JP2023134332A - Laminate structure, semiconductor device and method for manufacturing them - Google Patents

Abstract

To provide a laminate structure having excellent crystallinity, semiconductor devices, and a manufacturing method that can obtain them industrially advantageously.SOLUTION: In the steps of providing a compound element-supplying sacrificial layer containing a compound element on a crystal substrate and forming an insulating layer using the compound element of the compound element-supplying sacrificial layer, a laminated structure is manufactured in which the insulating layer incorporates the compound element in the compound element-supplying sacrificial layer provided on the crystal substrate, and the resulting laminated structure is used to manufacture semiconductor devices.SELECTED DRAWING: Figure 1

Description

The present invention relates to a stacked structure, a semiconductor device, and a manufacturing method thereof.

Conventionally, SOI (Silicon On Insulator), which uses a SiO ₂ film to isolate each element, has been used to prevent IC malfunctions and destruction caused by parasitic elements in the horizontal and vertical directions that occur with PN isolation. ) technology is known, and in recent years, methods for forming multiple semiconductor elements with different breakdown voltages on a single semiconductor substrate are also being considered. The application of is also being considered (Patent Document 1).

Furthermore, attempts have been made to form devices on flexible substrates such as plastics using SOI technology. For example, as disclosed in Patent Document 2, using a completed SOI substrate, a window is partially opened in the SOI layer to expose the BOX (Buried Oxide) layer, and then HF etching is performed to expose the HF There is a method in which the BOX is etched by penetrating in the horizontal direction to form pillars. After pillar formation, the SOI layer is attached to PET (polyethylene terephthalate), etc., and the SOI layer is peeled from the substrate along the pillar, and the SOI layer is formed on the PET, etc. to fabricate a device on a flexible substrate.SOI There is a method of transferring layers.

However, none of the SOI technologies is still satisfactory in terms of the crystallinity of the semiconductor film formed on the insulating film, the crystallinity of the insulating film, the insulation properties, etc., and further improvements in crystallinity and semiconductor properties are awaited. It was Further, when peeling and transferring an SOI layer, the process becomes complicated and peeling is difficult, so a new SOI technology that allows easy peeling and transfer has been awaited.

JP 2021-5718 Publication Japanese Patent Application Publication No. 2014-179580

An object of the present invention is to provide a laminated structure and a semiconductor device having excellent crystallinity, and a manufacturing method that can industrially advantageously obtain them.

As a result of intensive studies to achieve the above object, the present inventors have discovered a method for manufacturing a laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystal substrate. A laminated structure including an insulating film having excellent crystallinity can be easily obtained in the step of providing a sacrificial supply layer and the step of forming the insulating layer using the compound element of the compound element supply sacrificial layer; We have discovered that when a conductive film or a semiconductor film is formed on the insulating film, it has excellent crystallinity, excellent electrode properties and semiconductor properties, and is useful for peeling and transfer. It has been found that the body and the method for manufacturing the same can solve the above-mentioned conventional problems all at once.
Further, after obtaining the above knowledge, the present inventors conducted further studies and completed the present invention.

That is, the present invention relates to the following inventions.
[1] A method for manufacturing a laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystal substrate, the step comprising: providing a compound element supply sacrificial layer containing a compound element on the crystal substrate; and supplying the compound element. A method for manufacturing a laminated structure, comprising the step of forming the insulating layer using a compound element of a sacrificial layer.
[2] The manufacturing method according to [1] above, wherein after using the compound element, a compound element gas is introduced to form the insulating layer in the presence of the compound element gas.
[3] The manufacturing method according to [1] or [2], wherein the lamination is performed by vapor deposition or sputtering.
[4] The manufacturing method according to any one of [1] to [3], wherein the compound element supply sacrificial layer is an oxide film provided on the crystal substrate.
[5] A laminated structure in which an insulating layer is laminated on a crystal substrate, wherein the insulating layer incorporates a compound element in a compound element supply sacrificial layer containing a compound element provided on the crystal substrate. A laminated structure characterized by:
[6] The laminated structure according to [5], wherein the crystal substrate is a crystalline Si substrate.
[7] The laminated structure according to [5] or [6], wherein the compound element supply sacrificial layer includes a compound film.
[8] The laminated structure according to [7], wherein the compound film has a thickness of more than 1 nm and less than 100 nm.
[9] The laminated structure according to any one of [5] to [8], wherein the insulating layer is an epitaxial film containing a crystalline compound.
[10] A laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystal substrate, and a crystalline conductive film or a semiconductor film is further laminated on the insulating layer, wherein the insulating layer is laminated with the crystalline compound. A laminated structure characterized in that a compound element in a compound element supply sacrificial layer containing a compound element provided on a substrate is incorporated.
[11] The laminated structure according to [5], including an SOI substrate in which a semiconductor film is laminated on the insulating layer.
[12] The laminated structure according to [5], including an electrode substrate in which a crystalline conductive film is laminated on the insulating layer.
[13] A semiconductor device including a laminated structure, wherein the laminated structure is the laminated structure according to any one of [5] to [12].
[14] The semiconductor device according to [9] above, including a horizontal device.
[15] A method for manufacturing a semiconductor device using a laminated structure, characterized in that the laminated structure is the laminated structure according to any one of [5] to [12] above. Method.
[16] A system including a semiconductor device, wherein the semiconductor device is the semiconductor device according to [13] or [14].
[17] Between the crystal substrate and the epitaxial film, an amorphous thin film containing a constituent metal of the epitaxial film and/or the crystal substrate and a compound element of the crystalline compound and/or a part of the crystal substrate. The laminated structure according to item [9], further comprising one or more buried layers containing the constituent metal and the compound element.
[18] Between the crystal substrate and the epitaxial film, one or more of the amorphous thin films containing the constituent metals of the epitaxial film and the compound element and/or a part of the crystal substrate are embedded; The laminated structure according to the above [17], which has a buried layer containing a constituent metal of the epitaxial film and the compound element.
[19] Between the crystal substrate and the epitaxial film, an amorphous thin film containing the constituent metal of the epitaxial film and/or the crystal substrate and the compound element, and one or more amorphous thin films embedded in a part of the crystal substrate. The laminated structure according to [17], further comprising a buried layer containing the constituent metal and the compound element.
[20] The laminated structure according to any one of [17] to [19], wherein the constituent metal contains Hf.
[21] The laminated structure according to any one of [17] to [20], wherein the amorphous thin film has a thickness of 1 nm to 10 nm.
[22] The laminated structure according to any one of [17] to [21], wherein the buried layer has a substantially inverted triangular cross-sectional shape.
[23] An electronic device, electronic device, or system including a laminated structure, wherein the laminated structure is the laminated structure according to any one of [17] to [22] above. device, electronic equipment or system.

The laminated structure and semiconductor device of the present invention have excellent crystallinity, and the manufacturing method of the present invention has the effect that the laminated structure and the semiconductor device can be obtained industrially advantageously. play.

1 is a diagram schematically showing an example of a preferred embodiment of a laminated structure of the present invention. FIG. 3 is a diagram schematically showing an SOI island formation process in peeling and transfer, which is an example of a preferable application of the laminated structure of the present invention. FIG. 3 is a diagram schematically showing an HF etching step in peeling/transfer, which is an example of a preferred application of the laminated structure of the present invention. FIG. 2 is a diagram schematically showing a step of attaching the laminated structure of the present invention to a flexible substrate in peeling and transfer, which is an example of a preferred application example. FIG. 2 is a diagram schematically showing a peeling process in peeling/transfer, which is an example of a preferable application of the laminated structure of the present invention. It is a figure which shows typically an example of the oxide film formation process of the suitable manufacturing method of the laminated structure of this invention. FIG. 3 is a diagram schematically showing an example of an insulating film forming step of a preferred method for manufacturing a laminated structure of the present invention. A cross-sectional STEM image observed in an example is shown. A STEM image observed in an example is shown. A STEM image observed in an example is shown. 1 is a diagram schematically showing a preferred example of an insulated gate bipolar transistor (IGBT) obtained in the present invention. 12 is a diagram schematically showing an example of a suitable manufacturing process for the insulated gate bipolar transistor (IGBT) of FIG. 11. FIG. 1 is a diagram schematically showing a preferred example of a power supply system. FIG. 2 is a diagram schematically showing a preferred example of a system device. It is a figure which shows typically a suitable example of the power supply circuit diagram of a power supply device. It is a figure showing the XPS measurement result in an example. It is a figure showing the XPS measurement result in an example. 1 is a diagram schematically showing a film forming apparatus suitably used in Examples. A cross-sectional STEM image measured in an example is shown. A STEM image measured in an example is shown. A STEM image of a buried layer measured in an example is shown.

The method for manufacturing a laminated structure of the present invention is a method for manufacturing a laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystal substrate, and the method comprises laminating a sacrificial layer for supplying a compound element containing a compound element on the crystal substrate. and forming the insulating layer using the compound element of the compound element supply sacrificial layer. The crystalline compound is not particularly limited and may be a known crystalline compound, but in the present invention, it is preferable that the crystalline compound is a metal compound, and the metal of the metal compound is also a known metal. It's fine. Examples of the metal include D block metals in the periodic table. The metal compound may also be a known compound, and examples of the crystalline compound include oxides, nitrides, oxynitrides, sulfides, oxysulfides, borides, oxyborides, and carbides. , oxycarbide, boron carbide, boron nitride, boron sulfide, carbonitride, carbon sulfide, or carboride. It is preferable because it can provide better stress relaxation and warp reduction as a buffer layer, and it can also provide better electrical properties (particularly at the interface between the conductive layer and the insulating layer). Further, the crystalline compound is preferably a crystalline oxide, the compound film is preferably an oxide film, and the compound element is preferably oxygen. In the present invention, the crystalline compound is preferably a crystalline nitride, the compound film is preferably a nitride film, and the compound element is preferably nitrogen. The manufacturing method provides a laminated structure in which an insulating layer is laminated on a crystal substrate, wherein the insulating layer incorporates oxygen atoms in an oxygen-containing sacrificial layer provided on the crystal substrate. A laminated structure can be easily obtained, and such a laminated structure is also included in the present invention.

The oxygen-supplying sacrificial layer may be a sacrificial layer that contains oxygen and in which part or all of the layer disappears or is destroyed when oxygen atoms are incorporated. Preferably, the layer is an oxygen-supplying sacrificial layer in which oxygen atoms are taken in and the oxide film itself disappears during crystal growth. Further, in the present invention, it is preferable that the oxygen supply sacrificial layer is an oxide film provided on the crystal substrate.

FIG. 1 shows a preferred example of the laminated structure, in which a first epitaxial layer 3 is laminated as the insulating film on a crystal substrate 1 using an oxide film. Furthermore, a second epitaxial layer 4 is laminated on the first epitaxial layer 3 as a conductive film or a semiconductor film. Note that in this specification, the terms "film" and "layer" may be interchanged depending on the case or the situation. In addition, although oxides are cited as preferred examples of the laminated structure, the present invention is not limited to these preferred examples, and the present invention is also suitable for various compounds such as nitrides. can be applied.

The laminated structure of the present invention is produced by forming an oxide film 2 of the crystal substrate 1 on a crystal substrate 1 as shown in FIG. 6, for example, and then using oxygen in the oxide film 2 as shown in FIG. This can be easily manufactured by forming an insulating film (first epitaxial layer) 3 made of a crystalline oxide on a crystal substrate 1. In the present invention, the laminated structure may have the oxide film 2 on the crystal substrate 1, but when the insulating film 3 is formed, all the oxygen in the oxide film 2 is taken in and the oxide film 2 is removed. The film 2 may also disappear. Each will be explained in more detail below, but the present invention is not limited to these specific examples.

The crystal substrate (hereinafter also simply referred to as "substrate") is not particularly limited, such as the substrate material, as long as it does not impede the object of the present invention, and may be any known crystal substrate. It may be an organic compound or an inorganic compound. In the present invention, it is preferable that the crystal substrate contains an inorganic compound. In the present invention, it is preferable that the substrate has crystals on part or all of its surface, and it is preferable that the substrate has crystals on all or part of its main surface on the crystal growth side. More preferably, a crystal substrate having crystals on the entire main surface on the crystal growth side is most preferable. The crystal is not particularly limited as long as it does not impede the purpose of the present invention, and the crystal structure is also not particularly limited, but may be cubic, tetragonal, trigonal, hexagonal, orthorhombic, or monoclinic. It is preferable that the crystal be a crystal of a type, and a crystal oriented in (100) or (200) direction is more preferable. Further, the crystal substrate may have an off-angle, and examples of the off-angle include an off-angle of 0.2° to 12.0°. Here, the "off angle" refers to the angle between the substrate surface and the crystal growth plane. The shape of the substrate is not particularly limited as long as it is plate-like and serves as a support for the insulating film. Although it may be an insulating substrate or a semiconductor substrate, in the present invention, the substrate is preferably a Si substrate, more preferably a crystalline Si substrate, and (100) Most preferably, it is a crystalline Si substrate oriented in the direction of . In addition, examples of the substrate material include, in addition to the Si substrate, one or more metals belonging to Groups 3 to 15 of the periodic table, or oxides of these metals. The shape of the substrate is not particularly limited, and may be approximately circular (for example, circular, oval, etc.) or polygonal (for example, triangular, square, rectangular, pentagonal, hexagonal, heptagonal, etc.). , octagonal, nonagonal, etc.), and various shapes can be suitably used. Further, in the present invention, a large-area substrate can be used, and by using such a large-area substrate, the area of the insulating film can be increased.

Further, in the present invention, it is preferable that the crystal substrate has a flat surface, but the quality of crystal growth of the insulating film may be improved if the crystal substrate has an uneven shape on part or all of the surface. This is preferable because it provides better results. The above-mentioned crystal substrate having an uneven shape may be used as long as an uneven part consisting of a recess or a convex part is formed on a part or all of the surface. It is not limited, and it may be an uneven part consisting of a convex part, an uneven part consisting of a concave part, or an uneven part consisting of a convex part and a concave part. Furthermore, the uneven portions may be formed from regular protrusions or recesses, or may be formed from irregular protrusions or recesses. In the present invention, it is preferable that the uneven portions are formed periodically, and more preferably that they are patterned periodically and regularly. The shape of the uneven portion is not particularly limited, and examples thereof include a stripe shape, a dot shape, a mesh shape, or a random shape, but in the present invention, a dot shape or a stripe shape is preferable, and a dot shape is more preferable. . Further, when the uneven portions are patterned periodically and regularly, the pattern shape of the uneven portions may be a polygonal shape such as a triangle, a quadrilateral (for example, a square, a rectangle, or a trapezoid), a pentagon, or a hexagon. Preferably, the shape is circular or elliptical. In addition, when forming uneven portions in the form of dots, it is preferable that the lattice shape of the dots is a lattice shape such as a square lattice, an orthorhombic lattice, a triangular lattice, a hexagonal lattice, etc., and a triangular lattice shape is used. is more preferable. The cross-sectional shape of the concave portion or convex portion of the uneven portion is not particularly limited, and includes, for example, a U-shape, a U-shape, an inverted U-shape, a wave shape, a triangle, a quadrilateral (for example, a square, a rectangle, a trapezoid, etc.). ), polygons such as pentagons and hexagons. The thickness of the crystal substrate is not particularly limited, but is preferably 50 to 2000 μm, more preferably 100 to 1000 μm.

The oxide film is not particularly limited as long as it is an oxide film that can incorporate oxygen atoms into the insulating film as the oxygen supply sacrificial layer, and usually contains an oxide material. The oxidizing material is not particularly limited as long as it does not impede the object of the present invention, and may be any known oxidizing material. Examples of the oxidizing material include metal or metalloid oxides. In the present invention, it is preferable that the oxide film contains the oxidizing material of the crystal substrate, and examples of such an oxide film include a thermal oxide film, a natural oxide film, and the like of the crystal substrate. Further, in the present invention, the oxide film may be a sacrificial layer in which part or all of the film disappears or is destroyed when oxygen atoms are taken in; It is preferable that the oxide layer is an oxygen-supplying sacrificial layer in which oxygen atoms are taken in and the oxide film itself disappears during crystal growth. Further, the oxide film may be patterned, for example, in a stripe shape, a dot shape, a mesh shape, or a random shape. Note that the thickness of the oxide film is not particularly limited, but is preferably greater than 1 nm and less than 100 nm.

The insulating film (first epitaxial layer) is not particularly limited as long as it contains an insulator and further contains an epitaxial film in which oxygen atoms in the oxide film are incorporated. Note that "an epitaxial film in which oxygen atoms in the oxide film are incorporated" means that oxygen atoms in the oxide film are taken away by the epitaxial film during crystal growth of the epitaxial film. The epitaxial film is not particularly limited as long as it contains an insulator and is crystal-grown by incorporating oxygen atoms in the oxide film, but in the present invention, it preferably contains a crystalline oxide, and a metal oxide. It is more preferable to include things. Suitable examples of the metal oxide include oxides of one or more metals belonging to block d of the periodic table, silicon oxide, and the like. Further, in the present invention, it is preferable that the insulating film contains a neutron absorbing material. The neutron absorbing material may be a known neutron absorbing material, and in the present invention, such a neutron absorbing material is used to improve adhesion, crystallinity, and functionality by incorporating oxygen from the oxide film. The properties of the film can be improved. Note that a suitable example of the neutron absorbing material is hafnium (Hf). Further, the insulating film may be composed of one type or two or more types of epitaxial films.

In the present invention, it is preferable that a second epitaxial layer made of a conductive film or a semiconductor film is laminated on the insulating film, either directly or via another layer. By stacking the layers in this manner, the first epitaxial layer is regularly formed at the interface between the first epitaxial layer and the second epitaxial layer so that the lattice constant is approximately the same as the lattice constant of the second epitaxial layer. It can be transformed into. A suitable example of the above-mentioned regular transformation is a transformation in which the shape deforms into a peak-to-valley structure, and in the present invention, the angles formed by adjacent apexes and bottom points of the peak-to-valley structure are Preferably, they are different, and more preferably, the angles are each within a range of 30° to 45°. Here, the first epitaxial layer usually has a first crystal plane and a second crystal plane, but due to the transformation, the lattice constant of the first crystal plane and the second crystal plane becomes Since a difference may occur, it is preferable that the difference in lattice constant between the first crystal plane and the second crystal plane is within the range of 0.1% to 20%. In the present invention, since the first crystal plane can be made substantially the same as the lattice constant of the second epitaxial layer, the difference in lattice constant between the first epitaxial layer and the second epitaxial layer is 0.0. A range of 1% to 20% can be easily achieved.

In the present invention, when a conductive film is laminated on the insulating film, and when the conductive film is made of a single crystal film of a conductive metal, it is possible to easily obtain a defect-free film with a large area. Therefore, not only the function as an electrode but also the characteristics of the device etc. can be improved. The conductive metal is not particularly limited as long as it does not impede the purpose of the present invention, and examples thereof include gold, silver, platinum, palladium, silver palladium, copper, nickel, and alloys thereof. preferably contains platinum. In addition, in the present invention, according to the above-described manufacturing method, it is possible to obtain as an electrode a single crystal film that is defect-free in an area of preferably 100 nm ² or more, and more preferably defect-free in an area of 1000 nm ² or more. A single crystal film can be easily obtained. Furthermore, a single crystal film having a thickness of preferably 100 nm or more can be easily obtained as an electrode. Note that when the conductive film made of a single crystal film of a conductive metal is laminated on the insulating film, the laminated structure is preferably used as an electrode substrate in which a crystalline conductive film is laminated on the insulating film. It can be used for.

The semiconductor film is not particularly limited as long as it contains a semiconductor, and may be any known semiconductor film; however, in the present invention, it is preferable that it contains a cubic semiconductor. Examples of the cubic semiconductor include c-BN, c-AlN, c-GaN, c-InN, c-SiC, GaAs, AlAs, InAs, GaP, AlP, InP, and mixed crystal semiconductors thereof. It will be done. The thickness of each of the conductive film and the semiconductor film is not particularly limited, but is preferably 10 nm to 1000 μm, more preferably 10 nm to 100 μm.

The laminated structure is produced in a method for manufacturing a laminated structure in which an insulating film is laminated on a crystal substrate via at least an oxide film, in which the lamination is performed at 350° C. to 700° C. to remove oxygen atoms in the oxide film. This can be easily obtained by forming an insulating film using the above-described method. When the temperature is in the range of 350° C. to 700° C., oxygen atoms in the oxide film can be easily incorporated into the insulating film to cause crystal growth.

In the present invention, it is preferable that the insulating film is formed using oxygen gas after the lamination is performed using oxygen atoms in the oxide film. Further, by forming the film in this way, a layered structure in which an epitaxial film containing a crystalline compound is stacked on a crystal substrate, wherein the epitaxial film and the epitaxial film are stacked between the crystal substrate and the epitaxial film. /or an amorphous thin film containing a constituent metal of the crystalline substrate and a compound element of the crystalline compound; and/or one or more embedded in a part of the crystalline substrate and containing the constituent metal and the compound element. A laminated structure having a buried layer can be easily obtained. Further, in the present invention, between the crystal substrate and the epitaxial film, an amorphous thin film containing a constituent metal of the epitaxial film and a compound element of the crystalline compound and/or an amorphous thin film containing a compound element of the crystalline compound and/or a It is preferable to have two or more buried layers containing the constituent metal of the epitaxial film and the compound element because the epitaxial film has better crystallinity. Further, in the present invention, an amorphous thin film containing a constituent metal of the epitaxial film and/or the crystal substrate and a compound element of the crystalline compound is provided between the crystal substrate and the epitaxial film; The functionality of the epitaxial film can be further improved by having one or more buried layers containing the constituent metal and the compound element embedded in a part of the layer. This is preferable because it can be done. Further, in the present invention, it is preferable that the constituent metal contains Hf, since this further promotes stress relaxation and further enables realization of stress relaxation in multiple stages. Further, in the present invention, it is preferable that the thickness of the amorphous thin film is 1 nm to 10 nm because it can further improve the crystallinity of the epitaxial film, and the amorphous thin film having such a preferable thickness is preferably used in the present invention. can be easily obtained according to a preferred manufacturing method. Further, in the present invention, it is preferable that the buried layer has a substantially inverted triangular cross-sectional shape, since this can further improve the functionality of the epitaxial film. In addition, these preferable laminated structures are as follows. This can be easily obtained by appropriately adjusting the thickness of the oxide film, the timing of introducing the oxygen gas, etc.

As the laminating means used in the lamination, the means for forming the insulating film is usually suitably used, and the film forming means may be any known film forming means. In the present invention, it is preferable that the film forming means is vapor deposition or sputtering.

The laminated structure obtained as described above can be used in a semiconductor device as it is or after being further processed, if desired, according to a conventional method. Further, when the laminated structure is used in a semiconductor device, it may be used as it is in the semiconductor device, or it may be used in other layers (for example, an insulator layer, a semi-insulator layer, a conductor layer, a semiconductor layer, a buffer layer, or other layers). It may be used after forming an intermediate layer, etc.). In the present invention, it is preferable to use the laminated structure as an SOI substrate in which a semiconductor film is laminated on the insulating film.

The semiconductor device is not particularly limited as long as it does not impede the object of the present invention, and may be a known semiconductor device. Although it may be a vertical device or a horizontal device, in the present invention, it is preferable that the semiconductor device is a horizontal device. Examples of the semiconductor device include a diode or a transistor (for example, a MOSFET or a JFET), and an insulated gate semiconductor device (for example, a MOSFET or an IGBT) or a semiconductor device having a Schottky gate (for example, a MESFET). etc.) are preferred, MOSFETs and/or IGBTs are more preferred, and lateral MOSFETs and/or lateral IGBTs are most preferred.

FIG. 11 shows a horizontal IGBT, a horizontal NMOS, and a horizontal PMOS suitable for the present invention. In the lateral IGBT, lateral NMOS, and lateral PMOS shown in FIG. 1, an insulating film 26a is formed on a crystal substrate 29, and each element is provided on the insulating film 26a. The lateral IGBT in FIG. 11 includes a gate electrode 21, an emitter electrode 22, a collector electrode 23, an insulating film 26, a p-type semiconductor 27, an n-type semiconductor 28, and an n ^- type semiconductor 28a. Further, the NMOS shown in FIG. 11 includes a gate electrode 21, a drain electrode 24, a source electrode 25, an insulating film 26, a p-type semiconductor 27, an n-type semiconductor 28, and an n ^- type semiconductor 28a. Further, the PMOS shown in FIG. 11 includes a gate electrode 21, a drain electrode 24, a source electrode 25, an insulating film 26, a p-type semiconductor 27, and an n ^- type semiconductor 28a.

FIG. 12 shows a preferred manufacturing process for the insulated gate bipolar transistor (IGBT) shown in FIG. 11, etc. In the manufacturing process shown in FIG. 12, a stacked structure is used in which an insulating film 26a is formed on a crystal substrate 29, and an n ^- type semiconductor (for example, a Si semiconductor) 28a is further formed on the insulating film 26a. In FIG. 12(a), a trench is provided in the laminated structure using a known method, and the surface side of an n ^- type semiconductor (for example, a Si semiconductor) 28a is further oxidized using a known method. . In FIG. 12(b), the stacked structure shown in FIG. 12(a) is treated with polysilicon 31 using known means to fill the trenches with polysilicon 31, and then a polysilicon layer is formed on the oxidized surface. do. In FIG. 12(c), the layered structure shown in FIG. 12(b) is polished using known means to obtain the layered structure shown in FIG. 12(c). The obtained laminated structure is subjected to various device manufacturing steps using known means.

The lateral IGBT, lateral NMOS, and lateral PMOS obtained in this way have element isolation using a trench isolation structure, have a small isolation area, and can directly configure an inverter with a power source rectified and smoothed from a commercial power source. It is also possible. Furthermore, a high-voltage output section and a control circuit section can be configured on the same chip, making it possible to realize an excellent power IC. In particular, since each device inside the IC is completely isolated by a dielectric material, it is possible to eliminate the influence of parasitic elements, and a highly reliable system can be realized.

In addition to the above-described matters, the semiconductor device of the present invention can be suitably used as a semiconductor device such as a power module, an inverter or a converter by using known means, and furthermore, the semiconductor device can be suitably used as a semiconductor device such as a power module, an inverter, or a converter. Suitable for use in systems, etc. Note that the power supply device can be manufactured by connecting the semiconductor device to a wiring pattern or the like using a known method. Figure 13 shows an example of a power supply system. FIG. 13 shows a power supply system using a plurality of the power supply devices and control circuits. The power supply system can be used in a system device in combination with an electronic circuit, as shown in FIG. Note that FIG. 15 shows an example of a power supply circuit diagram of the power supply device. Figure 15 shows a power supply circuit of a power supply device consisting of a power circuit and a control circuit, in which DC voltage is switched at high frequency by an inverter (consisting of MOSFETAs to D) and converted to AC, and then insulation and transformation are performed by a transformer. , rectified by rectifier MOSFETs (A to B'), smoothed by DCL (smoothing coils L1, L2) and a capacitor, and outputs a DC voltage. At this time, a voltage comparator compares the output voltage with a reference voltage, and a PWM control circuit controls the inverter and rectifier MOSFET so that the desired output voltage is achieved.

(Example 1)
After treating the crystal growth side of the Si substrate (100) with RIE and heating it in the presence of oxygen to form a thermal oxide film, the metal of the evaporation source and the Si An insulating film made of crystalline oxide was formed on the Si substrate by causing a thermal reaction with oxygen in the oxide film on the substrate. Next, an insulating film was further formed by a vapor deposition method by flowing oxygen, lowering the temperature, and increasing the pressure. The conditions of the vapor deposition method during this film formation were as follows.
Vapor deposition source: Hf, Zr
Voltage: 3.5-4.75V
Pressure: 3× ^10-2 to 6× ^10-2 Pa
Substrate temperature: 450-700℃

Next, a metal film of platinum (Pt) was formed as a conductive film on the insulating film by sputtering. The conditions at this time are shown below.
Equipment: Sputtering equipment QAM-4 manufactured by ULVAC
Pressure: 1.20× ^10-1 Pa
Target: Pt
Power: 100W (DC)
Thickness: 100nm
Substrate temperature: 450-600℃

The obtained laminated structure was a laminated structure containing an insulating film having good crystallinity. Further, a cross-sectional STEM image of the obtained laminated structure is shown in FIG. From FIG. 8, it can be seen that a regular peak-valley structure is provided at the interface between the insulating film and the conductive film, and the angles formed by the mutually adjacent apexes and bottom points of the peak-valley structure are within the range of 30° to 45°. You can see that it's different. Further, X-ray crystal lattice images of the conductive film are shown in FIGS. 9 and 10. From FIGS. 9 and 10, it can be seen that the conductive film has a large area without defects, has excellent crystallinity, and is particularly excellent in electrode properties. In addition, the crystals of the crystal substrate of the laminated structure, the single crystal film of the crystalline metal oxide, and the conductive film were measured using an X-ray diffraction apparatus. FIG. 16 shows the XPS measurement results. As is clear from FIG. 16, a (Hf, Zr)O ₂ film and a Pt single crystal film having good crystallinity were formed on the Si crystal substrate.

(Example 2)
A platinum (Pt) metal film was formed as a conductive film on a single crystalline metal nitride film in the same manner as in Example 1, except that nitrogen gas was used instead of oxygen gas. Then, the crystal substrate of the laminated structure, the single crystal film of crystalline metal nitride, and the conductive film were each measured using an X-ray diffraction apparatus. FIG. 17 shows the XPS measurement results. As is clear from FIG. 17, a (Hf, Zr)N film and a Pt single crystal film having good crystallinity were formed on the Si crystal substrate. In addition, when measured by a four-terminal method, the obtained single crystal film of crystalline metal nitride had good conductivity.

The vapor deposition film forming apparatus used in Example 1 is shown in FIG. The film forming apparatus in FIG. 18 includes metal sources 101a to 101b, earths 102a to 102h, ICP electrodes 103a to 103b, cut filters 104a to 104b, DC power supplies 105a to 105b, RF power supplies 106a to 106b, lamps 107a to 107b, It includes at least an Ar source 108, a reactive gas source 109, a power source 110, a substrate holder 111, a substrate 112, a cut filter 113, an ICP ring 114, a vacuum chamber 115, and a rotating shaft 116. Note that the ICP electrodes 103a to 103b in FIG. 18 have a substantially concave curved shape or a parabolic shape curved toward the center of the substrate 112.

As shown in FIG. 18, the substrate 112 is locked onto the substrate holder 111. Next, the rotating shaft 116 is rotated using the power source 110 and a rotating mechanism (not shown), and the substrate 112 is rotated. Further, the substrate 112 is heated by lamps 107a to 107b, and the inside of the vacuum chamber 115 is evacuated to a vacuum or reduced pressure by a vacuum pump (not shown). After that, Ar gas is introduced into the vacuum chamber 115 from the Ar source 108, and the substrate is The surface of the substrate 112 is cleaned by forming argon plasma on the substrate 112 .

Ar gas is introduced into the vacuum chamber 115, and a reactive gas is also introduced using the reactive gas source 109. At this time, the lamps 107a to 107b, which are lamp heaters, are alternately turned on and off to form a crystal growth film of better quality.

STEM analysis was performed on the laminated structure obtained in the same manner as in Example 1. The results are shown in Figures 19-21. It can be seen from FIG. 19 that a buried layer 1004 is formed between the crystal substrate 1011 and the epitaxial layer 1001, and furthermore, amorphous layers 1002 and 1003 are formed. Further, from FIG. 20, it can be seen that the first amorphous layer 1002 on the crystal substrate 1011 contains Si of the crystal substrate and Zr which is a constituent metal of the epitaxial layer 1001. Furthermore, it can be seen that the second amorphous layer contains Si of the crystal substrate and Hf and Zr, which are the constituent metals of the epitaxial layer 1001. Further, from FIG. 21, it can be seen that the buried layer 1004 has a substantially inverted triangular cross-sectional shape and is an oxide containing Hf and Si.

(Application example)
An example of peeling/transfer, which is one of the preferred application examples of the obtained laminated structure, will be explained in more detail below using the drawings, but the present invention is not limited to these application examples. do not have. In the present invention, unless otherwise specified, an SOI substrate, an SOI semiconductor device, or the like can be manufactured from the laminated structure using known means.

FIG. 1 is a diagram showing a preferred example of the laminated structure of the present invention. In the stacked structure shown in FIG. 1, an insulating film 3 is formed on a crystal substrate 1, and a semiconductor layer is further formed as a second epitaxial layer 4 on the insulating film 3.

FIG. 2 shows a laminated structure obtained in the SOI island forming step in the peeling/transferring process. In the SOI island forming step, the stacked structure shown in FIG. 1 is used as an SOI substrate, and photolithography is performed to partially remove the semiconductor layer (second epitaxial layer) 4. By doing so, the laminated structure shown in FIG. 2 is obtained. In the stacked structure shown in FIG. 2, the second epitaxial layer is separated into two islands, and the first island 4a and the second island 4b of the second epitaxial layer are formed on the insulating film 3. There is.

FIG. 3 shows a laminated structure obtained by the HF etching process in the peeling/transferring process. In the HF etching step, the BOX layer is etched using HF using the stacked structure shown in FIG. 2, and is left in a pillar shape. In the laminated structure shown in FIG. 3, the insulating film has a pillar shape, and the first pillar 3a and the second pillar 3b of the insulating film (first epitaxial layer) are formed on the crystal substrate 1, respectively. There is. In addition, in the present invention, the adhesion between the crystal substrate and the insulating film is high, and stress relaxation such as normal transformation is observed at the interface between the insulating film and the second epitaxial layer, so it is easy to peel off, for example, The HF etching process is not essential and can be omitted.

FIG. 4 shows a laminated structure obtained in the step of attaching to a flexible substrate in the peeling/transferring process. In the pasting step, the surface of the SOI layer and a flexible substrate 5 such as PE (polyethylene) are closely pasted using the laminated structure shown in FIG. 3 .

FIG. 5 shows a laminated structure obtained in the peeling step in peeling/transfer. In the peeling step, the SOI layer is peeled and transferred onto the flexible substrate. By doing so, it is possible to improve the transfer success rate, increase the yield in device manufacturing, and achieve higher quality and lower costs.

The laminated structure of the present invention is suitably used as an SOI substrate and an SOI semiconductor device.

1 Crystal substrate 2 Oxide film 3 Insulating film (first epitaxial layer)
3a first pillar of first epitaxial layer 3b second pillar of first epitaxial layer 4 second epitaxial layer 4a first island of second epitaxial layer 4b second island of second epitaxial layer 5 Flexible substrate 13 Insulating film 14 Conductive film 21 Gate electrode 22 Emitter electrode 23 Collector electrode 24 Drain electrode 25 Source electrode 26 Insulating film 26a Insulating film (epitaxial layer)
27 p-type semiconductor 28 n-type semiconductor 28a n ^- type semiconductor 29 crystal substrate 30 trench isolation 31 polysilicon 101a-101b metal source 102a-102j ground 103a-103b ICP electrode 104a-104b cut filter 105a-105b DC power supply 106a-10 6b RF Power Supply 107a to 107B Lamp 108 AR Source 109 Reactive Gas Source 110 Power Source 11111 Base Plate Holder 113 Cut Filter 113 Cut Filter 114 ICP Ring 115 Full tank 116 Flip axis 1001 Epitaxial layer 1002 1st Amorphus layer 1003, 2nd Amolfus layer of Amolfas layer 1004 buried Including layer 1011 board

Claims (23)

A method for manufacturing a laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystal substrate, the method comprising: providing a compound element supply sacrificial layer containing a compound element on the crystal substrate; A method for manufacturing a laminated structure, comprising the step of forming the insulating layer using a compound element. 2. The manufacturing method according to claim 1, wherein after using the compound element, a compound element gas is introduced to form the insulating layer in the presence of the compound element gas. 3. The manufacturing method according to claim 1, wherein the lamination is performed by vapor deposition or sputtering. 4. The manufacturing method according to claim 1, wherein the compound element supply sacrificial layer is an oxide film provided on the crystal substrate. A laminated structure in which an insulating layer is laminated on a crystal substrate, wherein the insulating layer incorporates oxygen atoms in a compound element supply sacrificial layer containing a compound element provided on the crystal substrate. A laminated structure featuring: The laminated structure according to claim 5, wherein the crystal substrate is a crystalline Si substrate. The laminated structure according to claim 5 or 6, wherein the compound element supply sacrificial layer includes a compound film. The laminated structure according to claim 7, wherein the compound film has a thickness of more than 1 nm and less than 100 nm. The laminated structure according to claim 5, wherein the insulating layer is an epitaxial film containing a crystalline compound. A laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystal substrate, and a crystalline conductive film or a semiconductor film is further laminated on the insulating layer, wherein the insulating layer is laminated on the crystal substrate. A laminated structure characterized in that a compound element in a compound element supply sacrificial layer containing a compound element is incorporated. The laminated structure according to claim 5, comprising an SOI substrate in which a semiconductor film is laminated on the insulating layer. The laminated structure according to claim 5, comprising an electrode substrate having a crystalline conductive film laminated on the insulating layer. A semiconductor device comprising a laminated structure, wherein the laminated structure is the laminated structure according to any one of claims 5 to 12. 14. The semiconductor device according to claim 13, comprising a horizontal device. A method for manufacturing a semiconductor device using a laminated structure, the laminated structure being the laminated structure according to any one of claims 5 to 12. A system including a semiconductor device, wherein the semiconductor device is the semiconductor device according to claim 13 or 14. Between the crystal substrate and the epitaxial film, an amorphous thin film containing a constituent metal of the epitaxial film and/or the crystal substrate and a compound element of the crystalline compound and/or 1 or 2 on a part of the crystal substrate. 10. The laminated structure according to claim 9, further comprising a buried layer containing the constituent metal and the compound element. Between the crystal substrate and the epitaxial film, one or more amorphous thin films containing the constituent metals of the epitaxial film and the compound element and/or one or more of the crystal substrates are embedded. 18. The laminated structure according to claim 17, further comprising a buried layer containing a constituent metal and the compound element. between the crystal substrate and the epitaxial film, an amorphous thin film containing a constituent metal of the epitaxial film and/or the crystal substrate and the compound element; and one or more amorphous thin films embedded in a part of the crystal substrate. The laminated structure according to claim 17, further comprising a buried layer containing the constituent metal and the compound element. The laminated structure according to any one of claims 17 to 19, wherein the constituent metal contains Hf. The laminated structure according to any one of claims 17 to 20, wherein the amorphous thin film has a thickness of 1 nm to 10 nm. The laminated structure according to any one of claims 17 to 21, wherein the buried layer has a substantially inverted triangular cross-sectional shape. An electronic device, electronic device, or system comprising a laminated structure, wherein the laminated structure is the laminated structure according to any one of claims 17 to 22. .