JP2024140524A - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP2024140524A
JP2024140524A JP2023051698A JP2023051698A JP2024140524A JP 2024140524 A JP2024140524 A JP 2024140524A JP 2023051698 A JP2023051698 A JP 2023051698A JP 2023051698 A JP2023051698 A JP 2023051698A JP 2024140524 A JP2024140524 A JP 2024140524A
Authority
JP
Japan
Prior art keywords
avalanche photodiode
wiring
photoelectric conversion
conversion device
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023051698A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024140524A5 (https=
Inventor
大貴 白髭
Daiki Shirahige
寛 関根
Hiroshi Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2023051698A priority Critical patent/JP2024140524A/ja
Priority to US18/612,936 priority patent/US20240347573A1/en
Publication of JP2024140524A publication Critical patent/JP2024140524A/ja
Publication of JP2024140524A5 publication Critical patent/JP2024140524A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2023051698A 2023-03-28 2023-03-28 光電変換装置 Pending JP2024140524A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023051698A JP2024140524A (ja) 2023-03-28 2023-03-28 光電変換装置
US18/612,936 US20240347573A1 (en) 2023-03-28 2024-03-21 Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023051698A JP2024140524A (ja) 2023-03-28 2023-03-28 光電変換装置

Publications (2)

Publication Number Publication Date
JP2024140524A true JP2024140524A (ja) 2024-10-10
JP2024140524A5 JP2024140524A5 (https=) 2026-04-02

Family

ID=92976417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023051698A Pending JP2024140524A (ja) 2023-03-28 2023-03-28 光電変換装置

Country Status (2)

Country Link
US (1) US20240347573A1 (https=)
JP (1) JP2024140524A (https=)

Also Published As

Publication number Publication date
US20240347573A1 (en) 2024-10-17

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