CN118829745A - 钙钛矿的顺序沉积 - Google Patents

钙钛矿的顺序沉积 Download PDF

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Publication number
CN118829745A
CN118829745A CN202380025422.1A CN202380025422A CN118829745A CN 118829745 A CN118829745 A CN 118829745A CN 202380025422 A CN202380025422 A CN 202380025422A CN 118829745 A CN118829745 A CN 118829745A
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CN
China
Prior art keywords
perovskite
halide
deposition
precursor
metal
Prior art date
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Pending
Application number
CN202380025422.1A
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English (en)
Chinese (zh)
Inventor
T·贝恩斯
N·博蒙特
J·贝斯特
L·M·佩雷斯
C·凯斯
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Oxford Photovoltaics Ltd
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Oxford Photovoltaics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Photovoltaics Ltd filed Critical Oxford Photovoltaics Ltd
Publication of CN118829745A publication Critical patent/CN118829745A/zh
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694Halides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • H10K30/57Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
CN202380025422.1A 2022-03-11 2023-03-10 钙钛矿的顺序沉积 Pending CN118829745A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB2203452.4A GB202203452D0 (en) 2022-03-11 2022-03-11 Sequential deposition of perovskites
GB2203452.4 2022-03-11
PCT/GB2023/050577 WO2023170429A1 (en) 2022-03-11 2023-03-10 Sequential deposition of perovskites

Publications (1)

Publication Number Publication Date
CN118829745A true CN118829745A (zh) 2024-10-22

Family

ID=81254924

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380025422.1A Pending CN118829745A (zh) 2022-03-11 2023-03-10 钙钛矿的顺序沉积

Country Status (8)

Country Link
US (1) US20250268091A1 (https=)
EP (1) EP4490336A1 (https=)
JP (1) JP2025509409A (https=)
KR (1) KR20240160196A (https=)
CN (1) CN118829745A (https=)
AU (1) AU2023232990A1 (https=)
GB (1) GB202203452D0 (https=)
WO (1) WO2023170429A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118910735A (zh) * 2024-07-17 2024-11-08 安徽工程大学 一种无铅双钙钛矿单晶发光材料及其制备方法和应用
CN118890941A (zh) * 2024-09-25 2024-11-01 深圳黑晶光电技术有限公司 一种钙钛矿层制备方法、叠层太阳能电池及制备方法
KR102925103B1 (ko) * 2025-11-05 2026-02-06 충남대학교산학협력단 무기 페로브스카이트 박막의 제조 방법, 이의 제조 방법으로 제조된 무기 페로브스카이트 박막 및 이를 포함하는 페로브스카이트 태양전지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
AU2013319979B2 (en) 2012-09-18 2016-08-25 Oxford Photovoltaics Limited Optoelectronic device
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
GB201420488D0 (en) 2014-11-18 2014-12-31 Oxford Photovoltaics Ltd Photovoltaic device
TR201904847T4 (tr) 2015-06-12 2019-05-21 Oxford Photovoltaics Ltd Fotovoltai̇k ci̇haz
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
WO2018026326A1 (en) 2016-08-03 2018-02-08 Nanyang Technological University Halide perovskite film, solar cell including, and method of forming the same
GB2577492B (en) 2018-09-24 2021-02-10 Oxford Photovoltaics Ltd Method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite
US10930494B2 (en) 2019-04-09 2021-02-23 Swift Solar Inc. Vapor phase transport system and method for depositing perovskite semiconductors

Also Published As

Publication number Publication date
KR20240160196A (ko) 2024-11-08
JP2025509409A (ja) 2025-04-11
WO2023170429A1 (en) 2023-09-14
AU2023232990A1 (en) 2024-09-05
EP4490336A1 (en) 2025-01-15
US20250268091A1 (en) 2025-08-21
GB202203452D0 (en) 2022-04-27

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