JP2024046592A - Substrate processing equipment and substrate processing method - Google Patents

Abstract

[Problem] To provide a substrate processing apparatus capable of reducing regions where bubbles are insufficient on the surface of a substrate and in its vicinity. [Solution] A substrate processing apparatus (100) includes a processing bath (110), a substrate holding part (120), a bubble supply part (135), and a plurality of processing liquid supply parts (An). The substrate holding part (120) immerses a substrate (W) in a processing liquid (LQ) stored in the processing bath (110). The bubble supply part (135) supplies a plurality of bubbles (BB) to the processing liquid (LQ) from below the substrate (W). The processing bath (110) includes a first side wall (116) and a second side wall (117). The plurality of processing liquid supply parts (An) include at least one first processing liquid supply part (An) and at least one second processing liquid supply part (An). The at least one first processing liquid supply part (An) is disposed on the side of the first side wall (116), and supplies the processing liquid (LQ) toward the bubbles (BB). At least one second processing liquid supply unit An is disposed on the side of the second side wall 117, and supplies the processing liquid LQ toward the air bubble BB.

Description

The present invention relates to a substrate processing apparatus and a substrate processing method.

The substrate processing apparatus described in Patent Document 1 includes a substrate holding section, a processing tank, and multiple bubble generating tubes. The substrate holding section holds multiple substrates arranged in a substrate row aligned in a row direction. The processing tank stores a processing liquid in which the substrates held in the substrate holding section are immersed. The multiple bubble supply tubes generate bubbles in the processing liquid by supplying gas to the processing liquid. The flow rate of gas supplied to the end bubble generating tubes located below the ends of the substrate row immersed in the processing liquid is greater than the flow rate of gas supplied to the central bubble generating tube located below the center of the substrate row. This allows the amount of bubbles generated from the central bubble generating tube and the end bubble generating tube to be approximately equal, thereby suppressing uneven processing for each substrate.

JP 2022-73307 A

However, the substrate processing apparatus described in Patent Document 1 merely controls the amount of bubbles. Therefore, depending on the processing conditions, there is a possibility that the distribution of bubbles in the processing liquid may become uneven. As a result, there may be areas on the surface of the substrate immersed in the processing liquid and in its vicinity where there are insufficient bubbles.

The present invention has been made in consideration of the above problems, and its purpose is to provide a substrate processing apparatus and a substrate processing method that can reduce areas where there are insufficient bubbles on the surface of a substrate and in its vicinity.

According to one aspect of the present invention, a substrate processing apparatus includes a processing tank, a substrate holding unit, a bubble supply unit, and a plurality of processing liquid supply units. The processing tank stores a processing liquid. The substrate holding unit holds a substrate and immerses the substrate in the processing liquid stored in the processing tank. The bubble supply unit is disposed in the processing tank and supplies a plurality of bubbles to the processing liquid from below the substrate. The plurality of processing liquid supply units are disposed in the processing tank and supply the processing liquid to the inside of the processing tank. The processing tank includes a first side wall and a second side wall opposed to each other. The plurality of processing liquid supply units include at least one first processing liquid supply unit and at least one second processing liquid supply unit. The at least one first processing liquid supply unit is disposed on the side of the first side wall and supplies the processing liquid toward the bubbles. The at least one second processing liquid supply unit is disposed on the side of the second side wall and supplies the processing liquid toward the bubbles.

In one aspect of the present invention, it is preferable that each of the two or more processing liquid supply units among the plurality of processing liquid supply units belong to at least one group among a plurality of mutually different groups. Preferably, at least one of the processing liquid supply units belongs to each of the plurality of groups. It is preferable that the treatment liquid supply unit belonging to the group supplies the treatment liquid to the bubbles in different periods for each group.

In one aspect of the present invention, it is preferable that the plurality of groups include a first group, a second group, and a third group. Preferably, the first group includes at least one first treatment liquid supply section among the plurality of first treatment liquid supply sections, and does not include the second treatment liquid supply section. Preferably, the second group includes at least one second processing liquid supply section among the plurality of second processing liquid supply sections, and does not include the first processing liquid supply section. The third group includes at least one first processing liquid supply section among the plurality of first processing liquid supply sections and at least one second processing liquid supply section among the plurality of second processing liquid supply sections. It is preferable to include.

In one aspect of the present invention, the substrate processing apparatus preferably further includes a storage section and a control section. Preferably, the storage unit stores a learned model constructed by learning the learning data. Preferably, the control section controls the storage section. Preferably, the learning data includes processing amount information and processing condition information. Preferably, the processing amount information includes information indicating the processing amount of the learning substrate by the learning processing liquid. The processing condition information includes at least information indicating one or more learning processing liquid supply units belonging to each learning group, and information indicating a timing at which each learning group supplies the learning processing liquid. is preferred. Preferably, the control unit inputs input information to the trained model and obtains output information from the trained model. Preferably, the input information includes information indicating a target value of the amount of processing of the substrate by the processing liquid. Preferably, the output information includes at least information indicating one or more of the processing liquid supply units belonging to each group, and information indicating a timing at which each group should supply the processing liquid. Preferably, the control section controls the plurality of processing liquid supply sections based on the output information.

In one aspect of the present invention, the substrate processing apparatus preferably further includes a processing liquid flow rate adjustment section. Preferably, the processing liquid flow rate adjustment section adjusts the supply flow rate of the processing liquid for each processing liquid supply section.

In one aspect of the present invention, it is preferable that the bubble supply section includes a plurality of bubble supply pipes. It is preferable that each of the plurality of bubble supply pipes receives gas supply and supplies the bubbles to the processing liquid. Preferably, the substrate processing apparatus further includes a bubble adjustment section. It is preferable that the bubble adjustment unit adjusts the supply flow rate of the gas for each bubble supply pipe.

In one aspect of the present invention, the treatment liquid is preferably a rinsing liquid. Preferably, the substrate holder immerses the substrate, which has been treated with a chemical solution stored in a chemical tank different from the processing tank, in the rinsing liquid stored in the processing tank.

According to another aspect of the present invention, a substrate processing apparatus includes a rinse tank, a substrate holding unit, a fluid supply unit, and a plurality of rinse liquid supply units. The rinse tank stores a rinse liquid. The substrate holding unit holds a substrate after processing with a chemical liquid stored in a chemical tank separate from the rinse tank, and immerses the substrate in the rinse liquid stored in the rinse tank. The fluid supply unit is disposed in the rinse tank and supplies a fluid to the rinse liquid from below the substrate. The plurality of rinse liquid supply units are disposed in the rinse tank and supply the rinse liquid to the inside of the rinse tank. The rinse tank includes a first side wall and a second side wall facing each other. The plurality of rinse liquid supply units include at least one first rinse liquid supply unit and at least one second rinse liquid supply unit. The first rinse liquid supply unit is disposed on the side of the first side wall and supplies the rinse liquid to the inside of the rinse tank. The second rinse liquid supply unit is disposed on the side of the second side wall and supplies the rinse liquid to the inside of the rinse tank.

According to another aspect of the present invention, a substrate processing method is performed by a substrate processing apparatus including a processing tank and a plurality of processing liquid supply units. The substrate processing method includes a dipping step of immersing the substrate in a processing liquid stored in the processing tank, a bubble supply step of supplying a plurality of bubbles to the processing liquid from below the substrate, and one or more of the above-mentioned bubbles. The method includes a bubble control step of controlling behavior of the bubbles by supplying the treatment liquid toward the bubbles from a treatment liquid supply section. The processing tank includes a first side wall and a second side wall facing each other. The plurality of processing liquid supply sections include at least one first processing liquid supply section and at least one second processing liquid supply section. At least one first treatment liquid supply section is disposed on the side of the first side wall and supplies the treatment liquid toward the bubbles. At least one second processing liquid supply section is disposed on the second side wall and supplies the processing liquid toward the bubbles.

In one aspect of the present invention, it is preferable that each of the two or more processing liquid supply units among the plurality of processing liquid supply units belong to at least one group among a plurality of mutually different groups. Preferably, at least one of the processing liquid supply units belongs to each of the plurality of groups. In the bubble control step, it is preferable that the treatment liquid supply units belonging to the group supply the treatment liquid to the bubbles in different periods for each group.

In one aspect of the present invention, it is preferable that the plurality of groups include a first group, a second group, and a third group. Preferably, the first group includes at least one first treatment liquid supply section among the plurality of first treatment liquid supply sections, and does not include the second treatment liquid supply section. Preferably, the second group includes at least one second processing liquid supply section among the plurality of second processing liquid supply sections, and does not include the first processing liquid supply section. The third group includes at least one first processing liquid supply section among the plurality of first processing liquid supply sections and at least one second processing liquid supply section among the plurality of second processing liquid supply sections. It is preferable to include.

In one aspect of the present invention, the substrate processing method further includes a trained model utilization step of inputting input information to a trained model constructed by learning training data and acquiring output information from the trained model. It is preferable to include. Preferably, the learning data includes processing amount information and processing condition information. Preferably, the processing amount information includes information indicating the processing amount of the learning substrate by the learning processing liquid. The processing condition information includes at least information indicating one or more learning processing liquid supply units belonging to each learning group, and information indicating a timing at which each learning group supplies the learning processing liquid. is preferred. Preferably, the input information includes information indicating a target value of the amount of processing of the substrate by the processing liquid. Preferably, the output information includes at least information indicating one or more of the processing liquid supply units belonging to each group, and information indicating a timing at which each group should supply the processing liquid. In the bubble control step, it is preferable that the plurality of processing liquid supply units be controlled based on the output information.

In one aspect of the present invention, it is preferable that in the bubble control step, the supply flow rate of the processing liquid is adjusted for each processing liquid supply section.

In one aspect of the present invention, the substrate processing apparatus preferably further includes a plurality of bubble supply pipes, each of which receives a supply of gas and supplies the bubbles to the processing liquid. In the bubble supply step, the supply flow rate of the gas is preferably adjusted for each of the bubble supply pipes.

In one aspect of the present invention, the treatment liquid is preferably a rinsing liquid. In the immersion step, it is preferable that the substrate, which has been treated with a chemical solution stored in a chemical tank different from the processing tank, is immersed in the rinsing liquid stored in the processing tank.

According to another aspect of the present invention, a substrate processing method is performed by a substrate processing apparatus including a rinsing tank and a plurality of rinsing liquid supply units. The substrate processing method includes a dipping step of immersing a substrate treated with a chemical solution stored in a chemical solution tank different from the rinsing tank in the rinsing solution stored in the rinsing tank, and a step of immersing the substrate in the rinsing solution from below the substrate. In contrast, the method includes a fluid supplying step of supplying a fluid, and a rinsing solution supplying step of supplying the rinsing solution into the inside of the rinsing tank from one or more of the rinsing solution supply sections. The rinsing tank includes a first side wall and a second side wall facing each other. The plurality of rinse liquid supply units include at least one first rinse liquid supply unit and at least one second rinse liquid supply unit. The first rinsing liquid supply section is disposed on the first side wall and supplies the rinsing liquid into the inside of the rinsing tank. A second rinsing liquid supply section is disposed on the second side wall and supplies the rinsing liquid into the inside of the rinsing tank.

According to the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method that can reduce a region lacking bubbles on the surface of a substrate and in the vicinity thereof.

1 is a schematic cross-sectional view showing a substrate processing apparatus according to a first embodiment of the present invention. 2 is a schematic plan view showing a processing liquid supply section and a bubble supply section according to Embodiment 1. FIG. 4 is a graph showing the relationship between the dissolved oxygen concentration in the treatment liquid and the etching amount according to the first embodiment. 5 is a graph showing the relationship between the bubble supply time and the dissolved oxygen concentration in the treatment liquid according to the first embodiment. FIG. 3 is a diagram showing an example of a table defining groups of processing liquid supply units according to the first embodiment. FIG. 3 is a diagram showing a control sequence when controlling the behavior of bubbles using the first to third groups of processing liquid supply units according to the first embodiment. (a) is a diagram showing a map image showing simulation results of bubble distribution according to a comparative example. (b) is a diagram showing a map image showing a simulation result of bubble distribution according to an example of the present invention. It is a figure which shows the map image which shows the simulation result of the distribution of bubbles in each process based on a present Example. 1A is a plan view showing a substrate for explaining a simulation according to the present embodiment in detail, and FIG. 1B is a side view showing the substrate and a bubble supply pipe for explaining a simulation according to the present embodiment in detail. 3 is a flowchart showing a substrate processing method according to Embodiment 1. FIG. 10 is a flowchart showing a substrate processing method according to a first modified example of the first embodiment. FIG. 13 is a diagram showing a table defining first to fifth groups of processing liquid supply units according to a second modified example of the first embodiment. FIG. 3 is a schematic cross-sectional view showing a substrate processing apparatus according to a third modification of the first embodiment. FIG. 13 is a block diagram showing a control device according to a fourth modified example of the first embodiment. It is a flowchart which shows the substrate processing method concerning the 4th modification. It is a block diagram showing the learning device concerning the 4th modification. It is a flow chart which shows the learning method concerning the 4th modification. 1A to 1C are diagrams illustrating a substrate processing method according to a first reference example. FIG. 7 is a diagram showing a substrate processing method according to a second reference example. 7 is a diagram showing a substrate processing method according to a fifth modification of the first embodiment. FIG. FIG. 2 is a schematic plan view showing a substrate processing apparatus according to Embodiment 2 of the present invention. FIG. 11 is a schematic cross-sectional view showing a second rinsing tank according to a second embodiment. FIG. 3 is a schematic cross-sectional view showing a second chemical tank according to Embodiment 2. 10 is a flowchart showing a substrate processing method according to a second embodiment. 7 is a flowchart showing substrate rinsing processing by the second rinsing tank according to Embodiment 2. FIG. 13 is a flowchart showing a substrate rinsing process in a second rinsing tank according to a modified example of the second embodiment.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that in the drawings, the same or corresponding parts are given the same reference symbols and the description will not be repeated. In addition, in the drawings, the X-axis, Y-axis, and Z-axis are appropriately illustrated to facilitate understanding. The X-axis, Y-axis, and Z-axis are mutually orthogonal, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. Note that "planar view" refers to viewing an object from vertically above.

(Embodiment 1)
A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 10. First, the substrate processing apparatus 100 will be described with reference to Figures 1 and 2. Figure 1 is a schematic cross-sectional view of the substrate processing apparatus 100. The substrate processing apparatus 100 shown in Figure 1 is of a batch type, and processes a plurality of substrates W collectively using a processing liquid LQ. Specifically, the substrate processing apparatus 100 processes a plurality of substrates W constituting a lot collectively. One lot may include, for example, 25 or 50 substrates. The substrate processing apparatus 100 can also process a single substrate W.

In the first embodiment, the substrate W is a semiconductor wafer. The substrate W may be, for example, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. In the first embodiment, the surface of the substrate W refers to the main surface of the substrate W.

The substrate processing apparatus 100 includes a processing tank 110, a substrate holding unit 120, multiple processing liquid supply units An, a processing liquid flow rate adjustment unit 130, a bubble supply unit 135, a bubble adjustment unit 140, and a drainage unit 150. Here, "n" is an integer equal to or greater than 1. The substrate processing apparatus 100 further includes a common pipe P1, multiple supply pipes P2, a common pipe P3, multiple supply pipes P4, and a drainage pipe P5.

The processing tank 110 stores the processing liquid LQ. The processing tank 110 then immerses multiple substrates W in the processing liquid LQ to process the multiple substrates W.

The processing liquid LQ is a chemical liquid or a cleaning liquid (rinsing liquid). The chemical liquid is, for example, an etching liquid. In addition, the chemical solutions include, for example, dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), fluoronitric acid (a mixture of hydrofluoric acid and nitric acid (HNO ₃ )), buffered hydrofluoric acid (BHF), ammonium fluoride, and HFEG (fluorinated nitric acid). (mixture of acid and ethylene glycol), phosphoric acid (H ₃ PO ₄ ), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acids (e.g. citric acid, oxalic acid), organic alkalis (e.g. , TMAH: tetramethylammonium hydroxide), sulfuric acid hydrogen peroxide mixture (SPM), ammonia hydrogen peroxide mixture (SC1), hydrochloric acid hydrogen peroxide mixture (SC2), isopropyl alcohol (IPA), interface It is an activator, a corrosion inhibitor, or a hydrophobizing agent.

The cleaning liquid (rinsing liquid) is, for example, deionized water, carbonated water, electrolytic ionized water, hydrogen water, ozone water, or hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm). The cleaning liquid (rinsing liquid) is a liquid for washing away chemical liquids, by-products of chemical processing, and/or foreign matter from the substrate W. The cleaning process (rinsing process) is a process for washing away chemical liquids, by-products of chemical processing, and/or foreign matter from the substrate W.

The processing tank 110 has a double tank structure including an inner tank 112 and an outer tank 114. The inner tank 112 and the outer tank 114 each have an upper opening that opens upward. The inner tank 112 is configured to store processing liquid LQ and to be able to accommodate multiple substrates W. The outer tank 114 is provided on the outer surface of the upper opening of the inner tank 112. The height of the upper edge of the outer tank 114 is higher than the height of the upper edge of the inner tank 112. Processing liquid LQ that spills over the upper edge of the inner tank 112 is collected by the outer tank 114.

The processing tank 110 includes a first side wall 116 and a second side wall 117 that face each other in a first direction D10. Specifically, the inner tank 112 includes a first side wall 116 and a second side wall 117. The first direction D10 is substantially parallel to the horizontal direction and the surface of the substrate W. The first side wall 116 and the second side wall 117 extend along the vertical direction D.

The substrate holding unit 120 holds multiple substrates W. The substrate holding unit 120 can also hold a single substrate W. The substrate holding unit 120 immerses multiple substrates W aligned at intervals in the processing liquid LQ stored in the processing tank 110.

Specifically, the substrate holding part 120 moves upward or downward along the vertical direction D while holding multiple substrates W. As the substrate holding part 120 moves downward, the multiple substrates W held by the substrate holding part 120 are immersed in the processing liquid LQ stored in the inner tank 112.

The substrate holding section 120 includes a main body plate 122 and a holding rod 124. The main body plate 122 is a plate extending in the vertical direction D (Z direction). The holding rod 124 extends from one main surface of the main body plate 122 in the horizontal direction (Y direction). The plurality of substrates W are aligned at intervals and are held in an upright position (vertical position) with the lower edges of each substrate W in contact with the plurality of holding rods 124 .

The substrate holder 120 may further include a lifting unit 126. The lifting unit 126 has a processing position where the plurality of substrates W held by the substrate holder 120 are located in the inner tank 112 and a processing position where the plurality of substrates W held by the substrate holder 120 are located above the inner tank 112. The main body plate 122 is raised and lowered between the retracted position and the retracted position. Therefore, by moving the main body plate 122 to the processing position by the lifting unit 126, the plurality of substrates W held by the holding rod 124 are immersed in the processing liquid LQ. As a result, a plurality of substrates W are processed.

Each of the plurality of processing liquid supply units An is arranged in the processing tank 110. The processing liquid supply unit An supplies the processing liquid LQ to the processing tank 110. For example, the processing liquid supply unit An supplies the processing liquid LQ to the processing tank 110 in a state where the processing liquid LQ is stored in the processing tank 110.

FIG. 2 is a schematic plan view showing the processing liquid supply section An and the bubble supply section 135. As shown in FIG. 2, the processing liquid supply section An extends along the second direction D20. The second direction D20 is substantially parallel to the horizontal direction and substantially orthogonal to the surface of the substrate W. Further, the first direction D10, the second direction D20, and the vertical direction D are substantially perpendicular to each other. The processing liquid supply section An is, for example, a processing liquid supply pipe. The material of the processing liquid supply pipe is, for example, quartz or PVC (polyvinyl chloride).

As shown in FIGS. 1 and 2, each of the plurality of processing liquid supply sections An has a plurality of processing liquid holes 3. In each treatment liquid supply section An, the treatment liquid LQ is supplied from each of the plurality of treatment liquid holes 3. The plurality of processing liquid holes 3 are provided at intervals along the second direction D20. In the example of FIG. 1, the processing liquid hole 3 faces diagonally downward.

Returning to FIG. 1, the multiple processing liquid supply units An include at least one first processing liquid supply unit An arranged on the side of the first side wall 116 and at least one second processing liquid supply unit An arranged on the side of the second side wall 117.

In the example of FIG. 1, the plurality of processing liquid supply units An include a plurality of first processing liquid supply units A1 to A3 arranged on the first side wall 116 side, and a plurality of first processing liquid supply units A1 to A3 arranged on the second side wall 117 side. It includes second processing liquid supply sections A4 to A6.

Specifically, the three first processing liquid supply units A1 to A3 are arranged on the first side wall 116. The first processing liquid supply units A1 to A3 are arranged at intervals in the vertical direction D on the first side wall 116. The first processing liquid supply unit A1 is arranged on the top tier. The first processing liquid supply unit A3 is arranged on the bottom tier. The first processing liquid supply unit A2 is arranged on the middle tier. In other words, the first processing liquid supply unit A2 is arranged between the first processing liquid supply unit A1 and the first processing liquid supply unit A3 in the vertical direction D.

The three second processing liquid supply units A4 to A6 are arranged on the second side wall 117. The second processing liquid supply units A4 to A6 are arranged at intervals in the vertical direction D on the second side wall 117. The second processing liquid supply section A6 is arranged at the top stage. The second processing liquid supply section A4 is arranged at the lowest stage. The second processing liquid supply section A5 is arranged in the middle stage. That is, the second processing liquid supply section A5 is arranged between the second processing liquid supply section A6 and the second processing liquid supply section A4 in the vertical direction D.

The processing liquid flow rate adjustment section 130 adjusts the flow rate of the processing liquid LQ supplied to the processing liquid supply section An for each processing liquid supply section An. In other words, the processing liquid flow rate adjustment section 130 adjusts the flow rate of the processing liquid LQ supplied to the processing tank 110 by the processing liquid supply section An for each processing liquid supply section An.

Adjustment of the flow rate of the processing liquid LQ includes keeping the flow rate of the processing liquid LQ constant, increasing the flow rate of the processing liquid LQ, decreasing the flow rate of the processing liquid LQ, and setting the flow rate of the processing liquid LQ to zero. In the first embodiment, the processing liquid flow rate adjustment unit 130 switches between supplying and stopping the supply of the processing liquid LQ to the processing liquid supply unit An for each processing liquid supply unit An. In other words, the processing liquid flow rate adjustment unit 130 switches between supplying and stopping the supply of the processing liquid LQ from the processing liquid supply unit An to the processing tank 110 for each processing liquid supply unit An.

Specifically, the processing liquid flow rate adjustment unit 130 includes a plurality of processing liquid flow rate adjustment mechanisms 132 corresponding to the plurality of processing liquid supply units An, respectively. Furthermore, a plurality of supply pipes P2 are provided corresponding to the plurality of processing liquid supply units An, respectively. One end of the supply pipe P2 is connected to the corresponding processing liquid supply unit An. The other end of the supply pipe P2 is connected to a common pipe P1. The common pipe P1 is connected to a processing liquid supply source TKA.

The multiple processing liquid flow rate adjustment mechanisms 132 are arranged on the multiple supply pipes P2, respectively. The processing liquid flow rate adjustment mechanisms 132 supply the processing liquid LQ supplied from the processing liquid supply source TKA and the common pipe P1 to the corresponding processing liquid supply unit An through the corresponding supply pipe P2. The processing liquid flow rate adjustment mechanisms 132 also adjust the flow rate of the processing liquid LQ supplied to the corresponding processing liquid supply unit An. In other words, the processing liquid flow rate adjustment mechanisms 132 adjust the flow rate of the processing liquid LQ supplied to the processing tank 110 by the corresponding processing liquid supply unit An. In the first embodiment, the processing liquid flow rate adjustment mechanism 132 switches between supplying and stopping the supply of the processing liquid LQ to the corresponding processing liquid supply unit An. In other words, in the first embodiment, the processing liquid flow rate adjustment mechanism 132 switches between supplying and stopping the supply of the processing liquid LQ from the corresponding processing liquid supply unit An to the processing tank 110.

2, the processing liquid flow rate adjustment mechanism 132 includes a flow meter a1, an adjustment valve a2, and a valve a3. The flow meter a1, the adjustment valve a2, and the valve a3 are arranged in this order on the supply pipe P2 from the upstream to the downstream of the supply pipe P2.

The flow meter a1 measures the flow rate of the treatment liquid LQ flowing through the supply pipe P2. The adjustment valve a2 adjusts the opening of the supply pipe P2 to adjust the flow rate of the treatment liquid LQ flowing through the supply pipe P2, thereby adjusting the flow rate of the treatment liquid LQ supplied to the treatment liquid supply unit An. The adjustment valve a2 adjusts the flow rate of the treatment liquid LQ based on the measurement result of the flow meter a1. Note that, for example, a mass flow controller may be provided instead of the flow meter a1 and the adjustment valve a2. The valve a3 opens and closes the supply pipe P2. In other words, the valve a3 switches between supplying and stopping the treatment liquid LQ from the supply pipe P2 to the treatment liquid supply unit An. Note that the treatment liquid flow rate adjustment mechanism 132 may include a filter that removes foreign matter from the treatment liquid LQ.

Returning to FIG. 1, the liquid drain section 150 discharges the processing liquid LQ collected in the outer tank 114 via the liquid drain pipe P5. Specifically, a drain pipe P5 is connected to the outer tank 114. Then, a drain portion 150 is arranged in the drain pipe P5. The drain section 150 includes, for example, a valve, and closes or opens the flow path of the drain pipe P5.

The bubble supply unit 135 is disposed inside the processing tank 110. The bubble supply unit 135 supplies the gas GA supplied from the bubble adjustment unit 140 into the processing liquid LQ in the processing tank 110. Specifically, the bubble supply unit 135 supplies bubbles BB of the gas GA into the processing liquid LQ in the processing tank 110. The gas GA is, for example, an inert gas. The inert gas is, for example, nitrogen or argon.

The bubble supply unit 135 includes at least one bubble supply pipe 1 . In the first embodiment, the bubble supply section 135 includes a plurality of bubble supply pipes 1. In the example of FIG. 1, the bubble supply section 135 includes six bubble supply pipes 1. Note that the number of bubble supply pipes 1 is not particularly limited. The bubble supply pipe 1 is, for example, a bubbler pipe.

The material of the air bubble supply pipe 1 is quartz or synthetic resin. In this case, the synthetic resin is, for example, PEEK (polyether ether ketone) or PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer).

As shown in FIGS. 1 and 2, each of the plurality of bubble supply pipes 1 has a plurality of bubble holes 2. As shown in FIGS. In the example of FIG. 1, the bubble holes 2 face upward along the vertical direction D. The bubble supply pipe 1 supplies the bubbles BB into the processing liquid LQ by discharging the gas GA supplied from the bubble adjustment section 140 from the bubble hole 2 . That is, the bubble supply pipe 1 receives the gas GA and supplies the bubbles BB to the processing liquid LQ.

The multiple bubble supply pipes 1 are arranged approximately parallel to each other and spaced apart in a plan view. In the example of FIG. 2, the multiple bubble supply pipes 1 are arranged symmetrically with respect to the imaginary center line CL. The imaginary center line CL passes through the center of each substrate W and extends along the second direction D20.

Specifically, in the processing tank 110, the plurality of bubble supply pipes 1 are arranged substantially parallel to each other and spaced apart from each other in the first direction D10. The bubble supply pipe 1 extends along the second direction D20. In each of the plurality of bubble supply pipes 1, the plurality of bubble holes 2 are arranged substantially in a straight line at intervals in the second direction D20. In each of the plurality of bubble supply pipes 1, each bubble hole 2 is provided on the upper surface of the bubble supply pipe 1.

Specifically, each of the plurality of bubble supply pipes 1 supplies bubbles BB from each of the plurality of bubble holes 2 to the processing liquid LQ from below the substrate W in a state where the substrate W is immersed in the processing liquid LQ. supply Therefore, compared to the case where bubbles BB are not supplied, the dissolved oxygen concentration in the processing liquid LQ can be reduced. As a result, the substrate W immersed in the processing liquid LQ can be effectively processed by the processing liquid LQ. Details of this point will be described later. Furthermore, by supplying the bubbles BB, the processing liquid LQ that contacts the surface of the substrate W can be effectively replaced with fresh processing liquid LQ.

The bubble adjustment unit 140 adjusts the amount of bubbles BB supplied to the treatment liquid LQ by adjusting the flow rate of the gas GA supplied to the bubble supply pipe 1 for each bubble supply pipe 1. Adjustment of the flow rate of the gas GA includes keeping the flow rate of the gas GA constant, increasing the flow rate of the gas GA, decreasing the flow rate of the gas GA, and making the flow rate of the gas GA zero. In the first embodiment, the bubble adjustment unit 140 switches between supplying and stopping the supply of the gas GA to the bubble supply pipe 1 for each bubble supply pipe 1. In other words, the bubble adjustment unit 140 switches between supplying and stopping the supply of bubbles BB from the bubble supply pipe 1 to the treatment liquid LQ of the treatment tank 110 for each bubble supply pipe 1.

Specifically, the bubble adjustment section 140 includes a plurality of bubble adjustment mechanisms 142 corresponding to the plurality of bubble supply pipes 1, respectively. In addition, a plurality of supply pipes P4 are provided corresponding to the plurality of bubble adjustment mechanisms 142, respectively. One end of the supply pipe P4 is connected to the corresponding bubble supply pipe 1. The other end of the supply pipe P4 is connected to the common pipe P3. The common pipe P3 is connected to the gas supply source TKB.

The plurality of bubble adjustment mechanisms 142 are respectively arranged on the plurality of supply pipes P4. The bubble adjustment mechanism 142 supplies the gas GA supplied from the gas supply source TKB and the common pipe P3 to the corresponding bubble supply pipe 1 through the corresponding supply pipe P4. The bubble adjustment mechanism 142 also adjusts the flow rate of the gas GA supplied to the corresponding bubble supply pipe 1. As a result, the amount of bubbles BB supplied to the treatment liquid LQ is adjusted for each bubble supply pipe 1. In the first embodiment, the bubble adjustment mechanism 142 switches between supplying and stopping the supply of the gas GA to the corresponding bubble supply pipe 1. In other words, in the first embodiment, the bubble adjustment mechanism 142 switches between supplying and stopping the supply of bubbles BB from the corresponding bubble supply pipe 1 to the treatment liquid LQ of the treatment tank 110.

Specifically, as shown in FIG. 2, the bubble adjustment mechanism 142 includes an adjustment valve b1, a flow meter b2, a filter b3, and a valve b4. The adjustment valve b1, the flow meter b2, the filter b3, and the valve b4 are arranged in the supply pipe P4 in this order from upstream to downstream of the supply pipe P4.

The adjustment valve b1 adjusts the flow rate of the gas GA flowing through the supply pipe P4 by adjusting the opening degree of the supply pipe P4, thereby adjusting the flow rate of the gas GA supplied to the bubble supply pipe 1. The flow meter b2 measures the flow rate of the gas GA flowing through the supply pipe P4. The adjustment valve b1 adjusts the flow rate of the gas GA based on the measurement result of the flowmeter b2. Note that, for example, a mass flow controller may be provided in place of the regulating valve b1 and the flow meter b2.

The filter b3 removes foreign matter from the gas GA flowing through the supply pipe P4. The valve b4 opens and closes the supply pipe P4. In other words, the valve b4 switches between supplying and stopping the supply of gas GA from the supply pipe P4 to the bubble supply pipe 1.

Next, the relationship between dissolved oxygen concentration and etching amount will be explained with reference to FIG. FIG. 3 is a graph showing the relationship between the dissolved oxygen concentration in the treatment liquid LQ and the etching amount. The horizontal axis shows the dissolved oxygen concentration (ppm) in the processing liquid LQ, and the vertical axis shows the etching amount of the substrate W.

Figure 3 shows an example in which TMAH was used as the processing liquid LQ. The concentration of TMAH was 0.31%. The gas GA was nitrogen. Therefore, the bubbles BB were nitrogen bubbles. A polysilicon film (polysilicon layer) was formed on the substrate W. Figure 3 shows the etching amount of the polysilicon film when the substrate W was immersed in TMAH. The etching amount is the value obtained by subtracting the thickness of the polysilicon film after immersion from the thickness of the polysilicon film before immersion in TMAH. The etching amount may be referred to as the "etching amount of the substrate W." In this specification, "after immersion of the substrate W" refers to "after the substrate W is immersed, processing is completed, and the substrate W is pulled up from the processing liquid LQ."

As shown in FIG. 3, the lower the dissolved oxygen concentration, the greater the amount of etching (processing amount) of the substrate W. The amount of etching (processing amount) was approximately directly proportional to the dissolved oxygen concentration. The proportionality constant was negative.

Next, the relationship between the supply time of the air bubbles BB and the dissolved oxygen concentration will be described with reference to Figure 4. Figure 4 is a graph showing the relationship between the supply time of the air bubbles BB and the dissolved oxygen concentration in the treatment liquid LQ. The horizontal axis shows the supply time (hours) of the air bubbles BB, and the vertical axis shows the dissolved oxygen concentration (ppm) in the treatment liquid LQ.

Figure 4 shows an example in which TMAH was used as the treatment liquid LQ. The concentration of TMAH was 0.31%. The gas GA for generating the bubbles BB was nitrogen. Therefore, the bubbles BB were nitrogen bubbles. Plot g1 shows the dissolved oxygen concentration when the flow rate of the gas GA was 10 L/min. Plot g2 shows the dissolved oxygen concentration when the flow rate of the gas GA was 20 L/min. Plot g3 shows the dissolved oxygen concentration when the flow rate of the gas GA was 30 L/min. In this case, the flow rate of the gas GA indicates the flow rate of the gas GA supplied to one bubble supply pipe 1.

As can be seen from plots g1 to g3, the dissolved oxygen concentration in the treatment liquid LQ became approximately constant in about one hour. Furthermore, when the dissolved oxygen concentration became approximately constant, the greater the flow rate of the gas GA, the lower the dissolved oxygen concentration in the treatment liquid LQ. In other words, when the dissolved oxygen concentration became approximately constant, the greater the amount of air bubbles BB supplied to the treatment liquid LQ, the lower the dissolved oxygen concentration in the treatment liquid LQ. This is because the greater the flow rate of the gas GA, the more air bubbles BB are supplied to the treatment liquid LQ.

The following was inferred from plots g1 to g3. That is, when there is a distribution of bubbles BB in the processing liquid LQ in the processing tank 110, the area where there are more air bubbles BB in the processing liquid LQ has a lower dissolved oxygen concentration, and the area where there are fewer air bubbles BB in the processing liquid LQ has a lower dissolved oxygen concentration. It was inferred that the oxygen concentration would increase. The inventor of the present application has confirmed through experiments that such speculation is correct.

As explained above with reference to Figures 3 and 4, the more bubbles BB are supplied to the processing liquid LQ, the lower the dissolved oxygen concentration in the processing liquid LQ. And, the lower the dissolved oxygen concentration in the processing liquid LQ, the greater the etching amount (processing amount) of the substrate W.

That is, the more bubbles BB supplied to the processing liquid LQ, the greater the amount of etching (processing amount) of the substrate W. In other words, the greater the flow rate of the gas GA for generating the bubbles BB, the greater the amount of etching (processing amount) of the substrate W. On the other hand, the fewer bubbles BB supplied to the processing liquid LQ, the smaller the amount of etching (processing amount) of the substrate W. In other words, the smaller the flow rate of the gas GA for generating the bubbles BB, the smaller the amount of etching (processing amount) of the substrate W.

In addition, from the graphs of Figures 3 and 4, it can be inferred that when there is a distribution of bubbles BB in the processing liquid LQ in the processing tank 110, the etching amount (processing amount) of the substrate W will be greater in areas of the processing liquid LQ with more bubbles BB, and the etching amount (processing amount) of the substrate W will be smaller in areas of the processing liquid LQ with fewer bubbles BB. Similarly, it can be inferred that when there is a distribution of bubbles BB in the processing liquid LQ in the processing tank 110, the etching rate (processing amount) of the substrate W will be higher in areas of the processing liquid LQ with more bubbles BB, and the etching rate (processing amount) of the substrate W will be smaller in areas of the processing liquid LQ with fewer bubbles BB. The inventors of the present application have confirmed through experiments that such an inference is correct.

Returning to FIG. 1, the control device 160 controls each component of the substrate processing apparatus 100. For example, the control device 160 controls the substrate holding unit 120, the processing liquid flow rate adjustment unit 130, the bubble adjustment unit 140, and the drainage unit 150.

Control device 160 includes a control section 161 and a storage section 162. The control unit 161 includes processors such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The storage unit 162 includes a storage device and stores data and computer programs. The processor of the control unit 161 executes a computer program stored in the storage device of the storage unit 162 to control each component of the substrate processing apparatus 100. For example, the storage unit 162 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory and a hard disk drive. The storage unit 162 may include a removable medium such as an optical disk. Storage unit 162 may be, for example, a non-transitory computer readable storage medium. Control device 160 may include an input device and a display device.

Continuing to refer to FIG. 1, the details of the processing liquid supply unit An will be described. At least one of the first processing liquid supply units A1 to A3 supplies the processing liquid LQ toward the rising bubbles BB. At least one of the second processing liquid supply units A4 to A6 supplies the processing liquid LQ toward the rising bubbles BB. Therefore, according to the first embodiment, the control unit 161 controls the supply and stop of the processing liquid LQ from the first processing liquid supply unit An and the supply and stop of the processing liquid LQ from the second processing liquid supply unit An individually via the processing liquid flow rate adjustment unit 130, thereby controlling the behavior of a large number of bubbles BB rising in the processing liquid LQ. As a result, the area where the bubbles BB are insufficient on and near the surface of the substrate W can be reduced. Therefore, the dissolved oxygen concentration in the processing liquid LQ can be reduced over the entire surface of the substrate W, so that processing unevenness due to the processing liquid LQ can be suppressed within the surface of the substrate W.

Specifically, the at least one first processing liquid supply unit An discharges the processing liquid LQ from the first side wall 116 side in a direction intersecting the vertical direction D, thereby filling the rising bubbles BB. A flow of the processing liquid LQ is generated in the direction. As a result, the behavior of bubbles B can be controlled. In the example of FIG. 1, the first processing liquid supply section An discharges the processing liquid LQ obliquely downward from the first side wall 116 side. Furthermore, the at least one second processing liquid supply unit An discharges the processing liquid LQ from the second side wall 117 side in a direction intersecting the vertical direction D, thereby processing the rising bubbles BB. Generates a flow of liquid LQ. As a result, the behavior of bubbles B can be controlled. In the example of FIG. 1, the second processing liquid supply section An discharges the processing liquid LQ obliquely downward from the second side wall 117 side.

Continuing to refer to FIG. 1, a group consisting of one or more processing liquid supply units An will be described. Two or more of the multiple processing liquid supply units An each belong to at least one of the different groups. A group is a control unit of the processing liquid supply units An. Therefore, the control unit 161 controls the processing liquid supply units An on a group basis via the processing liquid flow rate adjustment unit 130.

One processing liquid supply section An may belong to one group, or one processing liquid supply section An may belong to a plurality of groups. Moreover, at least one processing liquid supply section An belongs to each of the plurality of groups. Therefore, one processing liquid supply section An may belong to one group, or a plurality of processing liquid supply sections An may belong to one group. Further, some of the processing liquid supply sections An among the plurality of processing liquid supply sections An may not belong to any group. In this case, the processing liquid supply section An that does not belong to any group is not used when controlling the behavior of bubbles. In other words, only the processing liquid supply section An belonging to each group is used when controlling the behavior of bubbles.

The control unit 161 supplies the processing liquid to the processing liquid supply unit An of each group toward the bubbles BB in the processing liquid LQ of the processing tank 110 while sequentially switching each group via the processing liquid flow rate adjustment unit 130. Supply LQ.

The processing liquid supply unit An belonging to a group supplies the processing liquid LQ toward the bubbles BB in different periods for each group. Therefore, according to the first embodiment, since the flow of the processing liquid LQ is different for each group in the processing tank 110, different flows can be applied to a large number of bubbles BB rising in the processing liquid LQ in different periods. As a result, on the surface of the substrate W and in the vicinity thereof, regions lacking bubbles BB can be more effectively reduced. Therefore, since the dissolved oxygen concentration in the processing liquid LQ can be more effectively reduced over the entire surface of the substrate W, it is possible to more effectively suppress processing unevenness caused by the processing liquid LQ within the surface of the substrate W.

Hereinafter, as an example, in Embodiment 1, the plurality of groups includes a first group G1, a second group G2, and a third group G3.

Next, with reference to Figures 5 and 6, we will explain how the processing liquid supply units An of the first group G1 to the third group G3 control the behavior of the air bubbles BB.

Figure 5 shows table TB1 that defines the first group G1 to the third group G3 of the processing liquid supply unit An. As shown in table TB1 in Figure 5, the first group G1, the second group G2, and the third group G3 are set for the substrate processing apparatus 100.

The first group G1 includes at least one of the first processing liquid supply units A1 to A3 shown in FIG. 1, that is, the first processing liquid supply unit A3, but does not include the second processing liquid supply units A4 to A6. In other words, the first group G1 includes only the first processing liquid supply unit A3.

The second group G2 includes at least one second processing liquid supply unit A4 among the multiple second processing liquid supply units A4 to A6, but does not include the first processing liquid supply units A1 to A3. In other words, the second group G2 includes only the second processing liquid supply unit A4.

The third group G3 includes at least one first processing liquid supply section A2 among the plurality of first processing liquid supply sections A1 to A3 and at least one first processing liquid supply section A2 among the plurality of second processing liquid supply sections A4 to A6. 2 processing liquid supply section A5. That is, the third group G3 includes the first processing liquid supply section A2 and the second processing liquid supply section A5.

FIG. 6 is a diagram showing a control sequence when controlling the behavior of the bubbles BB using the first group G1 to the third group G3 of the processing liquid supply section An.

As shown in FIG. 6, first, in step ST1, the first treatment liquid supply section A3 belonging to the first group G1 supplies the treatment liquid LQ toward the bubbles BB during a first predetermined period T1.

Next, in step ST2, in a second predetermined period T2 after the first predetermined period T1 has elapsed, the second processing liquid supply unit A4 belonging to the second group G2 supplies the processing liquid LQ toward the bubbles BB.

Next, in step ST3, during a third predetermined period T3 after the second predetermined period T2 has elapsed, the first processing liquid supply unit A2 and the second processing liquid supply unit A5 belonging to the third group G3 supply processing liquid LQ toward the bubble BB.

As described above with reference to FIG. 6, according to the first embodiment, the behavior of the bubbles BB is controlled by using the first group G1 to the third group G3 at different timings. As a result, on the surface of the substrate W and in the vicinity thereof, regions lacking bubbles BB can be more effectively reduced. This point is demonstrated by the examples described with reference to FIGS. 7-9. Note that in the first embodiment, the first predetermined period T1, the second predetermined period T2, and the third predetermined period T3 are consecutive periods with different timings and have the same length.

Figure 7(a) is a diagram showing a map image MP1 illustrating the results of a simulation of the distribution of air bubbles BB according to a comparative example. Figure 7(b) is a diagram showing a map image MP2 illustrating the results of a simulation of the distribution of air bubbles BB according to an embodiment of the present invention. Map images MP1 and MP2 show the amount of air bubbles BB passing upwards across the surface of the substrate W. This will be described in detail later. In map images MP1 and MP2, the denser the dots are, the more air bubbles BB have passed through. White areas with no dots indicate areas where the fewest air bubbles BB have passed through. Note that in reality, map images MP1 and MP2 have a gradation that indicates the amount of air bubbles BB, but for simplicity, the amount of air bubbles BB is shown in four stages.

In the example shown in FIG. 7(b), a simulation was performed assuming that the substrate processing apparatus 100 shown in FIG. 1 was used. Hereinafter, the simulation may be referred to as "bubble behavior simulation". The simulation was performed by a simulation device (not shown). The simulation device is a computer with a processor and a storage device.

Further, in the example, steps ST1 to ST3 shown in FIG. 6 were reproduced by simulation. The simulation conditions in the example were as follows. That is, the supply amount of the treatment liquid LQ from the first treatment liquid supply section A3 in step ST1 was set to 30 L/min. The supply amount of the treatment liquid LQ from the second treatment liquid supply section A4 in step ST2 was set to 30 L/min. The supply amount of the processing liquid LQ from the first processing liquid supply section A2 in step ST3 is set to 20 L/min, and the supply amount of the processing liquid LQ from the second processing liquid supply section A5 in step ST3 is set to 20 L/min. / minute. Each of steps ST1 to ST3 was performed for 8 seconds. In other words, the total execution time of steps ST1 to ST3 was 24 seconds. Further, the flow rate of the gas GA supplied to the bubble supply pipe 1 was set to 5 L/min per pipe. Further, the diameter of the bubble holes 2 provided in one bubble supply pipe 1 is 0.2 mm, the number of bubble holes 2 provided in one bubble supply pipe 1 is 60, and the number of bubble holes 2 provided in one bubble supply pipe 1 is 0.2 mm. The interval between the two was set to 5 mm. Furthermore, the diameter of the processing liquid holes 3 provided in one processing liquid supply part An is 1 mm, the number of processing liquid holes 3 provided in one processing liquid supply part An is 70, and the number of processing liquid holes 3 provided in one processing liquid supply part An is 1 mm. The interval between the treatment liquid holes 3 was set to 5 mm.

On the other hand, in the comparative example shown in FIG. 7A, a simulation was performed assuming that a substrate processing apparatus having a configuration in which the processing liquid supply section An was removed from the substrate processing apparatus 100 shown in FIG. 1 was used. The simulation conditions in the comparative example were as follows. That is, in the comparative example, supplying the processing liquid LQ upward from a plurality of holes in the punching plate arranged below the bubble supply pipe was reproduced. The total flow rate of the treatment liquid LQ was 20 L/min. The conditions of the bubble supply tube were the same as in the example. Further, the processing time was 24 seconds.

As shown in FIG. 7A, in the comparative example, in a region 10 (white region) extending in the vertical direction D in the central portion of the substrate W, the amount of bubbles BB passing through was small. Also, in the lower area 11 (white area) of the substrate W, the amount of bubbles BB passing through was small. Therefore, it was estimated that the etching rate in regions 10 and 11 would be smaller than in other regions. That is, in the comparative example, it was possible to infer that processing unevenness due to the processing liquid LQ occurs within the plane of the substrate W.

On the other hand, as shown in FIG. 7(b), in the example, there was no white area in the map image MP2. That is, in the example, the amount of bubbles BB passing through the entire surface of the substrate W was larger than that in the comparative example. Therefore, it was possible to infer that in the example, the difference in etching rate at each position on the surface of the substrate W was smaller than in the comparative example. In other words, it was estimated that in the example, the processing unevenness due to the processing liquid LQ could be reduced within the plane of the substrate W, compared to the comparative example.

Next, the simulation in the above embodiment will be described in detail with reference to Figures 6 to 9. Figure 8 is a diagram showing map images MP21 to MP23 that show the simulation results of the distribution of air bubbles BB in each process ST1 to ST3 (Figure 6) in the embodiment of the present invention. The method of expressing the amount of air bubbles BB in map images MP21 to MP23 is the same as the method of expressing the amount of air bubbles BB in map images MP1 and MP2 in Figure 7.

As shown in FIGS. 6 and 8, map image MP21 shows the amount of bubbles BB passing upward over the surface of substrate W in step ST1. Map image MP22 shows the amount of bubbles BB passing upward over the surface of substrate W in step ST2. Map image MP23 shows the amount of bubbles BB passing upward over the surface of substrate W in step ST3. An image obtained by superimposing map image MP21, map image MP22, and map image MP23 is map image MP2 according to the example shown in FIG. 7(b).

As shown in FIGS. 7 and 8, by generating different distributions of bubbles BB in each process ST1 to ST3, there is a shortage of bubbles BB on the surface of the substrate W and its vicinity in total in processes ST1 to ST3. We were able to reduce the area where

Figure 9(a) is a plan view showing a substrate W for explaining the simulation of the above example in detail.

As shown in FIG. 9A, in the simulation, a large number of monitoring points 12 for monitoring bubbles BB were set on the surface of the substrate W. In the simulation, the number of bubbles BB passing upward through the monitoring point 12 was counted for each monitoring point 12. For example, the map image MP21 in FIG. 8 is created by plotting, for each monitoring point 12, the cumulative value of the number of bubbles BB that passed through each monitoring point 12 during the 8 seconds when step ST1 (FIG. 6) was performed. . The same was true for map images MP22 and MP23. Therefore, the map image MP2 in FIG. 7(b) shows the cumulative value of the number of passages of bubbles BB at each monitoring point 12 in total from steps ST1 to ST3. Note that for the map image MP1 of the comparative example shown in FIG. 7(a), the cumulative value of the number of passages of bubbles BB at each monitoring point 12 is also shown, similarly to the example.

Note that an area 15 having four monitoring points 12 as vertices is set on the substrate W. As a result, a plurality of regions 15 are set on the substrate W. In the example of FIG. 9(a), the region 15 is a square.

Figure 9(b) is a side view showing the substrate W and the bubble supply pipe 1 to explain the simulation of the above embodiment in detail. As shown in Figure 9(b), in the simulation, it was assumed that the bubble supply pipe 1 had multiple bubble holes 2 arranged at equal intervals d. The intervals d were 5 mm. Furthermore, at each monitoring point 12, the number of bubbles BB passing through the region 13 was counted. The width L of the region 13 was 10 mm. In other words, the number of bubbles BB passing through a range of width L from the surface of the substrate W was counted at each monitoring point 12. This was also the case in the comparative example.

Next, a substrate processing method according to embodiment 1 will be described with reference to Figures 1 and 10. The substrate processing method is performed by the substrate processing apparatus 100. Figure 10 is a flowchart showing the substrate processing method according to embodiment 1. As shown in Figure 10, the substrate processing method includes steps S1 to S6. Steps S1 to S6 are performed under the control of the control unit 161. In the description of the substrate processing method, a first group G1 to an Mth group GM are set for the substrate processing apparatus 100. "M" is an integer equal to or greater than 2.

As shown in FIGS. 1 and 10, first, in step S1, each bubble supply pipe 1 of the bubble supply unit 135 supplies a plurality of bubbles to the processing liquid LQ stored in the processing tank 110 from below the substrate W. Start supplying bubbles BB. Step S1 corresponds to an example of the "bubble supply step" of the present invention.

Next, in step S2, supply of the processing liquid LQ from all the processing liquid supply units An to the processing liquid LQ stored in the processing tank 110 is started.

Next, in step S3, the substrate holder 120 immerses the substrate W in the processing liquid LQ stored in the processing tank 110. Step S3 corresponds to an example of the "immersion step" of the present invention.

Next, in step S4, the behavior of the bubbles BB is controlled by supplying the treatment liquid LQ toward the bubbles BB from one or more treatment liquid supply units An while switching the treatment liquid supply units An. Therefore, according to the substrate processing method according to the first embodiment, it is possible to suppress unevenness in the amount of bubbles BB on the surface of the substrate W and in the vicinity thereof. That is, on the surface of the substrate W and in the vicinity thereof, the area where the bubbles BB are insufficient can be reduced. As a result, the dissolved oxygen concentration in the processing liquid LQ can be reduced over the entire surface of the substrate W, so that processing unevenness caused by the processing liquid LQ can be suppressed within the surface of the substrate W. Step S4 corresponds to an example of the "bubble control step" of the present invention.

Specifically, step S4 includes steps S41, S42, S43, S44, ..., S4M. First, in step S41, the treatment liquid supply unit An belonging to the first group G1 supplies the treatment liquid LQ toward the bubble BB. Next, in step S42, the treatment liquid supply unit An belonging to the second group G2 supplies the treatment liquid LQ toward the bubble BB. Thereafter, steps S43, S44, ..., S4M are executed in sequence. In step S4M, the treatment liquid supply unit An belonging to the Mth group GM supplies the treatment liquid LQ toward the bubble BB. In this way, in step S4, the treatment liquid supply units An belonging to the groups supply the treatment liquid LQ toward the bubble BB for periods that differ for each group.

Next, in step S5, supply of the processing liquid LQ from all the processing liquid supply units An to the processing liquid LQ stored in the processing tank 110 is started.

Next, in step S6, the substrate holder 120 lifts the substrate W out of the processing liquid LQ. The substrate processing method then ends.

As described above with reference to FIG. 10, according to the first embodiment, before the substrate W is immersed in the processing liquid LQ, the processing liquid LQ is supplied from all the processing liquid supply units An (step S2). In addition, before the substrate W is lifted from the processing liquid LQ, the processing liquid LQ is supplied from all the processing liquid supply units An (step S5). As a result, it is possible to prevent the processing liquid LQ stored in the processing tank 110 from stagnating. In addition, it is possible to prevent the substrate W from being displaced. For the same reason, it is preferable to supply the processing liquid LQ from all the processing liquid supply units An even during standby.

(First Modification)
A first modified example of the first embodiment will be described with reference to Figures 1 and 11. The first modified example is different from the first embodiment, in that the supply flow rate of the treatment liquid LQ and the supply flow rate of the gas GA for generating the bubbles BB are precisely adjusted. The first modified example mainly differs from the first embodiment, in that the supply flow rate of the treatment liquid LQ and the supply flow rate of the gas GA for generating the bubbles BB are precisely adjusted. Below, the differences between the first modified example and the first embodiment will be mainly described.

In the first modified example, the processing liquid flow rate adjustment unit 130 of the substrate processing apparatus 100 shown in FIG. 1 adjusts the supply flow rate of the processing liquid LQ for each processing liquid supply unit An. Therefore, according to the first modified example, the flow of the processing liquid LQ in the processing tank 110 can be controlled with greater precision. As a result, the behavior of the numerous bubbles BB rising in the processing liquid LQ can be controlled with greater precision. Therefore, the area where there is a shortage of bubbles BB on the surface of the substrate W and in its vicinity can be further reduced, and the dissolved oxygen concentration in the processing liquid LQ can be further reduced over the entire surface of the substrate W. The reduction in the dissolved oxygen concentration can further suppress processing unevenness caused by the processing liquid LQ within the surface of the substrate W.

In the first modified example, the adjustment of the supply flow rate of the treatment liquid LQ includes, in addition to starting and stopping the supply of the treatment liquid LQ, changing the supply flow rate of the treatment liquid LQ from the treatment liquid supply unit An within one group, or changing the supply flow rate of the treatment liquid LQ from the treatment liquid supply unit An between multiple groups. Changing the supply flow rate of the treatment liquid LQ includes changing the supply flow rate in stages, or changing the supply flow rate continuously.

In addition, in the first modified example, the bubble adjustment unit 140 adjusts the supply flow rate of the gas GA for generating the bubbles BB for each bubble supply pipe 1. Therefore, according to the first modified example, the behavior of the numerous bubbles BB rising in the processing liquid LQ can be controlled with greater precision. As a result, the bubbles BB can be distributed over the entire surface of the substrate W, so that the dissolved oxygen concentration in the processing liquid LQ can be further reduced over the entire surface of the substrate W. Therefore, processing unevenness caused by the processing liquid LQ within the surface of the substrate W can be further suppressed.

In the first modification, adjusting the supply flow rate of gas GA includes changing the supply flow rate of gas GA in addition to starting and stopping the supply of gas GA. Changing the supply flow rate of gas GA includes changing the supply flow rate stepwise or continuously.

Next, with reference to FIG. 11, a substrate processing method according to a first modification will be described. The substrate processing method is executed by the substrate processing apparatus 100. FIG. 11 is a flowchart showing a substrate processing method according to a first modification of the first embodiment. As shown in FIG. 11, the substrate processing method includes steps S11 to S17. Steps S11 to S17 are executed under the control of the control section 161.

Steps S11 to S13 shown in FIG. 11 are similar to steps S1 to S3 shown in FIG. 10, respectively.

As shown in FIGS. 1 and 11, after step S13, steps S14 and S15 are executed in parallel.

In step S14, the supply flow rate of the treatment liquid LQ is adjusted for each treatment liquid supply unit An by the treatment liquid flow rate adjustment unit 130 in the first group G1 to the Mth group GM.

Specifically, step S14 includes steps S141, S142, S143, S144, ..., S14M. First, in step S141, the treatment liquid flow rate adjustment unit 130 adjusts the supply flow rate of the treatment liquid LQ from the treatment liquid supply unit An belonging to the first group G1 to control the behavior of the air bubbles BB. Next, in step S142, the treatment liquid flow rate adjustment unit 130 adjusts the supply flow rate of the treatment liquid LQ from the treatment liquid supply unit An belonging to the second group G2 to control the behavior of the air bubbles BB. Thereafter, steps S143, S144, ..., S14M are executed in sequence. In step S14M, the treatment liquid flow rate adjustment unit 130 adjusts the supply flow rate of the treatment liquid LQ from the treatment liquid supply unit An belonging to the Mth group GM to control the behavior of the air bubbles BB. In this way, in step S14, the supply flow rate of the treatment liquid supply unit An belonging to the group is adjusted for each group for a period different for each group.

On the other hand, in step S15, in response to the supply of the processing liquid LQ by the first group G1 to the Mth group GM, the bubble adjustment unit 140 supplies gas GA for generating bubbles BB to each bubble supply pipe 1. The flow rate is adjusted.

Specifically, step S15 includes steps S151, S152, S153, S154, ..., S15M. First, in step S151, the bubble adjustment unit 140 adjusts the supply flow rate of the gas GA in response to the supply of the treatment liquid LQ from the treatment liquid supply unit An belonging to the first group G1. Next, in step S152, the bubble adjustment unit 140 adjusts the supply flow rate of the gas GA in response to the supply of the treatment liquid LQ from the treatment liquid supply unit An belonging to the second group G2. Thereafter, steps S153, S154, ..., S15M are executed in sequence. In step S15M, the bubble adjustment unit 140 adjusts the supply flow rate of the gas GA in response to the supply of the treatment liquid LQ from the treatment liquid supply unit An belonging to the Mth group GM. In this way, in step S15, the supply flow rate of the gas GA is adjusted in response to the supply of the treatment liquid LQ by each group.

Next, in step S16, the supply of treatment liquid LQ is started from all treatment liquid supply units An toward the treatment liquid LQ stored in the treatment tank 110.

Next, in step S17, the substrate holder 120 lifts the substrate W out of the processing liquid LQ. The substrate processing method then ends.

(Second modification)
A second modification of the first embodiment will be described with reference to FIGS. 1 and 12. The second modification differs from the first embodiment mainly in that there is a processing liquid supply section An that is common to a plurality of groups. Hereinafter, the differences between the second modification example and the first embodiment will be mainly explained.

In the second modified example, as an example, a first group G10, a second group G20, a third group G30, a fourth group G40, and a fifth group G50 are set for the substrate processing apparatus 100.

Figure 12 is a diagram showing table TB2 that defines the first group G10 to the fifth group G50 of the processing liquid supply unit An. As shown in table TB2 in Figure 12, the first group G10 includes only the first processing liquid supply unit A3. The second group G20 includes the first processing liquid supply unit A3 and the second processing liquid supply unit A4. The third group G30 includes only the second processing liquid supply unit A4.

The second group G20 includes the first processing liquid supply section A3, which also belongs to the first group G10, and the second processing liquid supply section A4, which also belongs to the third group G30. Therefore, according to the second modification, it is possible to prevent the supply of the processing liquid LQ from being stopped when moving from the first group G10 to the third group G30. As a result, it is possible to smoothly transition from the first group G10 to the third group G30.

The fourth group G40 includes a first processing liquid supply section A2, a second processing liquid supply section A4, and a second processing liquid supply section A5.

The fifth group G50 includes a first processing liquid supply section A2 and a second processing liquid supply section A5.

The fourth group G40 includes the second processing liquid supply unit A4, which also belongs to the third group G30, and the first processing liquid supply unit A2 and the second processing liquid supply unit A5, which also belong to the fifth group G50. Therefore, according to the second modified example, it is possible to prevent the supply of the processing liquid LQ from being stopped when transitioning from the third group G30 to the fifth group G50. As a result, a smooth transition can be made from the third group G30 to the fifth group G50.

(Third Modification)
A third modified example of the first embodiment will be described with reference to Fig. 1 and Fig. 13. The third modified example is mainly different from the first embodiment in that it includes eight bubble supply pipes 1. The following mainly describes the differences between the third modified example and the first embodiment.

Figure 13 is a schematic cross-sectional view showing a substrate processing apparatus 100A according to a third modified example. As shown in Figure 13, in the substrate processing apparatus 100A, the bubble supply unit 135 includes eight bubble supply pipes 1. Therefore, according to the third modified example, more bubbles BB can be supplied to the processing liquid LQ compared to when the bubble supply unit 135 includes less than eight bubble supply pipes 1. As a result, the area where bubbles BB are insufficient on the surface of the substrate W and in its vicinity can be further reduced. Therefore, the dissolved oxygen concentration in the processing liquid LQ can be further reduced over the entire surface of the substrate W, so that processing unevenness due to the processing liquid LQ within the surface of the substrate W can be further suppressed.

(Fourth Modification)
A fourth modified example of the first embodiment will be described with reference to Figures 14 to 17. The fourth modified example is different from the first embodiment in that the substrate processing is performed using a trained model LM generated by machine learning. The following mainly describes the differences between the fourth modified example and the first embodiment.

FIG. 14 is a block diagram showing a control device 160 of a substrate processing apparatus 100B according to a fourth modification of the first embodiment. As shown in FIG. 14, the control device 160 includes a communication section 163, an input section 164, and a display section 165 in addition to a control section 161 and a storage section 162. The communication unit 163 is connected to a network and communicates with external devices. Networks include, for example, the Internet, LANs, public telephone networks, and short-range wireless networks. The communication unit 163 is a communication device, for example, a network interface controller. The communication unit 163 may include a wired communication module or a wireless communication module. The input unit 164 is an input device for inputting various information to the control unit 161. For example, the input unit 164 is a keyboard and pointing device, or a touch panel. Display unit 165 displays images. The display section 165 is, for example, a liquid crystal display or an organic electroluminescent display.

The storage unit 162 stores a control program PG1, recipe information RC, and a learned model LM. The control unit 161 processes the substrate W with the processing liquid LQ according to the recipe information RC by executing the control program PG1. The recipe information RC defines processing contents and processing procedures for the substrate W. Specifically, by executing the control program PG1, the control unit 161 controls the storage unit 162, the communication unit 163, the input unit 164, the display unit 165, the substrate holding unit 120 shown in FIG. 1, and the processing liquid flow rate adjustment unit 130. , the bubble adjustment section 140, and the liquid drainage section 150. Further, the control unit 161 starts the learned model LM by executing the control program PG1.

The learned model LM is constructed by learning learning data (hereinafter referred to as "learning data DT").

The learning data DT includes processing amount information IF1 and processing condition information IF2. The processing amount information IF1 is an explanatory variable. In other words, the processing amount information IF1 is a feature. The processing condition information IF2 is a target variable.

The processing amount information IF1 includes information indicating the processing amount of the learning substrate (hereinafter referred to as "learning substrate Wa") by the learning processing liquid. In the fourth modified example, the learning processing liquid is a virtual processing liquid in the air bubble behavior simulation and is used for learning purposes. The learning substrate Wa is a virtual substrate in the air bubble behavior simulation and is used for learning purposes. The processing amount of the learning substrate Wa is, for example, the etching rate of the learning substrate Wa, the etching amount of the learning substrate Wa, or the thickness of the learning substrate Wa.

The processing condition information IF2 includes at least information indicating one or more learning processing liquid supply units belonging to each learning group, and information indicating the timing at which each learning group supplies the learning processing liquid. The learning group is a virtual group corresponding to the group defined in the first embodiment, and is used for learning in the bubble behavior simulation. The learning treatment liquid supply section is a virtual treatment liquid supply section corresponding to the treatment liquid supply section An of the first embodiment, and is used for learning purposes in the bubble behavior simulation. Further, the learning processing liquid supply unit supplies the learning processing liquid in the bubble behavior simulation.

Each of two or more of the multiple learning processing liquid supply units belongs to at least one of the mutually different learning groups. The learning group is the control unit of the learning processing liquid supply unit. Therefore, in the bubble behavior simulation, the learning processing liquid supply units are controlled on a learning group basis.

One learning processing liquid supply unit may belong to one learning group, and one learning processing liquid supply unit may belong to multiple learning groups. Also, at least one learning processing liquid supply unit belongs to each of the multiple learning groups. Therefore, one learning processing liquid supply unit may belong to one learning group, and multiple learning processing liquid supply units may belong to one learning group. Also, some of the multiple learning processing liquid supply units may not belong to any learning group. In this case, the learning processing liquid supply units that do not belong to any learning group are not used in the bubble behavior simulation. In other words, only the learning processing liquid supply units that belong to each learning group are used in the bubble behavior simulation.

In the bubble behavior simulation, the learning processing liquid supply unit belonging to the learning group supplies the learning processing liquid to the bubbles during different periods for each learning group.

The control unit 161 inputs the input information IF3 to the trained model LM and obtains the output information IF4 from the trained model LM. The input information IF3 includes information indicating a target value of the amount of processing of the substrate W by the processing liquid LQ. The processing amount of the substrate W indicates, for example, the etching rate of the substrate W, the amount of etching of the substrate W, or the thickness of the substrate W.

The output information IF4 includes at least information indicating one or more processing liquid supply units An belonging to each group, and information indicating the timing at which each group should supply the processing liquid LQ. In this case, "timing" includes the order of the groups and the implementation period of each group.

In the fourth modified example, the control unit 161 controls multiple processing liquid supply units An based on the output information IF4. Specifically, the control unit 161 controls each processing liquid supply unit An to the settings indicated by the output information IF4, thereby controlling the behavior of the bubbles BB by the processing liquid LQ. As a result, the area where the bubbles BB are insufficient on the surface of the substrate W and in its vicinity can be reduced. Therefore, the dissolved oxygen concentration in the processing liquid LQ can be reduced over the entire surface of the substrate W, thereby suppressing processing unevenness due to the processing liquid LQ within the surface of the substrate W.

Next, a substrate processing method according to the fourth modified example will be described with reference to Figs. 14 and 15. Fig. 15 is a flowchart showing the substrate processing method according to the fourth modified example. The substrate processing method is performed by the substrate processing apparatus 100B. As shown in Fig. 15, the substrate processing method includes steps S21 to S27. Steps S21 to S27 are performed under the control of the control unit 161.

As shown in FIGS. 14 and 15, first, in step S21, the control unit 161 inputs input information IF3 to the trained model LM, and acquires output information IF4 from the trained model LM. Step S21 corresponds to an example of the "learned model utilization step" of the present invention.

Steps S22 to S24 are similar to steps S1 to S3 shown in FIG. 10, respectively, and will not be described. After step S24, the process proceeds to step S25.

Next, in step S25, the control unit 161 controls the multiple processing liquid supply units An based on the processing conditions indicated by the output information IF4 acquired in step S21 (information indicating one or more processing liquid supply units An belonging to each group, and information indicating the timing at which each group should supply the processing liquid LQ).

Specifically, step S25 includes steps S251, S252, S253, S254, ..., S25M. First, in step S251, the processing liquid supply unit An belonging to the first group G1 supplies the processing liquid LQ toward the air bubble BB based on the processing conditions indicated by the output information IF4. Next, in step S252, the processing liquid supply unit An belonging to the second group G2 supplies the processing liquid LQ toward the air bubble BB based on the processing conditions indicated by the output information IF4. Thereafter, steps S253, S254, ..., S25M are executed in sequence. In step S25M, the processing liquid supply unit An belonging to the Mth group GM supplies the processing liquid LQ toward the air bubble BB based on the processing conditions indicated by the output information IF4. In this way, in step S25, the processing liquid supply unit An belonging to the group supplies the processing liquid LQ toward the air bubble BB for a period that differs for each group based on the processing conditions indicated by the output information IF4.

Next, in step S26, the supply of treatment liquid LQ is started from all treatment liquid supply units An toward the treatment liquid LQ stored in the treatment tank 110.

Next, in step S27, the substrate holder 120 lifts the substrate W out of the processing liquid LQ. The substrate processing method then ends.

Next, with reference to FIG. 16, a learning device 170 according to a fourth modification will be described. Learning device 170 is, for example, a computer. FIG. 16 is a block diagram showing the learning device 170. As shown in FIG. 16, the learning device 170 includes a processing section 171, a storage section 172, a communication section 173, an input section 174, and a display section 175.

The processing unit 171 includes a processor such as a CPU and a GPU. The memory unit 172 includes a storage device and stores data and computer programs. The processor of the processing unit 171 executes computer programs stored in the storage device of the memory unit 172 to perform various processes. The hardware configuration of the memory unit 172 is similar to the hardware configuration of the memory unit 162 in FIG. 14.

The communication unit 173 is connected to a network and communicates with external devices. The hardware configuration of the communication unit 173 is similar to the hardware configuration of the communication unit 163 in FIG. 14. The input unit 174 is an input device for inputting various information to the processing unit 171. The hardware configuration of the input unit 174 is similar to the hardware configuration of the input unit 164 in FIG. Display unit 175 displays images. The hardware configuration of the display unit 175 is similar to the hardware configuration of the display unit 165 in FIG. 14.

Continuing to refer to FIG. 16, the processing unit 171 will be described. The processing unit 171 acquires multiple pieces of learning data DT from the outside. For example, the processing unit 171 acquires multiple pieces of learning data DT from a simulation device or a learning data creation device via a network and the communication unit 173. The learning data creation device creates the learning data DT based on the data acquired from the simulation device.

The processing unit 171 controls the memory unit 172 to store each piece of learning data DT. As a result, the memory unit 172 stores each piece of learning data DT.

The memory unit 172 stores a learning program PG2. The learning program PG2 is a program for executing a machine learning algorithm to find certain rules from multiple pieces of learning data DT and generate a learned model LM that expresses the found rules.

The machine learning algorithm is not particularly limited, and may be, for example, a decision tree, a nearest neighbor method, a naive Bayes classifier, a support vector machine, or a neural network. Therefore, the trained model LM includes a decision tree, a nearest neighbor method, a naive Bayes classifier, a support vector machine, or a neural network. In the machine learning for generating the trained model LM, the backpropagation method may be used.

For example, the neural network includes an input layer, one or more intermediate layers, and an output layer. Specifically, the neural network is a deep neural network (DNN), a recurrent neural network (RNN), or a convolutional neural network (CNN), and performs deep learning. For example, the deep neural network includes an input layer, multiple intermediate layers, and an output layer.

The processing unit 171 performs machine learning on the plurality of learning data DT based on the learning program PG2. As a result, a certain rule is found from among the plurality of learning data DT, and a learned model LM is generated. That is, the learned model LM is constructed by performing machine learning on the learning data DT. The storage unit 172 stores the trained model LM.

Specifically, the processing unit 171 executes the learning program PG2 to find a certain rule between the explanatory variable and the objective variable included in the learning data DT, and generates the learned model LM.

More specifically, the processing unit 171 calculates a plurality of learned parameters by performing machine learning on the plurality of learning data DT based on the learning program PG2, and calculates one or more learned parameters to which the plurality of learned parameters are applied. Generate a trained model LM including the function. The learned parameters are parameters (coefficients) obtained based on the results of machine learning using a plurality of learning data DT.

The learned model LM causes the computer to function so as to input input information IF3 and output output information IF4. In other words, the trained model LM receives input information IF3 and outputs output information IF4. Specifically, the learned model LM estimates processing conditions such that the processing amount of the processing liquid LQ is uniform within the surface of the substrate W. The processing conditions include at least information indicating one or more processing liquid supply units An belonging to each group, and information indicating the timing at which each group should supply the processing liquid LQ.

Next, a learning method according to a fourth modification will be described with reference to FIGS. 16 and 17. FIG. 17 is a flowchart showing a learning method according to the fourth modification. As shown in FIG. 17, the learning method includes steps S31 to S34. The learning method is executed by the learning device 170.

As shown in FIGS. 16 and 17, in step S31, the processing unit 171 of the learning device 170 acquires a plurality of learning data DT from the simulation device or the learning data creation device.

Next, in step S32, the processing unit 171 performs machine learning on multiple pieces of learning data DT based on the learning program PG2.

Next, in step S33, the processing unit 171 determines whether the learning end condition is satisfied. The learning end condition is a predetermined condition for ending machine learning. The learning end condition is, for example, that the number of repetitions has reached a specified number.

If a negative determination is made in step S33, the process proceeds to step S31. As a result, machine learning is repeated.

On the other hand, if an affirmative determination is made in step S33, the process proceeds to step S34.

In step S34, the processing unit 171 outputs a model (one or more functions) to which the latest multiple parameters (coefficients), i.e., multiple learned parameters (coefficients), are applied as the learned model LM. Then, the memory unit 172 stores the learned model LM.

As described above, the learned model LM is generated by the learning device 170 executing steps S31 to S34.

That is, according to the fourth modification, the learning device 170 performs machine learning. Therefore, it is possible to find regularities from the learning data DT, which is very complex and has a huge amount of analysis targets, and to create a highly accurate trained model LM. Then, the control unit 161 of the control device 160 shown in FIG. 14 inputs the input information IF3 including the target value of processing amount to the trained model LM, and inputs the input information IF3 including the processing condition information from the trained model LM. Output the output information IF4. Therefore, the settings of each processing liquid supply section An can be executed at high speed, and the throughput when processing the substrate W can be improved.

Note that the control device 160 in FIG. 14 may operate as the learning device 170 in FIG. 16.

Next, a method for generating the learning data DT will be described in detail with reference to FIG. 9(a). Below, an example will be described in which a simulation device that executes a bubble behavior simulation generates the learning data DT. In addition, in the following description, the substrate W shown in FIG. 9(a) will be regarded as a "learning substrate Wa."

First, processing condition information Q2 is input to the simulation device. The processing condition information Q2 includes at least information indicating one or more learning processing liquid supply units belonging to each learning group, and information indicating the timing at which each learning group supplies the learning processing liquid.

Next, the simulation device simulates the behavior of the bubbles based on the processing condition information Q2. As a result, the simulation device outputs a simulation result showing the distribution of the bubbles.

Specifically, the following simulation results are output. That is, an area 16 having four monitoring points 12 as vertices is set on the learning board Wa shown in FIG. 9(a). As a result, a plurality of areas 16 are set on the learning board Wa. In the example of FIG. 9(a), the area 16 is a square. Further, one monitoring point 12 is associated with one area 16. For example, a monitoring point 12 located at the lower right corner of the square representing region 16 is associated with region 16 . Then, the cumulative value of the number of passing bubbles at the monitoring point 12 is treated as the cumulative value of the number of passing bubbles in the region 16 associated with the monitoring point 12. That is, each region 16 is assigned a cumulative value of the number of bubbles passing through. Therefore, the simulation device outputs the cumulative value of the number of bubbles passing through each region 16 as a simulation result.

The simulation device then uses a conversion function or conversion table to convert the cumulative number of passing bubbles into the amount of processing of the learning substrate Wa by the learning treatment liquid for each region 16. As a result, the amount of processing is obtained for each region 16 of the learning substrate Wa. That is, processing amount information Q1 indicating the distribution of the amount of processing within the surface of the learning substrate Wa is obtained. That is, the processing amount information Q1 is information indicating the amount of processing of each region 16 of the learning substrate Wa by the learning treatment liquid. The processing amount indicates, for example, the etching rate for each region 16 of the learning substrate Wa, the etching amount for each region 16 of the learning substrate Wa, or the thickness for each region 16 of the learning substrate Wa.

In addition, since there is a positive correlation (e.g., a directly proportional relationship) between the amount of bubbles and the processing volume (see Figures 3 and 4), a conversion function or conversion table is experimentally derived in advance.

Here, by inputting various pieces of processing condition information Q2 into the simulation device, a large number of simulation results are obtained. Then, a large number of pieces of processing amount information Q1 are obtained from the large number of simulation results.

The simulation device then acquires, from among the many pieces of processing amount information Q1, processing amount information Q1 in which the variation in processing amount for each region 16 is within a predetermined range, and processing condition information Q2 corresponding to the processing amount information Q1, as processing amount information IF1 and processing condition information IF2 of the learning data DT. For example, from among the many pieces of processing amount information Q1, the simulation device acquires, from among the many pieces of processing amount information Q1, processing amount information Q1 in which the standard deviation or variance of the processing amount for each region 16 is equal to or less than a threshold, and processing condition information Q2 corresponding to the processing amount information Q1, as processing amount information IF1 and processing condition information IF2 of the learning data DT.

The learning device 170 shown in FIG. 16 acquires a large number of learning data DT from the simulation device and learns the large number of learning data DT. Note that the learning data creation device may obtain the simulation results from the simulation device and create the learning data DT based on the simulation results.

As described above with reference to FIG. 9(a) and FIG. 16, in the fourth modification, learning data DT including throughput information IF1 with small variation in throughput within the plane of the learning substrate Wa is learned. By doing so, a trained model LM is generated. Therefore, by controlling each processing liquid supply unit An based on the output information IF4 obtained by inputting the input information IF3 to the learned model LM, the variation in the processing amount within the plane of the substrate W can be effectively suppressed. can.

Here, in detail, the input information IF3 includes information indicating a target value of the processing amount of each region 15 of the substrate W by the processing liquid LQ. The multiple regions 15 of the substrate W respectively correspond to the multiple regions 16 of the learning substrate Wa. The processing amount indicates, for example, the etching rate for each region 15 of the substrate W, the etching amount for each region 15 of the substrate W, or the thickness for each region 15 of the substrate W.

In the input information IF3, the target values of the processing amount in the plurality of regions 15 of the substrate W are set to the same value. This is to suppress variations in the amount of processing within the plane of the substrate W. Further, the target value of the processing amount in the input information IF3 may have a range defined by an upper limit value and a lower limit value.

Further, the output information IF4 includes at least information indicating one or more processing liquid supply units An belonging to each group, and information indicating the timing at which each group should supply the processing liquid LQ. In this case, "timing" includes the order of the groups and the implementation period of each group.

The processing amount information IF1 and the processing amount information Q1 may be the cumulative value of the number of bubbles passing through each region 16 of the learning substrate Wa. In this case, the input information IF3 is a target value for the cumulative value of the number of bubbles BB passing through each region 15 of the substrate W.

Further, the processing condition information IF2 and the processing condition information Q2 may include information on the flow rate of the learning processing liquid from the learning processing liquid supply section. In this case, the output information IF4 includes information on the flow rate of the processing liquid LQ from the processing liquid supply section An.

Furthermore, the processing condition information IF2 and the processing condition information Q2 may include one or more pieces of information on the type, concentration, and temperature of the learning processing liquid. In this case, the output information IF4 includes one or more pieces of information on the type, concentration, and temperature of the processing liquid LQ.

Furthermore, the processing condition information IF2 and the processing condition information Q2 may include one or more pieces of information on the diameter, thickness, and contact angle of the learning substrate Wa. In this case, the output information IF4 includes one or more pieces of information on the diameter, thickness, and contact angle of the substrate W.

Furthermore, the processing condition information IF2 and the processing condition information Q2 include the flow rate of the learning gas supplied to the learning bubble supply pipe, the interval between the learning bubble holes in the learning bubble supply pipe, and the manner in which the learning bubble supply pipe is used. The information may include one or more of the following information. In this case, the output information IF4 includes information on one or more of the flow rate of the gas GA supplied to the bubble supply pipe 1, the interval between the bubble holes 2 in the bubble supply pipe 1, and the usage mode of the bubble supply pipe 1.

Note that the learning bubble supply pipe is a virtual bubble supply pipe corresponding to the bubble supply pipe 1 of the first embodiment, and is used for learning in the bubble behavior simulation. The learning gas and the learning bubble hole are virtual gas and bubble holes corresponding to the gas GA and the bubble hole 2 of the first embodiment, and are used for learning in the bubble behavior simulation.

(Fifth modification)
A fifth modification of the first embodiment will be described with reference to FIGS. 18 to 20. In the fifth modification, a rinsing liquid is used as the processing liquid LQ. Hereinafter, the differences between the fifth modification example and the first embodiment will be mainly explained.

First, referring to the first reference example of FIG. 18 and the second reference example of FIG. 19, the tendency when replacing the chemical liquid on the substrate W with the rinse liquid will be described. In the fifth modified example, the first reference example, and the second reference example, the substrate W has a silicon substrate and a pattern. The silicon substrate has an approximately disk shape. The pattern is formed on the silicon substrate. The pattern includes a laminated film. The laminated film includes a plurality of polysilicon films and a plurality of silicon oxide films. The plurality of polysilicon films and the plurality of silicon oxide films are laminated along the thickness direction of the substrate W so that the polysilicon films and the silicon oxide films are alternately replaced. The thickness direction indicates a direction approximately perpendicular to the surface of the silicon substrate. In addition, BHF is used as the first chemical liquid 201, and TMAH is used as the second chemical liquid 211. The second chemical liquid 211 may contain TMAH and IPA. By containing IPA in the second chemical liquid 211, even if the recesses of the pattern of the substrate W are fine, the second chemical liquid 211 is easily permeated into the recesses.

First, the first reference example will be described with reference to FIG. 18. FIG. 18 is a diagram showing a substrate processing method according to the first reference example when the second chemical liquid 211 is replaced with the rinsing liquid 221. In the first reference example, the chemical processing using the second chemical liquid 211 and the rinsing processing using the rinsing liquid 221 are performed in the same tank (the second chemical liquid tank 210).

As shown in FIG. 18, the substrate processing method according to the first reference example includes steps S201 to S203.

First, in step S201, the substrate W is immersed in the first chemical solution 201 in the first chemical bath 200, and the substrate W is etched by the first chemical solution 201. Specifically, one or more recesses are formed in the laminated film of the substrate W using the first chemical solution 201 . The recess is, for example, a trench or a hole. The polysilicon film and the silicon oxide film are exposed in the recess. After etching in the first chemical bath 200, the substrate W is lifted from the first chemical bath 200 and transported to the second chemical bath 210.

Next, in step S202, the substrate W is immersed in the second chemical solution 211 in the second chemical bath 210, and the substrate W is etched by the second chemical solution 211. Specifically, the polysilicon film is etched in the recess formed in the laminated film of the substrate W using the second chemical solution 211 . More specifically, in the concave portion of the substrate W, the polysilicon film is etched in a direction substantially perpendicular to the thickness direction of the substrate W using the second chemical solution 211.

In detail, step S202 using the second chemical tank 210 includes steps S2021 to S2023.

First, in step S2021, the rinsing liquid 221 is stored in the second chemical liquid tank 210. Then, the substrate W is immersed in the rinsing liquid 221 in the second chemical liquid tank 210 and is rinsed with the rinsing liquid 221.

Next, in step S2022, the second chemical liquid 211 is supplied to the second chemical liquid tank 210 in which the rinsing liquid 221 is stored. In the example of FIG. 18, at time t1, the supply of the second chemical liquid 211 to the second chemical liquid tank 210 in which the rinsing liquid 221 is stored is started. As a result, the rinsing liquid 221 in the second chemical liquid tank 210 is gradually replaced by the second chemical liquid 211. Thus, the substrate W is etched by the second chemical liquid 211.

In this case, on the substrate W, the replacement of the rinsing liquid 221 with the second chemical liquid 211 progresses from the outer periphery of the substrate W toward the center of the substrate W. Therefore, in the plane of the substrate W, the substitution with the second chemical liquid 211 progresses faster in the outer region AR1 than in the inner region AR2 of the substrate W. As a result, the amount of etching in the outer region AR1 may be greater than the amount of etching in the inner region AR2. That is, the amount of etching in the inner region AR2 may be smaller than the amount of etching in the outer region AR1.

Thereafter, the rinse liquid 221 is replaced with the second chemical liquid 211 also in the inner region AR2. As a result, the entire in-plane area of the substrate W is etched by the second chemical solution 211.

Next, in step S2023, a rinsing liquid 221 is supplied to the second chemical tank 210 in which the second chemical liquid 211 is stored. In the example of FIG. 18, at time t2, the supply of the rinsing liquid 221 to the second chemical tank 210 in which the second chemical liquid 211 is stored is started. As a result, the second chemical liquid 211 in the second chemical tank 210 is gradually replaced by the rinsing liquid 221. Thus, the substrate W is rinsed with the rinsing liquid 221.

In this case, the replacement of the second chemical liquid 211 with the rinsing liquid 221 on the substrate W progresses from the outer periphery of the substrate W toward the center of the substrate W. Therefore, within the surface of the substrate W, the replacement of the second chemical liquid 211 with the rinsing liquid 221 progresses faster in the outer region AR1 than in the inner region AR2. As a result, the inner region AR2 may be etched by the second chemical liquid 211 remaining in the inner region AR2.

Thereafter, the second chemical solution 211 is replaced with the rinse liquid 221 also in the inner region AR2. As a result, the entire in-plane area of the substrate W is rinsed with the rinsing liquid 221.

As described above, in the chemical processing in step S2022, the amount of etching in the inner region AR2 of the substrate W may be less than the amount of etching in the outer region AR1. On the other hand, in the rinsing processing in step S2023, the inner region AR2 may be etched. As a result, the etching in step S2022 and the etching in step S2023 are complementary to each other. In other words, the inner region AR2, which was etched less in step S2022, is etched by the remaining second chemical liquid 211 in step S2023. Therefore, in step S202, the amount of etching is uniform across the entire surface of the substrate W.

The substrate W etched by the second chemical solution 211 is rinsed by the second chemical solution tank 210 and then pulled up from the second chemical solution tank 210 and transported to the drying tank 220 .

Next, in step S203, the substrate W is dried in the drying tank 220. Then, the substrate processing method according to the first reference example is completed.

As described above with reference to FIG. 18, in the first reference example, the rinsing process and the chemical process are performed in the same tank (second chemical tank 210). Therefore, the rinsing liquid 221 and the second chemical liquid 211 must be discarded each time processing of one lot (e.g., 25 or 50 substrates W) is completed. Therefore, in order to reuse the rinsing liquid 221 and the second chemical liquid 211 for multiple lots, the rinsing process and the chemical process are performed in different tanks.

Next, a second reference example will be described with reference to FIG. FIG. 19 is a diagram illustrating a substrate processing method according to a second reference example when replacing the second chemical solution 211 with a rinse liquid 241. In the second reference example, the chemical liquid treatment using the second chemical liquid 211 and the rinsing process using the rinsing liquid 241 are performed in different tanks (the second chemical liquid tank 210 and the second rinsing tank 240).

As shown in FIG. 19, the substrate processing method according to the second reference example includes steps S211 to S215.

First, in step S211, the substrate W is immersed in the first chemical liquid 201 in the first chemical liquid tank 200, and the substrate W is etched by the first chemical liquid 201. This is the same as step S201 in FIG. 18. After etching in the first chemical liquid tank 200, the substrate W is lifted out of the first chemical liquid tank 200 and transported to the first rinse tank 230.

Next, in step S212, the substrate W is immersed in the rinsing liquid 231 in the first rinsing tank 230, and the substrate W is rinsed with the rinsing liquid 231. After rinsing in the first rinsing tank 230, the substrate W is lifted out of the first rinsing tank 230 and transported to the second chemical liquid tank 210.

Next, in step S213, the substrate W is immersed in the second chemical liquid 211 in the second chemical liquid tank 210, and the substrate W is etched by the second chemical liquid 211. This is the same as step S202 in FIG. 18. However, in step S213, a rinse process is not performed in the second chemical liquid tank 210. That is, no rinse liquid is stored in the second chemical liquid tank 210, and only the second chemical liquid 211 is stored. Therefore, in step S213, the etching amount is uniform over the entire surface of the substrate W. After etching by the second chemical liquid 211 in the second chemical liquid tank 210, the substrate W is lifted from the second chemical liquid tank 210 and transported to the second rinse tank 240.

Next, in step S214, the substrate W is immersed in the rinsing liquid 241 of the second rinsing tank 240, and the substrate W is rinsed with the rinsing liquid 241.

Specifically, on the substrate W immersed in the rinsing liquid 241, the replacement of the second chemical liquid 211 with the rinsing liquid 241 progresses from the outer peripheral edge of the substrate W toward the center of the substrate W. Therefore, within the surface of the substrate W, the replacement of the second chemical liquid 211 with the rinsing liquid 241 progresses faster in the outer region AR1 than in the inner region AR2. As a result, the inner region AR2 may be etched by the second chemical liquid 211 remaining in the inner region AR2.

Then, in the inner region AR2, the second chemical liquid 211 is also replaced with the rinsing liquid 241. As a result, the entire surface of the substrate W is rinsed with the rinsing liquid 241.

After rinsing with the rinsing liquid 241 in the second rinsing tank 240, the substrate W is pulled up from the second rinsing tank 240 and transported to the drying tank 220.

Next, in step S215, the substrate W is dried in the drying tank 220. Then, the substrate processing method according to the second reference example ends.

As described above with reference to FIG. 19, in step S214, the inner region AR2 of the substrate W may be etched by the remaining second chemical solution 211, so that the etching amount is uniform within the surface of the substrate W. It may not be possible. In other words, there is a possibility that the etching amount becomes uneven within the plane of the substrate W.

In particular, the shorter the etching time with the second chemical liquid 211, the greater the impact of the remaining second chemical liquid 211 in the second rinse tank 240. This is because a short etching time indicates a high etching rate, and the remaining second chemical liquid 211 on the substrate W in the second rinse tank 240 causes the etching to proceed.

Therefore, in order to make the amount of etching uniform across the entire surface of the substrate W, the substrate processing apparatus 300 (FIG. 20) according to the fifth modified example of embodiment 1 includes the processing tank 110 and surrounding components of FIG. 1 instead of the second rinsing tank 240 of FIG. 19.

Figure 20 is a diagram showing a substrate processing method using a substrate processing apparatus 300 according to a fifth modified example of embodiment 1. As shown in Figure 20, the substrate processing apparatus 300 includes a first chemical tank 200, a first rinse tank 230, a second chemical tank 210, the processing tank 110 and peripheral members of Figure 1, and a drying tank 220. The peripheral members of the processing tank 110 include a processing liquid supply unit An and an air bubble supply unit 135. The air bubble supply unit 135 includes a plurality of air bubble supply pipes 1.

In the fifth modified example, the processing tank 110 stores a rinse liquid as the processing liquid LQ. In other words, the processing liquid LQ is a rinse liquid. Hereinafter, in the fifth modified example, the rinse liquid will be referred to as "rinse liquid 111." The first chemical tank 200, the first rinse tank 230, the second chemical tank 210, and the drying tank 220 are similar to the first chemical tank 200, the first rinse tank 230, the second chemical tank 210, and the drying tank 220, respectively, of the second reference example in FIG. 19, and therefore description thereof will be omitted.

The substrate processing method using the substrate processing apparatus 300 includes steps S301 to S305. Steps S301, S302, S303, and S305 are similar to steps S211, S212, S213, and S215, respectively, in the second reference example of FIG. 19, and therefore will not be described.

After etching with the second chemical 211 in the second chemical tank 210 in step S303 (that is, after being treated with the second chemical 211), the substrate W is pulled up from the second chemical tank 210 and transported to the processing tank 110.

Next, in step S304, the substrate W is immersed in the rinsing liquid 111 in the processing bath 110, and the substrate W is rinsed with the rinsing liquid 111.

Specifically, as shown in FIGS. 1 and 20, the substrate holding unit 120 processes the substrate W after being treated with the second chemical solution 211 stored in the second chemical solution tank 210 that is different from the processing tank 110. It is immersed in the rinse liquid 111 stored in the tank 110. In the fifth modification, the treatment using the second chemical solution 211 indicates etching using the second chemical solution 211. The second chemical tank 210 corresponds to an example of the "chemical tank" of the present invention. The second chemical liquid 211 corresponds to an example of the "chemical liquid" of the present invention.

The bubble supply unit 135 (bubble supply pipe 1) supplies multiple bubbles BB to the rinsing liquid 111 from below the substrate W. The behavior of the bubbles BB is controlled by supplying the rinsing liquid 111 from one or more processing liquid supply units An toward the bubbles BB. As a result, it is possible to prevent unevenness in the amount of bubbles BB on the surface of the substrate W and in its vicinity. In other words, it is possible to reduce areas where bubbles BB are insufficient on the surface of the substrate W and in its vicinity.

The plurality of bubbles BB (a large number of bubbles BB) promote the replacement of the second chemical solution 211 with the rinsing liquid 111 on the substrate W. Therefore, according to the fifth modification, the second chemical solution 211 is quickly replaced with the rinsing liquid 111 even in the inner region AR2 where the second chemical solution 211 remains more easily than in the outer region AR1 of the substrate W. As a result, compared to the case where bubbles BB are not supplied (for example, the second reference example shown in FIG. 19), the processing amount (for example, the etching amount) can be made substantially uniform over the entire surface of the substrate W. In other words, it is possible to suppress unevenness in the amount of processing (for example, the amount of etching) within the plane of the substrate W. In particular, compared to the case where no air bubbles BB are supplied, the replacement speed from the second chemical solution 211 to the rinsing liquid 111 can be increased over the entire surface area of the substrate W by using a plurality of air bubbles BB (a large number of air bubbles BB). can. In other words, the throughput of rinsing processing can be improved.

The reason why the bubbles BB promote the replacement of the second chemical liquid 211 with the rinsing liquid 111 on the substrate W (surface of the substrate W) is, for example, that the rising flow of the bubbles BB generates turbulence on the surface of the substrate W, making it easier for the second chemical liquid 211 on the surface of the substrate W to be replaced with the rinsing liquid 111. In other words, the rising flow of the bubbles BB generates turbulence on the surface of the substrate W, which can prevent the second chemical liquid 211 and the rinsing liquid 111 from stagnation on the surface of the substrate W. In other words, the rising flow of the bubbles BB can effectively send fresh rinsing liquid 111 to the surface of the substrate W.

The fifth modified example is also believed to be able to prevent unevenness in the processing amount (e.g., etching amount) within the surface of the substrate W for the following reason. That is, the uneven flow of the rinsing liquid 111 supplied from the processing liquid supply unit An within the processing tank 110 is rectified by the upward flow of multiple bubbles BB. As a result, it is believed that the efficiency of replacement of the second chemical liquid 211 with the rinsing liquid 111 is equivalent in the outer region AR1 and the inner region AR2 of the substrate W. This makes it possible to prevent unevenness in the processing amount within the surface of the substrate W.

Note that, for example, when the bubbles BB are not supplied, the flow in the processing tank 110 caused by the rinsing liquid 111 supplied from the processing liquid supply section An causes the rinsing liquid 111 to be distributed in the outer area AR1 of the substrate W than the inner area AR2. It may be easy to flow. Therefore, when the bubbles BB are not supplied, the second chemical solution 211 and the rinsing liquid 111 may tend to stay in the inner region AR2 of the substrate W. Therefore, in the fifth modification, by supplying the bubbles BB, the uneven flow in the processing tank 110 due to the rinsing liquid 111 supplied from the processing liquid supply section An is rectified by the upward flow of the plurality of bubbles BB. . As a result, it is considered that the replacement efficiency of the second chemical solution 211 to the rinsing liquid 111 becomes equal in the outer region AR1 and the inner region AR2 of the substrate W.

Furthermore, according to the fifth modified example, a rinse process using the rinse liquid 231 is performed in the first rinse tank 230, a chemical process using the second chemical liquid 211 is performed in the second chemical liquid tank 210, and a rinse process using the rinse liquid 111 is performed in the process tank 110. In other words, the rinse process and the chemical process are performed in different tanks. Therefore, it is not required to replace the rinse liquids 231, 111, and the second chemical liquid 211 for each lot. As a result, the amount of the rinse liquids 231, 111, and the second chemical liquid 211 used can be reduced compared to the first reference example (Figure 18). In other words, the rinse liquids 231, 111, and the second chemical liquid 211 can be reused. Therefore, the amount of the rinse liquids 231, 111, and the second chemical liquid 211 discarded can be reduced.

(Embodiment 2)
A substrate processing apparatus 300 according to a second embodiment of the present invention will be described with reference to Figures 21 to 25. The substrate processing apparatus 300 according to the second embodiment includes a fluid supply unit 155 and a fluid adjustment unit 145 instead of the bubble supply unit 135 and the bubble adjustment unit 140 in Figure 1. The following mainly describes the differences between the second embodiment and the first embodiment.

FIG. 21 is a schematic plan view showing a substrate processing apparatus 300 according to the second embodiment. The substrate processing apparatus 300 processes multiple lots. Each of the plurality of lots consists of a plurality of substrates W. As shown in FIG. 21, the substrate processing apparatus 300 includes a plurality of storage sections 21, an input section 23, a payout section 27, a delivery mechanism 31, a buffer unit BU, a transport mechanism CV, a processing section SP1, A control device 160 is provided. The control device 160 (control unit 161) controls the storage unit 21, the input unit 23, the payout unit 27, the delivery mechanism 31, the buffer unit BU, the transport mechanism CV, and the processing unit SP1. The processing section SP1 includes a plurality of tanks TA. The transport mechanism CV includes a first transport mechanism CTC, a second transport mechanism WTR, a sub-transport mechanism LF1, a sub-transport mechanism LF2, and a sub-transport mechanism LF3.

The processing section SP1 includes a drying processing section 37, a first processing section 39, a second processing section 40, and a third processing section 41. The drying processing section 37 includes a tank LPD1 and a tank LPD2 of the plurality of tanks TA. The first processing section 39 includes a tank ONB1 and a tank CHB1 of the plurality of tanks TA. The second processing unit 40 includes a tank ONB2 and a tank CHB2 of the plurality of tanks TA. The third processing section 41 includes a tank ONB3 and a tank CHB3 of the plurality of tanks TA.

Each of the plurality of storage parts 21 accommodates a plurality of substrates W. Each substrate W is accommodated in the storage section 21 in a horizontal position. The storage unit 21 is, for example, a FOUP (Front Opening Unified Pod).

The storage section 21 that stores unprocessed substrates W is placed on the input section 23 . Specifically, the input section 23 includes a plurality of mounting tables 25 . The two storage units 21 are placed on the two mounting tables 25, respectively. The input unit 23 is arranged at one end of the substrate processing apparatus 300 in the longitudinal direction.

The storage section 21 that stores the processed substrates W is placed on the discharge section 27. Specifically, the discharge section 27 includes a plurality of mounting tables 29. The two storage sections 21 are placed on the two mounting tables 29, respectively. The discharge section 27 stores the processed substrates W in the storage section 21 and discharges the storage section 21 together. The discharge section 27 is disposed at one end of the longitudinal direction of the substrate processing apparatus 300. The discharge section 27 faces the input section 23 in a direction perpendicular to the longitudinal direction of the substrate processing apparatus 300.

The buffer unit BU is arranged adjacent to the input section 23 and the payout section 27. The buffer unit BU takes in the storage section 21 placed on the input section 23 along with the substrates W, and places the storage section 21 on a shelf (not shown). Further, the buffer unit BU receives the processed substrate W and stores it in the storage section 21, and also places the storage section 21 on a shelf. A delivery mechanism 31 is arranged within the buffer unit BU.

The delivery mechanism 31 delivers the storage section 21 between the loading section 23, the dispensing section 27, and the shelf. Further, the transfer mechanism 31 transfers only the substrate W between the transfer mechanism 31 and the transport mechanism CV. Specifically, the delivery mechanism 31 transfers lots between the delivery mechanism 31 and the transport mechanism CV. The transport mechanism CV carries the lots into and out of the processing section SP1. Specifically, the transport mechanism CV carries the lots into and out of each tank TA of the processing section SP1. The processing unit SP1 processes each substrate W of the lot.

Specifically, the transfer mechanism 31 transfers the lot between the transfer mechanism 31 and the first transport mechanism CTC of the transport mechanism CV. The first transport mechanism CTC converts the orientation of the multiple substrates W of the lot received from the transfer mechanism 31 from a horizontal orientation to a vertical orientation, and then transfers the lot to the second transport mechanism WTR. In addition, after receiving a processed lot from the second transport mechanism WTR, the first transport mechanism CTC converts the orientation of the multiple substrates W of the lot from a vertical orientation to a horizontal orientation, and then transfers the lot to the transfer mechanism 31.

The second transport mechanism WTR is movable along the longitudinal direction of the substrate processing apparatus 300 from the drying processing section 37 of the processing section SP1 to the third processing section 41. Therefore, the second transport mechanism WTR carries the lots into and out of the drying processing section 37, first processing section 39, second processing section 40, and third processing section 41.

The drying processing section 37 performs drying processing on the lot. Specifically, each of tank LPD1 and tank LPD2 of drying processing section 37 stores a lot and performs drying processing on a plurality of substrates W of the lot. The second transport mechanism WTR carries in and out lots into and out of each of tank LPD1 and tank LPD2.

The first processing unit 39 is disposed adjacent to the drying processing unit 37. The tank ONB1 of the first processing unit 39 performs, for example, a rinse process using a rinse liquid on multiple substrates W in a lot. The tank CHB1 performs, for example, a process using a chemical liquid (e.g., an etching process) on multiple substrates W in a lot.

The sub-transport mechanism LF1 of the transport mechanism CV not only transports the lot within the first processing section 39, but also transfers the lot to and from the second transport mechanism WTR. Further, the sub-transport mechanism LF1 immerses the lot in the tank ONB1 or CHB1, or pulls the lot out of the tank ONB1 or CHB1.

The second processing section 40 is disposed adjacent to the first processing section 39. The tank ONB2 of the second processing section 40 has a similar configuration to the tank ONB1, and performs the same processing as the tank ONB1. The tank CHB2 has a similar configuration to the tank CHB1, and performs the same processing as the tank CHB1. In addition to transporting the lot within the second processing section 40, the sub-transport mechanism LF2 of the transport mechanism CV transfers the lot to and from the second transport mechanism WTR. The sub-transport mechanism LF2 also immerses the lot in the tank ONB2 or tank CHB2, and lifts the lot from the tank ONB2 or tank CHB2.

A third processing section 41 is arranged adjacent to the second processing section 40 . Tank ONB3 of the third processing unit 41 has the same configuration as tank ONB1, and performs the same processing as tank ONB1. Tank CHB3 has the same configuration as tank CHB1, and performs the same processing as tank CHB1. The sub-transport mechanism LF3 of the transport mechanism CV not only transports the lot within the third processing section 41, but also transfers the lot to and from the second transport mechanism WTR. Further, the sub-transport mechanism LF3 immerses the lot in the tank ONB3 or CHB3 or pulls the lot out of the tank ONB3 or CHB3.

Hereinafter, in the second embodiment, the tanks LPD1 and LPD2 will be referred to as drying tanks LPD1 and LPD2. The tank ONB1 will be referred to as a first rinsing tank ONB1, the tank ONB2 will be referred to as a second rinsing tank ONB2, and the tank ONB3 will be referred to as a third rinsing tank ONB3. The tank CHB1 will be referred to as a first chemical tank CHB1, the tank CHB2 will be referred to as a second chemical tank CHB2, and the tank CHB3 will be referred to as a third chemical tank CHB3.

A first chemical solution is stored in the first chemical solution tank CHB1. The first chemical solution is, for example, BHF. A second chemical solution is stored in the second chemical solution tank CHB2. The second chemical solution is, for example, TMAH. Note that the second chemical solution may contain TMAH and IPA. The second chemical tank CHB2 corresponds to an example of the "chemical tank" of the present invention. The second chemical liquid corresponds to an example of the "chemical liquid" of the present invention. The second rinsing tank ONB2 corresponds to an example of the "rinsing tank" of the present invention.

Next, the second rinsing tank ONB2 will be explained with reference to FIG. 22. FIG. 22 is a schematic cross-sectional view showing the second rinsing tank ONB2. As shown in FIG. 22, the configuration of the second processing section 40 of the substrate processing apparatus 300 is similar to the configuration of the substrate processing apparatus 100 of FIG. However, the second processing section 40 includes a fluid supply section 155 instead of the bubble supply section 135 in FIG. Further, the second processing section 40 includes a fluid adjustment section 145 instead of the bubble adjustment section 140 in FIG. Furthermore, the second processing section 40 includes a second rinsing tank ONB2 instead of the processing tank 110 in FIG. The configuration of the second rinsing tank ONB2 is similar to the configuration of the processing tank 110 in FIG. 1.

In the second embodiment, the processing liquid LQ is a rinsing liquid. Hereinafter, the rinsing liquid as the processing liquid LQ will be referred to as "rinsing liquid 111." The second rinsing tank ONB2 stores the rinsing liquid 111. The second rinsing tank ONB2 includes a first side wall 116 and a second side wall 117 facing each other.

The processing liquid supply unit An supplies the rinsing liquid 111 to the inside of the second rinse tank ONB2 (specifically, the inner tank 112). Therefore, in the second embodiment, the processing liquid flow rate adjustment unit 130 adjusts the flow rate of the rinsing liquid 111 supplied to the processing liquid supply unit An for each processing liquid supply unit An. The processing liquid supply unit An is disposed in the second rinse tank ONB2. Otherwise, the operation of the processing liquid supply unit An and the processing liquid flow rate adjustment unit 130 according to the second embodiment is similar to the operation of the processing liquid supply unit An and the processing liquid flow rate adjustment unit 130 according to the first embodiment.

The processing liquid supply unit An corresponds to an example of a "rinse liquid supply unit" in the present invention. In addition, in the second embodiment, the processing liquid flow rate adjustment unit 130 can be considered as a "rinse liquid flow rate adjustment unit."

Specifically, the multiple processing liquid supply units An include at least one first processing liquid supply unit An. In the second embodiment, the multiple processing liquid supply units An include two or more first processing liquid supply units An (A1 to A3). The first processing liquid supply units An (A1 to A3) are arranged on the side of the first side wall 116 and supply the rinse liquid 111 to the inside of the second rinse tank ONB2. The multiple processing liquid supply units An include at least one second processing liquid supply unit An. In the second embodiment, the multiple processing liquid supply units An include two or more second processing liquid supply units An (A4 to A6). The second processing liquid supply units An (A4 to A6) are arranged on the side of the second side wall 117 and supply the rinse liquid 111 to the inside of the second rinse tank ONB2. The first processing liquid supply units An (A1 to A3) correspond to an example of a "first rinse liquid supply unit" in the present invention. The second processing liquid supply unit An (A4 to A6) corresponds to an example of the "second rinsing liquid supply unit" of the present invention.

The substrate holding unit 120 holds the substrate W and immerses the substrate W in the rinsing liquid 111 stored in the second rinsing tank ONB2. Note that the sub-transport mechanism LF2 includes a substrate holding section 120 and a lifting unit 126. Furthermore, the configurations of the sub-transport mechanisms LF1 and LF3 are similar to the configuration of the sub-transport mechanism LF2.

The fluid supply unit 155 is disposed inside the second chemical liquid tank CHB2. The fluid supply unit 155 supplies the fluid FL supplied from the fluid adjustment unit 145 into the rinsing liquid 111 in the second chemical liquid tank CHB2. The fluid FL is a liquid or a gas. When the fluid FL is a liquid, the fluid FL is, for example, a rinsing liquid. When the fluid FL is a gas, the gas is, for example, an inert gas. The inert gas is, for example, nitrogen or argon. Note that when the fluid FL is a gas, the fluid supply unit 155 is similar to the bubble supply unit 135 in FIG. 1.

The fluid supply unit 155 includes at least one fluid supply pipe 1A. In embodiment 2, the fluid supply unit 155 includes multiple fluid supply pipes 1A. In the example of FIG. 22, the fluid supply unit 155 includes six fluid supply pipes 1A. Note that the number of fluid supply pipes 1A is not particularly limited. The material of the fluid supply pipe 1A is the same as the material of the bubble supply pipe 1 in FIG. 1.

The configuration of the fluid supply pipe 1A is similar to the configuration of the bubble supply pipe 1 in FIG. 1. Specifically, each of the multiple fluid supply pipes 1A has multiple fluid holes 2A. In the example of FIG. 22, the fluid holes 2A face upward along the vertical direction D. The fluid supply pipe 1A supplies the fluid FL into the rinsing liquid 111 by discharging the fluid FL supplied from the fluid adjustment unit 145 from the fluid holes 2A.

The multiple fluid supply pipes 1A are arranged substantially parallel to each other and spaced apart in a plan view. Otherwise, the arrangement of the multiple fluid supply pipes 1A is the same as the arrangement of the multiple bubble supply pipes 1 in Figures 1 and 2. Also, in each of the multiple fluid supply pipes 1A, the multiple fluid holes 2A are arranged substantially in a straight line at intervals in the extension direction of the fluid supply pipe 1A. Otherwise, the configuration and arrangement of the fluid holes 2A are the same as the configuration and arrangement of the bubble holes 2 in Figures 1 and 2.

Specifically, each of the plurality of fluid supply pipes 1A supplies the fluid FL from each of the plurality of fluid holes 2A to the rinsing liquid 111 from below the substrate W when the substrate W is immersed in the rinsing liquid 111. supply

The fluid adjustment unit 145 adjusts the amount of fluid FL supplied to the rinse liquid 111 by adjusting the flow rate of the fluid FL supplied to the fluid supply pipe 1A for each fluid supply pipe 1A. Adjustment of the flow rate of the fluid FL includes keeping the flow rate of the fluid FL constant, increasing the flow rate of the fluid FL, decreasing the flow rate of the fluid FL, and making the flow rate of the fluid FL zero. In the second embodiment, the fluid adjustment unit 145 switches between supplying and stopping the supply of the fluid FL to the fluid supply pipe 1A for each fluid supply pipe 1A. Note that when the fluid FL is a gas, the fluid adjustment unit 145 is similar to the bubble adjustment unit 140 in FIG. 1.

The fluid adjustment unit 145 includes a plurality of fluid adjustment mechanisms 147 corresponding to the plurality of fluid supply pipes 1A, respectively. Further, the plurality of supply pipes P4 are provided corresponding to the plurality of fluid adjustment mechanisms 147, respectively. One end of the supply pipe P4 is connected to the corresponding fluid supply pipe 1A. The other end of the supply pipe P4 is connected to the common pipe P3. Common pipe P3 is connected to fluid supply source TKC.

The multiple fluid adjustment mechanisms 147 are respectively arranged on the multiple supply pipes P4. The fluid adjustment mechanisms 147 supply the fluid FL supplied from the fluid supply source TKC and the common pipe P3 to the corresponding fluid supply pipe 1A through the corresponding supply pipe P4. The fluid adjustment mechanisms 147 also adjust the flow rate of the fluid FL supplied to the corresponding fluid supply pipe 1A. As a result, the amount of fluid FL supplied to the rinsing liquid 111 is adjusted for each fluid supply pipe 1A. In the second embodiment, the fluid adjustment mechanisms 147 switch between supplying and stopping the supply of the fluid FL to the corresponding fluid supply pipe 1A.

The fluid adjustment mechanism 147 has a configuration similar to that of the bubble adjustment mechanism 142 in FIG. 2. For example, the fluid adjustment mechanism 147 includes a flow rate adjustment valve, a flow meter, a filter, and a valve. Note that, for example, the fluid adjustment mechanism 147 may include a mass flow controller instead of the flow rate adjustment valve and the flow meter.

The control device 160 (control unit 161) controls each configuration of the second processing unit 40 and each configuration of the sub-transport mechanism LF2.

Next, the second chemical tank CHB2 will be described with reference to FIG. 23. FIG. 23 is a schematic cross-sectional view showing the second chemical tank CHB2. As shown in FIG. 23, the second processing unit 40 includes the second chemical tank CHB2, a chemical introduction unit 425, a drainage unit 470, a bubble adjustment unit 480, and a bubble supply unit 400. The second chemical tank CHB2 includes an inner tank 405 and an outer tank 410.

The second chemical liquid tank CHB2 stores the second chemical liquid LQB. Specifically, the inner tank 405 stores the second chemical liquid LQB in which multiple substrates W are immersed. The outer tank 410 is disposed outside the inner tank 405 and surrounds the inner tank 405. The second chemical liquid LQB stored in the inner tank 405 that overflows from the inner tank 405 flows into the outer tank 410.

The sub-transport mechanism LF2 includes a substrate holding section 120 and a lifting unit 126. The substrate holding unit 120 immerses a plurality of substrates W arranged at intervals in the second chemical solution LQB stored in the inner tank 405. As a result, the substrate W is treated with the second chemical liquid LQB.

The bubble supply unit 400 supplies the gas GA1 to the second chemical liquid LQB stored in the inner tank 405. Gas GA1 is, for example, an inert gas. The inert gas is, for example, nitrogen or argon. Specifically, the bubble supply unit 400 supplies bubbles BB1 of the gas GA1 to the second chemical liquid LQB stored in the inner tank 405.

In detail, the air bubble supply unit 400 is disposed inside the inner tank 405. The air bubble supply unit 400 includes at least one air bubble supply pipe 51. In the second embodiment, the air bubble supply unit 400 includes a plurality of air bubble supply pipes 51. The plurality of air bubble supply pipes 51 are disposed on the bottom side of the inner tank 405. Each of the plurality of air bubble supply pipes 51 has a plurality of air bubble holes H1.

Each of the plurality of bubble supply pipes 51 supplies bubbles BB1 from each bubble hole H1 to the second chemical liquid LQB by discharging gas GA1 from each of the plurality of bubble holes H1. The bubble supply pipe 51 is, for example, a bubbler pipe.

The bubble adjustment unit 480 is capable of adjusting the flow rate of the gas GA1 supplied to the bubble supply unit 400. Specifically, the bubble adjustment unit 480 is capable of adjusting the amount of bubbles BB1 that the bubble supply unit 400 supplies to the second chemical liquid LQB by adjusting the flow rate of the gas GA1 supplied to the bubble supply unit 400.

Specifically, the bubble adjustment unit 480 supplies the gas GA1 supplied from the gas supply source TKD to the plurality of bubble supply pipes 51 from the plurality of supply pipes 481, respectively. More specifically, the bubble adjustment section 480 includes a plurality of bubble adjustment mechanisms 482. The bubble adjustment mechanism 482 supplies the gas GA1 to the corresponding bubble supply pipe 51 via the corresponding supply pipe 481. Further, the bubble adjustment mechanism 482 can adjust the flow rate of the gas GA1 supplied to the corresponding bubble supply pipe 51.

In other respects, the configuration and operation of the bubble adjustment section 480 are similar to the configuration and operation of the bubble adjustment section 140 in FIG. The configuration and operation of the bubble adjustment mechanism 482 are similar to the configuration and operation of the bubble adjustment mechanism 142 in FIG. Further, the configuration and operation of the bubble supply section 400 are similar to the configuration and operation of the bubble supply section 135 in FIG. 1. The configuration and operation of the bubble supply pipe 51 are similar to the configuration and operation of the bubble supply pipe 1 in FIG.

The chemical liquid introducing section 425 introduces the second chemical liquid LQB stored in the outer tank 410 into the inner tank 405. As a result, the second chemical solution LQB is circulated between the inner tank 405 and the outer tank 410.

The drug solution introduction section 425 includes an introduction section 430 and a circulation section 440.

The introduction section 430 introduces the second chemical solution LQB into the inner tank 405. The introduction section 430 is arranged below the bubble supply section 400 (specifically, the bubble supply pipe 51) inside the inner tank 405.

Specifically, introduction portion 430 includes plate 42 . The plate 42 divides the inside of the inner tank 405 to form a processing chamber 413 and an introduction chamber 415. The processing chamber 413 is a chamber above the plate 42 inside the inner tank 405. The introduction chamber 415 is a chamber below the plate 42 inside the inner tank 405.

The plate 42 has a plurality of chemical liquid holes P. The chemical solution holes P are arranged on the entire surface of the plate 42. The plurality of bubble supply pipes 51 are arranged above the plate 42 and below the substrate W inside the inner tank 405.

When the second chemical liquid LQB is stored in the inner tank 405, the introduction section 430 introduces the second chemical liquid LQB upward from the multiple chemical liquid holes P into the inner tank 405. Therefore, the introduction section 430 can generate a laminar flow of the second chemical liquid LQB supplied from the circulation section 440. The laminar flow of the second chemical liquid LQB flows upward from the multiple chemical liquid holes P along the approximately vertical direction D.

Specifically, the introduction section 430 includes at least one discharge section 431 and at least one dispersion plate 432. The discharge part 431 is, for example, a nozzle or a tube. The dispersion plate 432 has, for example, a substantially flat plate shape. The discharge part 431 and the dispersion plate 432 are arranged in the introduction chamber 415.

The discharge section 431 discharges the second chemical liquid LQB supplied from the circulation section 440 toward the dispersion plate 432 . Therefore, the second chemical liquid LQB hits the dispersion plate 432, and the pressure of the second chemical liquid LQB is dispersed by the dispersion plate 432. Then, the second chemical liquid LQB whose pressure is dispersed by the dispersion plate 432 spreads in the introduction chamber 415 in a substantially horizontal direction. Further, the second chemical liquid LQB is supplied to the processing chamber 413 as a laminar flow upward from each chemical liquid hole P of the plate 42 .

The circulation section 440 circulates the second chemical solution LQB in the inner tank 405 by supplying the second chemical solution LQB that has overflowed from the inner tank 405 and flowed into the outer tank 410 to the introduction section 430 .

Specifically, the circulation section 440 includes a circulation pipe 441, a pump 442, a heater 443, a filter 444, an adjustment valve 445, and a valve 446.

The circulation pipe 441 connects the outer tank 410 and the inner tank 405. The circulation pipe 441 guides the second chemical liquid LQB that has overflowed from the inner tank 405 and flowed into the outer tank 410 back to the inner tank 405. The introduction section 430 (specifically, the discharge section 431) is connected to the downstream end of the circulation pipe 441.

The pump 442 pumps the second chemical liquid LQB from the outer tank 410 toward the inner tank 405 via the circulation pipe 441. The discharge unit 431 discharges the second chemical liquid LQB supplied from the circulation pipe 441. The filter 444 filters the second chemical liquid LQB flowing through the circulation pipe 441.

The heater 443 heats the second chemical liquid LQB flowing through the circulation pipe 441. The adjustment valve 445 adjusts the flow rate of the second chemical liquid LQB supplied to the discharge part 431 by controlling the opening degree of the adjustment valve 445. A valve 446 opens and closes the circulation pipe 441. The liquid drain section 470 drains the second chemical liquid LQB from the inner tank 405. The drain section 470 includes a drain pipe 170a and a valve 170b. The control device 160 (control unit 161) controls each configuration of the second processing unit 40 and each configuration of the sub-transport mechanism LF2.

Next, a substrate processing method executed by the substrate processing apparatus 300 will be described with reference to FIGS. 21 to 25. FIG. 24 is a flowchart showing a substrate processing method according to the second embodiment. As shown in FIG. 24, the substrate processing method includes steps S100 to S500. Steps S100 to S500 are executed under the control of the control unit 161.

As shown in Figures 21 and 24, first, in step S100, the sub-transport mechanism LF1 (substrate holder) immerses multiple substrates W in the first chemical liquid stored in the first chemical liquid tank CHB1. As a result, the substrates W are treated with the first chemical liquid. That is, the first processing unit 39 treats the substrates W with the first chemical liquid stored in the first chemical liquid tank CHB1. Then, when the treatment in the first chemical liquid tank CHB1 is completed, the sub-transport mechanism LF1 (substrate holder) lifts the multiple substrates W out of the first chemical liquid in the first chemical liquid tank CHB1.

Next, in step S200, the sub-transport mechanism LF1 (substrate holder) immerses multiple substrates W in the rinse liquid stored in the first rinse tank ONB1. As a result, the substrates W are rinsed by the rinse liquid. That is, the first processing unit 39 rinses the substrates W with the rinse liquid stored in the first rinse tank ONB1. Then, when the rinse process in the first rinse tank ONB1 is completed, the sub-transport mechanism LF1 (substrate holder) lifts the multiple substrates W out of the rinse liquid in the first rinse tank ONB1. Furthermore, the second transport mechanism WTR transports the substrates W from the first processing unit 39 to the second processing unit 40 and hands over the substrates W to the sub-transport mechanism LF2.

Next, in step S300, the sub-transport mechanism LF2 (substrate holder 120) immerses the plurality of substrates W in the second chemical liquid LQB stored in the second chemical liquid tank CHB2. As a result, the substrate W is processed by the second chemical liquid LQB. That is, the second processing unit 40 processes the substrate W using the second chemical liquid LQB stored in the second chemical liquid tank CHB2. Then, when the processing by the second chemical tank CHB2 is completed, the sub-transport mechanism LF2 (substrate holding section 120) pulls up the plurality of substrates W from the second chemical liquid LQB of the second chemical tank CHB2.

Next, in step S400, the sub-transport mechanism LF2 (substrate holder 120) immerses the plurality of substrates W in the rinsing liquid 111 stored in the second rinsing tank ONB2. As a result, the substrate W is rinsed with the rinse liquid 111. That is, the second processing unit 40 rinses the substrate W with the rinse liquid 111 stored in the second rinse tank ONB2. Then, when the rinsing process by the second rinsing tank ONB2 is completed, the sub-transport mechanism LF2 (substrate holding section 120) pulls up the plurality of substrates W from the rinsing liquid 111 of the second rinsing tank ONB2. Further, the second transport mechanism WTR transports the substrate W from the second processing section 40 to the drying tank LPD2.

Next, in step S500, the drying tank LPD2 dries the multiple substrates W. When drying by the drying tank LPD2 is completed, the second transport mechanism WTR removes the multiple substrates W from the drying tank LPD2. Then, the substrate processing method is completed.

Figure 25 is a flow chart showing the details of step S400 in Figure 24. That is, Figure 25 shows the rinsing process of the substrate W by the second rinsing tank ONB2. As shown in Figure 25, the rinsing process of the substrate W by the second rinsing tank ONB2 (step S400 in Figure 24) includes steps S1A to S6A. Steps S1A to S6A are performed under the control of the control unit 161. In the explanation of the substrate processing method, a first group G1 to an Mth group GM are set for the second rinsing tank ONB2. "M" is an integer equal to or greater than 2.

As shown in Figures 22 and 25, first, in step S1A, each fluid supply pipe 1A of the fluid supply unit 155 starts supplying fluid FL to the rinsing liquid 111 stored in the second rinsing tank ONB2 from below the substrate W. Step S1A corresponds to an example of the "fluid supply step" of the present invention.

Next, in step S2A, the supply of rinsing liquid 111 is started from all processing liquid supply units An toward the rinsing liquid 111 stored in the second rinsing tank ONB2.

Next, in step S3A, the substrate holder 120 immerses the substrate W, which has been processed with the second chemical liquid LQB stored in a second chemical liquid tank CHB2 separate from the second rinse tank ONB2, in the rinse liquid 111 stored in the second rinse tank ONB2. Step S3A corresponds to an example of the "immersion step" of the present invention.

Next, in step S4A, the rinsing liquid 111 is supplied into the second rinsing tank ONB2 from one or more processing liquid supply parts An while switching the processing liquid supply parts An. Step S4A corresponds to an example of the "rinsing liquid supply step" of the present invention.

Specifically, step S4A includes steps S41, S42, S43, S44, ..., S4M. First, in step S41, the processing liquid supply unit An belonging to the first group G1 supplies the rinse liquid 111 toward the inside of the second rinse tank ONB2. Next, in step S42, the processing liquid supply unit An belonging to the second group G2 supplies the rinse liquid 111 toward the inside of the second rinse tank ONB2. Thereafter, steps S43, S44, ..., S4M are executed in sequence. In step S4M, the processing liquid supply unit An belonging to the Mth group GM supplies the rinse liquid 111 toward the inside of the second rinse tank ONB2. In this way, in step S4A, the processing liquid supply units An belonging to the groups supply the rinse liquid 111 for periods that differ for each group.

Next, in step S5A, supply of the rinsing liquid 111 from all the processing liquid supply units An to the rinsing liquid 111 stored in the second rinsing tank ONB2 is started.

Next, in step S6A, the substrate holding unit 120 pulls up the substrate W from the rinsing liquid 111. Then, the substrate processing method ends.

As described above with reference to FIG. 25, according to the second embodiment, the rinse liquid 111 is supplied from one or more processing liquid supply units An to the inside of the second rinse tank ONB2 (step S4A). Furthermore, the fluid supply unit 155 supplies the fluid FL to the rinse liquid 111 from below the substrate W (step S1A). Specifically, each of the multiple fluid supply pipes 1A supplies the fluid FL to the rinse liquid 111 in the second rinse tank ONB2. Furthermore, in each of the multiple fluid supply pipes 1A, each of the multiple fluid holes 2A supplies the fluid FL to the rinse liquid 111 in the second rinse tank ONB2. In this way, the fluid FL is supplied toward the rinse liquid 111 from different positions on the bottom side of the second rinse tank ONB2.

The fluid FL promotes replacement of the second chemical liquid LQB remaining on the substrate W with the rinsing liquid 111. Therefore, according to the second embodiment, the second chemical liquid LQB is quickly replaced with the rinsing liquid 111 even in the inner region AR2 where the second chemical liquid LQB is more likely to remain than in the outer region AR1 (FIG. 20) of the substrate W. As a result, compared to the case where the fluid FL is not supplied (for example, the second reference example shown in FIG. 19), the processing amount (for example, the etching amount) can be made substantially uniform over the entire surface of the substrate W. In other words, it is possible to suppress unevenness in the amount of processing (for example, the amount of etching) within the plane of the substrate W. In particular, compared to the case where the fluid FL is not supplied, the fluid FL supplied from a different position on the bottom side of the second rinsing tank ONB2 causes the flow from the second chemical solution LQB to the rinsing liquid 111 over the entire surface of the substrate W. The replacement speed can be increased. In other words, the throughput of rinsing processing can be improved.

The reason why the fluid FL promotes the replacement of the second chemical liquid LQB with the rinsing liquid 111 on the substrate W (surface of the substrate W) is, for example, that the upward flow of the fluid FL generates turbulence on the surface of the substrate W, making it easier for the second chemical liquid LQB on the surface of the substrate W to be replaced with the rinsing liquid 111. In other words, the upward flow of the fluid FL generates turbulence on the surface of the substrate W, which can prevent the second chemical liquid LQB and the rinsing liquid 111 from stagnation on the surface of the substrate W.

In particular, when the fluid FL is a rinsing liquid, the replacement with the rinsing liquid is more effectively carried out. That is, it is believed that the upward flow of the fluid FL, which is the rinsing liquid, generates a turbulent flow of the rinsing liquid on the surface of the substrate W, making it easier for the second chemical liquid LQB on the surface of the substrate W to be replaced with the rinsing liquid. In other words, the upward flow of the fluid FL, which is the rinsing liquid, generates a turbulent flow of the rinsing liquid on the surface of the substrate W, further preventing the second chemical liquid LQB and the rinsing liquid from stagnating on the surface of the substrate W. In addition, the upward flow of the fluid FL, which is the rinsing liquid, can effectively send fresh rinsing liquid to the surface of the substrate W.

When the fluid FL is a gas, the replacement of the second chemical liquid LQB with the rinsing liquid 111 can be promoted more effectively than when the fluid FL is a liquid. This is because when the fluid FL is a gas, the fluid FL rises faster and turbulence can be generated more effectively than when the fluid FL is a liquid.

Further, in the second embodiment, the following may be considered as a reason why the occurrence of unevenness in the amount of processing (for example, the amount of etching) within the plane of the substrate W can be suppressed. That is, the uneven flow in the processing tank 110 due to the rinsing liquid 111 supplied from the processing liquid supply section An is rectified by the upward flow of the fluid FL supplied from different positions on the bottom side of the second rinsing tank ONB2. . As a result, it is considered that the replacement efficiency of the second chemical solution LQB to the rinsing liquid 111 becomes equal in the outer region AR1 (FIG. 20) and the inner region AR2 (FIG. 20) of the substrate W. Therefore, it is possible to suppress unevenness in the amount of processing within the plane of the substrate W.

Note that, for example, when the fluid FL is not supplied, the rinsing liquid 111 flows from the inner region AR2 (FIG. 20) of the substrate W due to the flow in the processing tank 110 caused by the rinsing liquid 111 supplied from the processing liquid supply section An. In some cases, the liquid may also easily flow to the outer region AR1 (FIG. 20). Therefore, when the fluid FL is not supplied, the second chemical liquid LQB and the rinsing liquid 111 may tend to stay in the inner region AR2 of the substrate W. Therefore, in the second embodiment, by supplying the fluid FL from different positions on the bottom side of the second rinsing tank ONB2, the non-uniform flow in the processing tank 110 due to the rinsing liquid 111 supplied from the processing liquid supply section An is prevented. It is rectified by the upward flow of the fluid FL. As a result, it is considered that the replacement efficiency of the second chemical solution LQB to the rinsing liquid 111 becomes equal in the outer region AR1 and the inner region AR2 of the substrate W.

Further, according to the second embodiment, the first rinsing tank ONB1 performs a rinsing process using a rinsing liquid (hereinafter referred to as "rinsing liquid RN"), the second chemical tank CHB2 performs a chemical process using a second chemical liquid LQB, A rinsing process using a rinsing liquid 111 is performed in the second rinsing tank ONB2. That is, the rinsing process and the chemical liquid process are performed in different tanks. Therefore, it is not required to replace the rinse liquid RN, the rinse liquid 111, and the second chemical liquid LQB for each lot. As a result, compared to the first reference example (FIG. 18), the usage amounts of the rinse liquid RN, the rinse liquid 111, and the second chemical liquid LQB can be reduced. That is, the rinse liquid RN, the rinse liquid 111, and the second chemical liquid LQB can be reused. Therefore, the amount of waste of the rinse liquid RN, the rinse liquid 111, and the second chemical liquid LQB can be reduced.

(Modification)
A modified example of the second embodiment will be described with reference to Fig. 22 and Fig. 26. The modified example differs from the second embodiment in that the supply flow rate of the rinsing liquid 111 and the supply flow rate of the fluid FL are precisely adjusted. The modified example mainly differs from the second embodiment in that the supply of the rinsing liquid 111 and the supply of the fluid FL are precisely adjusted. The following mainly describes the differences between the modified example and the second embodiment.

In a modified example, a processing liquid flow rate adjusting section 130 shown in FIG. 22 adjusts the supply flow rate of the rinsing liquid 111 for each processing liquid supply section An.

In the modified example, the supply flow rate of the rinse liquid 111 is adjusted by, in addition to starting and stopping the supply of the rinse liquid 111, changing the supply flow rate of the rinse liquid 111 from the processing liquid supply section An within one group, or , including changing the supply flow rate of the rinsing liquid 111 from the processing liquid supply section An between the plurality of groups. Changing the supply flow rate of the rinse liquid 111 includes changing the supply flow rate stepwise or continuously.

In a modified example, the fluid adjustment unit 145 adjusts the supply flow rate of the fluid FL for each fluid supply pipe 1A.

In a modified example, adjusting the supply flow rate of the fluid FL includes changing the supply flow rate of the fluid FL in addition to starting and stopping the supply of the fluid FL. Changing the supply flow rate of the fluid FL includes changing the supply flow rate in steps or changing the supply flow rate continuously.

Next, a substrate processing method according to a modification will be described with reference to FIGS. 24 and 26. The substrate processing method is executed by the substrate processing apparatus 300. As shown in FIG. 24, the substrate processing method according to the modification includes steps S100 to S500. FIG. 26 is a flowchart showing step S400 of FIG. 24 according to a modification of the second embodiment. That is, FIG. 26 shows the rinsing process of the substrate W by the second rinsing tank ONB2 according to the modified example. As shown in FIG. 26, the rinsing process of the substrate W by the second rinsing tank ONB2 (step S400 in FIG. 24) includes steps S11A to S17A. Steps S11A to S17A are executed under the control of the control unit 161.

Steps S11A to S13A shown in FIG. 26 are similar to steps S1A to S3A shown in FIG. 25, respectively.

As shown in FIG. 26, after step S13A, steps S14A and S15A are executed in parallel.

In step S14A, the supply flow rate of the rinsing liquid 111 is adjusted for each processing liquid supply unit An by the processing liquid flow rate adjustment unit 130 in the first group G1 to the Mth group GM.

Specifically, step S14A includes steps S141, S142, S143, S144, ..., S14M. First, in step S141, the processing liquid flow rate adjustment section 130 adjusts the supply flow rate of the rinsing liquid 111 from the processing liquid supply section An belonging to the first group G1. Next, in step S142, the processing liquid flow rate adjusting section 130 adjusts the supply flow rate of the rinsing liquid 111 from the processing liquid supply section An belonging to the second group G2. Thereafter, steps S143, S144, . . . , S14M are sequentially executed. In step S14M, the processing liquid flow rate adjustment section 130 adjusts the supply flow rate of the rinsing liquid 111 from the processing liquid supply section An belonging to the M-th group GM. In this way, in step S14A, the supply flow rate of the processing liquid supply unit An belonging to the group is adjusted for each group in different periods for each group.

On the other hand, in step S15A, the fluid adjustment unit 145 adjusts the supply flow rate of the fluid FL for each fluid supply pipe 1A in response to the supply of the rinsing liquid 111 by the first group G1 to the Mth group GM.

Specifically, step S15A includes steps S151, S152, S153, S154, ..., S15M. First, in step S151, the fluid adjustment unit 145 adjusts the supply flow rate of the fluid FL in response to the supply of the rinsing liquid 111 from the processing liquid supply unit An belonging to the first group G1. Next, in step S152, the fluid adjustment unit 145 adjusts the supply flow rate of the fluid FL in response to the supply of the rinsing liquid 111 from the processing liquid supply unit An belonging to the second group G2. Thereafter, steps S153, S154, . . . , S15M are sequentially executed. In step S15M, the fluid adjustment unit 145 adjusts the supply flow rate of the fluid FL in response to the supply of the rinsing liquid 111 from the processing liquid supply unit An belonging to the M-th group GM. Thus, in step S15A, the supply flow rate of the fluid FL is adjusted in accordance with the supply of the rinse liquid 111 by each group.

Next, in step S16A, supply of the rinsing liquid 111 from all the processing liquid supply units An to the rinsing liquid 111 stored in the second rinsing tank ONB2 is started.

Next, in step S17A, the substrate holding unit 120 pulls up the substrate W from the rinsing liquid 111. Then, the substrate processing method ends.

The above describes the embodiments of the present invention (including modified examples) with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and can be implemented in various aspects without departing from the gist of the present invention. Furthermore, the multiple components disclosed in the above-described embodiments can be modified as appropriate. For example, a certain component among all the components shown in one embodiment may be added to a component of another embodiment, or some of all the components shown in one embodiment may be deleted from the embodiment.

In addition, the drawings mainly schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings are Actual results may differ due to circumstances. Further, the configuration of each component shown in the above embodiment is an example, and is not particularly limited, and it goes without saying that various changes can be made without substantially departing from the effects of the present invention. .

(1) In FIG. 1, the orientation of the processing liquid hole 3 of the processing liquid supply unit An is not particularly limited. For example, the processing liquid hole 3 may face horizontally or diagonally upward. In addition, the orientation of the air bubble hole 2 of the air bubble supply pipe 1 is not particularly limited. For example, the air bubble hole 2 may face diagonally upward.

(2) In FIG. 1, the number of first processing liquid supply units An is not particularly limited, and may be one, two, or four or more. Similarly, the number of second processing liquid supply sections An is not particularly limited, and may be one, two, or four or more. Further, the number of bubble supply pipes 1 is not particularly limited either.

(3) In FIG. 2, the processing liquid flow rate adjustment mechanism 132 does not have to have the flow meter a1 and the adjustment valve a2. Also, the air bubble adjustment mechanism 142 does not have to have the adjustment valve b1, the flow meter b2, and the filter b3.

(4) In FIG. 1, the mechanism for supplying bubbles BB is not limited to the bubble supply pipe 1. For example, the bubbles BB may be supplied from a plurality of holes provided in a punching plate placed at the bottom of the processing tank 110.

(5) In FIG. 1, the processing liquid supply units An constituting each group can be arbitrarily determined and are not particularly limited. Further, the number of processing liquid supply units An constituting each group can also be arbitrarily determined and is not particularly limited. Further, the number of groups of processing liquid supply units An is not particularly limited as long as it is two or more. Furthermore, the number of processing liquid supply units An may be different or the same between groups. Further, the processing liquid supply sections An constituting the group may be symmetrical or asymmetrical with respect to a center line extending in the vertical direction D.

(6) In the second modification described with reference to FIG. 11, the substrate processing method does not require adjusting the flow rate of the gas GA in step S15. Further, in the substrate processing method, the supply flow rate of the processing liquid LQ does not need to be adjusted in step S14. That is, step S4 in FIG. 10 may be performed instead of step S14.

(7) After reducing the flow rate of the processing liquid LQ in a certain group, it may be switched to the next group.

(8) In the fourth modification, the shapes of the regions 15 and 16 are not particularly limited, and may be triangular or rectangular, for example.

(9) In the fourth modification, machine learning may be performed using one lot (for example, 25 or 50 learning substrates Wa). In this case, it is possible to suppress processing unevenness caused by the processing liquid LQ among a plurality of substrates W within a lot. For example, among the plurality of learning boards Wa constituting one lot, the center learning board Wa in the second direction D20, the learning board Wa at one end in the second direction D20, and the learning board Wa in the second direction D20 Machine learning may be performed using the learning board Wa at the other end of the learning board Wa. In this case as well, it is possible to suppress processing unevenness caused by the processing liquid LQ among a plurality of substrates W within a lot.

The present invention relates to a substrate processing apparatus and a substrate processing method, and has industrial applicability.

100, 100A, 100B, 300 Substrate processing apparatus 110 Processing tank (rinsing tank)
116 First side wall 117 Second side wall 120 Substrate holder 130 Processing liquid flow rate adjuster 135 Air bubble supply unit 140 Air bubble adjuster 145 Fluid adjuster 155 Fluid supply unit 161 Control unit 162 Memory unit 210 Second chemical tank (chemical tank)
An processing liquid supply unit (rinsing liquid supply unit)
A1 to A3: First processing liquid supply unit (first rinsing liquid supply unit)
A4 to A6: Second processing liquid supply unit (second rinse liquid supply unit)
ONB2 Second rinse tank (rinse tank)
W substrate

Claims (16)

a processing tank for storing a processing liquid;
a substrate holder that holds a substrate and immerses the substrate in the processing liquid stored in the processing tank;
a bubble supply unit disposed in the processing tank and configured to supply a plurality of bubbles to the processing liquid from below the substrate;
a plurality of processing liquid supply units disposed in the processing tank and supplying the processing liquid into the processing tank;
The treatment tank includes a first side wall and a second side wall opposed to each other,
The plurality of processing liquid supply units include
At least one first processing liquid supply unit arranged on the side of the first side wall and supplying the processing liquid toward the air bubble;
at least one second processing liquid supply unit disposed on a side of the second side wall and configured to supply the processing liquid toward the bubble. each of the two or more processing liquid supply units among the plurality of processing liquid supply units belongs to at least one group among a plurality of groups different from each other;
At least one of the processing liquid supply units belongs to each of the plurality of groups,
The substrate processing apparatus according to claim 1 , wherein the processing liquid supply units belonging to the groups supply the processing liquid toward the bubble for periods different for each group. the plurality of groups includes a first group, a second group, and a third group;
the first group includes at least one first processing liquid supply unit among the plurality of first processing liquid supply units, and does not include the second processing liquid supply unit;
the second group includes at least one second processing liquid supply unit among the plurality of second processing liquid supply units, and does not include the first processing liquid supply unit;
The substrate processing apparatus of claim 2 , wherein the third group includes at least one first processing liquid supply unit among the plurality of first processing liquid supply units and at least one second processing liquid supply unit among the plurality of second processing liquid supply units. A memory unit that stores a trained model constructed by training the training data;
A control unit that controls the storage unit,
The learning data includes processing amount information and processing condition information,
the processing amount information includes information indicating a processing amount of the learning substrate with the learning treatment liquid,
the processing condition information includes at least information indicating one or more learning processing liquid supply units belonging to each learning group, and information indicating a timing at which each learning group supplies the learning processing liquid,
The control unit inputs input information to the trained model and obtains output information from the trained model;
the input information includes information indicating a target value of a processing amount of the substrate with the processing liquid,
the output information includes at least information indicating one or more of the treatment liquid supply units belonging to each of the groups and information indicating a timing at which each of the groups should supply the treatment liquid;
The substrate processing apparatus according to claim 2 , wherein the control unit controls the plurality of processing liquid supply units based on the output information. The substrate processing apparatus according to any one of claims 1 to 3, further comprising a processing liquid flow rate adjustment section that adjusts the supply flow rate of the processing liquid for each of the processing liquid supply sections. the air bubble supply unit includes a plurality of air bubble supply pipes each receiving a supply of gas and supplying the air bubbles to the treatment liquid;
The substrate processing apparatus according to claim 1 , further comprising: a bubble adjusting unit that adjusts a supply flow rate of the gas for each of the bubble supply pipes. the treatment liquid is a rinse liquid,
4. The substrate processing apparatus according to claim 1, wherein the substrate holding unit immerses the substrate after processing with a chemical liquid stored in a chemical liquid tank separate from the processing tank in the rinsing liquid stored in the processing tank. a rinsing tank that stores rinsing liquid;
a substrate holder that holds a substrate treated with a chemical solution stored in a chemical solution tank different from the rinsing tank, and immerses the substrate in the rinsing solution stored in the rinsing tank;
a fluid supply unit disposed in the rinsing tank and supplying fluid to the rinsing liquid from below the substrate;
a plurality of rinsing liquid supply units arranged in the rinsing tank and supplying the rinsing liquid into the inside of the rinsing tank;
The rinsing tank includes a first side wall and a second side wall facing each other,
The plurality of rinsing liquid supply units include:
at least one first rinsing liquid supply section that is disposed on the side of the first side wall and supplies the rinsing liquid to the inside of the rinsing tank;
and at least one second rinsing liquid supply section that is disposed on the second side wall and supplies the rinsing liquid into the inside of the rinsing tank. 1. A substrate processing method performed by a substrate processing apparatus including a processing tank and a plurality of processing liquid supply units,
an immersion step of immersing a substrate in the treatment liquid stored in the treatment tank;
a bubble supplying step of supplying a plurality of bubbles to the processing liquid from below the substrate;
a bubble control step of supplying the treatment liquid from one or more of the treatment liquid supply units toward the bubbles to control the behavior of the bubbles,
The treatment tank includes a first side wall and a second side wall opposed to each other,
The plurality of processing liquid supply units include
At least one first processing liquid supply unit arranged on the side of the first side wall and supplying the processing liquid toward the air bubble;
at least one second processing liquid supply unit disposed on a side of the second side wall and supplying the processing liquid toward the bubble. Each of the two or more processing liquid supply parts of the plurality of processing liquid supply parts belongs to at least one group among a plurality of mutually different groups,
At least one of the processing liquid supply units belongs to each of the plurality of groups,
10. The substrate processing method according to claim 9, wherein in the bubble control step, the processing liquid supply unit belonging to the group supplies the processing liquid toward the bubbles in different periods for each group. The plurality of groups include a first group, a second group, and a third group,
The first group includes at least one first processing liquid supply section among the plurality of first processing liquid supply sections and does not include the second processing liquid supply section,
The second group includes at least one second processing liquid supply section among the plurality of second processing liquid supply sections and does not include the first processing liquid supply section,
The third group includes at least one first processing liquid supply section among the plurality of first processing liquid supply sections and at least one second processing liquid supply section among the plurality of second processing liquid supply sections. The substrate processing method according to claim 10, comprising: The method further includes a trained model utilization step of inputting input information into a trained model constructed by training training data and acquiring output information from the trained model,
The learning data includes processing amount information and processing condition information,
the processing amount information includes information indicating a processing amount of the learning substrate with the learning treatment liquid,
the processing condition information includes at least information indicating one or more learning processing liquid supply units belonging to each learning group, and information indicating a timing at which each learning group supplies the learning processing liquid,
the input information includes information indicating a target value of a processing amount of the substrate with the processing liquid,
the output information includes at least information indicating one or more of the treatment liquid supply units belonging to each of the groups and information indicating a timing at which each of the groups should supply the treatment liquid;
12. The substrate processing method according to claim 10, wherein in the bubble control step, the processing liquid supply units are controlled based on the output information. The substrate processing method according to any one of claims 9 to 11, wherein in the bubble control process, the supply flow rate of the processing liquid is adjusted for each of the processing liquid supply units. The substrate processing apparatus further includes a plurality of bubble supply pipes each receiving gas supply and supplying the bubbles to the processing liquid,
12. The substrate processing method according to claim 9, wherein in the bubble supply step, the supply flow rate of the gas is adjusted for each bubble supply pipe. the treatment liquid is a rinse liquid,
12. The substrate processing method according to claim 9, wherein in the immersion step, the substrate after processing with a chemical liquid stored in a chemical liquid tank separate from the processing tank is immersed in the rinsing liquid stored in the processing tank. 1. A substrate processing method performed by a substrate processing apparatus including a rinsing tank and a plurality of rinsing liquid supply units, comprising:
an immersion step of immersing the substrate after the treatment with the chemical liquid stored in a chemical liquid tank separate from the rinse tank in the rinse liquid stored in the rinse tank;
a fluid supplying step of supplying a fluid to the rinsing liquid from below the substrate;
a rinsing liquid supplying step of supplying the rinsing liquid from one or more of the rinsing liquid supply units into the rinsing tank,
The rinse tank includes a first side wall and a second side wall facing each other,
The plurality of rinsing liquid supply units include
at least one first rinsing liquid supply unit disposed on the first side wall and configured to supply the rinsing liquid to an inside of the rinsing tank;
at least one second rinsing liquid supply unit disposed on a side of the second sidewall and supplying the rinsing liquid to an inside of the rinsing tank.

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