JP2522042Y2 - Plasma CVD equipment - Google Patents

Description

[Detailed description of the invention]

[0001]

The present invention relates to a plasma CVD apparatus.
Related.

[0002]

2. Description of the Related Art A conventional technique will be described below with reference to the drawings. FIG. 2 is an explanatory cross-sectional view of a conventional plasma CVD apparatus. In a substantially cylindrical vacuum vessel 10 in which the upper and lower parts are sealed, a cylindrical anode 20 and an annular outer and inner circumference are provided. Both circular and horizontally arranged tables 60
A plurality of (six pieces are shown) sample tables 61 rotatably attached to a table 60 by a shaft 62, and a gas supply pipe 40 disposed vertically in a central opening 65 of the table 60. It has.

A sample table 61 is arranged in an annular shape in the circumferential direction of the table 60. On each sample table 61, a plurality of samples 1 for forming a film, for example, a steel material are placed. (FIG. 2 shows the sample 1 placed on only one sample table 61). It should be noted that a number of gas ejection ports 41 are provided on the side of the gas supply pipe 40. Also, an appropriate number of tables 60 are arranged in the vertical direction (from the near side to the depth direction in FIG. 2). Each table 60 is electrically connected to a cathode (not shown) provided in the vacuum vessel 10, and the anode 20
The cathode is connected to a pair of output terminals of a DC power supply (not shown) provided outside the vacuum vessel 10.

The center of the anode 20, the center of the gas supply tube 40, and the center of the arrangement of the six sample tables 61 coincide with the center 601 of the table 60 so that the anode 20, the gas supply tube 40A and the sample table 61 are aligned. Are arranged.

In order to form a film of, for example, TiN on the sample 1, a TiCl ₄ gas and a N ₂ gas are supplied to a gas supply pipe 40 to be ejected from a gas ejection port 41 into the vacuum vessel 10 and an anode
A DC voltage is applied from the DC power source between the cathode 20 and the cathode to cause plasma discharge in the vacuum vessel 10.

At the same time, the table 60 is rotated, for example, in the direction of arrow A, and each sample table 61 is rotated, for example, in the direction of arrow B, by a device not shown. That is,
The sample 1 on each sample table 61 rotates and revolves (however, the individual samples 1 do not revolve, but the sample 1 for each sample table 61 integrally rotates about the shaft 62). After a predetermined time, the N ions and the Ti ions combine to form a TiN film on the surface of the sample 1.

[0007]

The present invention is, however, of the above-mentioned
Such a plasma CVD apparatus forms a film as described above.
Requires a device to rotate the sample to be formed
Therefore, the structure of the plasma CVD apparatus becomes complicated. Main idea
The plan was created in view of the above circumstances, and the sample was rotated on its own.
Plasma C, which does not need to be
It is intended to provide a VD device.

[0008]

A plasma according to claim 1
The CVD apparatus is provided in a vacuum container and in the vacuum container.
An anode, which is a cylindrical plasma discharge electrode, and this anode
Cathode, which is a plasma discharge electrode provided inside the
A ring-shaped table on which a sample to be deposited
Table and this table around the center axis of the table.
And a device for rotating the table, provided inside the table.
An almost cylindrical gas supply pipe and a gas supply pipe
A plurality of gas outlets, the anode, the table and the
And gas supply pipes are arranged with their central axes vertical.
Plasma CVD apparatus, wherein the gas supply
The central axis of the tube is away from the central axis of the table.

A plasma CVD apparatus according to a second aspect of the present invention
An empty container and a cylindrical plug provided in the vacuum container
An anode, which is an electrode for plasma discharge, and an electrode provided inside this anode
Film formed with the cathode, which is the electrode for plasma discharge
An annular table on which the sample to be mounted is placed
A device for rotating the table about a central axis thereof,
Almost cylindrical gas supply pipe provided inside the table
And a plurality of gas ejection ports provided in the gas supply pipe.
And the anode, table and gas supply pipe are each
Plasma CVD in which the central axes are vertically arranged
An apparatus, wherein a central axis of the anode is a central axis of a table.
Away from

[0010] The plasma CVD apparatus according to claim 3 is a contractor.
2. The plasma CVD apparatus according to claim 1, wherein
The central axis is away from the central axis of the table.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view of a longitudinal section of the present embodiment. Note that components equivalent to those described in FIG. 2 are denoted by the same reference numerals and described.

[0012] A plasma CVD apparatus according to an embodiment of the present invention.
Is a circle whose upper and lower parts are sealed as shown in FIG.
A cylindrical vacuum vessel 10 and a vacuum vessel 10 provided in the vacuum vessel 10.
The anode 20 serving as a plasma discharge electrode and the anode 2
The cathode, which is the electrode for plasma discharge provided inside 0
There are a plurality of samples 1 on which a film is to be formed
3 (in this embodiment, the case of three is shown.
Table 32, which can be any number).
I have. In the drawing, reference numeral 201 denotes a central axis of the anode 20;
Reference numeral 11 denotes an outlet of the vacuum vessel 10.

The three tables 32 are arranged horizontally and concentrically in parallel in the vertical direction.
It is fixed to an appropriate number of columns 33 arranged vertically. Reference numeral 301 denotes the center axis of the table 32. The lower end of the post 33 is a disc 31 horizontally arranged coaxially with the table 32.
It is fixed to.

On the lower surface of the disk 31, a rotary shaft 34 of the table 32 projects downward along the central axis 301 of the table 32. The rotary shaft 34 is provided below the vacuum vessel 10 to be insulated. Is drawn out below the vacuum vessel 10 through the flexible sleeve 12 in an airtight and rotatable manner. Further, a rotating device (not shown) for rotating the drawn-out rotating shaft 34 is provided. The disk 31, the table 32, the column 33, and the rotating shaft 34
Is made of metal.

A gas supply pipe 40 whose lower part is sealed is provided inside the table 32, and the upper part of the gas supply pipe 40 is attached to the upper end of the vacuum vessel 10. Further, on the side surface of the gas supply pipe 40, a number of gas ejection ports 41 are opened. Reference numeral 401 denotes a central axis of the gas supply pipe 40. Then, the respective central axes 201, 301 and 401 of the anode 20, the table 32 and the gas supply pipe 40 are all vertical,
The anode 20, the table 32, and the gas supply pipe 40 are arranged.

Reference numeral 50 denotes a DC power supply having a positive output terminal.
51 is connected to the anode 20 via an electric wire 53, and also has its negative output terminal
52 is connected to the rotating shaft 34 of the table 32 via an electric wire 54.

The plasma CVD apparatus according to the first embodiment of the present invention.
, The central axis 401 of the gas supply pipe 40 is
Gas supply pipe away from the center axis 301 of the
40 are provided. However, the stop axis 201 of the anode 20
Are aligned with the central axis 301 of the table 32. Or
With the plasma CVD apparatus according to the first embodiment,
On the surface of, for example, a steel sample 1 placed on the cable 32
To form a TiN film, the discharge port 1 of the vacuum vessel 10 is used.
The air inside the vacuum vessel 10 is sucked from 1 to
After evacuating, direct current power source 50 and anode 20 and table
32 while the DC voltage is applied to the rotating device.
Therefore, do not rotate the table 32 in the direction of the arrow P, for example.
Meanwhile, the TiCl ₄ gas and the N ₂ gas
And injected into the vacuum vessel 10 from the gas ejection port 41.
Let

Then, the anode 20 and the table 3 serving as the cathode are
And T ions generated by the plasma discharge between
TiN bonded with i-ion collides with sample 1 and sample 1
Is formed on the surface of the substrate. At this time, gas supply
The central axis 401 of the tube 40 is the central axis 301 of the table 32.
Eccentric, the sample 1 is a conventional plasma CVD
Even if the sample is not rotating as in the device, each sample 1
Moves toward or away from the gas outlet 41.
Therefore, the state in which each sample 1 encounters gas is just the conventional state.
Sample 1 is spinning like a plasma CVD device
Since TiN is almost the same, TiN is almost uniformly
As a result of the spraying, the thickness of the formed film becomes uniform.
You.

Plasma CVD according to a second embodiment of the present invention
In the apparatus, the center axis of the anode 20 which is an electrode for plasma discharge is used.
201 is away from the central axis 301 of the table 32
The anode 20 is arranged as described above. However, the gas supply pipe 40
Center axis 401 of table 32 coincides with center axis 301 of table 32.
Let me do it. Plasma CVD apparatus according to the second embodiment
Therefore, when a film of TiN is formed on the sample 1,
The central axis 201 of the anode 20 is the central axis 301 of the table 32.
Eccentric, the sample 1 is a conventional plasma CVD
Each sample 1 does not rotate, as in the device,
It approaches or moves away from the anode 20. Therefore, each
The state of collision of TiN on the surface of sample 1 is just
As in the case of a plasma CVD device, the sample 1 is rotating.
Since they are almost the same, the thickness of the film formed on each sample 1
Becomes uniform.

[0020] Plasma CVD according to a third embodiment of the present invention
In the apparatus, the center axis of the anode 20 which is an electrode for plasma discharge is used.
201 is away from the central axis 301 of the table 32
Thus, the anode 20 and the gas supply pipe 40 are provided.
The plasma CVD apparatus according to the third embodiment includes the first and second embodiments.
The advantages of both the plasma CVD apparatus of the second embodiment and
Even if sample 1 is not spinning,
The uniformity of the thickness of the film formed in No. 1 was extremely excellent
It has become something.

Thus, the first, second and third embodiments
In the plasma CVD apparatus, it is necessary to provide a rotation apparatus for the sample 1.
Since it is unnecessary, a plasma CVD apparatus with a simple structure
You.

According to the present invention, a vacuum container and a vacuum container
An anode which is a cylindrical plasma discharge electrode provided;
It is an electrode for plasma discharge provided inside this anode
The sample on which the film is to be formed is placed as the cathode.
An annular table and the center axis of the table
A device for rotation as a center, and
And a gas supply pipe having a substantially cylindrical shape.
A plurality of gas ejection ports provided in the anode,
Cables and gas supply pipes have their central axes
A plasma CVD apparatus arranged in a direction,
The central axis of the gas supply tube or the central axis of the anode or the anode
And the central axis of both the gas supply pipe and the table
The anode and the gas supply pipe are located away from
ing.

Therefore, the plasma CVD apparatus according to the present invention
Approach each sample to the gas supply tube and / or anode
The sample can be rotated
A film with a uniform thickness can be formed on a sample without any
Can be That is, only the sample rotation device is not provided.
Simplified structure, reduced manufacturing costs and breakdowns
There is an advantage that the maintenance cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a vertical view of a plasma CVD apparatus according to an embodiment of the present invention .
It is sectional explanatory drawing.

FIG. 2 is an explanatory cross-sectional view of a conventional plasma CVD apparatus.
You.

[Explanation of symbols]

 1 Sample 10 Vacuum container 20 Anode 32 Table 40 Gas supply pipe 41 Gas outlet 201, 301, 401 Central axis

Claims (3)

(57) [Scope of request for utility model registration] 1. A vacuum container, and a vacuum container provided in the vacuum container.
An anode, which is a cylindrical plasma discharge electrode, and this anode
Cathode, which is a plasma discharge electrode provided inside the
A ring-shaped table on which a sample to be deposited
Table and this table around the center axis of the table.
And a device for rotating the table, provided inside the table.
An almost cylindrical gas supply pipe and a gas supply pipe
A plurality of gas outlets, the anode, the table and the
And gas supply pipes are arranged with their central axes vertical.
In the plasma CVD apparatus, the center axis of the gas supply pipe is separated from the center axis of the table.
A plasma CVD apparatus characterized in that: 2. A vacuum container and a vacuum container provided in the vacuum container.
The anode, which is a cylindrical plasma discharge electrode, and this anode
The cathode, which is the plasma discharge electrode provided inside the pole
A ring on which the sample to be formed
Rotate the table and its center axis
And a substantially cylinder provided inside the table
Shape gas supply pipe and a plurality of gas supply pipes
The anode, the table and the gas
The supply pipes have their central axes arranged vertically.
In that the plasma CVD apparatus, the central axis of the anode, are separated from the central axis of the table
A plasma CVD apparatus characterized by the above-mentioned. 3. A central axis of the anode is a central axis of a table.
2. The plasm according to claim 1, further comprising:
Ma CVD equipment.