JP2527009Y2 - ダイヤモンドウィンドー - Google Patents
ダイヤモンドウィンドーInfo
- Publication number
- JP2527009Y2 JP2527009Y2 JP1990045262U JP4526290U JP2527009Y2 JP 2527009 Y2 JP2527009 Y2 JP 2527009Y2 JP 1990045262 U JP1990045262 U JP 1990045262U JP 4526290 U JP4526290 U JP 4526290U JP 2527009 Y2 JP2527009 Y2 JP 2527009Y2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- window
- film
- wafer
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 title claims description 43
- 229910003460 diamond Inorganic materials 0.000 title claims description 43
- 239000000463 material Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000002834 transmittance Methods 0.000 description 11
- 229910052790 beryllium Inorganic materials 0.000 description 7
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990045262U JP2527009Y2 (ja) | 1990-04-27 | 1990-04-27 | ダイヤモンドウィンドー |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990045262U JP2527009Y2 (ja) | 1990-04-27 | 1990-04-27 | ダイヤモンドウィンドー |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH044287U JPH044287U (enrdf_load_stackoverflow) | 1992-01-16 |
JP2527009Y2 true JP2527009Y2 (ja) | 1997-02-26 |
Family
ID=31559279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990045262U Expired - Lifetime JP2527009Y2 (ja) | 1990-04-27 | 1990-04-27 | ダイヤモンドウィンドー |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2527009Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10244144A (ja) * | 1997-03-04 | 1998-09-14 | Sumitomo Electric Ind Ltd | 圧力隔壁 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0177976U (enrdf_load_stackoverflow) * | 1987-11-13 | 1989-05-25 |
-
1990
- 1990-04-27 JP JP1990045262U patent/JP2527009Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH044287U (enrdf_load_stackoverflow) | 1992-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0476827B1 (en) | X-ray window and method of producing same | |
JP2823276B2 (ja) | X線マスクの製造方法および薄膜の内部応力制御装置 | |
US5258091A (en) | Method of producing X-ray window | |
JP3344441B2 (ja) | 表面弾性波素子 | |
JPS599921A (ja) | X線マスク用フイルム及びその製造方法 | |
US4941942A (en) | Method of manufacturing a mask support of sic for x-ray lithography masks | |
EP0676772B1 (en) | Method of manufacturing of X-ray windows | |
JPH0864524A (ja) | X線吸収マスクの製造方法 | |
Jones et al. | Re‐emission Coefficients of Si and SiO2 Films Deposited through rf and dc Sputtering | |
US5291536A (en) | X-ray mask, method for fabricating the same, and pattern formation method | |
JPH02208601A (ja) | 光学用窓材及びその製造方法 | |
JP2527009Y2 (ja) | ダイヤモンドウィンドー | |
JPH06289145A (ja) | X線窓材及びその製造方法 | |
EP0332130B1 (en) | X-ray exposure masks | |
JP3220523B2 (ja) | X線マスク | |
JP2634183B2 (ja) | ダイヤモンド結晶の形成方法 | |
US5335256A (en) | Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction | |
GB2288272A (en) | X-ray windows | |
JPH10300912A (ja) | 回折格子用基板 | |
JP3437389B2 (ja) | 電子線およびx線リソグラフィ用マスクメンブレン | |
JP3032262B2 (ja) | X線マスクの製造方法 | |
JPH11505602A (ja) | 薄い放射線透過性窓の製造方法 | |
US5246802A (en) | X-ray permeable membrane for X-ray lithographic mask | |
JP3866912B2 (ja) | リソグラフィ用マスク基板およびその製造方法 | |
JPH0786560B2 (ja) | X―線透過窓の製造方法 |