JP2551126Y2 - Ion implanter - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus, and more particularly to an ion implantation amount out mechanism.

[0002]

2. Description of the Related Art A conventional ion implantation amount counting mechanism has a wafer holder 4 for fixing a semiconductor wafer 3 and an implantation amount counter 2 for measuring an implanted ion beam 1 as shown in FIG. .

The injection amount is counted by accumulating the charge amount of the ion beam colliding with the semiconductor wafer 3 and the wafer boulder 4 by the injection amount counter 2.

[0004]

In the conventional ion implantation amount counting mechanism, when the ions are implanted into the semiconductor wafer, the gas released from the surface of the semiconductor wafer and the degree of vacuum around the semiconductor wafer due to other factors are reduced. In the case of deterioration, when the ion beam collides with the spatial molecules and the charge is transferred, the amount of charge entering the injection amount counter becomes apparently small, so that a difference occurs between the actual injected amount and the counted amount. There was a problem.

[0005]

The ion implantation counting mechanism of the present invention is provided with a beam shutter that is independent of the semiconductor wafer and the wafer holder and can count the implantation amount by periodically interrupting the ion beam.

[0006]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1A is a side view of an embodiment of the present invention. The wafer holder 4 for fixing the semiconductor wafer 3 has a ground potential, and the injection amount is counted by a beam shutter 5 completely independent of the wafer holder 4 and the injection amount counter 2 connected thereto.

FIG. 1B is a diagram of the beam shutter 5, and is a diagram showing an AA portion of FIG. 1A. The beam shutter 5 is in the form of a propeller. The ion beam is periodically interrupted, and the ion beam 1 is periodically collided, thereby simultaneously implanting ions into the semiconductor wafer 3 and counting the number of implanted ions. Can be.

[0008]

As described above, in the present invention, since the ion implantation amount counting mechanism is completely independent of the semiconductor wafer and the surrounding area where the degree of vacuum deteriorates, the neutral beam is generated by the collision of the ion beam and the space molecules. Erroneous counting of the injection amount when the occurrence of the error can be prevented.

[Brief description of the drawings]

FIG. 1 is a view showing an embodiment of the present invention, wherein FIG. 1A is a side view, and FIG. 1B is a view of an AA part of FIG.

FIG. 2 is a diagram showing a conventional technique.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ion beam 2 Injection amount counter 3 Semiconductor wafer 4 Wafer holder 5 Beam shutter

Claims (1)

(57) [Scope of request for utility model registration] 1. An ion beam implanted into a wafer,
An ion implantation apparatus having a beam shutter that periodically shuts off before colliding with a semiconductor wafer and counts an implantation amount.