JP2561467B2 - Wafer carrier - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Object of the Invention [Industrial field of use] The present invention relates to a wafer transfer apparatus, and more particularly to a semiconductor wafer for aligning the center of a disk-shaped semiconductor wafer with the rotation axis of a spin coater. The present invention relates to a wafer transfer device for mounting a wafer on a rotating shaft of a spin coater.

[Prior Art] Conventionally, as a wafer transfer device of this type, a semiconductor wafer transferred from a wafer accommodating member by a belt conveyor is sucked by a suction means at a predetermined position on the belt conveyor to lift it from the belt conveyor by a spin coater. The structure of transferring on the rotating shaft of the above was proposed.

[Problems to be Solved] However, in the conventional wafer transfer apparatus, the semiconductor wafer is directly adsorbed by the adsorbing means on the belt conveyor and transferred toward the rotary shaft of the spin coater. The semiconductor wafer has a defect that it is misaligned during adsorption, and the center of the semiconductor wafer cannot be aligned with the rotation axis of the spin coater. There is also a drawback that the semiconductor wafer is scattered and damaged during rotation by the spin coater.

Therefore, the present invention, in order to solve these problems,
The center of the semiconductor wafer is transferred to the spin shaft of the spin coater together with the wafer holding member while the semiconductor wafer transferred from the wafer holding member by the belt conveyor is directly received by the recess of the wafer holding member and pressed and held by the holding lever. It is intended to provide a wafer transfer device in which is aligned with the rotation axis of the rotation shaft.

[Means for Solving Problems] Means for solving the problems provided by the present invention include: “A wafer transfer device for transferring a semiconductor wafer transferred from a wafer accommodating member by a belt conveyor so as to be placed on a rotating shaft of a spin coater. In (a), a wafer including a recessed portion that is in contact with the front peripheral surface of the semiconductor wafer and a holding lever that presses and holds the rear peripheral surface of the semiconductor wafer against the recessed portion. A holding member, and (b) moving the wafer holding member holding the wafer by the recess and the holding lever toward the spin coater, and the center of the semiconductor wafer held in the recess and the rotation axis of the rotating shaft. And a moving means for stopping at a position aligned with each other ". Another means for solving the problems provided by the present invention is, "A wafer transfer device for transferring a semiconductor wafer transferred from a wafer accommodating member by a belt conveyor so as to be placed on a rotating shaft of a spin coater, (a) A recess that abuts against the peripheral surface of the semiconductor wafer, a holding lever that presses and holds the semiconductor wafer against the recess, and a semiconductor wafer that is mounted on the rotation shaft and that holds the semiconductor wafer And (b) moving the wafer holding member toward the spin coater, and receiving the semiconductor wafer mounted on the rotary shaft in the other recess. The semiconductor wafer held in the concave portion and the rotation axis of the rotation shaft are aligned with each other. It is the wafer transfer device ", characterized in that a moving means allowed to stop.

[Operation] The wafer transfer device according to the present invention receives the semiconductor wafer transferred from the wafer accommodating member by the belt conveyor, holds the semiconductor wafer in the recess of the wafer holding member by the holding lever, and moves the wafer holding member by the moving means. It functions to stop the center of the semiconductor wafer held in the recess of the wafer holding member at the position aligned with the rotation axis of the spin coater rotation shaft, and aligns the center with the rotation axis of the spin coater rotation shaft. The effect of removing the coating unevenness of the diffusion source solution or the photoresist by the spin coater and the effect of preventing the semiconductor wafer from scattering accidents when the spin coater rotates are eventually achieved.

Further, another wafer transfer apparatus according to the present invention receives the semiconductor wafer transferred from the wafer accommodating member by the belt conveyor, holds the semiconductor wafer in the recess of the wafer holding member by the holding lever, and moves the wafer holding member by the moving means. The center of the semiconductor wafer held in the recess of the wafer holding member is stopped at a position aligned with the rotation axis of the spin shaft of the spin coater, and the semiconductor wafer on the rotating shaft is received and held by another recess of the wafer holding member and transferred. In addition to the above-mentioned function, the semiconductor wafer can be efficiently transferred from above the rotating shaft without damage.

EXAMPLES Next, the present invention will be specifically described with reference to the accompanying drawings.

FIG. 1 is a vertical cross-sectional view mainly showing the embodiment of the wafer transfer apparatus of the present invention taken along the line I-I, and also shows a spin coater and a subsequent heat treatment apparatus.

FIG. 2 is a cross-sectional view mainly taken along line II-II showing the embodiment shown in FIG. 1, and similarly to FIG. 1, a spin coater and a subsequent heat treatment apparatus are also shown.

FIG. 3 is a vertical cross-sectional view taken along line III-III showing the subsequent heat treatment apparatus partially shown in FIGS. 1 and 2.

FIG. 4 mainly shows the heat treatment apparatus of FIG.
It is the cross-sectional view which followed the line.

FIG. 5 is a plan view showing the heat treatment apparatus of FIGS. 3 and 4.

First, the configuration of the wafer transfer device of the present invention will be described in detail.

10 is a wafer transfer apparatus of the present invention, both end portions are supported by support members 11A, 11B, respectively, and guide shafts 12A, 12B extended in parallel to each other in the horizontal direction, and one end portion with respect to the guide shaft 12A. Guide shafts 13A and 13B that are respectively mounted so as to be guided and extend in parallel with each other in the vertical direction, and one ends of the guide shafts 13A and 13B that are respectively guideably attached to and extend in parallel with each other in the vertical direction. And the guide shafts 14A and 14B that are formed. At the other end of the guide shafts 13A, 13B and 14A, 14B,
A support base 15 is mounted so that it can be guided. Guide shaft
Other support bases 16A and 16B are fixed to the intermediate portions of 13A, 13B and 14A, 14B, respectively.

On the lower surface of the support base 15, suspension shafts 17A, 17B and 1
A wafer holding member, for example, a wafer holding substrate 19, 20 made of an appropriate material, for example, Teflon, which does not impair the quality of the semiconductor wafer 31, is provided via 8A, 18B. The wafer holding substrates 19 and 20 extend in the direction of extension of the guide shafts 12A and 12B, respectively, and are spaced apart from each other by a predetermined distance (that is, a rotating shaft of a spin coater 40 described later).
41 (a distance larger than the diameter of 41).

A wafer holding portion 21 for holding a disc-shaped semiconductor wafer 31 is formed at one end of each of the wafer holding substrates 19 and 20. That is, at one end of the wafer holding substrate 19, 20, recessed portions 19A, 20A which are simultaneously contacted with a part of the peripheral surface of the disk-shaped semiconductor wafer 31, for example, 1/8, are formed facing each other, respectively. It is formed of an appropriate material such as Teflon that does not impair its quality for holding the semiconductor wafer 31 against the recesses 19A, 20A by pressing the remaining portion of the peripheral surface of the semiconductor wafer 31 that is in contact with the recesses 19A, 20A. Retaining levers 19B and 20B are provided. The holding levers 19B and 20B are driven by appropriate driving means such as an air cylinder (not shown) provided on the support bases 16A and 16B and communicated with an external pressurized air source (not shown). You. At the other end of the wafer holding substrates 19 and 20, another wafer holding portion 22 for holding a disc-shaped semiconductor wafer 31 is formed. That is, at the other ends of the wafer holding substrates 19 and 20, concave portions 19C and 20C, which are simultaneously in contact with a part of the peripheral surface of the disk-shaped semiconductor wafer 31, for example, 1/8, are formed facing each other. Moreover, convex portions 19D and 20D that hold the lower surface of the semiconductor wafer 31 that are in contact with the concave portions 19C and 20C are formed facing each other. Recesses 19A, 20A on wafer holding substrate 19, 20
And 19C, 20C, if a taper is formed on the upper edge, the semiconductor wafer with respect to the rotating shaft 41 of the spin coater 40
It is preferable because the transfer of 31 can be performed smoothly.

On the support bases 16A and 16B, the support base 15 is
Appropriate driving means for moving up and down along 3A, 13B, 14A and 14B, for example, air cylinders 23A and 23B are provided, respectively. Driving means 23A and 23B are driven rods 24A and 24B, respectively.
And is connected to the support base 15 via the. Guide shaft 14
One end of A is connected to a suitable driving means such as an air cylinder 25.
Of the guide shaft 14A
Consequently, the support bases 15, 16A, 16B and the wafer holding substrates 19, 20 provided for the guide shafts 13A, 13B, 14A, 14B.
Are movable along the guide shafts 12A and 12B. The guide shafts 12A and 12B and the driving unit 25 function as a moving unit of the wafer holding member, for example, the wafer holding substrates 19 and 20.

30 is a wafer supply device for supplying a semiconductor wafer 31 to the wafer transfer device 10 of the present invention, a wafer accommodation member 32 that accommodates a plurality of semiconductor wafers 31 in a horizontal direction at predetermined intervals, and a wafer accommodation device. When the members 32 are held and intermittently lowered by a distance corresponding to the accommodation interval of the semiconductor wafers 31, the elevator device 33 and the semiconductor wafers 31 are taken out one by one from the wafer accommodation member 32 and the wafer holding unit 21 of the wafer transfer device 10. It includes a belt conveyor 34 formed of an appropriate material such as Teflon, which does not impair the quality of the semiconductor wafer 31 to be transferred to. The belt conveyor 34 is an elevator device 33.
Of the shaft 36 installed between the columns 35, 35 installed near the column, and between the columns 37, 37 installed near one end of the guide shafts 12A, 12B, and an appropriate drive It is stretched between a shaft 38 connected to a means such as an electric motor (not shown).

Reference numeral 40 denotes a spin coater disposed between the guide shafts 12A and 12B. The spin coater is mounted on the support member 41A via a bearing 41B and drives the gear 41C by an appropriate driving means such as an electric motor (not shown). The rotating shaft 41 to be rotated and the support member 42A are moved up and down by driving appropriate driving means, for example, an electric motor (not shown), and the top of a shaft portion 42B disposed around the rotating shaft 41. Formed semiconductor wafer 3
And a cover member (42) having a cover (42C) for collecting the diffusion source solution or the photoresist which is scattered from 1. The rotary shaft 41 is provided with a through-hole 44 opened in the upper end surface 41a and communicated with one end of the tubular body 43 at the lower end surface 41b in the extension direction. Tube 43
Is connected to an external suction source such as a vacuum pump (not shown). The cover member 42 has a bottom surface, that is, an opening at the upper end surface 42a of the shaft portion 42B and a shaft portion 42B.
A discharge hole 46 communicated with one end of the pipe body 45 at the lower end surface 42b of 42B.
Has been drilled. The other end of the tube 45 is communicated with an appropriate collection container (not shown), and collects the diffusion source solution or the photoresist collected by the cover 42C of the cover member 42.

Reference numeral 47 denotes a drip device for a diffusion source solution or photoresist, which is arranged outside the guide shaft 12B.The air end is pivotally supported on the top of the support column 48 and the free end is rotated above the rotating shaft 41. It includes a rotatable arm 49 that is movable, and a drip nozzle 50 that is arranged downward with respect to the free end of the rotatable arm 49. The dripping nozzle 50 is
Also, it is communicated with a supply source (not shown) such as a diffusion source solution or a photoresist through an appropriate pipe body (not shown) provided in the column 48. The diffusion source solution is a liquid obtained by dissolving a compound such as phosphorus or boron that functions as a diffusion source in a solvent such as alcohol, and can form a coating film of several 100 to several 1,000 Å on the semiconductor wafer 31 after heat treatment. As described above, the dropping is performed by the dropping nozzle 50.

Reference numeral 60 denotes a heat treatment device which follows the spin coater 40 and heats and dries a diffusion source solution or photoresist to bring it into close contact with the semiconductor wafer 31, and to the vicinity of the other ends of the guide shafts 12A and 12B. It has a heating furnace, for example, an electric furnace 61, having an opening at the inlet of the heating space 62. At least three, for example, 4
A plurality of through holes 62A (hereinafter, this case will be described) as one set are provided at predetermined intervals from the inlet to the outlet of the heating space 62.

Reference numeral 63 denotes a lifting device for the semiconductor wafer 31, which is arranged below the heating furnace 61, and is a substrate which is vertically moved toward the bottom surface of the heating furnace 61, that is, the heating surface, by an appropriate driving means such as an electric motor (not shown). 63A and four through holes 62A corresponding to the number of through holes 62A on the upper surface of the substrate 63A are set at a predetermined interval, that is, through holes 62.
A plurality of columns 63B arranged at the same intervals as A, and a column 63B
A plurality of semiconductor wafers 31 that are detachably implanted to the top of the semiconductor wafer 31 if desired and that are inserted into the through holes 62A as the substrate 63A moves upward and are placed on the bottom surface of the heating furnace 61. It has a support pin 63C and. The support pins 63C are made of an appropriate material that does not damage the semiconductor wafer 31 during heat treatment and does not impair the quality of the semiconductor wafer 31 after heat treatment, such as metal coated with Teflon or quartz glass for preventing oxidation. Is preferred. Only one set of the support pins 63C is provided outside the entrance of the heating space 62, and the through hole of the receiving table 64, which is narrower than the space between the wafer holding members, for example, the wafer holding substrates 19 and 20, is provided. Inserted into 64A. As a result, the spin coater 40 applies the solution of the diffusion source or the photoresist by dripping, and then the wafer is held and transferred by the wafer holding unit 22 of the wafer transfer device 10 and is transferred to the receiving table 64 in the following manner. The semiconductor wafer 31 placed on the substrate is lifted.

Reference numeral 65 denotes an intermittent transfer device for moving to the intermittent droplets of the semiconductor wafer 31 in the heating space 62 of the heating furnace 61. The intermittent transfer device is extended to the heating space 62 from its inlet portion to its outlet portion, and is closely spaced from each other. It includes first and second transfer halves 66,67. The transfer half 66 has a heating space 62 in the upper part of the heating furnace 61.
The base part extended from the inlet part to the outlet part in parallel with
66A, both ends of the base 66A are connected to both ends via connecting portions 66B, and a supporting body 66C extending from the inlet to the outlet in the heating space 62, and a supporting body 66C
For example, support means for holding the semiconductor wafer 31 lifted by the support pins 63C, for example, two sets are implanted as a set at a predetermined interval, that is, the same interval as the through-hole 62A, and a support claw, for example. 66D. The transfer half 67 is located above the heating furnace 61 in the heating space.
A base portion 67A extended from the inlet portion toward the outlet portion in parallel with 62, and both end portions thereof are connected to both end portions of the base portion 67A via connecting portions 67B, respectively, from the inlet portion in the heating space 62. A support main body 67C extended toward the outlet portion and, for example, two pieces are planted as a set at a predetermined interval with respect to the support main body 67C, that is, at the same interval as the through hole 62A drilling interval. Lifted semiconductor wafer 31
And a supporting means for holding the supporting claw 67D.

The supporting means, for example, the supporting claws 66D and 67D are coated with a suitable material which does not damage the semiconductor wafer 31 during the heat treatment and does not impair the quality of the semiconductor wafer 31 after the heat treatment, like the support pins 63C, for example, is coated with Teflon to prevent oxidation. It is preferable to be made of a metal or quartz glass.
Further, the supporting means such as the supporting claws 66D and 67D preferably have at least one portion, for example, a horizontal portion, which is in contact with the lower surface of the semiconductor wafer 31. It is preferable to include at least one portion to be contacted, for example, a horizontal portion (the interval between the portions is preferably slightly larger than that of the semiconductor wafer 31). In addition, supporting means such as supporting claws 66D, 67D
It is preferable that the structure does not contact the peripheral surface of the. Further, it is particularly preferable that the support means, for example, the support claws 66D, 67D be detached from the support main bodies 66C, 67C at the time of breakage or the like and formed so that new support means, for example, the support claws 66D, 67D can be replaced.

68 is a driving means of the intermittent transfer device 65, a guide shaft 68B whose both ends are respectively supported by the support body 68A and which extends from the inlet to the outlet in parallel with the heating space 62 above the heating furnace 61. A power source 68C such as an air cylinder mounted on the guide shaft 68B and moving along the guide shaft 68B, and transfer halves 66, 6 via the power source 68C.
7 bases 66A, 67A are connected together and base 66
It includes a connecting body 68D for keeping A and 67A close to each other. Reference numeral 69 denotes a cooling stand arranged outside the outlet of the heating space 62, which has the same height as the bottom surface of the heating furnace 61.
Similar to the bottom surface of 61, a set of four through holes 69A is formed. Correspondingly, the support pins 63C that are inserted into the through holes 69A and lift up the semiconductor wafer 31 are the support columns on the substrate 63A.
It has been planted for 63B. Support bodies 66C, 67C of the transfer halves 66, 67 included in the intermittent transfer device 65 are provided with support means, for example, support claws 66D, 67D, respectively, for example as a set of two support pins 66D, 67D. Cooling stand 6 by 63C
The semiconductor wafer 31 lifted from 9 is held.

Reference numeral 70 denotes a wafer discharging device for receiving and discharging the semiconductor wafer 31 which has been heat-treated from the heat treatment device 60 , and a cooling table 69.
It has a belt conveyor 71 formed of an appropriate material, such as Teflon, which does not impair the quality of the semiconductor wafer 31 for receiving and transferring the semiconductor wafer 31 transferred at one end by the intermittent transfer device 65. The belt conveyor 71 has a shaft 73 disposed between the columns 72, 72 disposed near the cooling tower 69, and a shaft 73 disposed between the other columns 74, 74 and appropriate driving means, for example. It is stretched between a shaft 75 connected to an electric motor (not shown). Reference numeral 76 denotes a wafer accommodating member disposed near the other end of the belt conveyor 71, and the semiconductor wafers 31 transferred by the belt conveyor 71 are sequentially accommodated from the other end. 77 is an elevator device, and a wafer accommodation member 76
And rises intermittently each time the semiconductor wafer 31 is accommodated.

Further, the operation of the wafer transfer device of the present invention will be described in detail.

After the elevator device 33 of the wafer transfer device 30 is raised to the uppermost position, the wafer accommodating member 32 is installed in the elevator device 33. When the wafer accommodating member 32 is slightly lowered in the direction of arrow A by the elevator device 33, the lowermost semiconductor wafer 31 is brought into contact with the surface of one end of the belt conveyor 34, and moves in the direction of arrow B with the movement of the belt conveyor 34. Taken out. The semiconductor wafer 31 taken out from the wafer accommodating member 32 is moved or conveyed by the belt conveyor 34 to the wafer holding unit 21 of the wafer conveyance device 10 . In the wafer holding section 21, the semiconductor wafer 31 is brought into contact with the recesses 19A, 20A on the front peripheral surface of the semiconductor wafer 31 by the belt conveyor 34, and then the holding levers 19B, 2
0B is rotated in the directions of arrows C ₁ and C ₂ . As a result, the rear peripheral surface of the semiconductor wafer 31 is held by the holding levers 19B, 20B.
Is pressed against the recesses 19A, 20A by the semiconductor wafer 3
1 is reliably held by the wafer holding portion 21, and as a result, no positional deviation occurs during the subsequent transfer.

By the driving means 25 connected to one end of the guide shaft 14A, the wafer transfer device 10, that is, the guide shaft 14A
The guide shafts 13A, 13B, 14A, 14B and the supporting bases 15, 16A, 16B mounted on these guide shafts 12A,
Follow 12B and move in the direction of arrow D ₁ . Wafer holder 2
When 1 reaches the spin coater 40 and the semiconductor wafer 31 is located immediately above the rotating shaft 41, the movement of the wafer transfer device 10 is stopped. At this time, the center of the semiconductor wafer 31 is
It is aligned with the rotation axis of the rotation shaft 41. The drive means 23A, 23B on the support bases 16A, 16B are operated, and the support base 15 is lowered along the guide shafts 13A, 13B, 14A, 14B via the drive rods 24A, 24B. In response, the wafer holding members, that is, the wafer holding substrates 19 and 20 are also lowered, and the semiconductor wafer held by the wafer holding unit 21 is moved.
The lower surface of 31 reaches near the upper end surface 41a of the rotating shaft 41. The holding levers 19B and 20B are opened, and the semiconductor wafer 31
Is placed on the upper end surface 41a of the rotating shaft 41, and then the pipe 4
When suction is started by an external suction source through 3 and through hole 44, semiconductor wafer 31 is moved to upper end surface 41a of rotating shaft 41.
Adsorbed against. After that, the support base 15 and the wafer holding substrates 19 and 2 are further lowered, and the wafer holding substrates 19 and 2 are
The upper surface of 0 is located below the lower surface of the semiconductor wafer 31 attracted to the upper end surface 41a of the rotating shaft 41.

Since the semiconductor wafer 31 is not held in the wafer holding unit 22 of the wafer transfer device 10 , the semiconductor wafer 31 is not placed on the receiving table 64, and in this state, the heating furnace 61 is still operated by the intermittent transfer device 65. Inside or heating space
The semiconductor wafer 31 is not transferred to 62. Therefore, for the sake of brevity, the lifting device 63 here
The description of the operation of the heat treatment device 60 and the subsequent components including the intermittent transfer device 64 will be omitted.

Wafer transfer apparatus 10, the guide shaft 12A, along the 12B is moved in the arrow D ₂ direction and is returned to the original position through the vicinity of the spin coater 40. Then support bases 16A, 16
Drive means 23A and 23B on B are operated, and drive rods 24A and
The support base 15 is guided through the guide shafts 13A, 13B, 14A, 14B via 24B.
It is possible to rise quickly. As a result, the wafer holding substrates 19 and 20 are also raised, so that the next semiconductor wafer 31 can be received from the wafer supply device 30 .

Next, the rotating arm 49 of the dropping device 47 is rotated by the rotating shaft 41.
Of the semiconductor wafer 31 on which a predetermined amount of a diffusion source solution or a photoresist is adsorbed on the rotating shaft 41 from a dropping nozzle 50 at a free end thereof. Is dropped. Drip nozzle 50
When the diffusion source solution or the photoresist is dropped from the above, the rotating arm 49 is rotated again to return to the initial position. Thereafter the cover member 42 is raised in direction of arrow F _1, surrounding the periphery of the semiconductor wafer 31 is attracted to the upper end face 41a of the rotary shaft 41 with a cover 42C. By rotating the rotating shaft 41 by a suitable driving means via the gear 41C, the dropped diffusion source solution or photoresist is applied to the upper surface of the semiconductor wafer 31 with a uniform thickness. The rotation of the rotating shaft 41 causes the semiconductor wafer
The diffusion source solution or the photoresist scattered from the upper surface of the base 31 is collected by the cover 42C and collected in a collecting container (not shown) through the through-hole 46 and the tube 45 opened in the bottom surface 42a. . If the diffusion source solution or applied, such as a photoresist is completed, the rotation of the rotary shaft 41 is stopped, the cover member 42 is lowered in the arrow F ₂ direction.

In parallel with the operation of applying the diffusion source solution or the photoresist to the semiconductor wafer 31 by the spin coater 40 , the next semiconductor wafer 31 is held by the wafer holding unit 21 of the wafer transfer device 10 in the same manner as described above.

When the application of the diffusion source solution or the photoresist by the spin coater 40 is completed, the through hole 44 and the tube
The upper end of the rotating shaft 41 of the semiconductor wafer 31 via 43
The suction to 41a is cut off, and the wafer transfer device 10
Is moved in the direction of arrow D ₁ by the guide shafts 12A and 12B in the same manner as described above. Wafer holding unit of wafer transfer device 10
The convex portions 19D, 20D of 22 are moved in the direction of arrow D ₁ at a predetermined interval along the lower surface of the semiconductor wafer 31 mounted on the upper end surface 41a of the rotating shaft 41, and as a result, the diffusion source by the spin coater 40. The peripheral surface of the semiconductor wafer 31 coated with the solution or photoresist is the recess 19 of the wafer holder 22.
The semiconductor wafer 31 is brought into contact with C and 20C, whereby the semiconductor wafer 31 is moved from the upper end surface 41a of the rotating shaft 41 to the wafer holding portion 22. Wafer transfer apparatus 10 continues to be moved in the arrow D ₁ direction, the wafer holder 21 is stopped to be reached to just above the rotary shaft 41. Support base of wafer transfer device 10
Since the 15 and the wafer holding substrates 19 and 20 are lowered in a state where the center thereof is aligned with the rotation axis of the rotation shaft 41 as described above, the next semiconductor wafer 31 is appropriately placed on the upper end surface 41a of the rotation shaft 41. And is adsorbed by an appropriate adsorption source through the tube body 43 and the through hole 44.

The semiconductor wafer 31 held by the wafer holding unit 22 of the wafer transfer device 10 is transferred onto the receiving table 64 as the supporting base 15 and the wafer holding substrates 19, 20 are lowered. That is, the surface of the receiving table 64 is substantially the same height as the upper end surface 41a of the rotating shaft 41, and the lateral width of the receiving table 64 is narrower than the distance between the wafer holding members, for example, the wafer holding substrates 19 and 20. Therefore, the receiving base 64 enters between the wafer holding substrates 19 and 20 as the supporting base 15 and the wafer holding substrates 19 and 20 descend, and the receiving base 64 holds the semiconductor wafer held by the wafer holding portion 22. The lower surface of 31 is supported and the semiconductor wafer 31 is received.

The wafer transfer device 10 is moved in the direction of arrow D ₂ and returned to the initial state in the same manner as described above.

The lifting device 63 is raised in the direction of arrow G ₁ and its supporting pin 63
Of the C, the one located outside the entrance of the heating furnace 61 is the receiving stand 6
4 is inserted into the through hole 64A. As a result, the semiconductor wafer 31 placed on the receiving table 64 is not supported by the supporting pins 63C of the lifting device 63.
Is placed and supported on the top of the.

When the semiconductor wafer 31 is placed on the support pins 63C of the lifting device 63, the moving means 68 of the intermittent transfer device 65 is operated.
That is, the transfer half 6 is driven by the power source 68C and the connecting body 68D.
6,67 of the base 66A, 67A is moved in the arrow H ₁ direction are close to each other. Support body 66C, 67C as base 66A, 67A approaches
Also moved in the arrow H ₁ direction are close to each other. As a result, the support means, for example, the support claws 66D and 67D advance below the semiconductor wafer 31 placed on the support pins 63C. Lifting equipment 63
When There is lowered in the arrow G ₂ direction, the semiconductor wafer 31 placed on the support pin 63C is support means for example supporting pawls 66D, 67D
Moved up.

When the power source 68C is moved by a predetermined distance in the arrow I ₁ direction along the guide shaft 68B, the transfer half 66 and 67 is also moved by a predetermined distance in the arrow I ₁ direction. When lifting device 63 in this state is again raised to the arrow G ₁ direction, the semiconductor wafer 31 is supported by the inserted through a support pin 63C to the nearest through-hole 62A in the inlet of the heating furnace 61. Transfer half 66 by power source 68C,
67, an arrow H ₂ after being spaced apart from each other toward the direction, is further returned to the original position is moved in the arrow I ₂ direction. When Thereafter lifting device 63 is lowered in the arrow G ₂ direction, the support pin 63C
The upper semiconductor wafer 31 is directly placed on the bottom surface of the heating furnace 61, that is, on the heating surface, and heat-treated efficiently. As a result, the diffusion source solution or photoresist applied by the spin coater 40 is heated and dried, and
It is closely attached to the surface of 31.

Each time the semiconductor wafer 31 is transferred from the spin coater 40 by the wafer holder 22 of the wafer transfer device 10, the lifting device 63 and the intermittent transfer device 65 repeat the above-described operation, so that the semiconductor wafer 31 is placed in the heating furnace 61. Is intermittently transferred at a predetermined distance, that is, at intervals of forming the through holes 62A on the bottom surface.

Semiconductor wafer 31 transferred to the outlet of heating furnace 61
Is cooled by a lifting device 63 and an intermittent transfer device 65.
After being once placed on the upper side, it is further transferred from the cooling stand 69 onto one end of the belt conveyor 71 of the wafer discharge device 70 .

The semiconductor wafer 31 placed on the belt conveyor 71 is
The wafer is transferred in the direction of arrow J, and at the other end the wafer storage member
Housed in 76. The wafer accommodating member 76 is intermittently raised in the arrow K direction by the elevator device 77 every time the semiconductor wafer 31 is accommodated. When the accommodation space of the wafer accommodating member 76 is filled with the semiconductor wafer 31, it is removed from the elevator apparatus 77, and a new wafer accommodating member is
Replaced with 76. The elevator device 77 is lowered to the initial position, and the above operation is repeated again.

By repeating the above operation, the semiconductor wafer 31 accommodated in the wafer accommodating member 32 is sequentially transferred to the spin coater 40 by the wafer transfer device 10 , and the diffusion source solution or photoresist is applied by the spin coater 40. After that, the wafer is again transferred from the spin coater 40 to the heat treatment device 60 by the wafer transfer device 10 , and the heat treatment device 60
Then, the wafer is appropriately heat-treated, and then housed in another wafer housing member 76.

In the above description, the wafer holder 22 of the wafer transfer device 10 receives the semiconductor wafer 31 on the rotation shaft 41 of the spin coater 40 and transfers it to the subsequent heat treatment device 60 , but the present invention is not limited to this. Instead, the semiconductor wafer 31 may be transferred from the rotating shaft 41 toward the subsequent heat treatment apparatus 60 by other means.

The semiconductor wafer 31 is transferred with respect to the rotation shaft 41 of the spin coater 40 by lifting the support base 15 and the wafer holding member for example wafer holding substrate 19, 20 of the wafer transfer device 10, and the wafer transfer device 10 is a wafer supply When returning to the vicinity of device 30 , spin coater
Although contact with the wafer 40 is avoided, the present invention is not limited to this, and the semiconductor wafer 31 is transferred to and from the wafer transfer apparatus 10 by elevating and lowering the rotating shaft 41 of the spin coater 40 , for example. In addition, contact with the wafer transfer device 10 may be avoided.

(3) Effects of the Invention As is clear from the above, the wafer transfer apparatus according to the present invention is a wafer transfer apparatus for transferring a semiconductor wafer transferred from a wafer accommodating member by a belt conveyor so that it can be placed on the rotating shaft of a spin coater. And (a) including a recess that is in contact with the front peripheral surface of the semiconductor wafer and a holding lever that presses and holds the rear peripheral surface of the semiconductor wafer against the recess. And (b) moving the wafer holding member holding the wafer by the recess and the holding lever toward the spin coater, and rotating the center of the semiconductor wafer held in the recess and the rotation shaft. (I) A rotating shaft of the spin coater, since the moving means for stopping at a position aligned with the axis is provided. It has the effect of placing the semiconductor wafer with the center aligned with the center of rotation, and by extension (ii) the effect of removing uneven coating solution such as the diffusion source solution or photoresist by the spin coater, and (iii) the rotation by the spin coater. This has the effect of preventing scattering accidents of semiconductor wafers.

Another wafer transfer apparatus according to the present invention is a wafer transfer apparatus for transferring a semiconductor wafer transferred from a wafer accommodating member by a belt conveyor so as to be placed on a rotary shaft of a spin coater, wherein: (a) the semiconductor A recess that abuts against the peripheral surface of the wafer, a holding lever that presses and holds the semiconductor wafer against the recess, and another recess that receives and holds the semiconductor wafer mounted on the rotating shaft. And (b) the wafer holding member is moved toward the spin coater, and the semiconductor wafer mounted on the rotary shaft is received and held by the other recess. Then, stop at a position where the center of the semiconductor wafer held in the recess and the rotation axis of the rotation shaft are aligned. Since and a Mel moving means has the effect of transferring efficiently without damaging the semiconductor wafer from above (i) ~ in addition to the effects of (iii) (iv) spin coater rotating on the shaft.

[Brief description of drawings]

1 is a longitudinal sectional view mainly taken along line I-I showing an embodiment of the present invention, FIG. 2 is a horizontal sectional view taken mainly along line II-II, and FIG. FIG. 4 is a vertical sectional view taken along line III-III shown in FIG. 4, FIG. 4 is a horizontal sectional view taken mainly along line IV-IV, and FIG. 10 Wafer transfer device 11A, 11B Support 12A, 12B, 13A, 13B, 14A, 14B Guide shaft 15, 16A, 16B Support base 17A, 17B, 18A, 18B Hanging shaft 19 , 20 wafer holding substrate 19A, 19C, 20A, 20C recess 19B, 20B holding lever 19D, 20D projection 21,22 wafer holding part 23A, 23B driving means 24A, 24B … Driving rod 25… Driving means 26… Output shaft 30 … Wafer supply device 31… Semiconductor wafer 32… Wafer storage member 33… Elevator device 34… Belt conveyor 35,37… Post 36, 38… … Shaft 40 … Spin coater 41… Rotating shaft 41A… Support member 41B… Bearing 41C… Gear 41a… Top part 41b… Bottom part 42… Cover member 42A… Support member 42B… Shaft part 42C … Cover 42a… Top edge 42b… Bottom edge 43… Tube 44… Thru-hole 45… Tube 46 …… Drain hole 47… Drip device 48… Post 49… Rotating arm 50 ...... dropping nozzle 60 ...... heat treatment apparatus 61 ...... heating furnace 62 ...... heating space 62A ...... through hole 63 ...... lifting device 63A ...... substrate 63B ...... struts 63C ...... support pins 64 ...... Receiving stand 64A …… Through hole 65 …… Intermittent transfer device 66,67 …… Transfer half 66A, 67A …… Base 66B, 67B …… Coupling 66C, 67C …… Supporting body 66D, 67D …… Supporting claw 68… … Driving means 68A …… Support 68B …… Guide shaft 68C …… Power source 68D …… Coupling 69 …… Cooling stand 69A …… Through hole 70 …… Wafer ejector 71 …… Belt conveyor 72, 74 …… Posts 73, 75 …… Shaft 76 …… Wafer accommodating member 77 …… Elevator device

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Internal reference number FI Technical indication location H01L 21/30 564C (72) Inventor Un Komazawa 1-2-4 Matsushima, Niigata City TCK Corporation (72) Inventor Kouichi Takahashi 1-226-2 Nishishinjuku, Shinjuku-ku, Tokyo Toshiba Toshiba Ceramics Co., Ltd. (72) Inventor Kimitoshi Iwasaki 378 Oguni-machi, Oguni-machi, Nishiokitama-gun, Yamagata 378 Toshiba Ceramics Oguni Manufacturing Co., Ltd. In-house (56) Reference JP-A-62-72137 (JP, A)

Claims (2)

(57) [Claims] 1. A wafer transfer device for transferring a semiconductor wafer transferred from a wafer accommodating member by a belt conveyor so as to be placed on a rotating shaft of a spin coater, comprising: (a) a front peripheral surface of the semiconductor wafer; A wafer holding member including a concave portion to be abutted and a holding lever for pressing and holding the rear peripheral surface of the semiconductor wafer against the concave portion; and (b) holding the wafer by the concave portion and the holding lever. The wafer holding member is moved toward the spin coater and is stopped at a position where the center of the semiconductor wafer held in the recess and the rotation axis of the rotation shaft are aligned with each other. Characteristic wafer transfer device. 2. A wafer transfer device for transferring a semiconductor wafer transferred from a wafer accommodating member by a belt conveyor so as to be mounted on a rotating shaft of a spin coater, comprising: (a) abutting against a peripheral surface of the semiconductor wafer. And a holding lever that presses and holds the semiconductor wafer against the recess, and another recess that receives and holds the semiconductor wafer mounted on the rotating shaft. A member, and (b) the wafer holding member is moved toward the spin coater, and the semiconductor wafer mounted on the rotating shaft is received and held in the other recess, and then the semiconductor held in the recess. A moving means for stopping the wafer at a position where the center of the wafer and the rotation axis of the rotation shaft are aligned with each other. Wafer transfer apparatus according to claim.