JP2551350B2 - Magnetoresistive thin film and method of manufacturing the same - Google Patents
Magnetoresistive thin film and method of manufacturing the sameInfo
- Publication number
- JP2551350B2 JP2551350B2 JP5240978A JP24097893A JP2551350B2 JP 2551350 B2 JP2551350 B2 JP 2551350B2 JP 5240978 A JP5240978 A JP 5240978A JP 24097893 A JP24097893 A JP 24097893A JP 2551350 B2 JP2551350 B2 JP 2551350B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- specific resistance
- magnetoresistive
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010408 film Substances 0.000 claims description 104
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910017112 Fe—C Inorganic materials 0.000 claims description 3
- 230000003116 impacting effect Effects 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 229910017061 Fe Co Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000005291 magnetic effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- BVGSSXDMHDNNIF-UHFFFAOYSA-N (4-oxo-2,3-dihydro-1h-cyclopenta[c]chromen-7-yl) 3-chloro-4-[2-[(2-methylpropan-2-yl)oxycarbonylamino]acetyl]oxybenzoate Chemical compound C1=C(Cl)C(OC(=O)CNC(=O)OC(C)(C)C)=CC=C1C(=O)OC1=CC=C(C2=C(CCC2)C(=O)O2)C2=C1 BVGSSXDMHDNNIF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910018499 Ni—F Inorganic materials 0.000 description 2
- 241000047703 Nonion Species 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗効果薄膜、およ
び、その製造方法に関する。さらに詳しくは、比抵抗の
小さい磁気抵抗効果薄膜、および、その製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive thin film and a method for manufacturing the same. More specifically, the present invention relates to a magnetoresistive thin film having a small specific resistance and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】磁気記録機器の小型大容量化に伴って、
磁気記録技術の高密度化が急速に進展している。その中
にあって磁気抵抗（以下ＭＲと略す）効果を利用した再
生ヘッド（ＭＲヘッド）は、大きい再生出力が得られる
ことから、磁気記録の密度化を推進する主要な技術の一
つである。このＭＲヘッドについては、アイイーイーイ
ー トランザクションズ オン マグネティクス（ＩＥ
ＥＥ Ｔｒａｎｓ．Ｍａｇｎ．），ＭＡＧ−７（１９７
１）１５０において、アール ピー ハント（Ｒ．Ｐ．
Ｈｕｎｔ）により「ア マグネトレジスティブ リード
アウト トランスデューサー」（”Ａ Ｍａｇｎｅｔｏ
ｒｅｓｉｓｔｉｖｅ Ｒｅａｄｏｕｔ Ｔｒａｎｓｄｕ
ｃｅｒ”）と題して論じられている。2. Description of the Related Art With the increase in size and capacity of magnetic recording equipment,
The magnetic recording technology is rapidly becoming higher in density. Among them, a reproducing head (MR head) utilizing a magnetoresistive (hereinafter abbreviated as MR) effect is one of the main techniques for promoting the density of magnetic recording because a large reproducing output can be obtained. . Regarding this MR head, IEE Transactions on Magnetics (IE
EE Trans. Magn. ), MAG-7 (197)
1) At 150, the Earl Hunt (RP.
Hunt) "A Magneto Resistive Readout Transducer"("AMagneto")
resistive Readout Transdu
cer ").
【０００３】ところで、ＭＲヘッドを構成するＭＲ素子
は、磁気抵抗効果の大きなＮｉ−Ｆｅ合金薄膜などのＭ
Ｒ薄膜からなり、このＭＲヘッドの特性はＭＲ薄膜の特
性に強く依存している。特に、ＭＲ素子の通電寿命はＭ
Ｒ薄膜の比抵抗の大きさに関係する。すなわち、比抵抗
が大きいとＭＲ素子のジュール熱による発熱量が増大
し、素子のエレクトロマイグレーションが起きやすくな
り、通電寿命が短くなる。また、発熱量の増大は素子の
熱雑音を増大させる。よって、ＭＲ薄膜の比抵抗は小さ
いほどよい。By the way, the MR element constituting the MR head is an M-element such as a Ni--Fe alloy thin film having a large magnetoresistive effect.
It consists of an R thin film, and the characteristics of this MR head strongly depend on the characteristics of the MR thin film. In particular, the energization life of the MR element is M
It is related to the magnitude of the specific resistance of the R thin film. That is, if the specific resistance is high, the amount of heat generated by the Joule heat of the MR element increases, electromigration of the element easily occurs, and the energization life is shortened. Further, the increase in the amount of heat generated increases the thermal noise of the device. Therefore, the smaller the specific resistance of the MR thin film, the better.
【０００４】そこで、この比抵抗を小さくするために、
例えば、特開昭６１−１５１８２２号公報の発明がなさ
れた。これは、１０- 7 Ｔｏｒｒ以下の高真空中で蒸着
法によりＮｉ−Ｆｅ薄膜を形成することにより、膜中の
残留不純物ガス量を低減させ、比抵抗を小さくするもの
である。また、通常の真空度（２×１０- 6 Ｔｏｒｒ程
度）での形成であっても、膜形成後に熱処理を施すこと
によって、膜中の残留ガス量を低減させることによって
も、比抵抗を小さくすることができるとしている。ま
た、特開昭６０−９１８３号公報の発明では、スパッタ
法によりＮｉ−Ｆｅ薄膜を形成する場合について、母材
であるＮｉ−Ｆｅターゲットの溶融時の真空度を１０
- 5 Ｔｏｒｒ以下とすることによって、比抵抗の小さい
薄膜を得ている。これは、ターゲット中に含まれるガス
成分が低減したことによって、膜中の不純物濃度が低下
したことによる。Therefore, in order to reduce this specific resistance,
For example, the invention of JP-A-61-151822 was made. This is 10 - by forming a Ni-Fe thin film by vapor deposition at 7 Torr in high vacuum below, to reduce the residual impurity gas content in the film, it is to reduce the specific resistance. Further, conventional vacuum - it is formed in the (2 × 10 about 6 Torr), by performing heat treatment after film formation, by reducing the amount of residual gas in the film, to reduce the specific resistance I'm trying to do it. Further, in the invention of Japanese Patent Laid-Open No. 60-9183, when the Ni—Fe thin film is formed by the sputtering method, the vacuum degree at the time of melting the Ni—Fe target as the base material is 10
-By setting the pressure to 5 Torr or less, a thin film having a small specific resistance is obtained. This is because the concentration of impurities in the film was lowered due to the reduction of the gas component contained in the target.
【０００５】[0005]
【発明が解決しようとする課題】従来、ＭＲ薄膜の比抵
抗を小さくするためには前述したように、蒸着法であっ
ても、スパッタ法であっても、膜中の不純物濃度を低下
させる方法が一般的であった。しかしながら、前述の発
明を実施しても、実際に形成されるＭＲ薄膜の比抵抗は
大幅にばらつき、ＭＲヘッドの特性をばらつかせる原因
となっている。Conventionally, in order to reduce the specific resistance of the MR thin film, as described above, the method of reducing the impurity concentration in the film by either the vapor deposition method or the sputtering method is used. Was common. However, even if the above-mentioned invention is carried out, the specific resistance of the actually formed MR thin film greatly varies, which causes the characteristics of the MR head to vary.
【０００６】本発明はこの大幅にばらつくＭＲ薄膜の比
抵抗を小さい値に安定化させることを目的としている。An object of the present invention is to stabilize the specific resistance of the MR thin film, which varies greatly, to a small value.
【０００７】[0007]
【課題を解決するための手段】Ｎｉ−Ｆｅ、あるいは、
Ｎｉ−Ｆｅ−Ｃｏの合金の多結晶集合体よりなる磁気抵
抗効果薄膜において、結晶粒径Ｄと膜厚δとの関係が、
０．５８δ≦Ｄ≦δであることを特徴とした磁気抵抗効
果薄膜とする。このとき１５ｎｍ＜δ＜４０ｎｍとす
る。そして、この条件を満足する磁気抵抗効果型薄膜を
形成する製造方法として、膜堆積中に不活性ガスを加速
し堆積中の膜表面に衝撃を与えながら膜堆積を行う、磁
気抵抗効果薄膜の製造方法とする。Means for Solving the Problems Ni--Fe, or
In a magnetoresistive effect thin film made of a polycrystalline aggregate of Ni—Fe—Co alloy, the relationship between the crystal grain size D and the film thickness δ is
The magnetoresistive effect thin film is characterized in that 0.58δ ≦ D ≦ δ. At this time, 15 nm <δ <40 nm. Then, as a manufacturing method for forming a magnetoresistive effect thin film satisfying these conditions, the film is deposited while accelerating an inert gas during the film deposition and impacting the film surface during the deposition. Let's do it.
【０００８】[0008]
【作用】Ｎｉ−Ｆｅ薄膜の比抵抗は、たとえ膜中の不純
物が十分に低くても、形成される膜の結晶性に依存して
大きく変化する。図１および図２に、それぞれ、結晶性
の良好なＮｉ−Ｆｅ薄膜と結晶性の良好でないＮｉ−Ｆ
ｅ薄膜のＸ線回折パタンを示す。膜厚は図１と図２とも
に、１０、１５、２０、３０ｎｍである。図１および図
２の膜を結晶粒の大きさについて比較した場合、結晶粒
の小さい図２の膜の比抵抗は、結晶粒の大きい図１の膜
の比抵抗に比べて大きい。これは、結晶粒が小さいこと
によって、結晶粒界が多く存在し、電子が結晶粒界で頻
繁に散乱されるためである。よって、結晶粒径の小さい
図２のＮｉ−Ｆｅ薄膜を用いたＭＲヘッドはエレクトロ
マイグレーションを起こしやすく、通電寿命が短い。そ
れに対して、結晶粒径の大きい図１のＮｉ−Ｆｅ薄膜を
用いたＭＲヘッドはエレクトロマイグレーションを起こ
しにくく、通電寿命が長い。The specific resistance of the Ni-Fe thin film changes greatly depending on the crystallinity of the formed film even if the impurities in the film are sufficiently low. 1 and 2 show a Ni—Fe thin film having good crystallinity and a Ni—F film having poor crystallinity, respectively.
3 shows an X-ray diffraction pattern of a thin film. The film thicknesses in both FIGS. 1 and 2 are 10, 15, 20, and 30 nm. When the films of FIGS. 1 and 2 are compared with respect to the size of crystal grains, the resistivity of the film of FIG. 2 having a small crystal grain is larger than the resistivity of the film of FIG. 1 having a large crystal grain. This is because there are many crystal grain boundaries due to the small crystal grains, and electrons are frequently scattered at the crystal grain boundaries. Therefore, the MR head using the Ni—Fe thin film of FIG. 2 having a small crystal grain size easily causes electromigration and has a short energization life. On the other hand, the MR head using the Ni—Fe thin film of FIG. 1 having a large crystal grain size is unlikely to cause electromigration and has a long energization life.
【０００９】図３は、Ｎｉ−Ｆｅ薄膜を１０μｍの幅に
パタン化し、２５０℃の加速環境中で０．５×１０7 Ａ
／ｃｍ2 の電流を流したときの、通電寿命とＮｉ−Ｆｅ
膜の比抵抗の関係を示す。膜の比抵抗の増大とともに通
電寿命は短くなる。比抵抗が２０μΩｃｍ以下のとき
に、１０００時間を越える実用的な寿命が得られる。よ
って、Ｎｉ−Ｆｅ膜の比抵抗としては２０μΩｃｍであ
ることが望ましい。In FIG. 3, a Ni-Fe thin film is patterned into a width of 10 μm and 0.5 × 10 7 A in an accelerated environment of 250 ° C.
Life and Ni-Fe when a current of 1 / cm 2 is applied
The relationship of the specific resistance of a film is shown. The energization life becomes shorter as the specific resistance of the film increases. When the specific resistance is 20 μΩcm or less, a practical life exceeding 1000 hours can be obtained. Therefore, it is desirable that the specific resistance of the Ni—Fe film is 20 μΩcm.
【００１０】この比抵抗を得るためには、膜厚と結晶粒
径とからの規定が必要である。すなわち、膜厚が１５ｎ
ｍ以下となると、膜表面での電子散乱の影響が顕著とな
り比抵抗が増大する。一方、膜厚が４０ｎｍ以上となる
と、比抵抗は低下するが、この膜厚のＮｉ−Ｆｅ膜を用
いたＭＲヘッドは分解能が低下し不都合となる。よっ
て、膜厚δは１５ｎｍ＜δ＜４０ｎｍとなる。In order to obtain this specific resistance, it is necessary to specify the film thickness and the crystal grain size. That is, the film thickness is 15n
When it is less than m, the effect of electron scattering on the film surface becomes remarkable and the specific resistance increases. On the other hand, when the film thickness is 40 nm or more, the specific resistance decreases, but the MR head using the Ni—Fe film having this film thickness has a disadvantage that the resolution is decreased. Therefore, the film thickness δ is 15 nm <δ <40 nm.
【００１１】結晶粒径Ｄと膜厚とは相関があり、図４に
示すように、基本的には膜厚の増大とともにＤは増大す
る。また、膜厚以上にＤを大きくすることは実際上困難
である。図４から、２０μΩｃｍ以下の比抵抗を得るた
めには、１５ｎｍ＜δ＜４０ｎｍにおて、０．５８δ≦
Ｄ≦δとする。この条件を満たすときに、比抵抗は２０
μΩｃｍ以下となり、通電寿命は長くなり実用的なＭＲ
薄膜が得られる。There is a correlation between the crystal grain size D and the film thickness, and as shown in FIG. 4, basically D increases as the film thickness increases. Further, it is practically difficult to make D larger than the film thickness. From FIG. 4, in order to obtain a specific resistance of 20 μΩcm or less, 0.58δ ≦ 15 nm <δ <40 nm
Let D ≦ δ. When this condition is satisfied, the specific resistance is 20
It becomes less than μΩcm, the energization life is long and practical MR
A thin film is obtained.
【００１２】これはＮＩ−Ｆｅ薄膜に限らず、Ｎｉ−Ｆ
ｅ−Ｃｏ薄膜においても同様である。This is not limited to the NI-Fe thin film, but Ni-F
The same applies to the e-Co thin film.
【００１３】[0013]
【実施例】次に本発明の実施例について説明する。 （実施例１）ガラス基板上に下地膜として、膜厚２０ｎ
ｍのＴａ薄膜を形成し、真空を破らずにＮｉ−Ｆｅ膜を
形成した。膜形成にはマグネトロンスパッタ法を用い
て、圧力３ｍＴｏｒｒのアルゴンプラズマによりターゲ
ットをスパッタした。Ｎｉ−Ｆｅ膜はＮｉ1 8 Ｆｅ1 9
合金ターゲットを用い、膜厚１０、１５、２０、および
３０ｎｍの４種類作成した。EXAMPLES Next, examples of the present invention will be described. (Example 1) As a base film on a glass substrate, a film thickness of 20 n
A Ta thin film of m was formed, and a Ni—Fe film was formed without breaking the vacuum. A magnetron sputtering method was used for film formation, and a target was sputtered by argon plasma with a pressure of 3 mTorr. Ni-Fe film is Ni 1 8 Fe 1 9
Four kinds of film thicknesses of 10, 15, 20, and 30 nm were created using an alloy target.
【００１４】図１にこのときのＸ線回折パタンを示す。FIG. 1 shows the X-ray diffraction pattern at this time.
【００１５】膜厚が１０ｎｍと薄くても、面心立方格子
の（１１１）面からの回折が顕著に現れ、結晶性が良好
なことが伺える。これはＮｉ−Ｆｅ膜がＴａ膜上にエピ
タキシャル的に成長したことによると考えられる。 （比較例１）実施例１と同様に、ただし、Ｔａ薄膜を設
けず、ガラス基板上に直接Ｎｉ−Ｆｅ膜を形成した。ガ
ラス基板表面はアモルファス構造である。この時のＮｉ
−Ｆｅ膜のＸ線回折パタンを図２に示す。図１に対し
て、ノイズ成分の大きい回折パタンとなっており、面心
立方格子の（１１１）面からの回折強度も小さい。Ｎｉ
−Ｆｅ膜の結晶性があまり良くないことが伺える。Even if the film thickness is as thin as 10 nm, diffraction from the (111) plane of the face-centered cubic lattice appears remarkably, and it can be seen that the crystallinity is good. It is considered that this is because the Ni—Fe film was epitaxially grown on the Ta film. (Comparative Example 1) As in Example 1, except that the Ta thin film was not provided, the Ni-Fe film was formed directly on the glass substrate. The glass substrate surface has an amorphous structure. Ni at this time
The X-ray diffraction pattern of the —Fe film is shown in FIG. Compared with FIG. 1, the diffraction pattern has a large noise component, and the diffraction intensity from the (111) plane of the face-centered cubic lattice is also small. Ni
It can be seen that the crystallinity of the —Fe film is not so good.
【００１６】図５に図１および図２から求められる結晶
粒径（Ｄ）と膜厚（δ）との関係を示す。Ｄはδと正の
相関にある。表面がアモルファス構造のガラス基板上に
直接形成されたＮｉ−Ｆｅ膜のＤはδに対して、Ｄ＜
０．５８δである。それに対して、Ｔａ膜上に形成され
たＮｉ−Ｆｅ膜のＤはδに対して、Ｄ≧０．５８δと大
きい。図６にＴａ膜上に形成されたＮｉ−Ｆｅ膜の比抵
抗（ρ）と、ガラス基板上に形成されたＮｉ−Ｆｅ膜の
ρの膜厚依存性を示す。Ｔａ膜上に形成された膜の比抵
抗は、ガラス基板上に形成された膜のそれに比べて小さ
い。これは、図５に示したように、Ｔａ膜上に形成され
たＮｉ−Ｆｅ膜の結晶粒径が、ガラス基板上に形成され
た膜のそれよりも大きいことによると考えられる。FIG. 5 shows the relationship between the crystal grain size (D) and the film thickness (δ) obtained from FIGS. 1 and 2. D has a positive correlation with δ. The D of the Ni-Fe film directly formed on the glass substrate having the amorphous structure is D <
It is 0.58δ. On the other hand, D of the Ni-Fe film formed on the Ta film is as large as D ≧ 0.58δ with respect to δ. FIG. 6 shows the film thickness dependence of the specific resistance (ρ) of the Ni—Fe film formed on the Ta film and the ρ of the Ni—Fe film formed on the glass substrate. The specific resistance of the film formed on the Ta film is smaller than that of the film formed on the glass substrate. It is considered that this is because, as shown in FIG. 5, the crystal grain size of the Ni—Fe film formed on the Ta film is larger than that of the film formed on the glass substrate.
【００１７】図７に抵抗変化率（Δρ／ρ）の膜厚依存
性を示す。Ｔａ膜上に形成されたＮｉ−Ｆｅ膜のΔρ／
ρは、ガラス基板上の膜のそれよりも大きい。これは、
Ｔａ膜上に形成されたＮｉ−Ｆｅ膜の比抵抗が、ガラス
基板上に形成された膜のそれよりも小さいためである。 （実施例２）イオンビームスパッタ装置を用いて、ＮＩ
8 1 Ｆｅ1 9 合金ターゲットをＡｒイオンビームスパッ
タし、ガラス基板上にＮｉ−Ｆｅ膜を形成した。このと
き、膜堆積中の基板表面を加速電圧２００Ｖ、電流密度
０．０１ｍＡ／ｃｍ2 のＡｒイオンビームでアシストし
た。Ａｒ圧力は０．３Ｔｏｒｒ、Ｎｉ−Ｆｅ膜厚は１
０、１５、２０、および３０ｎｍとした。 （比較例２）実施例２と同様に、ただし、膜堆積中のＡ
ｒイオンビームでのアシストは行わずにＮｉ−Ｆｅ膜を
形成した。FIG. 7 shows the film thickness dependence of the resistance change rate (Δρ / ρ). Δρ / of Ni-Fe film formed on Ta film
ρ is larger than that of the film on the glass substrate. this is,
This is because the specific resistance of the Ni-Fe film formed on the Ta film is smaller than that of the film formed on the glass substrate. (Example 2) Using an ion beam sputtering apparatus, NI
An 8 1 Fe 19 alloy target was subjected to Ar ion beam sputtering to form a Ni—Fe film on a glass substrate. At this time, the substrate surface during film deposition was assisted with an Ar ion beam having an acceleration voltage of 200 V and a current density of 0.01 mA / cm 2 . Ar pressure is 0.3 Torr, Ni-Fe film thickness is 1
0, 15, 20, and 30 nm. (Comparative Example 2) Similar to Example 2, except that A during film deposition
The Ni—Fe film was formed without assisting with the r ion beam.
【００１８】図９にＮｉ−Ｆｅ膜の膜厚δに対する結晶
粒径Ｄを示す。Ｄはδと正の相関にある。イオンアシス
トをせずに堆積させたＮｉ−Ｆｅ膜のＤはδに対して、
Ｄ＜０．５８δである。それに対して、イオンアシスト
したときのＮｉ−Ｆｅ膜のＤはδに対して、Ｄ≧０．５
８δと大きくなった。図１０にイオンアシストの有無で
のＮｉ−Ｆｅ膜の比抵抗（ρ）の膜厚依存性を示す。イ
オンアシストしたＮｉ−Ｆｅ膜の比抵抗は、イオンアシ
ストしない膜のそれに比べて小さい。これは、図９に示
したように、イオンアシストしたＮｉ−Ｆｅ膜の結晶粒
径が、イオンアシストしない膜のそれよりも大きいこと
による。 （実施例３）ガラス基板上に下地膜として、膜厚２０ｎ
ｍのＴａ薄膜を形成し、真空を破らずにＮｉ−Ｆｅ−Ｃ
ｏ膜を形成した。膜形成にはマグネトロンスパッタ法を
用いて、圧力３ｍＴｏｒｒのＡｒプラズマによりターゲ
ットをスパッタした。Ｎｉ−Ｆｅ−Ｃｏ膜はＮｉ8 2 Ｆ
ｅ4 Ｃｏ1 4 合金ターゲットを用い、膜厚１０、１５、
２０および３０ｎｍの４種類作成した。FIG. 9 shows the crystal grain size D with respect to the film thickness δ of the Ni—Fe film. D has a positive correlation with δ. D of the Ni—Fe film deposited without ion assist is δ,
D <0.58δ. On the other hand, D of the Ni—Fe film when ion-assisted is δ with respect to δ, and D ≧ 0.5.
It increased to 8δ. FIG. 10 shows the film thickness dependence of the specific resistance (ρ) of the Ni—Fe film with and without ion assist. The specific resistance of the ion-assisted Ni-Fe film is smaller than that of the non-ion-assisted film. This is because, as shown in FIG. 9, the crystal grain size of the ion-assisted Ni-Fe film is larger than that of the non-ion-assisted film. (Example 3) A film having a thickness of 20 n is formed on a glass substrate as a base film.
m Ta film is formed, and Ni-Fe-C is formed without breaking vacuum.
o film was formed. A magnetron sputtering method was used for film formation, and a target was sputtered by Ar plasma at a pressure of 3 mTorr. Ni-Fe-Co film Ni 8 2 F
Using an e 4 Co 14 alloy target, film thickness 10, 15,
Four types of 20 and 30 nm were prepared.
【００１９】Ｘ線回折の結果、Ｔａ下地膜を設けたＮｉ
−Ｆｅ−Ｃｏ膜はＴａ膜上にエピタキシャル的に成長
し、面心立方格子（１１１）面が膜面に平行に配向した
結晶性の良好な膜となった。このとき、膜厚が３０ｎｍ
において２０μΩｃｍ以下の小さい比抵抗が得られた。
このときＤは、２４ｎｍであった。 （比較例３）実施例３と同様に、ただし、Ｔａ薄膜を設
けず、ガラス基板上に直接Ｎｉ−Ｆｅ−Ｃｏ膜を形成し
た。ガラス基板上に直接形成されたＮｉ−Ｆｅ−Ｃｏ膜
は、面心立方格子の（１１１）面からの回折強度が小さ
く、結晶性があまり良くない膜となった。ガラス基板上
に形成した、膜厚３０ｎｍのＮｉ−Ｆｅ−Ｃｏ膜のＤ
は、１１ｎｍであった。As a result of X-ray diffraction, Ni with a Ta underlayer was provided.
The -Fe-Co film was epitaxially grown on the Ta film and became a film with good crystallinity in which the face-centered cubic lattice (111) plane was oriented parallel to the film surface. At this time, the film thickness is 30 nm
In, a small specific resistance of 20 μΩcm or less was obtained.
At this time, D was 24 nm. (Comparative Example 3) As in Example 3, except that the Ta thin film was not provided, the Ni-Fe-Co film was formed directly on the glass substrate. The Ni-Fe-Co film formed directly on the glass substrate had a small diffraction intensity from the (111) plane of the face-centered cubic lattice and had a poor crystallinity. D of a Ni-Fe-Co film with a film thickness of 30 nm formed on a glass substrate
Was 11 nm.
【００２０】実施例１〜３および比較例１〜３の磁気抵
抗効果薄膜を用いて、図８に示すＭＲヘッドを作製し、
通電寿命の評価を行った。図８において、８１は磁気抵
抗効果薄膜、８２はＡｕ電極、８３は基板である。Ａｕ
電極８２の膜厚は２００ｎｍ、電極間隔は５μｍ、磁気
抵抗効果薄膜８１の幅は３μｍとした。評価時の電極密
度は１×１０7 Ａ／ｃｍ2 である。評価結果を表１に示
す。Using the magnetoresistive thin films of Examples 1 to 3 and Comparative Examples 1 to 3, the MR head shown in FIG.
The energization life was evaluated. In FIG. 8, 81 is a magnetoresistive thin film, 82 is an Au electrode, and 83 is a substrate. Au
The thickness of the electrode 82 was 200 nm, the electrode interval was 5 μm, and the width of the magnetoresistive thin film 81 was 3 μm. The electrode density at the time of evaluation is 1 × 10 7 A / cm 2 . Table 1 shows the evaluation results.
【００２１】[0021]
【表１】 [Table 1]
【００２２】この評価結果から、比較例の磁気抵抗効果
薄膜では、結晶粒界が多く存在し比抵抗が高いことか
ら、粒界での断線が発生しやすいのに対して、実施例の
磁気抵抗効果薄膜では、結晶粒界が減少した比抵抗が低
下したことから、粒界での断線が発生しにくくなったと
考えられる。From these evaluation results, in the magnetoresistive effect thin film of the comparative example, many crystal grain boundaries are present and the specific resistance is high, so that the wire breakage easily occurs at the grain boundary, while the magnetoresistive effect of the example In the effect thin film, it is considered that disconnection at the grain boundary was less likely to occur because the crystal grain boundary decreased and the specific resistance decreased.
【００２３】[0023]
【発明の効果】本発明によると、磁気抵抗効果膜の比抵
抗を小さくすることができる。その結果、本発明の磁気
抵抗効果膜を用いたＭＲヘッドでは、通電寿命が顕著に
長くなる。また、従来のＭＲヘッドに比べて、磁気抵抗
効果膜の比抵抗が小さいことから、素子に流す電流を増
すことが可能となり、ヘッドの再生出力を増大させるこ
とも可能となる。According to the present invention, the specific resistance of the magnetoresistive film can be reduced. As a result, the MR head using the magnetoresistive film of the present invention has a remarkably long energization life. Further, since the specific resistance of the magnetoresistive film is smaller than that of the conventional MR head, the current flowing through the element can be increased, and the reproduction output of the head can also be increased.
【００２４】また、本発明の製造方法により、非晶質基
板上に直接磁気抵抗効果薄膜を設けても、結晶粒径の大
きな膜を得ることができる。Further, according to the manufacturing method of the present invention, even if the magnetoresistive thin film is directly provided on the amorphous substrate, a film having a large crystal grain size can be obtained.
【図１】本発明実施例１のＮｉ−Ｆｅ膜のＸ線回折パタ
ンを示す図。FIG. 1 is a diagram showing an X-ray diffraction pattern of a Ni—Fe film of Example 1 of the present invention.
【図２】比較例のＮｉ−Ｆｅ膜のＸ線回折パタンを示す
図FIG. 2 is a diagram showing an X-ray diffraction pattern of a Ni—Fe film of a comparative example.
【図３】本発明の作用を説明するための図。FIG. 3 is a diagram for explaining the operation of the present invention.
【図４】本発明の作用を説明するための図。FIG. 4 is a diagram for explaining the operation of the present invention.
【図５】本発明の作用を説明するための図。FIG. 5 is a diagram for explaining the operation of the present invention.
【図６】本発明の作用を説明するための図。FIG. 6 is a diagram for explaining the operation of the present invention.
【図７】本発明の作用を説明するための図。FIG. 7 is a diagram for explaining the operation of the present invention.
【図８】本発明実施例のＭＲヘッドの構成図。FIG. 8 is a configuration diagram of an MR head according to an embodiment of the present invention.
【図９】本発明の作用を説明するための図。FIG. 9 is a diagram for explaining the operation of the present invention.
【図１０】本発明の作用を説明するための図。FIG. 10 is a diagram for explaining the operation of the present invention.
８１ 磁気抵抗効果膜 ８２ Ａｕ電極 ８３ 基板 81 Magnetoresistive film 82 Au electrode 83 Substrate
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 43/10 Ｈ０１Ｌ 43/10 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 43/10 H01L 43/10
Claims (2)
ｏの合金の多結晶集合体よりなる磁気抵抗効果薄膜にお
いて、膜厚δが１５ｎｍ＜δ＜４０ｎｍであり、かつ、
δと結晶粒径Ｄとの関係が、０．５８δ≦Ｄ≦δである
ことを特徴とする磁気抵抗効果薄膜。1. Ni-Fe or Ni-Fe-C
In a magnetoresistive effect thin film made of a polycrystalline aggregate of an alloy of o, the film thickness δ is 15 nm <δ <40 nm, and
A magnetoresistive effect thin film characterized in that the relationship between δ and crystal grain size D is 0.58δ ≦ D ≦ δ.
ｏの合金の多結晶集合体よりなる磁気抵抗効果薄膜の製
造方法において、膜堆積中に不活性ガスを加速し堆積中
の膜表面に衝撃を与えながら膜堆積を行うことを特徴と
する磁気抵抗効果薄膜の製造方法。2. Ni-Fe or Ni-Fe-C
In a method of manufacturing a magnetoresistive effect thin film made of a polycrystalline aggregate of an alloy of o, the magnetoresistive film is deposited while accelerating an inert gas during film deposition and impacting the film surface during deposition. Effect thin film manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5240978A JP2551350B2 (en) | 1993-09-28 | 1993-09-28 | Magnetoresistive thin film and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5240978A JP2551350B2 (en) | 1993-09-28 | 1993-09-28 | Magnetoresistive thin film and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0799114A JPH0799114A (en) | 1995-04-11 |
| JP2551350B2 true JP2551350B2 (en) | 1996-11-06 |
Family
ID=17067499
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5240978A Expired - Fee Related JP2551350B2 (en) | 1993-09-28 | 1993-09-28 | Magnetoresistive thin film and method of manufacturing the same |
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| Country | Link |
|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3233039B2 (en) * | 1996-08-28 | 2001-11-26 | 三菱自動車工業株式会社 | Control device for in-cylinder injection spark ignition internal combustion engine |
| KR100590211B1 (en) | 2002-11-21 | 2006-06-15 | 가부시키가이샤 덴소 | Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same |
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1993
- 1993-09-28 JP JP5240978A patent/JP2551350B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
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| JPH0799114A (en) | 1995-04-11 |
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