JP2023161256A - Semiconductor device, power conversion apparatus, and manufacturing method of semiconductor device - Google Patents

Abstract

To shorten the time of pressure control.SOLUTION: A semiconductor device comprises: an insulation substrate; a semiconductor element provided on a top face of the insulation substrate; a main terminal electrically connected to the top face of the semiconductor element; a case member which is provided while enclosing the insulation substrate in a planar view; and a sealing resin filling a case inner region, which is a region enclosed by the case member and the insulation substrate, while covering a part of the main terminal, the insulation substrate and the semiconductor element. A top face of the case member enclosing the insulation substrate in the planar view is a plane which is continued in a circumferential direction.SELECTED DRAWING: Figure 1

Description

The technology disclosed in this specification relates to a semiconductor device.

2. Description of the Related Art A type of semiconductor device in which a current-carrying path is in the vertical direction of the device in order to handle high voltage or large current is generally called a power semiconductor device. Power semiconductor devices include, for example, insulated gate bipolar transistors (IGBTs), metal-oxide-semiconductor field-effect transistors (metal-oxide-semiconductor field-effect transistors), etc. MOSFET), bipolar Includes transistors, diodes, etc.

Semiconductor devices in which a power semiconductor element is mounted on a circuit board and further packaged with a filler are used in a wide range of fields such as industrial equipment, automobiles, and railways.

In recent years, as the performance of equipment equipped with semiconductor devices has improved, there has been a demand for higher performance of semiconductor devices, such as an increase in rated voltage and current, and an expansion of the operating temperature range (higher and lower temperatures). It's increasing.

The mainstream package structure for semiconductor devices is what is called a case type. In semiconductor devices using a case type package structure, a surface electrode pattern is placed on one surface of an insulating substrate on a base plate for heat dissipation. A power semiconductor element is mounted via an insulated circuit board having a back electrode pattern on the other surface. Then, the case is bonded to the base plate.

Further, the semiconductor element mounted inside the semiconductor device is connected to the main electrode. A bonding wire is used to connect the semiconductor element and the main electrode. On the other hand, direct potting (DP) sealing technology, which does not require a mold and can seal with highly heat-resistant epoxy, is becoming popular for the purpose of preventing insulation failure when high voltage is applied.

Direct potting (DP) sealing technology is a technology in which uncured liquid resin is injected into a case of a package structure, and the resin is cured using a method such as heat or light. In general, voids (bubbles) in the encapsulating resin affect insulation properties or long-term reliability, so it is necessary to fully discharge the air bubbles when injecting the encapsulating resin to prevent voids (bubbles) from forming. It is.

However, since the DP sealing resin used for DP sealing has a higher viscosity than a general silicone gel sealing material, it is difficult to inject into a narrow gap and has the problem that bubbles are difficult to escape.

On the other hand, modules with a DLB (Direct Lead Bonding) structure that achieve high reliability are known. The DLB structure is a structure in which external terminals of a semiconductor device are extended directly above the semiconductor chip, and the semiconductor chip and external terminals are directly joined by solder.

In the case of a DLB structure module, an electrode plate with a large area and an insulating substrate on which a semiconductor element is mounted form a parallel plate structure, making it particularly difficult for air bubbles trapped between the electrode plate and the insulating substrate to escape. , the process time is longer. As a countermeasure, vacuum injection equipment that injects sealing resin under vacuum is used, but the equipment structure is large and it takes time to reduce the pressure or spread the resin, leaving problems in terms of productivity. There is.

For example, Patent Document 1 states that in a module with a DLB structure, the distance between the electrode plate and the substrate at the side edge of the module where the electrode extends is greater than the distance between the electrode plate and the substrate at the junction between the top surface of the semiconductor element and the electrode plate. It is described that by increasing the size of the resin, bubbles can move more easily when resin is injected into the module, thereby suppressing the formation of bubbles.

For example, in Patent Document 2, in a module with a DLB structure, steps are provided in the electrode plate to increase the gap between the electrode plate and the substrate, and an opening is formed in the electrode plate, so that the DP sealing resin can be sealed. It is described that it improves injectability and suppresses bubble formation.

International Publication No. 2019/194272 Japanese Patent Application Publication No. 2006-202885

Even if the gap between the electrode plate and the substrate is increased and an opening is provided in the electrode plate to suppress the formation of bubbles, it is necessary to hold the semiconductor device in a vacuum until the bubbles escape. be.

To increase production efficiency, DP sealing resin may be injected into another semiconductor device (module) while the semiconductor device is held in vacuum, or DP sealing may be performed while holding multiple modules in vacuum at the same time. As a result of methods such as injecting resin, the size of the device increases. As the size of the device increases, the time required for evacuation pressure reduction during resin injection and for venting to the atmosphere after the bubbles disappear becomes longer.

The technology disclosed in the present specification was developed in view of the problems described above, and is a technology that can shorten the time for pressure control.

A semiconductor device that is a first aspect of the technology disclosed in this specification includes an insulating substrate, a semiconductor element provided on the upper surface of the insulating substrate, and a main terminal electrically connected to the upper surface of the semiconductor element. , a case member provided surrounding the insulating substrate in a plan view, a part of the main terminal, the insulating substrate, and the semiconductor element, and an area within the case surrounded by the case member and the insulating substrate; The upper surface of the case member, which includes a sealing resin filled in the area and surrounds the insulating substrate in plan view, is a plane continuous in the circumferential direction.

According to at least the first aspect of the technology disclosed in the present specification, the upper surface of the case member has a planar shape that is easy to seal with a lid jig or the like, so that the pressure can be controlled in the case internal area in a short time. This makes it easier.

In addition, objects, features, aspects, and advantages related to the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below.

FIG. 1 is a side view schematically showing an example of the configuration of a semiconductor device according to an embodiment. FIG. 1 is a plan view schematically showing an example of the configuration of a semiconductor device according to an embodiment. FIG. 3 is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment. FIG. 3 is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment. FIG. 3 is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment. FIG. 3 is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment. FIG. 3 is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment. FIG. 3 is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment. 9 is a side view schematically showing an example of the configuration of a vacuum injection device for injecting the DP sealing resin of FIG. 8. FIG. 1 is a diagram illustrating an example of a configuration of a semiconductor device according to an embodiment; FIG. FIG. 2 is a cross-sectional view showing an example of the configuration of the semiconductor device according to the embodiment, with a lid jig attached. FIG. 2 is a plan view showing an example of a configuration of a semiconductor device according to an embodiment in a state where a lid jig is attached to the configuration. FIG. 2 is a cross-sectional view showing an example of the configuration of the semiconductor device according to the embodiment, with a lid jig attached. 1 is a diagram illustrating an example of a configuration of a semiconductor device according to an embodiment; FIG. FIG. 2 is a cross-sectional view showing an example of the configuration of the semiconductor device according to the embodiment, with a lid jig attached. 1 is a diagram conceptually showing an example of the configuration of a power conversion system including a power conversion device according to the present embodiment.

Embodiments will be described below with reference to the accompanying drawings. In the following embodiments, detailed features and the like are shown for technical explanation, but these are merely examples, and not all of them are necessarily essential features for the embodiments to be implemented.

Note that the drawings are schematically illustrated, and for convenience of explanation, structures may be omitted or simplified as appropriate in the drawings. Further, the mutual relationship between the sizes and positions of the structures shown in different drawings is not necessarily described accurately and may be changed as appropriate. Further, even in drawings such as plan views that are not cross-sectional views, hatching may be added to facilitate understanding of the content of the embodiments.

In addition, in the following description, similar components are shown with the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

In addition, in the description provided in the specification of this application, when a component is described as "comprising," "includes," or "has," unless otherwise specified, exclusions that exclude the presence of other components are also used. It's not an expression.

Furthermore, even if ordinal numbers such as "first" or "second" are sometimes used in the description of the present specification, these terms will not be used to facilitate understanding of the content of the embodiments. These ordinal numbers are used for convenience and the content of the embodiments is not limited to the order that can occur based on these ordinal numbers.

In addition, in the description provided herein, specific positions or directions such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back" Even if terms that mean It is independent of the position or direction of the

In addition, in the description provided in the specification of this application, when "...upper surface" or "...lower surface" etc. are described, in addition to the upper surface itself or the lower surface itself of the target component, This also includes a state in which other components are formed on the upper or lower surface of the. That is, for example, when it is described as "B provided on the upper surface of A", it does not prevent another component "C" from being interposed between A and B.

<First embodiment>
A semiconductor device and a method for manufacturing the semiconductor device according to this embodiment will be described below.

<About the configuration of the semiconductor device>
FIG. 1 is a side view schematically showing an example of the configuration of a semiconductor device according to this embodiment. Further, FIG. 2 is a plan view schematically showing an example of the configuration of a semiconductor device according to this embodiment. Note that although the portion covered with the sealing resin is not actually visible, it is shown through the sealing resin for the sake of explanation.

As an example is shown in FIGS. 1 and 2, the semiconductor device includes an insulating substrate 10, a diode 21 and an IGBT 22 that are semiconductor elements arranged on the top surface of the insulating substrate 10 that is a substrate, and a diode 21 and an IGBT 22 that are semiconductor elements arranged on the top surface of the diode 21 and the IGBT 22. The main terminal 60 is an electrode plate connected to the upper surface of the main terminal 60 to form an electric circuit.

The diode 21, IGBT 22, and main terminal 60 are each placed in a case and sealed with a direct potting (DP) sealing resin 7. The DP sealing resin 7 covers a portion of the main terminal 60, the insulating substrate 10, the diode 21, and the IGBT 22.

The details of each component will be explained below.

The insulating substrate 10 includes an insulating base material 11, and a copper conductor layer 12 and a copper conductor layer 13 formed on both surfaces of the insulating base material 11, respectively. The insulating base material 11 is made of AlN, for example, and has a length in the X-axis direction of 40 mm, a length in the Y-axis direction of 25 mm, and a thickness in the Z-axis direction of 0.635 mm. Further, the thickness of the copper conductor layer 12 and the copper conductor layer 13 in the Z-axis direction is, for example, 0.4 mm.

A diode 21 and an IGBT 22, which are semiconductor elements, are mounted on the electrode pattern (copper conductor layer 12) formed on the upper surface side of the insulating base material 11, and each is connected to the electrode pattern (copper conductor layer 12) via the solder 31. electrically connected to. Note that the diode 21 has a length in the X-axis direction of 15 mm, a length in the Y-axis direction of 15 mm, and a thickness in the Z-axis direction of 0.3 mm. Further, the electrode pattern (copper conductor layer 13) on the lower surface side of the insulating base material 11 is fixed to the insulating substrate 10 via a bonding material such as solder.

Then, the insulating substrate 10 becomes the bottom plate of the semiconductor device, and a region (hereinafter referred to as a case inner region 205) surrounded by the case member 51 disposed around the insulating substrate 10 and the insulating substrate 10 is formed. Case member 51 is provided to surround insulating substrate 10 in plan view. The upper surface of the case member 51 surrounding the insulating substrate 10 in plan view is a plane continuous in the circumferential direction. The DP sealing resin 7 is filled in the case inner region 205.

Case member 51 is fixed to insulating substrate 10 using adhesive 8. By filling the gap between the case member 51 and the insulating substrate 10 with the adhesive 8, leakage of the DP sealing resin 7 is prevented. The case member 51 is made of polyphenylene sulfide (PPS) resin, for example, and has a length in the X-axis direction of 48 mm, a length in the Y-axis direction of 28 mm, and a length in the Z-axis direction. The height is 12 mm. Further, the adhesive 8 is made of silicone, for example.

A main terminal 60 is insert-molded into the case member 51. The main terminal 60 is made of copper, for example, and has a thickness of 0.5 mm in the Z-axis direction and a width of 8 mm in the Y-axis direction. The main terminal 60 is connected via the solder 32 to an electrode through which a large current flows, such as a source electrode of a power semiconductor element such as the diode 21 or the IGBT 22 . Further, a portion of the main terminal 60 exposed from the upper part of the case member 51 serves as a screw terminal 61.

Furthermore, a signal terminal 62 is provided in the case member 51 by insert molding. The signal terminal 62 is electrically connected to the gate electrode or temperature sensor electrode of the IGBT 22 through the bonding wire 4. Note that the bonding wire 4 is made of aluminum, for example, and has a diameter of 0.15 mm.

Further, the case member 51 is arranged to surround the insulating substrate 10 in plan view, and the copper conductor layer 13 is provided exposed without being covered by the case member 51.

The details of each component will be explained below.

As the semiconductor elements diode 21 and IGBT 22, if a semiconductor element using a semiconductor material that operates at 150° C. or higher is used, the effect of suppressing bubble generation is large. It is especially effective when applied to so-called wide bandgap semiconductors, which have a larger bandgap than silicon (Si) and are made of materials such as silicon carbide (SiC), gallium nitride (GaN)-based materials, or diamond (C). big.

Furthermore, in FIGS. 1 and 2, only two semiconductor elements are mounted on one semiconductor device as an example, but the number of semiconductor elements is not limited to this, and may vary depending on the intended use. A required number of semiconductor elements may be mounted accordingly.

In addition, in FIGS. 1 and 2, solder 31 and solder 32 are used as the bonding material, but the bonding material is not limited to this, and silver or a silver alloy may be used to connect the semiconductor element and the copper conductor. The layer 12 may be bonded, or the lower surface of the insulating base material 11 and the copper conductor layer 13 may be bonded.

Copper is normally used for the copper conductor layer 12, the copper conductor layer 13, and the main terminal 60. However, the materials used for these are not limited to copper, and may be any material that has the necessary heat dissipation properties. For example, aluminum or iron may be used, or a composite material of these may be used. Further, composite materials such as copper/invar/copper may be used, and alloys such as AlSiC and CuMo may be used.

Furthermore, the surfaces of the copper conductor layer 12, the copper conductor layer 13, and the main terminal 60 are usually plated with nickel, but the plating is not limited to this, and gold or tin plating may also be applied. Any structure that can supply the necessary current and voltage to the semiconductor element may be used.

Furthermore, since at least a portion of the main terminal 60 and the copper conductor layer 12 are buried in the DP sealing resin 7, the adhesion between the main terminal 60 and the copper conductor layer 12 and the DP sealing resin 7 is improved. Furthermore, minute irregularities may be provided on the surface of the main terminal 60 and the surface of the copper conductor layer 12. This unevenness makes it possible to improve the adhesion between the main terminal 60 and the copper conductor layer 12 and the DP sealing resin 7.

The insulating substrate 10 includes an insulating base material 11 made of ceramic such as Al ₂ O ₃ , SiO ₂ , AlN, BN, or Si ₃ N ₄ and provided with copper or aluminum electrode patterns on both sides.

The insulating base material 11 needs to have heat dissipation properties and insulation properties, and is not limited to the above-mentioned materials, but may be made of a material such as a cured resin in which ceramic powder is dispersed or a cured resin in which a ceramic plate is embedded. The insulating base material 11 may be provided with a copper conductor layer 12 and a copper conductor layer 13.

In addition, when the insulating base material 11 is a cured resin in which ceramic powder is dispersed, the ceramic powder used for the insulating base material 11 includes Al ₂ O ₃ , SiO ₂ , AlN, BN, Si ₃ N ₄ , etc. is used, but _the material is not limited to these, and diamond, SiC, _B2O3 , etc. may also be used. Furthermore, powder made of resin such as silicone resin or acrylic resin may be used.

The shape of these powders is often spherical, but is not limited to this, and powders such as crushed, granular, flaky, or aggregated powders may also be used. The amount of powder to be filled may be such that necessary heat dissipation and insulation properties can be obtained. The resin used for the insulating base material 11 is usually an epoxy resin, but it is not limited to this, and polyimide resin, silicone resin, acrylic resin, etc. may also be used, and it has both insulation and adhesive properties. Any material can be used.

For the bonding wire 4, a wire body made of aluminum or gold and having a circular cross section is used, but the wire body is not limited to this. ) may be used. The material of the bonding wire 4 may be an aluminum alloy.

As an example shown in FIG. 2, in this embodiment, four bonding wires 4 are used to connect the IGBT 22 and the signal terminal 62, but the present invention is not limited to this. The wire 4 may be used to connect the IGBTs 22 to each other, or to connect the upper electrode pattern (copper conductor layer 12) and the signal terminal 62. Further, depending on the current density of the IGBT 22, etc., it is possible to use the bonding wires 4 of a necessary thickness (size) and provide the necessary number of bonding wires 4.

Furthermore, as a method for joining the bonding wire 4 and the part to be joined, molten metal joining in which a piece of metal such as copper or tin is melted, ultrasonic joining, or the like can be employed. However, the method is not particularly limited as long as it can supply the necessary current and voltage to the semiconductor element.

The case member 51 is preferably made of a resin material with a high thermal softening point, and for example, PPS (Poly Phenylene Sulfide) resin can be used. However, the material is not particularly limited as long as it is not thermally deformed within the operating temperature range of the semiconductor device and has insulation properties.

Epoxy resin is used as the DP sealing resin 7, but it is not limited to this, and any material can be used as long as it has a desired elastic modulus and heat resistance. A urethane resin that has both adhesive properties and adhesion properties may also be used.

3 to 8 are diagrams illustrating an example of a method for manufacturing a semiconductor device according to this embodiment. A method for manufacturing a semiconductor device according to this embodiment will be described with reference to FIGS. 3 to 8.

First, FIG. 3 shows an insulating substrate 10 in which a copper conductor layer 12 is formed on the upper surface of an insulating base material 11, and a copper conductor layer 13 is formed on the lower surface.

Next, as an example is shown in FIG. 4, the diode 21 and the IGBT 22 are positioned and mounted on the copper conductor layer 12 on the upper surface of the insulating substrate 10 via a plate-shaped solder 31, and the solder 31 is attached using a reflow oven. is heated and melted to perform solder die bonding.

Next, as an example shown in FIG. 5, a silicone adhesive 8 is applied to the inner circumference of the case member 51 in which the main terminal 60 or the signal terminal 62 is insert-molded. Then, the ceramic insulating substrate 10 is positioned and mounted, and the adhesive 8 is cured by heating in an oven at, for example, 50° C. or higher and 150° C. or lower for 30 minutes.

Next, as an example is shown in FIG. 6, molten solder 32 is poured through openings formed in the main terminal 60 corresponding to the source electrodes of the diode 21 and IGBT 22 to form a main circuit.

Next, as an example is shown in FIG. 7, the gate electrode or temperature sensor electrode of the IGBT 22 and the signal terminal 62 extending from the case member 51 are connected by wire bonding using the bonding wire 4. The configuration in this state is referred to as configuration 100.

Finally, as an example is shown in FIG. , and held at 200° C. or lower for a predetermined period of time) to cure and complete sealing. By doing so, the semiconductor device is completed.

FIG. 9 is a side view schematically showing an example of the configuration of a vacuum injection device for injecting the DP sealing resin of FIG. 8. The details of the resin injection process will be explained with reference to FIG. 9.

A plurality of semiconductor devices (that is, the configuration 100 shown in FIG. 7) before being filled with sealing resin are arranged on a transport pallet 71, and the semiconductor devices are transported into a vacuum chamber 70 of a vacuum injection device. After loading, the loading port (not shown) of the transport pallet 71 in the vacuum chamber 70 is closed, and the gas in the vacuum chamber 70 is exhausted from the exhaust port 72.

After evacuating the inside of the vacuum chamber 70 to a low vacuum of, for example, 100 Pa or more and 10,000 Pa or less, the semiconductor device (configuration 100) placed on the transport pallet 71 is moved directly below the injection nozzle 73 of the resin injection device. let The tip of the injection nozzle 73 is located within the vacuum chamber 70 . Then, a predetermined amount of resin is injected into the case of the configuration 100 from the injection nozzle 73.

The resin injected from the injection nozzle 73 is subjected to degassing promotion treatment using buoyancy by increasing the gas volume in the resin liquid under reduced pressure in a separately prepared tank. However, residual gas may dissolve into the resin in the piping route from the tank to the injection nozzle 73. Further, when resin is injected, gas around the structure 100 may be involved depending on the discharge flow rate of the resin.

After the resin is injected, the transport pallet 71 moves. Then, the semiconductor device is held on the transport pallet 71 for a certain period of time while maintaining a reduced pressure state so that the gas in the resin of the semiconductor device into which the resin has been injected is naturally discharged out of the resin.

Further, during a certain period of time during which the semiconductor device is held, resin is injected from the injection nozzle 73 into another semiconductor device that has been moved directly below the injection nozzle 73 on the transport pallet 71. By doing so, production efficiency is increased.

After a predetermined amount of resin has been sequentially injected into all the semiconductor devices mounted on the transport pallet 71 and a certain amount of time has passed under reduced pressure for degassing, the vacuum chamber 70 is opened to the atmosphere. Carry out at a specified time. After the inside of the vacuum chamber 70 is opened to the atmosphere, the transport pallet 71 is taken out from an exit (not shown), and the semiconductor device is transported on the pallet to the next process, a resin curing process.

Although FIG. 9 illustrates a vacuum injection device in which resin is injected into three structures 100, the number of structures 100 into which resin is injected may be greater than that. Further, the number of injection nozzles 73 provided in the vacuum injection device is not limited to one, and a plurality of injection nozzles 73 may be provided.

The holding time under reduced pressure required to degas the injected resin, the evacuation time of the vacuum chamber 70 that houses the plurality of semiconductor devices and the transport pallet 71, and the return of the vacuum chamber 70 to atmospheric pressure. The pressure time is adjusted according to the defoaming rate of the resin. In the configuration shown in FIG. 9, the configuration 100 is carried in using a transport pallet 71, the vacuum chamber 70 is evacuated, resin is injected, the semiconductor device is held for degassing, and the vacuum chamber 70 is returned to atmospheric pressure. Since these steps are performed continuously, the time required for the resin injection process as a whole increases.

FIG. 10 is a diagram showing an example of the configuration of a semiconductor device according to this embodiment. As an example is shown in FIG. 10, resin for a semiconductor device is injected into one structure 100 using a lid jig 90 having a flat portion opposite to a flat portion of the peripheral edge of the case member 51. The area within the case 205 is sealed.

The lid jig 90 includes a flat lid portion 105 having a size that overlaps with the structure 100 in a plan view, a flange-shaped exhaust port 91 provided on the lid portion 105, and a resin injecting hole provided on the lid portion 105. an injection nozzle 92 provided on the lid 105 for not interfering with the signal terminal 62, and a projection 192 provided on the flat part of the lid 105 opposite to the flat part of the peripheral edge of the case member 51. , and an O-ring 93 for maintaining the vacuum in the case inner region 205.

FIG. 11 is a cross-sectional view showing an example of the configuration of the semiconductor device according to the present embodiment, with the lid jig 90 attached. As an example shown in FIG. 11, the exhaust port 91 is connected to an exhaust pipe 193 that is connected to a vacuum pump 97. The pressure inside the case region 205 is reduced through the exhaust pipe 193 . The exhaust pipe 193 is provided with a branched leak valve 99 for venting to the atmosphere. Injection nozzle 92 is also connected to piping 194 that is connected to mixer 98 . The piping 194 is provided with an on-off valve (not shown) for controlling resin flow.

By attaching a lid jig 90 to the structure 100 as shown in FIGS. 10 and 11, the volume to be evacuated and brought into a reduced pressure state can be reduced. Therefore, the evacuation time and the pressure recovery time to atmospheric pressure can be shortened.

The material of the lid jig 90 is, for example, a plated steel material such as stainless steel, aluminum or Ni, or an alloy such as Fe, Mo or Mg, which has a heat resistance temperature of 180° C. and a material rigidity and thickness that can withstand a pressure of 100 Pa. is preferred.

FIG. 12 is a plan view showing an example of the structure of the semiconductor device according to the present embodiment, in which the lid jig 90 is attached to the structure 100. In FIG. 12, for convenience, the lid jig 90 is shown transparently and represented by a dotted line.

An O-ring 93 for maintaining a vacuum in the case inner region 205 is provided at the peripheral edge of the lid jig 90 in a plan view. When the O-ring 93 contacts the peripheral edge of the case member 51, the case inner region 205 is sealed. Note that a groove may be formed in the peripheral edge of the case member 51 to fix the position of the O-ring 93, and by using grease or the like to increase the adhesion of the O-ring 93, the exhaust can be effectively removed. This can prevent time leaks.

As an example is shown in FIG. 12, the position of the injection nozzle 92 in the lid jig 90 in plan view is preferably a position that avoids directly above the main terminal 60. If the viscosity of the resin injected through the injection nozzle 92 is approximately 1000 mPaS or more and tens of thousands of mPaS or less, if a vacuum bubble is caught in the resin flowing under the main terminal 60 during resin injection, the vacuum bubble may It becomes difficult to remove. This phenomenon is likely to occur when the injection nozzle 92 is located directly above the main terminal 60, so by locating the injection nozzle 92 in a position that avoids directly above the main terminal 60, the possibility of this phenomenon occurring is reduced. be able to. Furthermore, it is desirable that the injection nozzle 92 be placed near the center of the case inner region 205 in plan view so that the injected resin spreads quickly into the case inner region 205 .

On the other hand, if the viscosity of the resin to be injected is several hundred mPaS or less, the fluidity of the resin is high and vacuum bubbles can be easily removed, so there are no particular restrictions on the position of the injection nozzle 92, and the injection nozzle 92 can be placed inside the case in plan view. It suffices if it is inside the area 205. Similarly, the exhaust port 91 only needs to be inside the case inner region 205 in plan view.

Next, a method for manufacturing a semiconductor device according to the present embodiment using the lid jig 90 will be described.

The lid jig 90 is aligned with the position of the structure 100 in a plan view and left standing so that the area 205 inside the case of the semiconductor device is sealed. Next, by evacuating the case inner region 205 with the vacuum pump 97 through the exhaust port 91, the lid jig 90 is pressurized with the atmosphere, and the case inner region 205 is sealed by crushing the O-ring 93. . Then, the vacuuming of the case inner region 205 progresses.

By sealing the case inner region 205 with the lid jig 90 as described above, the exhaust volume becomes smaller. Therefore, even if a vacuum pump that is smaller than a large vacuum injection device (for example, the vacuum injection device illustrated in FIG. 9) is used to evacuate a volume that includes a plurality of configurations 100 at once, it can be done in a short time. A desired pressure (for example, 100 Pa or more and 10,000 Pa or less) can be achieved.

Then, when the pressure is reduced to a predetermined level, the resin is sent out from the mixer 98 that mixes the resin using a pump or compressed air, and the resin is injected from the injection nozzle 92 into the area 205 inside the case of the semiconductor device. Fill with sealing resin 7. That is, the inner case region 205 sealed by the lid jig 90 is depressurized by the action of the vacuum pump, and the DP sealing resin 7 is injected into the case inner region 205 from the injection nozzle 92 under reduced pressure. The mixer 98 may be a cylinder filled with mixed resin or a one-component type resin tube.

By placing the case inner region 205 under vacuum even when resin is injected, gas entrainment during resin injection is reduced. Furthermore, by placing the case inner region 205 under vacuum when the resin is injected, the gas that dissolves in the resin in the pipe 194 that feeds the resin into the case inner region 205 can also be removed from the resin when the resin is expanded in the case inner region 205. It reaches the surface and bubble removal progresses. Therefore, the vacuum holding time for defoaming can be shortened.

After the bubble removal is completed, a leak valve 99 branched from the exhaust pipe 193 is opened and air is taken in to release the air to the atmosphere. Since the volume of the case inner region 205 is kept small by the lid jig 90, the time for opening to the atmosphere for pressure recovery can also be shortened. Therefore, the entire resin injection process can be completed in a short time.

Note that the lid jig 90 is not limited to the case where only one unit is provided in one semiconductor device, but may be a semiconductor device in which multiple units of the lid jig 90 are mounted. Further, although the leak valve 99 is provided as a branch from the exhaust pipe 193, the leak valve may be attached to the lid jig 90 through a new pipe.

<Second embodiment>
A semiconductor device and a method for manufacturing the semiconductor device according to this embodiment will be described. In addition, in the following description, components similar to those described in the embodiment described above will be illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate. .

<About the configuration of the semiconductor device>
In this embodiment, a configuration will be described in which the peripheral edge of the semiconductor device is not brought into contact with the lid jig.

FIG. 13 is a cross-sectional view showing an example of the configuration of the semiconductor device according to the present embodiment with the lid jig 90A attached. As an example is shown in FIG. 13, the lid jig 90A includes a lid portion 105, a flange-shaped exhaust port 91, an injection nozzle 92, and a receiving jig 94 that supports the semiconductor device via an O-ring 93A. , an O-ring 93 for maintaining the vacuum in the case inner region 205 is provided on a flat part of the lid part 105 opposite to a flat part of the peripheral edge of the receiving jig 94. The receiving jig 94 supports the side surface of the case member 51 of the semiconductor device via the O-ring 93A, and supports the semiconductor device while being in contact with the bottom surface of the case member 51. The receiving jig 94 is arranged to surround the case member 51 in a plan view. The upper surface of the receiving jig 94 surrounding the case member 51 in plan view is a plane continuous in the circumferential direction. The exhaust port 91 is connected to an exhaust pipe 193 that is connected to a vacuum pump. The receiving jig 94 and the lid part 105 overlap in plan view, and both occupy a larger area in plan view than the semiconductor device.

Then, the inner case region 205 is sealed by covering the upper surface of the receiving jig 94 with the lid jig 90A, and in this state, the inner case region 205 is filled with the DP sealing resin 7. That is, the inner case region 205 sealed by the lid jig 90A is depressurized by the action of the vacuum pump, and the DP sealing resin 7 is injected into the case inner region 205 from the injection nozzle 92 under reduced pressure.

Note that in this embodiment, it is not essential that the upper surface of case member 51 be a continuous plane in the circumferential direction.

FIG. 14 is a diagram showing an example of the configuration of a semiconductor device according to this embodiment. As an example is shown in FIG. 14, the receiving jig 94 includes a receiving portion 89 for placing a semiconductor device.

When the O-ring 93 contacts the peripheral edge of the receiving jig 94, the case inner region 205 is sealed. Note that a groove for fixing the position of the O-ring 93 may be formed on the peripheral edge of the receiving jig 94, and by increasing the adhesion of the O-ring 93 using grease or the like, it can be effectively fixed. It can prevent leaks during exhaust.

Furthermore, the O-ring 93A contacts the side surface of the receiving jig 94 and the side surface of the case member 51, thereby sealing the case inner region 205. Note that a groove may be formed on the side surface of the receiving jig 94 to fix the position of the O-ring 93A, and by using grease or the like to increase the adhesion of the O-ring 93A, it is possible to effectively exhaust air. This can prevent time leaks.

Note that an O-ring for ensuring a vacuum in the case inner region 205 may be provided within the receiving portion 89.

<Third embodiment>
A semiconductor device and a method for manufacturing the semiconductor device according to this embodiment will be described. In addition, in the following description, components similar to those described in the embodiment described above will be illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate. .

<About the configuration of the semiconductor device>
FIG. 15 is a cross-sectional view showing an example of the configuration of the semiconductor device according to this embodiment, with the lid jig 90B attached. As an example is shown in FIG. 15, the lid jig 90B includes a lid portion 105, a flange-shaped exhaust port 91, an injection nozzle 92, a projection portion 192 for not interfering with the signal terminal 62, and a case member 51. An O-ring 93 for maintaining a vacuum in the case inner area 205 is provided on a flat part of the lid part 105 opposite to a flat part of the peripheral edge of the DP sealing resin 7 filled in the case inner area 205. and a heater 96 for heating. The exhaust port 91 is connected to an exhaust pipe 193 that is connected to a vacuum pump.

By heating the lid jig 90B with the heater 96 while bringing the electrode terminal (main terminal 60 or signal terminal 62) provided in the semiconductor device or the case member 51 into contact with the lid jig 90B, the electrode terminal, the case member 51, and the case inner region 205 are heated. can be heated and kept warm. Note that the contact portion between the lid jig 90B and the electrode terminal or case member 51 provided in the semiconductor device is preferably made of a metal with high thermal conductivity, such as stainless steel or Al.

Further, by heating the case inner region 205, the heater 96 can indirectly maintain the temperature of the resin injected into the case inner region 205 in a range of 40° C. or higher and 100° C. or lower. Then, by injecting the resin while indirectly heating the resin with the heater 96, the resin can be poured into the case inner area 205 without increasing the viscosity due to resin cooling, etc. can be easily removed. Furthermore, since the electrode terminals or case member 51 provided in the semiconductor device and the lid jig 90B are heated and kept warm while contacting the electrode terminals or the case member 51 and the case inner region 205, the fluidity of the resin after resin injection is reduced. It is possible to shorten the time until the entire case inner region 205 is filled with the resin without causing any deterioration.

<Fourth embodiment>
A power conversion device and a method for manufacturing the power conversion device according to the present embodiment will be described. In addition, in the following description, components similar to those described in the embodiment described above will be illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate. .

<About the configuration of the power converter>
In this embodiment, the semiconductor device according to the first embodiment, second embodiment, or third embodiment described above is applied to a power conversion device. Although the power conversion device to which the present invention is applied is not limited to a specific application, a case where the present invention is applied to a three-phase inverter will be described below.

FIG. 16 is a diagram conceptually showing an example of the configuration of a power conversion system including the power conversion device of this embodiment.

The power conversion system shown in FIG. 16 includes a power supply 100A, a power conversion device 200, and a load 300.

The power supply 100A is a DC power supply and supplies DC power to the power conversion device 200. The 100A power source can be composed of various things, for example, it can be composed of a DC system, a solar battery, or a storage battery, or it can be composed of a rectifier circuit or an AC/DC converter connected to an AC system. It may also be a thing. Moreover, the power supply 100A may be configured with a DC/DC converter that converts DC power output from a DC system into predetermined power.

The power conversion device 200 is a three-phase inverter connected between the power source 100A and the load 300, converts DC power supplied from the power source 100A into AC power, and supplies the AC power to the load 300. As an example is shown in FIG. 16, the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs the same, and outputs a control signal to control the main conversion circuit 201 to the main conversion circuit 201. A control circuit 203 is provided.

The load 300 is a three-phase electric motor driven by AC power supplied from the power converter 200. Note that the load 300 is not limited to a specific application, but is a motor installed in various electrical devices, and is used, for example, as a motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioner.

The details of the power conversion device 200 will be explained below. The main conversion circuit 201 includes a switching element and a freewheeling diode (not shown here), and when the switching element switches, it converts the DC power supplied from the power source 100A into AC power, and supplies the AC power to the load 300. do. Although there are various specific circuit configurations of the main conversion circuit 201, the main conversion circuit 201 according to the present embodiment is a two-level, three-phase full bridge circuit, and has six switching elements and each switching element has an opposite configuration. It can be constructed from six freewheeling diodes connected in parallel. Each switching element or each freewheeling diode of the main conversion circuit 201 is configured by a semiconductor device 202 corresponding to either the first embodiment or the second embodiment described above. The six switching elements are connected in series every two switching elements to form an upper and lower arm, and each upper and lower arm forms a respective phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of the respective upper and lower arms, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.

Further, the main conversion circuit 201 includes a drive circuit (not shown) that drives each switching element, but the drive circuit may be built in the semiconductor device 202 or a drive circuit may be provided separately from the semiconductor device 202. The configuration may include the following. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201 and supplies it to the control electrode of the switching element of the main conversion circuit 201. Specifically, according to a control signal from a control circuit 203, which will be described later, a drive signal that turns the switching element on and a drive signal that turns the switching element off are output to the control electrodes of each switching element. When keeping the switching element in the on state, the drive signal is a voltage signal (on signal) that is higher than the threshold voltage of the switching element, and when keeping the switching element in the off state, the drive signal is the threshold voltage of the switching element. It becomes a voltage signal (off signal) below the voltage.

Control circuit 203 controls switching elements of main conversion circuit 201 so that desired power is supplied to load 300. Specifically, based on the power to be supplied to the load 300, the time (on time) during which each switching element of the main conversion circuit 201 should be in the on state is calculated. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Then, a control command (control signal ) is output. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element in accordance with this control signal.

In the power conversion device according to this embodiment, the semiconductor device according to the first embodiment, second embodiment, or third embodiment is applied as the switching element and free wheel diode of the main conversion circuit 201. A power conversion device with high insulation properties and long-term reliability can be realized.

In this embodiment, an example in which the present technology is applied to a two-level three-phase inverter has been described, but the present technology is not limited to this and can be applied to various power conversion devices. In this embodiment, a two-level power converter is used, but a three-level or multi-level power converter may also be used. When supplying power to a single-phase load, this technology can be applied to a single-phase inverter. May be applied. Furthermore, when power is supplied to a DC load or the like, the present technology can also be applied to a DC/DC converter or an AC/DC converter.

Furthermore, the power conversion device to which the present technology is applied is not limited to cases where the above-mentioned load is an electric motor; for example, the power supply for an electrical discharge machine, a laser processing machine, an induction heating cooker, or a non-contact device power supply system. It can also be used as a device, and furthermore, it can be used as a power conditioner for a solar power generation system or a power storage system.

<About the manufacturing method of the power conversion device>
Next, a method for manufacturing a power conversion device according to this embodiment will be described.

First, a semiconductor device is manufactured using the manufacturing method described in the embodiment described above. Then, a main conversion circuit 201 having the semiconductor device is provided as a configuration of a power conversion device. The main conversion circuit 201 is a circuit for converting and outputting input power.

A control circuit 203 is provided as a configuration of the power converter. The control circuit 203 is a circuit for outputting a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

<About the effects produced by the embodiments described above>
Next, examples of effects produced by the embodiment described above will be shown. In addition, in the following description, the effects will be described based on the specific configurations shown in the embodiments described above, but examples will not be included in the present specification to the extent that similar effects are produced. may be replaced with other specific configurations shown. That is, for convenience, only one of the concrete configurations that are associated may be described below as a representative, but other specific configurations that are described as a representative may also be described. It may be replaced with a similar configuration.

Further, the replacement may be made across multiple embodiments. That is, the respective configurations shown as examples in different embodiments may be combined to produce similar effects.

According to the embodiment described above, the semiconductor device includes the insulating substrate 10, the semiconductor element, the main terminal 60, the case member 51, and the sealing resin. Here, the semiconductor element corresponds to at least one of the diode 21, IGBT 22, etc., for example. Further, the sealing resin corresponds to, for example, the DP sealing resin 7. IGBT22 is provided on the upper surface of insulating substrate 10. The main terminal 60 is electrically connected to the upper surface of the IGBT 22. Case member 51 is provided to surround insulating substrate 10 in plan view. The DP sealing resin 7 covers a portion of the main terminal 60, the insulating substrate 10, and the IGBT 22. Further, the DP sealing resin 7 is filled in the case inner region 205, which is a region surrounded by the case member 51 and the insulating substrate 10. Here, the upper surface of the case member 51 surrounding the insulating substrate 10 in plan view is a plane continuous in the circumferential direction.

According to such a configuration, since the upper surface of the case member 51 has a planar shape that can be easily sealed with a lid jig or the like, it becomes easy to control the pressure in the case inner region 205 in a short time. In this way, good resin injection becomes possible while promoting defoaming of the DP sealing resin 7 injected into the case inner region 205. Further, since both the time for reducing the pressure in the case inner region 205 and the time for returning the pressure to atmospheric pressure are shortened, the time for the entire resin injection process can be shortened. Therefore, it is possible to obtain a semiconductor device that is filled with a sufficiently defoamed resin, has a high withstand voltage, and has excellent insulation properties.

In addition, in the case where other configurations illustrated in the present specification are appropriately added to the above configuration, that is, when other configurations in the present specification that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, according to the embodiment described above, the DP sealing resin 7 is in a state where the upper surface of the case member 51 is covered with the lid jig 90 (or the lid jig 90A, the lid jig 90B). , the depressurized case inner region 205 is filled. According to such a configuration, while covering the upper surface of the case member 51 with the lid jig 90, the inner case region 205 can be brought into a depressurized state in a short time.

Further, according to the embodiment described above, the power conversion device includes the above-described semiconductor device, and a main conversion circuit 201 that converts and outputs input power; A control circuit 203 that outputs a control signal for control to the main conversion circuit 201 is provided. According to such a configuration, the semiconductor device is filled with resin that is sufficiently degassed even in a short resin injection process, and as a result, a power converter device that has high withstand voltage and excellent insulation properties can be obtained. Obtainable.

According to the embodiment described above, the IGBT 22 is provided on the upper surface of the insulating substrate 10 in the method for manufacturing a semiconductor device. Then, the insulating substrate 10 provided with the IGBT 22 is surrounded by a case member 51 in a plan view. Here, the upper surface of the case member 51 is a plane continuous in the circumferential direction. Then, the main terminal 60 is electrically connected to the upper surface of the IGBT 22. Then, the upper surface of the case member 51 is covered with the lid jig 90 (or the lid jig 90A, the lid jig 90B), and the case inner region 205, which is the region surrounded by the case member 51 and the insulating substrate 10, is sealed. Here, the lid jig 90 includes an injection nozzle 73 for filling the case inner region 205 with the DP sealing resin 7, and an exhaust pipe 193 for reducing the pressure in the case inner region 205. Then, while reducing the pressure in the case inner region 205 through the exhaust pipe 193, the DP sealing resin 7 is filled into the case inner region 205 through the injection nozzle 73.

According to such a configuration, while covering the upper surface of the case member 51 with the lid jig 90, the inner case region 205 can be brought into a depressurized state in a short time. In this way, good resin injection becomes possible while promoting defoaming of the DP sealing resin 7 injected into the case inner region 205. Further, since both the time for reducing the pressure in the case inner region 205 and the time for returning the pressure to atmospheric pressure are shortened, the time for the entire resin injection process can be shortened.

Note that if there are no particular restrictions, the order in which each process is performed can be changed.

In addition, if other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, if other configurations in the specification of the present application that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, according to the embodiment described above, in the method for manufacturing a semiconductor device, the case member 51 is further surrounded by a receiving jig 94 in a plan view. Here, the upper surface of the receiving jig 94 is a plane continuous in the circumferential direction. Filling the case inner region 205 with the DP sealing resin 7 is achieved by covering the upper surface of the receiving jig 94 with the lid jig 90A, thereby sealing the case inner region 205 with the DP sealing resin 7. This is to fill the sealing resin 7. According to such a configuration, even if the upper surface of the case member 51 is not brought into contact with the lid jig, the receiving jig 94 provided surrounding the case member 51 comes into contact with the lid jig 90A, and the inner area of the case is By sealing the case 205, the case inner region 205 can be brought into a reduced pressure state in a short time.

Further, according to the embodiment described above, the lid jig 90B includes a heater 96 for heating the DP sealing resin 7. In the method for manufacturing a semiconductor device, filling the case inner region 205 with the DP sealing resin 7 is performed by filling the case inner region 205 with the DP sealing resin 7 while heating the DP sealing resin 7 with the heater 96. It is to be. According to such a configuration, the resin can be poured into the case inner region 205 without increasing the viscosity due to resin cooling or the like, and it is also possible to easily remove air bubbles caught during resin injection.

<About modifications of the embodiment described above>
In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may also be described, but these are only one example in all aspects. However, it is not limited.

Accordingly, countless variations and equivalents, not illustrated, are envisioned within the scope of the technology disclosed herein. For example, when at least one component is modified, added, or omitted, or when at least one component in at least one embodiment is extracted and combined with a component in another embodiment. shall be included.

In addition, in the embodiments described above, if a material name is stated without being specified, unless a contradiction occurs, the material may contain other additives, such as an alloy. shall be included.

Further, the description herein is incorporated by reference for all purposes related to the present technology, and is not admitted to be prior art.

Hereinafter, various aspects of the present disclosure will be collectively described as supplementary notes.

(Additional note 1)
an insulating substrate;
a semiconductor element provided on the upper surface of the insulating substrate;
a main terminal electrically connected to the top surface of the semiconductor element;
a case member provided surrounding the insulating substrate in plan view;
a sealing resin filled in a case inner region that is a region surrounded by the case member and the insulating substrate while covering a part of the main terminal, the insulating substrate, and the semiconductor element;
The upper surface of the case member surrounding the insulating substrate in plan view is a plane continuous in the circumferential direction;
Semiconductor equipment.

(Additional note 2)
A main conversion circuit that includes the semiconductor device according to Supplementary Note 1 and that converts and outputs input power;
a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit;
Power converter.

(Additional note 3)
A semiconductor element is provided on the top surface of an insulating substrate,
enclosing the insulating substrate on which the semiconductor element is provided with a case member in a plan view;
The upper surface of the case member is a plane continuous in the circumferential direction,
electrically connecting a main terminal to the top surface of the semiconductor element;
covering the upper surface of the case member with a lid jig to seal an inner case area that is an area surrounded by the case member and the insulating substrate;
The lid jig includes an injection nozzle for filling the inner region of the case with a sealing resin, and an exhaust pipe for reducing the pressure of the inner region of the case,
filling the sealing resin into the case inner region through the injection nozzle while reducing the pressure in the case inner region via the exhaust pipe;
A method for manufacturing a semiconductor device.

(Additional note 4)
A method for manufacturing a semiconductor device according to appendix 3,
further surrounding the case member with a receiving jig in plan view;
The upper surface of the receiving jig is a plane continuous in the circumferential direction,
Filling the case inner region with the sealing resin includes filling the case inner region with the sealing resin in a state where the case inner region is sealed by covering the upper surface of the receiving jig with the lid jig. is to fill with resin,
A method for manufacturing a semiconductor device.

(Appendix 5)
A method for manufacturing a semiconductor device according to appendix 3 or 4,
The lid jig further includes a heater for heating the sealing resin,
Filling the case inner region with the sealing resin includes filling the case inner region with the sealing resin while heating the sealing resin with the heater;
A method for manufacturing a semiconductor device.

7 Sealing resin, 10 Insulating substrate, 51 Case member, 60 Main terminal, 73 Injection nozzle, 90 Lid jig, 90A Lid jig, 90B Lid jig, 92 Injection nozzle, 94 Receiving jig, 96 Heater, 193 Exhaust Piping, 194 Piping, 200 Power conversion device, 201 Main conversion circuit, 202 Semiconductor device, 203 Control circuit, 205 Area within case.

Claims (5)

an insulating substrate;
a semiconductor element provided on the upper surface of the insulating substrate;
a main terminal electrically connected to the top surface of the semiconductor element;
a case member provided surrounding the insulating substrate in plan view;
a sealing resin that covers a part of the main terminal, the insulating substrate, and the semiconductor element and fills an inner case region that is a region surrounded by the case member and the insulating substrate;
The upper surface of the case member surrounding the insulating substrate in plan view is a plane continuous in the circumferential direction;
Semiconductor equipment. A main conversion circuit comprising the semiconductor device according to claim 1 and converting and outputting input power;
a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit;
Power converter. A semiconductor element is provided on the top surface of an insulating substrate,
enclosing the insulating substrate on which the semiconductor element is provided with a case member in a plan view;
The upper surface of the case member is a plane continuous in the circumferential direction,
electrically connecting a main terminal to the upper surface of the semiconductor element;
covering the upper surface of the case member with a lid jig to seal an inner case area that is an area surrounded by the case member and the insulating substrate;
The lid jig includes an injection nozzle for filling the inner region of the case with a sealing resin, and an exhaust pipe for reducing the pressure of the inner region of the case,
filling the sealing resin into the case inner region through the injection nozzle while reducing the pressure in the case inner region via the exhaust pipe;
A method for manufacturing a semiconductor device. A method for manufacturing a semiconductor device according to claim 3,
further surrounding the case member with a receiving jig in plan view;
The upper surface of the receiving jig is a plane continuous in the circumferential direction,
Filling the case inner region with the sealing resin includes filling the case inner region with the sealing resin in a state where the case inner region is sealed by covering the upper surface of the receiving jig with the lid jig. is to fill with resin,
A method for manufacturing a semiconductor device. A method for manufacturing a semiconductor device according to claim 3 or 4,
The lid jig further includes a heater for heating the sealing resin,
Filling the case inner region with the sealing resin includes filling the case inner region with the sealing resin while heating the sealing resin with the heater;
A method for manufacturing a semiconductor device.

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