JP2539359B2 - Ion beam processing method and device for semiconductor device - Google Patents
Ion beam processing method and device for semiconductor deviceInfo
- Publication number
- JP2539359B2 JP2539359B2 JP60060573A JP6057385A JP2539359B2 JP 2539359 B2 JP2539359 B2 JP 2539359B2 JP 60060573 A JP60060573 A JP 60060573A JP 6057385 A JP6057385 A JP 6057385A JP 2539359 B2 JP2539359 B2 JP 2539359B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- ion beam
- current
- processing
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000010884 ion-beam technique Methods 0.000 title claims description 47
- 238000003672 processing method Methods 0.000 title claims description 6
- 238000012545 processing Methods 0.000 claims description 46
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 16
- 150000002500 ions Chemical group 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010893 electron trap Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体装置、特にVLSI等をイオンビーム加工
するのに好適な方法及びその装置に関する。Description: FIELD OF THE INVENTION The present invention relates to a semiconductor device, and more particularly, to a method and an apparatus suitable for ion beam processing a VLSI or the like.
従来、「表面分析」染野、安盛編、講談社第４版1981
年９月１日発行、第61頁に記載してあるように、イオン
ビームを細く絞り、ターゲットに照射し、ターゲットを
加工することを目的とした装置はなく、ただ、SIMS「セ
コンダリー イオン マス スペストロコピー」（Seco
ndary Ion Mass Spectroscopy）の分野でビームをター
ゲットにあて、ターゲットの原子をスパッタして、出て
くる２次イオンを分析することは行なわれていた。も
し、SIMSの装置をイオンビーム加工装置と見るならば、
その加工終点検出は２次イオンの検出によって行なわれ
ると言える。しかし、本発明で言及しているイオンビー
ム加工装置はターゲットに照射するビーム電流自体がSI
MS等のビーム電流により２桁から３桁小さいため、発生
する２次イオンの量が少なく、それを加工の終点検出に
利用するのは困難である。また、２次イオンを検出しよ
うとした場合、２次イオンのエネルギーフィルタを備え
た高感度の質量分析計が必要となり、加工装置の価格を
大きく引き上げることになる。Previously, "Surface Analysis" Someno, Yasumori, Kodansha, 4th edition, 1981
As described on page 61, issued September 1, 2014, there is no device for narrowing the ion beam, irradiating the target, and processing the target, but SIMS “Secondary Ion Mass Space”. Strocopy "(Seco
In the field of ndary Ion Mass Spectroscopy, it has been practiced to apply a beam to a target, sputter target atoms, and analyze secondary ions that emerge. If you see the SIMS device as an ion beam processing device,
It can be said that the processing end point is detected by detecting secondary ions. However, in the ion beam processing apparatus referred to in the present invention, the beam current itself irradiating the target is SI
Since the beam current of MS or the like is two to three orders of magnitude smaller, the amount of secondary ions generated is small and it is difficult to utilize it for detecting the processing end point. In addition, when trying to detect the secondary ions, a highly sensitive mass spectrometer equipped with an energy filter for the secondary ions is required, which greatly increases the price of the processing apparatus.
本発明の目的は、半導体装置へのイオンビーム加工に
おける終点を簡単に、且つ高精度に検出できるようにし
た半導体装置へのイオンビーム加工方法及びその装置を
提供するにある。An object of the present invention is to provide an ion beam processing method for a semiconductor device and an apparatus therefor capable of easily and highly accurately detecting the end point in the ion beam processing for a semiconductor device.
本発明は、複数層を有する半導体装置の所望の個所に
集束させたイオンビームを偏向・走査して照射すること
により半導体装置の所望の個所を加工する方法であっ
て、イオンビームの照射により半導体装置からアース側
へ流れて半導体装置の層またはイオンビームの走査位置
に応じて最小値と振幅とが変化する電流を検出し、この
検出した電流の最小値または振幅の変化に基づいて半導
体装置の所定の層の加工の終点を検出することを特徴と
する半導体装置へのイオンビーム加工方法である。ま
た、本発明は、イオン源と、このイオン源から出射され
るイオンビームを複数層を有する半導体装置上の所望の
個所に集束させて偏向・走査して照射するイオンビーム
照射手段と、イオンビームを半導体装置上の所望の個所
に偏向・走査して照射することにより半導体装置からア
ース側へ流れて半導体装置の層またはイオンビームの走
査位置に応じて最小値と振幅とが変化する電流を検出す
る電流検出手段と、この電流検出手段で検出した半導体
装置からアース側へ流れる電流の最小値または振幅の変
化に基づいて半導体装置の所定の層の加工の終点を検出
する加工終点検出手段とを備えたことを特徴とする半導
体装置へのイオンビーム加工装置である。The present invention is a method for processing a desired portion of a semiconductor device by deflecting and scanning an ion beam focused on a desired portion of a semiconductor device having a plurality of layers to irradiate the semiconductor device with the irradiation of the ion beam. A current flowing from the device to the ground side, the minimum value and the amplitude of which change according to the scanning position of the layer or the ion beam of the semiconductor device, is detected, and the semiconductor device of the semiconductor device is detected based on the detected minimum value or the change of the amplitude. An ion beam processing method for a semiconductor device is characterized by detecting an end point of processing of a predetermined layer. The present invention also provides an ion source, an ion beam irradiation means for converging an ion beam emitted from the ion source to a desired position on a semiconductor device having a plurality of layers, deflecting and scanning, and irradiating the ion beam. By deflecting, scanning and irradiating a desired position on the semiconductor device, the current flowing from the semiconductor device to the ground side and detecting the current whose minimum value and amplitude change according to the scanning position of the semiconductor device layer or ion beam is detected. Current detecting means and processing end point detecting means for detecting an end point of processing of a predetermined layer of the semiconductor device based on a change in the minimum value or amplitude of the current flowing from the semiconductor device to the ground side detected by the current detecting means. An ion beam processing apparatus for a semiconductor device, which is characterized by being provided.
即ち本発明は、例えば第２図（ａ）に示すようにパッ
シベーション膜Ａ、アルミ配線層Ｂ、SiO2層Ｃ、シリコ
ン基板Ｄで、場所によってはアルミ配線層とSiO2層が数
層積層されたVLSI等の半導体装置をイオンビームを所定
の領域で例えば第２図（ｃ）に示すように走査して加工
していく際、シリコン基板から流れる基板電流が第２図
（ｂ）に示すように、パッシベーション膜を加工する領
域Ａは走査による電流の変化が小さく、アルミ層を加工
する領域Ｂは次に走査による電流の変化が大きくなり、
SiO2層Ｃを加工する領域は更に走査による電流の変化が
大きくなり、シリコン基板Ｄを加工する領域は最後に走
査による電流の変化は小さくなることに着目し、この基
板電流の変化を検出することによってイオンビーム加工
が必要とする層までの加工終点を高精度に検出できるよ
うにし、超微細加工を可能にしたものである。That is, the present invention is, for example, as shown in FIG. 2 (a), a passivation film A, an aluminum wiring layer B, a SiO 2 layer C, and a silicon substrate D, and several layers of an aluminum wiring layer and a SiO 2 layer are laminated depending on the place. When a semiconductor device such as a VLSI is processed by scanning an ion beam in a predetermined region, for example, as shown in FIG. 2 (c), the substrate current flowing from the silicon substrate is as shown in FIG. 2 (b). In the region A where the passivation film is processed, the change in current due to scanning is small, and in the region B where the aluminum layer is processed, the change in current due to scanning becomes large next.
Focusing on the fact that the change in current due to scanning becomes larger in the region where the SiO 2 layer C is processed and the change in current due to scanning becomes smaller last in the region where the silicon substrate D is processed, this change in substrate current is detected. As a result, the processing end point up to the layer required for ion beam processing can be detected with high accuracy, enabling ultrafine processing.
以下本発明を図に示す実施例に基づいて説明する。第
１図は本発明の半導体装置へのイオンビーム加工方法を
実施するためのイオンビーム加工装置の基本構成を示す
図である。即ち、イオン源１と引き出し電極３との間に
電圧をかけてイオンビーム２を引き出し、集束レンズ４
でターゲット９上にビームを集束する。イオン光学系に
は上記電極以外にビームディファイディングアパーチャ
５、ブランキング電極６、ブランキングアパーチャ７、
ディフレクタ電極８を設けている。ブランキング電極６
とはブランキング電極17から電圧を与え、イオンビーム
を高速で偏向し、ターゲット９上でのビームのオンオフ
を行なう。また、ディフレクタ電極８には、ディフレク
タコントローラ14からイオンビーム偏向電圧を与える
が、同じ偏向電圧をCRT15の偏向電極に与える。この
時、ターゲット９から発生する２次電子11をディテクタ
12で検出し、ヘッドアンプ13で増巾した信号でCRT15に
輝度変調をかけることにより、ターゲット９表面の２次
電子信号を得、走査電子顕微鏡と同じ原理で走査イオン
顕微鏡として、加工すべきターゲット９表面を観察でき
る。これで、加工位置決めを行なう。また、テーブル10
から取り出した電流を電流計16で計測し、レコーダ18に
記録している。The present invention will be described below based on embodiments shown in the drawings. FIG. 1 is a diagram showing a basic configuration of an ion beam processing apparatus for carrying out an ion beam processing method for a semiconductor device of the present invention. That is, a voltage is applied between the ion source 1 and the extraction electrode 3 to extract the ion beam 2, and the focusing lens 4
Then, the beam is focused on the target 9. In addition to the above electrodes, the ion optical system includes a beam defocusing aperture 5, a blanking electrode 6, a blanking aperture 7,
A deflector electrode 8 is provided. Blanking electrode 6
Is a voltage applied from the blanking electrode 17 to deflect the ion beam at high speed to turn the beam on and off the target 9. Further, the deflector controller 8 applies an ion beam deflection voltage to the deflector electrode 8, but the same deflection voltage is applied to the deflection electrode of the CRT 15. At this time, the secondary electron 11 generated from the target 9 is detected by the detector.
The secondary electron signal on the surface of the target 9 is obtained by subjecting the CRT 15 to brightness modulation with the signal detected by 12 and amplified by the head amplifier 13, and the target to be processed as a scanning ion microscope by the same principle as the scanning electron microscope. 9 surface can be observed. With this, processing positioning is performed. Also, table 10
The current taken out from is measured by the ammeter 16 and recorded in the recorder 18.
次に本発明の具体的実施例を説明する。 Next, specific examples of the present invention will be described.
＜実施例1.＞ 第３図は本発明の一実施例を示したものである。前述
の通り、イオンビーム２を引き出し、集束し、偏向し、
VLSI等の半導体装置９を加工する。この時、基板電流を
ヘッドアンプ20で増幅し、A/Dコンバータ21でデジタル
信号とし、メインコントローラ22へ入力する。また、基
板電流はビーム走査に同期して変化し、中央部の走査線
では小さく、上下端部の走査線では大きくなる。そこ
で、常に同じ走査線の信号が取れるようにデフレクタコ
ントローラ14からビーム走査の同期信号をメインコント
ローラ22へ入力している。メインコントローラ22は入力
された基板電流信号を処理し、例えばアルミ配線層Ｂま
での加工の終点を判断し、ブランキング電源17にオン信
号を送り、ビーム遮断して加工を停止する。Example 1 FIG. 3 shows an example of the present invention. As mentioned above, the ion beam 2 is extracted, focused, deflected,
The semiconductor device 9 such as VLSI is processed. At this time, the substrate current is amplified by the head amplifier 20, converted into a digital signal by the A / D converter 21, and input to the main controller 22. Further, the substrate current changes in synchronization with beam scanning, and is small in the central scanning line and large in the upper and lower scanning lines. Therefore, a beam scanning synchronization signal is input from the deflector controller 14 to the main controller 22 so that the same scanning line signal can always be obtained. The main controller 22 processes the input substrate current signal, judges the end point of processing up to, for example, the aluminum wiring layer B, sends an ON signal to the blanking power supply 17, shuts off the beam and stops the processing.
基板電流は加工が進行するに従い第４図（ａ）の様に
変化する。基板電流は１走査が終了し、次の走査に移る
時に最大値を示す。また、走査領域中央部では最小値と
なる。そこで、デフレクタコントローラ14から同期信号
受信時とその時から１走査の時間の1/2が経過した時の
電流値を抽出して第４図（ｂ）の様な基板電流の最大、
最小をモニタする。今回は１走査が１秒オーダーで比較
的遅いため、同期信号による信号抽出を行なったが、１
操作を速くした場合には同期信号をトリガーとしてA/D
コンバータ21を動作させる方式に替える。第４図（ｂ）
の様に最小値を得、最小値の時間変化からだけでも加工
の終点検出は可能であるが、半導体の構造によっては最
小値に材質による著しい変動が見られない場合がある。
その場合には基板電流の最大値と最小値の差を計算し、
第４図（ｃ）の様な変化巾のモニタリングを行ない良好
な終点検出が可能となる。The substrate current changes as shown in FIG. 4 (a) as the processing progresses. The substrate current shows the maximum value when one scan is completed and the next scan is started. Further, it becomes the minimum value in the central portion of the scanning area. Therefore, the maximum current of the substrate as shown in FIG. 4 (b) is extracted by extracting the current value at the time of receiving the synchronization signal from the deflector controller 14 and when 1/2 of the time for one scan has passed from that time.
Monitor the minimum. Since 1 scan is relatively slow on the order of 1 second this time, signal extraction was performed using the synchronization signal.
When operating faster, the sync signal triggers A / D
Change to a method of operating the converter 21. Fig. 4 (b)
It is possible to detect the processing end point only by obtaining the minimum value and changing the minimum value with time, but depending on the structure of the semiconductor, the minimum value may not show a significant variation due to the material.
In that case, calculate the difference between the maximum and minimum values of the substrate current,
By monitoring the range of change as shown in FIG. 4 (c), a good end point can be detected.
現在、加工速度は0.1μm3/sec程度である。２μｍ×
２μｍの矩形加工を行なうとすると深さ方向の加工速度
は0.025μm/secとなる。一走査を１秒として加工を進め
ているが、終点の判断は４点を順次比較して行なうた
め、終点の判断中に0.1μｍ加工が進行する。しかし、
層間絶縁膜の厚さは１μｍ程度であり実用上0.1μｍ加
工が進んでも問題はなく、終点検出精度は充分である。
もし、さらに高精度の加工終点検出が必要ならば走査速
度を速めるか走査線数を減らし、一走査で加工される深
さを減らせば良い。Currently, the processing speed is about 0.1 μm 3 / sec. 2 μm x
If a rectangular processing of 2 μm is performed, the processing speed in the depth direction will be 0.025 μm / sec. The processing is advanced with one scan for 1 second, but the end point is judged by sequentially comparing four points, so that 0.1 μm processing proceeds during the judgment of the end point. But,
The thickness of the interlayer insulating film is about 1 μm, and there is no problem even if the processing proceeds to 0.1 μm practically, and the end point detection accuracy is sufficient.
If it is necessary to detect the processing end point with higher accuracy, the scanning speed may be increased or the number of scanning lines may be reduced to reduce the depth processed in one scanning.
＜実施例2.＞ 第５図は本実施例の説明図である。本実施例では２次
電子の効果を除き純粋な基板電流の変化のみをモニタで
きる事を考えた。２次電子11は引き込み電源23から引き
込み電極24にプラス電位を与え、そのほとんどをファラ
デーカップ26中へ導入する。ファラデーカップ26にはそ
こから発生する２次電子を逃がさない様に電子トラップ
電極25にトラップ電源27からマイナス電位をかける。ま
た、ファラデーカップ26自身を２次電子加速電源28でプ
ラス電位に浮かしている。２次電子電流は基板電流と同
様にヘッドアンプ29で増巾した後、減算器30で基板電流
から減算される。２次電子の効果を除いた基板電流をA/
Dコンバータ31を通しメインコントローラ22で信号処理
し、加工の終点を判断しブランキング電源17にオン信号
を送って加工を停止する。２次電子の効果を除いた基板
電流の変化は第４図（ｂ）に示した基板電流の最小値の
変化に近いものが得られるが、それは完全に基板へのリ
ーク電流のみを反映したものであり、終点検出の信頼性
が高くなる。ただ、終点の判断は実施例1.と同じ方式の
ため、0.1μｍの誤差を生ずる。しかし、実用上問題と
はならない。<Embodiment 2> FIG. 5 is an explanatory diagram of this embodiment. In the present embodiment, it was considered that only the change in the pure substrate current can be monitored excluding the effect of secondary electrons. The secondary electrons 11 apply a positive potential to the pull-in electrode 24 from the pull-in power source 23, and most of them are introduced into the Faraday cup 26. To the Faraday cup 26, a negative potential is applied from the trap power supply 27 to the electron trap electrode 25 so as not to let secondary electrons generated therefrom escape. Further, the Faraday cup 26 itself is floated at a positive potential by the secondary electron acceleration power supply 28. Similarly to the substrate current, the secondary electron current is amplified by the head amplifier 29 and then subtracted from the substrate current by the subtractor 30. Substrate current excluding the effect of secondary electrons is A /
Signal processing is performed by the main controller 22 through the D converter 31, the end point of machining is determined, an ON signal is sent to the blanking power supply 17, and machining is stopped. The change in the substrate current excluding the effect of secondary electrons is similar to the change in the minimum value of the substrate current shown in Fig. 4 (b), which completely reflects only the leak current to the substrate. Therefore, the reliability of the end point detection becomes high. However, since the determination of the end point is the same as that of the first embodiment, an error of 0.1 μm occurs. However, this is not a problem in practice.
以上説明したように、本発明によれば、0.1μ以下の
精度で加工の終点検出が可能であるので、実用上問題に
ならない程度に下部への損傷を抑えた状態で終点を検出
することができる。また、半導体装置からアース側へ流
れて半導体装置の層またはイオンビームの走査位置に応
じて最小値と振幅とが変化する電流を検出する方法を採
用したので、従来と比べてより単純な構成で、高精度に
加工の終点を検出することが可能になった。As described above, according to the present invention, since it is possible to detect the end point of processing with an accuracy of 0.1 μ or less, it is possible to detect the end point in a state where damage to the lower portion is suppressed to a degree that does not pose a practical problem. it can. Further, since a method of detecting a current that flows from the semiconductor device to the ground side and whose minimum value and amplitude change according to the layer of the semiconductor device or the scanning position of the ion beam is adopted, the configuration is simpler than the conventional one. , It has become possible to detect the end point of machining with high accuracy.
第１図はイオンビーム加工装置の構成図、第２図は加工
過程を示す説明図、第３図は実施例1.の機器構成図、第
４図は基板電流の信号処理を示す説明図、第５図は実施
例2.の機器構成図である。 １……イオン源、２……イオンビーム、３……引き出し
電極、４……集速レンズ、５……ビームディファイディ
ングアパーチャ、６……ブランキング電極、７……ブラ
ンキングアパチャー、８……デフレクタ電極、９……タ
ーゲット、10……テーブル、11……２次電子、12……２
次電子ディテクタ、13……ヘッドアンプ、14……デフレ
クタコントローラ、15……CRT、16……電流計、17……
ブランキング電源、19……レコーダ、20……ヘッドアン
プ、21……A/Dコンバータ、22……メインコントロー
ラ、23……２次電子引き込み電源、24……２次電子引き
込み電極、25……２次電子トラップ電極、26……ファラ
デーカップ、27……２次電子トラップ電極、28……２次
電子加速電源、29……ヘッドアンプ、30……減算器、31
……A/Dコンバータ。FIG. 1 is a configuration diagram of an ion beam processing apparatus, FIG. 2 is an explanatory diagram showing a processing process, FIG. 3 is an apparatus configuration diagram of Example 1, and FIG. 4 is an explanatory diagram showing signal processing of substrate current, FIG. 5 is a device configuration diagram of the second embodiment. 1 ... Ion source, 2 ... Ion beam, 3 ... Extraction electrode, 4 ... Collecting lens, 5 ... Beam defocusing aperture, 6 ... Blanking electrode, 7 ... Blanking aperture, 8 ... Deflector electrode, 9 ... Target, 10 ... Table, 11 ... Secondary electron, 12 ... 2
Next electronic detector, 13 …… Head amplifier, 14 …… Deflector controller, 15 …… CRT, 16 …… Ammeter, 17 ……
Blanking power supply, 19 …… Recorder, 20 …… Head amplifier, 21 …… A / D converter, 22 …… Main controller, 23 …… Secondary electron pulling power supply, 24 …… Secondary electron pulling electrode, 25 …… Secondary electron trap electrode, 26 …… Faraday cup, 27 …… Secondary electron trap electrode, 28 …… Secondary electron acceleration power supply, 29 …… Head amplifier, 30 …… Subtractor, 31
…… A / D converter.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮内 建興 横浜市戸塚区吉田町292番地 株式会社 日立製作所生産技術研究所内 (72)発明者 宇佐美 光雄 小平市上水本町1450番地 株式会社日立 製作所デバイス開発センター内 (72)発明者 高橋 貴彦 小平市上水本町1450番地 株式会社日立 製作所デバイス開発センター内 (72)発明者 中村 英夫 国分寺市東恋ケ窪一丁目280番地 株式 会社日立製作所中央研究所内 (56)参考文献 特開 昭59−208830（ＪＰ，Ａ) 特開 昭60−200529（ＪＰ，Ａ) 特開 昭58−202038（ＪＰ，Ａ) 特開 昭57−9877（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Kenko Miyauchi, 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Hitachi, Ltd., Institute of Industrial Science (72) Inventor, Mitsuo Usami, 1450, Kamimizu-honmachi, Kodaira, Hitachi Device Development In the center (72) Inventor Takahiko Takahashi 1450, Kamimizuhonmachi, Kodaira City Hitachi, Ltd. Device Development Center (72) Inventor Hideo Nakamura 1-280, Higashi Koikekubo, Kokubunji City Central Research Laboratory, Hitachi Ltd. (56) References JP-A-59-208830 (JP, A) JP-A-60-200529 (JP, A) JP-A-58-202038 (JP, A) JP-A-57-9877 (JP, A)
Claims (6)
集束させたイオンビームを偏向・走査して照射すること
により前記半導体装置の所望の個所を加工する方法であ
って、前記イオンビームの照射により前記半導体装置か
らアース側へ流れて前記半導体装置の層または前記イオ
ンビームの走査位置に応じて最小値と振幅とが変化する
電流を検出し、該検出した電流の最小値または振幅の変
化に基づいて前記半導体装置の所定の層の加工の終点を
検出することを特徴とする半導体装置へのイオンビーム
加工方法。1. A method of processing a desired portion of a semiconductor device by deflecting and scanning a focused ion beam to a desired portion of a semiconductor device having a plurality of layers, and irradiating the ion beam. A current that flows from the semiconductor device to the ground side by irradiation and whose minimum value and amplitude change according to the layer of the semiconductor device or the scanning position of the ion beam is detected, and the minimum value or amplitude of the detected current is changed. An ion beam processing method for a semiconductor device, characterized in that an end point of processing of a predetermined layer of the semiconductor device is detected based on the above.
査に同期して行なうことを特徴とする特許請求の範囲第
１項記載の半導体装置へのイオンビーム加工方法。2. The method for processing an ion beam on a semiconductor device according to claim 1, wherein the detection of the current is performed in synchronization with the scanning of the ion beam.
半導体装置からアース側へ流出する電流と共に前記半導
体装置から放出される２次荷電粒子電流も検出し、前記
半導体装置からアース側へ流出する前記電流値と前記２
次荷電粒子電流値との差に基づいて前記半導体装置の加
工の終点を検出することを特徴とする特許請求の範囲第
１項記載の半導体装置へのイオンビーム加工方法。3. When irradiating with the ion beam, a secondary charged particle current emitted from the semiconductor device together with a current flowing out from the semiconductor device to the ground side is also detected and flows out from the semiconductor device to the earth side. The current value and the 2
The ion beam processing method for a semiconductor device according to claim 1, wherein an end point of processing of the semiconductor device is detected based on a difference from a next charged particle current value.
オンビームを複数層を有する半導体装置上の所望の個所
に集束させて偏向・走査して照射するイオンビーム照射
手段と、前記イオンビームを前記半導体装置上の所望の
個所に偏向・走査して照射することにより前記半導体装
置からアース側へ流れて前記半導体装置の層または前記
イオンビームの走査位置に応じて最小値と振幅とが変化
する電流を検出する電流検出手段と、該電流検出手段で
検出した前記半導体装置からアース側へ流れる電流の最
小値または振幅の変化に基づいて前記半導体装置の所定
の層の加工の終点を検出する加工終点検出手段とを備え
たことを特徴とする半導体装置へのイオンビーム加工装
置。4. An ion source, an ion beam irradiation means for converging an ion beam emitted from the ion source to a desired position on a semiconductor device having a plurality of layers, deflecting and scanning, and irradiating the ion beam. Is deflected / scanned at a desired position on the semiconductor device to irradiate, and the minimum value and the amplitude change depending on the layer of the semiconductor device or the scanning position of the ion beam. Current detecting means for detecting the current to be detected, and the end point of processing of a predetermined layer of the semiconductor device is detected based on a change in the minimum value or amplitude of the current flowing from the semiconductor device to the ground side detected by the current detecting means. An ion beam processing apparatus for a semiconductor device, which is provided with processing end point detecting means.
偏向・走査する前記イオンビーム照射手段の偏向信号に
同期して、前記電流をサンプリングすることを特徴とす
る特許請求の範囲第４項記載の半導体装置へのイオンビ
ーム加工装置。5. The electric current detecting means samples the electric current in synchronism with a deflection signal of the ion beam irradiating means for deflecting / scanning the ion beam. Ion beam processing equipment for semiconductor devices.
は、前記イオンビームを前記半導体装置上の所望の個所
に偏向・走査して照射することにより前記半導体装置か
ら得られる２次荷電粒子を検出する２次荷電粒子検出手
段を更に備え、前記加工終点検出手段は、前記２次荷電
粒子検出手段で検出した２次荷電粒子電流値と、前記電
流検出手段で検出した前記半導体装置からアース側へ流
れて該半導体装置の層に応じて最小値と振幅とが変化す
る電流値との差に基づいて、前記半導体装置の所定の層
の加工の終点を検出することを特徴とする特許請求の範
囲第４項記載の半導体装置へのイオンビーム加工装置。6. An ion beam processing apparatus for the semiconductor device detects secondary charged particles obtained from the semiconductor device by deflecting and scanning the ion beam at a desired position on the semiconductor device and irradiating the ion beam. Further comprising secondary charged particle detection means, wherein the processing end point detection means is a secondary charged particle current value detected by the secondary charged particle detection means and the semiconductor device detected by the current detection means to the ground side. The end point of processing of a predetermined layer of the semiconductor device is detected based on a difference between a minimum value and a current value whose amplitude changes depending on the layer of the semiconductor device. An ion beam processing apparatus for the semiconductor device according to the fourth aspect.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060573A JP2539359B2 (en) | 1985-03-27 | 1985-03-27 | Ion beam processing method and device for semiconductor device |
| KR8602240A KR900005783B1 (en) | 1985-03-27 | 1986-03-26 | Ion beam cutting method and device thereof for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060573A JP2539359B2 (en) | 1985-03-27 | 1985-03-27 | Ion beam processing method and device for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61220330A JPS61220330A (en) | 1986-09-30 |
| JP2539359B2 true JP2539359B2 (en) | 1996-10-02 |
Family
ID=13146134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60060573A Expired - Lifetime JP2539359B2 (en) | 1985-03-27 | 1985-03-27 | Ion beam processing method and device for semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2539359B2 (en) |
| KR (1) | KR900005783B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753253B1 (en) * | 1986-06-18 | 2004-06-22 | Hitachi, Ltd. | Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams |
| JPH0316125A (en) * | 1989-03-30 | 1991-01-24 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4358338A (en) * | 1980-05-16 | 1982-11-09 | Varian Associates, Inc. | End point detection method for physical etching process |
| JPS58202038A (en) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Ion beam processing apparatus |
| JPS59208830A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Ion beam processing method and device thereof |
| JPS60200529A (en) * | 1984-03-24 | 1985-10-11 | Mitsubishi Electric Corp | Process of ion-beam etching |
-
1985
- 1985-03-27 JP JP60060573A patent/JP2539359B2/en not_active Expired - Lifetime
-
1986
- 1986-03-26 KR KR8602240A patent/KR900005783B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61220330A (en) | 1986-09-30 |
| KR900005783B1 (en) | 1990-08-11 |
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