JP2504995B2 - Pattern defect repair device - Google Patents
Pattern defect repair deviceInfo
- Publication number
- JP2504995B2 JP2504995B2 JP15938687A JP15938687A JP2504995B2 JP 2504995 B2 JP2504995 B2 JP 2504995B2 JP 15938687 A JP15938687 A JP 15938687A JP 15938687 A JP15938687 A JP 15938687A JP 2504995 B2 JP2504995 B2 JP 2504995B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- pattern defect
- substrate
- irradiation
- repairing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は荷電ビームを利用してパターン欠陥を修正
するパターン欠陥修正装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a pattern defect repairing device that repairs a pattern defect by using a charged beam.
最近、半導体技術の発達はめざましく、ますます高精
度，高集積化している。半導体集積回路の製造に写真製
版工程は不可欠であり、通常、金属薄膜をガラス基板上
に被着させたフォトマスクを用いている。フォトマスク
の作成工程において金属薄膜パターンの欠陥の発生は不
可避であり、該欠陥の修正には、従来はレーザビームを
用いたパターン残存部の溶融蒸発方法を用いていた。し
かしこの方法ではレーザビームの熱によるガラス基板自
身のダメージが著しく、またそのため金属薄膜の溶融除
去部のエッジ部もシャープでなかった。また、パターン
欠損部に対しては欠損部にヌキのレジストパターンを形
成し、金属薄膜を形成してリフトオフプロセスを利用し
てパターン修正を行っていた。これらの方法においては
修正プロセスが複雑なため、工期を長期要したり、歩留
が悪いなどの問題点があった。Recently, the development of semiconductor technology has been remarkable, and the precision and integration have become higher and higher. A photoengraving process is indispensable for manufacturing a semiconductor integrated circuit, and usually a photomask in which a metal thin film is deposited on a glass substrate is used. Occurrence of defects in the metal thin film pattern is unavoidable in the photomask making process, and conventionally, a method of melting and evaporating the pattern remaining portion using a laser beam has been used to correct the defects. However, in this method, the glass substrate itself was significantly damaged by the heat of the laser beam, and therefore the edge of the melted and removed portion of the metal thin film was not sharp. In addition, for a pattern defective portion, a resist pattern having a blank is formed on the defective portion, a metal thin film is formed, and a pattern is corrected by using a lift-off process. Since the correction process is complicated in these methods, there are problems such as a long construction period and poor yield.
これらの問題点があったため、最近ではイオンビーム
を利用したパターン欠陥修正技術が確立されてきてお
り、パターン残存部、パターン欠陥部共にイオンビーム
を利用してパターン修正が可能となっている。Due to these problems, a pattern defect repair technique using an ion beam has recently been established, and it is possible to repair a pattern using an ion beam for both the pattern remaining portion and the pattern defect portion.
しかしながら、従来のイオンビームを用いるパターン
欠陥修正装置ではパターン修正時にGa+のような重イオ
ンを用いるためにガラス基板に与えるダメージが著し
く、またGaステインが発生するなどの問題点があった。However, in the conventional pattern defect repairing apparatus using an ion beam, heavy ions such as Ga + are used during pattern repairing, which causes serious damage to the glass substrate and causes Ga stains.
この発明は上記のような問題点を解消するためになさ
れたもので、荷電ビームによる基板のダメージを減少さ
せることのできるパターン欠陥修正装置を得ることを目
的とする。The present invention has been made to solve the above problems, and an object of the present invention is to obtain a pattern defect repairing apparatus capable of reducing damage to a substrate due to a charged beam.
この発明に係るパターン欠陥修正装置は、荷電ビーム
の照射中あるいは照射後に基板の温度を上昇させるため
の加熱手段を設けたものである。The pattern defect repairing apparatus according to the present invention is provided with heating means for raising the temperature of the substrate during or after irradiation of the charged beam.
この発明においては、荷電ビームの照射中あるいは照
射後に基板を加熱するようにしたので、荷電ビームによ
る基板のダメージを減少させることができ、パターンエ
ッジもシャープなものとできる。In the present invention, since the substrate is heated during or after the irradiation of the charged beam, damage to the substrate due to the charged beam can be reduced and the pattern edge can be sharpened.
以下、この発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例によるパターン欠陥修正
装置を示す側面模式図であり、図において、１はイオン
源であり、これは電界電解液体イオン源を用い、液体イ
オン源に電界をかけ、Ga+イオンを引き出しこれを照射
するものである。ここではGa+はニードル先端から約100
KVの加速電圧にて照射され、４×10-2c/cm2の照射量と
なるよう調節されている。２は偏向板、３は被加工物で
あるフォトマスク、４は移動ステージ、5,6及び７は加
熱手段を構成する加熱装置，温度センサ及び温度コント
ロール部であり、この加熱手段は、温度センサ６により
加熱装置５の温度が温度コントロール部７にフィードバ
ックされ安定した温度調節を行えるものである。８は集
束イオンビームである。また第２図は本実施例のフォト
マスク３を示す断面図であり、図において、９はCr薄膜
パターン、10はガラス基板、11はGa+注入領域である。FIG. 1 is a schematic side view showing a pattern defect repairing apparatus according to an embodiment of the present invention. In the figure, 1 is an ion source, which uses an electrolytic electrolytic liquid ion source and applies an electric field to the liquid ion source. , Ga + ions are extracted and irradiated. Here, Ga + is about 100 from the needle tip.
Irradiation was performed at an acceleration voltage of KV and the irradiation amount was adjusted to 4 × 10 -2 c / cm 2 . Reference numeral 2 is a deflection plate, 3 is a photomask which is a workpiece, 4 is a moving stage, 5, 6 and 7 are heating devices constituting a heating means, a temperature sensor and a temperature control section, and the heating means is a temperature sensor. The temperature of the heating device 5 is fed back to the temperature controller 7 by means of 6, and stable temperature adjustment can be performed. 8 is a focused ion beam. FIG. 2 is a sectional view showing the photomask 3 of this embodiment. In the figure, 9 is a Cr thin film pattern, 10 is a glass substrate, and 11 is a Ga + implantation region.
次に動作について説明する。 Next, the operation will be described.
イオンビーム８が偏向板２により偏向，集束され、フ
ォトマスク３のパターン残存部周辺に0.5μｍのスポッ
トにて照射されスキャンされ、イオンミリングによりCr
薄膜パターン９が除去されていき、この際にイオンビー
ム８がガラス基板10まで注入されてしまいGa注入領域11
が生じてしまうのは従来と同様である。このとき、通
常、イオンビームがガラス基板に照射されると、イオン
ビームがガラス組織の中に注入されてボイドが生成する
と同時にカラーセンターが発生し着色される。しかしな
がら、本実施例では、移動ステージ４の下部に加熱装置
５を設け、ガラス基板10を例えば300℃に加熱しながら
イオンビーム８を照射スキャンさせているので、カラー
センター等が熱エネルギーにより消失し組織が回復する
こととなる。従って、イオン注入によるガラス基板10の
ダメージを除去することができ、しかも、イオン照射部
のエッジを非常にシャープにでき、高画質のパターンを
精度よく得ることができる。The ion beam 8 is deflected and focused by the deflecting plate 2, is irradiated with a spot of 0.5 μm around the pattern remaining portion of the photomask 3 and is scanned.
The thin film pattern 9 is removed, and at this time, the ion beam 8 is injected to the glass substrate 10 and the Ga injection region 11
Is generated as in the conventional case. At this time, normally, when the glass substrate is irradiated with the ion beam, the ion beam is injected into the glass structure to generate a void and, at the same time, a color center is generated and colored. However, in this embodiment, the heating device 5 is provided below the moving stage 4 and the ion beam 8 is scanned while the glass substrate 10 is heated to, for example, 300 ° C. Therefore, the color center and the like disappear due to thermal energy. The organization will recover. Therefore, the damage to the glass substrate 10 due to the ion implantation can be removed, the edge of the ion irradiation portion can be made extremely sharp, and a high-quality pattern can be obtained accurately.
なお、上記実施例では、イオンビーム照射中に加熱処
理を実施する場合について述べたが、これはイオンビー
ム照射後でもよく同様の効果を奏する。またイオンビー
ム照射中にフォトマスク全体を加熱する場合について述
べたが、これは局所的な加熱でもよく、同様の効果を奏
する。また、加熱手段として、レーザビームを基板に照
射する手段を用いてもよく、これによれば、精度良く局
所的な加熱を行うことができる。また、上記実施例では
Ga+イオンの場合について述べたが、本発明は基板にダ
メージを与えるその他のイオンの場合にも適用でき、同
様の効果を奏する。また上記実施例では被加工物としフ
ォトマスクを用いた場合について述べたが、荷電ビーム
によりダメージが生ずる基板を有するものであれば本発
明を適用することができるのはもちろんである。In addition, in the said Example, although the case where a heat processing was implemented during ion beam irradiation was described, this may show the same effect after ion beam irradiation. Further, the case where the entire photomask is heated during the irradiation of the ion beam has been described, but this may be local heating and the same effect can be obtained. Further, a means for irradiating the substrate with a laser beam may be used as the heating means, and according to this, local heating can be performed with high accuracy. In the above embodiment,
Although the case of Ga + ions has been described, the present invention can be applied to the case of other ions that damage the substrate and has the same effect. Further, in the above-mentioned embodiment, the case where the photomask is used as the work piece is described, but it is needless to say that the present invention can be applied as long as it has a substrate which is damaged by the charged beam.
以上のようにこの発明のパターン欠陥修正装置によれ
ば、荷電ビームの照射中あるいは照射後に基板を加熱す
るようにしたので、荷電ビームによる基板のダメージを
減少させることができる効果がある。As described above, according to the pattern defect repairing apparatus of the present invention, since the substrate is heated during or after the irradiation of the charged beam, there is an effect that the damage of the substrate due to the charged beam can be reduced.
第１図はこの発明の一実施例によるパターン欠陥修正装
置を示す模式側面図、第２図は本実施例の被加工物であ
るフォトマスクを示す模式断面図である。 図において、１はイオン源、２は偏向板、３はフォトマ
スク、４は移動ステージ、５は加熱装置、６は温度セン
サ、７は温度コントロール部、８は集束イオンビーム、
９はCr薄膜パターン、10はガラス基板、11はGa+注入領
域である。FIG. 1 is a schematic side view showing a pattern defect repairing apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view showing a photomask which is a workpiece of this embodiment. In the figure, 1 is an ion source, 2 is a deflection plate, 3 is a photomask, 4 is a moving stage, 5 is a heating device, 6 is a temperature sensor, 7 is a temperature control unit, 8 is a focused ion beam,
9 is a Cr thin film pattern, 10 is a glass substrate, and 11 is a Ga + implantation region.
Claims (5)
パターン残存欠陥部に荷電ビームを照射して該残存欠陥
部を除去するパターン欠陥修正装置において、 荷電ビーム照射中あるいは照射後に上記基板を加熱する
ための加熱手段を設けたことを特徴とするパターン欠陥
修正装置。1. A pattern defect repairing apparatus for irradiating a pattern residual defect portion of a workpiece having a pattern formed on a substrate with a charge beam to remove the residual defect portion, wherein the substrate is irradiated during or after the irradiation of the charged beam. A pattern defect repairing device comprising a heating means for heating the pattern defect.
射部のみを加熱するものであることを特徴とする特許請
求の範囲第１項記載のパターン欠陥修正装置。2. The pattern defect repairing apparatus according to claim 1, wherein the heating means heats only the charged beam irradiation portion of the substrate.
上記基板の所望部分に照射するレーザビーム照射手段で
あることを特徴とする特許請求の範囲第１項又は第２項
記載のパターン欠陥修正装置。3. The pattern defect according to claim 1 or 2, wherein the heating means is a laser beam irradiation means for irradiating a desired portion of the substrate with a heating laser beam. Correction device.
ことを特徴とする特許請求の範囲第１項記載のパターン
欠陥修正装置。4. The pattern defect repairing apparatus according to claim 1, wherein the charged beam is a focused ion beam.
パターンを設けてなるフォトマスクであることを特徴と
する特許請求の範囲第１項記載のパターン欠陥修正装
置。5. The pattern defect repairing apparatus according to claim 1, wherein the workpiece is a photomask having a metal thin film pattern provided on a glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15938687A JP2504995B2 (en) | 1987-06-25 | 1987-06-25 | Pattern defect repair device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15938687A JP2504995B2 (en) | 1987-06-25 | 1987-06-25 | Pattern defect repair device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS643661A JPS643661A (en) | 1989-01-09 |
| JP2504995B2 true JP2504995B2 (en) | 1996-06-05 |
Family
ID=15692658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15938687A Expired - Fee Related JP2504995B2 (en) | 1987-06-25 | 1987-06-25 | Pattern defect repair device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2504995B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2809901B2 (en) * | 1991-08-26 | 1998-10-15 | 三菱電機株式会社 | Photomask substrate manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53135629A (en) * | 1977-04-30 | 1978-11-27 | Fujitsu Ltd | Correcting device for emulsion photo-mask |
| JPS5787128A (en) * | 1980-11-19 | 1982-05-31 | Toshiba Corp | Correcting method of mask |
| JPS586127A (en) * | 1981-07-03 | 1983-01-13 | Hitachi Ltd | Method and apparatus for correcting defect of photo-mask |
| JPS60245227A (en) * | 1984-05-21 | 1985-12-05 | Seiko Instr & Electronics Ltd | Pattern film forming method |
| JPS61123841A (en) * | 1984-11-20 | 1986-06-11 | Seiko Instr & Electronics Ltd | Ion beam mask reparing device |
-
1987
- 1987-06-25 JP JP15938687A patent/JP2504995B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS643661A (en) | 1989-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |