JP2023142433A - Circulation device, and control method thereof - Google Patents

Abstract

To quickly bring the temperature and the flow rate of a treatment liquid to desired values.SOLUTION: When the temperature of a liquid is increased, after a pump is accelerated at a first acceleration until the speed of the pump reaches a first predetermined speed, until the speed of the pump reaches a second predetermined speed that is higher than the first predetermined speed, the pump is accelerated at a second acceleration that is lower than the first acceleration.SELECTED DRAWING: Figure 12

Description

TECHNICAL FIELD The present disclosure relates to a circulation device and a method of controlling the same.

2. Description of the Related Art In the manufacturing process of semiconductor devices, the surface of a substrate such as a semiconductor wafer is treated with a chemical solution. An example of the treatment is a cleaning treatment, and an example of the chemical solution (hereinafter also referred to as a "treatment liquid" including a rinsing solution and an organic solvent) is an acidic liquid.

For example, in a single-wafer type substrate processing apparatus in which substrates are processed one by one, the substrates are rotated while being held substantially horizontally, and a processing liquid is supplied to the surface of the rotating substrates. Such processing is performed in a processing casing commonly called a chamber.

After the processing liquid is supplied to the substrate, it is collected and reused. Specifically, a processing liquid is supplied to the chamber, and after being subjected to processing, the processing liquid is recovered. Supply and collection of such processing liquid is performed by a circulation device provided outside the chamber.

When a plurality of chambers are provided, these are each stored in a processing unit. The processing units are stacked in a substantially vertical direction and are included in a configuration commonly called a tower. Multiple towers may be provided.

Supply of the processing liquid from the circulation device and recovery of the processing liquid to the circulation device are performed for each tower. The processing liquid is supplied to and collected from the plurality of chambers for each tower.

The circulation device performs a circulation process (hereinafter tentatively referred to as "external circulation") that supplies and recovers the processing liquid to the tower, as well as a circulation process (hereinafter referred to as "external circulation") that circulates the processing liquid inside the circulation apparatus without going through the tower. (tentatively named ``internal circulation'').

The external circulation and internal circulation for each of these towers are mentioned, for example, in Patent Document 1 below. Further, the case where sulfuric acid is used as the treatment liquid is mentioned in, for example, Patent Document 2 below.

JP 2021-052038 Publication JP2020-088208A

Before performing external circulation and supplying the processing liquid to the tower, internal circulation is performed to raise the processing liquid to the desired temperature and achieve the desired flow rate, which contributes to the processing of the substrate using the processing liquid. do.

Even in the internal circulation, the processing liquid is circulated using a pump as in the external circulation. For example, the pump is a rotary pump, and the pump rotates at a predetermined rotational speed at which such circulation is appropriately performed, thereby performing internal circulation.

The rotation of the pump is accelerated from a state where the pump has not reached a predetermined rotational speed (hereinafter also tentatively referred to as "low speed") until the pump reaches a predetermined rotational speed. If this acceleration is large, cavitation is likely to occur in the processing liquid.

If the viscosity of the treatment liquid is low, there is a high possibility that cavitation will occur. When cavitation occurs, fine particles are likely to be generated during processing or remain on the substrate to be processed, increasing the possibility that so-called particle characteristics will deteriorate.

Generally, the higher the temperature of the liquid, the lower the viscosity of the liquid. Therefore, if the temperature of the processing liquid is high, cavitation is likely to occur.

When accelerating the rotation of the pump to circulate the processing liquid, the acceleration adopted for the acceleration, that is, the rotational acceleration of the pump, can be set to an appropriate value when the processing liquid is at or near a predetermined temperature. Conceivable. This is because if the rotational acceleration is suppressed to the extent that cavitation is difficult to occur in the processing liquid at or near a specified temperature, it is assumed that cavitation will be difficult to occur in the processing liquid at a lower temperature. be.

However, the smaller the rotational acceleration is, the longer it takes for the processing liquid to reach the required flow rate when the processing liquid is supplied.

The present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide a technique for quickly reaching desired values of the temperature and flow rate of a processing liquid.

A first aspect of the method for controlling a circulation device according to the present disclosure is a method for controlling a circulation device that supplies and collects liquid to and from an external path. The circulation device includes: a storage tank that stores the liquid; a first pipe that has a first inflow end into which the liquid flows from the storage tank and is used for supplying the liquid; a heater that is provided in the first pipe and that heats the liquid; a heater that is provided in the first pipe and has an inlet that is connected to the first inflow end and an outlet that is connected to the heater; and a second piping having a second outflow end through which the liquid flows out to the storage tank and used for the recovery of the liquid.

The method includes, when increasing the temperature of the liquid, accelerating the pump at a first acceleration until the speed of the pump reaches a first predetermined speed; The pump is accelerated at a second acceleration lower than the first acceleration until the pump reaches a second predetermined speed, which is higher than the first acceleration.

The second aspect of the method for controlling a circulation device according to the present disclosure is the first aspect of the method for controlling a circulation device according to the present disclosure. The second aspect includes a first step of accelerating the pump at the first acceleration until the speed of the pump reaches the first predetermined speed when the temperature of the liquid is lower than a first predetermined temperature; a second step of maintaining the speed of the pump at the first predetermined speed when the speed of the pump reaches the first predetermined speed when the temperature of the liquid is lower than the first predetermined temperature; When the temperature is above the first predetermined temperature and below a second predetermined temperature higher than the first predetermined temperature, the pump is operated at the second predetermined speed until the speed of the pump reaches the second predetermined speed. a third step of accelerating with an acceleration, and when the temperature of the liquid is above the first predetermined temperature and below the second predetermined temperature and the speed of the pump reaches the second predetermined speed, the pump and a fourth step of maintaining the speed at the second predetermined speed.

The speed of the pump and the temperature of the liquid are such that the pump reaches the first predetermined speed before the temperature of the liquid reaches the first predetermined temperature; There is a relationship in which the pump reaches the second predetermined speed before the predetermined temperature is reached.

A third aspect of the method for controlling a circulation device according to the present disclosure is a second aspect of the method for controlling a circulation device according to the present disclosure, wherein the temperature of the liquid reaches the second predetermined temperature. The temperature is increased at a constant rate until .

A fourth aspect of the method for controlling a circulation device according to the present disclosure is the second aspect or third aspect of the method for controlling a circulation device according to the present disclosure, wherein the circulation device is configured to connect the heater in the first pipe. an on-off valve connected to the pump via an on-off valve; an end connected to the first pipe between the heater and the on-off valve; and a third outflow end from which the liquid flows out to the storage tank. It further includes a third pipe. The fourth aspect further includes a fifth step of closing the on-off valve in the first step and the second step, and opening the on-off valve after the temperature of the liquid reaches the second predetermined temperature. .

A first aspect of the circulation device according to the present disclosure supplies and recovers liquid to and from an external path. The circulation device includes: a storage tank that stores the liquid; a first pipe that has a first inflow end into which the liquid flows from the storage tank and is used for supplying the liquid; a heater that is provided in the first pipe and that heats the liquid; a heater that is provided in the first pipe and has an inlet that is connected to the first inflow end and an outlet that is connected to the heater; The pump includes a pump that is an object of pumping; a second pipe that has a second outflow end through which the liquid flows out to the storage tank and is used for the recovery of the liquid; and a control section.

When increasing the temperature of the liquid, the control unit accelerates the pump at a first acceleration until the speed of the pump reaches the first predetermined speed; and then increases the speed of the pump to the first predetermined speed. The pump is accelerated at a second acceleration that is lower than the first acceleration until a second predetermined speed is reached that is higher than the first acceleration.

The second aspect of the circulation device according to the present disclosure is the first aspect of the circulation device according to the present disclosure. In the second aspect, the control unit accelerates the pump at the first acceleration until the speed of the pump reaches the first predetermined speed when the temperature of the liquid is less than a first predetermined temperature. , when the speed of the pump reaches the first predetermined speed when the temperature of the liquid is below the first predetermined temperature, the speed of the pump is maintained at the first predetermined speed, and the temperature of the liquid is lower than the first predetermined temperature. Accelerate the pump at the second acceleration until the speed of the pump reaches the second predetermined speed when the temperature is above the first predetermined temperature and below a second predetermined temperature higher than the first predetermined temperature. and when the speed of the pump reaches the second predetermined speed when the temperature of the liquid is above the first predetermined temperature and below the second predetermined temperature, the speed of the pump is reduced to the second predetermined speed. Maintain speed.

The speed of the pump and the temperature of the liquid are such that the pump reaches the first predetermined speed before the temperature of the liquid reaches the first predetermined temperature; There is a relationship in which the pump reaches the second predetermined speed before the predetermined temperature is reached.

A third aspect of the circulation device according to the present disclosure is a second aspect of the circulation device according to the present disclosure, wherein the control unit controls the heater so that the temperature of the liquid reaches the second predetermined temperature. The liquid is heated at a constant rate of temperature increase until .

A fourth aspect of the circulation device according to the present disclosure is the second or third aspect of the circulation device according to the present disclosure, which is connected to the pump via the heater in the first piping, and at least Further, a third pipe having an on-off valve that can be opened and closed; and an end connected to the first pipe between the heater and the on-off valve, and a third outflow end through which the liquid flows out to the storage tank. Be prepared. The control unit closes the on-off valve before the temperature of the liquid reaches the second predetermined temperature, and opens the on-off valve after the temperature of the liquid reaches the second predetermined temperature.

For example, the pump is a magnetically levitated centrifugal pump. For example, the liquid is sulfuric acid or a dilute solution of sulfuric acid.

According to the first aspect of the control method for a control device according to the present disclosure and the first aspect of the control device according to the present disclosure, the flow rate of the liquid quickly reaches a desired value while suppressing the occurrence of cavitation of the liquid. reach.

According to the second aspect of the control method for a control device according to the present disclosure and the second aspect of the control device according to the present disclosure, there is no need to stop heating the liquid to wait for the speed of the pump to increase.

The third aspect of the control method for a control device according to the present disclosure and the third aspect of the control device according to the present disclosure contribute to quickly bringing the temperature of the liquid to a desired temperature.

According to the fourth aspect of the control method for a control device according to the present disclosure and the fourth aspect of the control device according to the present disclosure, after the flow rate and temperature of the liquid reach desired values, the liquid flows into the external path. Supplied.

FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus. FIG. 1 is a vertical cross-sectional view schematically showing a substrate processing apparatus. FIG. 2 is a vertical cross-sectional view schematically showing a vertical cross-section of the substrate processing apparatus along line III-III. FIG. 3 is a side view schematically showing an example of the configuration of the left part of the processing block as viewed along the left direction. FIG. 3 is a side view schematically showing an example of the configuration of the right part of the processing block as viewed along the right direction. FIG. 2 is a cross-sectional view schematically showing the configuration of a processing unit. FIG. 2 is a vertical cross-sectional view schematically showing the configuration of a processing unit. FIG. 2 is a block diagram showing a functional configuration for controlling operations of each component of the substrate processing apparatus. FIG. 2 is a block diagram showing an example of a configuration of a control section. FIG. 2 is a piping diagram illustrating the configuration of a circulation device. FIG. 2 is a piping diagram illustrating the configuration of a circulation device. It is a graph showing an increase in the rotational speed of the pump and a temperature increase due to the heater. 7 is a flowchart illustrating control according to the present disclosure.

Embodiments of the present disclosure will be described below with reference to the accompanying drawings. The components described in each embodiment are merely examples, and the scope of the present disclosure is not intended to be limited only to the examples. The drawings are shown only schematically. In the drawings, dimensions and numbers of parts may be exaggerated or simplified as necessary to facilitate understanding. In the drawings, parts having similar configurations and functions are designated by the same reference numerals, and redundant explanations will be omitted as appropriate.

In the following description, a right-handed XYZ orthogonal coordinate system will be used to explain the positional relationship of each element. Specifically, a case is assumed in which the X-axis and the Y-axis extend in the horizontal direction, and the Z-axis extends in the vertical direction (vertical direction). Further, in the drawings, the direction toward which the tip of the arrow points is shown as a + (plus) direction, and the opposite direction is shown as a - (minus) direction. Specifically, the upward direction in the vertical direction is the +Z direction, and the downward direction in the vertical direction is the -Z direction.

In this specification, expressions indicating relative or absolute positional relationships (for example, "parallel," "orthogonal," and "centered") do not only strictly represent the positional relationship, but also include tolerances, unless otherwise specified. It also represents a state in which the object is relatively displaced in terms of angle or distance within a range where the same level of functionality can be obtained. Unless otherwise specified, expressions that indicate that two or more things are in the same state (e.g., "same," "equal," and "homogeneous") do not only mean that they are strictly quantitatively equal, but also indicate the tolerance or the same degree. It also represents a state in which there is a difference in which the function is obtained.

Unless otherwise specified, expressions indicating shapes (e.g., "square shape" or "cylindrical shape", etc.) do not only strictly represent shapes geometrically, but also express shapes to the extent that the same degree of effect can be obtained, such as unevenness or convexity. It also represents shapes with chamfers, etc.

The expressions "comprising," "comprising," "comprising," "containing," or "having" one component are not exclusive expressions that exclude the presence of other components.

Unless otherwise specified, the expression "connection" includes not only a state in which two elements are in contact with each other, but also a state in which two elements are separated with another element in between.

Unless otherwise specified, "moving" in a certain direction may include not only moving parallel to this direction, but also moving in a direction that has a component in this direction.

<1. Configuration of substrate processing equipment>
FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus 790. FIG. 2 is a vertical cross-sectional view schematically showing a vertical cross-section of the substrate processing apparatus 790 along the front-rear direction (±X direction).

The substrate processing apparatus 790 processes a substrate (for example, a semiconductor wafer) W using a processing liquid that is supplied to and collected from the circulation apparatus according to the present disclosure. The circulation device and its control method will be described in detail later. The circulation device and the substrate processing device 790 may be collectively understood as a substrate processing system.

As the substrate W, for example, a thin flat plate having a substantially disk shape is applied. In FIG. 1, the outer edge of a substrate W stored in a carrier C, which will be described later, and the outer edge of a substrate W held by a holding part 711, which will be described later, are both indicated by broken lines.

The substrate processing apparatus 790 includes, for example, an indexer section 792 and a processing block 793. Processing block 793 is coupled to indexer section 792 .

The indexer section 792 and the processing block 793 are arranged horizontally. The indexer unit 792 supplies the substrate W to the processing block 793, for example. The processing block 793 performs processing on the substrate W, for example. The indexer unit 792 collects the substrate W from the processing block 793, for example.

In this specification, for convenience, the horizontal direction in which the indexer section 792 and the processing block 793 are lined up is adopted as the ±X direction (also referred to as the front-back direction). Of the ±X directions (back and forth directions), the direction from the processing block 793 to the indexer section 792 is adopted as the -X direction (also referred to as the front direction or forward direction), and the direction from the indexer section 792 to the processing block 793 is adopted as the +X direction ( (also called backward direction or backward direction).

The horizontal direction orthogonal to the ±X direction (front-back direction) is adopted as the ±Y direction (also referred to as the width direction). Of the ±Y directions (width direction), the direction that goes to the right when facing the -X direction (front direction) is adopted as the +Y direction (also referred to as the right direction or right direction), and the -X direction (front direction) The direction toward the left when facing is adopted as the -Y direction (also referred to as the left direction or the left direction).

The direction perpendicular to the horizontal direction is adopted as the ±Z direction (also referred to as the vertical direction). Of the ±Z directions (vertical directions), the direction of gravity is adopted as the -Z direction (also referred to as the downward direction or downward direction), and the direction opposite to the gravity direction is adopted as the +Z direction (also referred to as the upward direction or upward direction). . If there is no particular distinction between front, rear, right, and left, they are all simply referred to as lateral.

<1-1. Configuration of indexer section>
As shown in FIG. 1, the indexer section 792 includes a plurality of (for example, four) carrier mounting sections 721, a conveyance space 722, and one or more (for example, one) first conveyance mechanism (also known as an indexer mechanism). ) 723.

The plurality of carrier placement parts 721 are lined up in the width direction (±Y direction). One carrier C is placed on each carrier placement section 721. The carrier C accommodates a plurality of substrates W. For example, a front opening unified pod (FOUP) is applied to the carrier C.

The transport space 722 is located behind the carrier mounting section 721 (in the +X direction). The conveyance space 722 extends in the width direction (±Y direction). The first transport mechanism 723 is located in the transport space 722.

The first transport mechanism 723 is located behind the carrier mounting section 721 (in the +X direction). The first transport mechanism 723 transports the substrate W. The first transport mechanism 723 accesses the carrier C placed on the carrier placement section 721.

The first transport mechanism 723 includes a hand 7231 and a hand drive section 7232. The hand 7231 supports one substrate W in a horizontal position. The hand driving section 7232 is connected to the hand 7231 and moves the hand 7231. Specifically, the hand drive unit 7232 moves the hand 7231 in the front-back direction (±X direction), the width direction (±Y direction), and the up-down direction (±Z direction). Hand drive unit 7232 has multiple electric motors.

As shown in FIGS. 1 and 2, the hand drive section 7232 includes, for example, a rail 7232a, a horizontal movement section 7232b, a vertical movement section 7232c, a rotation section 7232d, and a forward/backward movement section 7232e.

The rail 7232a is fixed to the bottom of the transport space 722, for example. The rail 7232a extends in the width direction (±Y direction).

Horizontal moving part 7232b is supported by rails 7232a. The horizontal moving part 7232b moves in the width direction (±Y direction) with respect to the rail 7232a.

The vertical moving section 7232c is supported by the horizontal moving section 7232b. The vertical moving section 7232c moves in the vertical direction relative to the horizontal moving section 7232b.

The rotating part 7232d is supported by the vertical moving part 7232c. The rotating part 7232d rotates with respect to the vertical moving part 7232c. The rotating portion 7232d rotates around the rotation axis A1. The rotation axis A1 is an imaginary line extending in the vertical direction.

The forward/backward moving section 7232e moves relative to the rotating section 7232d. The advancing/retreating portion 7232e reciprocates along the horizontal direction determined by the orientation of the rotating portion 7232d. The forward/backward moving unit 7232e is connected to the hand 7231.

With such a hand drive unit 7232, the hand 7231 can achieve parallel movement in the vertical direction, parallel movement in an arbitrary horizontal direction, and rotational movement about the rotation axis A1.

<1-2. Processing block configuration>
FIG. 3 is a vertical cross-sectional view schematically showing an example of a vertical cross-section of the substrate processing apparatus 790 in FIG. 1 taken along the line III--III and viewed in the rear direction (+X direction). FIG. 4 is a side view schematically showing an example of the configuration of the left (-Y direction) portion (also referred to as the left part) of the processing block 793 when viewed along the left direction (-Y direction). FIG. 5 is a side view schematically showing an example of the configuration of the right (+Y direction) portion (also referred to as right portion) of the processing block 793 as viewed along the right direction (+Y direction).

For example, as shown in FIGS. 1 to 5, the processing block 793 includes two transport spaces 74A and 74B, two second transport mechanisms 75A and 75B, and a plurality of (here, 24) processing units. 76, two substrate mounting parts 77A and 77B, one partition 73w, and a horizontal exhaust system 780.

The transport space 74A is located at the center of the processing block 793 in the width direction (±Y direction). The conveyance space 74A extends in the front-rear direction (±X direction). A front portion (also referred to as a front portion) of the conveyance space 74A is connected to the conveyance space 722 of the indexer section 792.

The transport space 74B has substantially the same shape as the transport space 74A. Specifically, the transport space 74B is located at the center of the processing block 793 in the width direction (±Y direction). The conveyance space 74B extends in the front-rear direction (±X direction). A front portion (also referred to as a front portion) of the conveyance space 74B is connected to the conveyance space 722 of the indexer section 792.

The conveyance space 74B is located below the conveyance space 74A. The conveyance space 74B is located so as to overlap the conveyance space 74A in plan view. If the transport spaces 74A, 74B are not distinguished from each other, they are both simply referred to as transport space 74.

The partition wall 73w has, for example, a horizontal plate shape. The partition wall 73w is located below the transport space 74A and above the transport space 74B. The partition wall 73w separates the transport space 74A from the transport space 74B.

The substrate platform 77A is located in the transport space 74A. The substrate platform 77A is located at the front of the transfer space 74A. The first transport mechanism 723 of the indexer section 792 also accesses the substrate platform 77A. One or more substrates W are placed on the substrate platform 77A.

The substrate platform 77B is located in the transport space 74B. The substrate platform 77B is located below the substrate platform 77A. The substrate platform 77B is located at the front of the transfer space 74B. The substrate platform 77B is positioned so as to overlap the substrate platform 77A in plan view. The substrate platform 77B is located at the same position as the substrate platform 77A in plan view.

The first transport mechanism 723 of the indexer section 792 also accesses the substrate platform 77B. One or more substrates W are placed on the substrate platform 77B. When the substrate rests 77A and 77B are not distinguished from each other, they are both simply referred to as the substrate rest 77.

The second transport mechanism 75A is located in the transport space 74A. The second transport mechanism 75A transports the substrate W. The second transport mechanism 75A accesses the substrate platform 77A.

The second transport mechanism 75B is located in the transport space 74B. The second transport mechanism 75B transports the substrate W. The second transport mechanism 75B has the same structure as the second transport mechanism 75A. The second transport mechanism 75B accesses the substrate platform 77B. When the second transport mechanisms 75A and 75B are not distinguished from each other, they are both simply referred to as the second transport mechanism 75.

Each of the second transport mechanisms 75 includes a hand 751 and a hand drive section 752. The hand 751 supports one substrate W in a horizontal position. The hand driving section 752 is connected to the hand 751. The hand drive unit 752 moves the hand 751 in the front-back direction (±X direction), the width direction (±Y direction), and the up-down direction. Hand drive section 752 includes a plurality of electric motors.

Specifically, the hand drive section 752 includes, for example, two support columns 752a, a vertical movement section 752b, a horizontal movement section 752c, a rotation section 752d, and a forward/backward movement section 752e.

The two pillars 752a are fixed to the sides of the transport space 722, for example. The two pillars 752a are arranged in the front-rear direction (±X direction). Each support column 752a extends in the vertical direction.

The vertical moving part 752b is supported by two pillars 752a. The vertical moving part 752b extends in the front-rear direction (±X direction) and is constructed between the two pillars 752a. The vertical moving part 752b moves in the vertical direction with respect to the two pillars 752a.

The horizontal moving section 752c is supported by the vertical moving section 752b. The horizontal moving section 752c moves in the front-rear direction (±X direction) with respect to the vertical moving section 752b. The horizontal moving part 752c moves in the front-rear direction (±X direction) between the two pillars 752a.

The rotating part 752d is supported by the horizontal moving part 752c. The rotating section 752d rotates with respect to the horizontal moving section 752c. The rotating portion 752d rotates around the rotation axis A2. The rotation axis A2 is an imaginary line extending in the vertical direction.

The forward/backward moving section 752e moves relative to the rotating section 752d. The advancing/retreating portion 752e reciprocates in the horizontal direction determined by the orientation of the rotating portion 752d. The forward/backward moving unit 752e is connected to the hand 751.

With such a hand drive unit 752, the hand 751 executes parallel movement in the vertical direction, parallel movement in an arbitrary horizontal direction, and rotational movement about the rotation axis A2.

Each of the 24 processing units 76 performs a predetermined process on the substrate W transported by the second transport mechanism 75.

Processing block 793 includes six processing units 76A, six processing units 76B, six processing units 76C, and six processing units 76D. When processing units 76A, 76B, 76C, and 76D are not distinguished from each other, they are all simply referred to as processing unit 76.

The six processing units 76A are vertically stacked. In other words, the six processing units 76A are arranged in a line in the vertical direction. The six processing units 76B are vertically stacked. In other words, the six processing units 76B are arranged in a line in the vertical direction. The six processing units 76C are vertically stacked. In other words, the six processing units 76C are arranged in a line in the vertical direction. The six processing units 76D are vertically stacked. In other words, the six processing units 76D are arranged in a line in the vertical direction.

Each of the six processing units 76A, six processing units 76B, six processing units 76C, and six processing units 76D is included in the above-mentioned tower (here, four towers).

The six processing chambers 761 in the six processing units 76A are stacked in the vertical direction. The six processing chambers 761 in the six processing units 76B are stacked in the vertical direction. The six processing chambers 761 in the six processing units 76C are stacked in the vertical direction. The six processing chambers 761 in the six processing units 76D are stacked in the vertical direction.

The six processing units 76A and the six processing units 76B are located on the left side (-Y direction) of the transport spaces 74A and 74B. The six processing units 76A and the six processing units 76B are lined up in the front-rear direction (±X direction) along the transport spaces 74A and 74B. The six processing units 76B are located behind the six processing units 76A (in the +X direction).

The six processing units 76C and the six processing units 76D are located on the right side (+Y direction) of the transport spaces 74A and 74B. The six processing units 76C and the six processing units 76D are arranged in the front-rear direction (±X direction) along the transport spaces 74A and 74B. The six processing units 76D are located behind the six processing units 76C (in the +X direction).

The six processing units 76A and the six processing units 76C face each other across the transport spaces 74A and 74B. The six processing units 76B and the six processing units 76D face each other with the transport spaces 74A and 74B interposed therebetween.

The second transport mechanism 75 accesses the holding section 711 of the processing unit 76 . The second transport mechanism 75A located above the partition wall 73w transports the substrate W to the upper 12 processing units 76 (4 units x upper 3 stages) of the 24 processing units 76, and The substrates W are carried out from the upper 12 processing units 76. The second transport mechanism 75B located below the partition wall 73w transports the substrate W to the lower 12 processing units 76 (4 units×lower 3 stages) among the 24 processing units 76. The substrates W are carried out from the lower 12 processing units 76.

<1-3. Processing unit configuration>
FIG. 6 is a cross-sectional view schematically showing the configuration of the processing unit 76, taking the processing unit 76A as an example. Each processing chamber 761 is adjacent to the transfer space 74 .

FIG. 7 is a vertical cross-sectional view schematically showing a schematic configuration of the processing unit 76, taking a processing unit 76C as an example.

As shown in FIGS. 6 and 7, each processing unit 76 includes a processing chamber 761 (also referred to as a chamber or a processing case), a supply pipe space 762, and an exhaust pipe space 763. For example, multiple processing units 76 have the same structure.

<1-4. Processing room configuration>
The processing chamber 761 has, for example, a substantially box shape. For example, the processing chamber 761 has a substantially rectangular shape in plan view, front view, and side view. The processing chamber 761 has a processing space 761s therein. The processing unit 76 processes the substrate W in the processing space 761s. In FIG. 6, the outer edge of the substrate W held by the holding part 711 is indicated by a broken line.

The processing chamber 761 has a substrate transfer port 761o on the transfer space 74 side. The substrate transfer port 761o is formed in the side wall of the processing chamber 761. The substrate transfer port 761o has a size that allows the substrate W to pass through. The second transport mechanism 75 transfers the substrate between the outside of the processing chamber 761 (specifically, the transport space 74) and the inside of the processing chamber 761 (specifically, the processing space 761s) via the substrate transport port 761o. Move W. Each processing unit 76 has a shutter (not shown) that opens and closes the substrate transfer port 761o.

Each of the processing units 76 includes, for example, a holding section 711 and a fluid supply section 712.

The holding part 711 is located inside the processing chamber 761. The holding part 711 holds the substrate W. More specifically, the holding unit 711 holds one substrate W in a horizontal position. The holding part 711 includes, for example, a part (also referred to as a driving part) that rotates the substrate W held by the holding part 711 around a virtual axis of rotation A3 along the vertical direction.

A spin chuck is applied to the holding part 711. The spin chuck, for example, rotates the substrate W around a rotation axis A3 that passes through the center of the substrate W and extends in the vertical direction.

Specifically, the spin chuck includes a chuck pin (chuck member) 711p, a spin base 711b, a rotating shaft 711s coupled to the center of the lower surface of the spin base 711b, and a drive unit that provides rotational force to the rotating shaft 711s. An electric motor 711m is included.

The rotation axis 711s extends in the vertical direction along the rotation axis A3. For example, the rotating shaft 711s is a hollow shaft.

A spin base 711b is coupled to the upper end of the rotating shaft 711s. The spin base 711b has a disk shape along the horizontal direction. The spin base 711b has a circular shape centered on the rotation axis A3 when viewed from above, and has a diameter larger than the diameter of the substrate W. A plurality of (for example, six) chuck pins 711p are positioned at intervals in the circumferential direction on the peripheral edge of the upper surface of the spin base 711b.

The plurality of chuck pins 711p can be opened and closed between a closed state in which they contact the circumferential edge of the substrate W and grip the substrate W, and an open state in which they are retracted from the circumferential edge of the substrate W. For example, in the open state, the plurality of chuck pins 711p contact the lower surface of the peripheral edge of the substrate W to support the substrate W from below.

The chuck pin 711p is driven to open and close by a unit including, for example, a link mechanism built into the spin base 711b and a drive source located outside the spin base 711b. The drive source includes, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

Each of the processing units 76 includes, for example, a heater unit 719. Heater unit 719 is located above spin base 711b. A lift shaft 719r extending vertically along the rotation axis A3 is coupled to the lower surface of the heater unit 719.

The elevating shaft 719r is inserted into a through hole vertically penetrating the center of the spin base 711b and a hollow portion vertically penetrating the rotating shaft 711s.

The lower end of the elevating shaft 719r extends further downward than the lower end of the rotating shaft 711s. A lifting unit 719m is coupled to the lower end of the lifting shaft 719r. By operating the lifting unit 719m, the heater unit 719 is moved up and down between a lower position close to the upper surface of the spin base 711b and an upper position that supports the lower surface of the substrate W and lifts the substrate W from the chuck pin 711p. do.

The elevating unit 719m includes, for example, a ball screw mechanism and an electric motor that provides driving force thereto. Thereby, the elevating unit 719m can arrange the heater unit 719 at any intermediate position between the lower position and the upper position.

For example, it is possible to heat the substrate W by radiant heat from the heating surface 719u while the heating surface 719u, which is the upper surface of the heater unit 719, is placed at a separated position with a predetermined distance from the lower surface of the substrate W. can. For example, when the substrate W is lifted by the heater unit 719, the substrate W is heated with a larger amount of heat due to heat conduction from the heating surface 719u, with the heating surface 719u in contact with the lower surface of the substrate W.

The heater unit 719 has the form of a disc-shaped hot plate. Heater unit 719 includes a plate body, a plurality of support pins, and a heater. The upper surface of the plate body is a plane along a horizontal plane. The plate main body has a circular shape similar to the substrate W and a diameter slightly smaller than the diameter of the substrate W in a plan view.

The outer peripheral end of the plate body is located inside the plurality of chuck pins 711p. In other words, the plate body is surrounded by the plurality of chuck pins 711p in the horizontal direction. Thereby, when the heater unit 719 moves up and down, the heater unit 719 does not interfere with the chuck pin 711p.

Each of the plurality of support pins is, for example, a hemispherical pin located so as to slightly protrude upward from the upper surface of the plate main body. The plurality of support pins are substantially evenly arranged on the upper surface of the plate body. A plurality of support pins may not be present on the upper surface (heating surface 719u) of the plate body.

For example, when a plurality of substrates W are supported by contacting the support pins, the lower surface of the substrates W and the upper surface of the plate body (heating surface 719u) face each other with a small distance therebetween. Thereby, the substrate W can be efficiently and uniformly heated by the heater unit 719.

For example, a resistor built into the plate body is used as the heater. The upper surface (heating surface 719u) of the plate body can be heated to a temperature higher than the boiling point of the organic solvent, for example, by applying electricity to a heater. A power supply line to the heater is passed through the lifting shaft 719r. A current supply unit 719e that supplies power to the heater is connected to the power supply line.

Each of the processing units 76 includes, for example, a cylindrical cup 717 surrounding the holding portion 711 inside the processing chamber 761.

The fluid supply unit 712 supplies multiple types of fluids to the substrate W held by the holding unit 711, for example. The plurality of types of fluids include, for example, processing liquids such as chemical liquids, rinsing liquids, and organic solvents. The chemical liquid includes, for example, an etching liquid and a cleaning liquid. For example, acidic liquid (acid-based liquid) and alkaline liquid (alkaline-based liquid) are applied to the chemical liquid.

Examples of acidic liquids include hydrofluoric acid (hydrofluoric acid), hydrochloric acid/hydrogen peroxide mixture (SC2), sulfuric acid, sulfuric acid/hydrogen peroxide (SPM), hydrofluoric nitric acid (mixture of hydrofluoric acid and nitric acid), and at least one of hydrochloric acid.

The alkaline liquid includes, for example, at least one of ammonia hydrogen peroxide solution (SC1), ammonia water, ammonium fluoride solution, and tetramethylammonium hydroxide (TMAH).

The rinsing liquid is, for example, a liquid for washing away a chemical solution on the substrate W. For example, deionized water (DIW) is applied as the rinsing liquid.

The organic solvent is, for example, a liquid for removing the rinsing liquid on the substrate W. For example, isopropyl alcohol (IPA) is used as the organic solvent.

The plurality of fluids include, for example, a gas such as an inert gas. For example, nitrogen gas or the like is applied to the inert gas.

The fluid supply unit 712 includes, for example, a first moving nozzle 71n, a second moving nozzle 72n, and a third moving nozzle 73n, each of which discharges a predetermined fluid.

The first moving nozzle 71n is moved in the horizontal direction by the first moving unit 71M. By moving in the horizontal direction, the first movable nozzle 71n moves to a position facing the rotation center of the upper surface Wa of the substrate W held by the holding part 711 (hereinafter also referred to as "first ejection position") and a position opposite to the rotation center of the upper surface Wa of the substrate W held by the holding part 711, The substrate W held by the substrate 711 can be moved to a position not facing the upper surface Wa (hereinafter also referred to as a "first home position").

The first discharge position may be, for example, a position where the first processing liquid discharged from the first movable nozzle 71n lands on the rotation center of the upper surface of the substrate W. The first home position is a position outside the holding portion 711 in plan view. More specifically, the first home position may be a position outside the cup 717 in plan view.

The first moving nozzle 71n may be brought close to the upper surface Wa of the substrate W held by the holding part 711 by vertical movement by the first moving unit 71M, or the first moving nozzle 71n may be brought close to the upper surface Wa of the substrate W held by the holding part 711. It may be retracted upward from the upper surface Wa.

The first moving unit 71M includes, for example, a first rotation shaft 71s extending in the vertical direction, a first arm 71a coupled to the first rotation shaft 71s and extending horizontally, and a first arm driving the first arm 71a. A drive mechanism 71m is included.

The first arm drive mechanism 71m swings the first arm 71a by rotating the first rotation shaft 71s about a virtual rotation axis A4 extending in the vertical direction. The first movable nozzle 71n is attached to a portion of the first arm 71a that is horizontally distant from the rotation axis A4.

In response to the swing of the first arm 71a, the first movable nozzle 71n moves along an arcuate trajectory in the horizontal direction, as shown by the two-dot chain arrow in FIG. The first arm drive mechanism 71m may move the first arm 71a up and down, for example, by raising and lowering the first rotation shaft 71s along the vertical direction.

The first moving nozzle 71n has a function of supplying the first processing liquid (also referred to as the first processing liquid) to the upper surface Wa of the substrate W held by the holding part 711. A first processing liquid supply pipe P1 that functions as a pipe for supplying the first processing liquid is coupled to the first moving nozzle 71n.

The first processing liquid supply pipe P1 is provided with a first processing liquid opening/closing valve V1 that functions as a valve that opens and closes the flow path of the first processing liquid supply pipe P1. The first processing liquid is supplied to the first processing liquid supply pipe P1 from a processing liquid distribution section 701 or a processing liquid distribution section 702, which will be described later. Here, an acidic liquid such as sulfuric acid (HSO) is applied as the first treatment liquid. The first moving nozzle 71n may be a straight nozzle that discharges the first treatment liquid, or may be a two-fluid nozzle that discharges a mixture of the first treatment liquid and an inert gas.

The second moving nozzle 72n is moved in the horizontal direction by the second moving unit 72M. By moving in the horizontal direction, the second movable nozzle 72n moves to a position facing the rotation center of the upper surface Wa of the substrate W held by the holding part 711 (hereinafter also referred to as a "second ejection position") and a position opposite to the rotation center of the upper surface Wa of the substrate W held by the holding part 711. The substrate W held by the substrate 711 can be moved to a position not facing the upper surface Wa (hereinafter also referred to as a "second home position").

The second discharge position may be, for example, a position where the second processing liquid discharged from the second movable nozzle 72n lands on the rotation center of the upper surface of the substrate W. The second home position is a position outside the holding part 711 in plan view. More specifically, the second home position may be a position outside the cup 717 in plan view.

The second moving nozzle 72n may be brought close to the upper surface Wa of the substrate W held by the holding part 711 by vertical movement by the second moving unit 72M, or the second moving nozzle 72n may be brought close to the upper surface Wa of the substrate W held by the holding part 711. It may be retracted upward from the upper surface Wa.

The second moving unit 72M includes, for example, a second rotation shaft 72s that extends in the vertical direction, a second arm 72a that is coupled to the second rotation shaft 72s and extends horizontally, and a second arm that drives the second arm 72a. A drive mechanism 72m is included.

The second arm drive mechanism 72m swings the second arm 72a by rotating the second rotation shaft 72s about a virtual rotation axis A5 extending in the vertical direction. The second moving nozzle 72n is attached to a part of the second arm 72a that is horizontally distant from the rotation axis A5.

In response to the swinging of the second arm 72a, the second moving nozzle 72n moves along an arcuate trajectory in the horizontal direction, as shown by the two-dot chain arrow in FIG. The second arm drive mechanism 72m may move the second arm 72a up and down, for example, by raising and lowering the second rotation shaft 72s along the up and down direction.

The second moving nozzle 72n has a function of supplying the second processing liquid (also referred to as second processing liquid) to the upper surface Wa of the substrate W held by the holding part 711. A second processing liquid supply pipe P2 that functions as a pipe for supplying the second processing liquid is coupled to the second moving nozzle 72n.

The second processing liquid supply pipe P2 is provided with a second processing liquid opening/closing valve V2 that functions as a valve that opens and closes the flow path of the second processing liquid supply pipe P2. The second processing liquid is supplied to the second processing liquid supply pipe P2 from a processing liquid distribution section 701 or a processing liquid distribution section 702, which will be described later. Here, an alkaline solution such as ammonia hydrogen peroxide solution (SC1) is applied to the second treatment solution. The second moving nozzle 72n may be a straight nozzle that discharges the second processing liquid, or may be a two-fluid nozzle that discharges a mixture of the second processing liquid and an inert gas.

The third moving nozzle 73n is moved in the horizontal direction by the third moving unit 73M. By moving in the horizontal direction, the third moving nozzle 73n moves to a position facing the rotation center of the upper surface Wa of the substrate W held by the holding part 711 (hereinafter also referred to as a "third ejection position") and a position opposite to the rotation center of the upper surface Wa of the substrate W held by the holding part 711. The substrate W held by the substrate 711 can be moved to a position not facing the upper surface Wa (hereinafter also referred to as a "third home position").

The third discharge position may be, for example, a position where the third processing liquid discharged from the third movable nozzle 73n lands on the rotation center of the upper surface of the substrate W. The third home position is a position outside the holding portion 711 in plan view. More specifically, the third home position may be a position outside the cup 717 in plan view.

The third moving nozzle 73n may be brought close to the upper surface Wa of the substrate W held by the holding part 711 by vertical movement by the third moving unit 73M, or the third moving nozzle 73n may be brought close to the upper surface Wa of the substrate W held by the holding part 711. It may be retracted upward from the upper surface Wa.

The third moving unit 73M includes, for example, a third rotation shaft 73s extending in the vertical direction, a third arm 73a coupled to the third rotation shaft 73s and extending horizontally, and a third arm driving the third arm 73a. A drive mechanism 73m is included.

The third arm drive mechanism 73m swings the third arm 73a by rotating the third rotation shaft 73s about a virtual rotation axis A6 extending along the vertical direction. The third moving nozzle 73n is attached to a portion of the third arm 73a that is horizontally distant from the rotation axis A6.

In response to the swinging of the third arm 73a, the third moving nozzle 73n moves along an arcuate trajectory in the horizontal direction, as shown by the two-dot chain arrow in FIG. The third arm drive mechanism 73m may vertically move the third arm 73a by raising and lowering the third rotation shaft 73s along the vertical direction.

The third moving nozzle 73n has a function of supplying a third processing liquid (also referred to as third processing liquid) to the upper surface Wa of the substrate W held by the holding part 711. A third processing liquid supply pipe P3 that functions as a pipe for supplying the third processing liquid is coupled to the third moving nozzle 73n.

The third processing liquid supply pipe P3 is provided with a third processing liquid opening/closing valve V3 that functions as a valve that opens and closes the flow path of the third processing liquid supply pipe P3. The third processing liquid is supplied to the third processing liquid supply pipe P3 from a processing liquid distribution section 701 or a processing liquid distribution section 702, which will be described later. Here, a rinsing liquid such as deionized water (DIW) is applied to the third processing liquid. The third moving nozzle 73n may be a straight nozzle that discharges the third processing liquid, or may be a two-fluid nozzle that discharges a mixture of the third processing liquid and an inert gas.

The processing unit 76 includes, for example, a fan filter unit (FFU) as an air supply section 718. The FFU can further purify the air in the clean room in which the substrate processing apparatus 790 is installed and supply it to the processing chamber 761.

The FFU is attached to the ceiling wall of the processing chamber 761, for example. The FFU is equipped with a fan, a filter (for example, a HEPA filter), etc. for taking in air in the clean room and sending it into the processing chamber 761, and can form a downflow of clean air within the processing chamber 761. In order to more evenly disperse the clean air supplied from the FFU into the processing chamber 761, a punching plate with a large number of blow-off holes may be placed directly under the ceiling wall.

For example, an exhaust port 762o that is connected to the outside of the substrate processing apparatus 790 (factory exhaust equipment, etc.) is provided in a part of the side wall of the processing chamber 761 and near the floor wall of the processing chamber 761. It will be done. For example, among the clean air supplied from the FFU and flowing down inside the processing chamber 761, the air that has passed near the cup 717 and the like is exhausted to the outside of the substrate processing apparatus 790 via the exhaust port 762o. For example, a configuration may be added in which an inert gas such as nitrogen gas is introduced into the upper part of the processing chamber 761.

<1-5. Supply pipe space configuration>
As shown in FIGS. 4 and 5, four supply tube spaces 762 extend in the vertical direction. For example, one supply pipe space 762A extends in the vertical direction from the lowest stage (first stage) processing unit 76A to the highest stage (sixth stage) processing unit 76A. For example, one supply pipe space 762B extends in the vertical direction from the lowest stage (first stage) processing unit 76B to the highest stage (sixth stage) processing unit 76B. For example, one supply pipe space 762C extends in the vertical direction from the lowest stage (first stage) processing unit 76C to the highest stage (sixth stage) processing unit 76C. For example, one supply pipe space 762D extends in the vertical direction from the lowest stage (first stage) processing unit 76D to the highest stage (sixth stage) processing unit 76D. When the feed tube spaces 762A-62D are not distinguished from each other, they are all simply referred to as feed tube spaces 762.

The supply pipe space 762 is an area where piping for supplying fluid to the processing chamber 761 is arranged. The supply pipe space 762 includes, for example, a first processing liquid supply pipe P1, a second processing liquid supply pipe P2, a third processing liquid supply pipe P3, a first processing liquid on-off valve V1, a second processing liquid on-off valve V2, and a third processing liquid supply pipe P3. 3 processing liquid on/off valve V3 is arranged. The first processing liquid supply pipe P1, the second processing liquid supply pipe P2, and the third processing liquid supply pipe P3 are drawn out from the supply pipe space 762 into the processing chamber 761, and are connected to the first moving nozzle 71n and the second moving nozzle 72n. , are connected to the third moving nozzle 73n.

<1-6. Configuration of exhaust pipe space>
As shown in FIGS. 4 and 5, four exhaust pipe spaces 763 extend in the vertical direction. For example, one exhaust pipe space 763A extends in the vertical direction from the lowest stage (first stage) processing unit 76A to the highest stage (sixth stage) processing unit 76A. For example, one exhaust pipe space 763B extends in the vertical direction from the lowest stage (first stage) processing unit 76B to the highest stage (sixth stage) processing unit 76B. For example, one exhaust pipe space 763C extends in the vertical direction from the lowest stage (first stage) processing unit 76C to the highest stage (sixth stage) processing unit 76C. For example, one exhaust pipe space 763D extends in the vertical direction from the lowest stage (first stage) processing unit 76D to the highest stage (sixth stage) processing unit 76D. If the exhaust pipe spaces 763A-63D are not distinguished from each other, they are all simply referred to as exhaust pipe spaces 763.

Each exhaust pipe space 763 is an area where piping for exhausting gas from the processing chamber 761 is arranged. As shown in FIGS. 4 to 7, each exhaust pipe space 763 is provided with, for example, an exhaust path switching mechanism 770, a first vertical exhaust pipe 771, a second vertical exhaust pipe 772, and a third vertical exhaust pipe 773. Ru.

For example, in the exhaust pipe space 763A, an exhaust path switching mechanism is provided for each of the processing chambers 761 of the processing unit 76A at the bottom stage (first stage) to the processing chamber 761 of the processing unit 76A at the top stage (sixth stage). 770 is allocated. For example, in the exhaust pipe space 763B, an exhaust path switching mechanism is provided for each of the processing chambers 761 of the processing unit 76B at the bottom stage (first stage) to the processing chamber 761 of the processing unit 76B at the top stage (sixth stage). 770 is allocated. For example, in the exhaust pipe space 763C, an exhaust path switching mechanism is provided for each of the processing chambers 761 of the processing unit 76C at the bottom stage (first stage) to the processing chamber 761 of the processing unit 76C at the top stage (sixth stage). 770 is allocated. For example, in the exhaust pipe space 763D, an exhaust path switching mechanism is provided for each of the processing chambers 761 of the lowermost (first stage) processing unit 76D to the processing chamber 761 of the uppermost (sixth stage) processing unit 76D. 770 is allocated.

For example, there are four sets of the first vertical exhaust pipe 771, the second vertical exhaust pipe 772, and the third vertical exhaust pipe 773. The first vertical exhaust pipe 771, the second vertical exhaust pipe 772, and the third vertical exhaust pipe 773, for example, direct gas exhausted from the processing chamber 761 via the exhaust path switching mechanism 770 to the outside of the substrate processing apparatus 790. This is a pipe for discharging water.

In each of the exhaust pipe spaces 763, for example, each of the first vertical exhaust pipe 771, the second vertical exhaust pipe 772, and the third vertical exhaust pipe 773 extends from the side of the lowest stage (first stage) processing chamber 761 to the lowest stage. It extends to the side of the upper stage (sixth stage) processing chamber 761. In each of the exhaust pipe spaces 763, for example, the first vertical exhaust pipe 771, the second vertical exhaust pipe 772, and the third vertical exhaust pipe 773 are arranged in the width direction (±Y direction). In each of the exhaust pipe spaces 763, a first vertical exhaust pipe 771, a second vertical exhaust pipe 772, and a third vertical exhaust pipe 773 discharge exhaust gas from each of the processing chambers 761 of the six stages of processing units 76 stacked in the vertical direction. It has a function of discharging the gas flowing in through the path switching mechanism 770.

When the first vertical exhaust pipe 771 is distinguished between the processing units 76A to 76D, it is referred to as a first vertical exhaust pipe 771A to 771D. When the second vertical exhaust pipes 772 are distinguished between the processing units 76A-76D, they are referred to as second vertical exhaust pipes 772A-772D. When the third vertical exhaust pipe 773 is distinguished between the processing units 76A to 76D, it is referred to as a third vertical exhaust pipe 773A to 773D.

The first vertical exhaust pipe 771A, the second vertical exhaust pipe 772A, and the third vertical exhaust pipe 773A of the first set (first set) are configured to exhaust air to each of the six stages of processing units 76A. . The first vertical exhaust pipe 771B, second vertical exhaust pipe 772B, and third vertical exhaust pipe 773B of the second set (second set) are configured to exhaust air to each of the six stages of processing units 76B. . The first vertical exhaust pipe 771C, the second vertical exhaust pipe 772C, and the third vertical exhaust pipe 773C of the third set (third set) are configured to exhaust air to each of the six stages of processing units 76C. . The first vertical exhaust pipe 771D, the second vertical exhaust pipe 772D, and the third vertical exhaust pipe 773D of the fourth set (fourth set) are configured to exhaust air to each of the six stages of processing units 76D. .

The exhaust path switching mechanism 770 switches the gas exhaust path from the processing chamber 761 to the outside of the substrate processing apparatus 790 to any one of a first vertical exhaust pipe 771, a second vertical exhaust pipe 772, and a third vertical exhaust pipe 773. This is a mechanism for switching to an exhaust path via a vertical exhaust pipe.

The exhaust path switching mechanism 770 is arranged on each side of the processing chamber 761. The exhaust path switching mechanism 770 communicates with the processing chamber 761 via an exhaust port 762o, for example, to discharge gas from the processing chamber 761. Further, the exhaust path switching mechanism 770 communicates with, for example, a first vertical exhaust pipe 771, a second vertical exhaust pipe 772, and a third vertical exhaust pipe 773 that extend in the vertical direction.

As shown in FIG. 6, the exhaust path switching mechanism 770 includes, for example, a first opening/closing part 71d and a second opening/closing part 72d. The first opening/closing part 71d and the second opening/closing part 72d have, for example, a door-like structure and operate like a single door.

The first opening/closing part 71d and the second opening/closing part 72d are rotated about a rotation axis by driving of a motor or the like. The exhaust path switching mechanism 770 operates, for example, in a state (also referred to as a first state) in which gas flows into the first vertical exhaust pipe 771 from the processing space 761s by opening and closing the first opening/closing part 71d and the second opening/closing part 72d; Either a state where gas flows into the second vertical exhaust pipe 772 from the space 761s (also referred to as the second state) or a state where gas flows into the third vertical exhaust pipe 773 from the processing space 761s (also referred to as the third state). Set to one state.

For example, during a period in which the first chemical liquid is discharged from the first moving nozzle 71n, the exhaust path switching mechanism 770 is set to the first state. For example, during a period in which the second chemical liquid is discharged from the second moving nozzle 72n, the exhaust path switching mechanism 770 is set to the second state. For example, during a period in which the third chemical liquid is discharged from the third moving nozzle 73n, the exhaust path switching mechanism 770 is set to the third state.

<1-7. Horizontal exhaust system configuration>
As shown in FIGS. 3 to 5, the horizontal exhaust system 780 includes a first horizontal exhaust pipe 781A, a second horizontal exhaust pipe 782A, a third horizontal exhaust pipe 783A, a first horizontal exhaust pipe 781B, and a second horizontal exhaust pipe. 782B, and a third horizontal exhaust pipe 783B.

For example, as shown in FIGS. 3 and 4, the first horizontal exhaust pipe 781A, the second horizontal exhaust pipe 782A, and the third horizontal exhaust pipe 783A are connected to the two processing units 76A and 76B at the top stage (sixth stage). It is located above and extends in the front-rear direction (±X direction). The first horizontal exhaust pipe 781A, the second horizontal exhaust pipe 782A, and the third horizontal exhaust pipe 783A are arranged in the width direction (±Y direction), for example.

For example, a first vertical exhaust pipe 771A for the processing unit 76A and a first vertical exhaust pipe 771B for the processing unit 76B are connected to the first horizontal exhaust pipe 781A so as to communicate with each other. The first horizontal exhaust pipe 781A exhausts gas from the first vertical exhaust pipes 771A and 771B.

For example, a second vertical exhaust pipe 772A for the processing unit 76A and a second vertical exhaust pipe 772B for the processing unit 76B are connected to the second horizontal exhaust pipe 782A so as to communicate with each other. The second horizontal exhaust pipe 782A exhausts gas from the second vertical exhaust pipes 772A and 772B.

For example, a third vertical exhaust pipe 773A for the processing unit 76A and a third vertical exhaust pipe 773B for the processing unit 76B are connected to the third horizontal exhaust pipe 783A so as to communicate with each other. The third horizontal exhaust pipe 783A exhausts gas from the third vertical exhaust pipes 773A and 773B.

For example, as shown in FIGS. 3 and 5, the first horizontal exhaust pipe 781B, the second horizontal exhaust pipe 782B, and the third horizontal exhaust pipe 783B are connected to the two processing units 76C and 76D at the top (sixth stage). It is located above and extends in the front-rear direction (±X direction). The first horizontal exhaust pipe 781B, the second horizontal exhaust pipe 782B, and the third horizontal exhaust pipe 783B are arranged in the width direction (±Y direction), for example.

For example, a first vertical exhaust pipe 771C for the processing unit 76C and a first vertical exhaust pipe 771D for the processing unit 76D are connected to the first horizontal exhaust pipe 781B so as to communicate with each other. The first horizontal exhaust pipe 781B exhausts gas from the first vertical exhaust pipes 771C and 771D.

For example, a second vertical exhaust pipe 772C for the processing unit 76C and a second vertical exhaust pipe 772D for the processing unit 76D are connected to the second horizontal exhaust pipe 782B so as to communicate with each other. The second horizontal exhaust pipe 782B exhausts gas from the second vertical exhaust pipes 772C and 772D.

For example, a third vertical exhaust pipe 773C for the processing unit 76C and a third vertical exhaust pipe 773D for the processing unit 76D are connected to the third horizontal exhaust pipe 783B so as to communicate with each other. The third horizontal exhaust pipe 783B exhausts gas from the third vertical exhaust pipes 773C and 773D.

The first horizontal exhaust pipe 781A, the second horizontal exhaust pipe 782A, and the third horizontal exhaust pipe 783A are longer than the first horizontal exhaust pipe 781B, the second horizontal exhaust pipe 782B, and the third horizontal exhaust pipe 783B.

Gas flows backward through each of the first horizontal exhaust pipe 781A, second horizontal exhaust pipe 782A, third horizontal exhaust pipe 783A, first horizontal exhaust pipe 781B, second horizontal exhaust pipe 782B, and third horizontal exhaust pipe 783B. (+X direction).

The substrate processing apparatus 790 has an exhaust section 768 including, for example, four exhaust pipe spaces 763 and a horizontal exhaust system 780, and the exhaust section 768 connects the processing chamber 761 to the outside of the substrate processing apparatus 790 (factory exhaust equipment). etc.).

A processing liquid storage section 705 is provided at the rear of the substrate processing apparatus 790 (in the +X direction). The processing liquid storage unit 705 stores processing liquid distribution units 701 and 702 and processing liquid supply sources 703 and 704. For example, the processing liquid supply source 703 stores a chemical solution, and the processing liquid supply source 704 stores a rinsing liquid.

Both processing liquid distribution units 701 and 702 obtain processing liquid, specifically, a chemical liquid from a processing liquid supply source 703 and a rinsing liquid from a processing liquid supply source 704, respectively. The processing liquid distribution section 701 distributes the processing liquid to the processing units 76C and 76D. The processing liquid distribution section 702 distributes the processing liquid to the processing units 76A and 76B.

Piping for supplying the processing liquid from the processing liquid distribution section 701 to the processing units 76C and 76D is provided in the supply pipe spaces 762C and 762D, respectively. Piping for supplying the processing liquid from the processing liquid distribution section 702 to the processing units 76A and 76B is provided in the supply pipe spaces 762A and 762B, respectively.

<1-8. Control system of substrate processing equipment>
For example, as shown in FIG. 1, the substrate processing apparatus 790 includes a control section 79. The control unit 79 is, for example, a part for controlling the operation of each component of the substrate processing apparatus 790.

FIG. 8 is a block diagram showing a functional configuration for controlling the operation of each component of the substrate processing apparatus 790. The control unit 79 is communicatively connected to the first transport mechanism 723, the second transport mechanism 75, the plurality of processing units 76, and the horizontal exhaust system 780.

More specifically, the control unit 79 is communicably connected to, for example, each element to be controlled among the plurality of processing units 76 and the horizontal exhaust system 780. Thereby, the control unit 79 can control, for example, the operations of the first transport mechanism 723, the second transport mechanism 75, the plurality of processing units 76, and the horizontal exhaust system 780.

FIG. 9 is a block diagram showing an example of the configuration of the control section 79. As shown in FIG. The control unit 79 is realized by, for example, a general computer. The control unit 79 includes, for example, a communication unit 791, an input unit 797, an output unit 798, a storage unit 794, a processing unit 795, and a drive 796, which are connected via a bus line 79Bu.

The communication unit 791 transmits and receives signals to and from each of the first transport mechanism 723, the second transport mechanism 75, the plurality of processing units 76, and the horizontal exhaust system 780 via communication lines, for example. The communication unit 791 may receive a signal from a management server for managing the substrate processing apparatus 790, for example.

The input unit 797 inputs a signal corresponding to, for example, an operator's movement. The input unit 797 includes, for example, an operation unit such as a mouse and a keyboard that can input a signal according to an operation, a microphone that can input a signal according to voice, and various sensors that can input a signal according to movement.

The output unit 798 outputs, for example, various types of information in a form that can be recognized by the operator. The output unit 798 includes, for example, a display unit that visually outputs various information, a speaker that outputs various information audibly, and the like. The display unit may have the form of a touch panel integrated with at least a portion of the input unit 797, for example.

The storage unit 794 stores, for example, the program Pg1 and various information. The storage unit 794 is configured with a nonvolatile storage medium such as a hard disk or flash memory, for example. The storage unit 794 may have, for example, a configuration including one storage medium, a configuration having two or more storage media integrally, or a configuration having two or more storage media divided into two or more parts. may be applied. The storage medium stores, for example, information regarding operating conditions of the first transport mechanism 723, the second transport mechanism 75, the plurality of processing units 76, and the horizontal exhaust system 780. The information regarding the operating conditions of the processing unit 76 includes, for example, a processing recipe for processing the substrate W.

The processing unit 795 includes, for example, an arithmetic processing unit 795a that functions as a processor, a memory 795b that serves as a work area for arithmetic processing, and the like. For example, an electronic circuit such as a central processing unit (CPU) is applied to the arithmetic processing unit 795a, and for example, a RAM (Random Access Memory) or the like is applied to the memory 795b. The processing unit 795 realizes the functions of the control unit 79 by, for example, reading and executing the program Pg1 stored in the storage unit 794. Therefore, in the control unit 79, various functional units that control the operations of each unit of the substrate processing apparatus 790 are realized by, for example, the processing unit 795 performing arithmetic processing according to the procedure described in the program Pg1. That is, the functions and operations of the substrate processing apparatus 790 can be realized by executing the program Pg1 by the control unit 79 included in the substrate processing apparatus 790. Some or all of the functional units implemented by the control unit 79 may be implemented in hardware using, for example, a dedicated logic circuit.

The drive 796 is, for example, a portion to which a portable storage medium Sm1 can be attached and detached. For example, the drive 796 allows data to be exchanged between the storage medium Sm1 and the processing unit 795 in a state where the storage medium Sm1 is attached. The drive 796 reads the program Pg1 into the storage unit 794 from the storage medium Sm1 and stores the program Pg1 in a state where the storage medium Sm1 storing the program Pg1 is attached to the drive 796.

An example of the overall operation of the substrate processing apparatus 790 will be described. In the substrate processing apparatus 790, for example, the control section 79 controls each section of the substrate processing apparatus 790 according to a recipe that describes the transfer procedure and processing conditions of the substrate W, thereby performing the series of operations described below. executed.

When the carrier C containing the unprocessed substrate W is placed on the carrier mounting section 721, the first transport mechanism 723 takes out the unprocessed substrate W from the carrier C. The first transport mechanism 723 transports the unprocessed substrate W to the substrate platform 77 . The second transport mechanism 75 transports the unprocessed substrate W from the substrate platform 77 to a processing unit 76 specified by a recipe or the like. The transfer of the substrate W between the first transport mechanism 723 and the second transport mechanism 75 may be performed directly between the hand 7231 and the hand 751, for example, without going through the substrate platform 77.

The processing unit 76 into which the substrate W has been carried performs a predetermined series of substrate processing on the substrate W. In this series of substrate processing, for example, a chemical solution and a rinsing liquid are supplied to the upper surface Wa of the substrate W held by the holding part 711 in the order described above.

After the treatment with the rinsing liquid, an organic solvent may be supplied. After the treatment using the organic solvent, for example, a process (also referred to as a drying process) of removing the organic solvent from the upper surface Wa of the substrate W and drying the upper surface Wa of the substrate W is performed. In the drying process, for example, the substrate W held by the holding part 711 is rotated about the rotation axis A3 by an electric motor 711m serving as a driving part.

When a series of substrate processing for the substrate W is completed in the processing unit 76, the second transport mechanism 75 takes out the processed substrate W from the processing unit 76. The second transport mechanism 75 transports the processed substrate W to the substrate platform 77 . The first transport mechanism 723 transports the substrate W from the substrate platform 77 to the carrier C on the carrier platform 721 .

In the substrate processing apparatus 790, the first transport mechanism 723 and the second transport mechanism 75 repeatedly perform the above-described transport operation according to the recipe, and each processing unit 76 executes a series of substrate processing on the substrate W according to the processing recipe. do. As a result, a series of substrate treatments on the substrate W are performed one after another.

<2. Description of circulation device>
10 and 11 are piping diagrams illustrating the configuration of the circulation device 100. The circulation device 100 may be employed in both of the processing liquid distribution sections 701 and 702. External paths 71 and 72 connected to the circulation device 100 from the outside of the circulation device 100 are also added to FIG. 10 . The circulation device 100 supplies and collects processing liquid to the external paths 71 and 72. It can be said that the external paths 71 and 72 are paths for processing liquid in different towers.

When the circulation device 100 is employed as the processing liquid distribution unit 701, for example, the external path 71 is a pipe through which the processing liquid flows in the six processing units 76C, and the external path 72 is a pipe through which the processing liquid flows in the six processing units 76D. It's plumbing.

For example, the processing liquid is supplied and collected between the external route 71 and the six processing units 76C via piping 71b. For example, processing liquid is supplied and recovered between the external path 72 and the six processing units 76D via piping 72b. Piping 71b is provided in supply pipe space 762C, and piping 72b is provided in supply pipe space 762D.

When the circulation device 100 is employed as the processing liquid distribution unit 702, for example, the external path 71 is a pipe through which the processing liquid flows in the six processing units 76A, and the external path 72 is a pipe through which the processing liquid flows in the six processing units 76B. It's plumbing.

For example, the processing liquid is supplied and recovered between the external path 71 and the six processing units 76A via piping 71b. For example, processing liquid is supplied and collected between the external path 72 and the six processing units 76B via piping 72b. Piping 71b is provided in supply pipe space 762A, and piping 72b is provided in supply pipe space 762B.

The circulation device 100 includes a storage tank T. The storage tank T stores liquid Q. The liquid Q is the above-mentioned processing liquid, and is, for example, sulfuric acid or its diluted solution (dilute sulfuric acid).

The circulation device 100 includes piping 1. Piping 1 has an inlet end 101 and is used to supply liquid Q to external paths 71 and 72. Liquid Q flows into the inflow end 101 from the storage tank T.

The circulation device 100 includes piping 2. The pipe 2 has an outflow end 202 and is used for recovering the liquid Q via external paths 71 and 72. Liquid Q flows out from the outflow end 202 to the storage tank T.

The circulation device 100 includes a valve 13. The valve 13 is provided in the piping 1 and controls the supply of the liquid Q to the external paths 71 and 72. For example, an on-off valve is adopted as the valve 13.

The circulation in which the liquid Q flows out from the storage tank T and flows into the storage tank T via the pipes 1 and 2 and the valve 13 is called "external circulation."

The circulation device 100 includes a pump 12. A pump 12 is provided in the pipe 1. The pump 12 has an inlet 12a and an outlet 12b. The suction port 12a is connected to the inflow end 101. The pump 12 pumps out the liquid Q from the suction port 12a toward the discharge port 12b. The pump 12 is, for example, a rotary type, and for example, a magnetically levitated centrifugal pump is employed as the pump 12. For example, a bearingless pump manufactured by Levitronics is used as the magnetic levitation centrifugal pump.

The circulation device 100 includes a heater 11. The heater 11 is provided in the pipe 1 and connected to the discharge port 12b. The heater 11 heats the liquid Q.

The circulation device 100 includes piping 6. The pipe 6 is a path for the liquid Q stored in the storage tank T from the outside of the circulation device 100. For example, when the circulation device 100 is employed as the processing liquid distribution section 701, the piping 6 is connected to the processing liquid supply source 703. For example, when the circulation device 100 is employed as the processing liquid distribution section 702, the piping 6 is connected to the processing liquid supply source 704.

The circulation device 100 includes a valve 61 provided in the piping 6. Valve 61 controls the outflow of liquid Q into storage tank T. For example, an on-off valve is adopted as the valve 61.

The circulation device 100 includes piping 3. The pipe 3 is connected to the pipe 1 on the side opposite to the pump 12 with respect to the heater 11 . The pipe 3 has an outflow end 302. Liquid Q flows out from the outflow end 302 to the storage tank T. For example, the pipe 3 has an end 301, and the end 301 is connected to the pipe 1. End 301 is located between heater 11 and valve 13.

The circulation device 100 includes valves 31 and 32. The valve 31 is provided in the pipe 3 and controls the outflow of the liquid Q from the outflow end 302 to the storage tank T. For example, an on-off valve is adopted as the valve 31. The valve 32 is provided on the opposite side of the outflow end 302 with respect to the valve 31 . Valve 32 is a relief valve.

The circulation in which the liquid Q flows out from the storage tank T and flows into the storage tank T via the pipes 1 and 3 and the valves 31 and 32 is called "internal circulation."

The circulation device 100 includes a filter 16 . The filter 16 is provided in the pipe 1, for example, between the heater 11 and the end 301. The filter 16 has the function of removing impurities from the liquid Q.

The circulation device 100 includes a flow meter 15. The flow meter 15 is provided, for example, between the discharge port 12b and the heater 11. The flow meter 15 measures the flow rate of the liquid Q in the pipe 1.

The circulation device 100 includes a thermometer 17. The thermometer 17 is provided, for example, between the heater 11 and the filter 16. Thermometer 17 measures the temperature of liquid Q in pipe 1.

A valve 71c is provided in the external path 71 between the pipe 1 and the pipe 71b. A valve 72c is provided in the external path 72 between the pipe 1 and the pipe 72b. For example, on-off valves are employed as the valves 71c and 72c.

A valve 71e is provided in the external path 71 between the pipe 2 and the pipe 71b. A valve 72e is provided in the external path 72 between the pipe 2 and the pipe 72b. Valves 71e and 72e are relief valves.

The control unit 5 outputs a signal Sv to control the opening and closing of each valve 13, 31, 71c, and 72c.

The control unit 5 controls the operation of the heater 11 and the pump 12. For example, the control unit 5 outputs a control signal Sh to the heater 11 to control heating of the liquid Q by the heater 11. For example, the control unit 5 outputs a control signal Sp to the pump 12 to control the flow rate of the liquid Q by the pump 12.

The control unit 5 inputs data Fd indicating the flow rate of the liquid Q flowing through the pipe 1 from the flow meter 15 . The control unit 5 inputs data Td indicating the temperature of the liquid Q in the pipe 1 (hereinafter also simply referred to as "liquid temperature") from the thermometer 17.

For example, the control unit 5 may control the drive (for example, rotational speed and rotational acceleration) of the pump 12 using the control signal Sp based on the data Fd, or the control unit 5 may control the drive of the pump 12 using the control signal Sh based on the data Td. Controlling the heating of the liquid Q (for example, the rate of increase in temperature of the liquid) by the liquid Q is realized using well-known techniques. Therefore, details regarding the technology for realizing control of the pump 12 and heater 11 will be omitted.

The control unit 5 may be realized by part or all of the control unit 79, for example. The control unit 5 can also be understood as part of the circulation device 100.

Below, the relationship between the opening and closing operations of the valve, the liquid temperature (specifically, heating of the liquid Q), and the operation of the pump 12 (specifically, control of rotational acceleration) will be explained. In the following description, a black triangle is used as a pair of triangles forming a symbol representing a valve when the valve is in an open state, and a white triangle is used when the valve is in a closed state.

However, the white triangles illustrated in the valves 71e, 72e, and 32 that employ relief valves indicate closed states in the sense that relief of the liquid Q is not performed. Therefore, in the following description, the valve 71e does not inhibit the flow of the liquid Q in the external path 71, the valve 72e does not inhibit the flow of the liquid Q in the external path 72, and the valve 32 inhibits the flow of the liquid Q in the piping 3. do not.

In the following description, a description of the storage of the liquid Q in the storage tank T will be omitted. This explains the situation in which the valve 61 is in the closed state.

<2-1. Preparation before supplying processing liquid to external route>
Before supplying the processing liquid (liquid Q in this case) to the external routes 71 and 72, performing internal circulation to raise the processing liquid to a predetermined temperature is a good way to maintain the temperature of the processing liquid when used for processing. Contributes to temperature control. Figure 10 shows the situation of internal circulation. Specifically, valves 13, 71c, and 72c are closed, and valve 31 is opened.

In the internal circulation, the liquid Q returns to the storage tank T from the storage tank T via the pump 12, flow meter 15, heater 11, filter 16, end 301, valves 32, 31, and outflow end 302 in this order.

<2-2. Supply of processing liquid to external route>
The valves 13, 71c, and 72c are opened, and the processing liquid (liquid Q in this case) is supplied to the external paths 71 and 72, and external circulation is performed (see FIG. 11).

When the processing liquid is supplied to the external paths 71 and 72, not only external circulation but also internal circulation is used. The internal circulation while the external circulation is performed alleviates the variation in the pressure of the processing liquid in the circulation device 100 caused by the variation in the flow rate of the processing liquid flowing into the external paths 71 and 72.

<2-3. Increase in pump rotation speed and temperature rise by heater during internal circulation>
FIG. 12 is a graph showing an increase in the rotational speed of the pump 12 and an increase in the temperature of the liquid Q by the heater 11. Time is plotted on the horizontal axis, and liquid temperature CT of the liquid Q and rotational speed R of the pump 12 are plotted on the vertical axis. What is the flow rate of liquid Q? There is a positive correlation with the rotational speed R, and for example, it increases monotonically as the rotational speed R increases.

The polygonal lines Ga and Gb indicate changes in the liquid temperature CT over time. The polygonal lines Gc and Gd indicate changes in the rotational speed R over time. Solid broken lines Ga and Gc show an example (example) in which the technology proposed in this embodiment is adopted. Broken lines Gb and Gd indicate an example (comparative example) in which a technique compared with this embodiment is adopted. The portion where the polygonal lines Ga and Gb overlap is shown by a solid line.

For comparison between the example and the comparative example, in both cases, heating of the liquid Q is started at time t0 and the liquid temperature CT starts to rise, and at time t0, driving of the pump 12 is started and the rotation speed R of the pump 12 is increased. It is assumed that the

<2-4. Relationship between the temperature range of liquid temperature and the speed range of rotation speed>
In FIG. 12, a temperature range S1 from temperature C9 to temperature C1 and a temperature range S2 from temperature C1 to temperature C2 are shown. The temperature C0 is, for example, room temperature and is within the temperature range S1. The temperature C9 is, for example, 0°C. The temperature C2 is a predetermined temperature required for the processing liquid supplied to the external paths 71 and 72, and is, for example, 100°C. The temperature C1 is, for example, 40°C.

The upper limit α2 of the rotational acceleration in the temperature range S2 is set lower than the upper limit α1 of the rotational acceleration α of the pump in the temperature range S1 from the viewpoint of suppressing cavitation. For example, the upper limit α1 is 100 rpm/s, and the upper limit α2 is 50 rpm/s.

From the viewpoint of the viscosity of the liquid Q, a lower limit R1 and an upper limit R2 are set for the rotational speed R in the temperature range S2. For example, the lower limit R1 is 3000 rpm, and the upper limit R2 is 6000 rpm. The rotation speed R of the pump 12 at time t0 takes a low speed value R0. The value R0 is, for example, zero.

The upper limit R2 is set not only from the viewpoint of viscosity but also from the viewpoint required for the flow rate of the liquid Q in the internal circulation. For example, the upper limit R2 is set to a value that allows the flow rate required for the liquid Q to be obtained within a range where the rotational speed R adopted at the temperature C1, which is the lower limit of the temperature range S2, does not cause excessive pressure in the circulation device 100.

<2-5. Comparative example>
In the comparative example, as shown by the polygonal line Gb, the liquid Q is heated and the liquid temperature CT rises from the temperature C0 to the temperature C1 between time t0 and time t2. In the comparative example, as shown by the polygonal line Gd, the rotational speed R increases from the value R0 to the lower limit R1 between time t0 and time t3.

In the comparative example, the small rotational acceleration that is adopted in order to avoid cavitation when the liquid temperature is high and the viscosity is low is also adopted when the liquid temperature CT is low and the viscosity is high. For example, the upper limit α2 is adopted for the rotational acceleration α regardless of the liquid temperature CT.

At time t2, the liquid temperature CT transitions from the temperature range S1 to the temperature range S2. Since the rotational acceleration α is small, the rotational speed R has not yet reached the lower limit R1 at time t2. Therefore, from time t2 to time t3, the temperature increase rate β decreases in order to maintain the liquid temperature CT, and ideally the temperature increase rate β is zero.

When the rotational speed R reaches the lower limit R1 at time t3, the temperature of the liquid Q is raised again, and the liquid temperature CT reaches the temperature C2 at time t7. After time t7, the temperature increase rate β of the liquid temperature CT decreases, and ideally the temperature increase rate β is zero.

The rotation speed R continues to increase after time t3 and reaches the upper limit R2 at time t5. After time t5, the rotational acceleration α is reduced to maintain the rotational speed R at the upper limit R2, and ideally the rotational acceleration α is zero.

In this way, in the comparative example, the upper limit α2 in the temperature range S2 is also adopted as the rotational acceleration α in the temperature range S1, so that the time required for the rotational speed R to reach the lower limit R1 is long. It does not contribute to temperature rise between time t2 and time t3. Reflecting this, the time required for the liquid temperature CT to reach the temperature C2 becomes longer.

<2-6. Example>
In the embodiment, an upper limit α1 is adopted for the rotational acceleration α in the temperature range S1. As shown by the polygonal line Gc, the rotational speed R increases from the value R0 to the lower limit R1 between time t0 and time t1.

In the embodiment, the liquid Q is heated and the liquid temperature CT rises from the temperature C0 to the temperature C1 between time t0 and time t2, as shown by the polygonal line Ga.

At time t2, the liquid temperature transitions from temperature range S1 to temperature range S2. Since the rotational acceleration α is large, the rotational speed R reaches the lower limit R1 at time t1, as shown by the polygonal line Gc. Time t1 is earlier than time t2 (t1<t2).

Between time t1 and time t2, the rotational acceleration α decreases in order to maintain the rotational speed R at the lower limit R1, and ideally the rotational acceleration α becomes zero. This suppresses the generation of excessive pressure in the circulation device 100 (which is caused by an increase in the flow rate of the liquid Q in a situation where the temperature is high and the viscosity of the liquid Q is low).

When the liquid temperature CT reaches the temperature C1 at time t2, an upper limit α2 is adopted for the rotational acceleration α to avoid cavitation. At time t4, the rotational speed R reaches the upper limit R2. After time t4, the rotational acceleration α decreases in order to maintain the rotational speed R at the upper limit R2, and ideally the rotational acceleration α is zero.

The liquid temperature CT continues to rise from time t0 to time t6, and reaches temperature C2 at time t6. After time t6, the temperature increase rate β of the liquid temperature CT decreases, and ideally the temperature increase rate β is zero.

Reflecting the fact that time t1 is earlier than time t2, time t4 is earlier than time t5, and time t6 is earlier than time t7.

In the example, there is no need to maintain the liquid temperature CT between time t2 and time t3 as in the comparative example. A constant value β1 may be adopted as the temperature increase rate β until the liquid temperature CT reaches the temperature C2. Compared to the case where the temperature increase rate β decreases once before the liquid temperature CT reaches the temperature C2 (in the comparative example, the temperature increase rate β ideally becomes zero), the temperature increase rate β is set to a constant value. The adoption of β1 contributes to making the liquid temperature CT reach a desired temperature quickly.

In this way, the example sets the flow rate of the liquid Q due to the rotational speed R of the pump 12 and the liquid temperature CT due to the heating of the heater 11 to desired values faster than the comparative example. In the above example, the desired value of the flow rate corresponds to the upper limit R2 of the rotational speed R, and the desired value of the liquid temperature CT is the temperature C2.

<2-7. Step-by-step explanation of controls related to the present disclosure>
The control according to the present disclosure regarding the rotational acceleration α and temperature increase rate β of the pump will be explained as follows with reference to examples.

[Explanation J1] When increasing the temperature of liquid Q (corresponding to liquid temperature CT),
Accelerate the pump 12 at the first acceleration (corresponding to the upper limit α1) until the speed of the pump 12 (corresponding to the rotational speed R) reaches a first predetermined speed (corresponding to the lower limit R1) (the time point at which it reaches corresponds to time t1) After letting;
Until the speed of the pump 12 reaches a second predetermined speed (corresponding to upper limit R2) higher than the first predetermined speed (the time point at which it reaches corresponds to time t4), the pump 12 is accelerated at a second acceleration (corresponding to the upper limit R2) which is lower than the first acceleration. (corresponding to the upper limit α2).

In this way, by adopting multiple stages of rotational acceleration (for example, upper limits α1, α2 (<α1)) for the rotational acceleration α, the flow rate and temperature of the liquid Q can be controlled while suppressing the occurrence of cavitation of the liquid Q. Reach the desired value early.

More specifically, the control will be explained below based on an example.

[Explanation J2]
1st step: When the temperature of the liquid Q is lower than the first predetermined temperature (corresponding to temperature C1), pump 12 is operated until the speed of pump 12 reaches the first predetermined speed (the time of reaching corresponds to time t1). Accelerate at the first acceleration,
Second step: When the speed of the pump 12 reaches the first predetermined speed when the temperature of the liquid Q is less than the first predetermined temperature, the speed of the pump 12 is maintained at the first predetermined speed;
Third step: When the temperature of the liquid Q is above the first predetermined temperature and below the second predetermined temperature (corresponding to temperature C2) which is higher than the first predetermined temperature (corresponding to temperature range S2), the pump 12 Accelerate the pump 12 at a second acceleration until the speed reaches a second predetermined speed (the time point at which it reaches corresponds to time t4),
Fourth step: When the speed of the pump 12 reaches the second predetermined speed when the temperature of the liquid Q is above the first predetermined temperature and below the second predetermined temperature, the pump 12 is maintained at the second predetermined speed. .

As mentioned above, considering t1<t2, the control can be further explained as follows.

[Explanation J3]
Before the temperature of the liquid Q reaches the first predetermined temperature (the time of reaching corresponds to time t2), the pump 12 reaches the first predetermined speed (the time of reaching corresponds to time t1);
Before the temperature of the liquid Q reaches the second predetermined temperature (the time of reaching corresponds to time t6), the pump 12 reaches the second predetermined speed (the time of reaching corresponds to time t4).

Therefore, there is no need to stop heating the liquid Q to wait for the rotational speed R of the pump 12 to increase.

Considering that the above-mentioned operation is adopted in the internal circulation, the control can also be explained as follows.

[Explanation J4]
From the first step to the fourth step, the on-off valve (corresponding to valve 13) closes,
Fifth step: After the temperature of the liquid Q reaches the second predetermined temperature (corresponding to after time t6), the on-off valve opens.

After the flow rate and liquid temperature CT of the liquid Q reach the desired values in this way, the liquid Q is introduced into the external paths 71 and 72 via the valve 13 (more specifically, via the opened valves 71c and 72c). Supplied.

<2-8. Flowchart regarding control related to this disclosure>
FIG. 13 is a flowchart illustrating control according to the present disclosure. Since this control targets the rotational acceleration α and temperature increase rate β of the pump 12, the flowchart is shown with the additional note “acceleration/temperature increase change process”. The flowchart is repeatedly executed at intervals, for example, at intervals required for controlling the rotational acceleration α and the temperature increase rate β.

In steps D1 and D2, a determination is made regarding the liquid temperature CT. In steps D3 and D4, the rotation speed R is determined. Steps SA0, SA1, and SA2 set the rotational acceleration α. Steps B0 and B1 set the temperature increase rate β.

Prior to executing steps D2, D3, D4, SA0, SA1, SA2, B0, and B1, it is determined in step D1 whether the liquid temperature CT exceeds the temperature C1. If the result of this determination is positive, it is determined that the liquid temperature CT is within the temperature range S2, and step D2 is executed. The processing after step D2 will be described later.

If the result of the determination in step D1 is negative, it is determined that the liquid temperature CT is within the temperature range S1 (corresponding to before time t2 in FIG. 12), and step D4 is executed.

In step D4, it is determined whether the rotational speed R is less than the lower limit R1. If the result of the determination in step D4 is positive, it is determined that the rotational speed R has not reached the lower limit R1 (corresponding to before time t1 in FIG. 12), and step SA1 is executed. In step SA1, the rotational acceleration α is set to the upper limit α1 (see the polygonal line Gc in FIG. 12). The execution of step SA1 is accompanied by the execution of step B1 (see the polygonal line Ga in FIG. 12). In step B1, the temperature increase rate β is set to a positive value, for example, a constant value β1. After steps SA1 and B1 are executed, the flowchart ends once and restarts after the above-mentioned time.

If both the judgment results in steps D1 and D4 are negative, the rotational speed R has reached the lower limit R1 while the liquid temperature CT is within the temperature range S1 (from time t1 to time t2 in FIG. 12). (equivalent to between). In this case, in order to maintain the rotational speed R at the lower limit R1 (see polygonal line Gc in FIG. 12), the rotational acceleration α is set to the value α0 (<α2) (step SA0). Typically, α0=0, but the value α0 may take a small positive value in order to exclude the influence of anything other than the pump 12 on the liquid Q.

The execution of step SA0 is accompanied by the execution of step B1 (see the polygonal line Ga in FIG. 12). After steps SA0 and B1 are executed, the flowchart ends once and restarts after the above-mentioned time.

In step D2, it is determined whether the liquid temperature CT is lower than the temperature C2. If the judgment in step D2 is negative, this means that the liquid temperature CT has reached the temperature C2 (corresponding to after time t6 in FIG. 12), and in this case, the temperature increase rate β is the value β0 (<β1 ) (step B0). Typically, β0=0, but the value β0 may take a small positive value in order to exclude the influence of anything other than the heater 11 on the liquid Q. After step B0 is executed, the flowchart ends once and restarts after the above-mentioned time.

If the result of the determination in step D2 is positive, step D3 is executed. In step D3, it is determined whether the rotational speed R is less than the upper limit R2. If the determination is positive (corresponding to the period from time t2 to time t4), the rotational acceleration α is set to the value α2 (<α1) (step SA2).

The execution of step SA2 is accompanied by the execution of step B1 (see the polygonal line Ga in FIG. 12). After steps SA2 and B1 are executed, the flowchart ends once and restarts after the above-mentioned time.

If the result of the determination in step D3 is negative (corresponding to the period from time t4 to time t6), the rotational acceleration α is set to the value α0 (step SA0).

The execution of step SA0 is accompanied by the execution of step B1 (see the polygonal line Ga in FIG. 12). After steps SA0 and B1 are executed, the flowchart ends once and restarts after the above-mentioned time.

Steps D1, D4, SA1 correspond to the first step of [Explanation J2], steps D1, D4, SA0 correspond to the second step of [Explanation J2], and steps D1, D2, D3, SA2 correspond to the second step of [Explanation J2]. It can be considered that steps D1, D2, D3, and SA0 correspond to the fourth step of [Explanation J2].

<3. Transformation＞
In the above embodiments, for example, the pump 12 may be of a type other than the rotary type. In this case, the rotation speed R and the rotation acceleration α described above can be read as the speed and acceleration of the pump 12, respectively, and the above explanation is valid.

All or part of each of the above embodiments and various modified examples can be combined as appropriate to the extent that they do not contradict each other.

1 Piping (1st piping)
2 Piping (second piping)
3 Piping (third piping)
5 Control part 11 Heater 12 Pump 12a Suction port 12b Discharge port 13 Valve (on-off valve)
71, 72 External path 100 Circulation device 101 Inflow end (first inflow end)
202 Outflow end (second outflow end)
301 End 302 Outflow end (third outflow end)
C1 temperature (first predetermined temperature)
C2 temperature (second predetermined temperature)
CT Liquid temperature (liquid temperature)
Q Liquid R1 Lower limit (first predetermined speed)
R2 upper limit (second predetermined speed)
T Storage tank α1 Upper limit (1st acceleration)
α2 Upper limit (second acceleration)
β1 constant value

Claims (12)

A method for controlling a circulation device that supplies and recovers liquid to an external path, the circulation device comprising:
a storage tank that stores the liquid;
a first pipe that has a first inflow end through which the liquid flows from the storage tank and is used for the supply of the liquid;
a heater provided in the first pipe and heating the liquid;
a pump that is provided in the first piping and has an inlet port that is connected to the first inflow end and a discharge port that is connected to the heater, and that pumps out the liquid; and to the storage tank. It has a second outflow end through which the liquid flows out, and includes a second pipe used for the recovery of the liquid,
The method includes:
When increasing the temperature of the liquid,
accelerating the pump at a first acceleration until the speed of the pump reaches a first predetermined speed;
accelerating the pump at a second acceleration that is lower than the first acceleration until the speed of the pump reaches a second predetermined speed that is higher than the first predetermined speed;
How to control a circulation device. A first step of accelerating the pump at the first acceleration until the speed of the pump reaches the first predetermined speed when the temperature of the liquid is less than a first predetermined temperature;
a second step of maintaining the speed of the pump at the first predetermined speed when the speed of the pump reaches the first predetermined speed when the temperature of the liquid is lower than the first predetermined temperature;
When the temperature of the liquid is above the first predetermined temperature and below a second predetermined temperature higher than the first predetermined temperature, the pump is operated until the speed of the pump reaches the second predetermined speed. a third step of accelerating at the second acceleration;
When the speed of the pump reaches the second predetermined speed when the temperature of the liquid is above the first predetermined temperature and below the second predetermined temperature, the pump is maintained at the second predetermined speed. Equipped with a fourth step,
Between the speed of the pump and the temperature of the liquid,
the pump reaches the first predetermined speed before the temperature of the liquid reaches the first predetermined temperature;
2. The method of controlling a circulation device according to claim 1, wherein the pump reaches the second predetermined speed before the temperature of the liquid reaches the second predetermined temperature. 3. The method of controlling a circulation device according to claim 2, wherein the liquid is heated at a constant heating rate until the temperature of the liquid reaches the second predetermined temperature. The circulation device includes: an on-off valve connected to the pump via the heater in the first pipe; an end connected to the first pipe between the heater and the on-off valve; and an end connected to the first pipe between the heater and the on-off valve; further comprising a third pipe having a third outflow end through which the liquid flows out;
in the first step and the second step, closing the on-off valve;
The method for controlling a circulation device according to claim 2 or 3, further comprising a fifth step of opening the on-off valve after the temperature of the liquid reaches the second predetermined temperature. The method for controlling a circulation device according to any one of claims 1 to 4, wherein the pump is a magnetic levitation centrifugal pump. The method for controlling a circulation device according to any one of claims 1 to 5, wherein the liquid is sulfuric acid or a diluted sulfuric acid. A circulation device that supplies and collects liquid to and from an external route, comprising:
a storage tank that stores the liquid;
a first pipe that has a first inflow end through which the liquid flows from the storage tank and is used for the supply of the liquid;
a heater provided in the first pipe and heating the liquid;
a pump that is provided in the first pipe and has an inlet port connected to the first inflow end and a discharge port connected to the heater, and that pumps out the liquid;
a second pipe that has a second outflow end through which the liquid flows out to the storage tank and is used for the recovery of the liquid; and a control unit,
The control unit includes:
When increasing the temperature of the liquid,
accelerating the pump at a first acceleration until the speed of the pump reaches a first predetermined speed;
A circulation device that accelerates the pump at a second acceleration that is lower than the first acceleration until the speed of the pump reaches a second predetermined speed that is higher than the first predetermined speed. The control unit includes:
Accelerating the pump at the first acceleration until the speed of the pump reaches the first predetermined speed when the temperature of the liquid is less than a first predetermined temperature;
When the speed of the pump reaches the first predetermined speed when the temperature of the liquid is less than the first predetermined temperature, maintaining the speed of the pump at the first predetermined speed;
When the temperature of the liquid is above the first predetermined temperature and below a second predetermined temperature higher than the first predetermined temperature, the pump is operated until the speed of the pump reaches the second predetermined speed. Accelerate at the second acceleration,
When the speed of the pump reaches the second predetermined speed when the temperature of the liquid is above the first predetermined temperature and below the second predetermined temperature, the speed of the pump is reduced to the second predetermined speed. maintain,
Between the speed of the pump and the temperature of the liquid,
the pump reaches the first predetermined speed before the temperature of the liquid reaches the first predetermined temperature;
The circulation device according to claim 7, wherein the pump reaches the second predetermined speed before the temperature of the liquid reaches the second predetermined temperature. The circulation device according to claim 8, wherein the control unit causes the heater to heat the liquid at a constant temperature increase rate until the temperature of the liquid reaches the second predetermined temperature. an on-off valve that is connected to the pump via the heater in the first piping and can be opened and closed at least; and an end that is connected to the first piping between the heater and the on-off valve; further comprising a third pipe having a third outflow end through which the liquid flows out;
The control unit includes:
before the temperature of the liquid reaches the second predetermined temperature, closing the on-off valve;
The circulation device according to claim 8 or 9, wherein the on-off valve is opened after the temperature of the liquid reaches the second predetermined temperature. The circulation device according to any one of claims 7 to 10, wherein the pump is a magnetic levitation centrifugal pump. The circulation device according to any one of claims 7 to 11, wherein the liquid is sulfuric acid or a diluted sulfuric acid.

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