JP2024062507A - Stripping system and method - Google Patents

Abstract

[Problem] To reduce the possibility of contacting the bonded surface when transporting a peeled substrate. [Solution] A peeling system according to the present disclosure includes a peeling device and a transport device. The peeling device peels an overlapped substrate, in which a first substrate and a second substrate are bonded, into the first substrate and the second substrate. The transport device receives the peeled first substrate from the peeling device and transports the received first substrate. The peeling device includes a first holding unit and a second holding unit. The first holding unit adsorbs and holds the non-bonded surface of the first substrate of the overlapped substrate. The second holding unit adsorbs and holds the non-bonded surface of the second substrate of the overlapped substrate. The transport device adsorbs and holds the non-bonded surface of the first substrate of the overlapped substrate and transports it. [Selected Figure] Figure 9

Description

This disclosure relates to a stripping system and a stripping method.

In recent years, for example, in the manufacturing process of semiconductor devices, semiconductor substrates such as silicon wafers and compound semiconductor wafers have become larger and thinner. Large-diameter, thin semiconductor substrates may warp or crack during transportation or polishing. For this reason, a support substrate is attached to the semiconductor substrate to reinforce it, before transportation and polishing, and then the support substrate is peeled off from the semiconductor substrate.

Patent document 1 discloses a peeling system that uses a transport robot to remove the peeled support substrate from the peeling device.

JP 2015-207776 A

This disclosure provides technology that can reduce the possibility of contacting the bonding surface when transporting a substrate after peeling.

A peeling system according to one aspect of the present disclosure includes a peeling device and a transport device. The peeling device peels an overlapped substrate, in which a first substrate and a second substrate are bonded, into the first substrate and the second substrate. The transport device receives the first substrate from the peeling device after peeling, and transports the received first substrate. The peeling device includes a first holding section and a second holding section. The first holding section adsorbs and holds the non-bonded surface of the first substrate of the overlapped substrate. The second holding section adsorbs and holds the non-bonded surface of the second substrate of the overlapped substrate. The transport device adsorbs and holds the non-bonded surface of the first substrate after peeling, and transports it.

According to the present disclosure, it is possible to reduce the possibility of contacting the bonding surface when transporting the substrate after peeling.

FIG. 1 is a schematic plan view showing the configuration of a separation system according to a first embodiment. FIG. 2 is a schematic side view showing the configuration of the delivery station according to the first embodiment. FIG. 3 is a schematic cross-sectional view of the laminated substrate according to the first embodiment. FIG. 4 is a schematic side view showing the configuration of the peeling device according to the first embodiment. FIG. 5 is a schematic plan view of the first holding portion according to the first embodiment. FIG. 6 is a schematic side view of the third holding portion according to the first embodiment. FIG. 7 is a schematic bottom view of the third holding portion according to the first embodiment. FIG. 8 is a schematic plan view showing an example of the positional relationship between the suction pads of the first holding unit, the suction pads of the third holding unit, and the upper wafer. FIG. 9 is a schematic plan view showing an example of the configuration of the upper holding unit of the second transfer device. FIG. 10 is a flowchart showing a procedure of a process executed by the separation system according to the first embodiment. FIG. 11 is a schematic diagram illustrating an example of the operation of the separation system according to the first embodiment. FIG. 12 is a schematic diagram illustrating an operation example of the separation system according to the first embodiment. FIG. 13 is a schematic diagram illustrating an operation example of the separation system according to the first embodiment. FIG. 14 is a schematic diagram illustrating an operation example of the separation system according to the first embodiment. FIG. 15 is a schematic diagram illustrating an operation example of the delamination system according to the first embodiment. FIG. 16 is a schematic diagram illustrating an operation example of the separation system according to the first embodiment. FIG. 17 is a schematic diagram illustrating an operation example of the delamination system according to the first embodiment. FIG. 18 is a schematic diagram illustrating an operation example of the separation system according to the first embodiment. FIG. 19 is a schematic diagram illustrating an operation example of the delamination system according to the first embodiment. FIG. 20 is a schematic diagram illustrating an operation example of the delamination system according to the first embodiment. FIG. 21 is a schematic diagram illustrating an operation example of the delamination system according to the first embodiment. FIG. 22 is a schematic diagram illustrating an operation example of the delamination system according to the first embodiment. FIG. 23 is a schematic side view illustrating an example of the configuration of a separation device according to the second embodiment. FIG. 24 is a schematic plan view showing the positional relationship between the suction pads, contact portions, and upper wafer of the third holding unit according to the second embodiment. FIG. 25 is a schematic plan view showing the positional relationship between the upper wafer, the suction portion of the first holding unit, the blade portion of the peeling inducing unit, and a plurality of detection units according to the third embodiment. FIG. 26 is a schematic side view showing the positional relationship between the upper wafer after peeling, the lower wafer after peeling, the suction portion of the first holding unit, the blade portion of the peeling inducer, and multiple detection units according to the third embodiment. FIG. 27 is a schematic plan view showing an example of the relationship between an upper wafer having a crack and a detection unit. FIG. 28 is a schematic plan view showing an example of the relationship between an upper wafer having a crack and a detection unit. FIG. 29 is a schematic plan view showing the positional relationship between the upper wafer, the suction portion of the first holding unit, the blade portion of the peeling inducing unit, and the detection unit according to the fourth embodiment. FIG. 30 is a schematic side view showing the positional relationship between the laminated substrate, the suction portion of the first holding portion, and the detection portion according to the fourth embodiment. FIG. 31 is a schematic side view showing an example of the relationship between the upper wafer and the detection unit in a normal state. FIG. 32 is a schematic side view showing an example of the relationship between the upper wafer and the detection unit in a normal state. FIG. 33 is a schematic side view showing an example of the relationship between the upper wafer and the detection unit when the upper wafer is cracked during the peeling operation. FIG. 34 is a diagram showing an operation example of the collection process according to the fifth embodiment. FIG. 35 is a diagram showing an operation example of the collection process according to the fifth embodiment. FIG. 36 is a diagram showing an operation example of the collection process according to the fifth embodiment. FIG. 37 is a diagram showing an operation example of the collection process according to the fifth embodiment. FIG. 38 is a schematic side view illustrating an example of the configuration of a delamination device according to the sixth embodiment. FIG. 39 is a schematic plan view of a receiving portion according to the sixth embodiment. FIG. 40 is a schematic side view illustrating an example of the configuration of a delamination device according to the seventh embodiment. FIG. 41 is a schematic perspective view illustrating an example of the configuration of a delamination apparatus according to the seventh embodiment. FIG. 42 is a flowchart showing the procedure of the adherent matter suction process of the peeling apparatus according to the seventh embodiment. FIG. 43 is a diagram illustrating an example of the operation of the delamination device according to the seventh embodiment. FIG. 44 is a diagram illustrating an example of the operation of the delamination device according to the seventh embodiment. FIG. 45 is a schematic plan view illustrating a configuration example of a delamination apparatus according to the eighth embodiment. FIG. 46 is a schematic plan view illustrating a configuration example of a separation device according to the ninth embodiment. FIG. 47 is a schematic perspective view illustrating a configuration example of a delamination apparatus according to the tenth embodiment. FIG. 48 is a schematic perspective view showing a configuration example of a delamination apparatus according to the tenth embodiment.

Below, a detailed description will be given of a form (hereinafter, "embodiment") for implementing the peeling system and peeling method according to the present disclosure with reference to the drawings. Note that the present disclosure is not limited to this embodiment. Furthermore, each embodiment can be appropriately combined as long as the processing content is not contradictory. Furthermore, the same parts in each of the following embodiments are given the same reference numerals, and duplicated explanations will be omitted.

In addition, in the embodiments described below, expressions such as "constant," "orthogonal," "vertical," and "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "vertical," or "parallel" in the strict sense. In other words, each of the above expressions allows for deviations due to, for example, manufacturing precision, installation precision, and the like.

In addition, in order to make the explanation easier to understand, the drawings referred to below may show an orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis directions are defined as being perpendicular to each other, and the positive direction of the Z-axis is the vertically upward direction. Also, the direction of rotation about the vertical axis may be referred to as the θ direction.

In recent years, for example, in the manufacturing process of semiconductor devices, semiconductor substrates such as silicon wafers and compound semiconductor wafers have become larger and thinner. Large-diameter, thin semiconductor substrates may warp or crack during transportation or polishing. For this reason, a support substrate is attached to the semiconductor substrate to reinforce it, before transportation and polishing, and then the support substrate is peeled off from the semiconductor substrate.

Patent document 1 discloses a peeling system that uses a transport robot to remove the peeled support substrate from the peeling device.

In the peeling system of Patent Document 1, the transport robot receives the support substrate held by the peeling device from the bonding surface side. Therefore, in the peeling system of Patent Document 1, there is a possibility that the bonding surface of the support substrate will come into contact with the transport robot, causing dust and other particles to adhere to the bonding surface of the support substrate. For this reason, there is room for further improvement in terms of maintaining the cleanliness of the bonding surface when transporting the substrate after peeling.

Therefore, there is a need for technology that can reduce the possibility of contacting the bonding surface when transporting the substrate after peeling.

First Embodiment
<Structure of Peeling System>
First, the configuration of a delamination system 100 according to the first embodiment will be described with reference to Figs. 1 to 3. Fig. 1 is a schematic plan view showing the configuration of the delamination system 100 according to the first embodiment. Fig. 2 is a schematic side view showing the configuration of a delivery station 2 according to the first embodiment. Fig. 3 is a schematic cross-sectional view of a laminated substrate T according to the first embodiment.

The peeling system 100 shown in FIG. 1 peels off the first substrate W1 from a laminated substrate T in which the first substrate W1 and the second substrate W2 are bonded together as shown in FIG. 3, for example.

In the following, the first substrate W1 will be referred to as the "upper wafer W1" and the second substrate W2 will be referred to as the "lower wafer W2." In other words, the upper wafer W1 is an example of the first substrate, and the lower wafer W2 is an example of the second substrate.

Furthermore, in the following, as shown in FIG. 3, the surface of the upper wafer W1 that is bonded to the lower wafer W2 is referred to as the "bonding surface W1j," and the surface opposite the bonding surface W1j is referred to as the "non-bonding surface W1n." Furthermore, the surface of the lower wafer W2 that is bonded to the upper wafer W1 is referred to as the "bonding surface W2j," and the surface opposite the bonding surface W2j is referred to as the "non-bonding surface W2n."

The upper wafer W1 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer on which multiple electronic circuits are formed. The lower wafer W2 is a bare wafer on which no electronic circuits are formed. The upper wafer W1 and the lower wafer W2 have approximately the same diameter. Note that electronic circuits may be formed on the second substrate W2.

The upper wafer W1 and the lower wafer W2 may be bonded together, for example, chemically. In this case, the surfaces (bonding surfaces W1j, W2j) of the upper wafer W1 and the lower wafer W2 are modified by plasma processing, and the modified surfaces are made hydrophilic with pure water, after which they are bonded together by van der Waals forces and hydrogen bonds (intermolecular forces). The upper wafer W1 and the lower wafer W2 may also be bonded together by an adhesive.

As shown in FIG. 1, the peeling system 100 includes a loading/unloading station 1, a transfer station 2, and a processing station 3. The loading/unloading station 1, the transfer station 2, and the processing station 3 are arranged in the positive direction of the Y axis in the order of loading/unloading station 1, transfer station 2, and processing station 3.

In the loading/unloading station 1, the laminated substrate T is loaded, and the upper wafer W1 and the lower wafer W2 are unloaded after peeling. The loading/unloading station 1 includes a placement unit 4 and a first transfer device 5.

The mounting section 4 is provided with a number of cassette mounting stages, and each cassette mounting stage holds a cassette Ct that houses a laminated substrate T, a cassette C1 that houses a peeled upper wafer W1, and a cassette C2 that houses a peeled lower wafer W2.

The first transfer device 5 is disposed adjacent to the mounting unit 4 on the positive side of the Y axis. The first transfer device 5 transfers the laminated substrate T, the peeled upper wafer W1, and the peeled lower wafer W2. The first transfer device 5 includes a transfer arm unit capable of moving horizontally, ascending and descending vertically, and rotating about the vertical direction, and a substrate holder attached to the tip of the transfer arm unit. The first transfer device 5 is an example of a substrate transfer device.

In the loading/unloading station 1, the first transport device 5 transports the laminated substrate T from the placement unit 4 to the delivery station 2, and transports the upper wafer W1 and lower wafer W2 after peeling from the delivery station 2 to the placement unit 4.

In the delivery station 2, a delivery process is performed in which the laminated substrate T, the peeled upper wafer W1, and the peeled lower wafer W2 are delivered. As shown in FIG. 2, the delivery station 2 includes, for example, a first delivery section 25, a second delivery section 26, a delivery section with an inversion mechanism 27, and an aligner 28. The first delivery section 25, the second delivery section 26, the delivery section with an inversion mechanism 27, and the aligner 28 are arranged, for example, vertically upward (positive direction of the Z axis) in the order of the first delivery section 25, the second delivery section 26, the delivery section with an inversion mechanism 27, and the aligner 28.

The laminated substrate T transferred from the loading/unloading station 1 is placed on the first transfer section 25. The laminated substrate T placed on the first transfer section 25 is transferred to the processing station 3 by the second transfer device 6 described below.

The peeled lower wafer W2 is placed on the second transfer section 26. The peeled lower wafer W2 placed on the second transfer section 26 is transported to the load/unload station 1 by the first transport device 5.

The transfer section with inversion mechanism 27 is equipped with an inversion mechanism that inverts the upper wafer W1 after peeling. The upper wafer W1 after peeling is placed on the transfer section with inversion mechanism 27. The upper wafer W1 after peeling placed on the transfer section with inversion mechanism 27 is inverted by the inversion mechanism and is transferred to the loading/unloading station 1 by the first transfer device 5.

The aligner 28 performs alignment processing of the laminated substrate T, the upper wafer W1 after peeling, and the lower wafer W2 after peeling. For example, the aligner 28 includes a holding unit that adsorbs and holds and rotates the laminated substrate T, the upper wafer W1 after peeling, and the lower wafer W2 after peeling, and a detection unit that detects the positions of the notches of the laminated substrate T, the upper wafer W1 after peeling, and the lower wafer W2 after peeling.

The aligner 28 detects the position of the notch portion of the laminated substrate T with the detection unit while rotating the laminated substrate T adsorbed and held by the holding unit, and can adjust the position of the notch portion to adjust the horizontal orientation of the laminated substrate T. The aligner 28 also detects the position of the notch portion of the upper wafer W1 after peeling with the detection unit while rotating the upper wafer W1 after peeling that is adsorbed and held by the holding unit, and can adjust the position of the notch portion to adjust the horizontal orientation of the upper wafer W1 after peeling. The aligner 28 also detects the position of the notch portion of the lower wafer W2 after peeling with the detection unit while rotating the lower wafer W2 after peeling that is adsorbed and held by the holding unit, and can adjust the position of the notch portion to adjust the horizontal orientation of the lower wafer W2 after peeling.

In the processing station 3, a process of peeling off the laminated substrate T is mainly performed. The processing station 3 includes a second transport device 6 and a peeling device 7. The second transport device 6 and the peeling device 7 are arranged in the positive direction of the X-axis in the order of the second transport device 6, the peeling device 7.

The second transfer device 6 transfers the laminated substrate T, the peeled upper wafer W1, and the peeled lower wafer W2 between the delivery station 2 and the peeling device 7. The second transfer device 6 includes a transfer arm (not shown) that can move up and down in the vertical direction and rotate around the vertical direction, and an upper holding part 61 (see Figures 9 and 21) that is attached to the tip of the transfer arm and suction-holds the peeled upper wafer W1. The second transfer device 6 further includes a lower holding part 62 (see Figure 18) that is attached to the tip of the transfer arm and holds the laminated substrate T and the peeled lower wafer W2. The specific configuration of the upper holding part 61 included in the second transfer device 6 will be described later. The second transfer device 6 is an example of a substrate transfer device.

In the processing station 3, the second transfer device 6 performs a process of transferring the laminated substrate T from the delivery station 2 to the peeling device 7, and a process of transferring the upper wafer W1 and the lower wafer W2 after peeling from the peeling device 7 to the delivery station 2.

The peeling device 7 performs a peeling process to peel the laminated substrate T into an upper wafer W1 and a lower wafer W2. The specific configuration and operation of the peeling device 7 will be described later.

The peeling system 100 also includes a control device 8. The control device 8 controls the operation of the peeling system 100. The control device 8 is, for example, a computer, and includes a control unit 81 and a memory unit 82. The memory unit 82 stores programs that control various processes such as the peeling process. The control unit 81 controls the operation of the peeling system 100 by reading and executing the programs stored in the memory unit 82.

The program may be recorded on a computer-readable recording medium and installed from the recording medium into the memory unit 82 of the control device 8. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

In the peeling system 100 configured as described above, first, the first transport device 5 of the loading/unloading station 1 removes the laminated substrate T from the cassette Ct placed on the placement section 4, and then transports the removed laminated substrate T to the delivery station 2 and places it on the first delivery section 25.

Then, the laminated substrate T placed on the first transfer section 25 is removed from the first transfer section 25 by the second transfer device 6 of the processing station 3 and carried into the aligner 28. The horizontal orientation of the laminated substrate T carried into the aligner 28 is adjusted by the aligner 28, and then the laminated substrate T is removed from the aligner 28 by the second transfer device 6 and carried into the peeling device 7. The laminated substrate T is then separated into an upper wafer W1 and a lower wafer W2 by the peeling device 7.

After peeling, the lower wafer W2 is removed from the peeling device 7 by the second transfer device 6 and carried into the aligner 28. The lower wafer W2 carried into the aligner 28 has its horizontal orientation adjusted by the aligner 28, and is then placed on the second delivery section 26 by the second transfer device 6.

The lower wafer W2 placed on the second transfer section 26 is removed from the second transfer section 26 by the first transfer device 5 and stored in the cassette C2 placed on the loading/unloading station 1. The first transfer device 5 holds and transfers the lower surface side, i.e., the non-bonding surface (W2n) side, of the lower wafer W2. The cassette C2 is then removed from the loading/unloading station 1 and collected. In this way, the processing of the lower wafer W2 is completed.

Meanwhile, the upper wafer W1 after peeling is removed from the peeling device 7 by the second transfer device 6 and carried into the aligner 28. Here, the upper surface side, i.e., the non-bonding surface W1n side of the upper wafer W1 after peeling is held by the third holding part 30 (see FIG. 4) of the peeling device 7 described later. The second transfer device 6 suction-holds the non-bonding surface W1n side of the upper wafer W1 after peeling held by the third holding part 30 from above. The upper wafer W1 carried into the aligner 28 has its horizontal orientation adjusted by the aligner 28, and is then placed on the transfer part 27 with an inversion mechanism by the second transfer device 6.

The upper wafer W1 placed on the transfer section 27 with the inversion mechanism is inverted by the inversion mechanism. As a result, the upper wafer W1 is in a state where the bonding surface W1j faces upward. The inverted upper wafer W1 is removed from the transfer section 27 with the inversion mechanism by the first transfer device 5 and stored in the cassette C1 placed on the loading/unloading station 1. The first transfer device 5 holds and transports the lower surface side, i.e., the non-bonding surface (W1n) side, of the upper wafer W1. The cassette C1 is then removed from the loading/unloading station 1 and collected. In this way, the processing of the upper wafer W1 is also completed. The alignment processing of the laminated substrate T, the upper wafer W1 after peeling, and the lower wafer W2 after peeling by the aligner 28 may be omitted.

<Configuration of Peeling Device>
Next, the configuration of the peeling device 7 installed in the processing station 3 will be described with reference to Fig. 4. Fig. 4 is a schematic side view showing the configuration of the peeling device 7 according to the first embodiment.

The peeling device 7 includes a first holding unit 10, a second holding unit 20, a third holding unit 30, a peeling inducement unit 40, multiple (here, two) lifting mechanisms 50, and a support 60.

The peeling device 7 adsorbs and holds the upper wafer W1 side of the laminated substrate T from above using the first holding part 10, and adsorbs and holds the lower wafer W2 side of the laminated substrate T from below using the second holding part 20. The peeling device 7 then uses the lifting mechanism 50 to move the upper wafer W1 in a direction away from the surface of the lower wafer W2 (here, the positive direction of the Z axis).

As a result, the upper wafer W1 held by the first holding part 10 is continuously peeled off from the lower wafer W2 from one end to the other end. Each component will be described in detail below.

The first holding part 10 suction-holds the non-bonding surface W1n of the upper wafer W1 of the laminated substrate T. The first holding part 10 includes an elastic member 11 and a plurality of suction parts 12. The elastic member 11 is a thin plate-like member and is formed of a metal such as sheet metal. The elastic member 11 has an opening 115 in the center for passing the third holding part 30 through. The elastic member 11 is disposed above the upper wafer W1 and facing the upper wafer W1.

The suction parts 12 are provided on the surface of the elastic member 11 that faces the upper wafer W1 (here, the lower surface). Each suction part 12 has a main body part 121 that is fixed to the elastic member 11 and a suction pad 122 that is provided on the lower part of the main body part 121.

Each suction unit 12 is connected to an intake device 124 such as a vacuum pump via an intake pipe 123. The first holding unit 10 uses the suction force generated by the intake device 124 to suction the non-bonding surface W1n (see FIG. 3) of the upper wafer W1 with the multiple suction units 12. As a result, the upper wafer W1 is suction-held by the first holding unit 10.

The suction pad 122 provided on the suction unit 12 is preferably of a type that undergoes little deformation. This is because if the suction pad 122 is significantly deformed when the lifting mechanism 50 described below pulls the first holding unit 10, the suction pad 122 may significantly deform the suctioned portion of the upper wafer W1, which may damage the upper wafer W1 or the lower wafer W2. Specifically, it is preferable to use, for example, a suction pad 122 that has ribs on the suction surface or a flat pad with a clearance height of 0.5 mm or less.

Here, the configuration of the first holding unit 10 will be described in more detail with reference to FIG. 5. FIG. 5 is a schematic plan view of the first holding unit 10 according to the first embodiment.

The elastic member 11 comprises a main body 111 and a plurality of (here, two) extensions 112. The main body 111 has an opening 115 in the center for passing the third holding portion 30 through. Here, the center of the main body 111 refers to the area including the center of the main body 111. The plurality of suction portions 12 are disposed on the lower surface of the main body 111, i.e., the surface facing the laminated substrate T.

The multiple (here, two) extensions 112 are portions of the outer periphery of the main body 111 that extend from the outer periphery. Specifically, one of the two extensions 112 is a portion of the outer periphery of the main body 111 that is located closest to the starting point of peeling (the outer periphery on the negative Y-axis side) that extends toward the opposite side to the direction of peeling (the negative Y-axis side). The other of the two extensions 112 is a portion of the outer periphery of the main body 111 that is located closest to the end point of peeling (the outer periphery on the positive Y-axis side) that extends toward the direction of peeling (the positive Y-axis side). The ends of the multiple extensions 112 are each connected to a support member 51 of the lifting mechanism 50.

A plurality of (here, six) suction parts 12 are arranged on the lower surface of the main body 111. As shown in FIG. 5, three of the six suction parts 12 are arranged on the periphery of the outer periphery of the main body 111, which is located closest to the starting point of peeling (outer periphery in the negative Y-axis direction). Two of the six suction parts 12 are arranged in a line around the opening 115 of the main body 111 in a direction (X-axis direction) perpendicular to the proceeding direction of peeling (positive Y-axis direction). The remaining one of the six suction parts 12 is arranged on the outer periphery of the main body 111, which is located closest to the end point of peeling (outer periphery in the positive Y-axis direction). The six suction parts 12 are arranged in the order of three suction parts 12, two suction parts 12, and one suction part 12 along the proceeding direction of peeling (Y-axis direction). In this way, the plurality of suction parts 12 are arranged in accordance with the proceeding direction of peeling, so that the upper wafer W1 can be efficiently peeled off from the lower wafer W2.

Of the multiple suction parts 12, the suction part 12 located closest to the peeling starting point (here, the negative Y-axis side) is located in a position close to the portion where the blade portion 41 (see FIG. 3) of the peeling inducer 40 (see FIG. 4) described later abuts. In other words, the blade portion 41 of the peeling inducer 40 abuts against the side of the laminated substrate T near the suction part 12 located on the negative Y-axis side. This ensures that peeling of the upper wafer W1 can be started reliably from the peeling initiation portion that triggers peeling of the upper wafer W1 from the lower wafer W2. Here, an example is shown in which six suction parts 12 are provided on the elastic member 11, but the number of suction parts 12 provided on the elastic member 11 is not limited to six.

Returning to FIG. 4, other configurations of the peeling device 7 will be described. The second holding part 20 is disposed below the first holding part 10, and holds by suction the lower wafer W2 of the laminated substrate T. The second holding part 20 includes a disk-shaped main body part 21 and a support member 22 that supports the main body part 21.

The main body 21 is formed of a metal member such as aluminum. An adsorption surface 201 is provided on the upper surface of the main body 21. The adsorption surface 201 is formed to have a diameter substantially equal to that of the lower wafer W2. The adsorption surface 201 is a porous body, and is formed of a resin member such as PCTFE (polychlorotrifluoroethylene).

Inside the main body 21, a suction space 202 is formed that communicates with the outside via the suction surface 201. The suction space 202 is connected to an intake device 204 such as a vacuum pump via an intake pipe 203. The second holding part 20 uses the negative pressure generated by the intake of the intake device 204 to adsorb the non-bonding surface W2n (see FIG. 3) of the lower wafer W2 onto the suction surface 201, thereby adsorbing and holding the laminated substrate T.

In addition, if non-adhesive portions such as grooves are formed on the adsorption surface with the lower wafer W2, cracks may occur in the lower wafer W2 at the non-adhesive portions. Therefore, the adsorption surface 201 of the main body 21 is made flat and does not have non-adhesive portions such as grooves. This makes it possible to prevent cracks from occurring in the lower wafer W2.

Furthermore, the suction surface 201 is made of a resin material such as PCTFE, which further reduces damage to the lower wafer W2.

The second holding unit 20 is supported by a support member 22 and a rotation and lifting mechanism 23 (an example of a rotating unit). The rotation and lifting mechanism 23 rotates the second holding unit 20 by rotating the support member 22 about a vertical axis. The rotation and lifting mechanism 23 also moves the support member 22 in the vertical direction to raise and lower the second holding unit 20.

The third holding part 30 is disposed above the first holding part 10, and suction-holds the non-bonding surface W1n of the peeled upper wafer W1 held by the first holding part 10. The third holding part 30 includes a main body part 31 (an example of a base part), a plurality of suction pads 32, a plurality of contact parts 33 (see FIG. 6), and a lifting mechanism 34.

The main body 31 is, for example, a cylindrical member, and is inserted into the opening 115 of the elastic member 11. The main body 31 supports a plurality of suction pads 32 and a plurality of contact portions 33. The main body 31 is an example of a base portion. The plurality of suction pads 32 and the plurality of contact portions 33 are provided on the lower portion of the main body 31. The specific configuration of the plurality of suction pads 32 and the plurality of contact portions 33 will be described later. The lifting mechanism 34 moves the main body 31 in the vertical direction to raise and lower the plurality of suction pads 32 and the plurality of contact portions 33 supported by the third holding portion 30. Specifically, the lifting mechanism 34 raises and lowers the plurality of suction pads 32 and the plurality of contact portions 33 between a standby position, a suction position where the upper wafer W1 held by the first holding portion 10 is suctioned after peeling, and a transfer position where the upper wafer W1 held by the third holding portion 30 is transferred to the second transfer device 6. The lifting mechanism 34 is supported by, for example, a support 60. The support 60 is a plate-shaped member extending horizontally and is disposed above the first holding unit 10. The lifting mechanism 34 is fixed, for example, to the upper part of the support 60.

The third holding unit 30 can receive the peeled upper wafer W1 from the first holding unit 10 and stably transfer the received first holding unit 10 to the second transfer device 6.

The peeling inducer 40 is disposed outside the second holding part 20 and forms a peeling initiation site on the side surface at one end of the laminated substrate T, which triggers peeling of the upper wafer W1 from the lower wafer W2.

The peeling inducer 40 includes a blade 41, a moving mechanism 42, and a lifting mechanism 43. The blade 41 includes a sharp member 41a and a support 41b. The sharp member 41a is, for example, a flat blade, and is supported by the support 41b so that the cutting edge protrudes horizontally toward the laminated substrate T.

The movement mechanism 42 moves the blade portion 41 along a rail extending in the Y-axis direction. The lifting mechanism 43 is fixed to the support 60, for example, and moves the movement mechanism 42 in the vertical direction. This adjusts the height position of the blade portion 41, i.e., the contact position with the side surface of the laminated substrate T.

The peeling inducer 40 adjusts the height position of the blade portion 41 using the lifting mechanism 43, and then moves the blade portion 41 horizontally (here, in the positive direction of the Y axis) using the moving mechanism 42. Furthermore, the peeling inducer 40 abuts the sharp member 41a of the blade portion 41 against the joint between the upper wafer W1 and the lower wafer W2 that is exposed on the side surface of the laminated substrate T. This forms a peeling initiation site in the laminated substrate T that serves as a trigger for peeling the upper wafer W1 from the lower wafer W2.

The multiple (here, two) lifting mechanisms 50 raise and lower the first holding portion 10. The multiple lifting mechanisms 50 are provided in one-to-one correspondence with the multiple (here, two) extension portions 112 of the elastic member 11. The lifting mechanism 50 includes a support member 51, a moving mechanism 52, and a load cell 53.

The support member 51 is a member that extends in the vertical direction (Z-axis direction), with one end connected to the extension portion 112 of the elastic member 11 (see Figure 5) and the other end connected to the movement mechanism 52 via the support 60.

The movement mechanism 52 is fixed to the upper part of the support 60 and moves the support member 51 connected to the lower part in the vertical direction. The load cell 53 detects the load applied to the support member 51.

The lifting mechanism 50 uses the moving mechanism 52 to move the support member 51 vertically upward, thereby pulling up the first holding part 10 connected to the support member 51. At this time, the lifting mechanism 50 can pull the first holding part 10 while controlling the force applied to the upper wafer W1 based on the detection result by the load cell 53.

Here, as shown in Figures 4 and 5, the support member 51 that serves as the force point for pulling up, i.e., the support member 51 located on the negative side of the Y axis, is located on the opposite side in the direction of peeling from the suction part 12 that serves as the fulcrum for pulling up, i.e., the suction part 12 located closest to the starting point of peeling.

Therefore, a clockwise rotational force (moment) is generated on the side surface of the laminated substrate T, which is the point of action for lifting (the portion from which peeling begins) in FIG. 3. This allows the lifting mechanism 50 to pull the upper wafer W1 by flipping it up from its outer edge, thereby efficiently peeling the upper wafer W1 from the lower wafer W2.

The first holding unit 10 is supported by a lifting mechanism 50, which is supported by a support 60. The support 60 is supported by a fixing member (not shown) attached to the ceiling of the peeling device 7.

The peeling device 7 further includes a plurality of lifting pins 29 (see FIG. 18) that support the laminated substrate T and the lower wafer W2 after peeling. The plurality of lifting pins 29 are inserted into through holes (not shown) formed through the second holding part 20, and are configured to be freely raised and lowered by a lifting mechanism (not shown). The plurality of lifting pins 29 are used to temporarily support the laminated substrate T and the lower wafer W2 when the laminated substrate T is loaded or when the lower wafer W2 is unloaded after peeling.

<Configuration of third holding portion>
Next, the configuration of the third holding section 30 will be described in more detail with reference to Fig. 6 and Fig. 7. Fig. 6 is a schematic side view of the third holding section 30 according to the first embodiment. Fig. 7 is a schematic bottom view of the third holding section 30 according to the first embodiment.

As shown in FIG. 6, the third holding part 30 has multiple (here, three) suction pads 32 provided on the underside of the main body part 31. The suction pads 32 are, for example, rubber pads. Specifically, the suction pads 32 have a bellows shape. This allows the suction pads 32 to be stretchable in the vertical direction and flexible in the horizontal direction. That is, the suction pads 32 can be displaced in the vertical and horizontal directions. Therefore, the suction pads 32 can follow the vertical and horizontal displacements of the upper wafer W1. The third holding part 30 having such suction pads 32 can stably hold the upper wafer W1 after peeling.

The plurality of suction pads 32 are connected to a suction device 324 such as a vacuum pump via an intake pipe 321. The third holding unit 30 suctions the non-bonding surface W1n of the upper wafer W1 with the plurality of suction pads 32 by the suction force generated by the suction device 324. As a result, the upper wafer W1 is suction-held by the third holding unit 30. The intake pipe 321 is also provided with an intake detector 322 that detects the suction of the upper wafer W1 by the third holding unit 30. The intake detector 322 is used to check whether the suction pads 32 of the third holding unit 30 can normally suction the upper wafer W1 when the upper wafer W1 is transferred from the first holding unit 10 to the third holding unit 30. For example, the intake detector 322 may be a vacuum sensor. In this case, the intake detector 322 detects the intake pressure (negative pressure in the intake pipe 321).

As shown in FIG. 7, the multiple (three in this example) suction pads 32 are arranged concentrically in a plan view. With this configuration, it is easy to keep the upper wafer W1 horizontal when the upper wafer W1 is being held by suction. Even if any of the multiple suction pads 32 is unable to suction the upper wafer W1, the other suction pads 32 can maintain suction, so the upper wafer W1 can be held more stably after peeling.

The multiple (here, three) contact portions 33 are provided on the underside of the main body portion 31. The multiple contact portions 33 contact the non-bonding surface W1n of the upper wafer W1 that is adsorbed by the multiple suction pads 32. As shown in FIG. 7, the multiple (here, three) contact portions 33 are arranged concentrically in a plan view. This configuration makes it possible to prevent vibration and wobbling and keep the upper wafer W1 horizontal.

As shown in FIG. 6, the end of the contact portion 33 that comes into contact with the non-bonding surface W1n of the upper wafer W1 is hemispherical. With this configuration, the contact area between the contact portion 33 and the upper wafer W1 can be reduced, thereby reducing the load on the upper wafer W1.

The contact portion 33 includes an adjustment portion 331. The adjustment portion 331 adjusts the amount of protrusion of the contact portion 33 from the main body portion 31 to the non-bonding surface W1n of the upper wafer W1. With this configuration, the height of the contact portion 33 can be changed depending on the position of the upper wafer W1.

Next, the arrangement of the suction pads 122 of the first holding unit 10 and the suction pads 32 of the third holding unit 30 will be described with reference to FIG. 8. FIG. 8 is a schematic plan view showing an example of the positional relationship between the suction pads 122 of the first holding unit 10, the suction pads 32 of the third holding unit 30, and the upper wafer W1.

As shown in FIG. 8, the multiple suction pads 122 provided on the first holding unit 10 suction the area of the non-bonding surface W1n of the upper wafer W1 other than the central portion. Here, the central portion of the non-bonding surface W1n of the upper wafer W1 refers to the area including the center of the non-bonding surface W1n of the upper wafer W1. On the other hand, the multiple suction pads 32 provided on the third holding unit 30 suction the central portion of the non-bonding surface W1n of the upper wafer W1. With this configuration, the upper wafer W1 after peeling can be horizontally suction-held by the third holding unit 30.

As shown in FIG. 7, the suction pad 32 of the third holding part 30 is formed with a smaller suction area than the suction pad 122 of the first holding part 10. This is to reduce the consumption of the intake device 324 connected to the suction pad 32 of the third holding part 30 and to extend the suction time by the suction pad 32.

Next, the configuration of the upper holding part 61 of the second transfer device 6 and the positional relationship between the upper holding part 61, the third holding part 30, and the upper wafer W1 will be described with reference to FIG. 9. FIG. 9 is a schematic plan view showing an example of the configuration of the upper holding part 61 of the second transfer device 6.

The upper holding part 61 has a plurality of suction parts 611 on its underside. The plurality of suction parts 611 are connected by a single suction pipe 612, which is connected to an air intake device (not shown). The upper holding part 61 suctions and holds the upper wafer W1 from the non-bonding surface W1n (upper surface side) with the plurality of suction parts 611 by the suction force generated by the air intake device. This configuration can reduce the possibility of contact between the bonding surface W1j of the upper wafer W1 and the upper holding part 61.

As shown in FIG. 9, the upper holding part 61 is positioned so as not to overlap with the third holding part 30 in a plan view. With this configuration, the upper holding part 61 can suction-hold the non-bonding surface W1n of the upper wafer W1 while the third holding part 30 suction-holds the non-bonding surface W1n of the upper wafer W1, so that the upper wafer W1 can be transferred smoothly.

Next, an example of the operation of the stripping system 100 will be specifically described with reference to FIG. 10. FIG. 10 is a flowchart showing the processing steps executed by the stripping system 100 according to the first embodiment. Also, FIGS. 11 to 22 are schematic diagrams showing an example of the operation of the stripping system 100 according to the first embodiment. Note that each processing step shown in FIG. 10 is executed according to the control of the control device 8.

First, the loading process of the laminated substrate T is performed (step S101). Specifically, the control unit 81 controls the second transfer device 6 to transfer the laminated substrate T from the first transfer unit 25 to the peeling device 7. Then, the control unit 81 controls the second transfer device 6 to place the laminated substrate T on the multiple lift pins 29 (see FIG. 18) that are protruding from the suction surface 201 of the second holding unit 20. Then, the control unit 81 lowers the multiple lift pins 29 to place the laminated substrate T on the suction surface 201. Then, the control unit 81 adsorbs and holds the laminated substrate T by adsorbing the non-bonding surface W2n (see FIG. 3) of the lower wafer W2 to the suction surface 201 (see FIG. 11).

Then, a peeling inducement process is performed (step S102). Specifically, the control unit 81 raises the main body 21 of the second holding unit 20 to the peeling position (see FIG. 12). Thereafter, the control unit 81 controls the peeling inducement unit 40 to move the blade 41 in the horizontal direction (positive Y-axis direction). Thereafter, the control unit 81 controls the peeling inducement unit 40 to press the sharp member 41a of the blade 41 against the side of the laminated substrate T, and inserts the sharp member 41a into the joint between the upper wafer W1 and the lower wafer W2 in the laminated substrate T. That is, the control unit 81 presses the sharp member 41a against the side of the laminated substrate T located near the suction unit 12 arranged on the negative Y-axis side. At this time, the control unit 81 lowers the main body 21 of the second holding unit 20 in parallel with the pressing process of the sharp member 41a (see FIG. 13).

Next, a peeling process is performed (step S103). Specifically, the control unit 81 lowers the suction pad 122 of the first holding unit 10 to the vicinity of the upper wafer W1. Thereafter, the control unit 81 causes the suction pad 122 of the first holding unit 10 to suction the non-bonding surface W1n of the upper wafer W1 (see FIG. 14). Thereafter, the control unit 81 controls the lifting mechanism 50 to move a part of the outer periphery of the first holding unit 10, specifically, the extension part 112 located on the Y-axis negative direction side, in a direction away from the second holding unit 20 (see FIG. 15). As a result, the suction part 12 located near the part where the sharp member 41a is inserted is pulled upward, and the upper wafer W1 begins to peel off from the laminated substrate T starting from the part where the blade part 41 is inserted.

Then, the control unit 81 controls the lifting mechanism 50 to move the extension portion 112 located on the Y-axis positive side of the elastic member 11 of the first holding unit 10 in a direction away from the second holding unit 20 (see FIG. 16). As a result, peeling progresses continuously from the end of the upper wafer W1 on the Y-axis negative side toward the end on the Y-axis positive side, and eventually the upper wafer W1 is peeled off from the laminated substrate T (see FIG. 17). This completes the series of peeling processes.

As described above, the control unit 81 holds the laminated substrate T with the first holding unit 10 and the second holding unit 20, and controls the lifting mechanism 50 to move the upper wafer W1 held by the first holding unit 10 in a direction away from the lower wafer W2. Through this process, the upper wafer W1 can be peeled off from the laminated substrate T.

Then, the lower wafer W2 after peeling is unloaded (step S104). Specifically, the control unit 81 releases the suction hold by the second holding unit 20 and raises the multiple lift pins 29 supporting the lower wafer W2 to the transfer position. The control unit 81 then controls the second transfer device 6 (see FIG. 1) to unload the lower wafer W2 after peeling from the peeling device 7 and transfer it to the second transfer unit 26 (see FIG. 2) of the transfer station 2. At this time, the lower holding unit 62 of the second transfer device 6 suction-holds the non-bonding surface W2n of the lower wafer W2. The lower wafer W2 is then unloaded from the second transfer unit 26 by the first transfer device 5 and stored in the cassette C2 (see FIG. 1) of the transfer station 1.

Then, the upper wafer W1 after peeling is changed over (step S105). Specifically, the control unit 81 controls the lifting mechanism 34 to lower the suction pad 32 of the third holding unit 30 to the vicinity of the upper wafer W1. Thereafter, the control unit 81 causes the suction pad 32 of the third holding unit 30 to suction the non-bonding surface W1n of the upper wafer W1 (see FIG. 19).

Next, a process of determining whether the transfer is complete is performed (step S106). Specifically, the control unit 81 determines whether the transfer of the upper wafer W1 from the first holding unit 10 to the third holding unit 30 is complete based on the electrical signal input from the suction detection unit 322. Specifically, the control unit 81 determines that the transfer is complete when the intake pressure detected by the suction detection unit 322 exceeds the threshold value. When the control unit 81 determines that the transfer is complete (step S106, Yes), it releases the suction of the upper wafer W1 by the suction pad 122 of the first holding unit 10. As a result, the upper wafer W1 is held by suction on the suction pad 32 of the third holding unit 30. Thereafter, the control unit 81 lowers the suction pad 32 of the third holding unit 30 to the transfer position of the second transfer device 6 (see FIG. 20). On the other hand, when the transfer is not complete (step S106, No), the control unit 81 returns the process to step S105.

Next, the upper wafer W1 after peeling is unloaded (step S107). Specifically, the control unit 81 controls the second transfer device 6 to unload the upper wafer W1 after peeling from the peeling device 7. Here, the upper wafer W1 after peeling is held by the third holding unit 30 on the non-bonding surface W1n side, and the upper holding unit 61 of the second transfer device 6 suction-holds the non-bonding surface W1n of the upper wafer W1 (see FIG. 9 and FIG. 21). In this way, the third holding unit 30 also functions as a transfer unit that transfers the upper wafer W1 after peeling to the second transfer device 6. In the first embodiment, the suction pad 32 of the third holding unit 30 suctions the vicinity of the center of the upper wafer W1, so that the upper wafer W1 after peeling can be stably held.

Then, the control unit 81 controls the second transfer device 6 to transfer the peeled upper wafer W1 out of the peeling device 7 and to the transfer unit 27 with an inversion mechanism of the transfer station 2. The control unit 81 then controls the inversion mechanism to invert the peeled upper wafer W1. As a result, the peeled upper wafer W1 is in a state in which the bonding surface W1j faces upward. The upper wafer W1 is then transferred out of the transfer unit 27 with an inversion mechanism by the first transfer device 5 and stored in the cassette C1 (see FIG. 1) of the transfer station 1. The control unit 81 also controls the lifting mechanism 34 to lift the main body 31, thereby returning the third holder 30 to its initial position (FIG. 22).

As described above, the control unit 81 controls the lifting mechanisms 34 and 50 to transfer the peeled upper wafer W1 from the first holding unit 10 to the third holding unit 30, and then controls the second transfer device 6 to adsorb and hold the non-bonding surface W1n of the upper wafer W1 held by the third holding unit 30 to the upper holding unit 61 of the second transfer device 6. This process allows the upper wafer W1 to be kept horizontal.

Second Embodiment
In the above-described first embodiment, an example has been described in which the third holding unit 30 includes the contact portion 33 for stably holding the upper wafer W1. However, the present invention is not limited to this, and the contact portion 33 may be provided on the support body 60. Fig. 23 is a schematic side view showing a configuration example of the peeling device 7 according to the second embodiment. Fig. 24 is a schematic plan view showing the positional relationship between the suction pad 32, the contact portion 33, and the upper wafer W1 of the third holding unit 30 according to the second embodiment.

The suction pad 32 of the third holding part 30 is provided on the lower part of the main body part 31. As shown in FIG. 24, the suction pad 32 suctions the center of the non-bonding surface W1n of the upper wafer W1.

Multiple (four in this example) contact portions 33 are provided on the lower part of the support 60. The multiple contact portions 33 are arranged concentrically in a plan view and contact the outer periphery of the non-bonding surface W1n of the upper wafer W1.

With this configuration, even if the third holding part 30 has only one suction pad 32, multiple contact parts 33 are arranged on the outer periphery of the upper wafer W1, preventing vibration and rattling and keeping the upper wafer W1 horizontal.

(Modifications of the First and Second Embodiments)
In the above-described first and second embodiments, an example has been described in which the suction unit 12 of the first holding unit 10 and the suction pad 32 of the third holding unit 30 are connected to suction devices 124, 324 such as vacuum pumps via suction pipes 123, 321, respectively. However, the present invention is not limited to this, and a vacuum buffer tank may be provided in the suction paths of the suction unit 12 of the first holding unit 10 and the suction pad 32 of the third holding unit 30. Such a vacuum buffer tank can be utilized in the event of an emergency such as a power outage, and can improve the stability of the factory.

In the above-described embodiment, the peeling system 100 includes a transfer section 27 with an inversion mechanism, and the inversion mechanism is used to invert the front and back of the upper wafer W1 after peeling. This is not limiting, and the second transfer device 6 may include an inversion mechanism. The inversion mechanism of the second transfer device 6 inverts the upper holding section 61 to invert the front and back of the upper wafer W1 after peeling.

In this case, in the process of removing the upper wafer W1 after peeling (steps S106 and S107 in FIG. 10), the control unit 81 controls the second transfer device 6 to adsorb and hold the non-bonding surface W1n of the upper wafer W1 held by the third holding unit 30 to the upper holding unit 61. Thereafter, the control unit 81 controls the reversing mechanism of the second transfer device 6 to reverse the upper holding unit 61, thereby reversing the front and back of the upper wafer W1 after peeling.

Third Embodiment
The delamination device 7 may include a detection unit that detects the upper wafer W1. The delamination device 7 may use the detection unit to detect cracks in the upper wafer W1 after the delamination process.

Below, an example of the configuration of the detection unit described above will be described with reference to Figures 25 and 26. Figure 25 is a schematic plan view showing the positional relationship of the upper wafer W1, the suction unit 12 of the first holding unit 10, the blade portion 41 of the peeling inducer 40, and the multiple detection units 70A-70C according to the third embodiment. Figure 26 is a schematic side view showing the positional relationship of the upper wafer W1 after peeling, the lower wafer W2 after peeling, the suction unit 12 of the first holding unit 10, the blade portion 41 of the peeling inducer 40, and the multiple detection units 70A-70C according to the third embodiment.

The detection units 70A to 70C are, for example, photoelectric sensors. As shown in Figures 25 and 26, each of the detection units 70A to 70C includes a light-projecting unit 71 that projects light and a light-receiving unit 72 that receives the light from the light-projecting unit 71. Note that in Figures 25 and 26, the optical axis of the light projected from the light-projecting unit 71 is indicated by a dashed line. Here, an example is shown in which the detection units 70A to 70C are transmission-type photoelectric sensors, but the detection units 70A to 70C may also be reflection-type photoelectric sensors. In this case, it is sufficient that the detection units 70A to 70C include a sensor that projects and receives light, and a reflecting unit that reflects the light projected from the sensor.

One of the light-projecting unit 71 and the light-receiving unit 72 is disposed above the upper wafer W1, and the other is disposed below the upper wafer W1. For example, as shown in FIG. 26, the light-projecting unit 71 is disposed above the upper wafer W1 and the lower wafer W2, and the light-receiving unit 72 is disposed below the upper wafer W1 and the lower wafer W2.

The light projecting unit 71 projects light toward the outer periphery of the upper wafer W1 after peeling, which is located on the end point side of peeling (positive Y-axis direction side). Specifically, the light projecting unit 71 of the detection unit 70A projects light toward the outer periphery P1 of the outer periphery of the upper wafer W1 after peeling, which is located on the furthest end point side of peeling (positive Y-axis direction side). In the plan view shown in FIG. 25, the outer periphery P1 is a portion of the outer periphery of the upper wafer W1 that is located directly opposite the portion (peeling start portion) with which the blade portion 41 comes into contact across the center of the upper wafer W1. In other words, in the plan view shown in FIG. 25, the portion of the outer periphery of the upper wafer W1 that is located on the furthest Y-axis negative side is the peeling start portion, and the portion of the outer periphery P1 is located on the furthest Y-axis positive side.

The light projecting unit 71 of the detection unit 70B projects light toward the outer periphery P2 of the upper wafer W1 after peeling, which is located on the Y-axis positive side of the suction unit 12 located at the end of the peeling. Similarly to the light projecting unit 71 of the detection unit 70B, the light projecting unit 71 of the detection unit 70C also projects light toward the outer periphery P3 of the upper wafer W1 after peeling, which is located on the Y-axis positive side of the suction unit 12 located at the end of the peeling. In this way, each of the light projecting units 71 of the detection units 70A to 70C projects light in a direction blocked by the upper wafer W1 after peeling. Specifically, each of the light projecting units 71 projects light in a direction blocked by the upper wafer W1 after peeling at the time when the peeling process of step S103 shown in FIG. 10 is completed (see FIG. 17).

As shown in FIG. 26, the light receiving unit 72 is disposed below the upper wafer W1 and the lower wafer W2. When the light receiving unit 72 receives light from the light projecting unit 71, it transmits a signal indicating that the light has been received to the control device 8. Note that the arrangement of the light projecting unit 71 and the light receiving unit 72 may be reversed. In other words, the light projecting unit 71 may be disposed below the upper wafer W1 and the lower wafer W2, and the light receiving unit 72 may be disposed above the upper wafer W1 and the lower wafer W2.

The optical axis of the light traveling from the light projector 71 to the light receiver 72 is inclined with respect to the plate surface of the upper wafer W1. This allows the peeling device 7 to detect cracks in the upper wafer W1 after peeling using the detectors 70A-70C, as described below.

Next, the process in which the control unit 81 detects cracks in the upper wafer W1 after peeling using the above-mentioned detection units 70A to 70C will be described with reference to Figures 27 and 28. Figures 27 and 28 are schematic plan views showing the relationship between the upper wafer W1 with a crack and the detection units 70A to 70C. Note that in Figures 27 and 28, the light projected from the light projecting unit 71 is shown by a solid line.

The crack detection process for the upper wafer W1 is performed after the peeling process is completed (after step S103 in FIG. 10). The control unit 81 detects a crack in the upper wafer W1 based on the detection results of the detection units 70A to 70C. Specifically, the control unit 81 determines that there is a crack in the upper wafer W1 when light is received by any of the light receiving units 72 of the multiple detection units 70A to 70C (see FIG. 27 and FIG. 28). On the other hand, the control unit 81 determines that there is no crack in the upper wafer W1 when light is not received by all of the light receiving units 72 of the multiple detection units 70A to 70C. In this way, the control unit 81 detects a crack in the upper wafer W1 when the light projected from the light projecting unit 71 is received by the light receiving unit 72 after the peeling operation.

For example, in the example shown in FIG. 27, the light projected from the light-projecting units 71 of the detection units 70B and 70C is blocked by the peeled upper wafer W1. On the other hand, the light projected from the light-projecting unit 71 of the detection unit 70A is received by the light-receiving unit 72 of the detection unit 70A. In this case, the control unit 81 determines that the outer periphery P1 (see FIG. 25) of the peeled upper wafer W1 is cracked.

In the example shown in FIG. 28, all of the light projected from the light-projecting units 71 of the detection units 70A-70C is received by the corresponding light-receiving units 72. In this case, the control unit 81 determines that the outer periphery P1-P3 of the upper wafer W1 after peeling is cracked. In this way, by being equipped with multiple detection units 70A-70C, the peeling device 7 can estimate the scale of the crack that has occurred in the upper wafer W1 after peeling.

As described above, the detection units 70A to 70C according to the third embodiment can detect cracks in the upper wafer W1 after the peeling operation. Also, as shown in FIGS. 27 and 28, even if the outer periphery of the upper wafer W1 is cracked on the Y-axis positive side of the suction unit 12 located at the end point side of the peeling (Y-axis positive side), the crack in the upper wafer W1 can be detected. In other words, a crack in the other end of the upper wafer W1 can be detected.

Note that, although an example in which three detectors 70A to 70C are provided for the peeling device 7 has been shown here, the number of detectors provided for the peeling device 7 is not limited to three. The peeling device 7 according to the third embodiment only needs to include at least one detector.

Fourth Embodiment
In the above-described third embodiment, the example in which the crack in the upper wafer W1 is detected after the separation process has been described. However, the present invention is not limited to this, and the crack in the upper wafer W1 may be detected during the separation process.

Below, an example of the configuration of the detection unit that detects the upper wafer W1 during the peeling process will be described with reference to Figures 29 and 30. Figure 29 is a schematic plan view showing the positional relationship between the upper wafer W1, the suction unit 12 of the first holding unit 10, the blade portion 41 of the peeling inducer 40, and the detection unit 70D according to the fourth embodiment. Figure 30 is a schematic side view showing the positional relationship between the laminated substrate T, the suction unit 12 of the first holding unit 10, and the detection unit 70D according to the fourth embodiment.

The detection unit 70D is, for example, a photoelectric sensor. As shown in Figs. 29 and 30, the detection unit 70D includes a light-emitter/receiver unit 73 that emits and receives light, and a reflector unit 74 that reflects the light from the light-emitter/receiver unit 73. Note that in Figs. 29 and 30, the light emitted by the light-emitter/receiver unit 73 is indicated by a dashed line. Here, an example is shown in which the detection unit 70D is a reflective photoelectric sensor, but the detection unit 70D may also be a transmissive photoelectric sensor. In this case, the detection unit 70D only needs to include a light-emitter unit that emits light, and a light-receiving unit that receives the light emitted by the light-emitter unit.

As shown in FIG. 30, the light projecting and receiving unit 73 and the reflecting unit 74 are positioned at a position shifted from the plate surface on the upper wafer W1 side of the laminated substrate T in the direction in which the upper wafer W1 is moved by the first holding unit 10 (positive direction of the X-axis). The light projecting and receiving unit 73 is positioned on one end side of the laminated substrate T. The light projecting and receiving unit 73 projects light parallel to the bonding surface between the upper wafer W1 and the lower wafer W2 in the laminated substrate T, and receives the light reflected from the reflecting unit 74. The reflecting unit 74 is positioned on the other end side of the laminated substrate T. The reflecting unit 74 reflects the light projected from the light projecting and receiving unit 73.

Here, an example is shown in which the light projecting and receiving unit 73 is arranged on one end side of the laminated substrate T, and the reflecting unit 74 is arranged on the other end side. This is not limiting, and the reflecting unit 74 may be arranged on one end side of the laminated substrate T, and the light projecting and receiving unit 73 may be arranged on the other end side.

Next, the process in which the control unit 81 uses the above-mentioned detection unit 70D to detect cracks in the upper wafer W1 during the peeling process will be described with reference to Figs. 31 to 33. Figs. 31 and 32 are schematic side views showing an example of the relationship between the upper wafer W1 and the detection unit 70D under normal conditions. Fig. 33 is a schematic side view showing an example of the relationship between the upper wafer W1 and the detection unit 70D when the upper wafer W1 is cracked during the peeling operation.

The crack detection process for the upper wafer W1 is performed in parallel with the peeling process (step S103 in FIG. 10). In other words, the crack detection process for the upper wafer W1 is performed during the peeling operation. The control unit 81 detects the crack of the upper wafer W1 based on the detection result of the detection unit 70D. Specifically, first, before the peeling process starts, when the light projecting and receiving unit 73 projects light, the reflecting unit 74 reflects the light from the light projecting and receiving unit 73, the light projecting and receiving unit 73 receives the reflected light, and transmits a signal indicating that the light has been received to the control unit 81. After that, when the control unit 81 controls the lifting mechanism 50 to start the peeling process in which a part of the outer periphery of the first holding unit 10 is moved in a direction away from the second holding unit 20, the light from the light projecting and receiving unit 73 is blocked by the upper wafer W1 being peeled, the reflecting unit 74 cannot reflect the light to the light projecting and receiving unit 73, and the light projecting and receiving unit 73 transmits a signal indicating that the light is not being received to the control unit 81 (see FIG. 31). Thereafter, when the peeling process is completed, when the light projecting/receiving unit 73 projects light, the reflecting unit 74 reflects the light from the light projecting/receiving unit 73, receives the reflected light from the light projecting/receiving unit 73, and transmits a signal indicating that the light has been received to the control unit 81 (see FIG. 32).

In other words, if the control unit 81 does not receive a signal indicating that light has been received from the light projecting and receiving unit 73 during the period from when the peeling operation is started and a signal indicating that no light has been received from the light projecting and receiving unit 73 until the timing predetermined for the completion of the peeling operation arrives, the control unit 81 determines that there is no crack in the upper wafer W1.

On the other hand, as shown in FIG. 33, suppose that a crack occurs in the upper wafer W1 during the peeling operation. For convenience, hereinafter, the portion of the cracked upper wafer W1 that has been peeled off from the lower wafer W2 will be referred to as the "upper wafer W1a," and the portion that is still bonded to the lower wafer W2 will be referred to as the "upper wafer W1b." In addition, the laminated substrate with the upper wafer W1b remaining will be referred to as the "laminated substrate T'."

As shown in FIG. 33, if a crack occurs in the upper wafer W1 during the peeling operation, the light projected from the light projecting/receiving unit 73 of the detection unit 70D will reach the reflecting unit 74 before the timing predetermined for the completion of the peeling operation arrives. In other words, the light projecting/receiving unit 73 of the detection unit 70D will receive the light reflected by the reflecting unit 74 before the timing predetermined for the completion of the peeling operation arrives.

In this way, after the peeling operation is started and the light from the light projecting and receiving unit 73 is no longer received by the light projecting and receiving unit 73, if light is received by the light projecting and receiving unit 73 before the timing predetermined for the completion of the peeling operation arrives, the control unit 81 determines that a crack has occurred in the upper wafer W1. This allows the peeling device 7 according to the fourth embodiment to detect a crack in the upper wafer W1 during the peeling operation.

The peeling device 7 may be equipped with both the detection units 70A to 70C according to the third embodiment and the detection unit 70D according to the fourth embodiment.

Fifth Embodiment
In the fifth embodiment, the recovery process of the broken upper wafer W1 in the third and fourth embodiments will be described with reference to Fig. 34 to Fig. 37. Fig. 34 to Fig. 37 are diagrams showing an operation example of the recovery process according to the fifth embodiment.

The following process is performed when the control unit 81 detects a crack in the upper wafer W1 during the crack detection process of the third and fourth embodiments.

First, a rotation process is performed on the laminated substrate T. Specifically, the control unit 81 controls the rotary lift mechanism 23 to rotate the laminated substrate T so that the side surface of the other end (positive Y-axis direction side) of the laminated substrate T on which the upper wafer W1 remains faces the peeling inducement unit 40 (see FIG. 34).

Next, a peeling induction process is performed. The control unit 81 performs a process similar to step S102 in FIG. 10 (see FIGS. 35 and 36). As a result, a peeling initiation site is formed in the laminated substrate T, which serves as a trigger for peeling the upper wafer W1 from the lower wafer W2.

Next, a peeling process is performed. The control unit 81 performs a process similar to step S103 in FIG. 10 (see FIG. 37). As a result, the upper wafer W1b remaining on the laminated substrate T' is peeled off from the lower wafer W2.

As described above, when the control unit 81 detects a crack at the other end of the upper wafer W1, it controls the rotation and lifting mechanism 23 to rotate the laminated substrate T so that the side of the other end (positive Y-axis direction side) of the laminated substrate T on which the other end of the upper wafer W1 remains faces the peeling inducement unit 40, and then controls the peeling inducement unit 40 to form a peeling start site on the side of the other end of the laminated substrate T, and then controls the first holding unit 10 to move the other end of the upper wafer W1 in a direction away from the lower wafer W2.

According to this process, if it is determined that the upper wafer W1 is cracked during or after the peeling operation, the upper wafer W1b remaining on the laminated substrate T can be recovered from the laminated substrate T. In addition, since the upper wafer W1b can be removed from the lower wafer W2, the lower wafer W2 can be easily reused.

Sixth Embodiment
Fig. 38 is a schematic side view showing a configuration example of the delamination apparatus 7 according to the sixth embodiment. Fig. 39 is a schematic plan view of a receiving part 75 according to the sixth embodiment. As shown in Figs. 38 and 39, the delamination apparatus 7 may include a receiving part 75 that receives fragments of the upper wafer W1.

The receiving portion 75 is a container that receives fragments of the upper wafer W1. The receiving portion 75 is located, for example, below the first holding portion 10. As shown in Figures 38 and 39, the receiving portion 75 may be provided along the outer periphery of the second holding portion 20. If the upper wafer W1 breaks during or after the peeling operation, the receiving portion 35 can receive such fragments of the upper wafer W1. The receiving portion 75 may be detachable from the second holding portion 20, for example. In this case, it is easy to collect the fragments of the upper wafer W1.

The position where the receiving portion 75 is provided is not limited to the position shown in Figures 38 and 39. For example, the receiving portion 75 may be provided below the second holding portion 20.

Seventh Embodiment
Fig. 40 is a schematic side view showing a configuration example of the peeling device 7 according to the seventh embodiment. Fig. 41 is a schematic perspective view showing a configuration example of the peeling device 7 according to the seventh embodiment. As shown in Figs. 40 and 41 , the peeling device 7 may include a suction unit 83 that sucks up the adhesion of the peeling inducing unit 40.

The suction unit 83 sucks in the atmosphere around the peeling inducement unit 40. The suction unit 83 is equipped with a suction pipe 831 and an air intake device 832. One end of the suction pipe 831 is connected to the receiving unit 84 described below, and the other end is connected to the air intake device 832. The suction unit 83 sucks in the atmosphere around the peeling inducement unit 40 by the suction force generated by the air intake device 832. This allows the suction unit 83 to remove any attachments that have adhered to the sharp member 41a of the peeling inducement unit 40.

As shown in FIG. 41, the peeling device 7 may further include a receiving section 84, an imaging section 85, and an irradiation section 86. The receiving section 84 is disposed below the peeling inducement section 40 and receives the attachment attached to the sharp member 41a of the peeling inducement section 40. The receiving section 84 has an opening 842 at the top and a lid section 843 that covers a part of the receiving section 84. A connection section 841 that connects to the suction pipe 831 is provided on the side of the receiving section 84. The receiving section 84 is connected to the suction device 832 via the suction pipe 831. The suction section 83 sucks the atmosphere around the peeling inducement section 40 through the receiving section 84 by the suction force generated by the suction device 832. As a result, the attachment on the sharp member 41a of the peeling inducement section 40 is sucked. That is, the opening 842 of the receiving section 84 also functions as a suction port of the suction section 83, and the lid section 843 also functions as an adjustment section that adjusts the suction range and suction position of the suction section 83.

The imaging unit 85 is disposed below the peeling inducement unit 40, and captures an image of the cutting edge of the sharp member 41a of the peeling inducement unit 40. The control unit 81 checks the state of the sharp member 41a of the peeling inducement unit 40 based on the imaging data from the imaging unit 85. The irradiation unit 86 is, for example, an LED light, and irradiates light onto the imaging target of the imaging unit 85 (here, the peeling inducement unit 40). The irradiation unit 86 is disposed above the peeling inducement unit 40.

The specific procedure for the adhering matter suction process using the suction unit 83 will be described below with reference to Figs. 42 to 44. Fig. 42 is a flowchart showing the procedure for the adhering matter suction process of the peeling device 7 according to the seventh embodiment. Figs. 43 and 44 are diagrams showing an example of the operation of the peeling device 7 according to the seventh embodiment. Note that the process procedure shown in Fig. 42 is performed, for example, after step S107 shown in Fig. 10, that is, after the upper wafer W1 and the lower wafer W2 are unloaded from the peeling device 7.

As shown in FIG. 43, the control unit 81 performs a cutting edge confirmation process (step S201). Specifically, the control unit 81 controls the movement mechanism 42 of the peeling inducement unit 40 to position the peeling inducement unit 40 at a first position where the cutting edge of the sharp member 41a is located directly above the imaging unit 85. The control unit 81 then uses the imaging unit 85 to capture an image of the cutting edge of the sharp member 41a and confirms the condition of the cutting edge (for example, whether or not there is a chip in the blade) (see FIG. 43).

The control unit 81 then performs a foreign object collection process (step S202). Specifically, the control unit 81 controls the movement mechanism 42 of the peeling inducement unit 40 to move the blade unit 41 in the horizontal direction (here, the negative Y-axis direction) and position the peeling inducement unit 40 at a second position where the sharp member 41a is located directly above the opening 842 (see FIG. 41) in the receiving unit 84. The control unit 81 then controls the suction unit 83 to suck in the atmosphere around the peeling inducement unit 40.

As described above, the control unit 81 controls the moving mechanism 42 to place the sharp member 41a in the first position, controls the imaging unit 85 to capture an image of the cutting edge of the sharp member 41a, and controls the moving mechanism 42 to place the sharp member 41a in the second position, and controls the suction unit 83 to suck in the atmosphere around the peeling inducement unit 40. This process makes it possible to remove any adhesions on the sharp member 41a.

Eighth embodiment
45 is a schematic plan view showing a configuration example of a separation device according to an eighth embodiment. As shown in FIG. 45, the separation device 7 may include a blowing unit 87 that blows gas to the sharp member 41a of the separation inducing unit 40.

The ejection unit 87 ejects gas such as air or an inert gas toward the peeling inducement unit 40. As shown in FIG. 45, the ejection unit 87 is connected to a gas supply source 873 and a valve 872 via a supply path 871. When the control unit 81 ejects gas from the ejection unit 87, any material adhering to the sharp member 41a falls downward. The material that has fallen downward is received by the receiving unit 84 and sucked up by the suction unit 83.

This configuration makes it possible to remove any deposits on the peeling inducement section 40.

Ninth embodiment
46 is a schematic plan view showing a configuration example of the peeling device 7 according to the ninth embodiment. As shown in FIG. 46, the peeling device 7 may include a remover 88 that removes deposits from the sharp member 41a of the peeling inducer 40.

The removal unit 88 removes the deposits by physically contacting the sharp member 41a of the peeling inducement unit 40. For example, the removal unit 88 may include a roller 881 and a moving mechanism 882. The roller 881 is rotatable around a rotation axis extending in a direction (Y-axis direction) perpendicular to the extension direction (X-axis direction) of the cutting edge of the sharp member 41a. The roller 881 is a contact unit that contacts the upper surface of the sharp member 41a of the peeling inducement unit 40. The moving mechanism 882 moves the roller 881 along the extension direction (X-axis direction) of the cutting edge of the sharp member 41a.

The process of removing adhesions using the removal unit 88 will be described below. The control unit 81 controls the movement mechanism 882 to move the roller 881 horizontally (here, in the X-axis direction) along the top surface of the sharp member 41a of the peeling inducement unit 40. As a result, adhesions on the top surface of the sharp member 41a come into contact with the roller 881, are pushed out by the roller 881, and fall downward. The adhesions that have fallen downward are received by the receiving unit 84 and sucked up by the suction unit 83.

This configuration makes it possible to remove any deposits on the peeling inducement section 40.

Tenth embodiment
47 and 48 are schematic perspective views showing a configuration example of the peeling device 7 according to the tenth embodiment. As shown in Fig. 47, the remover 89 is a curtain-shaped contact portion, and is provided, for example, directly above the opening 842 of the receiving portion 84. As shown in Fig. 48, the lower part of the remover 89 comes into contact with the upper surface of the sharp member 41a.

The process of removing the adhesion using the removal unit 89 will be described below with reference to Figures 47 and 48. The process of removing the adhesion begins with the lower part of the removal unit 89 in contact with the upper surface of the sharp member 41a of the peeling inducement unit 40, as shown in Figure 47.

The control unit 81 controls the movement mechanism 42 to move the blade portion 41 of the peeling inducement unit 40 in the negative direction of the Y axis. As a result, any deposits on the upper surface of the sharp member 41a of the blade portion 41 are scraped up by the removal unit 89. Thereafter, when the blade portion 41 moves further in the negative direction of the Y axis and the sharp member 41a separates from the removal unit 89 (see FIG. 48), the deposits held back by the removal unit 89 fall downward. The deposits that have fallen downward are received by the receiving unit 84 and sucked up by the suction unit 83.

This configuration makes it possible to remove any deposits on the peeling inducement section 40.

As described above, the peeling system according to the embodiment (for example, the peeling system 100) includes a peeling device (for example, the peeling device 7) and a transport device (for example, the second transport device 6). The peeling device peels an overlapping substrate in which a first substrate (for example, the upper wafer W1) and a second substrate (for example, the lower wafer W2) are bonded together into a first substrate and a second substrate. The transport device receives the first substrate from the peeling device and transports the first substrate. The peeling device includes a first holding unit and a second holding unit. The first holding unit adsorbs and holds the non-bonded surface of the first substrate in the overlapping substrate. The second holding unit adsorbs and holds the non-bonded surface of the second substrate in the overlapping substrate. The transport device adsorbs and holds the non-bonded surface of the first substrate in the overlapping substrate and transports the first substrate.

Therefore, the peeling system according to the embodiment can reduce the possibility of contacting the bonding surface when transporting the peeled substrate.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

5 First conveying device 6 Second conveying device 7 Peeling device 8 Control device 10 First holding section 12 Suction section 20 Second holding section 21 Main body section 23 Rotation and lifting mechanism 30 Third holding section 31 Main body section 32 Suction pad 33 Contact section 34 Lifting mechanism 40 Peeling inducer section 41 Blade section 42 Movement mechanism 43 Lifting mechanism 50 Lifting mechanism 52 Movement mechanism 60 Support body 61 Upper holding sections 70A to 70D Detection section 71 Light projecting section 72 Light receiving section 73 Light projecting and receiving section 74 Reflection section 81 Control section 82 Memory section 83 Suction section 100 Peeling system 122 Suction pad 322 Suction detection section

Claims (7)

a peeling device that peels a laminated substrate formed by bonding a first substrate and a second substrate into the first substrate and the second substrate;
a transport device that receives the first substrate after peeling from the peeling device and transports the received first substrate,
The peeling device includes:
a first holding portion that adsorbs and holds a non-bonding surface of the first substrate of the laminated substrate;
a second holding portion that adsorbs and holds a non-bonding surface of the second substrate of the laminated substrate,
The transport device transports the first substrate by suction holding the non-bonding surface of the first substrate after peeling. the peeling device includes a third holding part that adsorbs and holds a non-bonding surface of the first substrate after peeling, the non-bonding surface being held by the first holding part;
The separation system according to claim 1 , wherein the transport device adsorbs and holds a non-bonding surface of the first substrate held by the third holding part. a control unit for controlling the peeling device and the conveying device,
the peeling device includes a lifting mechanism that lifts and lowers the first holding unit and the third holding unit relative to one another,
3. The peeling system according to claim 2, wherein the control unit controls the lifting mechanism to transfer the first substrate after peeling from the first holding unit to the third holding unit, and then controls the transport device to adsorb and hold the non-bonding surface of the first substrate held by the third holding unit to the transport device. the peeling device includes a suction detection unit that detects suction of the first substrate by the third holding unit,
The peeling system according to claim 3 , wherein the control unit determines whether or not transfer of the first substrate from the first holding unit to the third holding unit has been completed based on an electrical signal input from the suction detection unit. a reversing mechanism for reversing the first substrate after peeling,
The peeling system according to claim 3 , wherein the control unit controls the transport device to transport the first substrate after peeling to the inversion mechanism, and then controls the inversion mechanism to invert the first substrate after peeling. the transport device includes an inversion mechanism that inverts the first substrate after peeling,
4. The peeling system according to claim 3, wherein the control unit controls the transport device to adsorb and hold the non-bonding surface of the first substrate held by the third holding unit to the transport device, and then controls the inversion mechanism of the transport device to invert the front and back of the first substrate after peeling. a step of suction-holding a non-bonding surface of the first substrate by using a first holding unit that suction-holds a non-bonding surface of the first substrate in a laminated substrate formed by bonding a first substrate and a second substrate;
a step of suction-holding the non-bonding surface of the second substrate by using a second holding part that suction-holds the non-bonding surface of the second substrate of the laminated substrate;
peeling the laminated substrate into the first substrate and the second substrate using a peeling device;
receiving the first substrate from the peeling device using a transport device;
and using the transport device to adsorb and hold the non-bonding surface of the first substrate after the peeling and transport it.

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