JP2023113477A - Substrate processing device - Google Patents

Abstract

To improve in-plane uniformity of substrate processing.SOLUTION: A substrate processing device includes a substrate holder, a discharge nozzle, and an exhaust nozzle. The substrate holder holds a plurality of substrates at intervals in a vertical direction. The discharge nozzle is disposed on a side of the substrate holder and discharges gas in a direction different from a direction toward the plurality of substrates held by the substrate holder. The exhaust nozzle is disposed on an opposite side to the discharge nozzle across the substrate holder and exhausts the gas discharged from the discharge nozzle.SELECTED DRAWING: Figure 1

Description

The present invention relates to a substrate processing apparatus.

2. Description of the Related Art Batch-type substrate processing apparatuses are known that collectively perform substrate processing such as etching processing and film forming processing on a plurality of substrates. In such a substrate processing apparatus, for example, a plurality of substrates are held at intervals in the vertical direction by a substrate holder, and gas is discharged toward the plurality of substrates from discharge nozzles arranged on the side of the substrate holder. , the substrate is processed according to the gas. Gas ejected from the ejection nozzle is exhausted from an exhaust nozzle arranged on the opposite side of the substrate holder from the ejection nozzle.

JP-A-3-255618

By the way, in a substrate processing apparatus that discharges gas from a discharge nozzle toward a plurality of substrates, there is a problem that in-plane uniformity of substrate processing is impaired. That is, when the gas is discharged from the discharge nozzle toward a plurality of substrates, the flow velocity of the gas increases in the vicinity of the outer peripheral portion facing the discharge nozzle of each substrate compared to the central portion of each substrate. In this way, the non-uniform flow velocity of the gas within the surface of each substrate may reduce the in-plane uniformity of the substrate processing.

The disclosed technique has been made in view of the above, and an object thereof is to provide a substrate processing apparatus capable of improving in-plane uniformity of substrate processing.

A substrate processing apparatus disclosed in the present application, in one aspect, has a substrate holder, an ejection nozzle, and an exhaust nozzle. The substrate holder holds a plurality of substrates at intervals in the vertical direction. The discharge nozzle is arranged on the side of the substrate holder and discharges gas in a direction different from the direction toward the plurality of substrates held by the substrate holder. The exhaust nozzle is arranged on the side opposite to the ejection nozzle with the substrate holder interposed therebetween, and exhausts the gas ejected from the ejection nozzle.

According to one aspect of the substrate processing apparatus disclosed in the present application, it is possible to improve the in-plane uniformity of substrate processing.

FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus according to the first embodiment. FIG. 2 is a schematic plan view of an ejection nozzle and an exhaust nozzle. FIG. 3 is a diagram showing an example of a simulation result of gas flow velocity distribution in the substrate processing apparatus according to the first embodiment. FIG. 4 is a diagram showing an example of the configuration of a substrate processing apparatus according to the second embodiment. FIG. 5 is a diagram showing an example of the configuration of a substrate processing apparatus according to the third embodiment.

An embodiment of a substrate processing apparatus disclosed in the present application will be described in detail below with reference to the drawings. Note that the disclosed technology is not limited by this embodiment. Further, each embodiment can be appropriately combined within a range that does not contradict the processing contents. Also, in each of the following embodiments, the same parts are denoted by the same reference numerals, and overlapping descriptions are omitted.

(First embodiment)
[Configuration of substrate processing apparatus]
FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus 100 according to the first embodiment. As shown in FIG. 1, the substrate processing apparatus 100 is a batch-type substrate processing apparatus capable of collectively performing substrate processing such as etching and film formation on a plurality of substrates W such as semiconductor wafers. configured as

The substrate processing apparatus 100 has a heating furnace 110 . The heating furnace 110 has a cover member 111 and a heater 112 . The cover member 111 is a tubular member having a ceiling. The heater 112 is provided on the inner peripheral surface of the cover member 111 .

A processing container 120 made of, for example, quartz is arranged in the heating furnace 110 . The heater 112 is provided so as to surround the processing container 120 .

A wafer boat (an example of a substrate holder) 130 is arranged inside the processing container 120 . The wafer boat 130 is made of quartz, for example. The wafer boat 130 holds a plurality of substrates W at intervals in the vertical direction. The wafer boat 130 can be moved into and out of the processing container 120 by being lifted by a lifting mechanism (not shown). Also, the wafer boat 130 can be rotated within the processing container 120 by a rotation mechanism (not shown).

A discharge nozzle 140 is arranged on the side of the wafer boat 130 . The discharge nozzle 140 is made of quartz, for example, penetrates through the bottom of the cover member 111 , and extends upward inside the processing container 120 along the inner wall surface of the processing container 120 . The discharge nozzle 140 has a plurality of discharge ports 141 arranged side by side at intervals in the vertical direction at positions not facing the plurality of substrates W on the side surface. The diameters of the plurality of ejection ports 141 are the same. The interval between the discharge ports 141 is set to be the same as the interval between the plurality of substrates W held in the wafer boat 130, for example. The height position of each discharge port 141 in the vertical direction is set, for example, such that each discharge port 141 is positioned between substrates W adjacent to each other in the vertical direction. The ejection nozzle 140 ejects gas from the plurality of ejection ports 141 in a direction different from the direction toward the plurality of substrates W held in the wafer boat 130 .

An exhaust nozzle 150 is arranged on the opposite side of the discharge nozzle 140 across the wafer boat 130 . The exhaust nozzle 150 is made of, for example, quartz, penetrates through the bottom of the cover member 111 , and extends upward along the inner wall surface of the processing container 120 inside the processing container 120 . The exhaust nozzle 150 has a plurality of exhaust ports 151 arranged side by side at intervals in the vertical direction at positions facing the plurality of substrates W on the side surface. The exhaust nozzle 150 exhausts gas discharged from the discharge nozzle 140 .

If the ejection nozzle 140 ejects gas toward a plurality of substrates W, the flow velocity of the gas increases in the vicinity of the outer periphery facing the ejection nozzle 140 of each substrate W compared to the central portion of each substrate W, The flow velocity of the gas becomes uneven within the surface of each substrate W. This may reduce the in-plane uniformity of substrate processing.

On the other hand, the discharge nozzle 140 discharges the gas in a direction different from the direction toward the plurality of substrates W, so that the flow velocity of the gas locally increases in the vicinity of the outer periphery facing the discharge nozzle 140 of each substrate W. You can prevent it from happening. Therefore, according to the substrate processing apparatus 100 according to the first embodiment, compared with a substrate processing apparatus that discharges gas from the discharge nozzle 140 toward a plurality of substrates W, for example, the flow velocity of the gas in the plane of each substrate W increases. Non-uniformity can be suppressed. As a result, the substrate processing apparatus 100 according to the first embodiment can improve the in-plane uniformity of substrate processing.

A gas supply mechanism 160 is connected to the ejection nozzle 140 to introduce a gas such as an etching gas or a film forming source gas into the ejection nozzle 140 . The gas supply mechanism 160 includes a gas supply source 161 and a gas pipe 162 that guides gas from the gas supply source 161 to the discharge nozzle 140 . The gas pipe 162 is provided with a flow rate controller 163 and an on-off valve 164 .

An exhaust pipe 171 is connected to the exhaust nozzle 150 , and an exhaust device 173 is connected to the exhaust pipe 171 via a pressure regulating valve 172 . The exhaust device 173 exhausts the gas inside the processing container 120 through the exhaust nozzle 150 and the exhaust pipe 171 .

[Structure of Discharge Nozzle and Exhaust Nozzle]
Here, the structure of the discharge nozzle 140 and the exhaust nozzle 150 will be further described with reference to FIG. FIG. 2 is a schematic plan view of the ejection nozzle 140 and the exhaust nozzle 150. FIG. FIG. 2 shows a plurality of substrates W held by the wafer boat 130 together with the discharge nozzle 140 and the exhaust nozzle 150. As shown in FIG. As described above, the discharge nozzle 140 is arranged on the side of the wafer boat 130 , and the exhaust nozzle 150 is arranged on the opposite side of the wafer boat 130 from the discharge nozzle 140 .

A plurality of ejection ports 141 (see FIG. 1) are arranged side by side at intervals in the vertical direction at positions not facing the plurality of substrates W on the side surface of the ejection nozzle 140 . Specifically, as shown in FIG. 2, for example, the ejection port 141 has an angle θ1 of 90° _or more with respect to a direction D1 from the central axis of the ejection nozzle 140 to the central axis of the substrate W in the side surface of the ejection nozzle 140. It is arranged at a position corresponding to a direction that is 270° or less. In this embodiment, the ejection port 141 is arranged in the side surface of the ejection nozzle 140 in a direction where the angle _θ1 is 180° (that is, the direction D1 from the central axis of the ejection nozzle 140 to the central axis of the substrate W). direction).

By arranging the plurality of ejection ports 141 at positions not facing the plurality of substrates W on the side surface of the ejection nozzle 140, gas can be efficiently discharged from the plurality of ejection ports 141 in a direction different from the direction toward the plurality of substrates W. can be discharged.

A plurality of exhaust ports 151 (see FIG. 1) are arranged side by side at intervals in the vertical direction at positions facing the plurality of substrates W on the side surface of the exhaust nozzle 150 . Specifically, as shown in FIG. 2, for example, the exhaust port 151 has an angle θ2 of -90 or more with respect to a direction _D2 from the central axis of the exhaust nozzle 150 to the central axis of the substrate W, among the side surfaces of the exhaust nozzle 150. It is arranged at a position corresponding to a direction that is less than or equal to 90°. In the present embodiment, the exhaust port 151 corresponds to the side surface of the exhaust nozzle 150 in which the angle _θ2 is 0° (that is, the direction D2 from the central axis of the exhaust nozzle 150 to the central axis of the substrate W). It is placed in the position where

By arranging the plurality of exhaust ports 151 at positions facing the plurality of substrates W on the side surface of the exhaust nozzle 150 , the gas ejected from the plurality of ejection ports 141 and passing through the space between the substrates W is discharged through the plurality of exhaust ports 151 . can be efficiently exhausted from

As shown in FIGS. 1 and 2, the plurality of exhaust ports 151 correspond one-to-one with the plurality of discharge ports 141 and have the same diameter. By doing so, the gas is efficiently discharged from the plurality of discharge ports 141 in a direction different from the direction toward the plurality of substrates W, and the gas discharged from the plurality of discharge ports 141 passes through the space between the substrates W. The discharged gas can be efficiently exhausted from the plurality of exhaust ports 151 .

[simulation result]
Next, with reference to FIG. 3, a simulation result of gas flow velocity distribution in the substrate processing apparatus 100 according to the first embodiment will be described. FIG. 3 is a diagram showing an example of a simulation result of gas flow velocity distribution in the substrate processing apparatus 100 according to the first embodiment. The horizontal axis of FIG. 3 indicates the position [mm] in the radial direction with the center position of the substrate W as a reference. The vertical axis in FIG. 3 indicates the gas flow velocity [m/s] in a plane parallel to the surface of the substrate W passing through the middle position between the substrates W adjacent in the vertical direction. That is, FIG. 3 shows the gas flow velocity distribution from the position of "-150 mm" to the position of "+150 mm" of the substrate W, with the center position of the substrate W being "0". The position of "+150 mm" of the substrate W is the position of the outer periphery facing the discharge nozzle 140 of the substrate W, and the position of "-150 mm" of the substrate W is the position of the outer periphery of the substrate W facing the exhaust nozzle 150. is.

Further, in FIG. 3, Example 1 is a case of simulating the substrate processing apparatus 100 according to the first embodiment. Comparative Example 1 is a case where a substrate processing apparatus provided with ejection nozzles for ejecting gas toward a plurality of substrates W is simulated.

As shown in FIG. 3, in Comparative Example 1, the flow velocity is the highest near the position of "+100 mm" of the substrate W, which is near the outer peripheral portion facing the discharge nozzle 140, and the flow velocity of the gas toward the position of "-100 mm". gradually decreases, resulting in a tapered distribution. On the other hand, in Example 1, the flow velocity has a substantially uniform distribution from the center position of the substrate W to the outer peripheral portion. That is, in the first embodiment, the gas flow velocity is tapered from the center position to the outer periphery of the substrate W by using the discharge nozzle 140 that discharges the gas in a direction different from the direction toward the substrates W. A nearly uniform distribution of flow velocity can be achieved. That is, in Example 1, non-uniformity in the flow velocity of the gas within the surface of the substrate W can be suppressed. As a result, the substrate processing apparatus 100 according to the first embodiment can improve the in-plane uniformity of substrate processing.

(Second embodiment)
Next, the configuration of the substrate processing apparatus according to the second embodiment will be described with reference to FIG. FIG. 4 is a diagram showing an example of the configuration of a substrate processing apparatus according to the second embodiment.

As shown in FIG. 4, a discharge nozzle 140A is arranged on the side of the wafer boat 130 of the substrate processing apparatus 100A according to the second embodiment. The discharge nozzle 140A has a plurality of discharge ports 141A arranged side by side at intervals in the vertical direction at positions not facing the plurality of substrates W on the side surface. The diameter of the plurality of discharge ports 141A increases as the height position in the vertical direction increases.

In this way, by increasing the diameter of the plurality of discharge ports 141A as the height position in the vertical direction increases, the difference in gas discharge pressure caused by the difference in the height position of the plurality of discharge ports 141A can be reduced. can be done. Therefore, non-uniformity in the flow velocity of the gas between the surfaces of the plurality of substrates W can be suppressed, so that the uniformity of the substrate processing can be improved.

An exhaust nozzle 150A is arranged on the opposite side of the wafer boat 130 from the discharge nozzle 140A. The exhaust nozzle 150A has a plurality of exhaust ports 151A arranged side by side at intervals in the vertical direction at positions facing the plurality of substrates W on the side surface. The diameter of the plurality of exhaust ports 151A increases as the height position in the vertical direction increases.

In this way, by increasing the diameter of the plurality of exhaust ports 151A as the height position in the vertical direction increases, the difference in gas exhaust pressure caused by the difference in the height position of the plurality of exhaust ports 151A can be reduced. can be done. Therefore, non-uniformity in the flow velocity of the gas between the surfaces of the plurality of substrates W can be suppressed, so that the uniformity of the substrate processing can be improved.

(Third embodiment)
Next, the configuration of the substrate processing apparatus according to the third embodiment will be described with reference to FIG. FIG. 5 is a diagram showing an example of the configuration of a substrate processing apparatus according to the third embodiment.

As shown in FIG. 5, an exhaust nozzle 150B is arranged on the opposite side of the discharge nozzle 140 across the wafer boat 130 of the substrate processing apparatus 100B according to the third embodiment. The exhaust nozzle 150B has a plurality of exhaust ports 151B arranged side by side at intervals in the vertical direction at positions not facing the plurality of substrates W on the side surface. Specifically, the exhaust port 151B has an angle _θ2 of 90° or more and 270° or less with respect to the direction D2 (see FIG. 2) from the central axis of the exhaust nozzle 150B toward the central axis of the substrate W, among the side surfaces of the exhaust nozzle 150B. is placed at a position corresponding to a certain direction. In the present embodiment, the exhaust port 151B is arranged in the side surface of the exhaust nozzle 150B in a direction where the angle _θ2 is 180° (that is, the direction D2 from the central axis of the exhaust nozzle 150B to the central axis of the substrate W). direction).

By arranging the plurality of exhaust ports 151B at positions facing the plurality of substrates W on the side surface of the exhaust nozzle 150B, the flow velocity of the gas near the outer peripheral portion of each substrate W facing the exhaust nozzle 150B is locally increased. It can be suppressed. As a result, non-uniformity in gas flow velocity within the surface of each substrate W can be further suppressed.

As described above, the substrate processing apparatuses (eg, substrate processing apparatuses 100, 100A, 100B) according to the embodiments include substrate holders (eg, wafer boat 130) and discharge nozzles (eg, discharge nozzles 140, 140A). , and exhaust nozzles (eg, exhaust nozzles 150, 150A, 150B). The substrate holder holds a plurality of substrates (for example, substrates W) at intervals in the vertical direction. The discharge nozzle is arranged on the side of the substrate holder and discharges gas in a direction different from the direction toward the plurality of substrates held by the substrate holder. The exhaust nozzle is arranged on the side opposite to the ejection nozzle with the substrate holder interposed therebetween, and exhausts the gas ejected from the ejection nozzle. As a result, the substrate processing apparatus according to the embodiment can improve the in-plane uniformity of substrate processing.

Further, the ejection nozzle may have a plurality of ejection openings (for example, ejection openings 141 and 141A) arranged side by side at intervals in the vertical direction at positions not facing the plurality of substrates on the side surface. The discharge nozzle may discharge gas from the plurality of discharge ports in a direction different from the direction toward the plurality of substrates held by the substrate holder. As a result, according to the substrate processing apparatus of the embodiment, the gas can be efficiently discharged from the plurality of discharge ports in a direction different from the direction toward the plurality of substrates.

Moreover, the diameter of the plurality of ejection ports (for example, the ejection port 141A) may increase as the height position in the vertical direction increases. Thus, according to the substrate processing apparatus according to the embodiment, it is possible to suppress non-uniformity in gas flow velocity between the surfaces of a plurality of substrates, thereby improving the inter-surface uniformity of substrate processing.

Further, the exhaust nozzle may have a plurality of exhaust ports (for example, exhaust ports 151 and 151A) arranged side by side at intervals in the vertical direction at positions facing the plurality of substrates on the side surface. The exhaust nozzle may exhaust the gas discharged from the plurality of discharge ports from the plurality of discharge ports. As a result, according to the substrate processing apparatus according to the embodiment, the gas discharged from the plurality of discharge ports and having passed through the space between the substrates can be efficiently exhausted from the plurality of exhaust ports.

In addition, the exhaust nozzle may have a plurality of exhaust ports (for example, exhaust port 151B) arranged side by side at intervals in the vertical direction at positions not facing the plurality of substrates on the side surface. The exhaust nozzle may exhaust the gas discharged from the plurality of discharge ports from the plurality of discharge ports. Thereby, according to the substrate processing apparatus according to the embodiment, it is possible to further suppress non-uniformity in the flow velocity of the gas within the surface of each substrate.

Further, the diameters of the plurality of exhaust ports may increase as the height position in the vertical direction increases. Thus, according to the substrate processing apparatus according to the embodiment, it is possible to suppress non-uniformity in gas flow velocity between the surfaces of a plurality of substrates, thereby improving the inter-surface uniformity of substrate processing.

Also, the plurality of exhaust ports may correspond to the plurality of ejection ports one-to-one and may have the same diameter. As a result, according to the substrate processing apparatus according to the embodiment, the gas is efficiently discharged from the plurality of discharge ports in a direction different from the direction toward the plurality of substrates, and the gas is discharged from the plurality of discharge ports and between the substrates. Gas that has passed through the space can be efficiently exhausted from the plurality of exhaust ports.

100, 100A, 100B Substrate processing apparatus 130 Wafer boat 140, 140A Discharge nozzles 141, 141A Discharge ports 150, 150A, 150B Exhaust nozzles 151, 151A, 151B Exhaust ports

Claims (7)

a substrate holder that holds a plurality of substrates at intervals in the vertical direction;
a discharge nozzle disposed on the side of the substrate holder for discharging gas in a direction different from the direction toward the plurality of substrates held by the substrate holder;
and an exhaust nozzle arranged opposite to the ejection nozzle with the substrate holder interposed therebetween for exhausting the gas ejected from the ejection nozzle. The ejection nozzle is
The direction toward the plurality of substrates held by the substrate holder, which has a plurality of ejection ports arranged side by side at intervals in the vertical direction at positions not opposed to the plurality of substrates on the side surface 2. The substrate processing apparatus according to claim 1, wherein the gas is discharged from the plurality of discharge ports in different directions. The plurality of ejection ports are
The substrate processing apparatus according to claim 2, wherein the diameter increases as the height position in the vertical direction increases. The exhaust nozzle is
a plurality of exhaust ports arranged side by side at intervals in the vertical direction at positions facing the plurality of substrates on the side surface; 3. The substrate processing apparatus according to claim 2, wherein the substrate is exhausted. The exhaust nozzle is
a plurality of exhaust ports arranged side by side at intervals in the vertical direction at positions not facing the plurality of substrates on the side surface; 3. The substrate processing apparatus according to claim 2, wherein the air is exhausted from. The plurality of exhaust ports are
The substrate processing apparatus according to claim 4 or 5, wherein the diameter increases as the height position in the vertical direction increases. The plurality of exhaust ports are
The substrate processing apparatus according to any one of claims 4 to 6, wherein the plurality of outlets correspond one-to-one and have the same diameter.

Images