JP2025509409A - ペロブスカイトの連続成膜 - Google Patents

ペロブスカイトの連続成膜 Download PDF

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Publication number
JP2025509409A
JP2025509409A JP2024553786A JP2024553786A JP2025509409A JP 2025509409 A JP2025509409 A JP 2025509409A JP 2024553786 A JP2024553786 A JP 2024553786A JP 2024553786 A JP2024553786 A JP 2024553786A JP 2025509409 A JP2025509409 A JP 2025509409A
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Japan
Prior art keywords
perovskite
halide
precursor
deposition
metal
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JP2024553786A
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Japanese (ja)
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JP2025509409A5 (https=
Inventor
ベインズ，トム
ボーモント，ニコラ
ベスト，ジェームス
ミランダ ペレス，ローラ
ケース，クリストファー
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オックスフォード フォトボルテイクス リミテッド
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Publication of JP2025509409A publication Critical patent/JP2025509409A/ja
Publication of JP2025509409A5 publication Critical patent/JP2025509409A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2024553786A 2022-03-11 2023-03-10 ペロブスカイトの連続成膜 Pending JP2025509409A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB2203452.4A GB202203452D0 (en) 2022-03-11 2022-03-11 Sequential deposition of perovskites
GB2203452.4 2022-03-11
PCT/GB2023/050577 WO2023170429A1 (en) 2022-03-11 2023-03-10 Sequential deposition of perovskites

Publications (2)

Publication Number Publication Date
JP2025509409A true JP2025509409A (ja) 2025-04-11
JP2025509409A5 JP2025509409A5 (https=) 2026-02-03

Family

ID=81254924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024553786A Pending JP2025509409A (ja) 2022-03-11 2023-03-10 ペロブスカイトの連続成膜

Country Status (8)

Country Link
US (1) US20250268091A1 (https=)
EP (1) EP4490336A1 (https=)
JP (1) JP2025509409A (https=)
KR (1) KR20240160196A (https=)
CN (1) CN118829745A (https=)
AU (1) AU2023232990A1 (https=)
GB (1) GB202203452D0 (https=)
WO (1) WO2023170429A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118910735A (zh) * 2024-07-17 2024-11-08 安徽工程大学 一种无铅双钙钛矿单晶发光材料及其制备方法和应用
CN118890941A (zh) * 2024-09-25 2024-11-01 深圳黑晶光电技术有限公司 一种钙钛矿层制备方法、叠层太阳能电池及制备方法
KR102925103B1 (ko) * 2025-11-05 2026-02-06 충남대학교산학협력단 무기 페로브스카이트 박막의 제조 방법, 이의 제조 방법으로 제조된 무기 페로브스카이트 박막 및 이를 포함하는 페로브스카이트 태양전지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
AU2013319979B2 (en) 2012-09-18 2016-08-25 Oxford Photovoltaics Limited Optoelectronic device
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
GB201420488D0 (en) 2014-11-18 2014-12-31 Oxford Photovoltaics Ltd Photovoltaic device
TR201904847T4 (tr) 2015-06-12 2019-05-21 Oxford Photovoltaics Ltd Fotovoltai̇k ci̇haz
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
WO2018026326A1 (en) 2016-08-03 2018-02-08 Nanyang Technological University Halide perovskite film, solar cell including, and method of forming the same
GB2577492B (en) 2018-09-24 2021-02-10 Oxford Photovoltaics Ltd Method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite
US10930494B2 (en) 2019-04-09 2021-02-23 Swift Solar Inc. Vapor phase transport system and method for depositing perovskite semiconductors

Also Published As

Publication number Publication date
KR20240160196A (ko) 2024-11-08
CN118829745A (zh) 2024-10-22
WO2023170429A1 (en) 2023-09-14
AU2023232990A1 (en) 2024-09-05
EP4490336A1 (en) 2025-01-15
US20250268091A1 (en) 2025-08-21
GB202203452D0 (en) 2022-04-27

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