peripheral portion of the circular portion and the orientation flat Wa portion of the wafer W is sharply cut, and unnecessary resist is removed without remaining resist. In addition, unnecessary resist can be sharply cut without causing a "slope width" in the orientation flat Wa portion. Furthermore, even when the trench coat h is dug in the wafer W, there is no remaining resist in the peripheral portion of the wafer W. Therefore, when the trench coat h is etched, the peripheral portion of the wafer W is not etched. (See FIG. 10).

In the above embodiment, the pattern of the mask 45, that is, the light irradiation shape extends outward at an angle θ from the inner side 46 in contact with the peripheral edge Wb on the center side of the wafer W and both ends of the inner side 46. The hexagonal shape having the inclined side 47 has been described.
7 may have a trapezoidal shape as indicated by imaginary lines in FIG. The inclined side 47 is not necessarily 2
There is no need to provide one, and it may be provided at one end of the inner side 46.

In the above embodiment, the wafer W is rotated by the rotation of the mounting table 21 to irradiate the periphery of the circular portion of the wafer W with UV light from the light irradiating means 40, and the orientation flat Wa
In the section, the wafer W is moved in the direction of the light irradiating means 40 to irradiate the UV light from the light irradiating means 40 while the light irradiating means 40 is fixed and the wafer W is rotated. The light irradiating means 40 is moved to the circular portion of the wafer W, and the light
The light irradiation may be performed, or both the wafer W and the light irradiation unit 40 may be moved to irradiate the orientation flat Wa unit with the UV light from the light irradiation unit 40.

Further, in the above embodiment, when exposing the orientation flat portion, the mask 45 is placed in a state where the inclined side 47 is arranged so as to be in contact with the resist cut edge portion of the orientation flat portion.
Although the example in which the V light is irradiated has been described, the light irradiation drive unit 4
0A is further provided with a θ rotation mechanism of the light irradiating means.
May be controlled so as to be in a state parallel to the above-described resist cut edge portion, and may be irradiated with UV light.

In the above embodiment, the case where the exposure apparatus of the present invention is incorporated in a coating / developing system for a semiconductor wafer has been described. However, the exposure apparatus of the present invention can be used as a single apparatus. . Also,
In the above embodiment, the case where the object to be processed is a semiconductor wafer has been described. However, the exposure apparatus of the present invention can be similarly used in processing other than a semiconductor wafer as long as the object has a circular shape having a flat notch in the periphery. Of course you can.

[0044]

As described above, according to the exposure apparatus of the present invention, the light irradiation shape of the light irradiating means can be changed from the inner side located at the periphery of the object to be processed and the end of the inner side. Light illuminating shape with inclined sides that expand outward at a predetermined angle
The angle (θ) with respect to the line tangent to the inner side of the
When the radius (R) of the processing body and the length (P) of the notch are defined as
It should be set based on θ = sin ^-1 (P / 2) / R.
Since the symptom, the peripheral portion of the circular portion and the flat cutout portion of the specimen can be sufficiently and uniformly exposed in a short time, it is possible to prevent the resist remaining due exposure failure. In addition, it is possible to prevent the resist remaining due to poor exposure at the flat notch portion of the object to be processed, and to remove the “droop width” to sharply remove unnecessary resist.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing a semiconductor wafer coating / developing system incorporating an exposure apparatus of the present invention.

FIG. 2 is a schematic perspective view of the exposure apparatus of the present invention.

FIG. 3 is a schematic sectional view of a light irradiation unit in the present invention.

FIG. 4 is a schematic plan view showing a light irradiation shape of a light irradiation unit.

FIG. 5 is an explanatory diagram for obtaining an angle of an inclined side in a light irradiation shape.

FIG. 6 is an explanatory diagram showing another form of the light irradiation shape.

FIG. 7 is a graph showing a relationship between an exposure amount and an irradiation length.

FIG. 8 is a schematic plan view showing an exposure procedure of the exposure apparatus of the present invention.

FIG. 9 is an enlarged cross-sectional view showing a state where unnecessary resist has been removed by exposure.

FIG. 10 is another enlarged cross-sectional view showing a state where unnecessary resist has been removed by exposure.

FIG. 11 is a graph showing the relationship between the UV intensity and the distance from the center of the UV illuminance distribution.

FIG. 12 is a schematic plan view showing a conventional exposure state.

FIG. 13 is an enlarged sectional view showing a state where unnecessary resist is removed by conventional exposure.

FIG. 14 is an enlarged sectional view showing another state of removing unnecessary resist by conventional exposure.

[Explanation of symbols]

 Reference Signs List 21 mounting table 30 orientation flat detection means 40 light irradiation means 45 mask (light irradiation shape) 46 inner side 47 inclined side 48 arc surface 50 control unit W semiconductor wafer (object to be processed) Wa orientation flat Wb inner peripheral edge La length of inner side 46 Length Lb Length of inclined side 47

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/027 G03F 7/20

Claims (3)

(57) [Claims] An exposure apparatus for relatively exposing an object to be processed and a light irradiating means to expose a peripheral portion of the object to be processed over a predetermined width, wherein the light irradiating means emits light. shape, and an inner side located on the periphery of the object to be processed, comprising an inclined edges diverging at a predetermined angle outwardly from the end portion of the inner edge, the inner edge of the inclined side of the light illumination profile Corner to line tangent to
Degree (θ) is the radius (R) of the object to be processed, the length of the notch
An exposure apparatus characterized in that, when (P) is set, θ is set based on θ = sin ⁻¹ (P / 2) / R. 2. An exposure apparatus for relatively moving a workpiece and an ultraviolet light irradiating means to expose a peripheral portion of a resist applied on the surface of the workpiece over a predetermined width. The light irradiation shape of the light irradiation means includes an inner side located at a peripheral portion of the object to be processed, and an inclined side that expands outward at a predetermined angle outward from an end of the inner side, The length of the side is 1.5 to 3.5 mm, and the angle with respect to a line that is in contact with the inner side of the inclined side of the light irradiation shape.
Degree (θ) is the radius (R) of the object to be processed, the length of the notch
An exposure apparatus characterized in that, when (P) is set, θ is set based on θ = sin ⁻¹ (P / 2) / R. 3. The exposure apparatus according to claim 1, wherein the inner side has a curvature approximating the circumference of a circle centered on the center of the object to be processed.