JP2024058185A - 光電変換装置、光電変換装置の駆動方法、半導体基板、機器 - Google Patents

光電変換装置、光電変換装置の駆動方法、半導体基板、機器 Download PDF

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Publication number
JP2024058185A
JP2024058185A JP2022165393A JP2022165393A JP2024058185A JP 2024058185 A JP2024058185 A JP 2024058185A JP 2022165393 A JP2022165393 A JP 2022165393A JP 2022165393 A JP2022165393 A JP 2022165393A JP 2024058185 A JP2024058185 A JP 2024058185A
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Japan
Prior art keywords
well
photoelectric conversion
transistor
potential
conversion device
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Pending
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JP2022165393A
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English (en)
Japanese (ja)
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JP2024058185A5 (enExample
Inventor
真也 市野
Shinya Ichino
秀樹 池戸
Hideki Ikedo
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2022165393A priority Critical patent/JP2024058185A/ja
Priority to US18/483,857 priority patent/US20240136370A1/en
Publication of JP2024058185A publication Critical patent/JP2024058185A/ja
Publication of JP2024058185A5 publication Critical patent/JP2024058185A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022165393A 2022-10-14 2022-10-14 光電変換装置、光電変換装置の駆動方法、半導体基板、機器 Pending JP2024058185A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022165393A JP2024058185A (ja) 2022-10-14 2022-10-14 光電変換装置、光電変換装置の駆動方法、半導体基板、機器
US18/483,857 US20240136370A1 (en) 2022-10-14 2023-10-10 Photoelectric conversion apparatus, method of driving the apparatus, semiconductor substrate, and equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022165393A JP2024058185A (ja) 2022-10-14 2022-10-14 光電変換装置、光電変換装置の駆動方法、半導体基板、機器

Publications (2)

Publication Number Publication Date
JP2024058185A true JP2024058185A (ja) 2024-04-25
JP2024058185A5 JP2024058185A5 (enExample) 2025-10-20

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JP2022165393A Pending JP2024058185A (ja) 2022-10-14 2022-10-14 光電変換装置、光電変換装置の駆動方法、半導体基板、機器

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US (1) US20240136370A1 (enExample)
JP (1) JP2024058185A (enExample)

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Publication number Publication date
US20240136370A1 (en) 2024-04-25

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