JP2556273B2 - Modulation-doped multiple quantum well semiconductor laser device - Google Patents
Modulation-doped multiple quantum well semiconductor laser deviceInfo
- Publication number
- JP2556273B2 JP2556273B2 JP5271724A JP27172493A JP2556273B2 JP 2556273 B2 JP2556273 B2 JP 2556273B2 JP 5271724 A JP5271724 A JP 5271724A JP 27172493 A JP27172493 A JP 27172493A JP 2556273 B2 JP2556273 B2 JP 2556273B2
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- layer
- modulation
- semiconductor laser
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
- H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光通信システムの光源
及び光計測器の光源として用いられる半導体レーザに関
し、特に、ｐ型変調ドープ多重量子井戸型半導体レーザ
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser used as a light source for an optical communication system and a light source for an optical measuring instrument, and more particularly to a p-type modulation-doped multiple quantum well semiconductor laser.
【０００２】[0002]
【従来の技術】図３は、従来のｐ型変調ドープ多重量子
井戸型半導体レーザの構造を示す図であり、（ａ）は活
性層におけるバンド構造を示す図。（ｂ）はその拡大図
である。2. Description of the Related Art FIG. 3 is a diagram showing a structure of a conventional p-type modulation-doped multiple quantum well semiconductor laser, and FIG. 3 (a) is a diagram showing a band structure in an active layer. (B) is the enlarged view.
【０００３】図３（ａ）中、３０１はn-InPからなるバ
ッファ層、３０２は１．１３μｍ組成のInGaAsPからな
る光導波路層、３０３は１．１３μｍ組成のInGaAsPか
らなる障壁層、３０４は１．４μｍ組成のInGaAsPから
なる量子井戸層、３０５はp-InPからなるクラッド層で
ある。また、３１１は電子の第一量子準位、３１２はホ
ールの第一量子準位をそれぞれ示している。In FIG. 3A, 301 is a buffer layer made of n-InP, 302 is an optical waveguide layer made of 1.13 μm composition InGaAsP, 303 is a barrier layer made of 1.13 μm composition InGaAsP, and 304 is 1 A quantum well layer made of InGaAsP having a composition of 4 μm and a cladding layer 305 made of p-InP. Further, 311 indicates the first quantum level of electrons, and 312 indicates the first quantum level of holes.
【０００４】図３（ｂ）中、３１３はイオン化したＺｎ
を示している。障壁層のみに選択的にドープされたＺｎ
は、ホールを吐き出してイオン化する（一部拡散によっ
て量子井戸層に入り込む）。吐き出されたホールはより
エネルギー的に安定な量子井戸層の価電子帯のトップへ
と移行する。その結果、価電子帯のフェルミ準位が量子
井戸の価電子帯内部に位置するようになり、半導体レー
ザにした場合、正味の誘導放射遷移が増大するため、緩
和振動周波数が増大する等の利点がある。In FIG. 3B, 313 is ionized Zn.
Is shown. Zn selectively doped only in the barrier layer
Emits holes to be ionized (partially diffuses into the quantum well layer). The ejected holes move to the top of the valence band of the more energy stable quantum well layer. As a result, the Fermi level of the valence band comes to be located inside the valence band of the quantum well, and in the case of a semiconductor laser, the net stimulated radiative transition increases, so that the relaxation oscillation frequency increases. There is.
【０００５】一般に多重量子井戸構造はＭＢＥ（molecu
lar beam epitaxy）やＭＯＶＰＥ（metal organic vapo
r phase epitaxy）等の気相成長法を用いて形成される
が、変調ドープ多重量子井戸レーザは障壁層を成長して
いるときにのみドーピング原料を供給することで障壁層
に不純物を選択的に導入して作製する。しかしながら、
図３（ｂ）に示されるように障壁層のみに導入されたは
ずの不純物は拡散によって量子井戸層まで入り込む。こ
の傾向は不純物としてＺｎを用いたときに著しい。量子
井戸層へ拡散していく不純物の量を低減するために、障
壁層の中央部分にのみ不純物を導入する方法、障壁層の
中央で一旦成長を停止して不純物を添加する方法等も提
案されている。Generally, a multi-quantum well structure has an MBE (molecu
lar beam epitaxy) and MOVPE (metal organic vapo)
It is formed using a vapor phase epitaxy method such as r phase epitaxy), but the modulation-doped multiple quantum well laser selectively supplies impurities to the barrier layer by supplying the doping material only when the barrier layer is grown. Introduced and produced. However,
As shown in FIG. 3B, the impurities that should have been introduced only into the barrier layer enter the quantum well layer by diffusion. This tendency is remarkable when Zn is used as an impurity. In order to reduce the amount of impurities diffusing into the quantum well layer, a method of introducing impurities only in the central portion of the barrier layer, a method of temporarily stopping the growth in the center of the barrier layer and adding the impurities have been proposed. ing.
【０００６】[0006]
【発明が解決しようとする課題】上述した従来の変調ド
ープ多重量子井戸レーザは、障壁層が単一組成であるた
めに障壁層内部での不純物の拡散を抑えることができ
ず、量子井戸層に不純物が入り込むことを避けることが
出来ない。量子井戸層へと拡散していった不純物は非発
光再結合中心になるため量子井戸層へと注入されたキャ
リアを消費してしまい、レーザの特性を悪化させるとい
う問題点がある。In the conventional modulation-doped multi-quantum well laser described above, since the barrier layer has a single composition, the diffusion of impurities inside the barrier layer cannot be suppressed, and the quantum well layer cannot be suppressed. It is unavoidable that impurities enter. The impurity diffused into the quantum well layer becomes a non-radiative recombination center and consumes the carriers injected into the quantum well layer, which causes a problem that laser characteristics are deteriorated.
【０００７】また、量子井戸層へ拡散していく不純物の
量を低減するために障壁層で導入する不純物の量を減ら
した場合には、変調ドープによって量子井戸内にできる
キャリアの数も減ってしまうため、もともとの変調ドー
プの効果が低減してしまうという問題点がある。When the amount of impurities introduced into the barrier layer is reduced in order to reduce the amount of impurities diffusing into the quantum well layer, the number of carriers that can be formed in the quantum well is reduced by modulation doping. Therefore, there is a problem that the effect of the original modulation doping is reduced.
【０００８】本発明は上述したような従来の技術が有す
る問題点を解決するためになされたもので、価電子帯の
フェルミ準位が量子井戸層の価電子帯の内部に位置する
ほどの不純物を障壁層に添加しながらも、その不純物が
量子井戸層に拡散する事を抑制し、緩和振動周波数等の
特性を向上させることを目的とする。The present invention has been made in order to solve the problems of the above-mentioned conventional techniques, and impurities such that the Fermi level of the valence band is located inside the valence band of the quantum well layer. Is added to the barrier layer, its impurity is suppressed from diffusing into the quantum well layer, and the characteristics such as relaxation oscillation frequency are improved.
【０００９】[0009]
【課題を解決するための手段】本発明の変調ドーブ多重
量子井戸レーザは、InGaAsもしくはInGaAsPからなる量
子井戸層と、該量子井戸層よりも広いバンドギャップを
有するInGaAsPからなり意図的にｐ型のドーパントがド
ーピングされた障壁層とにより活性層が形成される変調
ドープ多重量子井戸型半導体レーザにおいて、前記障壁
層内に設けられ、InGaAsからなり、障壁層との間でつく
られる量子井戸に電子の第一量子準位が存在しない厚さ
のドーパント拡散阻止層を有することを特徴とする。A modulated dove multi-quantum well laser of the present invention comprises a quantum well layer made of InGaAs or InGaAsP and an InGaAsP having a bandgap wider than that of the quantum well layer, and is intentionally p-type. In a modulation-doped multi-quantum well type semiconductor laser in which an active layer is formed by a barrier layer doped with a dopant, electrons are stored in a quantum well formed between the barrier layer and InGaAs, which is formed in the barrier layer. It is characterized by having a dopant diffusion blocking layer having a thickness in which the first quantum level does not exist.
【００１０】[0010]
【作用】一般的にInP系のｐ型のドーパントであるＺｎ
は、拡散する物質のバンドギャップ波長が長い程その物
質中を拡散していく速度が遅く、InPとInGaAsではＺｎ
の拡散速度は３倍程InGaAsのほうが遅い。従ってInGaAs
をＺｎの拡散防止層に適用できるが、InGaAsはこの物質
系で最もバンドギャップが小さいため、InGaAsPやInPと
の組み合わせでは量子井戸層となってしまい注入された
キャリアが消費されてしまう。Function: Zn which is generally an InP-based p-type dopant
The longer the bandgap wavelength of the diffusing substance, the slower the rate of diffusing in that substance.
The diffusion rate of InGaAs is about 3 times slower than that of InGaAs. Therefore InGaAs
Can be applied to the Zn diffusion prevention layer, but InGaAs has the smallest bandgap in this material system, and therefore, in combination with InGaAsP or InP, it becomes a quantum well layer and the injected carriers are consumed.
【００１１】しかしながら、InGaAsの層厚を十分薄くす
れば電子の量子準位は存在することが出来ないので、In
GaAs層でのキャリア再結合を防ぐことができる。However, if the InGaAs layer is made sufficiently thin, the electron quantum level cannot exist.
Carrier recombination in the GaAs layer can be prevented.
【００１２】本発明は以上述べた現象を利用してＺｎの
拡散防止層としてInGaAsを用いながらキャリアの余分な
消費を抑制するものである。The present invention utilizes the above-mentioned phenomenon to suppress excessive carrier consumption while using InGaAs as a Zn diffusion preventing layer.
【００１３】[0013]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【００１４】図１は本発明の一実施例であるｐ型変調ド
ープ多重量子井戸型半導体レーザの要部構造を示す図で
あり、（ａ）は、１．３μｍ帯の活性層におけるバンド
構造を示す図、（ｂ）はその拡大図である。FIG. 1 is a diagram showing a main structure of a p-type modulation-doped multiple quantum well semiconductor laser according to an embodiment of the present invention. FIG. 1 (a) shows a band structure in an active layer of 1.3 μm band. The figure and (b) are the enlarged views.
【００１５】図１（ａ）中、１０１はn-InPからなるバ
ッファ層、１０２は１．１３μｍ組成のInGaAsPからな
る光導波路層、１０３は１．１３μｍ組成InGaAsPから
なる障壁層、１０４は１．４μｍ組成のInGaAsPからな
る量子井戸層、１０５はp-InPからなるクラッド層、１
０６はInGaAsからなる拡散防止層である。In FIG. 1A, 101 is a buffer layer made of n-InP, 102 is an optical waveguide layer made of InGaAsP having a composition of 1.13 μm, 103 is a barrier layer made of InGaAsP having a composition of 1.13 μm, and 104 is 1. Quantum well layer made of InGaAsP having a composition of 4 μm, 105 is a cladding layer made of p-InP, 1
Reference numeral 06 is a diffusion preventing layer made of InGaAs.
【００１６】本実施例の場合はInGaAs拡散防止層１０６
にのみＺｎをドープしている。それぞれの層の厚さはn-
InPバッファ層１０１が０．４μｍ、InGaAsP光導波路層
１０２がｐ側、ｎ側のそれぞれについて６０ｎｍ、InGa
AsP障壁層１０３はInGaAs拡散防止層１０６の両わきで
それぞれ４ｎｍ、量子井戸層１０４が４．３ｎｍ、InGa
As拡散防止層１０６が０．６ｎｍ、p-InPからなるクラ
ッド層１０５が０．７μｍである。また、InGaAs拡散防
止層１０６中のＺｎ濃度はバルク結晶の時３×１０18ｃ
ｍ-3となるようなＺｎ原料比とされており、量子井戸の
数は１０層である。１１１は電子の第一量子準位、１１
２はホールの第一量子準位をそれぞれ示している。In the present embodiment, the InGaAs diffusion prevention layer 106
Only Zn is doped. The thickness of each layer is n-
The InP buffer layer 101 is 0.4 μm, the InGaAsP optical waveguide layer 102 is 60 nm on each of the p-side and the n-side, InGa
The AsP barrier layer 103 is 4 nm on both sides of the InGaAs diffusion prevention layer 106, the quantum well layer 104 is 4.3 nm, and
The As diffusion prevention layer 106 has a thickness of 0.6 nm, and the p-InP clad layer 105 has a thickness of 0.7 μm. The Zn concentration in the InGaAs diffusion prevention layer 106 is 3 × 10 18 c when it is a bulk crystal.
The Zn raw material ratio is set to m −3, and the number of quantum wells is 10. 111 is the first quantum level of the electron, 11
2 indicates the first quantum level of the hole, respectively.
【００１７】ここで、重要なのはInGaAs拡散防止層１０
６を量子井戸と見たときに電子の量子準位が存在してい
ないことである。障壁層１０３に１．１３μｍ組成のIn
GaAsPを用いた場合、InGaAs層の厚さが０．６ｎｍ以下
になると電子の束縛された量子準位は存在しえない。図
１（ｂ）の拡大図中、１１３はイオン化したＺｎを示
し、１１４はInGaAsのホールの第一量子準位を示してい
る。Here, what is important is the InGaAs diffusion prevention layer 10.
When 6 is regarded as a quantum well, there is no electron quantum level. 1.13 μm composition of In on the barrier layer 103
In the case of using GaAsP, if the thickness of the InGaAs layer is 0.6 nm or less, electron-bound quantum levels cannot exist. In the enlarged view of FIG. 1B, 113 indicates ionized Zn, and 114 indicates the first quantum level of InGaAs hole.
【００１８】なお、本実施例においては、上記の様に極
めて薄い半導体層を形成する方法としてＭＯＶＰＥ法を
用いた。この後、例えばＬＰＥ成長法を用いてＤＣ−Ｐ
ＢＨ構造等の埋め込み構造の埋め込み型半導体レーザと
した。In this example, the MOVPE method was used as the method for forming the extremely thin semiconductor layer as described above. After this, DC-P is formed using, for example, the LPE growth method.
A buried semiconductor laser having a buried structure such as a BH structure was used.
【００１９】上記のように構成された第１の実施例の半
導体レーザーでは、共振器長３００μｍで後方端面に７
０％の高反射膜をつけて光出力特性を測定したところ、
閾値の２倍のバイアス電流での緩和振動周波数は１０Ｇ
Ｈｚであった。この値は変調ドープをしない多重量子井
戸レーザにくらべて緩和振動周波数が２ＧＨｚ程大きか
った。In the semiconductor laser of the first embodiment constructed as described above, the resonator length is 300 μm, and 7 is formed on the rear end face.
When the light output characteristics were measured with a 0% high reflection film,
The relaxation oscillation frequency at a bias current twice the threshold is 10G
It was Hz. This value had a relaxation oscillation frequency of about 2 GHz larger than that of the multiple quantum well laser without modulation doping.
【００２０】本実施例は、極めて低い閾値を実現するた
めに量子井戸層数を１０層以上と多く設ける素子等の、
光閉じ込め係数を制御する障壁層の厚さを厚くできない
素子を構成する際に特に有用である。In this embodiment, in order to realize an extremely low threshold value, such as an element provided with a large number of quantum well layers of 10 or more,
It is particularly useful in constructing a device in which the thickness of the barrier layer that controls the light confinement coefficient cannot be increased.
【００２１】次に、本発明の第２の実施例について説明
する。Next, a second embodiment of the present invention will be described.
【００２２】図２は本発明の第２の実施例のｐ型変調ド
ープ多重量子井戸型半導体レーザの要部構造を示す図で
あり、（ａ）は１．５５μｍ帯活性層におけるバンド構
造を示す図、（ｂ）はその拡大図である。FIG. 2 is a diagram showing a main structure of a p-type modulation-doped multiple quantum well type semiconductor laser according to a second embodiment of the present invention. FIG. 2A shows a band structure in a 1.55 μm band active layer. FIG. 1B is an enlarged view of the same.
【００２３】図２（ａ）中、２０１はn-InPからなるバ
ッファ層、２０２は１．２μｍ組成のInGaAsPからなる
光導波路層、２０３は１．２μｍ組成InGaAsPからなる
障壁層、２０４はInGaAsからなる量子井戸層、２０５は
P-InPからなるクラッド層、２０６はInGaAsからなる拡
散防止層である。In FIG. 2A, 201 is a buffer layer made of n-InP, 202 is an optical waveguide layer made of 1.2 μm composition InGaAsP, 203 is a barrier layer made of 1.2 μm composition InGaAsP, and 204 is made of InGaAs. Is a quantum well layer
The cladding layer made of P-InP and 206 are diffusion preventing layers made of InGaAs.
【００２４】本実施例が第１の実施例と異なる点は、障
壁層２０３の中に２つのInGaAs拡散防止層２０６を設
け、ｐ型の不純物であるＺｎをその２つのInGaAs拡散防
止層２０６の間のInGaAsPに導入していることである。The present embodiment is different from the first embodiment in that two InGaAs diffusion preventing layers 206 are provided in the barrier layer 203, and Zn which is a p-type impurity is added to the two InGaAs diffusion preventing layers 206. It is being introduced into InGaAsP between.
【００２５】量子井戸層２０４と拡散防止層２０６との
間にある障壁層２０３の厚さは４ｎｍ、Ｚｎを導入した
障壁層２０３の厚さは２ｎｍ、拡散阻止層２０６の厚さ
は０．７ｎｍで量子井戸層数は４層である。この時のＺ
ｎ濃度は３×１０18ｃｍ-3になるようにＺｎ原料比をと
っている。The barrier layer 203 between the quantum well layer 204 and the diffusion prevention layer 206 has a thickness of 4 nm, the barrier layer 203 having Zn introduced therein has a thickness of 2 nm, and the diffusion blocking layer 206 has a thickness of 0.7 nm. Therefore, the number of quantum well layers is four. Z at this time
The Zn raw material ratio is set so that the n concentration is 3 × 10 18 cm −3 .
【００２６】上記のように構成された第２の実施例の半
導体レーザーでは、共振器長１２００μｍで端面にそれ
ぞれ６％，９０％の低反射膜と高反射膜をつけた場合の
緩和振動周波数は閾値の２倍のバイアス電流のときに４
ＧＨｚで、変調ドープをしない多重量子井戸半導体レー
ザにくらべ、１ＧＨｚ程高かった。In the semiconductor laser of the second embodiment constructed as described above, the relaxation oscillation frequency when the resonator length is 1200 μm and the low reflection film and the high reflection film of 6% and 90% are respectively attached to the end faces is 4 when the bias current is twice the threshold
At GHz, it was about 1 GHz higher than that of the multiple quantum well semiconductor laser without modulation doping.
【００２７】本実施例の場合には、量子井戸層の層数が
５層以下で、かつ、光閉じ込め率を大きくするため障壁
層の厚さを大きくとりたい素子に特に有用である。This embodiment is particularly useful for an element in which the number of quantum well layers is 5 or less and the barrier layer is desired to have a large thickness in order to increase the optical confinement rate.
【００２８】なお、以上説明した各実施例において、半
導体レーザーをInGaAsP系のファブリペロー型レーザの
例をあげたが、本発明の構成は、分布帰還型（ＤＦＢ）
レーザーや分布反射型（ＤＢＲ）レーザ等の単一軸モー
ドレーザにも当然適用することができる。In each of the embodiments described above, the semiconductor laser is an InGaAsP Fabry-Perot type laser, but the structure of the present invention is a distributed feedback type (DFB).
Of course, it can be applied to a single axis mode laser such as a laser or a distributed reflection (DBR) laser.
【００２９】[0029]
【発明の効果】本発明は以上説明したように構成されて
いるので、以下に記載するような効果を奏する。Since the present invention is configured as described above, it has the following effects.
【００３０】本発明による変調ドープ多重量子井戸半導
体レーザでは、価電子帯のフェルミ準位が量子井戸層の
価電子帯内部に位置する程の不純物を障壁層に導入しな
がらも、その不純物が量子井戸層に拡散して非発光中心
になりレーザ特性を悪化させることを防ぐことができる
ため、ｐ型変調ドープの効果を十分に引き出すことがで
き、緩和振動周波数等の特性を向上させることができる
効果がある。In the modulation-doped multi-quantum well semiconductor laser according to the present invention, while introducing an impurity into the barrier layer such that the Fermi level of the valence band is located inside the valence band of the quantum well layer, the impurity is quantized. Since it can be prevented from diffusing into the well layer to become a non-emission center and deteriorating the laser characteristics, the effect of p-type modulation doping can be sufficiently brought out, and characteristics such as relaxation oscillation frequency can be improved. effective.
【図１】本発明の第１の実施例の要部構造を示す図であ
り、（ａ）は、バンド構造を示す図、（ｂ）は（ａ）の
拡大図である。FIG. 1 is a diagram showing a main part structure of a first embodiment of the present invention, (a) is a diagram showing a band structure, and (b) is an enlarged view of (a).
【図２】本発明の第２の実施例の要部構造を示す図であ
り、（ａ）は、バンド構造を示す図、（ｂ）は（ａ）の
拡大図である。2A and 2B are diagrams showing a main part structure of a second embodiment of the present invention, FIG. 2A is a view showing a band structure, and FIG. 2B is an enlarged view of FIG. 2A.
【図３】従来例の要部構造を示す図であり、（ａ）は、
バンド構造を示す図、（ｂ）は（ａ）の拡大図である。FIG. 3 is a diagram showing a main part structure of a conventional example, in which (a) is
The figure which shows a band structure, (b) is an enlarged view of (a).
１０１，２０１ n-InPバッファ層 １０２，２０２ InGaAsP光導波路層 １０３，２０３ InGaAsP障壁層 １０４，２０４ InGaAs(P)量子井戸層 １０５，２０５ p-InPクラッド層 １０６，２０６ InGaAs拡散防止層 １１１，２１１ 電子の第一量子準位 １１２，２１２ ホールの第一量子準位 １１３，２１３ イオン化したＺｎ １ｌ４，２１４ InGaAs拡散防止層のホールの第一量
子準位101, 201 n-InP buffer layer 102, 202 InGaAsP optical waveguide layer 103, 203 InGaAsP barrier layer 104, 204 InGaAs (P) quantum well layer 105, 205 p-InP clad layer 106, 206 InGaAs diffusion prevention layer 111, 211 electrons First quantum level 112,212 first quantum level of hole 113,213 ionized Zn 11 4,214 first quantum level of hole of InGaAs diffusion prevention layer
Claims (4)
戸層と、該量子井戸層よりも広いバンドギャップを有す
るInGaAsPからなり意図的にｐ型のドーパントがドーピ
ングされた障壁層とにより活性層が形成される変調ドー
プ多重量子井戸型半導体レーザにおいて、 前記障壁層内に設けられ、InGaAsからなり、障壁層との
間でつくられる量子井戸に電子の第一量子準位が存在し
ない厚さのドーパント拡散阻止層を有することを特徴と
する変調ドープ多重量子井戸型半導体レーザ。1. An active layer is formed by a quantum well layer made of InGaAs or InGaAsP and a barrier layer made of InGaAsP having a band gap wider than that of the quantum well layer and intentionally doped with a p-type dopant. In a modulation-doped multi-quantum well semiconductor laser, a dopant diffusion blocking layer having a thickness in which the first quantum level of electrons does not exist in the quantum well formed between the barrier layer and the InGaAs, which is formed in the barrier layer. A modulation-doped multi-quantum well semiconductor laser having:
型半導体レーザにおいて、 ファブリペロー型共振構造が形成されていることを特徴
とする変調ドープ多重量子井戸型半導体レーザ。2. A modulation-doped multi-quantum well semiconductor laser according to claim 1, wherein a Fabry-Perot resonance structure is formed.
型半導体レーザにおいて、 分布帰還型の単一モード型レーザに構成されていること
を特徴とする変調ドープ多重量子井戸型半導体レーザ。3. The modulation-doped multiple quantum well semiconductor laser according to claim 1, wherein the modulation-doped multiple quantum well semiconductor laser is configured as a distributed feedback single-mode laser.
型半導体レーザにおいて、 分布反射型の単一モード型レーザに構成されていること
を特徴とする変調ドープ多重量子井戸型半導体レーザ。4. The modulation-doped multi-quantum well semiconductor laser according to claim 1, which is a distributed reflection single-mode laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5271724A JP2556273B2 (en) | 1993-10-29 | 1993-10-29 | Modulation-doped multiple quantum well semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5271724A JP2556273B2 (en) | 1993-10-29 | 1993-10-29 | Modulation-doped multiple quantum well semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07131105A JPH07131105A (en) | 1995-05-19 |
| JP2556273B2 true JP2556273B2 (en) | 1996-11-20 |
Family
ID=17503962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5271724A Expired - Fee Related JP2556273B2 (en) | 1993-10-29 | 1993-10-29 | Modulation-doped multiple quantum well semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2556273B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6437372B1 (en) | 2000-01-07 | 2002-08-20 | Agere Systems Guardian Corp. | Diffusion barrier spikes for III-V structures |
| JP4057802B2 (en) | 2001-09-05 | 2008-03-05 | 株式会社日立製作所 | Semiconductor optical device |
-
1993
- 1993-10-29 JP JP5271724A patent/JP2556273B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07131105A (en) | 1995-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0332453B1 (en) | Distributed feedback semiconductor laser device and current injection method therefor | |
| US4928285A (en) | Impurity-doped semiconductor laser device for single wavelength oscillation | |
| US6989550B2 (en) | Distributed feedback semiconductor laser equipment employing a grating | |
| EP0400559B1 (en) | Semiconductor optical device | |
| JPS6254489A (en) | Semiconductor light emitting element | |
| JPH05102604A (en) | Semiconductor laser device | |
| US5914496A (en) | Radiation emitting semiconductor diode of buried hetero type having confinement region of limited Al content between active layer and at least one inp cladding layer, and method of manufacturing same | |
| US5737353A (en) | Multiquantum-well semiconductor laser | |
| JP4027639B2 (en) | Semiconductor light emitting device | |
| JP2778454B2 (en) | Semiconductor laser | |
| Mamijoh et al. | Improved operation characteristics of long-wavelength lasers using strained MQW active layers | |
| JP2556273B2 (en) | Modulation-doped multiple quantum well semiconductor laser device | |
| JP2522021B2 (en) | Semiconductor laser | |
| JP2882335B2 (en) | Optical semiconductor device and method for manufacturing the same | |
| Cao et al. | GaInAsP/InP single-quantum-well (SQW) laser with wire-like active region towards quantum wire laser | |
| US5351254A (en) | Semiconductor laser | |
| Lu et al. | High-speed performance of partly gain-coupled 1.55-mu m strained-layer multiple-quantum-well DFB lasers | |
| JPH04350988A (en) | Light-emitting element of quantum well structure | |
| US5170404A (en) | Semiconductor laser device suitable for optical communications systems drive | |
| JPH11145549A (en) | Multiple quantum well structure, and optical semiconductor device and light modulator having the same | |
| Nilsson et al. | DFB laser with nonuniform coupling coefficient realized by double-layer buried grating | |
| US6350629B1 (en) | Optical semiconductor device having active layer and carrier recombination layer different from each other | |
| JP2950853B2 (en) | Semiconductor optical device | |
| JP3572157B2 (en) | Semiconductor laser device | |
| JP2839397B2 (en) | Tunable semiconductor laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080905 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080905 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090905 Year of fee payment: 13 |
|
| LAPS | Cancellation because of no payment of annual fees |