JP2024529801A - Light-emitting substrate, its manufacturing method, and display device - Google Patents

Light-emitting substrate, its manufacturing method, and display device Download PDF

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JP2024529801A
JP2024529801A JP2022546048A JP2022546048A JP2024529801A JP 2024529801 A JP2024529801 A JP 2024529801A JP 2022546048 A JP2022546048 A JP 2022546048A JP 2022546048 A JP2022546048 A JP 2022546048A JP 2024529801 A JP2024529801 A JP 2024529801A
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Prior art keywords
bonding
light
substrate
emitting substrate
led chip
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JP2022546048A
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Japanese (ja)
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培海 韋
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深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司
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Priority claimed from CN202210751104.0A external-priority patent/CN115117225A/en
Application filed by 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 filed Critical 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司
Publication of JP2024529801A publication Critical patent/JP2024529801A/en
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Abstract

本発明は、発光基板、その製造方法及び表示装置を開示する。発光基板は、ボンディング電極を含む駆動回路層と、接続電極がボンディング電極に接続されるＬＥＤチップと、ＬＥＤチップの駆動回路層から遠い側に設けられ、ＬＥＤチップ及び駆動回路層を被覆する封止層と、封止層のＬＥＤチップから遠い側に設けられ、封止層から遠い側の表面が発光基板の発光面であるカバープレートと、を含む。【選択図】図１The present invention discloses a light-emitting substrate, a manufacturing method thereof, and a display device. The light-emitting substrate includes a drive circuit layer including a bonding electrode, an LED chip having a connection electrode connected to the bonding electrode, a sealing layer provided on the side of the LED chip remote from the drive circuit layer and covering the LED chip and the drive circuit layer, and a cover plate provided on the sealing layer remote from the LED chip, the surface of the sealing layer remote from the LED chip being the light-emitting surface of the light-emitting substrate. [Selected Figure] Figure 1

Description

本発明は、表示の技術分野に関し、具体的には発光基板、その製造方法及び表示装置に関する。 The present invention relates to the technical field of displays, and more specifically to a light-emitting substrate, its manufacturing method, and a display device.

Ｍｉｃｒｏ－ＬＥＤ（Ｍｉｃｒｏ Ｌｉｇｈｔ－Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ，マイクロ発光ダイオード）及びＭｉｎｉ－ＬＥＤ（Ｍｉｎｉ Ｌｉｇｈｔ－Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ，ミニ発光ダイオード）は、近年市場で盛んに開発された新規表示技術である。このような表示技術は、寿命が長く、画面遅延が低く、色域が広く、リフレッシュレートが高いなどの比べものにならないほど多くの優位性を持っており、コストの低下及び関連技術の成熟に伴い、ＭＬＥＤ（Ｍｉｎｉ－ＬＥＤ／Ｍｉｃｒｏ－ＬＥＤ）表示装置は次第に市場の主流となっている。従来のＭＬＥＤ構造を形成する方法は、まず駆動回路及びボンディング電極をガラス基板上に形成し、次にＬＥＤチップを直接ガラス基板上に移載してボンディングし、最後に封止粘着剤を塗布すればよい。この構造は簡単であるが、表示面が封止粘着剤及び駆動回路側に位置するため、表示装置の表面の耐傷性が弱い。 Micro-LED (Micro Light-Emitting Diode) and Mini-LED (Mini Light-Emitting Diode) are new display technologies that have been actively developed in the market in recent years. Such display technologies have many incomparable advantages, such as a long lifespan, low screen delay, wide color gamut, and high refresh rate. With the reduction in cost and the maturity of related technologies, MLED (Mini-LED/Micro-LED) display devices are gradually becoming the mainstream in the market. The conventional method of forming an MLED structure is to first form a driving circuit and bonding electrodes on a glass substrate, then transfer and bond the LED chip directly onto the glass substrate, and finally apply a sealing adhesive. Although this structure is simple, the display surface is located on the sealing adhesive and driving circuit side, so the scratch resistance of the display surface is poor.

本発明は、従来技術におけるＭＬＥＤ表示装置の表面の耐傷性が弱いという技術的課題を解決するように、発光基板、その製造方法及び表示装置を提供する。 The present invention provides a light-emitting substrate, a manufacturing method thereof, and a display device to solve the technical problem of poor scratch resistance on the surface of MLED display devices in the prior art.

本発明は、
ボンディング電極を含む駆動回路層と、
前記ボンディング電極に接続される接続電極を含むＬＥＤチップと、
前記ＬＥＤチップの前記駆動回路層から遠い側に設けられ、前記ＬＥＤチップ及び前記駆動回路層を被覆する封止層と、
前記封止層の前記ＬＥＤチップから遠い側に設けられ、前記封止層から遠い側の表面が前記発光基板の発光面であるカバープレートと、を含む発光基板を提供する。 The present invention relates to
a drive circuit layer including a bonding electrode;
an LED chip including a connection electrode connected to the bonding electrode;
a sealing layer provided on a side of the LED chip farther from the drive circuit layer and covering the LED chip and the drive circuit layer;
a cover plate provided on a side of the encapsulation layer remote from the LED chip, the surface of the cover plate remote from the encapsulation layer being a light emitting surface of the light emitting substrate.

所望により、本発明のいくつかの実施例において、前記発光基板は、前記駆動回路層の前記ＬＥＤチップから遠い側に設けられる基板をさらに含む。 Optionally, in some embodiments of the present invention, the light-emitting substrate further includes a substrate provided on a side of the driving circuit layer away from the LED chip.

所望により、本発明のいくつかの実施例において、前記駆動回路層がボンディングパッドをさらに含み、前記基板がフレキシブル基板であり、前記基板上には、前記ボンディングパッドと対応して設けられるとともに、各前記ボンディングパッドの前記カバープレートから遠い側の表面を露出させるビアホールが設けられ、
前記発光基板は、前記ビアホールを介して対応する前記ボンディングパッドに接続されるボンディングピンを含む少なくとも１つの駆動チップをさらに含む。 Optionally, in some embodiments of the present invention, the driving circuit layer further includes bonding pads, the substrate is a flexible substrate, and via holes are provided on the substrate, corresponding to the bonding pads, and exposing the surfaces of the bonding pads on the side away from the cover plate;
The light emitting substrate further includes at least one driver chip including bonding pins connected to the corresponding bonding pads through the via holes.

所望により、本発明のいくつかの実施例において、前記ビアホールの孔径が対応する前記ボンディングピンの径方向寸法よりも大きく、前記ボンディングピンの少なくとも一部が対応する前記ビアホール内に位置する。 Optionally, in some embodiments of the present invention, the via hole has a diameter larger than a radial dimension of the corresponding bonding pin, and at least a portion of the bonding pin is located within the corresponding via hole.

所望により、本発明のいくつかの実施例において、前記ボンディングピンは、前記ビアホールと係合固定される。 Optionally, in some embodiments of the present invention, the bonding pin is engaged and fixed with the via hole.

所望により、本発明のいくつかの実施例において、前記駆動回路層がボンディングパッドをさらに含み、前記発光基板は、前記駆動回路層の前記ＬＥＤチップから遠い側に設けられる少なくとも１つの駆動チップをさらに含み、前記駆動チップが対応する前記ボンディングパッドに接続されるボンディングピンを含む。 Optionally, in some embodiments of the present invention, the driving circuit layer further includes bonding pads, and the light emitting substrate further includes at least one driving chip disposed on a side of the driving circuit layer remote from the LED chip, the driving chip including a bonding pin connected to a corresponding one of the bonding pads.

所望により、本発明のいくつかの実施例において、前記ボンディングピンは対応する前記ボンディングパッドと接触接続され、前記ボンディングピンと対応する前記ボンディングパッドとの間に金属結合が形成されている。 Optionally, in some embodiments of the present invention, the bonding pins are in contact with the corresponding bonding pads such that a metal bond is formed between the bonding pins and the corresponding bonding pads.

所望により、本発明のいくつかの実施例において、前記発光基板は、前記ボンディングパッドと前記駆動チップとの間に設けられる導電性ペースト層をさらに含み、前記ボンディングピンと対応する前記ボンディングパッドとの間が前記導電性ペースト層を介して接続される。 Optionally, in some embodiments of the present invention, the light-emitting substrate further includes a conductive paste layer provided between the bonding pads and the driving chip, and the bonding pins and the corresponding bonding pads are connected via the conductive paste layer.

所望により、本発明のいくつかの実施例において、前記発光基板は、表示パネル又はバックライトパネルである。 Optionally, in some embodiments of the present invention, the light-emitting substrate is a display panel or a backlight panel.

したがって、本発明は、少なくとも２つの上記のいずれかに記載の発光基板から接合形成される表示装置をさらに提供する。 Therefore, the present invention further provides a display device formed by bonding at least two of the light-emitting substrates described above.

したがって、本発明は、
硬質基板を提供するステップと、
前記硬質基板上には、基板と、ボンディング電極及びボンディングパッドを含む駆動回路層とを順次形成するステップと、
ＬＥＤチップを提供し、前記ＬＥＤチップの接続電極を前記ボンディング電極に対応してボンディング接続するステップと、
前記ＬＥＤチップの前記硬質基板から遠い側に封止層及びカバープレートを順次形成するステップと、
前記硬質基板を剥離するステップと、を含む発光基板の製造方法をさらに提供する。 Thus, the present invention provides
Providing a rigid substrate;
Sequentially forming a substrate and a driving circuit layer including a bonding electrode and a bonding pad on the hard substrate;
providing an LED chip, and bonding-connecting connection electrodes of the LED chip to the bonding electrodes;
sequentially forming an encapsulation layer and a cover plate on a side of the LED chip away from the rigid substrate;
and peeling off the hard substrate.

所望により、本発明のいくつかの実施例において、
前記ボンディングパッドの前記カバープレートから遠い側の表面を露出させるように、前記基板を全面エッチング又は穿孔エッチングするステップと、
駆動チップを提供するとともに、前記駆動チップを前記ボンディングパッドにボンディング接続するステップと、をさらに含む。 Optionally, in some embodiments of the present invention,
blanket or hole etch the substrate to expose surfaces of the bonding pads remote from the cover plate;
The method further includes providing a driver chip and bonding the driver chip to the bonding pad.

本発明は、発光基板、その製造方法及び表示装置を提供する。前記発光基板において、前記駆動回路層は複数のボンディング電極を含む。各前記ＬＥＤチップは、対応する前記ボンディング電極にそれぞれ接続される接続電極を２つ含む。前記封止層は、前記ＬＥＤチップの前記駆動回路層から遠い側に設けられ、前記ＬＥＤチップ及び前記駆動回路層を被覆する。前記カバープレートは、前記封止層の前記ＬＥＤチップから遠い側に設けられ、前記封止層から遠い側の表面が前記発光基板の発光面である。本発明は、発光基板にＬＥＤチップを反転ボンディングすることにより、発光基板の表面の耐傷性を向上させ、発光基板の水や酸素への耐食性を向上させ、製品の信頼性を向上させることができる。さらに、基板を剥離又はハーフエッチングすることにより、駆動チップを駆動回路層のカバープレートから遠い側にボンディングし、両面ボンディングの方式を採用して、狭額縁化又はフレームレス化（額縁レス化、ベゼルレス化）の目的を達成することができる。 The present invention provides a light-emitting substrate, a manufacturing method thereof, and a display device. In the light-emitting substrate, the driving circuit layer includes a plurality of bonding electrodes. Each of the LED chips includes two connection electrodes that are respectively connected to the corresponding bonding electrodes. The sealing layer is provided on the side of the LED chips far from the driving circuit layer, and covers the LED chips and the driving circuit layer. The cover plate is provided on the side of the sealing layer far from the LED chips, and the surface far from the sealing layer is the light-emitting surface of the light-emitting substrate. The present invention improves the scratch resistance of the surface of the light-emitting substrate by inverting bonding the LED chip to the light-emitting substrate, improves the corrosion resistance of the light-emitting substrate to water and oxygen, and improves the reliability of the product. Furthermore, by peeling or half-etching the substrate, the driving chip is bonded to the side of the driving circuit layer far from the cover plate, and a double-sided bonding method is adopted to achieve the purpose of narrowing the frame or making it frameless (frameless, bezelless).

本発明の実施例における技術的手段をより明確に説明するために、以下、実施例の説明で使用する必要がある図面を簡単に紹介し、以下の説明における図面は、本発明の幾つかの実施例に過ぎなく、当業者にとっては創造的努力なしにこれらの図面から他の図面を導き出すこともできることは明らかである。
図１は本発明に係る発光基板の第１の構造概略図である。 図２は本発明に係る発光基板の第２の構造概略図である。 図３は本発明に係る発光基板の発光面の平面構造概略図である。 図４は本発明に係る発光基板の裏面の平面構造概略図である。 図５は本発明に係る発光基板の第３の構造概略図である。 図６は本発明に係る発光基板の第４の構造概略図である。 図７は本発明に係る発光基板の第５の構造概略図である。 図８は本発明に係る表示装置の構造概略図である。 図９は本発明に係る発光基板の製造方法の第１のフローチャートである。 図１０Ａ～図１０Ｅは本発明に係る発光基板の製造方法におけるステップ１０１～ステップ１０５で得られた構造概略図である。 図１１は本発明に係る発光基板の製造方法の第２のフローチャートである。 図１２Ａ～図１２Ｄは本発明に係る発光基板の製造方法におけるステップ１０６～ステップ１０７で得られた構造概略図である。 In order to more clearly describe the technical means in the embodiments of the present invention, the following briefly introduces the drawings that need to be used in the description of the embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and those skilled in the art can also derive other drawings from these drawings without creative efforts.
FIG. 1 is a first structural schematic diagram of a light emitting substrate according to the present invention. FIG. 2 is a second structural schematic diagram of the light emitting substrate according to the present invention. FIG. 3 is a schematic plan view of the light emitting surface of the light emitting substrate according to the present invention. FIG. 4 is a schematic plan view of the rear surface of the light emitting substrate according to the present invention. FIG. 5 is a third structural schematic diagram of the light emitting substrate according to the present invention. FIG. 6 is a fourth structural schematic diagram of the light emitting substrate according to the present invention. FIG. 7 is a fifth structural schematic diagram of the light emitting substrate according to the present invention. FIG. 8 is a structural schematic diagram of a display device according to the present invention. FIG. 9 is a first flowchart of a method for manufacturing a light emitting substrate according to the present invention. 10A to 10E are schematic diagrams of structures obtained in steps 101 to 105 in the manufacturing method for a light emitting substrate according to the present invention. FIG. 11 is a second flowchart of the method for manufacturing a light emitting substrate according to the present invention. 12A to 12D are schematic diagrams of the structure obtained in step 106 to step 107 in the manufacturing method of the light emitting substrate according to the present invention.

以下、本発明の実施例における図面を参照しながら、本発明の実施例における技術的手段を明確かつ完全に説明するが、説明した実施例は本発明の実施例のすべてではなく、単に実施例の一部であることは明らかである。本発明における実施例に基づいて、当業者が創造的努力なしに取得したすべての他の実施例は、いずれも本発明の保護範囲に属している。 The technical means in the embodiments of the present invention will be described below clearly and completely with reference to the drawings in the embodiments of the present invention, but it is clear that the described embodiments are not all of the embodiments of the present invention, but are merely some of the embodiments. All other embodiments obtained by a person skilled in the art without creative efforts based on the embodiments of the present invention are all within the scope of protection of the present invention.

本発明の説明において、「第一」及び「第二」という用語は、単に説明するためのものであり、相対的な重要性を指示又は示唆するか、又は示される技術的特徴の数を暗示すると理解されるべきではない。したがって、「第一」及び「第二」によって限定されている特徴は、１つ又は複数の前記特徴を含むことを明示又は暗示することができるため、本発明を限定するものとして理解されるべきではない。 In describing the present invention, the terms "first" and "second" are merely for illustrative purposes and should not be understood to indicate or suggest the relative importance or number of technical features depicted. Thus, features qualified by "first" and "second" should not be understood as limiting the present invention, since they may expressly or imply the inclusion of one or more of said features.

本発明は、発光基板、その製造方法及び表示装置を提供し、以下、詳細に説明する。なお、以下の実施例の説明順序は、本発明の実施例の好ましい順序を限定するものではない。 The present invention provides a light-emitting substrate, a manufacturing method thereof, and a display device, which will be described in detail below. Note that the order in which the following examples are described does not limit the preferred order of the examples of the present invention.

図１に示すように、図１は本発明に係る発光基板の第１の構造概略図である。本発明の実施例において、発光基板１００は、ボンディング電極１１を含む駆動回路層１０と、ボンディング電極１１に接続される接続電極２１を含むＬＥＤチップ２０と、ＬＥＤチップ２０の駆動回路層１０から遠い側に設けられ、ＬＥＤチップ２０及び駆動回路層１０を被覆する封止層３０と、封止層３０のＬＥＤチップ２０から遠い側に設けられ、封止層３０から遠い側の表面４０ａが発光基板１００の発光面であるカバープレート４０と、を含む。 As shown in FIG. 1, FIG. 1 is a first structural schematic diagram of a light-emitting substrate according to the present invention. In an embodiment of the present invention, the light-emitting substrate 100 includes a driving circuit layer 10 including a bonding electrode 11, an LED chip 20 including a connection electrode 21 connected to the bonding electrode 11, a sealing layer 30 provided on the LED chip 20 on the side farther from the driving circuit layer 10 and covering the LED chip 20 and the driving circuit layer 10, and a cover plate 40 provided on the sealing layer 30 on the side farther from the LED chip 20, the surface 40a on the side farther from the sealing layer 30 being the light-emitting surface of the light-emitting substrate 100.

本発明の実施例は、ＬＥＤチップ２０を反転ボンディングする方法により、カバープレート４０の封止層３０から遠い側の表面４０ａを発光基板１００の発光面とする。カバープレート４０の硬度が高いため、発光基板１００の表面の耐傷性を向上させ、ＬＥＤチップ２０及び駆動回路層１０に外部から傷つけることを防止することができる。また、従来技術では、ボンディング電極１１及び接続電極２１が外側に設けられることで、封止層３０を露出させ、水や酸素からの腐食を受けやすい。本発明の実施例の発光基板１００において、ボンディング電極１１と接続電極２１とが発光基板１００の内側に設けられているので、発光基板１００の水や酸素への耐食性を向上させ、製品の信頼性を向上させることができる。 In the embodiment of the present invention, the surface 40a of the cover plate 40 far from the sealing layer 30 is used as the light emitting surface of the light emitting substrate 100 by a method of inverting bonding the LED chip 20. Since the cover plate 40 has a high hardness, the scratch resistance of the surface of the light emitting substrate 100 is improved, and the LED chip 20 and the driving circuit layer 10 can be prevented from being damaged from the outside. In the conventional technology, the bonding electrode 11 and the connection electrode 21 are provided on the outside, exposing the sealing layer 30 and making it susceptible to corrosion from water and oxygen. In the light emitting substrate 100 of the embodiment of the present invention, the bonding electrode 11 and the connection electrode 21 are provided on the inside of the light emitting substrate 100, improving the corrosion resistance of the light emitting substrate 100 to water and oxygen and improving the reliability of the product.

本発明の実施例において、駆動回路層１０は、駆動電圧及び電源電圧などの駆動信号をＬＥＤチップ２０に供給するためのものであり、基板上に設けられる薄膜トランジスタ機能層を含んでいてもよく、薄膜トランジスタ機能層の具体的な構成については従来技術を参照することができ、ここではその説明を省略する。 In an embodiment of the present invention, the drive circuit layer 10 is for supplying drive signals such as a drive voltage and a power supply voltage to the LED chip 20, and may include a thin-film transistor functional layer provided on a substrate. The specific configuration of the thin-film transistor functional layer can be found in the prior art, and a description thereof will be omitted here.

本発明の実施例において、ボンディング電極１１は、駆動回路層１０上の駆動信号を引き出すための信号出力端子であり、少なくとも２つ設けられていてもよく、具体的にはＬＥＤチップ２０の数によって決まり、銅、アルミニウム、マグネシウム、銀、スズ、酸化インジウムスズ等の導電率が良好で、比較的低い融点を有する導電材料からなり、アレイ状に配列されてもよい。ボンディング電極１１の数及び配列構造が、発光基板１００の解像度等の実際の要件に応じて設計することができ、本発明はこれに限定されるものではない。 In an embodiment of the present invention, the bonding electrodes 11 are signal output terminals for extracting driving signals on the driving circuit layer 10, and at least two may be provided, specifically determined by the number of LED chips 20, and may be made of a conductive material with good conductivity and a relatively low melting point, such as copper, aluminum, magnesium, silver, tin, indium tin oxide, etc., and may be arranged in an array. The number and arrangement structure of the bonding electrodes 11 can be designed according to actual requirements such as the resolution of the light emitting substrate 100, and the present invention is not limited thereto.

本発明の実施例において、ＬＥＤチップ２０は、少なくとも２つ設けられていてもよい。各ＬＥＤチップ２０に２つの接続電極２１が設けられている。駆動回路層１０において各ＬＥＤチップ２０に対応して間隔をおいて設けられるボンディング電極１１が設けられている。２つのボンディング電極１１は、それぞれ駆動回路層１０における異なる駆動信号を引き出すためのものである。各接続電極２１と対応するボンディング電極１１との間は、半田ペースト１３を介して接続されていてもよいし、溶融溶接、金属結合等の直接接触方法により接続されていてもよく、本発明はこれを特に限定するものではない。 In an embodiment of the present invention, at least two LED chips 20 may be provided. Two connection electrodes 21 are provided on each LED chip 20. Bonding electrodes 11 are provided at intervals in the drive circuit layer 10 corresponding to each LED chip 20. The two bonding electrodes 11 are for drawing out different drive signals in the drive circuit layer 10. Each connection electrode 21 and the corresponding bonding electrode 11 may be connected via solder paste 13, or may be connected by a direct contact method such as fusion welding or metal bonding, and the present invention is not particularly limited to this.

本発明の実施例において、ＬＥＤチップ２０は、Ｍｉｎｉ－ＬＥＤチップ、Ｍｉｃｒｏ－ＬＥＤチップ等であってもよい。ＬＥＤチップ２０の数が、発光基板１００のサイズ及び発光輝度等の要件に応じて設定することができる。ＬＥＤチップ２０は、発光材料層２３、保護層２２、発光材料層２３上に堆積される第１電極及び第２電極をさらに含む。各接続電極２１が第１電極又は第２電極に接続される。又はＬＥＤチップ２０において、一方の接続電極２１が第１電極であり、他方の接続電極２１が第２電極である。勿論、本発明におけるＬＥＤチップ２０の構成はこれに限定されるものではない。 In the embodiment of the present invention, the LED chip 20 may be a mini-LED chip, a micro-LED chip, etc. The number of LED chips 20 can be set according to requirements such as the size and luminous brightness of the light emitting substrate 100. The LED chip 20 further includes a light emitting material layer 23, a protective layer 22, a first electrode and a second electrode deposited on the light emitting material layer 23. Each connection electrode 21 is connected to the first electrode or the second electrode. Or, in the LED chip 20, one connection electrode 21 is the first electrode and the other connection electrode 21 is the second electrode. Of course, the configuration of the LED chip 20 in the present invention is not limited to this.

ＬＥＤチップ２０の発光材料が、窒化ガリウム等の無機発光材料又は量子ドット等の有機発光材料であってもよい。ＬＥＤチップ２０は、赤色光、青色光、緑色光、白色光又は黄色光等を発光することができる。ＬＥＤチップ２０を製造する際に、発光色のニーズに応じて異なる発光材料を選択することができる。 The light-emitting material of the LED chip 20 may be an inorganic light-emitting material such as gallium nitride or an organic light-emitting material such as quantum dots. The LED chip 20 can emit red light, blue light, green light, white light, yellow light, etc. When manufacturing the LED chip 20, different light-emitting materials can be selected according to the needs of the light-emitting color.

本発明の一実施例において、複数のＬＥＤチップ２０は、赤色ＬＥＤチップ、緑色ＬＥＤチップ及び青色ＬＥＤチップを含む。赤色ＬＥＤチップにおいて、発光材料層２３は、赤色発光材料層２０１である。緑色ＬＥＤチップにおいて、発光材料層２３は、緑色発光材料層２０２である。青色ＬＥＤチップにおいて、発光材料層２３は、青色発光材料層２０３である。 In one embodiment of the present invention, the plurality of LED chips 20 includes a red LED chip, a green LED chip, and a blue LED chip. In the red LED chip, the light emitting material layer 23 is a red light emitting material layer 201. In the green LED chip, the light emitting material layer 23 is a green light emitting material layer 202. In the blue LED chip, the light emitting material layer 23 is a blue light emitting material layer 203.

本発明の実施例において、封止層３０の材料が、通常、発光基板１００の光透過率を高めるように透明なものである。具体的には、封止層３０の材料がＯＣＡ（Ｏｐｔｉｃａｌｌｙ Ｃｌｅａｒ Ａｄｈｅｓｉｖｅ：光学用透明粘着シート）又は他の透明粘着剤であってもよい。本発明の実施例は透明粘着剤を用いて封止層３０を形成することにより、発光基板１００の光取り出し効率を向上させる一方で、駆動回路層１０とカバープレート４０との粘着性を高め、発光基板１００の構造安定性を高めることができる。さらに、封止層３０がＬＥＤチップ２０を被覆するので、ＬＥＤチップ２０を固定保護する役割を果たすことができる。 In the embodiment of the present invention, the material of the sealing layer 30 is usually transparent so as to increase the light transmittance of the light emitting substrate 100. Specifically, the material of the sealing layer 30 may be OCA (Optically Clear Adhesive) or other transparent adhesive. In the embodiment of the present invention, the sealing layer 30 is formed using a transparent adhesive, thereby improving the light extraction efficiency of the light emitting substrate 100, while increasing the adhesion between the driving circuit layer 10 and the cover plate 40, and improving the structural stability of the light emitting substrate 100. Furthermore, since the sealing layer 30 covers the LED chip 20, it can play a role in fixing and protecting the LED chip 20.

本発明の実施例において、カバープレート４０は、ガラスカバープレート又は他の硬質透明カバープレートであってもよく、発光基板１００における他の機能膜層を支持保護する役割を果たす。カバープレート４０の封止層３０から遠い側の表面４０ａが発光基板１００の発光面であるため、カバープレート４０を透明カバープレートとして設けることにより、発光基板１００の光取り出し効率を向上させることができる。 In an embodiment of the present invention, the cover plate 40 may be a glass cover plate or other hard transparent cover plate, and serves to support and protect other functional film layers in the light emitting substrate 100. Since the surface 40a of the cover plate 40 away from the sealing layer 30 is the light emitting surface of the light emitting substrate 100, providing the cover plate 40 as a transparent cover plate can improve the light extraction efficiency of the light emitting substrate 100.

本発明のいくつかの実施例において、発光基板１００は、駆動回路層１０のＬＥＤチップ２０から遠い側に設けられる基板５０をさらに含む。 In some embodiments of the present invention, the light emitting substrate 100 further includes a substrate 50 provided on the side of the driving circuit layer 10 away from the LED chip 20.

基板５０は、フレキシブル基板であってもよいし、硬質基板であってもよく、１層又は２層以上のフレキシブルＰＩ（Ｐｏｌｙｉｍｉｄｅ，ポリイミド）を含むことができ、樹脂等の材料で製造されていてもよい。 The substrate 50 may be a flexible substrate or a rigid substrate, may include one or more layers of flexible polyimide (PI), and may be made of a material such as resin.

本発明の実施例は、駆動回路層１０のＬＥＤチップ２０から遠い側に基板５０を設けることにより、駆動回路層１０を保護支持する役割を果たし、発光基板１００の構造安定性を向上させることができる。 In the embodiment of the present invention, by providing a substrate 50 on the side of the drive circuit layer 10 farther from the LED chip 20, it is possible to protect and support the drive circuit layer 10 and improve the structural stability of the light-emitting substrate 100.

本発明の実施例において、発光基板１００は、駆動信号又は電源電圧を駆動回路層１０に供給するための駆動チップをさらに含むことができる。駆動チップは、発光基板１００の額縁領域に設けられていてもよいし、発光基板１００の側辺に設けられていてもよいか、又は発光基板１００の裏面に設けられていてもよく、具体的な内容は以下の実施例で説明され、ここではその説明を省略する。 In an embodiment of the present invention, the light emitting substrate 100 may further include a driving chip for supplying a driving signal or a power supply voltage to the driving circuit layer 10. The driving chip may be provided in the frame region of the light emitting substrate 100, on the side of the light emitting substrate 100, or on the back surface of the light emitting substrate 100. The specific contents will be described in the following embodiment, and the description thereof will be omitted here.

図２に示すように、図２は本発明に係る発光基板の第２の構造概略図である。図１に記載の発光基板１００との相違点は、本発明の実施例において、駆動回路層１０はボンディングパッド１２をさらに含むことにある。基板５０はフレキシブル基板であり、基板５０上にビアホール５０ａが設けられている。ビアホール５０ａは、ボンディングパッド１２と対応して設けられて、各ボンディングパッド１２のカバープレート４０から遠い側の表面を露出させる。 As shown in FIG. 2, FIG. 2 is a second structural schematic diagram of the light emitting substrate according to the present invention. The difference from the light emitting substrate 100 shown in FIG. 1 is that in the embodiment of the present invention, the driving circuit layer 10 further includes a bonding pad 12. The substrate 50 is a flexible substrate, and a via hole 50a is provided on the substrate 50. The via hole 50a is provided corresponding to the bonding pad 12, and exposes the surface of each bonding pad 12 away from the cover plate 40.

発光基板１００は、ビアホール５０ａを介して対応するボンディングパッド１２に接続されるボンディングピン６１を含む少なくとも１つの駆動チップ６０をさらに含む。 The light-emitting substrate 100 further includes at least one driver chip 60 including a bonding pin 61 connected to a corresponding bonding pad 12 through a via hole 50a.

駆動チップ６０は、１つ設けられてもよいし、２つ以上設けられてもよい。駆動チップ６０の数が、具体的に発光基板１００のサイズによって設定することができる。ボンディングパッド１２が複数設けられてもよい。ボンディングピン６１の数がボンディングパッド１２の数と等しくてもよい。ボンディングパッド１２がボンディングピン６１と一対一で対応してボンディング接続される。 One or more driving chips 60 may be provided. The number of driving chips 60 can be set specifically according to the size of the light emitting substrate 100. A plurality of bonding pads 12 may be provided. The number of bonding pins 61 may be equal to the number of bonding pads 12. The bonding pads 12 correspond one-to-one to the bonding pins 61 and are bonded.

駆動チップ６０から出力される駆動電圧又は電源電圧を駆動回路層１０における駆動回路又は電源配線に出力するように、ボンディングパッド１２がボンディングピン６１にボンディング接続される。 The bonding pads 12 are bonded to the bonding pins 61 so that the drive voltage or power supply voltage output from the drive chip 60 is output to the drive circuit or power supply wiring in the drive circuit layer 10.

具体的には、図３及び図４を参照されたい。図３は本発明に係る発光基板の発光面の平面構造概略図である。図４は本発明に係る発光基板の裏面の平面構造概略図である。図３に示すように、発光基板１００は、表示領域ＤＡと、表示領域ＤＡに接続される非表示領域ＮＡとを含む。駆動チップ６０が表示領域ＤＡに設けられる。非表示領域ＮＡに主に信号を転送する複数の配線が設けられ、ここではその説明を省略する。勿論、いくつかの実施例において、発光基板１００は表示領域ＤＡのみを含むことで、フレームレス化を実現することができる。駆動チップ６０が発光基板１００の裏面にボンディングされる。駆動チップ６０が複数設けられてもよく、複数の駆動チップ６０が発光基板１００の裏面にアレイ状に配列されてもよい。勿論、駆動チップ６０の設定については、本発明はこれに限定されるものではなく、具体的に発光基板１００の実際の構成によって設定することができる。 For details, please refer to FIG. 3 and FIG. 4. FIG. 3 is a schematic diagram of the planar structure of the light-emitting surface of the light-emitting substrate according to the present invention. FIG. 4 is a schematic diagram of the planar structure of the back surface of the light-emitting substrate according to the present invention. As shown in FIG. 3, the light-emitting substrate 100 includes a display area DA and a non-display area NA connected to the display area DA. A driving chip 60 is provided in the display area DA. A plurality of wirings are provided in the non-display area NA, which mainly transfer signals, and the description thereof is omitted here. Of course, in some embodiments, the light-emitting substrate 100 includes only the display area DA, so that a frameless structure can be realized. The driving chip 60 is bonded to the back surface of the light-emitting substrate 100. A plurality of driving chips 60 may be provided, and a plurality of driving chips 60 may be arranged in an array on the back surface of the light-emitting substrate 100. Of course, the present invention is not limited to this in terms of the setting of the driving chip 60, and it can be specifically set according to the actual configuration of the light-emitting substrate 100.

本発明の実施例において、基板５０がフレキシブル基板であり、エッチング技術により基板５０を穿孔して、駆動チップ６０と駆動回路層１０とのボンディングを実現することができる。例えば、基板５０がＰＩフレキシブル基板である場合に、ＰＩ材料の特性に基づいて、基板５０を薬液によりエッチングすることができる。 In an embodiment of the present invention, the substrate 50 is a flexible substrate, and the substrate 50 can be perforated by etching technology to realize bonding between the driving chip 60 and the driving circuit layer 10. For example, when the substrate 50 is a PI flexible substrate, the substrate 50 can be etched by a chemical solution based on the properties of the PI material.

本発明の実施例は、ＬＥＤチップ２０を駆動回路層１０のカバープレート４０に近い側にボンディングし、駆動チップ６０を基板５０のカバープレート４０から遠い側にボンディングし、両面ボンディング及び基板５０のエッチング技術により、駆動チップ６０を発光基板１００の裏面に設けることができ、独立して側辺に駆動チップ６０をボンディングする空間を省くことで、狭額縁化又はフレームレス化の目的を達成する。また、従来技術における回路基板に駆動チップ６０を直接搭載する場合に比べて、技術的な難度が低い。 In the embodiment of the present invention, the LED chip 20 is bonded to the side of the driving circuit layer 10 closest to the cover plate 40, and the driving chip 60 is bonded to the side of the substrate 50 far from the cover plate 40. By using double-sided bonding and substrate 50 etching techniques, the driving chip 60 can be mounted on the back surface of the light emitting substrate 100, eliminating the space required for independently bonding the driving chip 60 to the side, thereby achieving the goal of a narrow frame or frameless structure. In addition, the technical difficulty is lower than that of the prior art, in which the driving chip 60 is directly mounted on the circuit substrate.

引続き図２を参照されたく、本発明の実施例において、ビアホール５０ａの孔径が対応するボンディングピン６１の径方向寸法よりも大きく、ボンディングピン６１の少なくとも一部が対応するビアホール５０ａ内に位置する。 Continuing to refer to FIG. 2, in an embodiment of the present invention, the diameter of the via hole 50a is larger than the radial dimension of the corresponding bonding pin 61, and at least a portion of the bonding pin 61 is located within the corresponding via hole 50a.

本発明の実施例は、ビアホール５０ａの孔径を対応するボンディングピン６１の径方向寸法よりも大きく設けることにより、駆動チップ６０をボンディングする際に、ボンディングピン６１をビアホール５０ａ内に深く挿入することで、発光基板１００の厚さを薄くし、駆動チップ６０のボンディング安定性を向上させることができる。 In an embodiment of the present invention, the hole diameter of the via hole 50a is set to be larger than the radial dimension of the corresponding bonding pin 61, and when bonding the driving chip 60, the bonding pin 61 is inserted deeply into the via hole 50a, thereby reducing the thickness of the light-emitting substrate 100 and improving the bonding stability of the driving chip 60.

本発明の実施例において、ビアホール５０ａの形状がボンディングピン６１の形状に一致することができる。例えば、ビアホール５０ａとボンディングピン６１の断面構造とがいずれも矩形などであってもよい。駆動チップ６０のボンディング安定性をさらに向上させるように、ボンディングピン６１がビアホール５０ａと係合固定されてもよい。 In an embodiment of the present invention, the shape of the via hole 50a may match the shape of the bonding pin 61. For example, the cross-sectional structures of the via hole 50a and the bonding pin 61 may both be rectangular. The bonding pin 61 may be engaged and fixed with the via hole 50a to further improve the bonding stability of the driver chip 60.

本発明の実施例において、ボンディングピン６１の深さがビアホール５０ａの深さよりも大きくなってもよい。この場合に、ボンディングピン６１が対応するボンディングパッド１２に接触接続されてもよい。ボンディングピン６１と対応するボンディングパッド１２との間に金属結合が形成される。 In an embodiment of the present invention, the depth of the bonding pin 61 may be greater than the depth of the via hole 50a. In this case, the bonding pin 61 may be contact-connected to the corresponding bonding pad 12. A metal bond is formed between the bonding pin 61 and the corresponding bonding pad 12.

金属結合は、金属中の原子を一緒に接続する化学結合である。これらは、金属結合における電子が非局在化しているものであり、つまり、２つの原子間のみで共有されているわけではないことから、共有結合及びイオン結合とは異なる。逆に、金属結合における電子が金属原子核の結晶格子中を自由に浮遊する。このタイプの結合は、優れた熱伝導性、導電性、高融点及び延性を含める多くの特有の材料特性を金属に付与する。金属結合によりボンディングピン６１と対応するボンディングパッド１２との間に優れた導電性を有する。 Metallic bonds are chemical bonds that connect atoms in metals together. They differ from covalent and ionic bonds because the electrons in metallic bonds are delocalized, that is, not shared solely between two atoms. Conversely, the electrons in metallic bonds float freely in the crystal lattice of the metal nuclei. This type of bond gives metals many unique material properties, including excellent thermal and electrical conductivity, high melting points, and ductility. Metallic bonds provide excellent electrical conductivity between the bonding pin 61 and the corresponding bonding pad 12.

図５に示すように、図５は本発明に係る発光基板の第３の構造概略図である。図２に示す発光基板１００との相違点は、本発明の実施例において、発光基板１００は、ボンディングパッド１２と駆動チップ６０との間に設けられる導電性ペースト層７０をさらに含むことにある。ボンディングピン６１と対応するボンディングパッド１２とが導電性ペースト層７０を介して接続される。 As shown in FIG. 5, FIG. 5 is a schematic diagram of a third structure of the light emitting substrate according to the present invention. The difference from the light emitting substrate 100 shown in FIG. 2 is that in the embodiment of the present invention, the light emitting substrate 100 further includes a conductive paste layer 70 provided between the bonding pad 12 and the driving chip 60. The bonding pin 61 and the corresponding bonding pad 12 are connected via the conductive paste layer 70.

導電性ペースト層７０の材料が異方性導電フィルム（Ａｎｉｓｏｔｒｏｐｉｃ Ｃｏｎｄｕｃｔｉｖｅ Ｆｉｌｍ，ＡＣＦ）であってもよい。異方性導電フィルム中の導電粒子を用いてボンディングピン６１と対応するボンディングパッド１２とを接続して導通させることにより、隣接するボンディングピン６１の間又は隣接するボンディングパッド１２の間の短絡を防止することができる。勿論、導電性ペースト層７０が他の導電性ペーストで製造されてもよい。各ボンディングピン６１と対応するボンディングパッド１２とに対して独立して導電性ペースト層７０を設けてもよい。 The material of the conductive paste layer 70 may be an anisotropic conductive film (ACF). By using conductive particles in the anisotropic conductive film to connect and conduct the bonding pins 61 and the corresponding bonding pads 12, it is possible to prevent short circuits between adjacent bonding pins 61 or adjacent bonding pads 12. Of course, the conductive paste layer 70 may be made of other conductive pastes. A conductive paste layer 70 may be provided independently for each bonding pin 61 and the corresponding bonding pad 12.

図６に示すように、図６は本発明に係る発光基板の第４の構造概略図である。図２に示す発光基板１００との相違点は、本発明の実施例において、発光基板１００に基板５０が設けられていないことにある。 As shown in FIG. 6, FIG. 6 is a schematic diagram of a fourth structure of a light-emitting substrate according to the present invention. The difference from the light-emitting substrate 100 shown in FIG. 2 is that in this embodiment of the present invention, the light-emitting substrate 100 does not include a substrate 50.

同様に、本発明の実施例において、駆動回路層１０はボンディングパッド１２をさらに含む。発光基板１００は、駆動回路層１０のＬＥＤチップ２０から遠い側に設けられる駆動チップ６０をさらに含む。駆動チップ６０は、対応するボンディングパッド１２に接続されるボンディングピン６１を含む。 Similarly, in an embodiment of the present invention, the driving circuit layer 10 further includes a bonding pad 12. The light emitting substrate 100 further includes a driving chip 60 provided on the side of the driving circuit layer 10 away from the LED chip 20. The driving chip 60 includes a bonding pin 61 connected to the corresponding bonding pad 12.

ボンディングピン６１が対応するボンディングパッド１２に接触接続されてもよい。ボンディングピン６１と対応するボンディングパッド１２との間に金属結合が形成される。つまり、ボンディングピン６１と対応するボンディングパッド１２との間が金属結合を介して接続されることで、ボンディングピン６１と対応するボンディングパッド１２との間に優れた導電性を有する。 The bonding pin 61 may be contact-connected to the corresponding bonding pad 12. A metal bond is formed between the bonding pin 61 and the corresponding bonding pad 12. In other words, the bonding pin 61 and the corresponding bonding pad 12 are connected via a metal bond, so that there is excellent conductivity between the bonding pin 61 and the corresponding bonding pad 12.

本発明の実施例に係る発光基板１００は、基板を含まないことにより、発光基板１００の厚さをさらに薄くし、発光基板１００の薄型化を実現することができる一方で、各ボンディングピン６１と対応するボンディングパッド１２との間のボンディングをより容易にし、ボンディング不良を防止することができる。 The light emitting substrate 100 according to the embodiment of the present invention does not include a substrate, which makes it possible to further reduce the thickness of the light emitting substrate 100 and realize a thinner light emitting substrate 100, while also making it easier to bond between each bonding pin 61 and the corresponding bonding pad 12 and preventing bonding failures.

図７に示すように、図７は本発明に係る発光基板の第５の構造概略図である。図６に示す発光基板１００との相違点は、本発明の実施例において、発光基板１００は、ボンディングパッド１２と駆動チップ６０との間に設けられる導電性ペースト層７０をさらに含むことにある。ボンディングピン６１と対応するボンディングパッド１２とが導電性ペースト層７０を介して接続される。 As shown in FIG. 7, FIG. 7 is a fifth structural schematic diagram of the light emitting substrate according to the present invention. The difference from the light emitting substrate 100 shown in FIG. 6 is that in the embodiment of the present invention, the light emitting substrate 100 further includes a conductive paste layer 70 provided between the bonding pad 12 and the driving chip 60. The bonding pin 61 and the corresponding bonding pad 12 are connected via the conductive paste layer 70.

同様に、導電性ペースト層７０の材料が異方性導電フィルムであってもよい。異方性導電フィルム中の導電粒子を用いてボンディングピン６１と対応するボンディングパッド１２とを接続して導通させることにより、隣接するボンディングピン６１の間又は隣接するボンディングパッド１２の間の短絡を防止することができる。勿論、導電性ペースト層７０が他の導電性ペーストで製造されてもよい。各ボンディングピン６１と対応するボンディングパッド１２とに対して独立して導電性ペースト層７０を設けることができる。 Similarly, the material of the conductive paste layer 70 may be an anisotropic conductive film. By using conductive particles in the anisotropic conductive film to connect and conduct the bonding pins 61 and the corresponding bonding pads 12, it is possible to prevent short circuits between adjacent bonding pins 61 or adjacent bonding pads 12. Of course, the conductive paste layer 70 may be made of other conductive pastes. A conductive paste layer 70 may be provided independently for each bonding pin 61 and the corresponding bonding pad 12.

本発明のいくつかの実施例において、発光基板１００は、Ｍｉｎｉ－ＬＥＤ表示パネル、Ｍｉｃｒｏ－ＬＥＤ表示パネルなどの表示パネルであってもよい。本発明のいくつかの実施例において、発光基板１００は、液晶表示装置のバックライトとして、表示パネルに表示するのに必要とするバックライトを供給するバックライトパネルであってもよい。 In some embodiments of the present invention, the light-emitting substrate 100 may be a display panel such as a Mini-LED display panel or a Micro-LED display panel. In some embodiments of the present invention, the light-emitting substrate 100 may be a backlight panel that supplies the backlight required for displaying on the display panel as a backlight for a liquid crystal display device.

したがって、図８に示すように、図８は本発明に係る表示装置の構造概略図である。本発明の実施例において、表示装置１０００が少なくとも２つの発光基板１００により接合形成される。発光基板１００は、上述したいずれかの実施例に記載の発光基板１００であるので、ここではその説明を省略する。 Therefore, as shown in FIG. 8, FIG. 8 is a structural schematic diagram of a display device according to the present invention. In an embodiment of the present invention, a display device 1000 is formed by bonding at least two light-emitting substrates 100. The light-emitting substrate 100 is the light-emitting substrate 100 described in any of the embodiments described above, so its description is omitted here.

表示装置１０００において、本発明の実施例は、ＬＥＤチップを反転ボンディングする方法により、カバープレートの封止層から遠い側の表面４０ａを発光基板の発光面とし、即ち表示装置１０００の発光面である。カバープレートの硬度が高いため、発光基板の表面の耐傷性を向上させ、ＬＥＤチップ及び駆動回路層に外部から傷つけることを防止することで、表示装置１０００の製品信頼性を向上させることができる。 In the display device 1000, in the embodiment of the present invention, the surface 40a of the cover plate farther from the sealing layer is used as the light-emitting surface of the light-emitting substrate, that is, the light-emitting surface of the display device 1000, by using a method of inverted bonding of the LED chip. Because the cover plate has a high hardness, the scratch resistance of the surface of the light-emitting substrate is improved, and the LED chip and the driving circuit layer are prevented from being damaged from the outside, thereby improving the product reliability of the display device 1000.

また、本発明のいくつかの実施例は、両面ボンディング及び基板エッチング技術を用いることにより、駆動チップを発光基板１００の裏面に設けることで、発光基板１００の狭額縁化又はフレームレス化の目的を達成することができる。少なくとも２つの発光基板１００を接合して表示装置１０００を形成した場合には、継ぎ目を効果的に低減し、表示装置１０００の表示効果を改善することができる。 In addition, some embodiments of the present invention use double-sided bonding and substrate etching techniques to provide the driving chip on the back surface of the light-emitting substrate 100, thereby achieving the purpose of narrowing the frame or making the light-emitting substrate 100 frameless. When at least two light-emitting substrates 100 are bonded together to form the display device 1000, the seams can be effectively reduced and the display effect of the display device 1000 can be improved.

したがって、本発明は、発光基板の製造方法をさらに提供する。具体的には図９及び図１０Ａ～図１０Ｅに示すように、図９は本発明に係る発光基板の製造方法のフローチャートである。図１０Ａ～図１０Ｅは本発明に係る発光基板の製造方法におけるステップ１０１～ステップ１０５で得られた構造概略図である。発光基板の製造方法は、具体的にステップ１０１～ステップ１０５を含む。 Therefore, the present invention further provides a method for manufacturing a light emitting substrate. Specifically, as shown in FIG. 9 and FIG. 10A to FIG. 10E, FIG. 9 is a flow chart of the method for manufacturing a light emitting substrate according to the present invention. FIG. 10A to FIG. 10E are schematic diagrams of the structure obtained in steps 101 to 105 in the method for manufacturing a light emitting substrate according to the present invention. The method for manufacturing a light emitting substrate specifically includes steps 101 to 105.

ステップ１０１、硬質基板を提供する。 Step 101: Provide a rigid substrate.

図１０Ａに示すように、硬質基板は、支持する役割を果たすように、ガラス基板、樹脂基板又はリジッド基板であってもよい。 As shown in FIG. 10A, the hard substrate may be a glass substrate, a resin substrate, or a rigid substrate to serve as a support.

ステップ１０２、前記硬質基板上には、基板と、ボンディング電極及びボンディングパッドを含む駆動回路層とを順次形成する。 Step 102: A substrate and a driving circuit layer including bonding electrodes and bonding pads are sequentially formed on the rigid substrate.

図１０Ｂに示すように、まず硬質基板１５上に基板５０を堆積形成する。基板５０は、フレキシブルＰＩ基板であってもよい。 As shown in FIG. 10B, first, a substrate 50 is deposited on a hard substrate 15. The substrate 50 may be a flexible PI substrate.

その後、基板５０上に駆動回路層１０を製造形成する。駆動回路層１０は、複数のボンディング電極１１と、複数のボンディングパッド１２とを含むことができ、基板５０上に設けられる薄膜トランジスタ機能層を含んでいてもよく、薄膜トランジスタ機能層の具体的な構成については従来技術を参照することができ、ここではその説明を省略する。ボンディング電極１１及びボンディングパッド１２がそれぞれ薄膜トランジスタ機能層に接続される。 Then, the drive circuit layer 10 is manufactured and formed on the substrate 50. The drive circuit layer 10 may include a plurality of bonding electrodes 11 and a plurality of bonding pads 12, and may include a thin-film transistor functional layer provided on the substrate 50. The specific configuration of the thin-film transistor functional layer may be referred to in the prior art, and the description thereof will be omitted here. The bonding electrodes 11 and the bonding pads 12 are each connected to the thin-film transistor functional layer.

本発明の実施例はガラス基板ＭＬＥＤプロセスを採用して、フラットパネルディスプレイプロセスを利用して駆動トランジスタ、即ち駆動回路層１０を製造して、アクティブ駆動を実現することができる。 The embodiment of the present invention adopts a glass substrate MLED process and utilizes a flat panel display process to manufacture the driving transistor, i.e., the driving circuit layer 10, to realize active driving.

ステップ１０３、複数のＬＥＤチップを提供し、前記ＬＥＤチップの接続電極を前記ボンディング電極に対応してボンディング接続する。 Step 103: Provide a plurality of LED chips, and bond and connect the connection electrodes of the LED chips to the bonding electrodes.

図１０Ｃに示すように、ＬＥＤチップ２０は、Ｍｉｎｉ－ＬＥＤチップ、Ｍｉｃｒｏ－ＬＥＤチップ等であってもよい。ＬＥＤチップ２０は、発光材料層２３、保護層２２、発光材料層２３上に堆積される第１電極及び第２電極をさらに含む。各ＬＥＤチップ２０が２つの接続電極２１を含む。各接続電極２１が第１電極又は第２電極に接続される。又はＬＥＤチップ２０において、一方の接続電極２１が第１電極であり、他方の接続電極２１が第２電極である。勿論、本発明におけるＬＥＤチップ２０の構成はこれに限定されるものではない。 As shown in FIG. 10C, the LED chip 20 may be a Mini-LED chip, a Micro-LED chip, etc. The LED chip 20 further includes a light-emitting material layer 23, a protective layer 22, a first electrode and a second electrode deposited on the light-emitting material layer 23. Each LED chip 20 includes two connection electrodes 21. Each connection electrode 21 is connected to the first electrode or the second electrode. Alternatively, in the LED chip 20, one connection electrode 21 is the first electrode, and the other connection electrode 21 is the second electrode. Of course, the configuration of the LED chip 20 in the present invention is not limited to this.

具体的には、本発明の実施例は、マストランスファー技術によりＬＥＤチップ２０をボンディングすることができる。ＬＥＤチップ２０を順方向にボンディングして反転して適用する。従来技術にＣＯＢ（Ｃｈｉｐ Ｏｎ Ｂｏａｒｄ，ベアチップを回路基板に直接搭載する）／チップ搭載技術を採用することに比べ、ボンディング効率、ボンディング精度、製品仕様などを向上させることができる。 Specifically, in the embodiment of the present invention, the LED chip 20 can be bonded using mass transfer technology. The LED chip 20 is bonded in the forward direction and then inverted for application. Compared to the conventional technology of using COB (Chip On Board, where a bare chip is directly mounted on a circuit board)/chip mounting technology, it is possible to improve bonding efficiency, bonding accuracy, product specifications, etc.

ステップ１０４、前記ＬＥＤチップの前記硬質基板から遠い側に封止層及びカバープレートを順次形成する。 Step 104: Sequentially form an encapsulation layer and a cover plate on the side of the LED chip farther from the rigid substrate.

図１０Ｄに示すように、封止層３０を形成するように、ＬＥＤチップ２０の硬質基板１５から遠い側に封止保護粘着剤を塗布する。次に封止層３０上にカバープレート４０を接合する。 As shown in FIG. 10D, a sealing protection adhesive is applied to the side of the LED chip 20 farther from the hard substrate 15 to form a sealing layer 30. Next, a cover plate 40 is bonded onto the sealing layer 30.

封止層３０の材料がＯＣＡ又は他の透明粘着剤であってもよい。透明粘着剤を用いて塗布して封止層３０を形成することにより、発光基板１００の光取り出し効率を向上させることができる。封止層３０がＬＥＤチップ２０を被覆するので、ＬＥＤチップ２０を固定保護する役割を果たすことができる。 The material of the sealing layer 30 may be OCA or other transparent adhesive. By applying a transparent adhesive to form the sealing layer 30, the light extraction efficiency of the light emitting substrate 100 can be improved. The sealing layer 30 covers the LED chip 20, and therefore plays a role in fixing and protecting the LED chip 20.

カバープレート４０は、ガラスカバープレート又は他の硬質透明カバープレートであってもよく、発光基板１００における他の機能膜層を支持保護する役割を果たす。カバープレート４０の封止層３０から遠い側の表面４０ａが発光基板１００の発光面であるため、カバープレート４０を透明カバープレートとして設けることにより、発光基板１００の光取り出し効率を向上させることができる。 The cover plate 40 may be a glass cover plate or other hard transparent cover plate, and serves to support and protect other functional film layers in the light-emitting substrate 100. Since the surface 40a of the cover plate 40 farther from the sealing layer 30 is the light-emitting surface of the light-emitting substrate 100, providing the cover plate 40 as a transparent cover plate can improve the light extraction efficiency of the light-emitting substrate 100.

ステップ１０５、前記硬質基板を剥離する。 Step 105: Peel off the hard substrate.

図１０Ｅに示すように、ステップ１０４で形成された発光基板を反転させる。その後、硬質基板１５をレーザリフトオフ法又は他の方法により基板５０から剥離する。レーザリフトオフ技術は当業者の周知技術であるため、ここではその説明を省略する。 As shown in FIG. 10E, the light-emitting substrate formed in step 104 is inverted. The rigid substrate 15 is then peeled off from the substrate 50 by a laser lift-off method or other method. The laser lift-off technique is well known to those skilled in the art, and therefore will not be described here.

さらに、発光基板に駆動チップをボンディングすることができる。駆動信号を駆動回路層１０に出力するように、駆動チップ６０がボンディングパッド１２に接続される必要がある。駆動チップが発光基板の側辺にボンディングされてもよいし、駆動基板の裏面にボンディングされてもよい。 In addition, a driver chip can be bonded to the light-emitting substrate. The driver chip 60 needs to be connected to the bonding pad 12 so as to output a drive signal to the drive circuit layer 10. The driver chip may be bonded to the side of the light-emitting substrate or to the back surface of the drive substrate.

具体的には、図１１及び図１２Ａ～図１２Ｄに示すように、図１１は本発明に係る発光基板の製造方法の第２のフローチャートである。図１２Ａ～図１２Ｄは本発明に係る発光基板の製造方法におけるステップ１０６～ステップ１０７で得られた構造概略図である。図９に示す発光基板の製造方法との相違点は、本発明の実施例において、発光基板の製造方法は、ステップ１０６～ステップ１０７をさらに含むことにある。 Specifically, as shown in FIG. 11 and FIG. 12A to FIG. 12D, FIG. 11 is a second flowchart of the manufacturing method of the light-emitting substrate according to the present invention. FIG. 12A to FIG. 12D are schematic diagrams of the structure obtained in steps 106 to 107 in the manufacturing method of the light-emitting substrate according to the present invention. The difference from the manufacturing method of the light-emitting substrate shown in FIG. 9 is that in the embodiment of the present invention, the manufacturing method of the light-emitting substrate further includes steps 106 to 107.

ステップ１０６、前記ボンディングパッドの前記カバープレートから遠い側の表面を露出させるように、前記基板を全面エッチング又は穿孔エッチングする。 Step 106: The substrate is etched or drilled to expose the surfaces of the bonding pads away from the cover plate.

いくつかの実施例において、図１２Ａに示すように、基板５０を全面エッチングする。つまり、ボンディングパッド１２のカバープレート４０から遠い側の表面を露出させるように、基板５０を除去する。 In some embodiments, as shown in FIG. 12A, the substrate 50 is blanket etched, i.e., the substrate 50 is removed to expose the surface of the bonding pad 12 away from the cover plate 40.

他のいくつかの実施例において、図１２Ｂに示すように、基板５０を穿孔エッチング処理して、ビアホール５０ａを形成する。各ボンディングパッド１２のカバープレート４０から遠い側の表面を露出させるように、ビアホール５０ａがボンディングパッド１２と対応して設けられる。 In some other embodiments, the substrate 50 is drilled and etched to form via holes 50a, as shown in FIG. 12B. The via holes 50a are provided in correspondence with the bonding pads 12 so as to expose the surface of each bonding pad 12 away from the cover plate 40.

ステップ１０７、駆動チップを提供するとともに、前記駆動チップを前記ボンディングパッドにボンディング接続する。 Step 107: Provide a driver chip and bond the driver chip to the bonding pad.

具体的には、駆動チップ６０は、複数のボンディングピン６１を含むことができる。ボンディングパッド１２が複数設けられてもよい。ボンディングピン６１の数がボンディングパッド１２の数と等しくてもよい。ボンディングパッド１２がボンディングピン６１と一対一で対応してボンディング接続される。駆動チップ６０はボンディングピン６１を介して駆動信号又は電源電圧などを出力する。 Specifically, the driving chip 60 may include a plurality of bonding pins 61. A plurality of bonding pads 12 may be provided. The number of bonding pins 61 may be equal to the number of bonding pads 12. The bonding pads 12 correspond one-to-one to the bonding pins 61 and are bonded. The driving chip 60 outputs a driving signal, a power supply voltage, etc., via the bonding pins 61.

いくつかの実施例において、図１２Ｃに示すように、基板５０が全面エッチングされた場合には、駆動チップ６０はボンディングピン６１及びボンディングパッド１２を介して駆動回路層１０とボンディングされる。 In some embodiments, as shown in FIG. 12C, when the substrate 50 is fully etched, the driver chip 60 is bonded to the driver circuit layer 10 via the bonding pins 61 and the bonding pads 12.

他のいくつかの実施例において、図１２Ｄに示すように、基板５０が穿孔エッチングされた場合には、各ボンディングピン６１がビアホール５０ａを介して対応するボンディングパッド１２に接続される。 In some other embodiments, as shown in FIG. 12D, when the substrate 50 is drill-etched, each bonding pin 61 is connected to a corresponding bonding pad 12 through a via hole 50a.

ビアホール５０ａの形状がボンディングピン６１の形状に一致することができる。ビアホール５０ａの孔径が対応するボンディングピン６１の径方向寸法よりも大きくなってもよい。ボンディングピン６１の少なくとも一部が対応するビアホール５０ａ内に位置する。 The shape of the via hole 50a can match the shape of the bonding pin 61. The hole diameter of the via hole 50a can be larger than the radial dimension of the corresponding bonding pin 61. At least a portion of the bonding pin 61 is located within the corresponding via hole 50a.

本発明の実施例において、導電性ペースト層７０を用いてボンディングピン６１と対応するボンディングパッド１２とを接続することができ、金属結合方法によりボンディングピン６１と対応するボンディングパッド１２との接続を実現することもできる。 In an embodiment of the present invention, the bonding pin 61 can be connected to the corresponding bonding pad 12 using a conductive paste layer 70, and the connection between the bonding pin 61 and the corresponding bonding pad 12 can also be achieved by a metal bonding method.

本発明の実施例に係る発光基板の製造方法は、基板５０をエッチング技術により穿孔又は全面エッチングし、駆動チップ６０を発光基板１００の裏面にボンディングすることができ、独立して側辺に駆動チップ６０をボンディングする空間を省くことで、狭額縁化又はフレームレス化の目的を達成する。また、本発明の実施例において、駆動回路層１０が薄膜層であり、基板５０の剥離やハーフエッチング、及び封止層３０の再付着技術により、駆動チップ６０及びＬＥＤチップ２０はいずれもカバープレート４０の片側にある。そして、本発明の実施例は、ＬＥＤチップ２０を含むカバープレート４０側に駆動チップ６０を直接ボンディングするため、駆動チップ６０が基板５０の穿孔や剥離によりボンディングパッド１２に接続され、従来技術において駆動チップ６０を回路基板に直接搭載した場合に比べて、技術的な難度が低い。 The manufacturing method of the light emitting substrate according to the embodiment of the present invention can bond the driving chip 60 to the back surface of the light emitting substrate 100 by drilling or etching the substrate 50 by etching technology, and achieve the purpose of narrowing the frame or making it frameless by eliminating the space for independently bonding the driving chip 60 to the side. In addition, in the embodiment of the present invention, the driving circuit layer 10 is a thin film layer, and the driving chip 60 and the LED chip 20 are both on one side of the cover plate 40 by peeling and half-etching the substrate 50 and re-attaching the sealing layer 30. In addition, in the embodiment of the present invention, the driving chip 60 is directly bonded to the cover plate 40 side including the LED chip 20, so that the driving chip 60 is connected to the bonding pad 12 by drilling or peeling the substrate 50, and the technical difficulty is lower than that of the conventional technology in which the driving chip 60 is directly mounted on the circuit board.

以上、本発明に係る発光基板、その製造方法及び表示装置について詳細に説明したが、本明細書では具体的な実施例を用いて本発明の原理及び実施形態について説明したが、以上の実施例の説明は本発明の方法及びその核心的な思想を理解するためのものに過ぎず、一方、当業者であれば、本発明の構想に基づき、具体的な実施形態及び適用範囲に変更を加えることがあり、要約すると、本明細書の内容は本発明を限定するものとして理解されるべきではない。 The light-emitting substrate, its manufacturing method, and display device according to the present invention have been described in detail above. Although the present specification describes the principles and embodiments of the present invention using specific examples, the explanation of the above examples is merely for understanding the method of the present invention and its core idea. Meanwhile, a person skilled in the art may make changes to the specific embodiments and scope of application based on the concept of the present invention. In summary, the contents of this specification should not be understood as limiting the present invention.

Claims (20)

発光基板であって、
ボンディング電極を含む駆動回路層と、
前記ボンディング電極に接続される接続電極を含むＬＥＤチップと、
前記ＬＥＤチップの前記駆動回路層から遠い側に設けられ、前記ＬＥＤチップ及び前記駆動回路層を被覆する封止層と、
前記封止層の前記ＬＥＤチップから遠い側に設けられ、前記封止層から遠い側の表面が前記発光基板の発光面であるカバープレートと、を含む発光基板。 A light emitting substrate,
a drive circuit layer including a bonding electrode;
an LED chip including a connection electrode connected to the bonding electrode;
a sealing layer provided on a side of the LED chip farther from the drive circuit layer and covering the LED chip and the drive circuit layer;
a cover plate provided on a side of the sealing layer away from the LED chip, the surface of the cover plate away from the sealing layer being a light emitting surface of the light emitting substrate. 前記発光基板は、前記駆動回路層の前記ＬＥＤチップから遠い側に設けられる基板をさらに含む請求項１に記載の発光基板。 The light-emitting substrate according to claim 1, further comprising a substrate provided on the driving circuit layer on a side farther from the LED chip. 前記駆動回路層がボンディングパッドをさらに含み、前記基板がフレキシブル基板であり、前記基板上には、前記ボンディングパッドと対応して設けられるとともに、前記ボンディングパッドの前記カバープレートから遠い側の表面を露出させるビアホールが設けられ、
前記発光基板は、前記ビアホールを介して対応する前記ボンディングパッドに接続されるボンディングピンを含む少なくとも１つの駆動チップをさらに含む請求項２に記載の発光基板。 the driving circuit layer further includes a bonding pad, the substrate is a flexible substrate, and a via hole is provided on the substrate, the via hole being provided in correspondence with the bonding pad and exposing a surface of the bonding pad on a side farther from the cover plate;
The light emitting substrate according to claim 2 , further comprising at least one driving chip including bonding pins connected to the corresponding bonding pads through the via holes. 前記ビアホールの孔径が対応する前記ボンディングピンの径方向寸法よりも大きく、前記ボンディングピンの少なくとも一部が対応する前記ビアホール内に位置する請求項３に記載の発光基板。 The light-emitting substrate according to claim 3, wherein the diameter of the via hole is larger than the radial dimension of the corresponding bonding pin, and at least a portion of the bonding pin is located within the corresponding via hole. 前記ボンディングピンが前記ビアホールと係合固定される請求項３に記載の発光基板。 The light-emitting substrate according to claim 3, wherein the bonding pin is engaged and fixed with the via hole. 前記駆動回路層がボンディングパッドをさらに含み、前記発光基板は、前記駆動回路層の前記ＬＥＤチップから遠い側に設けられる少なくとも１つの駆動チップをさらに含み、前記駆動チップが対応する前記ボンディングパッドに接続されるボンディングピンを含む請求項１に記載の発光基板。 The light-emitting substrate according to claim 1, wherein the driving circuit layer further includes a bonding pad, the light-emitting substrate further includes at least one driving chip provided on the driving circuit layer on a side farther from the LED chip, and the driving chip includes a bonding pin connected to the corresponding bonding pad. 前記ボンディングピンは対応する前記ボンディングパッドと接触接続され、前記ボンディングピンと対応する前記ボンディングパッドとの間に金属結合が形成されている請求項３に記載の発光基板。 The light-emitting substrate according to claim 3, wherein the bonding pins are in contact with the corresponding bonding pads, and a metal bond is formed between the bonding pins and the corresponding bonding pads. 前記発光基板は、前記ボンディングパッドと前記駆動チップとの間に設けられる導電性ペースト層をさらに含み、前記ボンディングピンと対応する前記ボンディングパッドとの間が前記導電性ペースト層を介して接続される請求項３に記載の発光基板。 The light-emitting substrate according to claim 3, further comprising a conductive paste layer provided between the bonding pad and the driver chip, and the bonding pin and the corresponding bonding pad are connected via the conductive paste layer. 前記発光基板は表示パネル又はバックライトパネルである請求項１に記載の発光基板。 The light-emitting substrate according to claim 1, wherein the light-emitting substrate is a display panel or a backlight panel. 少なくとも２つの請求項１に記載の発光基板から接合形成される表示装置。 A display device formed by bonding at least two light-emitting substrates according to claim 1. 前記発光基板は、前記駆動回路層の前記ＬＥＤチップから遠い側に設けられる基板をさらに含む請求項１０に記載の表示装置。 The display device according to claim 10, wherein the light-emitting substrate further includes a substrate provided on the side of the driving circuit layer farther from the LED chip. 前記駆動回路層がボンディングパッドをさらに含み、前記基板がフレキシブル基板であり、前記基板上には、前記ボンディングパッドと対応して設けられるとともに、前記ボンディングパッドの前記カバープレートから遠い側の表面を露出させるビアホールが設けられ、
前記発光基板は、前記ビアホールを介して対応する前記ボンディングパッドに接続されるボンディングピンを含む少なくとも１つの駆動チップをさらに含む請求項１１に記載の表示装置。 the driving circuit layer further includes a bonding pad, the substrate is a flexible substrate, and a via hole is provided on the substrate, the via hole being provided in correspondence with the bonding pad and exposing a surface of the bonding pad on a side farther from the cover plate;
The display device of claim 11 , wherein the light emitting substrate further comprises at least one driving chip including bonding pins connected to the corresponding bonding pads through the via holes. 前記ビアホールの孔径が対応する前記ボンディングピンの径方向寸法よりも大きく、前記ボンディングピンの少なくとも一部が対応する前記ビアホール内に位置する請求項１２に記載の表示装置。 The display device according to claim 12, wherein the diameter of the via hole is larger than the radial dimension of the corresponding bonding pin, and at least a portion of the bonding pin is located within the corresponding via hole. 前記ボンディングピンが前記ビアホールと係合固定される請求項１２に記載の表示装置。 The display device according to claim 12, wherein the bonding pin is engaged and fixed with the via hole. 前記駆動回路層がボンディングパッドをさらに含み、前記発光基板は、前記駆動回路層の前記ＬＥＤチップから遠い側に設けられる少なくとも１つの駆動チップをさらに含み、前記駆動チップが対応する前記ボンディングパッドに接続されるボンディングピンを含む請求項１０に記載の表示装置。 The display device according to claim 10, wherein the driving circuit layer further includes a bonding pad, the light-emitting substrate further includes at least one driving chip provided on a side of the driving circuit layer farther from the LED chip, and the driving chip includes a bonding pin connected to the corresponding bonding pad. 前記ボンディングピンは対応する前記ボンディングパッドと接触接続され、前記ボンディングピンと対応する前記ボンディングパッドとの間に金属結合が形成されている請求項１２に記載の表示装置。 The display device according to claim 12, wherein the bonding pins are in contact with the corresponding bonding pads, and a metal bond is formed between the bonding pins and the corresponding bonding pads. 前記発光基板は、前記ボンディングパッドと前記駆動チップとの間に設けられる導電性ペースト層をさらに含み、前記ボンディングピンと対応する前記ボンディングパッドとの間が前記導電性ペースト層を介して接続される請求項１２に記載の表示装置。 The display device according to claim 12, wherein the light-emitting substrate further includes a conductive paste layer provided between the bonding pad and the driving chip, and the bonding pin and the corresponding bonding pad are connected via the conductive paste layer. 前記発光基板は表示パネル又はバックライトパネルである請求項１０に記載の表示装置。 The display device according to claim 10, wherein the light-emitting substrate is a display panel or a backlight panel. 硬質基板を提供するステップと、
前記硬質基板上には、基板と、ボンディング電極及びボンディングパッドを含む駆動回路層とを順次形成するステップと、
複数のＬＥＤチップを提供し、前記ＬＥＤチップの接続電極を前記ボンディング電極に対応してボンディング接続するステップと、
前記ＬＥＤチップの前記硬質基板から遠い側に封止層及びカバープレートを順次形成するステップと、
前記硬質基板を剥離するステップと、を含む発光基板の製造方法。 Providing a rigid substrate;
Sequentially forming a substrate and a driving circuit layer including a bonding electrode and a bonding pad on the hard substrate;
providing a plurality of LED chips, and bonding connection electrodes of the LED chips to the bonding electrodes;
sequentially forming an encapsulation layer and a cover plate on a side of the LED chip away from the rigid substrate;
and peeling off the hard substrate. 前記発光基板の製造方法は、
前記ボンディングパッドの前記カバープレートから遠い側の表面を露出させるように、前記基板を全面エッチング又は穿孔エッチングするステップと、
駆動チップを提供するとともに、前記駆動チップを前記ボンディングパッドにボンディング接続するステップと、をさらに含む請求項１９に記載の発光基板の製造方法。 The method for producing the light emitting substrate includes:
blanket or hole etch the substrate to expose surfaces of the bonding pads remote from the cover plate;
The method for manufacturing a light emitting substrate according to claim 19 , further comprising: providing a driving chip; and bonding the driving chip to the bonding pad.
JP2022546048A 2022-06-28 2022-07-12 Light-emitting substrate, its manufacturing method, and display device Pending JP2024529801A (en)

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