JP2565909C - - Google Patents
Info
- Publication number
- JP2565909C JP2565909C JP2565909C JP 2565909 C JP2565909 C JP 2565909C JP 2565909 C JP2565909 C JP 2565909C
- Authority
- JP
- Japan
- Prior art keywords
- laser
- layer
- output
- quantum well
- resonator length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 36
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims 1
- 230000003287 optical Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 210000000088 Lip Anatomy 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 125000005842 heteroatoms Chemical group 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Family
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