JP2023137546A - Substrate mounting table, substrate processing device, and substrate processing method - Google Patents

Substrate mounting table, substrate processing device, and substrate processing method Download PDF

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JP2023137546A
JP2023137546A JP2022043800A JP2022043800A JP2023137546A JP 2023137546 A JP2023137546 A JP 2023137546A JP 2022043800 A JP2022043800 A JP 2022043800A JP 2022043800 A JP2022043800 A JP 2022043800A JP 2023137546 A JP2023137546 A JP 2023137546A
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substrate
holder
pin
hole
lifting pin
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潤一 深沢
Junichi Fukazawa
篤 邊見
Atsushi Hemmi
勝行 大上
Katsuyuki Ogami
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2022043800A priority Critical patent/JP2023137546A/en
Priority to CN202310202363.2A priority patent/CN116779405A/en
Priority to KR1020230029578A priority patent/KR20230136530A/en
Priority to TW112108670A priority patent/TW202401649A/en
Publication of JP2023137546A publication Critical patent/JP2023137546A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

To provide a substrate mounting table, a substrate processing device, and a substrate processing method that suppress non-uniform substrate processing at positions corresponding to lift pins.SOLUTION: A substrate mounting table having a mounting surface on which a substrate is placed includes a base material, an elevating pin that is made of a conductor, that moves up and down with respect to the mounting surface, that has a step between an upper portion and a lower portion, and in which the diameter of the upper portion is larger than the diameter of the lower portion, a pin hole that opens in the placement surface and is formed inside the base material, into which the elevating pin protrudes and sinks, and a holder including a through hole through which the elevating pin passes, and is provided on the base material and is made of a conductor. The holder includes an outer holder and an inner holder, the through hole is formed on the central axis of the inner holder such that the elevating pin can move up and down, the diameter of the through hole is smaller than the diameter of the upper portion of the elevating pin, and the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.SELECTED DRAWING: Figure 1

Description

本開示は、基板載置台、基板処理装置及び基板処理方法に関する。 The present disclosure relates to a substrate mounting table, a substrate processing apparatus, and a substrate processing method.

特許文献１には、基板にプラズマ処理を行う際に、載置台本体の昇降ピンの挿通孔に対応する位置における処理の不均一性を抑制した基板載置台が開示されている。 Patent Document 1 discloses a substrate mounting table that suppresses non-uniformity of processing at positions corresponding to insertion holes of elevating pins in a mounting table main body when performing plasma processing on a substrate.

特開２００７－２７３６８５号公報Japanese Patent Application Publication No. 2007-273685

本開示は、昇降ピンに対応する位置において基板処理が不均一になることを抑制する基板載置台、基板処理装置及び基板処理方法を提供する。 The present disclosure provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method that suppress non-uniform substrate processing at positions corresponding to lift pins.

本開示の一の態様によれば、基板を載置する載置面を有する基板載置台であって、前記載置面の下方に位置し導体で構成された基材と、導体で構成され、前記載置面に対して昇降し、上部と下部との間に段差を有し、前記上部の径が前記下部の径よりも大きい昇降ピンと、前記載置面に開口し前記基材の内部に形成された前記昇降ピンが突没するピン孔と、前記昇降ピンが貫通する貫通孔を含み、前記基材に設けられ導体で構成されたホルダと、を備え、前記ホルダは、共通の中心軸を有する外側ホルダと、内側ホルダと、を備え、前記貫通孔は、前記内側ホルダの中心軸上に前記昇降ピンが上下動可能に形成され、前記貫通孔の径は、前記昇降ピンの前記上部の径よりも小さく、前記内側ホルダは、前記外側ホルダとの間に配置された弾性部材を介して、摺動可能に前記外側ホルダに支持される基板載置台が提供される。 According to one aspect of the present disclosure, there is provided a substrate mounting table having a mounting surface on which a substrate is placed, the base material being located below the mounting surface and made of a conductor, and the base material made of a conductor, an elevating pin that moves up and down with respect to the mounting surface, has a step between the upper and lower parts, and has a diameter of the upper part larger than a diameter of the lower part; a holder including a pin hole into which the formed lifting pin protrudes and sinks, and a through hole through which the lifting pin passes, and is provided on the base material and is made of a conductor, and the holder has a common central axis. an outer holder and an inner holder, the through hole is formed on the central axis of the inner holder so that the lifting pin can move up and down, and the diameter of the through hole is larger than the upper part of the lifting pin. The inner holder is provided with a substrate mounting table which is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.

本開示は、昇降ピンに対応する位置において基板処理が不均一になることを抑制する基板載置台、基板処理装置及び基板処理方法を提供する。 The present disclosure provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method that suppress non-uniform substrate processing at positions corresponding to lift pins.

図１は、本実施形態に係る基板載置台を備える基板処理装置を示す断面図である。FIG. 1 is a sectional view showing a substrate processing apparatus including a substrate mounting table according to the present embodiment. 図２は、本実施形態に係る基板載置台の拡大断面図である。FIG. 2 is an enlarged cross-sectional view of the substrate mounting table according to this embodiment. 図３は、本実施形態に係る基板載置台の拡大断面図である。FIG. 3 is an enlarged cross-sectional view of the substrate mounting table according to this embodiment. 図４は、本実施形態に係る基板載置台が備える昇降ピンの部分側面図である。FIG. 4 is a partial side view of the elevating pins included in the substrate mounting table according to the present embodiment. 図５は、本実施形態に係る基板載置台が備えるホルダの拡大断面図である。FIG. 5 is an enlarged cross-sectional view of a holder included in the substrate mounting table according to the present embodiment. 図６は、本実施形態に係る基板載置台を備える基板処理装置を用いた基板処理方法を説明するフロー図である。FIG. 6 is a flow diagram illustrating a substrate processing method using a substrate processing apparatus including a substrate mounting table according to the present embodiment.

以下、本開示を実施するための形態について図面を参照して説明する。なお、本明細書及び図面において、実質的に同一の構成については、同一の符号を付することにより重複した説明を省く。 Hereinafter, embodiments for implementing the present disclosure will be described with reference to the drawings. Note that, in this specification and the drawings, substantially the same configurations are given the same reference numerals to omit redundant explanation.

平行、直角、直交、水平、垂直、上下、左右などの方向には、実施形態の効果を損なわない程度のずれが許容される。角部の形状は、直角に限られず、弓状に丸みを帯びてもよい。平行、直角、直交、水平、垂直には、略平行、略直角、略直交、略水平、略垂直が含まれてもよい。 In parallel, perpendicular, perpendicular, horizontal, perpendicular, up and down, left and right directions, deviations are allowed to an extent that does not impair the effects of the embodiment. The shape of the corner portion is not limited to a right angle, but may be rounded in an arcuate shape. Parallel, right angle, perpendicular, horizontal, and perpendicular may include substantially parallel, substantially perpendicular, substantially orthogonal, substantially horizontal, and substantially perpendicular.

図１は、本実施形態に係る基板載置台２０を備える基板処理装置１を示す断面図である。基板処理装置１は、例えば、プラズマエッチング装置である。基板処理装置１は、例えば、容量結合型平行平板プラズマエッチング装置である。 FIG. 1 is a sectional view showing a substrate processing apparatus 1 including a substrate mounting table 20 according to the present embodiment. The substrate processing apparatus 1 is, for example, a plasma etching apparatus. The substrate processing apparatus 1 is, for example, a capacitively coupled parallel plate plasma etching apparatus.

基板処理装置１は、例えば、フラットパネルディスプレイ（ＦＰＤ：Ｆｌａｔ Ｐａｎｅｌ Ｄｉｓｐｌａｙ）用のガラス基板Ｇに対して、エッチング処理を行う装置である。フラットパネルディスプレイとしては、例えば、液晶ディスプレイ、発光ダイオードディスプレイ、エレクトロルミネセンスディスプレイ、蛍光表示管、プラズマディスプレイ等である。 The substrate processing apparatus 1 is, for example, an apparatus that performs an etching process on a glass substrate G for a flat panel display (FPD). Examples of flat panel displays include liquid crystal displays, light emitting diode displays, electroluminescent displays, fluorescent display tubes, and plasma displays.

基板処理装置１は、処理容器１０と、基板載置台２０と、電力供給部３０と、ガス供給部４０と、排気部５０と、を備える。 The substrate processing apparatus 1 includes a processing container 10, a substrate mounting table 20, a power supply section 30, a gas supply section 40, and an exhaust section 50.

［処理容器１０］
処理容器１０は、いわゆる、処理チャンバである。処理容器１０は、例えば、表面がアルマイト処理（陽極酸化処理）されたアルミニウム又はアルミニウム合金により形成される。処理容器１０は、角筒状の形状を有する。 [Processing container 10]
The processing container 10 is a so-called processing chamber. The processing container 10 is formed of, for example, aluminum or an aluminum alloy whose surface has been subjected to alumite treatment (anodization treatment). The processing container 10 has a rectangular cylindrical shape.

処理容器１０は、上部に、シャワーヘッド１１を備える。シャワーヘッド１１は、基板載置台２０と平行に対向して上部電極として機能する。また、シャワーヘッド１１は、処理容器１０の処理空間１０Ｓにガスを供給する。 The processing container 10 includes a shower head 11 at the top. The shower head 11 faces the substrate mounting table 20 in parallel and functions as an upper electrode. Further, the shower head 11 supplies gas to the processing space 10S of the processing container 10.

シャワーヘッド１１は、基板載置台２０の上方に設けられる。シャワーヘッド１１は、処理容器１０の上部に支持される。シャワーヘッド１１は、接地される。シャワーヘッド１１は、基板載置台２０とともに一対の平行平板電極を構成する。 The shower head 11 is provided above the substrate mounting table 20. The shower head 11 is supported on the upper part of the processing container 10. The shower head 11 is grounded. The shower head 11 and the substrate mounting table 20 constitute a pair of parallel plate electrodes.

シャワーヘッド１１は、内部に内部空間１１ａを有する。また、シャワーヘッド１１は、基板載置台２０との対向面に処理ガスを吐出する複数の吐出孔１１ｂを有する。 The shower head 11 has an internal space 11a inside. Further, the shower head 11 has a plurality of discharge holes 11b for discharging processing gas onto a surface facing the substrate mounting table 20.

シャワーヘッド１１の上面にはガス導入口１１ｃが設けられる。ガス導入口１１ｃには、処理ガス供給管４０ｐが接続される。処理ガス供給管４０ｐには、ガス供給部４０が接続される。 A gas inlet 11c is provided on the upper surface of the shower head 11. A processing gas supply pipe 40p is connected to the gas inlet 11c. A gas supply section 40 is connected to the processing gas supply pipe 40p.

処理容器１０は、底壁１０ａに、基板載置台２０を載置するためにスペーサ部材１２を備える。スペーサ部材１２は、絶縁体により形成される。スペーサ部材１２は、基板載置台２０の外形に対応するように設けられる。スペーサ部材１２の上に、基板載置台２０が載置される。基板載置台２０は、本体部２１と絶縁部材２２により構成される。 The processing container 10 includes a spacer member 12 on the bottom wall 10a for mounting the substrate mounting table 20 thereon. Spacer member 12 is formed of an insulator. The spacer member 12 is provided to correspond to the outer shape of the substrate mounting table 20. A substrate mounting table 20 is placed on the spacer member 12 . The substrate mounting table 20 is composed of a main body part 21 and an insulating member 22.

スペーサ部材１２と底壁１０ａとの間、スペーサ部材１２と本体部２１及び絶縁部材２２との間は気密にシールされる。したがって、基板載置台２０が備える本体部２１と底壁１０ａとの間に大気雰囲気の空間１０Ａが形成される。そして、空間１０Ａにより大気絶縁される。 The spaces between the spacer member 12 and the bottom wall 10a and between the spacer member 12 and the main body portion 21 and the insulating member 22 are airtightly sealed. Therefore, an atmospheric space 10A is formed between the main body 21 of the substrate mounting table 20 and the bottom wall 10a. Then, it is insulated from the atmosphere by the space 10A.

処理容器１０は、複数の絶縁部材１３を備える。絶縁部材１３は、処理容器１０の底壁１０ａに埋設される。絶縁部材１３の中心に鉛直に設けられた貫通孔に、ボルト１４が挿入される。ボルト１４により、基板載置台２０の本体部２１が底壁１０ａに固定される。本体部２１が、複数のボルト１４を用いて底壁１０ａに固定されることにより、処理容器１０内が真空に保持されても、真空雰囲気の処理空間１０Ｓと大気雰囲気の空間１０Ａとの差圧により基板載置台２０が撓むことを防止できる。 The processing container 10 includes a plurality of insulating members 13. The insulating member 13 is embedded in the bottom wall 10a of the processing container 10. A bolt 14 is inserted into a through hole provided vertically at the center of the insulating member 13. The main body portion 21 of the substrate mounting table 20 is fixed to the bottom wall 10a by the bolts 14. By fixing the main body part 21 to the bottom wall 10a using a plurality of bolts 14, even if the inside of the processing container 10 is maintained in a vacuum, the differential pressure between the processing space 10S in a vacuum atmosphere and the space 10A in an atmospheric atmosphere is maintained. This can prevent the substrate mounting table 20 from being bent.

処理容器１０は、底壁１０ａに接続される排気管１５を備える。排気管１５は、排気部５０に接続される。排気部５０は、処理容器１０の処理空間１０Ｓ内を排気する。排気部５０が、処理容器１０の処理空間１０Ｓ内を所定の減圧雰囲気まで真空引きする。 The processing container 10 includes an exhaust pipe 15 connected to the bottom wall 10a. Exhaust pipe 15 is connected to exhaust section 50 . The exhaust section 50 exhausts the inside of the processing space 10S of the processing container 10. The exhaust section 50 evacuates the inside of the processing space 10S of the processing container 10 to a predetermined reduced pressure atmosphere.

処理容器１０は、側壁に、基板搬入出口１６と、基板搬入出口１６を開閉するゲートバルブ１７と、を備える。基板処理装置１は、ゲートバルブ１７を開にした状態で、隣接するロードロック室（図示せず）との間で、ガラス基板Ｇが搬送される。 The processing container 10 includes a substrate loading/unloading port 16 and a gate valve 17 for opening/closing the substrate loading/unloading port 16 on a side wall. In the substrate processing apparatus 1, the glass substrate G is transported between an adjacent load lock chamber (not shown) with the gate valve 17 opened.

［基板載置台２０］
基板処理装置１は、処理容器１０の底部に、被処理基板であるガラス基板Ｇを載置する基板載置台２０を備える。基板載置台２０は、載置面２０Ｓの上にガラス基板Ｇを載置する。すなわち、基板載置台２０は、載置面２０Ｓを有する。基板載置台２０は、処理容器１０の内部に配置される。 [Substrate mounting table 20]
The substrate processing apparatus 1 includes a substrate mounting table 20 on the bottom of the processing container 10 on which a glass substrate G, which is a substrate to be processed, is placed. The substrate mounting table 20 places the glass substrate G on the mounting surface 20S. That is, the substrate mounting table 20 has a mounting surface 20S. The substrate mounting table 20 is arranged inside the processing container 10 .

基板載置台２０は、本体部２１と、絶縁部材２２と、複数の基板昇降部２３と、を備える。図２及び図３は、本実施形態に係る基板載置台２０の拡大断面図である。具体的には、図２及び図３は、基板載置台２０における基板昇降部２３の部分を拡大した断面図である。なお、図２は、基板載置台２０にガラス基板Ｇを載置し、昇降ピン２３ａを基板載置台２０の内部に退避している状態を示す。図２の状態を退避状態という。図３は、基板載置台２０からガラス基板Ｇを昇降ピン２３ａにより持ち上げている状態を示す。図３の状態を支持状態という。 The substrate mounting table 20 includes a main body 21 , an insulating member 22 , and a plurality of substrate lifting sections 23 . 2 and 3 are enlarged cross-sectional views of the substrate mounting table 20 according to this embodiment. Specifically, FIGS. 2 and 3 are enlarged cross-sectional views of the substrate lifting section 23 of the substrate mounting table 20. As shown in FIG. Note that FIG. 2 shows a state in which the glass substrate G is placed on the substrate mounting table 20 and the elevating pins 23a are retracted inside the substrate mounting table 20. The state shown in FIG. 2 is called a retreat state. FIG. 3 shows a state in which the glass substrate G is lifted from the substrate mounting table 20 by the lifting pins 23a. The state shown in FIG. 3 is called a supporting state.

（本体部２１）
本体部２１は、電力供給部３０から高周波電力が供給されることにより、下部電極として作用する。 (Main body part 21)
The main body part 21 acts as a lower electrode by being supplied with high frequency power from the power supply part 30.

本体部２１は、基材２１ａと、誘電体層２１ｂと、複数の凸部２１ｃと、土手部２１ｄと、を備える。土手部２１ｄは本体部２１の上面の周縁部に、誘電体層２１ｂから上部に突出して枠状に形成される。本体部２１は、基板昇降部２３が備える昇降ピン２３ａが突没するピン孔２１ｈを備える。ピン孔２１ｈは、基材２１ａ及び誘電体層２１ｂを貫通して設けられる。ピン孔２１ｈは、載置面２０Ｓに開口する。載置面２０Ｓには、また、ヘリウム等の冷却用のガス（バッククーリングガス）を供給するための図示しない複数の冷却ガス孔が開口し設けられている。ヘリウム等の冷却用のガスは、載置面２０Ｓとガラス基板Ｇの下側の面（裏面）との間に供給され、ガラス基板Ｇと熱交換を行ってガラス基板Ｇの温度を調節する。 The main body portion 21 includes a base material 21a, a dielectric layer 21b, a plurality of convex portions 21c, and a bank portion 21d. The bank portion 21d is formed in a frame shape at the peripheral edge of the upper surface of the main body portion 21, protruding upward from the dielectric layer 21b. The main body portion 21 includes a pin hole 21h into which a lifting pin 23a included in the board lifting portion 23 projects and sinks. The pin hole 21h is provided to penetrate the base material 21a and the dielectric layer 21b. The pin hole 21h opens to the mounting surface 20S. The mounting surface 20S is also provided with a plurality of cooling gas holes (not shown) for supplying cooling gas (back cooling gas) such as helium. A cooling gas such as helium is supplied between the mounting surface 20S and the lower surface (back surface) of the glass substrate G, and adjusts the temperature of the glass substrate G by exchanging heat with the glass substrate G.

基材２１ａは、導電性の部材、すなわち、導体、で構成される。基材２１ａは、例えば、金属により形成される。具体的には、基材２１ａは、例えば、アルミニウム、アルミニウム合金、ステンレス合金又はアルミニウム合金とステンレス合金の組み合わせにより形成される。基材２１ａは、載置面２０Ｓの下方に位置する。基材２１ａには、基板昇降部２３が取り付けられる。 The base material 21a is made of an electrically conductive member, that is, a conductor. The base material 21a is made of metal, for example. Specifically, the base material 21a is formed of, for example, aluminum, an aluminum alloy, a stainless steel alloy, or a combination of an aluminum alloy and a stainless steel alloy. The base material 21a is located below the mounting surface 20S. A substrate lifting section 23 is attached to the base material 21a.

本体部２１は、基材２１ａの上部に、誘電体層２１ｂを備える。誘電体層２１ｂは、例えば、セラミックス等の誘電体により形成される。誘電体層２１ｂは、内部に静電吸着用の電極２１ｂ１が埋設される。電極２１ｂ１は、静電吸着電極である。電極２１ｂ１には、図示しない外部の電源より電圧が印加される。電極２１ｂ１に電圧が印加されることにより、クーロン力により、ガラス基板Ｇを吸着する。電極２１ｂ１は、例えば、タングステン等により形成される。 The main body portion 21 includes a dielectric layer 21b on top of a base material 21a. The dielectric layer 21b is formed of a dielectric material such as ceramics, for example. An electrode 21b1 for electrostatic adsorption is embedded inside the dielectric layer 21b. The electrode 21b1 is an electrostatic adsorption electrode. A voltage is applied to the electrode 21b1 from an external power source (not shown). By applying a voltage to the electrode 21b1, the glass substrate G is attracted by Coulomb force. The electrode 21b1 is made of, for example, tungsten.

なお、基材２１ａは、内部に図示しない流路を備える。基材２１ａの流路に予め定められた温度に設定された熱媒体が流れることにより、基材２１ａは予め定められた所望の温度に、温度を調整される。 Note that the base material 21a includes a flow path (not shown) inside. The temperature of the base material 21a is adjusted to a predetermined desired temperature by flowing a heat medium set to a predetermined temperature through the flow path of the base material 21a.

本体部２１は、誘電体層２１ｂの上部に、複数の凸部２１ｃ及び土手部２１ｄを備える。凸部２１ｃ及び土手部２１ｄは、例えば、誘電体材料により形成される。凸部２１ｃは、誘電体層２１ｂの上部に突起状に形成され、土手部２１ｄは、誘電体層２１ｂの上部の周縁部に設けられる。土手部２１ｄの上面と、凸部２１ｃの上面とは、土手部２１ｄの上面が凸部２１ｃの上面よりも高いか、若しくは同じ高さになっている。ガラス基板Ｇを基板載置台２０に載置する場合には、ガラス基板Ｇは、土手部２１ｄの上面、若しくは土手部２１ｄの上面及び凸部２１ｃの上面に接触した状態になる。なお、本体部２１は、必ずしも複数の凸部２１ｃを備えていなくてもよく、土手部２１ｄの内側の領域は平坦であってもよい。また、土手部２１ｄの内側の領域を平坦な面とする場合、粗面化してもよい。 The main body part 21 includes a plurality of convex parts 21c and a bank part 21d on the upper part of the dielectric layer 21b. The convex portion 21c and the bank portion 21d are formed of, for example, a dielectric material. The convex portion 21c is formed in a protrusion shape on the upper part of the dielectric layer 21b, and the bank portion 21d is provided on the upper peripheral edge of the dielectric layer 21b. The upper surface of the bank portion 21d and the upper surface of the convex portion 21c are such that the upper surface of the bank portion 21d is higher than or the same height as the upper surface of the convex portion 21c. When placing the glass substrate G on the substrate mounting table 20, the glass substrate G is in contact with the top surface of the bank portion 21d, or the top surface of the bank portion 21d and the top surface of the convex portion 21c. Note that the main body portion 21 does not necessarily have to include the plurality of convex portions 21c, and the area inside the bank portion 21d may be flat. Further, when the inner region of the bank portion 21d is a flat surface, the surface may be roughened.

（絶縁部材２２）
基板載置台２０は、基材２１ａの周縁を囲むように設けられる絶縁部材２２を備える。絶縁部材２２の上面は、本体部２１の土手部２１ｄの上面よりわずかに低く、ガラス基板Ｇとは接触せずに間隙（例えば、０．１ミリメートルから０．３ミリメートルｍｍ程度）を形成する。絶縁部材２２は、上部部材と下部部材等、複数の部材に分割されてもよい。 (Insulating member 22)
The substrate mounting table 20 includes an insulating member 22 provided so as to surround the periphery of the base material 21a. The upper surface of the insulating member 22 is slightly lower than the upper surface of the bank portion 21d of the main body portion 21, and does not contact the glass substrate G, forming a gap (for example, about 0.1 mm to 0.3 mm). The insulating member 22 may be divided into a plurality of members, such as an upper member and a lower member.

（基板昇降部２３）
基板昇降部２３は、ガラス基板Ｇを基板載置台２０にローディング及びアンローディングのそれぞれを行うときに、ガラス基板Ｇを基板載置台２０から離間した上方において支持する。基板載置台２０から離間した上方において支持されたガラス基板Ｇは、搬送装置により搬入及び搬出される。 (Substrate lifting section 23)
The substrate lifting unit 23 supports the glass substrate G at a position above and spaced from the substrate mounting table 20 when loading and unloading the glass substrate G onto the substrate mounting table 20, respectively. The glass substrate G supported above and away from the substrate mounting table 20 is carried in and carried out by a transport device.

基板昇降部２３は、底壁１０ａの外側から処理容器１０の内部に挿入される。基板昇降部２３は、昇降ピン２３ａと、ホルダ２３ｂと、付勢部材２３ｃと、Ｏリング２３ｄと、接続部２３ｅと、昇降部２３ｆと、を備える。 The substrate lifting section 23 is inserted into the processing container 10 from outside the bottom wall 10a. The board elevating section 23 includes an elevating pin 23a, a holder 23b, a biasing member 23c, an O-ring 23d, a connecting section 23e, and an elevating section 23f.

（昇降ピン２３ａ）
昇降ピン２３ａは、ガラス基板Ｇを支持する。また、昇降ピン２３ａは、ガラス基板Ｇを昇降する。昇降ピン２３ａは、本体部２１に形成されたピン孔２１ｈを突没する。昇降ピン２３ａは、導電性の部材で形成される。 (Elevating pin 23a)
The lifting pins 23a support the glass substrate G. Further, the elevating pin 23a moves the glass substrate G up and down. The elevating pin 23a projects and retracts into a pin hole 21h formed in the main body portion 21. The lifting pin 23a is formed of a conductive member.

図４は、本実施形態に係る基板載置台２０が備える昇降ピン２３ａの部分側面図である。昇降ピン２３ａは、上部２３ａ１と、傾斜部２３ａ２と、下部２３ａ３と、を有する。昇降ピン２３ａは、中心軸ＡＸに対して回転対称の形状を有する。 FIG. 4 is a partial side view of the elevating pin 23a included in the substrate mounting table 20 according to the present embodiment. The elevating pin 23a has an upper portion 23a1, an inclined portion 23a2, and a lower portion 23a3. The elevating pin 23a has a rotationally symmetrical shape with respect to the central axis AX.

昇降ピン２３ａにおける上部２３ａ１は、中心軸ＡＸを有し、直径Ｄ２の円柱状の形状を有する。上部２３ａ１の直径Ｄ２は、ピン孔２１ｈの直径Ｄ１に対して、小さくなっている。したがって、昇降ピン２３ａが上下方向に移動しても、昇降ピン２３ａは、ピン孔２１ｈの内面に接触しない。したがって、昇降ピン２３ａがピン孔２１ｈの内面に接触することによりパーティクル等が発生することを防止できる。 The upper part 23a1 of the lifting pin 23a has a central axis AX and has a cylindrical shape with a diameter D2. The diameter D2 of the upper portion 23a1 is smaller than the diameter D1 of the pin hole 21h. Therefore, even if the lifting pin 23a moves in the vertical direction, the lifting pin 23a does not come into contact with the inner surface of the pin hole 21h. Therefore, it is possible to prevent particles from being generated due to the lifting pin 23a coming into contact with the inner surface of the pin hole 21h.

昇降ピン２３ａは、昇降ピン２３ａが上昇したときに、ガラス基板Ｇを上部２３ａ１の上面２３ａＡにより支持する。いいかえると、上部２３ａ１の上面２３ａＡは、ガラス基板Ｇを支持する支持面となる。昇降ピン２３ａは、上部２３ａ１における上面２３ａＡにおいてガラス基板Ｇと接触可能になっている。 The lifting pin 23a supports the glass substrate G by the upper surface 23aA of the upper portion 23a1 when the lifting pin 23a is raised. In other words, the upper surface 23aA of the upper portion 23a1 becomes a support surface that supports the glass substrate G. The lifting pin 23a can come into contact with the glass substrate G at the upper surface 23aA of the upper portion 23a1.

昇降ピン２３ａの側面２３ａＢは、Ｏリング２３ｄと接触するシール面となる。上部２３ａ１は、昇降ピン２３ａが退避状態（図２参照）にあるときに、側面２３ａＢとＯリング２３ｄとが接触する。昇降ピン２３ａの側面２３ａＢとＯリング２３ｄとが接触することにより、昇降ピン２３ａとＯリング２３ｄとの間で気密が保たれる。いいかえると、昇降ピン２３ａの側面２３ａＢとＯリング２３ｄとが接触することにより、昇降ピン２３ａとホルダ２３ｂとの間で気密を確保できる。 A side surface 23aB of the lifting pin 23a becomes a sealing surface that comes into contact with the O-ring 23d. In the upper part 23a1, when the elevating pin 23a is in the retracted state (see FIG. 2), the side surface 23aB and the O-ring 23d are in contact with each other. By contacting the side surface 23aB of the lifting pin 23a and the O-ring 23d, airtightness is maintained between the lifting pin 23a and the O-ring 23d. In other words, by contacting the side surface 23aB of the lifting pin 23a and the O-ring 23d, airtightness can be ensured between the lifting pin 23a and the holder 23b.

例えば、ガラス基板Ｇの下側の面（裏面）と載置面２０Ｓとの間には、ヘリウム等の冷却用のガス（バッククーリングガス）が流通する場合がある。昇降ピン２３ａとホルダ２３ｂとの間で気密を確保することにより、冷却用のガスの、ピン孔２１ｈの下方へのリークを抑制できる。冷却用のガスのリークを抑制することにより、温度の安定性を向上できる。 For example, a cooling gas (back cooling gas) such as helium may flow between the lower surface (back surface) of the glass substrate G and the mounting surface 20S. By ensuring airtightness between the elevating pin 23a and the holder 23b, it is possible to suppress the cooling gas from leaking downward through the pin hole 21h. By suppressing leakage of cooling gas, temperature stability can be improved.

昇降ピン２３ａにおける傾斜部２３ａ２は、外径の異なる上部２３ａ１と下部２３ａ３との間を接続する。傾斜部２３ａ２は、上部２３ａ１と下部２３ａ３との間の段差を接続する。傾斜部２３ａ２は、中心軸ＡＸに対して対象の形状を有する。傾斜部２３ａ２は、上側の面が大きく、下側の面が小さい円錐台状の形状を有する。 The inclined portion 23a2 of the lifting pin 23a connects an upper portion 23a1 and a lower portion 23a3 having different outer diameters. The inclined portion 23a2 connects the step between the upper portion 23a1 and the lower portion 23a3. The inclined portion 23a2 has a symmetrical shape with respect to the central axis AX. The inclined portion 23a2 has a truncated conical shape with a large upper surface and a smaller lower surface.

傾斜部２３ａ２は、側面２３ａＣを有する。昇降ピン２３ａが退避状態（図２参照）にあるときに、側面２３ａＣは、ホルダ２３ｂが備える内側ホルダ２３ｎの傾斜面２３ｎＡ（図５参照）と接触する。側面２３ａＣと傾斜面２３ｎＡとが接触することにより、昇降ピン２３ａは、ホルダ２３ｂと導通する。昇降ピン２３ａがホルダ２３ｂと導通することにより、基材２１ａと昇降ピン２３ａとは導通状態となり、同電位となる。基材２１ａと昇降ピン２３ａとが同電位になることにより、基板載置台２０の載置面２０Ｓにおける電位分布を均一にできる。 The inclined portion 23a2 has a side surface 23aC. When the elevating pin 23a is in the retracted state (see FIG. 2), the side surface 23aC contacts the inclined surface 23nA (see FIG. 5) of the inner holder 23n of the holder 23b. By contacting the side surface 23aC and the inclined surface 23nA, the elevating pin 23a is electrically connected to the holder 23b. When the lifting pin 23a is electrically connected to the holder 23b, the base material 21a and the lifting pin 23a are electrically connected and have the same potential. By having the base material 21a and the lifting pins 23a at the same potential, the potential distribution on the mounting surface 20S of the substrate mounting table 20 can be made uniform.

また、昇降ピン２３ａが支持状態（図３参照）にあるときに、側面２３ａＣは、ホルダ２３ｂが備える内側ホルダ２３ｎの傾斜面２３ｎＡから離隔する。側面２３ａＣと傾斜面２３ｎＡとが離隔することにより、昇降ピン２３ａは、ホルダ２３ｂから電気的に切り離される。昇降ピン２３ａがホルダ２３ｂから電気的に切り離されることにより、基材２１ａと昇降ピン２３ａとは絶縁状態となる。基材２１ａと昇降ピン２３ａとが絶縁状態になることにより、例えば、帯電したガラス基板Ｇを除電プラズマにより除電しながら基板載置台２０から離脱させる際に、異常放電を防止できる。 Further, when the lifting pin 23a is in the supported state (see FIG. 3), the side surface 23aC is separated from the inclined surface 23nA of the inner holder 23n included in the holder 23b. By separating the side surface 23aC and the inclined surface 23nA, the lifting pin 23a is electrically separated from the holder 23b. By electrically separating the elevating pin 23a from the holder 23b, the base material 21a and the elevating pin 23a are in an insulated state. By insulating the base material 21a and the lifting pins 23a, abnormal discharge can be prevented, for example, when the charged glass substrate G is removed from the substrate mounting table 20 while being neutralized by the static eliminating plasma.

昇降ピン２３ａにおける下部２３ａ３は、中心軸ＡＸを有し、直径Ｄ３の円柱状の形状を有する。下部２３ａ３の直径Ｄ３は、Ｏリング２３ｄの内径に対して、小さくなっている。したがって、昇降ピン２３ａが支持状態（図３参照）にあるときに、下部２３ａ３の側面２３ａＤはＯリング２３ｄの内面に接触しない。したがって、昇降ピン２３ａが移動した際に、Ｏリング２３ｄと接触することによりパーティクル等が発生することを抑制できる。 The lower portion 23a3 of the lifting pin 23a has a central axis AX and has a cylindrical shape with a diameter D3. The diameter D3 of the lower portion 23a3 is smaller than the inner diameter of the O-ring 23d. Therefore, when the lifting pin 23a is in the supported state (see FIG. 3), the side surface 23aD of the lower portion 23a3 does not contact the inner surface of the O-ring 23d. Therefore, when the lifting pin 23a moves, it is possible to suppress generation of particles and the like due to contact with the O-ring 23d.

（ホルダ２３ｂ）
ホルダ２３ｂは、昇降ピン２３ａを昇降可能に保持する。ホルダ２３ｂは、外側ホルダ２３ｍと、内側ホルダ２３ｎと、を備える。 (Holder 23b)
The holder 23b holds the lifting pin 23a so that it can move up and down. The holder 23b includes an outer holder 23m and an inner holder 23n.

図５は、本実施形態に係る基板載置台２０が備えるホルダ２３ｂの拡大断面図である。外側ホルダ２３ｍと内側ホルダ２３ｎとは、共通の中心軸ＢＸを有する。外側ホルダ２３ｍ及び内側ホルダ２３ｎは、中心軸ＢＸに対して回転対称の形状を有する。 FIG. 5 is an enlarged cross-sectional view of the holder 23b included in the substrate mounting table 20 according to the present embodiment. The outer holder 23m and the inner holder 23n have a common central axis BX. The outer holder 23m and the inner holder 23n have shapes that are rotationally symmetrical with respect to the central axis BX.

外側ホルダ２３ｍは、基材２１ａにおける下面に設けられる凹部２１ａｈにはめ込まれる。外側ホルダ２３ｍは、導電性部材により形成される。外側ホルダ２３ｍは、例えば、アルミニウム又はアルミニウム合金により形成される。外側ホルダ２３ｍは、基材２１ａと導通する。外側ホルダ２３ｍの上面２３ｍＡと側面２３ｍＢは、凹部２１ａｈの内面と接触する。外側ホルダ２３ｍの上面２３ｍＡと側面２３ｍＢが凹部２１ａｈの内面と接触することにより、外側ホルダ２３ｍと基材２１ａとは、導通状態となる。 The outer holder 23m is fitted into a recess 21ah provided on the lower surface of the base material 21a. The outer holder 23m is formed of a conductive member. The outer holder 23m is made of aluminum or aluminum alloy, for example. The outer holder 23m is electrically connected to the base material 21a. The upper surface 23mA and side surface 23mB of the outer holder 23m contact the inner surface of the recess 21ah. When the upper surface 23mA and the side surface 23mB of the outer holder 23m come into contact with the inner surface of the recess 21ah, the outer holder 23m and the base material 21a are brought into electrical conduction.

外側ホルダ２３ｍは、上部２３ｍａと、円筒部２３ｍｂと、下部２３ｍｃと、を有する。外側ホルダ２３ｍは、内部が空洞になっている。外側ホルダ２３ｍは、内部に、内側ホルダ２３ｎと付勢部材２３ｃとを保持する。 The outer holder 23m has an upper portion 23ma, a cylindrical portion 23mb, and a lower portion 23mc. The outer holder 23m is hollow inside. The outer holder 23m internally holds an inner holder 23n and a biasing member 23c.

上部２３ｍａは、開口２３ｍｈを有する円板状の形状を有する。開口２３ｍｈの直径は、ピン孔２１ｈの直径Ｄ１と等しい。なお、開口２３ｍｈの直径は、直径Ｄ１より大きくしてもよい。上部２３ｍａは、Ｏリング２３ｄを保持するリング溝２３ｍｇを有する。リング溝２３ｍｇには、Ｏリング２３ｄが設けられる。 The upper portion 23ma has a disc-like shape with an opening 23mh. The diameter of the opening 23mh is equal to the diameter D1 of the pin hole 21h. Note that the diameter of the opening 23mh may be larger than the diameter D1. The upper portion 23ma has a ring groove 23mg for holding an O-ring 23d. An O-ring 23d is provided in the ring groove 23mg.

円筒部２３ｍｂは、円筒状の形状を有する。円筒部２３ｍｂの内面２３ｍＣは、内側ホルダ２３ｎの外面２３ｎＢと接触する。内面２３ｍＣと外面２３ｎＢとが接触することにより、外側ホルダ２３ｍと内側ホルダ２３ｎとの間が導通する。内側ホルダ２３ｎは、外側ホルダ２３ｍに対して移動する。そこで、内面２３ｍＣと外面２３ｎＢとが摺動しやすいように、内面２３ｍＣには、フッ素系樹脂を含有する金属膜が形成されている。例えば、金属膜としては、ニッケル又は白金が用いられる。 The cylindrical portion 23mb has a cylindrical shape. The inner surface 23mC of the cylindrical portion 23mb contacts the outer surface 23nB of the inner holder 23n. The contact between the inner surface 23mC and the outer surface 23nB establishes conduction between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluororesin is formed on the inner surface 23mC so that the inner surface 23mC and the outer surface 23nB can easily slide. For example, nickel or platinum is used as the metal film.

下部２３ｍｃは、開口２３ｍｉを有する円板状の形状を有する。下部２３ｍｃにおける開口２３ｍｉの直径は、内側ホルダ２３ｎの円筒部２３ｎｂの外径と等しい。下部２３ｍｃの内面２３ｍＤは、内側ホルダ２３ｎの外面２３ｎＣと接触する。内面２３ｍＤと外面２３ｎＣとが接触することにより、外側ホルダ２３ｍと内側ホルダ２３ｎとの間が導通する。内側ホルダ２３ｎは、外側ホルダ２３ｍに対して移動する。そこで、内面２３ｍＤと外面２３ｎＣとが摺動しやすいように、内面２３ｍＤには、フッ素系樹脂を含有する金属膜が形成されている。例えば、金属膜としては、ニッケル又は白金が用いられる。 The lower portion 23mc has a disc-like shape with an opening 23mi. The diameter of the opening 23mi in the lower portion 23mc is equal to the outer diameter of the cylindrical portion 23nb of the inner holder 23n. The inner surface 23mD of the lower portion 23mc contacts the outer surface 23nC of the inner holder 23n. The contact between the inner surface 23mD and the outer surface 23nC establishes conduction between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluororesin is formed on the inner surface 23mD so that the inner surface 23mD and the outer surface 23nC can easily slide. For example, nickel or platinum is used as the metal film.

内側ホルダ２３ｎは、外側ホルダ２３ｍの内側に設けられる。内側ホルダ２３ｎは、外側ホルダ２３ｍに摺動可能に支持される。内側ホルダ２３ｎは、外側ホルダ２３ｍに対して、上下方向に移動可能に、すなわち、上下動可能に、設けられる。内側ホルダ２３ｎは、導電性部材により形成される。内側ホルダ２３ｎは、例えば、アルミニウム又はアルミニウム合金により形成される。 The inner holder 23n is provided inside the outer holder 23m. The inner holder 23n is slidably supported by the outer holder 23m. The inner holder 23n is provided so as to be movable in the vertical direction, that is, to be movable up and down with respect to the outer holder 23m. The inner holder 23n is formed of a conductive member. The inner holder 23n is made of, for example, aluminum or an aluminum alloy.

内側ホルダ２３ｎは、上下方向に貫通する貫通孔２３ｎｈを有する。貫通孔２３ｎｈは、内側ホルダ２３ｎの中心軸上、いいかえると、中心軸ＢＸ上に形成される。貫通孔２３ｎｈは、昇降ピン２３ａが上下動可能になるように、昇降ピン２３ａの下部２３ａ３の直径Ｄ３より、内径が大きく形成されている。また、貫通孔２３ｎｈは、昇降ピン２３ａの上部２３ａ１の直径Ｄ２より、内径が小さく形成されている。内側ホルダ２３ｎは、上部２３ｎａと、円筒部２３ｎｂと、を備える。 The inner holder 23n has a through hole 23nh that penetrates in the vertical direction. The through hole 23nh is formed on the central axis of the inner holder 23n, in other words, on the central axis BX. The through hole 23nh is formed to have an inner diameter larger than the diameter D3 of the lower part 23a3 of the lifting pin 23a so that the lifting pin 23a can move up and down. Further, the through hole 23nh is formed to have an inner diameter smaller than the diameter D2 of the upper portion 23a1 of the lifting pin 23a. The inner holder 23n includes an upper portion 23na and a cylindrical portion 23nb.

上部２３ｎａは、貫通孔２３ｎｈの上側の上端に傾斜面２３ｎＡを有する。昇降ピン２３ａが退避状態（図２参照）にあるときに、傾斜面２３ｎＡは、昇降ピン２３ａが有する側面２３ａＣと接触する。傾斜面２３ｎＡと側面２３ａＣとが接触することにより、昇降ピン２３ａは、ホルダ２３ｂと導通する。昇降ピン２３ａがホルダ２３ｂと導通することにより、基材２１ａと昇降ピン２３ａとは導通状態となり、同電位となる。基材２１ａと昇降ピン２３ａとが同電位になることにより、基板載置台２０における電位分布を均一にできる。 The upper portion 23na has an inclined surface 23nA at the upper end above the through hole 23nh. When the elevating pin 23a is in the retracted state (see FIG. 2), the inclined surface 23nA contacts the side surface 23aC of the elevating pin 23a. By contacting the inclined surface 23nA and the side surface 23aC, the elevating pin 23a is electrically connected to the holder 23b. When the lifting pin 23a is electrically connected to the holder 23b, the base material 21a and the lifting pin 23a are electrically connected and have the same potential. By having the base material 21a and the lifting pins 23a at the same potential, the potential distribution on the substrate mounting table 20 can be made uniform.

上部２３ｎａの外径は、外側ホルダ２３ｍにおける円筒部２３ｍｂの内面２３ｍＣの径と等しい。したがって、上部２３ｎａの側面である外面２３ｎＢは、円筒部２３ｍｂの内面２３ｍＣと接触する。外面２３ｎＢと内面２３ｍＣとが接触することにより、外側ホルダ２３ｍと内側ホルダ２３ｎとの間が導通する。内側ホルダ２３ｎは、外側ホルダ２３ｍに対して移動する。そこで、内面２３ｍＣと外面２３ｎＢとが摺動しやすいように、外面２３ｎＢには、フッ素系樹脂を含有する金属膜が形成されている。例えば、金属膜としては、ニッケル又は白金が用いられる。 The outer diameter of the upper portion 23na is equal to the diameter of the inner surface 23mC of the cylindrical portion 23mb in the outer holder 23m. Therefore, the outer surface 23nB, which is the side surface of the upper portion 23na, contacts the inner surface 23mC of the cylindrical portion 23mb. The contact between the outer surface 23nB and the inner surface 23mC establishes conduction between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluororesin is formed on the outer surface 23nB so that the inner surface 23mC and the outer surface 23nB can easily slide. For example, nickel or platinum is used as the metal film.

また、上部２３ｎａと外側ホルダ２３ｍの下部２３ｍｃとの間に、付勢部材２３ｃが設けられる。内側ホルダ２３ｎは、付勢部材２３ｃにより上側に付勢される。退避状態（図２参照）において、昇降ピン２３ａが下降すると、昇降ピン２３ａと内側ホルダ２３ｎとは接触する。付勢部材２３ｃにより、内側ホルダ２３ｎを上向きに付勢することにより、昇降ピン２３ａと内側ホルダ２３ｎとを所定の押し付け力を保ちながら接触できる。昇降ピン２３ａと内側ホルダ２３ｎとを所定の押し付け力を保ちながら接触することにより、昇降ピン２３ａと内側ホルダ２３ｎとの間の導通を十分確保できる。 Further, a biasing member 23c is provided between the upper portion 23na and the lower portion 23mc of the outer holder 23m. The inner holder 23n is urged upward by the urging member 23c. In the retracted state (see FIG. 2), when the lift pin 23a descends, the lift pin 23a and the inner holder 23n come into contact. By urging the inner holder 23n upward by the urging member 23c, the elevating pin 23a and the inner holder 23n can be brought into contact while maintaining a predetermined pressing force. By bringing the lifting pin 23a and the inner holder 23n into contact with each other while maintaining a predetermined pressing force, sufficient conduction between the lifting pin 23a and the inner holder 23n can be ensured.

また、付勢部材２３ｃにより、内側ホルダ２３ｎを上向きに付勢することにより、昇降ピン２３ａにより内側ホルダ２３ｎが移動して接触したときに、内側ホルダ２３ｎが動くことができる。 Further, by urging the inner holder 23n upward by the urging member 23c, the inner holder 23n can move when the inner holder 23n moves and comes into contact with the elevating pin 23a.

円筒部２３ｎｂは、円筒状の形状を有する。円筒部２３ｎｂの外面２３ｎＣは、外側ホルダ２３ｍの内面２３ｍＤと接触する。外面２３ｎＣと内面２３ｍＤとが接触することにより、外側ホルダ２３ｍと内側ホルダ２３ｎとの間が導通する。内側ホルダ２３ｎは、外側ホルダ２３ｍに対して移動する。そこで、外面２３ｎＣと内面２３ｍＤとが摺動しやすいように、外面２３ｎＣには、フッ素系樹脂を含有する金属膜が形成されている。例えば、金属膜としては、ニッケル又は白金が用いられる。 The cylindrical portion 23nb has a cylindrical shape. The outer surface 23nC of the cylindrical portion 23nb contacts the inner surface 23mD of the outer holder 23m. The contact between the outer surface 23nC and the inner surface 23mD establishes conduction between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, a metal film containing a fluororesin is formed on the outer surface 23nC so that the outer surface 23nC and the inner surface 23mD can easily slide. For example, nickel or platinum is used as the metal film.

なお、図５において、外側ホルダ２３ｍと内側ホルダ２３ｎとが接触して導通する部分を、点線の楕円で囲って示す。 In addition, in FIG. 5, the portion where the outer holder 23m and the inner holder 23n are in contact and electrically conductive is shown surrounded by a dotted ellipse.

（付勢部材２３ｃ）
付勢部材２３ｃは、内側ホルダ２３ｎを上向きに付勢する。付勢部材２３ｃは、弾性部材である。付勢部材２３ｃは、例えば、つるまきバネである。付勢部材２３ｃは、外側ホルダ２３ｍと内側ホルダ２３ｎとの間に配置される。より具体的には、付勢部材２３ｃは、外側ホルダ２３ｍの下部２３ｍｃと内側ホルダ２３ｎの上部２３ｎａとの間に配置される。付勢部材２３ｃは導電体で形成されてもよい。付勢部材２３ｃを導電体で形成することにより、付勢部材２３ｃを介して外側ホルダ２３ｍと内側ホルダ２３ｎとの間の導通を強化することができる。 (Biasing member 23c)
The biasing member 23c biases the inner holder 23n upward. The biasing member 23c is an elastic member. The biasing member 23c is, for example, a helical spring. The biasing member 23c is arranged between the outer holder 23m and the inner holder 23n. More specifically, the biasing member 23c is arranged between the lower part 23mc of the outer holder 23m and the upper part 23na of the inner holder 23n. The biasing member 23c may be formed of a conductor. By forming the biasing member 23c with a conductor, it is possible to strengthen the conduction between the outer holder 23m and the inner holder 23n via the biasing member 23c.

（Ｏリング２３ｄ）
Ｏリング２３ｄは、昇降ピン２３ａとホルダ２３ｂとの間の気密を確保する。Ｏリング２３ｄは、外側ホルダ２３ｍにおけるリング溝２３ｍｇに設けられる。Ｏリング２３ｄは、昇降ピン２３ａが退避状態にあるときに、昇降ピン２３ａにおける上部２３ａ１とリング溝２３ｍｇの間に介在する。Ｏリング２３ｄが昇降ピン２３ａにおける上部２３ａ１とリング溝２３ｍｇの間に介在することにより、Ｏリング２３ｄは昇降ピン２３ａとホルダ２３ｂとの間の気密を確保する。 (O-ring 23d)
The O-ring 23d ensures airtightness between the lifting pin 23a and the holder 23b. The O-ring 23d is provided in the ring groove 23mg in the outer holder 23m. The O-ring 23d is interposed between the upper portion 23a1 of the lifting pin 23a and the ring groove 23mg when the lifting pin 23a is in the retracted state. Since the O-ring 23d is interposed between the upper portion 23a1 of the lifting pin 23a and the ring groove 23mg, the O-ring 23d ensures airtightness between the lifting pin 23a and the holder 23b.

（接続部２３ｅ）
接続部２３ｅは、本体部２１と昇降部２３ｆとの間を接続する。接続部２３ｅは、例えば、ベローズにより形成される。接続部２３ｅは、導電性部材により形成される。 (Connection part 23e)
The connecting portion 23e connects the main body portion 21 and the elevating portion 23f. The connecting portion 23e is formed of, for example, a bellows. The connecting portion 23e is formed of a conductive member.

（昇降部２３ｆ）
昇降部２３ｆは、昇降ピン２３ａを垂直方向に移動させる。昇降部２３ｆは、例えば、モータにより構成される。昇降部２３ｆは、モータを駆動することにより、昇降ピン２３ａを垂直方向に移動させる。 (Elevating part 23f)
The lifting portion 23f moves the lifting pin 23a in the vertical direction. The elevating section 23f is composed of, for example, a motor. The lifting portion 23f moves the lifting pin 23a in the vertical direction by driving a motor.

昇降部２３ｆは、昇降ピン２３ａの上端の上面２３ａＡと、載置面２０Ｓとの距離を調整できる。すなわち、昇降部２３ｆは、昇降ピン２３ａの上面２３ａＡと、載置面２０Ｓとの距離を調整可能である。昇降ピン２３ａの上面２３ａＡと、載置面２０Ｓとの距離を調整することにより、電場分布を調整することができる。例えば、昇降ピン２３ａの上部２３ａ１を、ガラス基板Ｇの近傍に位置するように調整する。具体的には、昇降ピン２３ａの上部２３ａ１と、ガラス基板Ｇを載置する載置面２０Ｓとの間隔が、０．０２ミリメートル以上０．２ミリメートル以下、例えば、０．０６ミリメートルとなるように調整する。なお、間隔を調整する場合には、昇降ピン２３ａの傾斜部２３ａ２の側面２３ａＣと内側ホルダ２３ｎの上端の傾斜面２３ｎＡとが接した状態で調整する。すなわち、付勢部材２３ｃが内側ホルダ２３ｎを押して、傾斜面２３ｎＡが側面２３ａＣに接触しながら、側面２３ａＣを押圧している状態で調整する。 The elevating portion 23f can adjust the distance between the upper surface 23aA of the upper end of the elevating pin 23a and the mounting surface 20S. That is, the elevating portion 23f can adjust the distance between the upper surface 23aA of the elevating pin 23a and the mounting surface 20S. The electric field distribution can be adjusted by adjusting the distance between the upper surface 23aA of the lifting pin 23a and the mounting surface 20S. For example, the upper part 23a1 of the lifting pin 23a is adjusted to be located near the glass substrate G. Specifically, the distance between the upper part 23a1 of the lifting pin 23a and the mounting surface 20S on which the glass substrate G is mounted is set to 0.02 mm or more and 0.2 mm or less, for example, 0.06 mm. adjust. In addition, when adjusting the interval, the adjustment is performed in a state where the side surface 23aC of the inclined portion 23a2 of the lifting pin 23a and the inclined surface 23nA at the upper end of the inner holder 23n are in contact with each other. That is, the biasing member 23c pushes the inner holder 23n, and the adjustment is performed in a state in which the inclined surface 23nA contacts the side surface 23aC and presses the side surface 23aC.

［電力供給部３０］
電力供給部３０は、基板載置台２０が備える基材２１ａに高周波電力を供給する。電力供給部３０は、基材２１ａと給電線３０ｗを介して接続される。電力供給部３０は、高周波電源３１ａ及び高周波電源３１ｂと、整合器３２ａ及び整合器３２ｂと、を備える。給電線３０ｗは、給電線３０ｗａ及び給電線３０ｗｂに分岐される。分岐された給電線３０ｗａは、整合器３２ａに接続される。また、分岐された給電線３０ｗｂは、整合器３２ｂに接続される。 [Power supply section 30]
The power supply unit 30 supplies high-frequency power to the base material 21a included in the substrate mounting table 20. The power supply unit 30 is connected to the base material 21a via a power supply line 30w. The power supply unit 30 includes a high frequency power source 31a, a high frequency power source 31b, and a matching box 32a and a matching box 32b. The power supply line 30w is branched into a power supply line 30wa and a power supply line 30wb. The branched power supply line 30wa is connected to a matching box 32a. Further, the branched power supply line 30wb is connected to a matching box 32b.

高周波電源３１ａは、プラズマ生成用の高周波電源である。高周波電源３１ａが生成する高周波電力の周波数は、例えば、１３．５６メガヘルツである。高周波電源３１ａは、整合器３２ａに高周波電力を出力する。整合器３２ａは、インピーダンスを整合させて、高周波電力を給電線３０ｗａ及び給電線３０ｗを介して、プラズマ生成用の高周波電力を基材２１ａに出力する。 The high frequency power source 31a is a high frequency power source for plasma generation. The frequency of the high frequency power generated by the high frequency power supply 31a is, for example, 13.56 MHz. The high frequency power supply 31a outputs high frequency power to the matching box 32a. The matching box 32a matches the impedance and outputs high frequency power for plasma generation to the base material 21a via the power supply line 30wa and the power supply line 30w.

高周波電源３１ｂは、バイアス生成用の高周波電源である。高周波電源３１ｂが生成する高周波電力の周波数は、例えば、３．２メガヘルツである。高周波電源３１ｂは、整合器３２ｂに高周波電力を出力する。整合器３２ｂは、インピーダンスを整合させて、高周波電力を給電線３０ｗｂ及び給電線３０ｗを介して、バイアス生成用の高周波電力を基材２１ａに出力する。 The high frequency power supply 31b is a high frequency power supply for bias generation. The frequency of the high frequency power generated by the high frequency power supply 31b is, for example, 3.2 MHz. The high frequency power supply 31b outputs high frequency power to the matching box 32b. The matching box 32b matches the impedance and outputs high frequency power for bias generation to the base material 21a via the power feed line 30wb and the power feed line 30w.

［ガス供給部４０］
ガス供給部４０は、ガラス基板Ｇを処理するための処理ガスを、処理容器１０に供給する。ガス供給部４０は、処理ガス供給源４１と、マスフローコントローラ４２と、バルブ４３と、を備える。 [Gas supply section 40]
The gas supply unit 40 supplies a processing gas for processing the glass substrate G to the processing container 10. The gas supply unit 40 includes a processing gas supply source 41, a mass flow controller 42, and a valve 43.

処理ガス供給源４１は、ガラス基板Ｇを処理するためのガスを供給する。処理ガス供給源４１は、例えば、ガラス基板Ｇ上に形成された金属膜、酸化シリコン膜、窒化シリコン膜などをエッチングするための処理ガスとして、ハロゲン系ガス、酸素ガス、アルゴンガス等、通常この分野で用いられるガスを供給する。 The processing gas supply source 41 supplies gas for processing the glass substrate G. The processing gas supply source 41 normally uses halogen gas, oxygen gas, argon gas, etc. as a processing gas for etching a metal film, silicon oxide film, silicon nitride film, etc. formed on the glass substrate G, for example. Supply gas used in the field.

マスフローコントローラ４２は、処理ガス供給源４１から供給される処理ガスの流量を調整する。マスフローコントローラ４２により流量調整された処理ガスは、バルブ４３を通過して、処理ガス供給管４０ｐを介して、シャワーヘッド１１に供給される。 The mass flow controller 42 adjusts the flow rate of the processing gas supplied from the processing gas supply source 41. The processing gas whose flow rate is adjusted by the mass flow controller 42 passes through the valve 43 and is supplied to the shower head 11 via the processing gas supply pipe 40p.

［排気部５０］
排気部５０は、処理容器１０の処理空間１０Ｓ内を排気する。排気部５０は、真空ポンプ５１を備える。真空ポンプ５１は、排気管１５に接続する。真空ポンプ５１は、例えば、ターボ分子ポンプである。 [Exhaust section 50]
The exhaust section 50 exhausts the inside of the processing space 10S of the processing container 10. The exhaust section 50 includes a vacuum pump 51. Vacuum pump 51 is connected to exhaust pipe 15. The vacuum pump 51 is, for example, a turbo molecular pump.

なお、電力供給部３０及びガス供給部４０をまとめてプラズマ生成部という場合がある。 Note that the power supply section 30 and the gas supply section 40 may be collectively referred to as a plasma generation section.

＜基板処理方法＞
本実施形態に係る基板載置台２０を備える基板処理装置１を用いた基板処理方法を説明する。図６は、本実施形態に係る基板載置台２０を備える基板処理装置１を用いた基板処理方法を説明するフロー図である。図６により、本実施形態に係る基板処理方法の工程について詳細を説明する。 <Substrate processing method>
A substrate processing method using the substrate processing apparatus 1 including the substrate mounting table 20 according to the present embodiment will be described. FIG. 6 is a flow diagram illustrating a substrate processing method using the substrate processing apparatus 1 including the substrate mounting table 20 according to the present embodiment. The steps of the substrate processing method according to this embodiment will be explained in detail with reference to FIG.

（ステップＳ１０）
処理を開始すると、基板処理装置１における処理容器１０の内部に、ガラス基板Ｇを搬入する。具体的には、ゲートバルブ１７を開にした状態で、基板搬入出口１６からガラス基板Ｇを、搬送装置により、処理容器１０の内部に搬送する。 (Step S10)
When the processing starts, the glass substrate G is carried into the processing container 10 in the substrate processing apparatus 1 . Specifically, with the gate valve 17 open, the glass substrate G is transported into the processing chamber 10 from the substrate loading/unloading port 16 by the transporting device.

（ステップＳ２０）
次に、昇降ピン２３ａを上昇させて、載置面２０Ｓから突出させる。そして、突出した昇降ピン２３ａの支持面に搬入したガラス基板Ｇを載置する。そして、昇降ピン２３ａにより、ガラス基板Ｇを支持する。 (Step S20)
Next, the lifting pin 23a is raised to protrude from the mounting surface 20S. Then, the glass substrate G carried in is placed on the support surface of the protruding lifting pin 23a. The glass substrate G is then supported by the lifting pins 23a.

ガラス基板Ｇを搬入した搬送装置は、処理容器１０から退出する。そして、ゲートバルブ１７を閉にする。 The transport device that has carried in the glass substrate G leaves the processing container 10. Then, the gate valve 17 is closed.

（ステップＳ３０）
次に、昇降ピン２３ａを下降させて、ピン孔２１ｈに収納する。昇降ピン２３ａを下降して、ピン孔２１ｈに収納すると、ガラス基板Ｇは凸部２１ｃ及び土手部２１ｄの上に載置される。ガラス基板Ｇが凸部２１ｃ及び土手部２１ｄの上に載置されることにより、ガラス基板Ｇが載置面２０Ｓに載置される。 (Step S30)
Next, the lifting pin 23a is lowered and stored in the pin hole 21h. When the elevating pin 23a is lowered and accommodated in the pin hole 21h, the glass substrate G is placed on the convex portion 21c and the bank portion 21d. By placing the glass substrate G on the convex portion 21c and the bank portion 21d, the glass substrate G is placed on the placement surface 20S.

（ステップＳ４０）
次に、昇降ピン２３ａを内側ホルダ２３ｎと接触させる。昇降ピン２３ａを下降させて、ピン孔２１ｈに収納する。昇降ピン２３ａを下降して、ピン孔２１ｈに収納すると、昇降ピン２３ａの側面２３ａＣが、内側ホルダ２３ｎの傾斜面２３ｎＡと接触する。昇降ピン２３ａの側面２３ａＣと内側ホルダ２３ｎの傾斜面２３ｎＡとが接触すると、昇降ピン２３ａと内側ホルダ２３ｎとの間が導通する。すなわち、昇降ピン２３ａと内側ホルダ２３ｎを接触させると、昇降ピン２３ａと内側ホルダ２３ｎとの間が導通する。昇降ピン２３ａと内側ホルダ２３ｎとの間が導通することにより、昇降ピン２３ａを基材２１ａと電気的に導通させる。 (Step S40)
Next, the lifting pin 23a is brought into contact with the inner holder 23n. The lifting pin 23a is lowered and stored in the pin hole 21h. When the elevating pin 23a is lowered and stored in the pin hole 21h, the side surface 23aC of the elevating pin 23a comes into contact with the inclined surface 23nA of the inner holder 23n. When the side surface 23aC of the elevating pin 23a and the inclined surface 23nA of the inner holder 23n come into contact, electrical conduction occurs between the elevating pin 23a and the inner holder 23n. That is, when the lifting pin 23a and the inner holder 23n are brought into contact, electrical conduction occurs between the lifting pin 23a and the inner holder 23n. By establishing electrical continuity between the lifting pin 23a and the inner holder 23n, the lifting pin 23a is electrically connected to the base material 21a.

（ステップＳ５０）
次に、ガラス基板Ｇに対してプラズマ処理を行う。いいかえると、ガラス基板Ｇに対してプラズマにより処理を施す。具体的には、ガス供給部４０から処理ガスを供給し、電力供給部３０から電力を供給することにより、プラズマ処理を行う。プラズマ処理が終了したら、処理ガスを排気部５０により排気する。 (Step S50)
Next, the glass substrate G is subjected to plasma treatment. In other words, the glass substrate G is processed by plasma. Specifically, plasma processing is performed by supplying processing gas from the gas supply section 40 and supplying electric power from the power supply section 30. When the plasma processing is completed, the processing gas is exhausted by the exhaust section 50.

（ステップＳ６０）
ガラス基板Ｇに対するプラズマ処理が終了したら、昇降ピン２３ａを上昇させて、載置面２０Ｓから突出させる。そして、突出した昇降ピン２３ａにより、プラズマ処理を施したガラス基板Ｇを持ち上げる。 (Step S60)
When the plasma treatment on the glass substrate G is completed, the elevating pin 23a is raised to protrude from the mounting surface 20S. Then, the glass substrate G subjected to the plasma treatment is lifted up using the protruding lifting pin 23a.

（ステップＳ７０）
次に、基板処理装置１における処理容器１０の内部から、ガラス基板Ｇを搬出する。具体的には、ゲートバルブ１７を開にした状態で、搬送装置を基板搬入出口１６から処理容器１０の内部に侵入させる。そして、ガラス基板Ｇを、搬送装置に載置して、処理容器１０の内部から搬出する。 (Step S70)
Next, the glass substrate G is carried out from inside the processing container 10 in the substrate processing apparatus 1 . Specifically, with the gate valve 17 open, the transfer device is introduced into the processing chamber 10 through the substrate loading/unloading port 16 . Then, the glass substrate G is placed on the transport device and carried out from inside the processing container 10.

本実施形態に係る基板載置台２０によれば、プラズマ処理を行う際に、下部電極として作用する基板載置台２０において、電界が不均一になることを抑制できる。本実施形態に係る基板載置台２０によれば、電界が不均一になることを抑制することにより、昇降ピンに対応する位置において基板処理が不均一になることを抑制できる。 According to the substrate mounting table 20 according to the present embodiment, it is possible to suppress the electric field from becoming non-uniform in the substrate mounting table 20 that acts as a lower electrode when performing plasma processing. According to the substrate mounting table 20 according to the present embodiment, by suppressing the electric field from becoming non-uniform, it is possible to prevent the substrate processing from becoming non-uniform at the positions corresponding to the lifting pins.

本実施形態に係る基板載置台２０は、基板処理装置１において、プラズマ処理を行う際に下部電極として作用する。下部電極を兼ねる基板載置台２０は、基板の一例であるガラス基板Ｇを昇降する昇降ピン２３ａを備える。昇降ピン２３ａを上下に動かすために、基板載置台２０における基材２１ａは、ピン孔２１ｈを有する。 The substrate mounting table 20 according to this embodiment functions as a lower electrode when plasma processing is performed in the substrate processing apparatus 1. The substrate mounting table 20, which also serves as a lower electrode, includes a lifting pin 23a that lifts and lowers a glass substrate G, which is an example of a substrate. In order to move the lifting pin 23a up and down, the base material 21a of the substrate mounting table 20 has a pin hole 21h.

基材２１ａがピン孔２１ｈを有することにより、ピン孔２１ｈの部分では、基板載置台２０を下部電極として作用させた場合、電界に不均一が生じる場合があった。本実施形態に係る基板載置台２０によれば、ピン孔２１ｈの内部に収納される昇降ピン２３ａと基材２１ａとを電気的導通が取れるようにして、ピン孔２１ｈにおいて電界が不均一になることを抑制できる。 Since the base material 21a has the pin holes 21h, when the substrate mounting table 20 is used as a lower electrode, non-uniform electric field may occur at the pin holes 21h. According to the substrate mounting table 20 according to the present embodiment, electrical continuity can be established between the lifting pin 23a housed inside the pin hole 21h and the base material 21a, so that the electric field becomes non-uniform in the pin hole 21h. can be suppressed.

具体的に説明すると、本実施形態に係る基板載置台２０は、ピン孔２１ｈに導電性部材により形成された昇降ピン２３ａを備える。また、本実施形態に係る基板載置台２０は、基材２１ａのピン孔２１ｈに通じる部分に、導電性部材で形成されたホルダ２３ｂを備える。そして、昇降ピン２３ａの径を上部２３ａ１で大きく、下部２３ａ３で小さくして段差となる傾斜部２３ａ２を有する。そして、傾斜部２３ａ２の側面２３ａＣにおいて、昇降ピン２３ａを収納時に、昇降ピン２３ａとホルダ２３ｂとが接触する構造とした。 Specifically, the substrate mounting table 20 according to the present embodiment includes a lifting pin 23a formed of a conductive member in a pin hole 21h. Further, the substrate mounting table 20 according to the present embodiment includes a holder 23b formed of a conductive member in a portion of the base material 21a that communicates with the pin hole 21h. Further, the diameter of the lifting pin 23a is increased at the upper portion 23a1 and decreased at the lower portion 23a3, thereby providing an inclined portion 23a2 that becomes a step. Further, on the side surface 23aC of the inclined portion 23a2, a structure is adopted in which the elevating pin 23a and the holder 23b come into contact when the elevating pin 23a is stored.

また、ホルダ２３ｂは同軸の外側ホルダ２３ｍと内側ホルダ２３ｎとで構成される。そして、内側ホルダ２３ｎの上部２３ｎａにおける傾斜面２３ｎＡが、昇降ピン２３ａを収納時に、傾斜部２３ａ２と接触する。また、内側ホルダ２３ｎは付勢部材２３ｃを介して外側ホルダ２３ｍに支持される。内側ホルダ２３ｎは付勢部材２３ｃを介して外側ホルダ２３ｍに支持されることにより、内側ホルダ２３ｎが上下動可能となる。内側ホルダ２３ｎが上下動可能となることにより、収納時の昇降ピン２３ａの先端の高さを調整できる。 Further, the holder 23b is composed of a coaxial outer holder 23m and an inner holder 23n. Then, the inclined surface 23nA at the upper part 23na of the inner holder 23n comes into contact with the inclined part 23a2 when the elevating pin 23a is stored. Moreover, the inner holder 23n is supported by the outer holder 23m via the biasing member 23c. The inner holder 23n is supported by the outer holder 23m via the biasing member 23c, so that the inner holder 23n can move up and down. By allowing the inner holder 23n to move up and down, the height of the tip of the lifting pin 23a during storage can be adjusted.

さらに、昇降ピン２３ａの中ほどで、基材２１ａと導通をとることにより、昇降ピン２３ａの下端で基材２１ａと導通をとる場合よりも、容量成分を小さくすることができる。また、昇降ピン２３ａを収納時に、昇降ピン２３ａの高さの調整幅にゆとりができて高さ調整が容易にできる。 Furthermore, by establishing conduction with the base material 21a at the middle of the lift pin 23a, the capacitance component can be made smaller than when conduction is established with the base material 21a at the lower end of the lift pin 23a. Further, when the lifting pin 23a is stored, there is a margin for adjusting the height of the lifting pin 23a, and the height can be easily adjusted.

なお、上記の説明では、ガラス基板Ｇを処理する場合について説明したが、処理する基板は、ガラス基板に限らず、例えば、シリコン、ガリウム又はそれらの合金等により形成される半導体基板等の基板でもよい。 In the above explanation, the case where the glass substrate G is processed is explained, but the substrate to be processed is not limited to the glass substrate, but may also be a substrate such as a semiconductor substrate formed of silicon, gallium, or an alloy thereof. good.

今回開示された本実施形態に係る基板載置台、基板処理装置及び基板処理方法は、すべての点において例示であって制限的なものではないと考えられるべきである。例えば、上記の説明では、基板処理装置として容量結合型平行平板プラズマエッチング装置の場合について説明したが、誘導結合型プラズマ装置など他の方式のプラズマ装置であってもよい。また、基板処理は、エッチング処理に限らず、成膜処理やアッシング処理など他の基板処理であってもよい。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で変形及び改良が可能である。上記複数の実施形態に記載された事項は、矛盾しない範囲で他の構成も取り得ることができ、また、矛盾しない範囲で組み合わせることができる。 The substrate mounting table, the substrate processing apparatus, and the substrate processing method according to the present embodiment disclosed this time should be considered to be illustrative in all respects and not restrictive. For example, in the above description, a capacitively coupled parallel plate plasma etching apparatus is used as the substrate processing apparatus, but other types of plasma apparatuses such as an inductively coupled plasma apparatus may be used. Further, the substrate processing is not limited to etching processing, and may be other substrate processing such as film formation processing or ashing processing. The embodiments described above can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the plurality of embodiments described above may be configured in other ways without being inconsistent, and may be combined without being inconsistent.

１ 基板処理装置
１０ 処理容器
２０ 基板載置台
２０Ｓ 載置面
２１ 本体部
２１ａ 基材
２１ｈ ピン孔
２３ 基板昇降部
２３ａ 昇降ピン
２３ｂ ホルダ
２３ｍ 外側ホルダ
２３ｎ 内側ホルダ
２３ｎｈ 貫通孔
２３ｃ 付勢部材
２３ｄ Ｏリング
３０ 電力供給部
４０ ガス供給部
ＡＸ 中心軸
ＢＸ 中心軸 1 Substrate processing apparatus 10 Processing container 20 Substrate mounting table 20S Mounting surface 21 Main body 21a Base material 21h Pin hole 23 Substrate elevating section 23a Elevating pin 23b Holder 23m Outer holder 23n Inner holder 23nh Through hole 23c Biasing member 23d O-ring 30 Power supply section 40 Gas supply section AX Center axis BX Center axis

Claims (11)

基板を載置する載置面を有する基板載置台であって、
前記載置面の下方に位置し導体で構成された基材と、
導体で構成され、前記載置面に対して昇降し、上部と下部との間に段差を有し、前記上部の径が前記下部の径よりも大きい昇降ピンと、
前記載置面に開口し前記基材の内部に形成された前記昇降ピンが突没するピン孔と、
前記昇降ピンが貫通する貫通孔を含み、前記基材に設けられ導体で構成されたホルダと、を備え、
前記ホルダは、共通の中心軸を有する外側ホルダと、内側ホルダと、を備え、
前記貫通孔は、前記内側ホルダの中心軸上に前記昇降ピンが上下動可能に形成され、
前記貫通孔の径は、前記昇降ピンの前記上部の径よりも小さく、
前記内側ホルダは、前記外側ホルダとの間に配置された弾性部材を介して、摺動可能に前記外側ホルダに支持される、
基板載置台。 A substrate mounting table having a mounting surface on which a substrate is placed,
a base material located below the mounting surface and composed of a conductor;
an elevating pin that is made of a conductor, that moves up and down with respect to the mounting surface, that has a step between an upper part and a lower part, and that the diameter of the upper part is larger than the diameter of the lower part;
a pin hole that opens in the placement surface and is formed inside the base material, into which the lifting pin protrudes and sinks;
a holder including a through hole through which the lifting pin passes, and is provided on the base material and made of a conductor;
The holder includes an outer holder and an inner holder having a common central axis,
The through hole is formed on a central axis of the inner holder so that the elevating pin can move up and down,
The diameter of the through hole is smaller than the diameter of the upper part of the lifting pin,
The inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.
Board mounting table. 前記昇降ピンを前記ピン孔に収納するときに、前記昇降ピンの前記段差は前記内側ホルダの前記貫通孔の上端と接し、前記昇降ピンが前記内側ホルダ及び前記外側ホルダを介して前記基材と電気的に導通する、
請求項１に記載の基板載置台。 When storing the lifting pin in the pin hole, the step of the lifting pin contacts the upper end of the through hole of the inner holder, and the lifting pin contacts the base material through the inner holder and the outer holder. electrically conductive,
The substrate mounting table according to claim 1. 前記昇降ピンの前記段差と前記内側ホルダの上端とが接した状態で、前記昇降ピンの上端と、前記載置面との距離を調整可能である、
請求項２に記載の基板載置台。 The distance between the upper end of the elevating pin and the mounting surface is adjustable in a state where the step of the elevating pin and the upper end of the inner holder are in contact with each other.
The substrate mounting stand according to claim 2. 前記基材の上部に、静電吸着電極が埋設された誘電体層を有し、
前記誘電体層の上面が前記載置面となる、
請求項１から請求項３のいずれか一項に記載の基板載置台。 A dielectric layer in which an electrostatic adsorption electrode is embedded is provided on the top of the base material,
The upper surface of the dielectric layer serves as the mounting surface;
The substrate mounting stand according to any one of claims 1 to 3. 前記昇降ピンを前記ピン孔に収納するときに、前記外側ホルダと前記昇降ピンの前記上部との間をシールするＯリングを更に備える、
請求項１から請求項４のいずれか一項に記載の基板載置台。 further comprising an O-ring that seals between the outer holder and the upper part of the lifting pin when the lifting pin is stored in the pin hole;
The substrate mounting table according to any one of claims 1 to 4. 処理容器の内部において基板を処理する基板処理装置であって、
前記処理容器の内部に配置され前記基板を載置する基板載置台と、
前記基板を処理するためのプラズマを前記処理容器の内部に生成するプラズマ生成部と、を備え、
前記基板を載置する載置面を有する前記基板載置台は、
前記載置面の下方に位置し導体で構成された基材と、
導体で構成され、前記載置面に対して昇降し、上部と下部との間に段差を有し、前記上部の径が前記下部の径よりも大きい昇降ピンと、
前記載置面に開口し前記基材の内部に形成された前記昇降ピンが突没するピン孔と、
前記昇降ピンが貫通する貫通孔を含み、前記基材に設けられ導体で構成されたホルダと、を備え、
前記ホルダは、共通の中心軸を有する外側ホルダと、内側ホルダと、を備え、
前記貫通孔は、前記内側ホルダの中心軸上に前記昇降ピンが上下動可能に形成され、
前記貫通孔の径は、前記昇降ピンの前記上部の径よりも小さく、
前記内側ホルダは、前記外側ホルダとの間に配置された弾性部材を介して、摺動可能に前記外側ホルダに支持される、
基板処理装置。 A substrate processing apparatus that processes a substrate inside a processing container,
a substrate mounting table disposed inside the processing container and mounting the substrate;
a plasma generation unit that generates plasma inside the processing container for processing the substrate;
The substrate mounting table has a mounting surface on which the substrate is mounted,
a base material located below the mounting surface and composed of a conductor;
an elevating pin that is made of a conductor, that moves up and down with respect to the mounting surface, that has a step between an upper part and a lower part, and that the diameter of the upper part is larger than the diameter of the lower part;
a pin hole that opens in the placement surface and is formed inside the base material, into which the lifting pin protrudes and sinks;
a holder including a through hole through which the lifting pin passes, and is provided on the base material and made of a conductor;
The holder includes an outer holder and an inner holder having a common central axis,
The through hole is formed on a central axis of the inner holder so that the elevating pin can move up and down,
The diameter of the through hole is smaller than the diameter of the upper part of the lifting pin,
The inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.
Substrate processing equipment. 前記昇降ピンを前記ピン孔に収納するときに、前記昇降ピンの前記段差は前記内側ホルダの前記貫通孔の上端と接し、前記昇降ピンが前記内側ホルダ及び前記外側ホルダを介して前記基材と電気的に導通する、
請求項６に記載の基板処理装置。 When storing the lifting pin in the pin hole, the step of the lifting pin contacts the upper end of the through hole of the inner holder, and the lifting pin contacts the base material through the inner holder and the outer holder. electrically conductive,
The substrate processing apparatus according to claim 6. 前記昇降ピンの前記段差と前記内側ホルダの上端とが接した状態で、前記昇降ピンの上端と、前記載置面との距離を調整可能である、
請求項７に記載の基板処理装置。 The distance between the upper end of the elevating pin and the mounting surface is adjustable in a state where the step of the elevating pin and the upper end of the inner holder are in contact with each other.
The substrate processing apparatus according to claim 7. 前記基材の上部に、静電吸着電極が埋設された誘電体層を有し、
前記誘電体層の上面が前記載置面となる、
請求項６から請求項８のいずれか一項に記載の基板処理装置。 A dielectric layer in which an electrostatic adsorption electrode is embedded is provided on the top of the base material,
The upper surface of the dielectric layer serves as the mounting surface;
The substrate processing apparatus according to any one of claims 6 to 8. 前記昇降ピンを前記ピン孔に収納するときに、前記外側ホルダと前記昇降ピンの前記上部との間をシールするＯリングを更に備える、
請求項６から請求項９のいずれか一項に記載の基板処理装置。 further comprising an O-ring that seals between the outer holder and the upper part of the lifting pin when the lifting pin is stored in the pin hole;
The substrate processing apparatus according to any one of claims 6 to 9. 基板処理装置の処理容器の内部において基板を処理する基板処理方法であって、
前記基板処理装置は、
前記処理容器の内部に配置され前記基板を載置する基板載置台と、
前記基板を処理するためのプラズマを前記処理容器の内部に生成するプラズマ生成部と、を備え、
前記基板を載置する載置面を有する前記基板載置台は、
前記載置面の下方に位置し導体で構成された基材と、
導体で構成され、前記載置面に対して昇降し、上部と下部との間に段差を有し、前記上部の径が前記下部の径よりも大きい昇降ピンと、
前記載置面に開口し前記基材の内部に形成された前記昇降ピンが突没するピン孔と、
前記昇降ピンが貫通する貫通孔を含み、前記基材に設けられ導体で構成されたホルダと、を備え、
前記ホルダは、共通の中心軸を有する外側ホルダと、内側ホルダと、を備え、
前記貫通孔は、前記内側ホルダの中心軸上に前記昇降ピンが上下動可能に形成され、
前記貫通孔の径は、前記昇降ピンの前記上部の径よりも小さく、
前記内側ホルダは、前記外側ホルダとの間に配置された弾性部材を介して、摺動可能に前記外側ホルダに支持され、
前記処理容器の内部に前記基板を搬入する工程と、
前記載置面よりも上部に、複数の前記昇降ピンを上昇させて突出させ、前記基板を支持する工程と、
前記昇降ピンを下降させて前記ピン孔に収納し、前記基板を前記載置面に載置する工程と、
前記昇降ピンと前記内側ホルダとを接触させ、前記昇降ピンを前記基材と電気的に導通させる工程と、
前記基板に対し前記プラズマにより処理を施す工程と、
を有する基板処理方法。 A substrate processing method for processing a substrate inside a processing container of a substrate processing apparatus, the method comprising:
The substrate processing apparatus includes:
a substrate mounting table disposed inside the processing container and mounting the substrate;
a plasma generation unit that generates plasma inside the processing container for processing the substrate;
The substrate mounting table has a mounting surface on which the substrate is mounted,
a base material located below the mounting surface and composed of a conductor;
a lifting pin that is made of a conductor, moves up and down with respect to the mounting surface, has a step between an upper part and a lower part, and has a diameter of the upper part larger than a diameter of the lower part;
a pin hole that opens in the placement surface and is formed inside the base material, into which the lifting pin protrudes and sinks;
a holder including a through hole through which the lifting pin passes, and is provided on the base material and made of a conductor;
The holder includes an outer holder and an inner holder having a common central axis,
The through hole is formed on a central axis of the inner holder so that the elevating pin can move up and down,
The diameter of the through hole is smaller than the diameter of the upper part of the lifting pin,
The inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder,
carrying the substrate into the processing container;
raising and protruding the plurality of lifting pins above the placement surface to support the substrate;
lowering the lifting pin to accommodate it in the pin hole and placing the substrate on the placement surface;
bringing the lifting pin into contact with the inner holder and electrically conducting the lifting pin with the base material;
treating the substrate with the plasma;
A substrate processing method comprising:
JP2022043800A 2022-03-18 2022-03-18 Substrate mounting table, substrate processing device, and substrate processing method Pending JP2023137546A (en)

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