JP2526961B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
JP2526961B2
JP2526961B2 JP63006111A JP611188A JP2526961B2 JP 2526961 B2 JP2526961 B2 JP 2526961B2 JP 63006111 A JP63006111 A JP 63006111A JP 611188 A JP611188 A JP 611188A JP 2526961 B2 JP2526961 B2 JP 2526961B2
Authority
JP
Japan
Prior art keywords
metal frame
heat block
semiconductor chip
semiconductor device
external lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63006111A
Other languages
Japanese (ja)
Other versions
JPH01184839A (en
Inventor
一博 吉野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63006111A priority Critical patent/JP2526961B2/en
Publication of JPH01184839A publication Critical patent/JPH01184839A/en
Application granted granted Critical
Publication of JP2526961B2 publication Critical patent/JP2526961B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7865—Means for transporting the components to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体装置の製造方法に関し、特に半導体
チツプの表面電極、あるいは外部リードと金属細線との
接続工程における製造装置の改良に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to improvement of a manufacturing device in a process of connecting a surface electrode of a semiconductor chip or an external lead and a fine metal wire. .

〔従来の技術〕[Conventional technology]

第４図は半導体チツプの表面電極、あるいは外部リー
ドと金属細線との従来の接続工程における半導体装置の
製造方法を示す断面図である。（１）は半導体チツプで
あり金属フレーム（２）のダイパツト（2a）上に、
（３）の導電性接着剤を介し固定されている。ダイパツ
ド（2a）、外部リード（2b）の下に、ヒートブロツク
（５）がある。（４）の金属細線は、半導体チツプ
（１）の表面にある表面電極（1a）と、金属フレーム
（２）の外部リード（2b）の間を接続し、半導体として
の電気的特性を引き出す役目をする。第５図は第４図に
示した従来例を改良した他の従来例で半導体装置の製造
方法を示す断面図である。図において（６）はヒートブ
ロツク内蔵電磁石、（７）はヒートブロツク内蔵電磁石
（６）に電流を供給する外部電源ユニツトで、その他の
符号は第４図にて説明したものと同等である。FIG. 4 is a cross-sectional view showing a method of manufacturing a semiconductor device in a conventional connecting process between a surface electrode of a semiconductor chip or an external lead and a fine metal wire. (1) is a semiconductor chip, and on the die pad (2a) of the metal frame (2),
It is fixed via the conductive adhesive of (3). Below the die pad (2a) and the external lead (2b), there is a heat block (5). The thin metal wire of (4) connects between the surface electrode (1a) on the surface of the semiconductor chip (1) and the external lead (2b) of the metal frame (2) to bring out electrical characteristics as a semiconductor. do. FIG. 5 is a sectional view showing a method of manufacturing a semiconductor device in another conventional example which is an improvement of the conventional example shown in FIG. In the figure, (6) is an electromagnet with a built-in heat block, (7) is an external power supply unit for supplying a current to the electromagnet (6) with a built-in heat block, and other reference numerals are the same as those described in FIG.

次に動作について第４図により説明する。金属フレー
ム（２）のダイパツド（2a）上に導電性接着剤（３）を
介し、接続された半導体チツプ（１）は、台座であるヒ
ートブロツク（５）上にて半導体チツプ（１）の表面電
極（1a）と、金属フレーム（２）の外部リード部（2b）
とを金属細線（４）で超音波熱圧着ワイヤボンド装置で
接続される。Next, the operation will be described with reference to FIG. The semiconductor chip (1) connected to the die pad (2a) of the metal frame (2) via the conductive adhesive (3) is the surface of the semiconductor chip (1) on the pedestal heat block (5). Electrode (1a) and external lead (2b) of metal frame (2)
And the metal thin wires (4) are connected by an ultrasonic thermocompression wire bonding device.

上記方法は金属細線（４）を表面電極（1a）にボール
ボンドする際、あるいは外部リード（2b）にステツチボ
ンドする時、金属フレーム（２）とヒートブロツク
（５）が密着していないことにより、金属細線（４）と
表面電極（1a）、あるいは外部リード（2b）との接続中
に金属フレーム（２）が振動するため、確実な接続強度
が得られず、最悪の場合はく離するという問題があつ
た。この様な問題点の対策として第５図に示すごとく、
ヒートブロツク（５）内にヒートブロツク内蔵電磁石
（６）を埋め、外部電源ユニツト（７）で必要時ヒート
ブロツク内蔵電磁石（６）を烈磁させ、ヒートブロツク
（５）を磁化させることで、金属フレーム（２）をヒー
トブロツク（５）と密着させることが行われた。In the above method, when the metal thin wire (4) is ball-bonded to the surface electrode (1a) or when the external lead (2b) is stitch-bonded, the metal frame (2) and the heat block (5) do not adhere to each other. Since the metal frame (2) vibrates during the connection between the thin metal wire (4) and the surface electrode (1a) or the external lead (2b), a reliable connection strength cannot be obtained, and in the worst case, there is a problem of peeling. Atsuta As shown in FIG. 5, as a countermeasure against such a problem,
By embedding the electromagnet (6) with a built-in heat block in the heat block (5) and magnetizing the electromagnet (6) with a built-in heat block when necessary by the external power supply unit (7), the heat block (5) is magnetized. The frame (2) was brought into close contact with the heat block (5).

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

以上説明したように従来の半導体装置の製造方法は構
造が複雑であり、又、ヒートブロツクが長期使用により
磁化され、次の半導体チツプの加工に移行する際、金属
フレームとヒートブロツクの離れが悪く変形を起こすな
どの問題があつた。As described above, the conventional semiconductor device manufacturing method has a complicated structure, and the heat block is magnetized by long-term use, and when the process shifts to the next semiconductor chip, the separation between the metal frame and the heat block is poor. There was a problem such as deformation.

この発明は上記のような問題点を解消するためになさ
れたもので、構造が比較的簡単、且つ金属フレームの変
形をひき起こさず、半導体チツプの表面電極、あるいは
外部リードと金属細線との接続に当つて、確実な接続強
度を得ることができる装置を提供しようとするものであ
る。The present invention has been made to solve the above-mentioned problems, and has a relatively simple structure and does not cause deformation of a metal frame, and allows connection between a surface electrode of a semiconductor chip or an external lead and a fine metal wire. Therefore, it is an object of the present invention to provide a device capable of obtaining a reliable connection strength.

〔課題を解決するための手段〕[Means for solving the problem]

この発明は半導体チツプの表面電極、あるいは外部リ
ードと金属細線とを接続する際、台座となるヒートブロ
ツクに永久磁石を埋め込み、金属フレームに外部より電
磁石でヒートブロツク内の永久磁石の逆極性の磁力を供
給させ、金属フレームとヒートブロツクとの密着を強く
し、次の半導体チツプの外部リードを接続する作業のた
め、金属フレームを送る際は、金属フレームに供給して
いた磁力をヒートブロツク内の永久磁石と同一極性に切
換え、反発力を利用して金属フレームとヒートブロツク
の離れを確実にしたものである。This invention embeds a permanent magnet in the heat block that serves as a pedestal when connecting the surface electrode of the semiconductor chip or the external lead and the metal thin wire, and uses an electromagnet from the outside to the magnetic force of the opposite polarity of the permanent magnet in the heat block in the metal frame. To strengthen the close contact between the metal frame and the heat block and to connect the external leads of the next semiconductor chip.When sending the metal frame, the magnetic force that was being supplied to the metal frame was The polarity is switched to the same as that of the permanent magnet, and the repulsive force is used to ensure separation between the metal frame and the heat block.

〔作用〕[Action]

この発明では半導体チツプの表面電極、あるいは外部
リードと金属細線とを接続する際、金属フレームとヒー
トブロツクが密着しているので、表面電極、及び外部リ
ードが自由に振動することがなく、接続部の接続不良が
防止でき、且つ、金属フレームを送る際もヒートブロツ
クと金属フレームは確実に離れるため、金属フレームの
変形も防止できる。In this invention, when connecting the surface electrode of the semiconductor chip or the external lead and the metal thin wire, since the metal frame and the heat block are in close contact with each other, the surface electrode and the external lead do not freely vibrate, and the connecting portion Connection failure can be prevented, and since the heat block and the metal frame are reliably separated when the metal frame is sent, the deformation of the metal frame can also be prevented.

〔発明の実施例〕Example of Invention

以下、この発明の一実施例を図について説明する。第
１図は半導体装置の製造方法を示す断面図である。図に
おいて、（１）ないし（５）は第４図の従来例で示した
ものと同等であるので説明の重複を避ける。（８）はヒ
ートブロツク（５）の中に埋め込まれたＮ極（又はＳ
極）の永久磁石であり、ワイヤボンド工程はこの永久磁
石（８）を内蔵したヒートブロツク（５）上で行なう。
（９）は金属フレーム（２）に外部よりＳ極,N極の磁力
を供給する回転可能な磁力供給端子である。磁力供給端
子（９）の断面図を第２図に示す。（10）は磁力供給端
子へ磁力を発生させる電磁石、（11）は磁化方向切換電
源ユニツトである。第３図はこの実施例による半導体装
置の製造方法を示す斜視図である。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a method of manufacturing a semiconductor device. In the figure, (1) to (5) are equivalent to those shown in the conventional example of FIG. (8) is the N pole (or S) embedded in the heat block (5)
This is a permanent magnet of the pole), and the wire bonding process is performed on the heat block (5) containing the permanent magnet (8).
Reference numeral (9) is a rotatable magnetic force supply terminal for supplying the magnetic force of the S pole and the N pole from the outside to the metal frame (2). A sectional view of the magnetic force supply terminal (9) is shown in FIG. (10) is an electromagnet that generates a magnetic force to a magnetic force supply terminal, and (11) is a magnetization direction switching power supply unit. FIG. 3 is a perspective view showing a method of manufacturing a semiconductor device according to this embodiment.

次に動作について説明する。第１図において、金属フ
レーム（２）のダイパツド（2a）上に導電性接着剤
（３）を介し接続された半導体チツプ（１）は、Ｎ極性
（又はＳ極性）の磁力を持つた永久磁石（８）を内部に
持つヒートブロツク（５）上で待機する。この時、金属
フレーム（２）と接触している磁力供給端子（９）に、
磁化方向切替電源ユニツト（11）より電極石（10）に電
流を供給することにより磁化させ、永久磁石（８）の逆
極性を与えると、金属フレーム（２），ダイパツド（2
a），外部リード（2b）は磁化され、永久磁石（８）内
蔵のヒートブロツク（５）と引き合い密着する。その
後、金属細線（４）により半導体チツプ（１）表面の表
面電極（1a）と外部リード（2b）とを接続する。金属細
線（４）による接続完了後、電磁石（10）の極性を永久
磁石（８）と同一極性に磁化方向切替電源ユニツト（1
1）により切換える。金属フレーム（２），ダイパツド
（2a），外部リード（2b）はヒートブロツク（５）内の
永久磁石（８）の磁力と反発し浮き上がる。この状態で
金属フレーム（２）を送り、次のダイパツド（2a）上の
半導体チツプ（１）に対して金属細線（４）による接続
を行なう。Next, the operation will be described. In FIG. 1, a semiconductor chip (1) connected to a die pad (2a) of a metal frame (2) through a conductive adhesive (3) is a permanent magnet having a magnetic force of N polarity (or S polarity). Stand by on the heat block (5) that has (8) inside. At this time, the magnetic force supply terminal (9) in contact with the metal frame (2),
The magnetizing direction switching power supply unit (11) supplies a current to the electrode stone (10) to magnetize the electrode stone (10) to give the opposite polarity of the permanent magnet (8), and the metal frame (2) and die pad (2)
a) The external lead (2b) is magnetized and attracts and closely contacts the heat block (5) with the permanent magnet (8) built therein. After that, the surface electrode (1a) on the surface of the semiconductor chip (1) and the external lead (2b) are connected by the thin metal wire (4). After the connection with the thin metal wire (4) is completed, the polarity of the electromagnet (10) is changed to the same polarity as the permanent magnet (8).
Switch according to 1). The metal frame (2), die pad (2a), and external leads (2b) repel the magnetic force of the permanent magnet (8) in the heat block (5) and float up. In this state, the metal frame (2) is fed, and the semiconductor chip (1) on the next die pad (2a) is connected by the metal thin wire (4).

〔発明の効果〕〔The invention's effect〕

この発明は以上のように台座となるヒートブロツクに
永久磁石を設け、金属フレームに外部より電磁石により
磁力を供給するように構成したので、装置構造が比較的
簡単にでき、金属フレームとヒートブロツクの密着と分
離が確実にできるため、金属フレームの変形を防止で
き、且つ金属細線を半導体チツプの表面電極、及び外部
リード部に接続する際、表面電極、及び外部リードの振
動をおさえる事ができるので、接続部の接続不良、ある
いははく離を防止できる効果が得られる。As described above, the present invention is configured such that the pedestal heat block is provided with a permanent magnet and the magnetic force is externally supplied to the metal frame by an electromagnet, so that the device structure can be relatively simple, and the metal frame and the heat block are Since the close contact and separation can be ensured, the deformation of the metal frame can be prevented, and when connecting the thin metal wire to the surface electrode of the semiconductor chip and the external lead portion, the vibration of the surface electrode and the external lead can be suppressed. The effect of preventing connection failure or peeling of the connection portion can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第１図はこの発明の一実施例による半導体装置の製造方
法を示す断面図、第２図は第１図のＡ−Ａにおける断面
図、第３図は第１図に示す製造方法の斜視図、第４図は
従来の半導体装置の製造方法の一実施例を示す断面図、
第５図は従来の半導体装置の製造方法の他の実施例を示
す断面図である。 図において（１）は半導体チツプ、（1a）は表面電極、
（２）は金属フレーム、（2a）はダイパツド、（2b）は
外部リード、（３）は導電性接着剤、（４）は金属細
線、（５）はヒートブロツク、（８）は永久磁石、
（９）は磁力供給端子、（10）は電磁石、（11）は磁化
方向切換電源ユニツトである。 なお図中同一符号は同一又は相当部を示す。1 is a sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a sectional view taken along the line AA in FIG. 1, and FIG. 3 is a perspective view of the manufacturing method shown in FIG. FIG. 4 is a sectional view showing an embodiment of a conventional method for manufacturing a semiconductor device,
FIG. 5 is a sectional view showing another embodiment of the conventional method for manufacturing a semiconductor device. In the figure, (1) is a semiconductor chip, (1a) is a surface electrode,
(2) is a metal frame, (2a) is a die pad, (2b) is an external lead, (3) is a conductive adhesive, (4) is a fine metal wire, (5) is a heat block, (8) is a permanent magnet,
(9) is a magnetic force supply terminal, (10) is an electromagnet, and (11) is a magnetization direction switching power supply unit. The same reference numerals in the drawings indicate the same or corresponding parts.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】金属フレーム上に搭載された半導体チツプ
の表面電極と、外部リードとを金属細線を用いて接続す
るワイヤボンド工程において、台座となるヒートブロツ
クにＮ極（又はＳ極）の永久磁石を埋め込み、金属フレ
ームを電磁石でＳ極（又はＮ極）に磁化させることによ
り、ヒートブロツクと金属フレームとを磁力により密着
させることを特徴とする半導体装置の製造方法。1. In a wire bonding process for connecting a surface electrode of a semiconductor chip mounted on a metal frame and an external lead by using a fine metal wire, a heat block serving as a pedestal has an N-pole (or S-pole) permanent wire. A method of manufacturing a semiconductor device, wherein a magnet is embedded and a metal frame is magnetized to an S pole (or N pole) with an electromagnet so that the heat block and the metal frame are magnetically adhered to each other.
JP63006111A 1988-01-13 1988-01-13 Method for manufacturing semiconductor device Expired - Lifetime JP2526961B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63006111A JP2526961B2 (en) 1988-01-13 1988-01-13 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63006111A JP2526961B2 (en) 1988-01-13 1988-01-13 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPH01184839A JPH01184839A (en) 1989-07-24
JP2526961B2 true JP2526961B2 (en) 1996-08-21

Family

ID=11629392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63006111A Expired - Lifetime JP2526961B2 (en) 1988-01-13 1988-01-13 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2526961B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5228940A (en) * 1990-10-03 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Fine pattern forming apparatus
US5246532A (en) * 1990-10-26 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus
JP2501948B2 (en) * 1990-10-26 1996-05-29 三菱電機株式会社 Plasma processing method and plasma processing apparatus

Also Published As

Publication number Publication date
JPH01184839A (en) 1989-07-24

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