JP2024008009A - Semiconductor processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent distortion (slip phenomenon) in a silicon crystal of a silicon substrate caused by contact between the silicon substrate and a support of the silicon substrate during heating of the silicon substrate.

SOLUTION: A vortex flow (124) of air is generated inside a cylindrical recess (122) formed in a block (121). A silicon substrate (101) is kept floating above the block (121) by this vortex flow (124), during which time the silicon substrate (101) is heated. Since the silicon substrate (101) is heated in a non-contact state, the occurrence of the slip phenomenon can be prevented.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2024,JPO&INPIT

Description

TECHNICAL FIELD The present invention relates to a semiconductor processing apparatus and a semiconductor processing method, and particularly to an apparatus and method for heat-treating a semiconductor substrate.

As one of the steps in the semiconductor manufacturing process, there is a step of heating a silicon substrate in a high temperature environment of 1200 degrees Celsius or less to oxidize and diffuse impurities within the silicon substrate.
There are two types of heat treatment for silicon substrates: batch heat treatment, which processes a large number of silicon substrates at once (approximately 25 to 200 substrates), and single-wafer processing, which processes a small number of substrates (approximately 1 to 4 substrates). A rapid thermal processor (RTP) that rapidly heats a silicon substrate using a halogen lamp is generally used.
An example of such a rapid heat treatment apparatus is one described in Patent Document 1 (Japanese Patent Publication No. 2015-536048).
FIG. 13 is a longitudinal cross-sectional view of a rapid heating processing chamber 10 in which the rapid heating processing apparatus described in Patent Document 1 is arranged.
Silicon substrate 12 is introduced through port 13 into processing area 18 inside thermal processing chamber 10 .

An annular support ring 14 is arranged inside the heat treatment chamber 10, and the silicon substrate 12 is placed on the support ring 14. Specifically, the support ring 14 is formed with an edge lip 15 extending toward the inside of the heat treatment chamber 10 , and the silicon substrate 12 is placed on the edge lip 15 .
A radiation heating device 24 consisting of a plurality of halogen lamps 26 arranged in an array is arranged above the silicon substrate 12.
A reflector 28 is arranged below the silicon substrate 12 and parallel to the silicon substrate 12. The reflector 28 has a larger size than the silicon substrate 12 and has a function of reflecting thermal radiation emitted from the silicon substrate 12 toward the silicon substrate 12.

A plurality of pyrometers 40 are arranged below the silicon substrate 12. Each pyrometer 40 is connected to the reflector 28 via each of a plurality of light pipes 42. Each pyrometer 40 measures the temperature inside the processing area 18, and according to the measurement result, the voltage of each halogen lamp 26 is controlled so that the temperature of the silicon substrate 12 is uniform.
The support ring 14 is supported on a rotatable flange 32 , and the flange 32 rotates about a centerline 34 , which in turn causes the silicon substrate 12 mounted on the support ring 14 to also rotate about a centerline 34 . do.
FIG. 14 is a longitudinal sectional view showing an example of the support ring 14.
As shown in FIG. 14, a rectangular parallelepiped-shaped support 35 is provided on the edge lip 15 extending from the support ring 14 toward the inside of the heat treatment chamber 10. As shown in FIG. 15, three supports 35 are arranged on the edge lip 15 at equal circumferential angles, and the silicon substrate 12 is placed on these three supports 35.

Special Publication No. 2015-536048 (Patent No. 6258334)

As described above, in the conventional rapid heating processing apparatus shown in FIGS. 13 to 15, the silicon substrate 12 is placed on the support 35.
Generally, the coefficient of thermal expansion of the silicon substrate 12 and the coefficient of thermal expansion of the support body 35 are not equal to each other, but are different from each other. For this reason, when the silicon substrate 12 is rapidly heated in a rapid heating processing apparatus, the difference between the thermal expansion of the silicon substrate 12 and the thermal expansion of the support 35, and furthermore, the contact friction between the two causes the silicon substrate 12 to heat up rapidly. Distortion occurs in the silicon crystal of the substrate 12 (this is called a "slip phenomenon"), and defects occur in the silicon crystal of the silicon substrate 12.
Contact friction and thermal expansion difference are physical phenomena, and cannot be eliminated even if the shapes and surface roughness of the silicon substrate 12 and the support body 35 are changed.
The present invention has been made in view of the problems in the conventional rapid heating processing equipment as described above, and an object of the present invention is to provide a semiconductor processing equipment and a semiconductor processing method that can avoid the occurrence of the slip phenomenon. do.

To achieve this object, the present invention provides a semiconductor processing apparatus that includes a chamber, a heating device that heats a silicon substrate in the chamber, and at least one vortex generating device that generates a gas vortex in the chamber. The silicon substrate is maintained in a floating state by the vortex generated by the vortex generating device, and the heating device heats the silicon substrate while the silicon substrate is floating. Provides semiconductor processing equipment.

The present invention further provides a semiconductor processing apparatus comprising a chamber, a heating device for heating a silicon substrate in the chamber, and an even number of vortex generation devices for generating a gas vortex in the chamber, Each of the even number of vortex generators includes a gas passage that is inclined upwardly with respect to the horizontal plane, and any two of the even number of gas passages are symmetrical with respect to the center of the chamber. When the gas is sent into the chamber through the gas passage, the vortex is generated in the chamber, and the vortex causes a force to levitate the silicon substrate and a lateral direction of the silicon substrate. The present invention provides a semiconductor processing apparatus in which the heating device heats the silicon substrate while the silicon substrate is floating and a force that restricts the movement of the silicon substrate is generated.

Preferably, the gas passage has an inclination angle of 30 degrees or less.
Preferably, the inclination angle of the gas passage is within a range of 15 degrees ± 3 degrees.
The inclination angle Θ of the gas passage is expressed by the following formula (A)
arctanΘ=R1/R2 (A)
R1: Flying height of the silicon substrate R2: Maximum allowable amount of lateral displacement of the silicon substrate It is preferable to obtain it based on.
It is preferable that the semiconductor processing apparatus according to the present invention includes a plurality of the eddy current generation devices, and the plurality of eddy current generation devices are arranged so as to correspond to the outer periphery of the silicon substrate.

The semiconductor processing apparatus according to the present invention includes a plurality of the eddy current generation devices, one of the eddy current generation devices is placed at the center of the silicon substrate, and the other eddy current generation device is placed at the center of the silicon substrate. Preferably, they are arranged so as to correspond to the outer periphery of the silicon substrate.
Preferably, the vortex generator is capable of generating both unidirectional and counter-rotating vortices.
It is preferable to include a control device that controls at least one of the direction and intensity of the vortex generated by the vortex generator.
The present invention further includes a first step of generating at least one gas vortex in the chamber, a second step of floating the silicon substrate above the vortex, and a step of floating the silicon substrate while the silicon substrate is floating. , a third step of heating the silicon substrate in the chamber.

The first process includes a fourth process of generating an even number of gas vortices, and the fourth process includes a process of passing the pressurized gas in an upwardly inclined direction from a horizontal plane. Preferably, any two of the even number of gas vortices are generated symmetrically with respect to the center of the chamber.
It is preferable that the tilt angle of the tilted direction is 30 degrees or less.
Preferably, the angle of inclination of the inclined direction is within a range of 15 degrees ± 3 degrees.
The angle of inclination Θ in the direction inclined upward from the horizontal plane is expressed by the following formula (A)
arctanΘ=R1/R2 (A)
R1: Flying height of the silicon substrate R2: Maximum allowable amount of lateral displacement of the silicon substrate It is preferable to obtain it based on.

The first process is to generate a plurality of gas vortices, and it is preferable that the plurality of gas vortices be formed so as to correspond in position to the outer periphery of the silicon substrate.
The first process is to generate a plurality of gas vortices, one of which is directed to the center of the silicon substrate, and the other to the outer periphery of the silicon substrate. It is preferable that they are formed so as to correspond to each other in position.
Preferably, in the first process, at least one of the plurality of gas vortices generates a vortex having a rotation direction different from that of the other vortices.
It is preferable to include a fifth step of controlling at least one of the direction and intensity of the vortex generated in the third step.

In the conventional rapid heating processing apparatus, since the silicon substrate 12 is heated while being supported on the support 35, there is a difference in thermal expansion between the silicon substrate 12 and the support 35, and furthermore, there is a difference in thermal expansion between the silicon substrate 12 and the support 35. The slip phenomenon was caused by contact friction.
In contrast, according to the semiconductor processing apparatus and semiconductor processing method according to the present invention, the silicon substrate is maintained in a floating state within the chamber using only gas (for example, air). That is, it is possible to heat the silicon substrate in a state where the silicon substrate is not in contact with any support member (support member such as the support member 35 in the conventional rapid heating processing apparatus). Therefore, it is possible to avoid the slip phenomenon that could not be avoided with conventional rapid heating processing apparatuses.

Furthermore, by generating a vortex, it is possible to rotate the silicon substrate in the rotational direction of the vortex. Therefore, a mechanical structure for rotating the silicon substrate (such as a rotatable flange 32 in a conventional rapid heating processing apparatus) is not necessary.
Furthermore, by controlling the direction of the vortex generated by the vortex generator and the amount of pressurized gas supplied to the vortex generator, it is possible to control the rotational direction and rotation speed of the silicon substrate.
In addition, by providing each of the even number of vortex generation devices with a gas passage that is inclined upward with respect to the horizontal plane, and arranging any two gas passages so that they are located symmetrically with respect to the center of the chamber. The generated vortex generates not only a buoyancy force that causes the silicon substrate to float, but also a force that restricts the movement of the silicon substrate in the lateral direction (in a horizontal plane). Therefore, it is possible to prevent the silicon substrate from flying away in the direction away from the chamber.

1 is a schematic vertical cross-sectional view of a semiconductor processing apparatus according to a first embodiment of the present invention. 2 is a cross-sectional view taken along line AA in FIG. 1. FIG. FIG. 2 is a block diagram showing a process of heat-treating a silicon substrate using the semiconductor processing apparatus according to the first embodiment of the present invention. FIG. 3 is a partial plan view of a semiconductor processing apparatus according to a second embodiment of the present invention. It is a top view of the first floating device in a second embodiment of the present invention. FIG. 7 is a block diagram showing a process of heat-treating a silicon substrate using a semiconductor processing apparatus according to a second embodiment of the present invention. FIG. 3 is a schematic vertical cross-sectional view of a semiconductor processing apparatus according to a third embodiment of the present invention. 8 is a sectional view taken along line BB in FIG. 7. FIG.

7 is a schematic graph showing the correlation between the inclination angle of the third gas passage and the force that restricts the movement of the silicon substrate in the lateral direction (in the horizontal plane). 10(A), FIG. 10(B), and FIG. 10(C) are schematic diagrams showing the correlation between the inclination angle of the third gas passage and the force generated by the vortex flow. 11(A) is a plan view of the third gas passage when viewed from above, and FIG. 11(B) is a diagram showing the third gas passage in the horizontal direction. FIG. FIG. 12 is a perspective view of the third gas passage shown in FIG. 11; FIG. 2 is a longitudinal cross-sectional view of a rapid heating processing chamber in which a conventional rapid heating processing apparatus is arranged. It is a longitudinal cross-sectional view showing an example of a support ring in a conventional rapid heat treatment apparatus. It is a top view which shows the example of arrangement|positioning of a support ring.

(First embodiment)
FIG. 1 is a schematic vertical cross-sectional view of a semiconductor processing apparatus 100 according to a first embodiment of the present invention.
The semiconductor processing apparatus 100 according to this embodiment includes a chamber (not shown), a heating device 110 that heats the silicon substrate 101 in the chamber, and a floating device 120 that floats the silicon substrate.
The semiconductor processing apparatus 100 according to this embodiment is structurally different from the conventional rapid heating processing apparatus shown in FIGS. 13 to 15 in that it includes a floating device 120, and the structure other than this point is basically conventional. It is the same as the rapid heat treatment equipment.
FIG. 2 is a cross-sectional view of the flotation device 120, specifically, a cross-sectional view taken along line AA in FIG.
The floating device 120 includes a cylindrical block 121, and a cylindrical recess 122 is formed concentrically with the block 121. The depth of the recess 122 is smaller than the height of the block 121.

As shown in FIG. 1, the outer diameter of the block 121 is set to be equal to or larger than the outer diameter of the silicon substrate 101. The diameter of the recess 122 is set smaller than the outer diameter of the silicon substrate 101.
A linear gas passage 123 extending horizontally is formed inside the block 121. The gas passage 123 communicates with the outside of the block 121 at one end (left end in FIG. 1) and at the other end (right end in FIG. 1). ) communicates with the bottom surface of the recess 122. As shown in FIG. 2, the gas passage 123 extends linearly along a tangent to the recess 122. As shown in FIG.
Pressurized gas is sent into the recess 122 from a pressurized gas generator (not shown in FIG. 1, see FIG. 4 described later) disposed outside the block 121 through a gas passage 123. As shown in FIG. 2, the pressurized gas sent into the interior of the recess 122 swirls along the inner wall of the recess 122 and finally generates a vortex 124 inside the recess 122.

FIG. 3 is a block diagram showing a process of heat-treating the silicon substrate 101 using the semiconductor processing apparatus 100.
First, pressurized gas is sent into the recess 122 from the outside of the block 121 through the gas passage 123 (step S301).
The pressurized gas sent into the inside of the recess 122 swirls along the inner wall of the recess 122 and generates a vortex 124 inside the recess 122 (step S302).
Next, the silicon substrate 101 is sent above the vortex 124. Alternatively, the silicon substrate 101 is placed on the block 121 first, and then the vortex 124 is generated inside the recess 122.
Due to the vortex 124 generated inside the recess 122, negative pressure is generated at the center of the recess 122, and positive pressure is generated at the outer periphery of the recess 122. The silicon substrate 101 located above the block 121 floats above the block 121 due to the action of this positive pressure (step S303). The flying height is, for example, 100 to 200 microns.

By continuing to send pressurized gas into the inside of the recess 122, a vortex 124 is continuously generated inside the recess 122, so that the silicon substrate 101 can be maintained in a floating state.
Additionally, the vortex flow 124 generates a force that rotates the silicon substrate 101 in the rotational direction of the vortex. Therefore, the silicon substrate 101 rotates in the direction in which the vortex 124 rotates (counterclockwise in FIG. 2).
While the silicon substrate 101 is floating, the silicon substrate 101 is heated by the heating device 110 (step S304).
When the heating of the silicon substrate 101 is finished, the supply of pressurized gas to the inside of the recess 122 is stopped (step S305).
As a result, the vortex 124 inside the recess 122 disappears, and the silicon substrate 101 descends onto the block 121. After this, the silicon substrate 101 is removed from the chamber.

In the conventional rapid heating processing apparatus, since the silicon substrate 12 is heated while being supported on the support 35, there is a difference in thermal expansion between the silicon substrate 12 and the support 35, and furthermore, there is a difference in thermal expansion between the silicon substrate 12 and the support 35. The slip phenomenon was caused by contact friction.
In contrast, according to the semiconductor processing apparatus 100 according to the present embodiment, the silicon substrate 101 is maintained in a floating state within the chamber using only gas (for example, air). For this reason, the silicon substrate 101 is heated without contacting the silicon substrate 101 with any support member (support member such as the support member 35 in the conventional rapid heating processing apparatus), that is, without contacting with other objects. It is possible to do so. Therefore, it is possible to avoid the slip phenomenon that could not be avoided with conventional rapid heating processing apparatuses.
Furthermore, by generating the vortex flow 124, it is possible to rotate the silicon substrate 101 in the rotational direction of the vortex. Therefore, a mechanical structure for rotating the silicon substrate 101 (a mechanical structure such as the rotatable flange 32 in a conventional rapid heating processing apparatus) is no longer necessary.

(Second embodiment)
FIG. 4 is a partial plan view of a semiconductor processing apparatus 200 according to a second embodiment of the invention. Specifically, it is a plan view when the silicon substrate 101 is viewed from above.
The semiconductor processing apparatus 200 according to this embodiment includes four first to fourth floating devices 130A, 130B, 130C, and 130D. Each of the four first to fourth floating devices 130A to 130D has the same structure as the floating device 120 in the first embodiment, but differs in size (specifically, the outer diameter of the block 121). Each of the four first to fourth floating devices 130A to 130D is set smaller than the floating device 120 in the first embodiment.
Each of the four first to fourth floating devices 130A to 130D is arranged at equal intervals (at a circumferential angle of 90 degrees) on the circumference of a circle having a diameter smaller than the outer diameter of the silicon substrate 101.

FIG. 5 is a plan view of the first flotation device 130A viewed from above. The structures of the other second to fourth floating devices 130B to 130D are the same as the first floating device 130A.
As shown in FIG. 5, the first flotation device 130A has blocks 131, recesses 132, and gas passages 133 corresponding to the blocks 121, recesses 122, and gas passages 123, respectively, similar to the flotation device 120 in the first embodiment. We are prepared.
The first floating device 130A further includes a linear second gas passage 134 extending horizontally in parallel with the gas passage 133.
The second gas passage 134, like the gas passage 133, communicates with the outside of the block 131 at one end (lower end in FIG. 5) and communicates with the bottom surface of the recess 132 at the other end (upper end in FIG. 5). The second gas passage 134 is located on the opposite side of the gas passage 133 with respect to the horizontal line 131A passing through the center of the block 131, and extends parallel to the gas passage 133. That is, the second gas passage 134 is located symmetrically with the gas passage 133 with respect to the horizontal line 131A.

When pressurized gas is sent into the recess 132 from the gas passage 133, a counterclockwise vortex 135A is generated, and when pressurized gas is sent into the recess 132 from the second gas passage 134, a clockwise vortex is generated. 135B is generated.
As shown in FIG. 4, the gas passage 133 and the second gas passage 134 of each of the four first to fourth flotation devices 130A to 130D are connected to a pressurized gas generator 140, respectively. The pressurized gas generator 140 is connected to a control device 150, and an input device 160 is connected to the control device 150.
When the user of the semiconductor processing device 200 sends an operation instruction to the control device 150 via the input device 160, the control device 150 controls the operation of the pressurized gas generator 140 in accordance with the operation instruction. Specifically, which of the four first to fourth flotation devices 130A to 130D should the pressurized gas be sent to (that is, to which of the first to fourth flotation devices 130A to 130D should the vortex be generated?) Which of the gas passage 133 and the second gas passage 134 should the pressurized gas be sent to (that is, which of the counterclockwise vortex 135A or the clockwise vortex 135B should be generated) and how should the flow rate of the pressurized gas be determined? Whether or not to do so is entirely determined by the control device 150.

FIG. 6 is a block diagram showing a process of heat-treating the silicon substrate 101 using the semiconductor processing apparatus 200.
First, it is determined whether or not to rotate (rotate) the silicon substrate 101 (step S401).
When the silicon substrate 101 is not rotated (NO in step S401), the following control is performed.
As mentioned above, the vortex generates a force that rotates the silicon substrate 101 in the direction of rotation of the vortex. When there is no need to rotate the silicon substrate 101, pressurized gas is sent into the recess 132 through the gas passage 133 to two of the four floating devices 130A to 130D (for example, 130A and 130C). By this, a counterclockwise vortex flow 135A is generated, and the other two flotation devices (for example, 130B and 130D) are caused to have a clockwise rotation by sending pressurized gas into the recess 132 via the second gas passage 134. A vortex flow 135B is generated. As a result, the counterclockwise rotational force due to the vortex 135A and the clockwise rotational force due to the vortex 135B cancel each other out, and the silicon substrate 101 does not rotate (step S402).

When rotating the silicon substrate 101 (YES in step S401), the following control is performed.
In this case, the number of flotation devices that generate a vortex that generates a rotational force in one direction (e.g., a clockwise direction) is replaced by a number of flotation devices that generate a vortex that generates a rotational force in the opposite direction (e.g., a counterclockwise direction). the number of flotation devices to be used.
For example, the control device 150 sends pressurized gas into the recess 132 through the second gas passage 134 in three or four of the four first to fourth flotation devices 130A to 130D, A swirling vortex 135B in a clockwise direction is generated (step S403). Thereby, it is possible to rotate the silicon substrate 101 in the clockwise direction.
When rotating the silicon substrate 101 in the counterclockwise direction, the control device 150 sends pressurized gas into the recess 132 through the gas passage 133 instead of the second gas passage 134, and rotates the silicon substrate 101 in the counterclockwise direction. A swirling vortex 135A is generated (step S403). As a result, the silicon substrate 101 rotates in a counterclockwise direction.

Alternatively, the silicon substrate 101 can be rotated either clockwise or counterclockwise by controlling the flow rate of pressurized gas.
The number of flotation devices that generate a vortex that generates a rotational force in one direction (e.g., clockwise direction) and the number of flotation devices that generate a vortex that generates a rotational force in the opposite direction (e.g., a counterclockwise direction). If they are set to be the same, the flow rate of pressurized gas flowing through one flotation device is set to be larger than the flow rate of pressurized gas flowing through the other flotation device.
For example, the flow rate of the pressurized gas supplied to the flotation device that generates the vortex 135A that swirls in a counterclockwise direction is 1, and the flow rate of the pressurized gas that is supplied to the flotation device that generates the vortex 135B that swirls in the clockwise direction is set to 1. When is set to 2, the silicon substrate 101 can be rotated in the clockwise direction.

Such control of the flow rate of the pressurized gas is executed by the control device 150.
Once the rotation direction of the silicon substrate 101 is determined (step S401), the increase or decrease of the rotation speed of the silicon substrate 101 is then determined (step S404).
Whether the rotational speed of the silicon substrate 101 is increased or decreased is controlled by adjusting the strength of the vortex in each block 131 of the four floating devices 130A-130D. When increasing the rotation speed of the silicon substrate 101, control is performed to increase the strength of the vortex flow by increasing the flow rate of pressurized gas sent to each block 131, and when decreasing the rotation speed of the silicon substrate 101, control is performed to increase the strength of the vortex flow. , by reducing the flow rate of the pressurized gas sent to each block 131, control is performed to reduce the intensity of the vortex flow.
For example, pressurized gas is sent to the first to third flotation devices 130A-130C via the second gas passage 134 to generate a clockwise vortex 135B, and to the fourth flotation device 130D via the gas passage 133. Assume that pressurized gas is sent in to generate a counterclockwise vortex flow 135A, and finally the silicon substrate 101 is rotated in a clockwise direction.

If there is no need to change the rotational speed of the silicon substrate 101 (NO in step S404), the flow rate of pressurized gas sent to each floating device is maintained at the same value (step S405).
On the other hand, when increasing the rotational speed of the silicon substrate 101 (YES in step S404), the flow rate of pressurized gas sent to the first to third floating devices 130A to 130C is increased (step S406). Alternatively, when lowering the rotational speed of the silicon substrate 101 (YES in step S404), the flow rate of pressurized gas sent to the first to third floating devices 130A to 130C is reduced (step S406).
In this way, by adjusting the amount of pressurized gas supplied to each of the four floating devices 130A-130D, the rotation direction and rotation speed of the silicon substrate 101 can be controlled.

The silicon substrate 101 is levitated above the four levitators 130A-130D by the vortex generated inside the recess 132 of each of the four levitators 130A-130D (step S407).
While the silicon substrate 101 is floating, the silicon substrate 101 is heated by the heating device 110 (step S408).
When the heating of the silicon substrate 101 is finished, the supply of pressurized gas to the inside of each recess 132 is stopped (step S409).
As a result, the vortex inside each recess 132 disappears, and the silicon substrate 101 descends onto the four blocks 131. After this, the silicon substrate 101 is removed from the chamber.
According to the semiconductor processing apparatus 200 according to the present embodiment, in addition to the effects provided by the semiconductor processing apparatus 100 according to the first embodiment, it is possible to obtain the effect that the rotation direction and rotation speed of the silicon substrate 101 can be controlled. Can be done.

The semiconductor processing apparatus 200 according to this embodiment is not limited to the above structure, and various modifications are possible.
Although the semiconductor processing apparatus 200 according to this embodiment is configured to include four floating devices 130A to 130D, the number of floating devices is not limited to four. Any number greater than or equal to 2 can be selected.
Further, the arrangement pattern of the plurality of floating devices is not limited to the pattern in this embodiment.
For example, in this embodiment, four floating devices 130A to 130D are arranged at positions corresponding to the outer periphery of the silicon substrate 101, and another floating device is arranged at a position corresponding to the center of the silicon substrate 101. It is also possible to arrange.
In this embodiment, the four levitation devices 130A to 130D are arranged on the circumference of one circle, but for example, a plurality of levitation devices 130A to 130D are arranged on the circumference of another circle located inside the circle. It is also possible to arrange (for example four) flotation devices.
Alternatively, it is also possible to arrange a plurality of flotation devices in an array.
The second gas passage 134 in this embodiment can also be formed in the block 121 in the first embodiment.

(Third embodiment)
FIG. 7 is a schematic vertical cross-sectional view of a semiconductor processing apparatus 300 according to a third embodiment of the present invention, and FIG. 8 is a cross-sectional view taken along line BB in FIG.
As can be seen from a comparison between FIG. 7 and FIG. 1, the block 121 of the semiconductor processing apparatus 300 according to this embodiment includes a third gas passage 310 in place of the gas passage 123 in the first embodiment. Except for this point, the semiconductor processing apparatus 300 according to this embodiment has the same structure as the semiconductor processing apparatus 100 according to the first embodiment.
As shown in FIG. 8, the third gas passage 310 consists of six third gas passages 310A-310F. The six third gas passages 310A to 310F are equally formed on a circumference centered on the center 121A of the block 121 (that is, at a circumferential angle of 60 degrees). That is, any two of the six third gas passages 310A to 310F are located symmetrically around the center 121A of the block 121. Specifically, the third gas passage 310A and the third gas passage 310D, the third gas passage 310B and the third gas passage 310E, and the third gas passage 310C and the third gas passage 310F are each relative to the center 121A of the block 121. They are located symmetrically to each other.

As shown in FIG. 7, the third gas passage 310 (each of the six third gas passages 310A to 310F) is inclined upward with respect to the horizontal plane, and the inclination angle Θ is 30 degrees or less. It is set.
0<Θ≦30
As described above, the semiconductor processing apparatus 100 according to the first embodiment can apply buoyancy to the silicon substrate 101 via the levitation device 120, but this buoyancy is applied in a direction perpendicular to the silicon substrate 101. Acts only in the Z-axis direction. That is, no force is acting on the silicon substrate 101 in the horizontal direction (in the XY plane). Therefore, when some external force acts on the silicon substrate 101, for example, the balance between clockwise rotation and counterclockwise rotation is lost, and if either rotation force becomes stronger, , the silicon substrate 101 begins to rotate in that direction, and there is a risk that the silicon substrate 101 may fly away from the block 121 due to its own rotational force.

The semiconductor processing apparatus 300 according to this embodiment is intended to cope with such a situation.
As mentioned above, each of the six third gas passages 310A-310F is inclined with respect to the horizontal direction. As shown in FIG. 7, when the pressurized gas passes through each of the six third gas passages 310A-310F and enters the inside of the recess 122, the pressurized gas corresponds to each of the six third gas passages 310A-310F. As a result, six vortices 124 are generated (in FIG. 7, only the vortex 124A corresponding to the third gas passage 310A is shown).
Since the vortex flow 124 in the first embodiment is formed by passing through the gas passage 123 extending in the horizontal direction, it is possible to generate a buoyant force to levitate the silicon substrate 101; It is not possible to generate a force that restricts movement (in a horizontal plane) (this point will be discussed later).

On the other hand, since the vortex flow 124 in this embodiment is formed by passing through the inclined third gas passages 310A to 310F, the velocity component in the Z-axis direction (vertical direction) and the velocity component in the XY-axis direction (in the horizontal plane) ) has both velocity components. Therefore, the vortex 124 generates not only a buoyant force that causes the silicon substrate 101 to float, but also a force that restricts the movement of the silicon substrate 101 in the lateral direction (in the horizontal plane).
That is, the six vortices 124 generate a force in the radial direction of the block 121. By arranging the six third gas passages 310A to 310F symmetrically in the radial direction (horizontal direction) of the block 121, the force in the radial direction is balanced and the force that maintains the center position of the silicon substrate 101, that is, A force that restricts the movement of the silicon substrate 101 in the lateral direction (in the horizontal plane) can be generated.
As described above, according to the semiconductor processing apparatus 300 according to the present embodiment, by generating a force that restricts the movement of the silicon substrate 101 in the lateral direction (in the horizontal plane), the silicon substrate 101 can fly away from the block 121. It is possible to prevent them from leaving.

FIG. 9 is a schematic graph showing the correlation between the inclination angle of the third gas passage 310 and the force that restricts the movement of the silicon substrate 101 in the lateral direction (in the horizontal plane).
As shown in FIG. 9, the force F that restricts the movement of the silicon substrate 101 in the lateral direction (in the horizontal plane) increases as the inclination angle of the third gas passages 310A-310F increases from 0 degrees, and peaks at around 15 degrees. reach. If the angle of inclination is further increased, the force F decreases. When the angle of inclination exceeds 30 degrees, the force F becomes almost zero.
Thus, the angle of inclination of the third gas passage 310 is preferably 30 degrees or less, and most preferably 15 degrees.
Further, if Fa is the minimum required force required to restrict the movement of the silicon substrate 101 in the lateral direction (in the horizontal plane), when the tilt angle is 15 degrees, a force F exceeding the minimum required force Fa is generated, Furthermore, the minimum required force Fa can be generated even when the angle of inclination is within the range of 12 degrees to 18 degrees.
Thus, the angle of inclination of the third gas passages 310A-310F is preferably 15±3 degrees (12 to 18 degrees), and optimally 15 degrees.
Next, a generalized method for determining the inclination angle of the third gas passage 310 will be explained.

10(A), FIG. 10(B), and FIG. 10(C) are schematic diagrams showing the correlation between the inclination angle of the third gas passage 310 and the force generated by the vortex flow.
The third gas passage 310L shown in FIG. 10(A) has an inclination angle of S1, the third gas passage 310M shown in FIG. 10(B) has an inclination angle of S2, and the third gas passage 310N shown in FIG. 10(C) has an inclination angle of 0. (similar to the gas passage 123 in the first embodiment), and the inclination angle S1 is smaller than the inclination angle S2.
S1<S2
The heights (lengths in the vertical direction) of the three third gas passages 310L, 310M, and 310N are the same.
The pressurized gas passes through the three third gas passages 310L, 310M, and 310N at the same speed, and has velocity components Y1, Y2, Y3 in the Y-axis direction and velocity components X1, X2, and X3 in the X-axis direction, respectively. Assuming that.

Since the heights of the third gas passages 310L and 310M are equal, Y1=Y2. Since no velocity component in the Y-axis direction occurs in the third gas passage 310N, Y3=0. Since the inclination angle S1 of the third gas passage 310L is smaller than the inclination angle S2 of the third gas passage 310M, the velocity component X1 of the third gas passage 310L in the X-axis direction is the velocity component X2 of the third gas passage 310N in the X-axis direction. bigger.
X1>X2
The flying height of the silicon substrate 101 is equal to the height of the flow of pressurized gas passing through each of the third gas passages 310L, 310M, and 310N, that is, the height of the third gas passages 310L, 310M, and 310N in the vertical direction. Therefore, the floating height of the silicon substrate 101 due to the vortex generated by passing through the three third gas passages 310L, 310M, and 310N is equal to each other.
On the other hand, the amount of displacement (movement) of the silicon substrate 101 in the lateral direction (in the horizontal plane) is proportional to the X-axis direction component of the velocity of the pressurized gas passing through the third gas passages 310L, 310M, and 310N. The larger the X-axis direction component is, the larger the displacement amount of the silicon substrate 101 in the lateral direction (in the horizontal plane) is, and the smaller the X-axis direction component is, the smaller the displacement amount of the silicon substrate 101 in the lateral direction (in the horizontal plane).

As mentioned above, the X-axis direction component X1 (FIG. 10(A)) of the velocity of the pressurized gas passing through the third gas passage 310L is the X-axis direction component of the velocity of the pressurized gas passing through the third gas passage 310M. X2 (FIG. 10(B)). Therefore, the amount of lateral displacement of the silicon substrate 101 floating due to the vortex generated after passing through the third gas passage 310M is the same as the amount of lateral displacement of the silicon substrate 101 floating due to the vortex generated after passing through the third gas passage 310L. It is larger than the amount of displacement in the lateral direction. Since the X-axis direction component X3 (FIG. 10C) of the velocity of the pressurized gas passing through the third gas passage 310N is infinite, the amount of lateral displacement of the silicon substrate 101 is also infinite (i.e. No force that restricts lateral movement acts on the silicon substrate 101).

In this way, if the heights in the vertical direction of the third gas passages 310L, 310M, and 310N are the same, the amount of lateral displacement of the silicon substrate 101 is equal to the pressure that passes through each of the third gas passages 310L, 310M, and 310N. It is proportional to the X-axis direction component of the gas velocity. Therefore, the amount of lateral displacement of the silicon substrate 101 (that is, the velocity of the pressurized gas) is By setting the X-axis direction component) equal to the maximum allowable value, an optimal range of inclination angles can be determined.
Here, assuming that the maximum permissible lateral displacement of the silicon substrate 101 is 500 microns (0.5 mm), the inclination angle Θ when changing the flying height of the silicon substrate 101 from 0.5 mm to 0.05 mm is I calculated it.
The inclination angle Θ is determined by the following calculation formula (A).
Flying height/lateral displacement = arctan Θ (A)

前述のように、シリコン基板１０１の浮上量は１００乃至２００ミクロン（０．１乃至０．２ｍｍ）である。横方向の許容変位量を０．５ｍｍとした場合、シリコン基板１０１の浮上量１００乃至２００ミクロン（０．１乃至０．２ｍｍ）に対して、選択可能な傾斜角Θは２１．８０度乃至１１．３１度である。 The calculation results are shown in Table 1.

As described above, the flying height of the silicon substrate 101 is 100 to 200 microns (0.1 to 0.2 mm). When the allowable displacement in the lateral direction is 0.5 mm, the selectable inclination angle Θ is 21.80 degrees to 11 degrees for the floating height of the silicon substrate 101 of 100 to 200 microns (0.1 to 0.2 mm). .31 degrees.

In the above example, the allowable lateral displacement amount of the silicon substrate 101 was set to 0.5 mm, but the range of the optimal inclination angle changes by increasing or decreasing the allowable lateral displacement amount. Therefore, once the flying height of the silicon substrate 101 and the permissible lateral displacement amount of the silicon substrate 101 are determined, the optimum range of the inclination angle Θ can be determined based on the above equation (A).
In the semiconductor processing apparatus 300 according to the present embodiment, the number of third gas passages 310 is six, but this is just an example, and the number of third gas passages 310 is not limited to six. Any number of third gas passages 310 can be selected as long as the number is even. As described above, two third gas passages 310 out of an even number of third gas passages 310 are set as a set, and the two are provided at symmetrical positions with respect to the center 121A of the block 121.

FIG. 11 is a diagram showing a third gas passage 310A, which is an example of the third gas passage 310 formed in the block 121, and FIG. 11(A) is a plan view of the third gas passage 310A when viewed from above. FIG. 11(B) is a front view of the third gas passage 310A when viewed from the horizontal direction. FIG. 12 is a perspective view of the third gas passage 310A.
As shown in FIG. 11(B), the block 121 (in FIGS. 11 and 12, the block 121 shows only the lower part of the third gas passage 310A) has a third gas passage 310A with an inclination angle of 15 degrees. It is formed. As shown in FIG. 11(A), the third gas passage 310A is divided into six third gas passages 310A-1 to 310A-6.
As shown in FIGS. 11(A) and 12, a cavity with an inclination angle of 15 degrees formed in the block 121 is divided into six equal parts by six ring-shaped columnar bodies 311A to 311F. Six third gas passages 310A-1 to 310A-6 are formed between the columnar bodies 311A to 311F.
The six third gas passages 310A to 310F of the third embodiment are formed, for example, in a cylindrical shape (tunnel shape), but like the third gas passage 310A shown in FIGS. It is also possible to form a wide passage divided by ring-shaped columns 311A to 311F.

100 Semiconductor processing apparatus 101 according to the first embodiment of the present invention Silicon substrate 110 Heating devices 120, 130A-130D Levitation devices 121, 131 Blocks 122, 132 Recesses 123, 133, 310 Passage 134 Second gas passage 140 Pressurized gas Generation device 150 Control device 160 Input device 200 Semiconductor processing device 300 according to the second embodiment of the present invention Semiconductor processing device according to the third embodiment of the present invention

To achieve this object, the present invention provides a semiconductor processing apparatus including a chamber, a heating device that heats a silicon substrate in the chamber, and an even number of vortex generation devices that generate a gas vortex in the chamber. Each of the even number of vortex generators is provided with a gas passage that is inclined upward with respect to the horizontal plane, and any two of the even number of gas passages are connected to the chamber. They are located symmetrically with respect to the center, and when the gas is sent into the chamber through the gas passage, the vortex is generated in the chamber, and the vortex causes a force to levitate the silicon substrate. The present invention provides a semiconductor processing apparatus in which the heating device heats the silicon substrate while the silicon substrate is floating and a force that restricts the lateral movement of the silicon substrate is generated.

The semiconductor processing apparatus according to the present invention includes a plurality of the eddy current generation devices, one of the eddy current generation devices is placed at the center of the silicon substrate, and the other eddy current generation device is placed at the center of the silicon substrate. Preferably, they are arranged so as to correspond to the outer periphery of the silicon substrate.
Preferably, the vortex generator is capable of generating both unidirectional and counter-rotating vortices.
It is preferable to include a control device that controls at least one of the direction and intensity of the vortex generated by the vortex generator.
The present invention further includes a first step of generating at least one gas vortex in the chamber, a second step of floating the silicon substrate above the vortex, and a step of floating the silicon substrate while the silicon substrate is floating. , a third step of heating the silicon substrate in the chamber , the first step includes a fourth step of generating an even number of gas vortices, and the fourth step includes: , comprising a process of passing pressurized gas in a direction inclined upward from a horizontal plane, and any two of the even number of gas vortices are generated symmetrically with respect to the center of the chamber. Provided is a semiconductor processing method characterized by :

It is preferable that the tilt angle of the tilted direction is 30 degrees or less.
Preferably, the angle of inclination of the inclined direction is within a range of 15 degrees ± 3 degrees.
The angle of inclination Θ in the direction inclined upward from the horizontal plane is expressed by the following formula (A)
arctanΘ=R1/R2 (A)
R1: Flying height of the silicon substrate R2: Maximum allowable amount of lateral displacement of the silicon substrate It is preferable to obtain it based on.

The first process is to generate a plurality of gas vortices, and it is preferable that the plurality of gas vortices be formed so as to correspond in position to the outer periphery of the silicon substrate.
Preferably , the present semiconductor processing method includes a fifth step of generating an additional vortex at the center of the silicon substrate .
Preferably, in the first process, at least one of the plurality of gas vortices generates a vortex having a rotation direction different from that of the other vortices.
It is preferable to include a sixth step of controlling at least one of the direction and intensity of the vortex generated in the third step.

Claims (18)

chamber and
a heating device that heats the silicon substrate in the chamber;
at least one vortex generator for generating a gas vortex in the chamber;
A semiconductor processing device comprising:
The silicon substrate is maintained in a floating state by the eddy current generated by the eddy current generating device, and the heating device heats the silicon substrate while the silicon substrate is floating. chamber and
a heating device that heats the silicon substrate in the chamber;
an even number of vortex generation devices that generate a gas vortex in the chamber;
A semiconductor processing device comprising:
Each of the even number of vortex generators includes a gas passage inclined upward with respect to a horizontal plane;
Any two of the even number of gas passages are located symmetrically with respect to the center of the chamber,
The gas is sent into the chamber through the gas passage to generate the vortex in the chamber, and the vortex causes a force to levitate the silicon substrate and a force to restrict lateral movement of the silicon substrate. The heating device heats the silicon substrate while the silicon substrate is floating. 3. The semiconductor processing apparatus according to claim 2, wherein the gas passage has an inclination angle of 30 degrees or less. 3. The semiconductor processing apparatus according to claim 2, wherein the inclination angle of the gas passage is within a range of 15 degrees ± 3 degrees. The inclination angle Θ of the gas passage is expressed by the following formula (A)
arctanΘ=R1/R2 (A)
3. The semiconductor processing apparatus according to claim 2, wherein R1: the flying height of the silicon substrate is determined based on R2: the maximum allowable amount of lateral displacement of the silicon substrate. comprising a plurality of the vortex generating devices,
6. The semiconductor processing apparatus according to claim 1, wherein the plurality of eddy current generating devices are arranged so as to correspond to the outer periphery of the silicon substrate. comprising a plurality of the vortex generating devices,
One of the eddy current generating devices among the plurality of eddy current generating devices is arranged at the center of the silicon substrate, and the other eddy current generating devices are arranged so as to correspond to the outer periphery of the silicon substrate, respectively. The semiconductor processing apparatus according to any one of Items 1 to 5. 6. The semiconductor processing apparatus according to claim 1, wherein the vortex generating device is capable of generating vortices swirling in both one direction and the opposite direction. 6. The semiconductor processing apparatus according to claim 1, further comprising a control device that controls at least one of the direction and intensity of the vortex generated by the vortex generator. a first step of generating at least one gas vortex within the chamber;
a second step of floating the silicon substrate above the vortex;
a third step of heating the silicon substrate in the chamber while the silicon substrate is floating;
A semiconductor processing method comprising: The first process includes a fourth process of generating an even number of gas vortices,
The fourth process is
It has a process of passing pressurized gas in an upwardly inclined direction from a horizontal plane.
11. The semiconductor processing method according to claim 10, wherein any two of the even number of gas vortices are generated symmetrically with respect to the center of the chamber. 12. The semiconductor processing method according to claim 11, wherein the tilt angle of the tilted direction is 30 degrees or less. 12. The semiconductor processing method according to claim 11, wherein the tilt angle of the tilted direction is within a range of 15 degrees ± 3 degrees. The angle of inclination Θ in the direction inclined upward from the horizontal plane is expressed by the following formula (A)
arctanΘ=R1/R2 (A)
12. The semiconductor processing method according to claim 11, wherein R1: the flying height of the silicon substrate is determined based on R2: the maximum allowable amount of lateral displacement of the silicon substrate. The first process generates a plurality of gas vortices,
15. The semiconductor processing method according to claim 10, wherein the plurality of gas vortices are formed to correspond in position to the outer periphery of the silicon substrate. The first process generates a plurality of gas vortices,
10. One vortex of the plurality of gas vortices is formed at the center of the silicon substrate, and the other vortex is formed so as to correspond to the outer periphery of the silicon substrate, respectively. 15. The semiconductor processing method according to any one of items 14 to 14. 16. The semiconductor processing method according to claim 15, wherein the first step generates a vortex in which at least one of the plurality of gas vortices has a rotation direction different from that of the other vortices. 15. The semiconductor processing method according to claim 10, further comprising a fifth step of controlling at least one of the direction and intensity of the vortex generated in the third step.

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