JP2556009B2 - Method of controlling resistance value of compound type resistor - Google Patents
Method of controlling resistance value of compound type resistorInfo
- Publication number
- JP2556009B2 JP2556009B2 JP61167128A JP16712886A JP2556009B2 JP 2556009 B2 JP2556009 B2 JP 2556009B2 JP 61167128 A JP61167128 A JP 61167128A JP 16712886 A JP16712886 A JP 16712886A JP 2556009 B2 JP2556009 B2 JP 2556009B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- compound
- resistor material
- resistor
- based resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、化合物系抵抗体材、例えば絶縁基板上に
形成された膜状の金属酸化物系抵抗体などの抵抗値制御
方法に関するものである。TECHNICAL FIELD The present invention relates to a resistance control method for a compound resistor material, for example, a film-like metal oxide resistor formed on an insulating substrate. is there.
第２図は、雑誌「電子技術」1983年第25巻第14号第32
頁〜第33頁に記載された従来の化合物系抵抗体の抵抗値
制御方法を示す構成図である。図において、（１）は抵
抗値を制御される化合物系抵抗体材で、例えば金属酸化
物系抵抗体材（以下、抵抗体材と記す）、（２）はこの
抵抗体材（１）に接続された導体基板、（３）は導体基
板（２）に接触する探針、（４）は抵抗体材（１）の抵
抗値を測定することによつて、レーザ光のON、OFFとレ
ーザ光の走査を制御するコントローラ、（５）は抵抗体
材（１）を切削し、その抵抗体材の抵抗値を増加させる
レーザ光で、例えば連続発振レーザ光、又は短パルス間
隔のパルスレーザ光である。Fig. 2 shows the magazine "Electronics", Vol. 25, No. 14, No. 32, 1983.
FIG. 14 is a configuration diagram showing a conventional method for controlling the resistance value of a compound-based resistor described on pages 33 to 33. In the figure, (1) is a compound resistor material whose resistance value is controlled, for example, a metal oxide resistor material (hereinafter referred to as a resistor material), and (2) is a resistor material (1). Connected conductor board, (3) probe to contact the conductor board (2), (4) by measuring the resistance value of the resistor material (1), laser light ON and OFF and laser A controller for controlling light scanning, (5) is a laser beam that cuts the resistor material (1) and increases the resistance value of the resistor material, for example, continuous wave laser light or pulsed laser light with a short pulse interval. Is.
上記のように構成された装置において、まずレーザ光
（５）を適当な光学系を用いて集光し、抵抗値を制御さ
れるべき抵抗体材（１）に焦点を合わせる。探針（３）
を両端に接続された導体基板（２）に接触させ、抵抗体
材（１）の抵抗値を測定しながらレーザ光（５）を照射
する。この照射により瞬間的に抵抗体材（１）を蒸発さ
せると、抵抗体材（１）は切削されてその抵抗値は高く
なる。、従ってレーザ光（５）の走査によって所望の抵
抗値まで切削すれば、所望の抵抗値を有する抵抗体が得
られる。In the apparatus configured as described above, the laser beam (5) is first focused by using an appropriate optical system, and the resistor material (1) whose resistance value is to be controlled is focused. Probe (3)
Is brought into contact with the conductor substrate (2) connected to both ends, and the laser beam (5) is irradiated while measuring the resistance value of the resistor material (1). When the resistor material (1) is instantaneously evaporated by this irradiation, the resistor material (1) is cut and its resistance value becomes high. Therefore, by cutting to a desired resistance value by scanning with the laser beam (5), a resistor having a desired resistance value can be obtained.
従来の化合物系抵抗体の抵抗値制御方法は以上のよう
に構成されているため、抵抗体材の抵抗値を増加させる
方向にのみ制御可能である。このためレーザ光で抵抗体
材を切削しすぎた場合には、抵抗体材の抵抗値を低下さ
せることができないため修復することが不可能であっ
た。通常基板上に実装される化合物系抵抗体材、例えば
スクリーン印刷によって製造された金属酸化物系厚膜抵
抗体材のレーザ光による切削速度を速くすると、抵抗体
材の抵抗値の測定とレーザ光の走査に時間的誤差が生
じ、抵抗体材を切削しすぎ所望の抵抗値よりも抵抗値が
高くなるため、切削速度を速くすることができないし、
かつ容易に目標の抵抗値が得られないという問題点があ
った。Since the conventional method for controlling the resistance value of the compound-based resistor is configured as described above, it is possible to control only in the direction of increasing the resistance value of the resistor material. For this reason, if the resistor material is cut too much with the laser light, the resistance value of the resistor material cannot be reduced, so that it is impossible to repair the resistor material. When the cutting speed of a compound-based resistor material that is usually mounted on a substrate, for example, a metal oxide-based thick-film resistor material manufactured by screen printing with laser light, is increased, the resistance value of the resistor material is measured and the laser light is used. There is a time error in the scanning of, the resistance material is cut too much, and the resistance value becomes higher than the desired resistance value, so the cutting speed cannot be increased,
Moreover, there is a problem that the target resistance value cannot be easily obtained.
この発明は、かかる問題点を解消するためになされた
もので、容易に目標の抵抗値が得られ、しかも制御後の
抵抗値の信頼性が高く、生産性良く目標の抵抗値が得ら
れる化合物系抵抗体の抵抗値制御方法を提供することを
目的としている。The present invention has been made in order to solve such a problem, and is a compound which can easily obtain a target resistance value, has high reliability of the resistance value after control, and can obtain the target resistance value with good productivity. An object is to provide a method for controlling the resistance value of a system resistor.
この発明に係る化合物系抵抗体の抵抗値制御方法は、
化合物系抵抗体材にレーザ光を照射して抵抗体材を切削
しその抵抗値を増加させる工程、抵抗体材にレーザ光を
照射し、上記抵抗体材を構成する元素を酸化または還元
することにより抵抗体材の化学状態を変化させてその抵
抗体材固有の比抵抗を変化させ、その抵抗値を増減させ
る工程を施して化合物抵抗体材の抵抗値を制御するよう
にしたものである。A method for controlling a resistance value of a compound-based resistor according to the present invention,
A step of irradiating a compound resistor material with laser light to cut the resistor material to increase its resistance value, irradiating the resistor material with laser light to oxidize or reduce the elements constituting the resistor material. The chemical resistance of the resistor material is changed to change the specific resistance of the resistor material, and the resistance value of the compound resistor material is controlled by performing a step of increasing or decreasing the resistance value.
この発明においては、化合物系抵抗体材を切削してそ
の抵抗値を増加させる工程と、化合物系抵抗体材を構成
する元素を酸化または還元することにより、抵抗体材の
化学状態を変化させて抵抗体材固有の比抵抗を変化さ
せ、その抵抗値を増減させる工程とを併用させるため、
二つの工程によって抵抗値を調整することができるの
で、容易に目標の抵抗値に制御され、制御時間も短縮さ
れる。また、化合物系抵抗体の化学状態を変化させる程
度のレーザ光を照射して抵抗値を増減させようとするの
で、化合物系抵抗体の構造変化（形状変化）を伴わず、
それにより抵抗体に生じるクラック等を防止できるの
で、抵抗値調整後の化合物系抵抗体の抵抗値変化が少な
く信頼性が向上する。In this invention, the chemical resistance of the resistor material is changed by cutting the compound resistor material to increase its resistance value and oxidizing or reducing the elements constituting the compound resistor material. To change the specific resistance of the resistor material and increase / decrease its resistance value together,
Since the resistance value can be adjusted by two steps, the target resistance value is easily controlled and the control time is shortened. Further, since the resistance value is increased or decreased by irradiating the laser light to the extent that the chemical state of the compound-based resistor is changed, the structural change (shape change) of the compound-based resistor is not accompanied,
As a result, cracks and the like that occur in the resistor can be prevented, so that the resistance of the compound-based resistor after the adjustment of the resistance is little changed and the reliability is improved.
この発明の一実施例を図について説明する。第１図は
この発明の一実施例による化合物系抵抗体の抵抗値制御
方法を示す構成図である。図において、（１）〜（５）
は従来と同一又は相当部分であり、化合物系抵抗体材
（１）は、例えば酸化ルテニウム（RuO2）系厚膜抵抗体
材などの金属酸化物系厚膜抵抗体材（以下、抵抗体材と
記す）、基板（２）はアルミナセラミツクス基板、レー
ザ光（５）、（６）、（７）は、例えばパルスレーザ光
で、この場合はパルスYAGレーザ光を使用する。An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing a resistance value control method for a compound resistor according to an embodiment of the present invention. In the figure, (1) to (5)
Is the same as or equivalent to a conventional one, and the compound-based resistor material (1) is a metal oxide-based thick-film resistor material such as ruthenium oxide (RuO 2 ) -based thick-film resistor material (hereinafter referred to as resistor material). The substrate (2) is an alumina ceramic substrate, and the laser beams (5), (6), and (7) are, for example, pulsed laser beams, and in this case, pulsed YAG laser beams are used.
まず、抵抗体材（１）にレーザ（５）を照射して切削
し、その抵抗値を増加させる。続いて抵抗体材（１）に
レーザ光（６）を照射して抵抗体材（１）の化学状態を
変化させて抵抗体材（１）固有の比抵抗を変化させ、そ
の抵抗値を、この場合減少させて抵抗値の微調整を行な
った。ここで、抵抗値を減少させるために、例えばパル
スYAGレーザ光（５）をパルス巾10ns、出力30mj/p、ピ
ーク出力2MWで、アルミナセラミツクス基板（２）上に
実装された、初期抵抗291Ωの抵抗体材（１）に１パル
ス照射した結果、抵抗体材（１）の抵抗値は285Ωに低
下した。さらに５パルス照射した結果、抵抗値は255Ω
に低下した。これは、レーザ光（５）照射により抵抗体
材（１）の化学状態が変化するため、抵抗体材（１）固
有の比抵抗が変化することにより抵抗値が減少する。こ
の化学状態の変化とは、部分的に下式に示す還元即ち酸
素欠損がおこつたと思われる。First, the resistor material (1) is irradiated with a laser (5) to be cut, and its resistance value is increased. Subsequently, the resistor material (1) is irradiated with laser light (6) to change the chemical state of the resistor material (1) to change the specific resistance of the resistor material (1), and the resistance value is In this case, the resistance value was decreased to finely adjust the resistance value. Here, in order to reduce the resistance value, for example, a pulsed YAG laser beam (5) with a pulse width of 10 ns, an output of 30 mj / p, and a peak output of 2 MW is mounted on the alumina ceramic substrate (2) and has an initial resistance of 291 Ω. As a result of irradiating the resistor material (1) for one pulse, the resistance value of the resistor material (1) decreased to 285Ω. As a result of irradiating 5 more pulses, the resistance value is 255Ω.
Fell to. This is because the chemical state of the resistor material (1) is changed by the irradiation of the laser beam (5), so that the specific resistance of the resistor material (1) is changed and the resistance value is decreased. This change in the chemical state is considered to be caused partially by the reduction or oxygen deficiency shown in the following formula.
RuO2→Ru＋O2 化合物系抵抗体材のうちたとえば酸化物系抵抗体材は
一般的に酸素欠損量が増加するに従い、比抵抗が減少す
る。このようにして容易に抵抗値を目標の値に設定する
ことができる。Of the RuO 2 → Ru + O 2 compound-based resistor materials, for example, oxide-based resistor materials generally have a specific resistance that decreases as the amount of oxygen vacancies increases. In this way, the resistance value can be easily set to the target value.
ここで、上記一実施例においては、レーザ光（６）を
照射して抵抗体材（１）の化学状態を変化させてその抵
抗値を減少させたが、逆にレーザ光（７）を照射して抵
抗体材（１）の化学状態を変化させてその抵抗値を増加
させる場合もある。この場合レーザ光（７）によって
は、次式の反応が進行するものと考えられる。Here, in the above-mentioned one embodiment, the chemical state of the resistor material (1) was changed by irradiating the laser beam (6) to reduce the resistance value thereof, but conversely, the laser beam (7) was irradiated. Then, the chemical state of the resistor material (1) may be changed to increase its resistance value. In this case, it is considered that the reaction of the following equation proceeds depending on the laser light (7).
Ru＋O2→RuO2 ここで、上記レーザ光（６）、（７）による反応は、
それぞれレーザ光の波長、平均出力、ピーク出力、パル
ス巾及び焦点はずし距離等に依存する他、雰囲気と温度
にも依存する。このため抵抗体材をレーザ光を透過する
窓を有し、雰囲気と温度を変化させる機能を有する密閉
容器内に設置するか、化合物抵抗体材表面に中性気体、
還元性気体、酸化性気体などの吹き付け気体を用いるこ
とにより、上記反応を制御することが可能となる。Ru + O 2 → RuO 2 Here, the reaction by the laser beams (6) and (7) is
It depends on the wavelength of the laser light, the average output, the peak output, the pulse width, the defocusing distance, etc., as well as the atmosphere and temperature. Therefore, the resistor material has a window that transmits laser light, and is installed in a closed container having a function of changing the atmosphere and temperature, or a neutral gas on the compound resistor material surface,
The above reaction can be controlled by using a blowing gas such as a reducing gas or an oxidizing gas.
以上のように切削して抵抗値を増加させた後、レーザ
光（６）、（７）によって抵抗値の微調整を行なった場
合、容易に目標の抵抗値に設定できると共にレーザ光
（５）による切削速度を速くでき、そのため制御に要す
る時間も短縮できるという利点がある。When the resistance value is finely adjusted by the laser beams (6) and (7) after cutting and increasing the resistance value as described above, the target resistance value can be easily set and the laser beam (5) can be easily set. There is an advantage in that the cutting speed can be increased and the time required for control can be shortened.
なお、上記実施例においては、レーザ光（５）により
切削して抵抗値を増加させる工程を施した後、レーザ光
（６）またはレーザ光（７）で抵抗体材の化学状態を変
化させてその抵抗体材固有の比抵抗を変化させその抵抗
値を増減させて抵抗値の調整を行なったが、工程を逆に
してレーザ光（６）、（７）で抵抗体材の化学状態を変
化させて、抵抗体材固有の比抵抗を変化させてその抵抗
値を増減させる工程を施した後、レーザ光（５）により
切削を行なって抵抗値を増加させるようにしてもよい。
この場合においても、抵抗値の制御を２工程で行なって
いるため、制御が容易である。In the above example, after the step of cutting with the laser beam (5) to increase the resistance value is performed, the chemical state of the resistor material is changed with the laser beam (6) or the laser beam (7). The specific resistance of the resistor material was changed and the resistance value was increased or decreased to adjust the resistance value, but the chemical state of the resistor material was changed by reversing the process with laser beams (6) and (7). Then, after performing the step of changing the specific resistance peculiar to the resistor material to increase or decrease the resistance value, cutting may be performed by the laser beam (5) to increase the resistance value.
Even in this case, the resistance value is controlled in two steps, so that the control is easy.
また、上記実施例では抵抗体材（１）がRuO2系厚膜抵
抗体材である場合についてのみ述べているが、Cr2O3、T
iO2などの金属酸化物系抵抗体材、AlN、Si3N4などの金
属チツ化物系抵抗体材、SiC、WCなどの金属炭化物抵抗
体材においても、レーザ光による比抵抗（Ω・ｍ）の減
少がおこるため、応用可能である。Further, in the above-mentioned examples, only the case where the resistor material (1) is a RuO 2 type thick film resistor material is described, but Cr 2 O 3 , T
The specific resistance (Ω ・ m) of laser light can be applied to metal oxide-based resistor materials such as iO 2 , metal nitride-based resistor materials such as AlN and Si 3 N 4, and metal carbide resistor materials such as SiC and WC. ) Is reduced, it is applicable.
さらに、レーザ光は赤外光域のパルスYAGレーザ光を
用いているが、これに限らず、抵抗体材（１）の材質に
よつては紫外光域、可視光域のレーザ光でも、用いる抵
抗体材に適した照射条件を設定すれば、抵抗体材（１）
の化学状態を変化させて比抵抗を変化させ、その結果抵
抗値を増減させて制御することが可能である。Further, although the pulsed YAG laser light in the infrared light region is used as the laser light, the laser light is not limited to this, and depending on the material of the resistor material (1), laser light in the ultraviolet light region or the visible light region is also used. If the irradiation conditions suitable for the resistor material are set, the resistor material (1)
The specific resistance can be changed by changing the chemical state of, and as a result, the resistance value can be increased or decreased to be controlled.
なお、参考としてレーザ光（６）のみで制御を行なっ
てもよいし、レーザ光（７）のみで制御を行なってもよ
い。またレーザ光（６）とレーザ光（７）で抵抗値を制
御してもよい。これらの場合抵抗体材に切削溝は形成さ
れず、そのため切削溝端部にしばしば発生するマイクロ
クラックの発生も無く、さらに化合物抵抗体材の面積を
小さくできるなどの利点がある。As a reference, the control may be performed only by the laser light (6) or may be performed only by the laser light (7). Further, the resistance value may be controlled by the laser light (6) and the laser light (7). In these cases, no cutting groove is formed in the resistor material, and therefore, microcracks that often occur at the ends of the cutting groove are not generated, and there is an advantage that the area of the compound resistor material can be reduced.
以上説明したとおり、この発明によれば、化合物系抵
抗体材にレーザ光を照射して抵抗体材を切削しその抵抗
値を増加させる工程、及び抵抗体材にレーザを照射し、
上記抵抗体材を構成する元素を酸化または還元すること
により抵抗体材の化学状態を変化させてその抵抗体材固
有の比抵抗を変化させ、その抵抗値を増減させる工程を
施して化合物系抵抗体材の抵抗値を制御するようにした
ので、容易に目標の抵抗値に、しかも制御後の抵抗値の
信頼性が高い化合物系抵抗体の抵抗値制御方法が得られ
るという効果がある。As described above, according to the present invention, a step of irradiating a compound-based resistor material with laser light to cut the resistor material to increase its resistance value, and irradiating the resistor material with laser,
The chemical resistance of the resistor material is changed by oxidizing or reducing the elements constituting the resistor material, the specific resistance of the resistor material is changed, and the resistance value is increased or decreased. Since the resistance value of the body material is controlled, there is an effect that it is possible to easily obtain the resistance value control method of the compound-based resistor having the target resistance value and the reliability of the resistance value after control is high.
なお、化合物系抵抗体材を切削してその抵抗値を増加
させる工程を施した後、化合物系抵抗体材を構成する元
素を酸化または還元することにより抵抗体材の化学状態
を変化させてその化合物系抵抗体材固有の比抵抗を変化
させ、その抵抗値を増減させて抵抗値の調整を行なう場
合には、上記効果に加えて制御に要する時間が短く、生
産性の向上した抵抗値制御方法が得られるという効果が
ある。In addition, after performing the step of cutting the compound-based resistor material to increase its resistance value, the chemical state of the resistor-based material is changed by oxidizing or reducing the elements constituting the compound-based resistor material. In the case of adjusting the resistance value by changing the specific resistance specific to the compound resistor material and increasing or decreasing the resistance value, in addition to the above effects, the time required for control is short and the resistance value control with improved productivity There is an effect that a method can be obtained.
第１図はこの発明の一実施例の化合物系抵抗体の抵抗値
制御方法で用いられる装置の構成図、第２図は従来の抵
抗値制御方法を説明する装置の構成図である。 （１）……化合物系抵抗体材、（５）、（６）、（７）
……レーザ光 なお、図中同一符号は同一又は相当部分を示す。FIG. 1 is a block diagram of an apparatus used in a resistance value control method for a compound resistor according to an embodiment of the present invention, and FIG. 2 is a block diagram of an apparatus for explaining a conventional resistance value control method. (1) ... Compound resistor material, (5), (6), (7)
...... Laser light In the figures, the same reference numerals indicate the same or corresponding parts.
Claims (5)
記化合物系抵抗体材を切削しその抵抗値を増加させる工
程及び上記化合物系抵抗体材にレーザ光を照射して上記
化合物系抵抗体を構成する元素を酸化または還元するこ
とにより上記化合物系抵抗体材の化学状態を変化させて
上記化合物系抵抗体材固有の比抵抗を変化させ、その抵
抗値を増減させる工程を施して化合物系抵抗体材の抵抗
値を制御するようにした化合物系抵抗体の抵抗値制御方
法。1. A step of irradiating a compound-based resistor material with a laser beam to cut the compound-based resistor material to increase its resistance value, and a step of irradiating the compound-based resistor material with a laser beam to obtain the compound-based material. By changing the chemical state of the compound-based resistor material by oxidizing or reducing the elements constituting the resistor to change the specific resistance specific to the compound-based resistor material, and performing a step of increasing or decreasing the resistance value. A method for controlling a resistance value of a compound-based resistor, wherein the resistance value of a compound-based resistor material is controlled.
増加させる工程を施した後、化合物系抵抗体材を構成す
る元素を酸化または還元して上記化合物系抵抗体材の化
学状態を変化させてその化合物系抵抗体材固有の比抵抗
を変化させその抵抗値を増減させて、抵抗値の調整を行
なうようにした特許請求の範囲第１項記載の化合物系抵
抗体の抵抗値制御方法。2. A chemical state of the compound-based resistor material is obtained by performing a step of cutting the compound-based resistor material to increase its resistance value, and then oxidizing or reducing elements constituting the compound-based resistor material. The resistance value of the compound-based resistor according to claim 1, wherein the specific resistance of the compound-based resistor material is changed to increase or decrease the resistance value to adjust the resistance value. Control method.
材、金属チッ化物系抵抗体材、及び金属炭化物系抵抗体
材のうちのいずれかである特許請求の範囲第１項または
第２項記載の化合物系抵抗体の抵抗値制御方法。3. The compound resistor material is any one of a metal oxide resistor material, a metal nitride resistor material, and a metal carbide resistor material. A method for controlling a resistance value of a compound-based resistor according to item 2.
及び紫外光域のうちのいずれかである特許請求の範囲第
１項または第２項記載の化合物系抵抗体の抵抗値制御方
法。4. The wavelength of the laser light is an infrared light region, a visible light region,
And a resistance value control method for a compound-based resistor according to claim 1 or 2, which is in any one of an ultraviolet range and an ultraviolet range.
系厚膜抵抗体材である特許請求の範囲第３項記載の化合
物系抵抗体の抵抗値制御方法。5. The method for controlling the resistance value of a compound-based resistor according to claim 3, wherein the metal oxide resistor material is a ruthenium oxide-based thick film resistor material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61167128A JP2556009B2 (en) | 1986-07-15 | 1986-07-15 | Method of controlling resistance value of compound type resistor |
| US07/000,992 US4785157A (en) | 1986-01-09 | 1987-01-07 | Method for controlling electric resistance of a compound-type resistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61167128A JP2556009B2 (en) | 1986-07-15 | 1986-07-15 | Method of controlling resistance value of compound type resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6321801A JPS6321801A (en) | 1988-01-29 |
| JP2556009B2 true JP2556009B2 (en) | 1996-11-20 |
Family
ID=15843953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61167128A Expired - Lifetime JP2556009B2 (en) | 1986-01-09 | 1986-07-15 | Method of controlling resistance value of compound type resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2556009B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03102803A (en) * | 1989-09-18 | 1991-04-30 | Hitachi Ltd | Trimming for thin-film resistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219758A (en) * | 1984-04-16 | 1985-11-02 | Toshiba Corp | Manufacture of multilayer thick film substrate |
| JPS60219709A (en) * | 1984-04-16 | 1985-11-02 | 株式会社東芝 | Laser trimming device |
-
1986
- 1986-07-15 JP JP61167128A patent/JP2556009B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6321801A (en) | 1988-01-29 |
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