JP2023109636A - Wire grid polarization element, method for manufacturing the same, and optical apparatus - Google Patents

Abstract

To provide a wire grid polarization element with an increased resistance to heat.SOLUTION: A wire grid polarization element 10 includes: a transparent substrate 11; and a lattice protruding part 12 arranged in one surface of the transparent substrate 11 at a pitch p smaller than the wavelength of light in a used band and extending in a Y-direction. The lattice protruding unit 12 sequentially includes a reflection layer 12a, a dielectric layer 12b, and an absorption layer 12c in descending order of the nearness to the transparent substrate 11. The reflection layer 12a includes an AlNd alloy.SELECTED DRAWING: Figure 1

Description

The present invention relates to a wire grid polarizing element, a manufacturing method thereof, and an optical apparatus.

A polarizing element is an optical element that absorbs polarized light in a predetermined direction and transmits polarized light in a direction orthogonal thereto. In principle, a liquid crystal display device requires a polarizing element. In particular, in a liquid crystal display device that uses a light source with a large amount of light, such as a transmissive liquid crystal projector, the polarizing element receives strong radiation, so heat resistance and light resistance are required. , high extinction ratio and control of reflectance properties are required. Wire grid polarizers have been proposed to meet these demands.

The wire grid polarizing elements are arranged on a transparent substrate and on one side of the transparent substrate at a pitch (several tens of nm or more and several hundred nm or less) shorter than the wavelength of light in the band of use, and extend in a predetermined direction. and a grid-like projection. Here, the grid-shaped convex portion has a reflective layer, a dielectric layer, and an absorbing layer in order from the transparent substrate side. When light is incident on this element, s-polarized light (TE wave (s wave)) having an electric field component parallel to the extending direction of the grid-like protrusions cannot be transmitted. P-polarized light (TM waves (p-waves)) with an electric field component perpendicular to is transmitted.

A wire grid polarizing element is excellent in heat resistance and light resistance, can be made into a relatively large element, and has a high extinction ratio. In addition, the multi-layer structure makes it possible to control the reflectance characteristics, and reduces the deterioration of image quality caused by ghosts, etc., which are caused by the return light reflected on the surface of the element and reflected again inside the device. Suitable for

With the recent increase in brightness of liquid crystal projectors, wire grid polarizing elements are required to have high heat resistance. In a wire grid polarizing element, there is a concern that the grid-like projections may deteriorate in a high-temperature environment, resulting in deterioration of the polarizing properties.

In Patent Document 1, a compound of Al and Au, B, Ce, Cr, Mo, Nb, Nd, Ni, Pt, Sc, Ta, Ti, or W can be used as a material constituting the reflective layer. Are listed.

JP 2021-36315 A

However, the heat resistance of wire grid polarizers is insufficient.

An object of the present invention is to provide a wire grid polarizing element capable of improving heat resistance.

According to one aspect of the present invention, in a wire grid polarizing element, a transparent substrate is arranged on one surface of the transparent substrate at a pitch shorter than the wavelength of light in a use band, and extends in a predetermined direction. a lattice-like convex portion, the lattice-like convex portion having, in order from the transparent substrate side, a reflective layer, a dielectric layer, and an absorbing layer; and the reflective layer includes an AlNd alloy. .

The AlNd alloy may have a Nd content of 0.2 atomic % or more.

The transparent substrate is transparent to light in the used band and may include glass, crystal, quartz or sapphire.

The dielectric layer may include Si oxide, Ti oxide, Zr oxide, Al oxide, Nb oxide or Ta oxide.

The absorption layer absorbs light in the working band and may comprise a metal, alloy or semiconductor.

The wire grid polarizing element may further include an antireflection layer on the other surface of the transparent substrate.

At least part of the surface of the wire grid polarizing element may be covered with a protective film. In this case, the protective film may contain the same material as the material contained in the dielectric layer.

At least part of the surface of the wire grid polarizing element may be covered with an organic water-repellent film.

Another aspect of the present invention is a method for manufacturing a wire grid polarizing element, in which a reflective layer, a dielectric layer, and an absorbing layer are laminated on one surface of a transparent substrate in this order from the transparent substrate side. a step of forming a laminate, and selectively etching the laminate to form grid-like projections arranged at a pitch shorter than the wavelength of light in the operating band and extending in a predetermined direction. and the reflective layer comprises an AlNd alloy.

The AlNd alloy may have a Nd content of 0.2 atomic % or more.

The above method for manufacturing a wire grid polarizing element may further include forming an antireflection layer on the other surface of the transparent substrate.

The method for manufacturing the wire grid polarizing element described above may further include the step of covering at least part of the surface with a protective film. In this case, the protective film may contain the same material as the material contained in the dielectric layer.

The method for manufacturing the wire grid polarizer may further include the step of covering at least a portion of the surface with an organic water-repellent film.

According to another aspect of the present invention, there is provided an optical instrument including the wire grid polarizing element described above.

ADVANTAGE OF THE INVENTION According to this invention, the wire-grid polarizing element which can improve heat resistance can be provided.

It is a cross-sectional schematic diagram which shows an example of the wire grid polarizing element of this embodiment. It is a cross-sectional schematic diagram which shows the structure of the test piece of an Example. 1 is a micrograph of the surface of a reflective layer before and after heat resistance test 1 in an example. 10 is a graph showing the relationship between the amount of change in the n-polarized light reflectance of the reflective layer and the heating time in heat resistance test 1 in Examples. 10 is a graph showing the relationship between the rate of change in contrast of the wire grid polarizing element and the heating time in heat resistance test 2 in Examples. 10 is a graph showing the relationship between the rate of change in contrast of the wire grid polarizing element and the heating time in heat resistance test 3 in Examples.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[Wire grid polarizer]
FIG. 1 shows an example of the wire grid polarization element of this embodiment.

The wire grid polarizing elements 10 are arranged on a transparent substrate 11 and one surface of the transparent substrate 11 at a pitch p shorter than the wavelength of light in the operating band, and extend in the Y-axis direction with a width w , and a grid-like projection 12 having a height h.

Here, as shown in FIG. 1, the direction in which the grid-shaped convex portions 12 extend is called the Y-axis direction. Further, the direction orthogonal to the Y-axis direction and in which the grid-like protrusions 12 are arranged at the pitch p along the main surface of the transparent substrate 11 is referred to as the X-axis direction. Further, the direction perpendicular to the Y-axis direction and the X-axis direction and perpendicular to the main surface of the transparent substrate 11 is referred to as the Z-axis direction. The light incident on the wire grid polarizing element 10 may enter from either side of the transparent substrate 11. However, on the side (grid surface side) of the transparent substrate 11 on which the lattice-shaped convex portions 12 are formed, Z Axial incidence is preferred.

The wire grid polarizing element 10 utilizes the four effects of transmission, reflection, interference, and selective light absorption of polarized light due to optical anisotropy to produce s-polarized light (TE wave ( s-wave))) and transmits p-polarized light (TM wave (p-wave)) having an electric field component parallel to the X-axis direction. Therefore, in FIG. 1 , the Y-axis direction is the direction of the absorption axis of the wire grid polarizing element 10 and the X-axis direction is the direction of the transmission axis of the wire grid polarizing element 10 .

Here, the height h means the dimension in the Z-axis direction perpendicular to the main surface of the transparent substrate 11 . Also, the width w means the dimension in the X-axis direction perpendicular to the height h when the wire grid polarizing element 10 is viewed from the Y-axis direction. Furthermore, the pitch p is the repetition interval of the grid-like convex portions 12 in the X-axis direction when the wire grid polarization element 10 is viewed from the Y-axis direction.

The pitch p is not particularly limited as long as it is shorter than the wavelength of light in the used band, but from the viewpoint of the ease and stability of manufacturing the wire grid polarizing element 10, it is preferably 100 nm or more and 200 nm or less. The pitch p can be measured by observation using a scanning electron microscope or a transmission electron microscope. For example, a scanning electron microscope or a transmission electron microscope can be used to measure the pitch p at any four locations, and the arithmetic average value can be taken as the pitch p. This measuring method is hereinafter referred to as electron microscopy.

As shown in FIG. 1, the lattice-shaped convex portion 12 has, in order from the transparent substrate 11 side, a reflective layer 12a, a dielectric layer 12b, and an absorbing layer 12c. The grid-like protrusions 12 have a wire grid structure arranged in a one-dimensional grid pattern on one surface of the transparent substrate 11 .

The light incident from the side of the transparent substrate 11 on which the grid-like projections 12 are formed (grid surface side) is partially absorbed and attenuated when passing through the absorption layer 12c and the dielectric layer 12b. Of the light that has passed through the absorption layer 12c and the dielectric layer 12b, p-polarized light (TM waves (p waves)) passes through the reflection layer 12a with high transmittance. On the other hand, among the light transmitted through the absorption layer 12c and the dielectric layer 12b, the s-polarized light (TE wave (s wave)) is reflected by the reflection layer 12a. The s-polarized light reflected by the reflective layer 12a is partially absorbed while passing through the dielectric layer 12b and the absorbing layer 12c, but is partially reflected back to the reflective layer 12a. Also, the s-polarized light reflected by the reflective layer 12a interferes and attenuates when passing through the dielectric layer 12b and the absorbing layer 12c. As described above, by selectively attenuating the s-polarized light, the wire grid polarizing element 10 can obtain desired polarization characteristics.

[Reflection layer]
The reflective layers 12a are arranged at a pitch p on one surface of the transparent substrate 11 and extend in the Y-axis direction. The reflective layer 12a functions as a wire grid polarizer, attenuates s-polarized light (TE wave (s wave)) having an electric field component in a direction parallel to the extending direction of the reflective layer 12a. It transmits p-polarized light (TM wave (p wave)) having an electric field component in a direction perpendicular to the extending direction.

The reflective layer 12a contains an AlNd alloy. Thereby, the heat resistance of the wire grid polarizing element 10 is improved. As a result, generation of hillocks in the reflective layer 12a in a high-temperature environment is suppressed, and deterioration in reflectance and contrast of the reflective layer 12a is suppressed.

From the viewpoint of heat resistance of the wire grid polarizing element 10, the content of Nd in the AlNd alloy is preferably 0.2 at % or more. On the other hand, from the viewpoint of the reflectance of the reflective layer 12a, the Nd content in the AlNd alloy is preferably 2.0 atomic % or less.

Although the thickness of the reflective layer 12a is not particularly limited, it is preferably 100 nm or more and 300 nm or less, for example. A method for measuring the thickness of the reflective layer 12a is not particularly limited, but for example, an electron microscope method can be used.

A method for forming the reflective layer 12a is not particularly limited, but examples thereof include a vapor deposition method, a sputtering method, and the like.

The reflective layer 12a may be a laminate of two or more layers with different Nd alloy compositions.

[Dielectric layer]
The dielectric layer 12b is formed on the reflective layer 12a. That is, the dielectric layers 12b are arranged at a pitch p and extend in the Y-axis direction.

The thickness of the dielectric layer 12b is set so that the phase of the s-polarized light transmitted through the absorbing layer 12c and reflected by the reflecting layer 12a is shifted by half a wavelength from the s-polarized light reflected by the absorbing layer 12c. Specifically, the thickness of the dielectric layer 12b is not particularly limited as long as it is possible to enhance the interference effect by adjusting the phase of s-polarized light. . A method for measuring the thickness of the dielectric layer 12b is not particularly limited, but for example, an electron microscope method can be used.

The material forming the dielectric layer 12b is not particularly limited, but examples thereof include Si oxide, Ti oxide, Zr oxide, Al oxide, Nb oxide, Ta oxide, and the like.

Preferably, the refractive index of the dielectric layer 12b is greater than 1.0 and less than or equal to 2.5. Since the optical properties of the reflective layer 12a are affected by the refractive index of the dielectric layer 12b, the optical properties of the wire grid polarizing element 10 can be controlled by selecting the material forming the dielectric layer 12b. By appropriately adjusting the thickness and refractive index of the dielectric layer 12b, the s-polarized light reflected by the reflective layer 12a can be partially reflected back to the reflective layer 12a when it passes through the absorbing layer 12c. , and the s-polarized light passing through the absorbing layer 12c can be attenuated by interference. By selectively attenuating the s-polarized light in this manner, desired polarization characteristics can be obtained.

A method for forming the dielectric layer 12b is not particularly limited, but examples thereof include a vapor deposition method, a sputtering method, a CVD (Chemical Vapor Deposition) method, an ALD (Atomic Layer Deposition) method, and the like.

In addition, the dielectric layer 12b may be a laminate of two or more layers composed of different materials.

[Absorbing layer]
Absorption layer 12c is formed on dielectric layer 12b. That is, the absorption layers 12c are arranged at a pitch p and extend in the Y-axis direction.

Although the thickness of the absorption layer 12c is not particularly limited, it is preferably 5 nm or more and 50 nm or less, for example. A method for measuring the thickness of the absorption layer 12c is not particularly limited, but for example, an electron microscope method can be used.

The material forming the absorption layer 12c is not particularly limited as long as it absorbs light in the use band, that is, the material has an extinction coefficient not equal to 0, and includes metals, alloys, semiconductors, and the like. Examples of metals include Ta, Al, Ag, Cu, Au, Mo, Cr, Ti, W, Ni, Fe, and Sn. Examples of alloys include alloys containing one or more of these metals. Examples of semiconductors include Si, Ge, Te, ZnO, and silicide materials (β-FeSi ₂ , MgSi ₂ , NiSi ₂ , BaSi ₂ , CrSi ₂ , CoSi ₂ , TaSi, etc.). Thereby, the wire grid polarizing element 10 can obtain a high extinction ratio with respect to the visible light region. Among these, the absorption layer 12c preferably contains Si while containing Fe or Ta.

When a semiconductor is used as the material for the absorption layer 12c, the bandgap energy of the semiconductor is involved in light absorption, so the bandgap energy of the semiconductor must be less than or equal to the energy of the light in the used band. For example, when the visible light band is used, it is necessary to use a semiconductor that absorbs light with a wavelength of 400 nm or more, that is, has a bandgap energy of 3.1 eV or less.

A method for forming the absorption layer 12c is not particularly limited, but examples thereof include a vapor deposition method, a sputtering method, and the like.

Note that the absorbent layer 12c may be a laminate of two or more layers made of different materials.

[Transparent substrate]
The material constituting the transparent substrate 11 is not particularly limited as long as it is transparent to light in the operating band, and can be appropriately selected according to the purpose.

In the present specification and claims, "transparent to light in the working band" does not mean that the transmittance of light in the working band is 100%, and functions as a polarizing element. It means that the transmittance of light can be maintained. The light in the use band includes, for example, visible light having a wavelength of approximately 380 nm or more and 810 nm or less.

The material forming the transparent substrate 11 is not particularly limited, but examples thereof include materials having a refractive index of 1.1 or more and 2.2 or less, such as glass, crystal, quartz, and sapphire. From the viewpoint of cost and light transmittance, quartz and glass are preferable, and quartz (refractive index: 1.46) and soda-lime glass (refractive index: 1.51) are particularly preferable. Crystal and sapphire are preferable from the viewpoint of thermal conductivity. As a result, the light resistance of the transparent substrate 11 is improved, and it can be used as a polarizing element for an optical engine of a projector that generates a large amount of heat.

When a crystal having optical activity, such as quartz or sapphire, is used as the material for the transparent substrate 11, the grid-shaped projections 12 are arranged in a direction parallel or perpendicular to the optical axis of the crystal. is preferred. This provides excellent optical properties. Here, the optical axis is a direction axis that minimizes the difference in refractive index between O (ordinary ray) and E (extraordinary ray) of light traveling in that direction.

Although the average thickness of the transparent substrate 11 is not particularly limited, it is preferably 0.3 mm or more and 1 mm or less, for example. Also, the shape of the main surface of the transparent substrate 11 is not particularly limited, but may be, for example, a rectangular shape.

[Antireflection layer]
Note that the wire grid polarizing element 10 may further include an antireflection layer on the other surface of the transparent substrate 11 .

The antireflection layer is formed on the transparent substrate 11 and is a multilayer film of two or more layers made of the same material as the dielectric layer 12b. For example, by forming an antireflection layer in which low refractive index layers and high refractive index layers having different refractive indexes are alternately laminated, light reflected at the interface can be attenuated by interference.

Although the thickness of the antireflection layer is not particularly limited, it is preferably, for example, 1 nm or more and 500 nm or less. The method for measuring the thickness of the antireflection layer is not particularly limited, but examples thereof include electron microscopy.

The antireflection layer can be formed as a high-density film by a method similar to that for the dielectric layer 12b. (Ion-beam Assisted Deposition) or IBS method (Ion Beam Sputtering) is preferably used.

[Protective film]
At least part of the surface of the wire grid polarizing element 10 may be covered with a protective film. Here, the material forming the protective film is the same as the material forming the dielectric layer 12b. This improves the durability of the wire grid polarization element 10 .

The method for forming the protective film is not particularly limited, but examples thereof include CVD method and ALD method.

It should be noted that the protective film may be a laminate of two or more layers composed of different materials, similar to the dielectric layer 12b.

[Organic water-repellent film]
At least part of the surface of the wire grid polarizing element 10 may be covered with an organic water-repellent film. This improves the moisture resistance of the wire grid polarizing element 10 .

The material forming the organic water-repellent film is not particularly limited, but examples thereof include fluorine-based silane compounds such as tridecafluorooctyltrichlorosilane (FOTS).

A method for forming the organic water-repellent film is not particularly limited, but examples thereof include CVD method and ALD method.

[Manufacturing method of wire grid polarizing element]
The wire grid polarizing element 10 is manufactured by laminating a reflective layer, a dielectric layer, and an absorbing layer on one surface of the transparent substrate 11 in this order from the transparent substrate 11 side to form a laminate. and a step of selectively etching the laminate to form grid-like projections 12 arranged at a pitch shorter than the wavelength of light in the working band and extending in a predetermined direction. include.

When selectively etching the laminate, first, a one-dimensional grid-like mask pattern is formed on the laminate using a resist by, for example, photolithography, nanoimprinting, or the like. Next, the region of the layered body where the mask pattern is not formed is etched.

The etching method is not particularly limited, but includes, for example, a dry etching method using an etching gas corresponding to the object to be etched.

The method for manufacturing the wire grid polarizing element 10 may further include the step of forming an antireflection layer on the other surface of the transparent substrate 11 . The method for manufacturing the wire grid polarizing element 10 may further include a step of covering at least a portion of the surface with a protective film, or may further include a step of covering at least a portion of the surface with an organic water-repellent film. good too.

[Optical equipment]
The optical equipment of this embodiment includes the wire grid polarization element of this embodiment.

Examples of the optical device of the present embodiment include, but are not particularly limited to, a liquid crystal display, a liquid crystal projector, a head-up display, a car headlight, and the like. Among these, the liquid crystal projector is preferable in consideration of the heat resistance of the wire grid polarizing element of this embodiment.

When the optical device of this embodiment includes a plurality of polarizing elements, at least one of the plurality of polarizing elements may be the wire grid polarizing element of this embodiment. For example, when the optical apparatus of this embodiment is a liquid crystal projector, at least one of the polarization elements arranged on the incident side and the exit side of the liquid crystal panel may be the wire grid polarization element of this embodiment.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and the above embodiments may be modified as appropriate within the scope of the present invention.

Examples of the present invention will be described below, but the present invention is not limited to these examples.

[Experimental example 1]
An AlNd alloy film with a Nd content of 0.2 at % was formed as the reflective layer 12a to a thickness of 250 nm on a glass substrate B270 (manufactured by SCHOTT) as the transparent substrate 11, and a test simulating a wire grid polarizer was performed. A piece (see Figure 2) was obtained.

[Comparative Experimental Example 1]
A test piece was obtained in the same manner as in Experimental Example 1, except that an Al film was formed instead of the AlNd alloy film.

[Heat test 1]
Heat resistance test 1 was performed by leaving the test piece in an oven heated to 300° C. for 1000 hours.

[Microscopic observation]
Using a microscope, the surface of the reflective layer of the test piece before and after the heat resistance test 1 was observed.

FIG. 3 shows micrographs of the surface of the reflective layer before and after the heat resistance test 1 was performed. As can be seen from FIG. 3, the Al film of Comparative Experimental Example 1 has many hillocks, whereas the AlNd alloy film of Experimental Example 1 has almost no hillocks.

[Change in n-polarization reflectance]
S-polarized light and p-polarized light were incident at an incident angle of 5° on the reflective layer of the test piece when the heating time of the heat resistance test 1 was a predetermined time, and the n-polarized light reflectance was measured using a spectrophotometer. The n-polarization reflectance is the average of the p-polarization reflectance and the s-polarization reflectance.

FIG. 4 shows the relationship between the amount of change in the n-polarized light reflectance of the reflective layer and the heating time in heat resistance test 1. As shown in FIG. As can be seen from FIG. 4, the AlNd alloy film of Experimental Example 1 suppresses the variation of the n-polarized light reflectance in the heat resistance test 1 as compared with the Al film of Comparative Experimental Example 1. FIG.

[Example 1]
By laminating a reflective layer, a dielectric layer, and an absorbing layer on one surface of a transparent substrate in this order from the transparent substrate side to form a laminate, and then selectively etching the laminate. , lattice-like projections were formed to obtain a wire grid polarizing element (see FIG. 1). Here, when selectively etching the laminate, a one-dimensional lattice-like mask pattern is formed on the laminate using a resist by a photolithography method, and then a mask for the laminate is formed by a dry etching method. The unpatterned areas were etched. The configuration of the wire grid polarization element is as follows.
Transparent substrate: glass substrate Reflective layer: AlNd alloy film with a Nd content of 0.2 at% (thickness: 250 nm)
Dielectric layer: _SiO2 film (thickness 5 nm)
Absorption layer: FeSi film (thickness 25 nm)
Antireflection layer: multilayer film of _SiO2 film and _TiO2 film Protective film: _SiO2 film (thickness 15 nm)
Pitch p of lattice-shaped convex portions: 141 nm
Width w of grid-like protrusions: 50 nm

[Comparative Example 1]
A wire grid polarizer was obtained in the same manner as in Example 1, except that an Al film was formed as the reflective layer instead of the AlNd alloy film.

[Heat test 2, 3]
Heat resistance test 2 and heat resistance test 3 were carried out by leaving the wire grid polarizing element in ovens heated to 300° C. and 350° C. for 1000 hours, respectively.

[Contrast (CR) variation]
S-polarized light and p-polarized light were incident at an incident angle of 5° to the wire grid polarizer when the heating time in heat resistance tests 2 and 3 was a predetermined time, and CR was measured using a spectrometer. Note that CR is the ratio of p-polarized light transmittance to s-polarized light transmittance.

5 and 6 show the relationship between the CR change rate of the reflective layer and the heating time in heat resistance tests 2 and 3, respectively. 5 and 6 that the wire grid polarizing element of Example 1 suppresses variations in contrast in heat resistance tests 2 and 3 compared to the wire grid polarizing element of Comparative Example 1. FIG.

REFERENCE SIGNS LIST 10 wire grid polarizing element 11 transparent substrate 12 grid-like projections 12a reflective layer 12b dielectric layer 12c absorbing layer

Claims (14)

a transparent substrate;
a grid-like protrusion arranged on one surface of the transparent substrate at a pitch shorter than the wavelength of light in the operating band and extending in a predetermined direction;
the lattice-shaped convex portion has a reflective layer, a dielectric layer, and an absorbing layer in order from the transparent substrate side;
A wire grid polarizer, wherein the reflective layer includes an AlNd alloy. The wire grid polarizing element according to claim 1, wherein the AlNd alloy has a Nd content of 0.2 at% or more. 3. The wire grid polarizing element according to claim 1, wherein said transparent substrate is transparent to light in said working band and contains glass, crystal, quartz or sapphire. 4. The wire grid polarizer according to any one of claims 1 to 3, wherein said dielectric layer comprises Si oxide, Ti oxide, Zr oxide, Al oxide, Nb oxide or Ta oxide. The wire grid polarization element according to any one of claims 1 to 4, wherein the absorption layer absorbs light in the usable band and contains a metal, an alloy, or a semiconductor. The wire grid polarizing element according to any one of claims 1 to 5, further comprising an antireflection layer on the other surface of said transparent substrate. At least part of the surface is covered with a protective film,
The wire grid polarizing element according to any one of claims 1 to 6, wherein the protective film contains the same material as that contained in the dielectric layer. The wire grid polarizing element according to any one of claims 1 to 7, wherein at least part of the surface is covered with an organic water-repellent film. laminating a reflective layer, a dielectric layer, and an absorbing layer on one surface of a transparent substrate in this order from the transparent substrate side to form a laminate;
a step of selectively etching the laminate to form grid-like projections arranged at a pitch shorter than the wavelength of light in the operating band and extending in a predetermined direction;
The method for manufacturing a wire grid polarizer, wherein the reflective layer includes an AlNd alloy. 10. The method of manufacturing a wire grid polarizing element according to claim 9, wherein the AlNd alloy has a Nd content of 0.2 at % or more. 11. The method of manufacturing a wire grid polarization element according to claim 9, further comprising the step of forming an antireflection layer on the other surface of said transparent substrate. further comprising covering at least part of the surface with a protective film;
12. The method of manufacturing a wire grid polarizing element according to claim 9, wherein said protective film contains the same material as that contained in said dielectric layer. 13. The method for manufacturing a wire grid polarizing element according to any one of claims 9 to 12, further comprising the step of covering at least part of the surface with an organic water-repellent film. An optical instrument comprising the wire grid polarization element according to any one of claims 1 to 8.

Images