JP2023502641A - スパッタ堆積装置及び方法 - Google Patents
スパッタ堆積装置及び方法 Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 243
- 238000000034 method Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims abstract description 265
- 239000013077 target material Substances 0.000 claims abstract description 113
- 238000000151 deposition Methods 0.000 claims abstract description 71
- 230000008021 deposition Effects 0.000 claims abstract description 54
- 238000000429 assembly Methods 0.000 claims abstract description 48
- 230000000712 assembly Effects 0.000 claims abstract description 48
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 107
- 230000032258 transport Effects 0.000 description 32
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- 239000007789 gas Substances 0.000 description 9
- 238000004146 energy storage Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
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- 239000002243 precursor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 241001272720 Medialuna californiensis Species 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910012305 LiPON Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910052786 argon Inorganic materials 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910012258 LiPO Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- GELKBWJHTRAYNV-UHFFFAOYSA-K lithium iron phosphate Chemical compound [Li+].[Fe+2].[O-]P([O-])([O-])=O GELKBWJHTRAYNV-UHFFFAOYSA-K 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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Abstract
Description
Claims (27)
- スパッタ堆積装置であって、
スパッタ堆積領域内で、ターゲット材料をスパッタ堆積するために、単一プラズマを供給するように配置されるプラズマ生成配列と、
運搬方向に、スパッタ堆積領域を通って、基板を運搬するように配置されるコンベアシステムと、
使用中、基板がスパッタ堆積領域を通って運搬されるときに、
基板上に第一の縞と、
基板上に第二の縞と、が堆積され、
第一の縞が、第二の縞と、異なる密度のターゲット材料又は異なる組成のターゲット材料のうち少なくとも一つを含むように、プラズマを利用して、基板上にターゲット材料のスパッタ堆積をもたらすために、スパッタ堆積領域において、一以上のターゲットを支持するように配置される一以上のターゲット支持アセンブリと、
を備える、スパッタ堆積装置。 - コンベアシステムが、スパッタ堆積領域の第一サイドからスパッタ堆積領域の第二サイドまで、基板を運搬するように配置され、
一以上のターゲット支持アセンブリが、少なくとも第一のターゲットを支持するように配置される第一のターゲット支持アセンブリ、及び少なくとも第二のターゲットを支持するように配置される第二のターゲット支持アセンブリを備え、
第一のターゲット支持アセンブリと第二のターゲット支持アセンブリの間に、スパッタ堆積領域の第一サイドからスパッタ堆積領域の第二サイドまで延びる隙間がある、請求項1に記載のスパッタ堆積装置。 - 隙間が運搬方向に沿って細長い、
第一のターゲット支持アセンブリが運搬方向に沿って細長い、又は
第二のターゲット支持アセンブリが運搬方向に沿って細長い、ことのうち少なくとも一つを満たす、請求項2に記載のスパッタ堆積装置。 - コンベアシステムが、堆積領域を通って、堆積領域の第一の位置から堆積領域の第二の位置まで、基板を運搬するように配置され、
一以上のターゲット支持アセンブリが、第一の位置において、第二の部分への堆積が、第一のターゲットによるものであって、第二のターゲットによるものでなく、第二の位置において、第二の部分への堆積が、第二のターゲットによるものであって、第一のターゲットによるものでないように、第一のターゲット及び第二のターゲットを支持するよう配置される、請求項1に記載のスパッタ堆積装置。 - 一以上のターゲット支持アセンブリが、スパッタ堆積領域内で、実質的に運搬方向の平面内であるが、運搬方向に垂直な軸に沿って、第二のターゲットが第一のターゲットとずれるように、第一のターゲット及び第二のターゲットを支持するよう配置される、請求項1に記載のスパッタ堆積装置。
- 軸が第一の軸であり、
一以上のターゲット支持アセンブリが、スパッタ堆積領域内で、運搬方向に沿って、第二のターゲットが第一のターゲットとずれるように、第一のターゲット及び第二のターゲットを支持するよう配置される、請求項5に記載の装置。 - 一以上のターゲット支持アセンブリが、第一のターゲット及び第二のターゲットのうち少なくとも一つが、運搬方向に対して斜角となるように、第一のターゲット及び第二のターゲットを支持するよう配置される、請求項2から6のいずれか一項に記載のスパッタ堆積装置。
- 第一のターゲットに関係する第一のターゲット磁性素子及び第二のターゲットに関係する第二のターゲット磁性素子を備える、請求項2から7のいずれか一項に記載のスパッタ堆積装置。
- 第一のターゲットの材料のスパッタ堆積を制御する第一のターゲット磁性素子により供給される、第一の磁場、又は
第二のターゲットの材料のスパッタ堆積を制御する第二のターゲット磁性素子により供給される第二の磁場のうち少なくとも一つを制御するように配置される、コントローラーを備える、請求項8に記載のスパッタ堆積装置。 - 一以上のターゲット支持アセンブリが、
第一のターゲット磁性素子とコンベアシステムの間の第一のターゲット、又は
第二のターゲット磁性素子とコンベアシステムの間の第二のターゲット、のうち少なくとも一つを支持するように配置される、請求項8又は9に記載のスパッタ堆積装置。 - 第一のターゲットの材料が、第二のターゲットの材料と異なる、請求項2から10のいずれか一項に記載のスパッタ堆積装置。
- プラズマ生成装置が、運搬方向に沿って細長い一以上の細長いアンテナを備える、請求項1から11のいずれか一項に記載のスパッタ堆積装置。
- コンベアシステムが、湾曲経路に沿って基板を運搬するように配置され、
一以上の細長いアンテナが、湾曲経路の湾曲と同一の方向に曲げられている、請求項12に記載のスパッタ堆積装置。 - ターゲット材料のスパッタ堆積をもたらすために、スパッタ堆積領域において、プラズマを実質的に閉じ込める閉じ込め磁場を供給するように配置される、閉じ込め配列を備え、
閉じ込め配列が、運搬方向に沿って細長い少なくとも一つの閉じ込め磁性素子を備える、請求項1から13のいずれか一項に記載のスパッタ堆積装置。 - 閉じ込め配列が、運搬方向に実質的に垂直な方向に細長い少なくとも一つのさらなる閉じ込め磁性素子を備える、請求項14に記載のスパッタ堆積装置。
- 一以上のターゲット支持アセンブリが、コンベアシステムによるスパッタ堆積領域を通る基板の運搬の間、一以上のターゲットと基板の間で、介在要素なしで、一以上のターゲットを支持するように配置される、請求項1から15のいずれか一項に記載のスパッタ堆積装置。
- コンベアシステムが、運搬方向に基板を運搬するように配置されるローラーを備え、
運搬方向が、ローラーの回転軸に実質的に垂直である、請求項1から16のいずれか一項に記載のスパッタ堆積装置。 - コンベアシステムが、湾曲部材を備え、
一以上のターゲット支持アセンブリが、湾曲部材の少なくとも一部の曲率に実質的に従う一以上のターゲットを支持するように配置される、請求項1から17のいずれか一項に記載のスパッタ堆積装置。 - コンベアシステムに面する一以上のターゲットのうち少なくとも一つの表面が、湾曲している、請求項1から20のいずれか一項に記載のスパッタ堆積装置。
- 基板上にターゲット材料をスパッタ堆積する方法であって、該方法が、
スパッタ堆積領域内で、プラズマをもたらすことと、
基板が、スパッタ堆積領域を通って、運搬されるとき、
基板の第一の部分上に第一の縞及び
基板の第二の部分上に第二の縞が、堆積され、
第一の縞が、第二の縞と、異なる密度のターゲット材料又は異なる組成のターゲット材料のうち少なくとも一つを含むように、スパッタ堆積領域に対する一以上のターゲットの位置で、基板上にターゲット材料のスパッタ堆積をもたらすように、運搬方向に、スパッタ堆積領域を通って基板を運搬することと、を含む、基板上にターゲット材料をスパッタ堆積する方法。 - 基板を運搬することが、
第一のターゲットに実質的に重なるスパッタ堆積領域の第一の領域内で、基板の第一の部分を運搬することと、
第一のターゲットと第二のターゲットの間の隙間に実質的に重なるスパッタ堆積領域の第二の領域内で、基板の第二の部分を運搬することと、
第二のターゲットに実質的に重なるスパッタ堆積領域の第三の領域内で、基板の第三の部分を運搬することと、を含む、請求項20に記載の方法。 - 基板の第一の部分上に第一の縞として、第一のターゲットの材料をスパッタ堆積すること、及び基板の第二の部分上に第三の縞として、第二のターゲットの材料をスパッタ堆積することを含み、
第二の縞が、第一の縞の内部より低い密度の第一のターゲットの材料及び第三の縞の内部より低い密度の第二のターゲットの材料を含むか、
第二の縞に、第一のターゲットの材料及び第二のターゲットの材料が実質的にないか、の少なくともいずれかである、請求項21に記載の方法。 - 基板を運搬することが、
運搬方向に沿って第一の長さを有するターゲットの第一の部分に実質的に重なるスパッタ堆積領域の第一の領域内で、基板の第一の部分を運搬することと、
運搬方向に沿って第二の長さを有するターゲットの第二の部分に実質的に重なるスパッタ堆積領域の第二の領域内で、基板の第二の部分を運搬することと、を含み、
第一の長さが第二の長さと異なる、請求項20に記載の方法。 - 基板を運搬することが、
第一のターゲットに実質的に重なるスパッタ堆積領域の第一の領域内で、基板の第二の部分を運搬することと、
続いて、第二のターゲットに実質的に重なるスパッタ堆積領域の第二の領域内で、基板の第二の部分を運搬することと、を含む、請求項20に記載の方法。 - 基板の第二の部分上に第二の縞として、第一のターゲットの材料と第二のターゲットの材料の組み合わせをスパッタ堆積することを含む、請求項24に記載の方法。
- 第一のターゲットが、運搬方向に沿って細長く、
方法が、プラズマの一部が運搬方向に沿って細長くなるように、プラズマの一部を実質的に閉じ込めることを含む、請求項20から25のいずれか一項に記載の方法。 - 基板を運搬する間、第一のターゲットに関係する第一の磁場及び第二のターゲットに関係する第二の磁場を生成することを含み、
第一の磁場が第二の磁場と異なる、請求項20から26のいずれか一項に記載の方法。
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