JP2023097376A - Plasma processing device and manufacturing method of electrostatic chuck - Google Patents

Abstract

To provide a technique capable of reducing loss or leakage of a RF power.SOLUTION: A plasma processing device comprises: a plasma processing chamber; a substrate support part that is arranged in the plasma processing chamber, which includes a dielectric member having a substrate support surface, a first filter element that is arranged in the dielectric member, and includes a first terminal and a second terminal, and a first electrostatic electrode that is arranged in the dielectric member, and is electrically connected to the first terminal; an RF generation part that is coupled to the plasma processing chamber, and is constructed so as to generate an RF signal; and a first DC generation part that is electrically connected to the second terminal, and is constructed so as to generate a DC signal.SELECTED DRAWING: Figure 3

Description

Exemplary embodiments of the present disclosure relate to plasma processing apparatuses and methods of manufacturing electrostatic chucks.

As a plasma processing apparatus having an electrostatic chuck, there is a technology described in Patent Document 1.

U.S. Patent Application Publication No. 2020/0343123

The present disclosure provides techniques that can reduce RF power loss and leakage.

In one exemplary embodiment of the present disclosure, a plasma processing chamber and a substrate support disposed within the plasma processing chamber, the substrate support comprising a dielectric member having a substrate support surface; a first filter element disposed within a member and having a first terminal and a second terminal; and a first electrostatic element disposed within the dielectric member and electrically connected to the first terminal. an RF generator coupled to the plasma processing chamber and configured to generate an RF signal; and electrically connected to the second terminal to generate a DC signal. A plasma processing apparatus is provided comprising a first DC generator configured to.

According to one exemplary embodiment of the present disclosure, techniques can be provided that can reduce RF power loss and leakage.

1 is a diagram for explaining a configuration example of a plasma processing system; FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus; FIG. 3 is a diagram showing an example of a configuration of a substrate supporting portion 11; FIG. 4 is a diagram showing an example of the configuration of a filter element 52; FIG. FIG. 4 is a diagram showing another example of the configuration of the filter element 52; FIG. 4 is a diagram showing another example of the configuration of the filter element 52; 4 is a flow chart showing an example of a method for manufacturing filter elements 52 and 62. FIG. FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; FIG. 4 is a diagram showing an example of a method of manufacturing filter elements 52 and 62; 4 is a diagram showing another example of the configuration of the substrate supporting portion 11; FIG. 4 is a diagram showing another example of the configuration of the substrate supporting portion 11; FIG.

Each embodiment of the present disclosure will be described below.
In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus is a plasma processing chamber and a substrate support disposed within the plasma processing chamber, the substrate support including a dielectric member having a substrate support surface, a dielectric member disposed within the dielectric member, and a first A substrate support having a first filter element having a terminal and a second terminal, and a first electrode disposed within a dielectric member and electrically connected to the first terminal; and plasma processing. an RF generator coupled to the chamber and configured to generate an RF signal; and a first DC generator electrically connected to the second terminal and configured to generate a DC signal. .

In one exemplary embodiment, the first electrode comprises an electrostatic chuck electrode.

In one exemplary embodiment, the first electrode includes a bias electrode.

In one exemplary embodiment, the first filter element is a low pass filter.

In one exemplary embodiment, the first filter element includes a first resistive element.

In one exemplary embodiment, the first resistive element is arranged perpendicular to the substrate support surface.

In one exemplary embodiment, the first resistive element is arranged parallel to the substrate support surface.

In one exemplary embodiment, the first electrode is arranged parallel to the substrate support surface and the first resistive element is arranged parallel to the first electrode below the first electrode. and the first resistive element has a first terminal and a second terminal.

In one exemplary embodiment, the first resistive element has a plurality of resistive wires electrically connected in parallel between the first terminal and the second terminal.

In one exemplary embodiment, the first resistive element has a curved line pattern in plan view of the substrate support surface.

In one exemplary embodiment, the first filter element includes a second resistive element, the second resistive element being arranged below and parallel to the first resistive element. the second resistive element has a third terminal and a fourth terminal, the third terminal is electrically connected to the first electrode via the second terminal, and the fourth The terminal is electrically connected to the first DC generator.

In one exemplary embodiment, the first filter element includes a first inductor element.

In one exemplary embodiment, the first inductor element is arranged parallel to the substrate support surface.

In one exemplary embodiment, the first electrode is arranged parallel to the first plane and the first inductor element is below the first electrode and relative to the first electrode. Arranged in parallel, the first inductor element has a first terminal and a second terminal.

In one exemplary embodiment, the first inductor element has a spiral line pattern in plan view of the substrate support surface.

In one exemplary embodiment, the first filter element includes a second inductor element arranged below and parallel to the first inductor element. and the second inductor element has a third terminal and a fourth terminal, the third terminal is electrically connected to the first electrode via the second terminal, and the fourth The terminal is electrically connected to the first DC generator.

In one exemplary embodiment, the plasma processing apparatus further comprises a second DC generator configured to generate a DC signal, the dielectric member having a ring support surface around the substrate support surface. wherein the substrate support includes a second filter element disposed within the dielectric member and having a fifth terminal and a sixth terminal; and a second filter element disposed within the dielectric member and including the fifth terminal. and a second electrode electrically connected to the terminal, wherein the second DC generator is electrically connected to the sixth terminal.

In one exemplary embodiment, further comprising an RF electrode electrically connected to the RF generator, the RF electrode includes a metal member, the metal member bonded to the dielectric member.

In one exemplary embodiment, further comprising an RF electrode electrically connected to the RF generator, the RF electrode disposed within the dielectric member.

In one exemplary embodiment, a method of manufacturing an electrostatic chuck having electrodes is provided. A method of manufacturing an electrostatic chuck includes the steps of providing a first dielectric layer having a first surface and a second surface opposite to the first surface; forming an electrode on the first surface; forming a plug in the first dielectric layer, the plug being formed through the first dielectric layer, one end of the plug being connected to the electrode on the first surface; forming a plug, the end of which is exposed on the second surface; providing a second dielectric layer having a third surface and a fourth surface opposite the third surface; forming a filter element on surface 3; and connecting the ends.

Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numerals, and overlapping descriptions are omitted. Unless otherwise specified, positional relationships such as top, bottom, left, and right will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not indicate the actual ratios, and the actual ratios are not limited to the illustrated ratios.

<Example of plasma processing system>
FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a controller 2 . The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate support section 11 and a plasma generation section 12 . Plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas inlet for supplying at least one process gas to the plasma processing space and at least one gas outlet for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later. The substrate support 11 is arranged in the plasma processing space and has a substrate support surface for supporting the substrate.

The plasma generator 12 is configured to generate plasma from at least one processing gas supplied within the plasma processing space. Plasma formed in the plasma processing space includes capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave excited plasma (HWP: Helicon Wave Plasma), surface wave plasma (SWP: Surface Wave Plasma), or the like. Also, various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency within the range of 100 kHz to 10 GHz. Accordingly, AC signals include RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency within the range of 100 kHz-150 MHz.

<Example of CCP plasma processing apparatus>
FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2 . A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply section 20 , a power supply 30 and an exhaust system 40 . Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction is configured to introduce at least one process gas into the plasma processing chamber 10 . The gas introduction section includes a showerhead 13 . A substrate support 11 is positioned within the plasma processing chamber 10 . The showerhead 13 is arranged above the substrate support 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10 s defined by a showerhead 13 , side walls 10 a of the plasma processing chamber 10 and a substrate support 11 . The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space. Plasma processing chamber 10 is grounded. The showerhead 13 and substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .

The substrate support portion 11 includes a body portion 111 and a ring assembly 112 . The body portion 111 has a central region 111 a for supporting the substrate W and an annular region 111 b for supporting the ring assembly 112 . A wafer is an example of a substrate W; The annular region 111b of the body portion 111 surrounds the central region 111a of the body portion 111 in plan view. The substrate W is arranged on the central region 111 a of the main body 111 , and the ring assembly 112 is arranged on the annular region 111 b of the main body 111 so as to surround the substrate W on the central region 111 a of the main body 111 . Accordingly, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112. FIG.

In one embodiment, body portion 111 includes base 1110 and electrostatic chuck 1111 . Base 1110 includes a conductive member. A conductive member of the base 1110 can function as a bottom electrode. An electrostatic chuck 1111 is arranged on the base 1110 . The electrostatic chuck 1111 includes a ceramic member 1111a and an electrode 1111b disposed within the ceramic member 1111a. In one embodiment, electrode 1111b comprises an electrostatic chuck electrode. Ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or may be placed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF/DC electrode coupled to an RF (Radio Frequency) power source 31 and/or a DC (Direct Current) power source 32, which will be described later, may be arranged in the ceramic member 1111a. In this case, at least one RF/DC electrode functions as the bottom electrode. If a bias RF signal and/or a DC signal, described below, is applied to at least one RF/DC electrode, the RF/DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF/DC electrode may function as a plurality of lower electrodes. Alternatively, the electrode 1111b may function as a lower electrode. In this case, electrode 1111b comprises a bias electrode. Accordingly, the substrate support 11 includes at least one bottom electrode.

Ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is made of a conductive material or an insulating material, and the cover ring is made of an insulating material.

Also, the substrate supporter 11 may include a temperature control module configured to control at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include heaters, heat transfer media, channels 1110a, or combinations thereof. A heat transfer fluid, such as brine or gas, flows through flow path 1110a. In one embodiment, channels 1110 a are formed in base 1110 and one or more heaters are positioned in ceramic member 1111 a of electrostatic chuck 1111 . The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

The showerhead 13 is configured to introduce at least one process gas from the gas supply 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through a plurality of gas introduction ports 13c. Showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction part may include one or more side gas injectors (SGI: Side Gas Injectors) attached to one or more openings formed in the side wall 10a.

Gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, gas supply 20 is configured to supply at least one process gas from respective gas sources 21 through respective flow controllers 22 to showerhead 13 . Each flow controller 22 may include, for example, a mass flow controller or a pressure controlled flow controller. Additionally, gas supply 20 may include one or more flow modulation devices that modulate or pulse the flow of at least one process gas.

Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance match circuit. RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and/or at least one upper electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, RF power source 31 may function as at least part of a plasma generator configured to generate a plasma from one or more process gases in plasma processing chamber 10 . Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W. FIG.

In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit to generate a source RF signal (source RF power) for plasma generation. configured as In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. One or more source RF signals generated are provided to at least one bottom electrode and/or at least one top electrode.

A second RF generator 31b is coupled to the at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. One or more bias RF signals generated are provided to at least one bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power supply 30 may also include a DC power supply 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one bottom electrode and configured to generate a first DC signal. A generated first bias DC signal is applied to at least one bottom electrode. In one embodiment, the second DC generator 32b is connected to the at least one top electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one top electrode.

In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one bottom electrode and/or at least one top electrode. The voltage pulses may have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the at least one bottom electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses in one cycle. Note that the first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generator 32a may be provided instead of the second RF generator 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.

<Example of Configuration of Substrate Supporting Portion 11>
FIG. 3 is a diagram showing a configuration example of the substrate supporting portion 11 shown in FIG. FIG. 3 is a diagram showing a cross section of a portion of the substrate supporting portion 11. As shown in FIG. In the configuration example shown in FIG. 3 , the substrate supporter 11 includes a base 1110 , an electrostatic chuck 1111 and a bonding member 1112 . A base 1110 is joined to an electrostatic chuck 1111 via a joining member 1112 . Bonding member 1112 may be, for example, an adhesive containing silicone. The electrostatic chuck 1111 has a bonding surface 42 a for bonding with the bonding member 1112 or the base 1110 .

One or more through holes 1114 are provided in the base 1110 . Each through-hole 1114 may be provided from the base 1110 over a portion of the joining member 1112 and the ceramic member 1111a. As an example, each through hole 1114 is provided through the bonding member 1112 and the dielectric layer 42 . A power supply line 1118 is arranged inside each through hole 1114 . One end of each power supply line 1118 is electrically connected to the electrode 1111b or 1111c via an electrode 1116 arranged at the end of the corresponding through hole 1114 . Also, the other end of each power supply line 1118 is electrically connected to the DC power supply 32 . Each feed line 1118 is electrically isolated from the base 1110 .

In the electrostatic chuck 1111, the ceramic member 1111a includes a plurality of dielectric layers 42, 50, 60, 70, 80 and 90 (hereinafter referred to as dielectric layers 42, 50, 60, 70, 80 and 90). may be collectively referred to as a “dielectric layer”). The ceramic member 1111a is an example of a dielectric member.

In FIG. 3, lines indicating boundaries between adjacent dielectric layers are shown for convenience of explanation. That is, in FIG. 3, each dielectric layer may represent a region in ceramic member 1111a. For example, physical boundaries may or may not exist between adjacent dielectric layers. In addition, adjacent dielectric layers may be configured to contain the same dielectric material, or may be configured to contain different dielectric materials.

Ceramic member 1111 a has a central region 111 a for supporting substrate W and an annular region 111 b for supporting ring assembly 112 . The central region 111a has a substrate support surface 111c for supporting the substrate W thereon. Annular region 111 b also has ring support surface 111 d for supporting ring assembly 112 . The substrate support surface 111c and the ring support surface 111d may be on the opposite side of the bonding surface 42a in the ceramic member 1111a.

The electrostatic chuck 1111 has an electrode 1111b and an electrode 1111c. In one embodiment, electrode 1111b and/or electrode 1111c comprises an electrostatic chuck electrode. Note that the electrode 1111b and/or the electrode 1111c may include a bias electrode. A mode in which the electrode 1111b and/or the electrode 1111c includes an electrostatic chuck electrode will be described below as an example. Therefore, in the following examples, electrodes 1111b and 1111c are also referred to as electrostatic electrodes 1111b and 1111c, respectively. The electrostatic electrode 1111b may be an electrode for attracting the substrate W to the substrate supporting surface 111c. Also, the electrostatic electrode 1111c may be an electrode for attracting the ring assembly 112 to the ring support surface 111d. The electrostatic electrodes 1111 b and 1111 c are electrically connected to the DC power supply 32 . The DC power supply 32 may apply different voltages to the electrostatic electrodes 1111b and 1111c. Also, the DC power supply 32 may apply voltages to the electrostatic electrodes 1111b and 1111c at different timings.

An electrostatic electrode 1111b may be disposed on the dielectric layer 80 inside the ceramic member 1111a. Also, the electrostatic electrode 1111b can be positioned between the substrate support surface 111c and the bonding surface 42a. Also, the electrostatic electrode 1111b may be arranged parallel to the substrate supporting surface 111c. An electrostatic electrode 1111c may be disposed on the dielectric layer 70 inside the ceramic member 1111a. Also, the electrostatic electrode 1111c can be positioned between the ring support surface 111d and the bonding surface 42a. Also, the electrostatic electrode 1111c may be arranged parallel to the ring support surface 111d. Electrostatic electrodes 1111c may include electrostatic electrode 1111c1 and electrostatic electrode 1111c2. Electrostatic electrode 1111c1 and electrostatic electrode 1111c2 may constitute a bipolar electrostatic chuck.

The electrostatic chuck 1111 has filter elements 52 and 62 . The filter element 52 is a filter that attenuates RF components contained in RF signals passing through the filter element 52 . Also, the filter element 62 is a filter that attenuates the RF component contained in the RF signal that passes through the filter element 62 . As an example, the RF signal is an RF signal generated in a conductive member electrically connected to the electrostatic electrode 1111b or 1111c under the influence of the source RF signal and/or bias RF signal supplied to the base 1110. you can The conductive member is, for example, the power supply line 1118 . Filter elements 52 and 62 connected to electrostatic electrode 1111b are an example of a first filter element. Also, the filter elements 52 and 62 connected to the electrostatic electrode 1111c are an example of a second filter element.

Filter element 52 may include filter elements 52a, 52b and 52c (filter elements 52a, 52b and/or 52c are also referred to as "filter elements 52"). Filter element 52a is electrically connected to electrostatic electrode 1111b. Filter element 52b is electrically connected to electrostatic electrode 1111c1. Filter element 52c is electrically connected to electrostatic electrode 1111c2.

Filter element 52 may be disposed on dielectric layer 50 . Filter element 52 may be positioned between electrostatic electrodes 1111b and/or 1111c and mating surface 42a. Filter element 52a electrically connected to electrostatic electrode 1111b may be disposed in the same layer as filter elements 52b and 52c electrically connected to electrostatic electrode 1111c. The same layer is, for example, the dielectric layer 50 . A plug 54 is arranged in the dielectric layer 50 so as to penetrate the dielectric layer 50 in a direction perpendicular to the substrate supporting surface 111c. One end of the plug 54 is connected to the filter elements 52 (52a, 52b and 52c). Also, the other end of the plug 54 is connected to the electrode 1116 . Plug 54 may function as part of a wire that applies the DC signal/DC voltage generated by DC power supply 32 to electrostatic electrodes 1111b or 1111c.

Filter element 62 may include filter elements 62a, 62b and 62c (filter elements 62a, 62b and/or 62c are also referred to as "filter elements 62"). Filter element 62a is electrically connected to electrostatic electrode 1111b. Filter element 62b is electrically connected to electrostatic electrode 1111c1. Filter element 62c is electrically connected to electrostatic electrode 1111c2.

Filter element 62 may be disposed on dielectric layer 60 . Filter element 62 may be positioned between electrostatic electrodes 1111 b and/or 1111 c and filter element 52 . Filter element 62a electrically connected to electrostatic electrode 1111b may be disposed in the same layer as filter elements 62b and 62c electrically connected to electrostatic electrode 1111c. The same layer is, for example, dielectric layer 60 . A plug 64 is arranged in the dielectric layer 60 so as to penetrate the dielectric layer 60 in a direction perpendicular to the substrate supporting surface 111c. One end of the plug 64 is connected to the filter elements 62 (62a, 62b and 62c). The other end of the plug 54 is connected to the filter elements 52 (52a, 52b and 52c). The plug 64 may function as part of a wire that applies the DC signal/DC voltage generated by the DC power supply 32 to the electrostatic electrodes 1111b or 1111c.

Note that the filter element 62a electrically connected to the electrostatic electrode 1111b may be arranged in the same layer as the electrostatic electrode 1111c. That is, the filter element 62a electrically connected to the electrostatic electrode 1111b can be placed on the dielectric layer 70. FIG. In this case, plugs 64 connected to filter elements 52a and 62a may be placed through dielectric layers 60 and .

The ceramic member 1111a has plugs 74 and 84 . Plugs 74 are disposed in dielectric layer 70 through dielectric layer 70 . One end of the plug 74 is connected to the electrostatic electrode 1111c. Also, the other end of the plug 74 is connected to the filter element 62 . Plugs 84 are disposed in dielectric layers 70 and 80 through dielectric layers 70 and 80 . One end of the plug 84 is connected to the electrostatic electrode 1111b. Also, the other end of the plug 84 is connected to the filter element 62 .

It should be noted that plugs 54, 64, 74 and/or 84, like filter elements 52 or 62, may function as filters to attenuate RF components contained in RF signals passing through each plug. When plugs 54, 64, 74 and/or 84 function as filters, each plug may comprise, for example, a resistive material.

Filter elements 52 and 62 may be low pass filters. As an example, filter elements 52 and 62 may be resistive or inductor elements. An example of the configuration of the filter elements 52 and 62 will be described with reference to FIGS. 3 and 4 to 6. FIG.

<Example of Configuration of Filter Element>
FIG. 4 is a diagram showing an example of the configuration of the filter element 52. As shown in FIG. FIG. 4 is a plan view of the filter element 52 electrically connected to the electrostatic electrode 1111b in FIG. 3, that is, a view from the substrate supporting surface 111c. FIG. 4 shows, as an example, a configuration in which the filter element 52 is a resistive element. Note that the filter element 62 may have the same configuration as the filter element 52 shown in FIG.

The filter element 52 has terminals 521 , 522 and resistance wiring 523 . A terminal 521 , a terminal 522 and a resistance wiring 523 are arranged on the surface of the dielectric layer 50 . The terminal 521, the terminal 522 and the resistance wiring 523 may be integrally formed. Also, the terminals 521, 522 and resistance wiring 523 may be made of the same resistance material. The resistive material can be arbitrarily selected according to the resistance value that the filter element 52 and/or the filter element 62 should have. As an example, the resistance value may be 100 kΩ or more and 100 MΩ or less. Also, the resistance value may be 1 MΩ or more and 10 MΩ or less.

Note that the resistance value of the resistance wiring 523 may be adjusted by trimming a part of the resistance wiring 523 . For example, one or more of portions ac of resistive wire 523 may be trimmed to adjust the width, thickness, area and/or volume of resistive wire 523 to adjust the resistance of resistive wire 523 . As an example, an opening 53 may be formed in the dielectric layer 50 to expose portions a to c of the resistive line 523 . Then, a part of the resistive wiring 523 exposed in the opening 53 may be trimmed by laser or the like. Thereby, a filter element having a desired resistance value or filter characteristic can be formed.

The terminal 521 is connected to one end of the resistance wiring 523 . Terminal 521 is connected to plug 64 shown in FIG. Also, the terminal 522 is connected to the other end of the resistance wiring 523 . Terminal 522 is connected to plug 54 shown in FIG. The terminal 521 and/or the terminal 522 may be arranged between both ends of the resistor wire 523 and connected to the resistor wire 523 . The terminal 521 is an example of a first terminal, a third terminal, and a fifth terminal. Also, the terminal 522 is an example of a second terminal, a fourth terminal, and a sixth terminal.

The resistance wiring 523 may have a linear pattern in plan view. Also, the resistance wiring 523 may have a bent line pattern as shown in FIG. The pattern shape, length, area and/or volume of the resistance wiring 523 may be arbitrarily selected according to the resistance value that the filter element 52 should have.

FIG. 5 is a diagram showing another example of the configuration of the filter element 52. As shown in FIG. The example shown in FIG. 5 is an example of a configuration in which the filter element 52 is a resistive element whose resistance value is adjustable. In this example, the resistance of filter element 52 is adjusted by trimming a portion of filter element 52 . Note that the filter element 62 may have the same configuration as the filter element 52 shown in FIG.

In the example shown in FIG. 5, the filter element 52 has terminals 521 , 522 and resistive wiring 523 . The resistance wiring 523 includes a plurality of wirings electrically connected in parallel between the terminals 521 and 522 . The plurality of wirings form a plurality of current paths. The resistance value of the resistance wiring 523 may be adjusted by trimming a part of the resistance wiring 523 . For example, by trimming one or more of the portions d to g of the resistance wiring 523, the number of wirings (current paths) included in the resistance wiring 523 and the length, area and/or volume of the resistance wiring 523 are adjusted. , the resistance value of the resistance wiring 523 may be adjusted. As an example, an opening 53 may be formed in the dielectric layer 50 to partially expose the resistance wiring 523 . Then, a part of the resistive wiring 523 exposed in the opening 53 may be trimmed by laser or the like. Thereby, a filter element having a desired resistance value or filter characteristic can be formed. Note that the width or thickness of the resistance wiring 523 may be reduced in at least part of the resistance wiring 523 by laser or the like.

FIG. 6 is a diagram showing another example of the configuration of the filter element 52. As shown in FIG. FIG. 6 shows, as an example, a configuration in which the filter element 52 is an inductor element. Note that the filter element 62 may have the same configuration as the filter element 52 shown in FIG.

In the example shown in FIG. 6, filter element 52 has terminals 524 , terminals 525 and conductive traces 526 . Terminals 524 , terminals 525 and conductive traces 526 are disposed on the surface of dielectric layer 50 . Terminals 524, terminals 525 and conductive traces 526 may be integrally formed. Also, the terminals 524, 525, and conductive lines 526 may be made of the same conductive material.

A terminal 524 is connected to one end of a conductive line 526 . Terminal 524 is connected to plug 64 shown in FIG. Also, the terminal 525 is connected to the other end of the conductive wiring 526 . Terminal 525 is connected to plug 54 shown in FIG. Terminals 524 and/or terminals 525 may be disposed in connection with conductive trace 526 between opposite ends of conductive trace 526 . Terminal 524 is an example of a first terminal, a third terminal, and a fifth terminal. Also, the terminal 525 is an example of a second terminal, a fourth terminal, and a sixth terminal.

The conductive wiring 526 may have a linear pattern in plan view. Also, the conductive trace 526 may have a spiral line pattern, as shown in FIG. The pattern shape, length, area and/or volume of the conductive line 526 may be arbitrarily selected according to the inductance that the filter element 52 should have.

Note that the inductance of the filter element 52 may be adjusted by trimming a portion of the conductive wiring 526 . For example, one or more of portions hk of conductive line 526 may be trimmed to adjust the width, thickness, area and/or volume of conductive line 526 to adjust the resistance of conductive line 526 . As an example, openings 53 may be formed in dielectric layer 50 such that portions hk of conductive traces 526 are exposed. Then, a portion of the conductive wiring 526 exposed in the opening 53 may be trimmed by laser or the like. Thereby, a filter element having a desired resistance value or filter characteristic can be formed. It should be noted that the inductance of filter element 52 may be adjusted by adjusting the width, thickness and/or cross-sectional area of conductive trace 526 substantially throughout conductive trace 526 . In this case, the opening 53 may be formed so that the entire conductive wiring 526 is exposed.

<Method for manufacturing filter element>
FIG. 7 is a flow chart showing an example method of manufacturing filter elements 52 and 62 . This example includes a step of forming dielectric layer 50 (ST1), a step of forming dielectric layer 60 (ST2), and a step of bonding dielectric layers 50 and 60 (ST3). 8A and 8B are diagrams showing an example of each manufacturing process of the filter elements 52 and 62. FIG.

First, as shown in FIG. 8A, a plurality of dielectric sheets 50-1 to 50-n are prepared (n is an integer of 2 or more). As an example, the dielectric sheet may be a ceramic green sheet. The number of dielectric sheets may be arbitrarily selected according to the thickness of the dielectric layer 50 . Then, the plurality of dielectric sheets 50-1 to 50-n are thermally compressed to form the dielectric layer 50 as shown in FIG. 8B.

Next, a filter element 52 is formed on the surface of the dielectric layer 50, as shown in FIG. 8c. The filter element 52 may be formed by printing or depositing a resistive material or a conductive material on the surface of the dielectric layer 50 .

Next, through holes 56 are formed in the dielectric layer 50, as shown in FIG. 8d. A through hole 56 is formed in the dielectric layer 50 such that a portion of the filter element 52 is exposed at the through hole 56 . The through-holes 56 may be formed such that the terminals 52b and 52e shown in FIGS. 4 to 6 are partially exposed.

Next, as shown in FIG. 8E, plugs 54 are formed in through holes 56 . The plug 54 may be formed by filling the through hole 56 with a resistive material or a conductive material. Thereby, the dielectric layer 50 having the filter element 52 and the plug 54 arranged thereon is formed (step ST1).

Next, as shown in FIG. 8F, a dielectric layer 60 having filter elements 62 and plugs 64 arranged thereon is formed in the same steps as in FIGS. 8A to 8E (step ST2).

Next, as shown in FIG. 8G, dielectric layer 50 and dielectric layer 60 are placed facing each other. Dielectric layers 50 and 60 are arranged such that the surface of dielectric layer 50 on which filter element 52 is formed faces the surface of dielectric layer 60 opposite to the surface on which filter element 62 is formed.

Dielectric layer 50 and dielectric layer 60 are then bonded, as shown in FIG. 8H. Dielectric layers 50 and 60 are bonded, for example, by thermocompression. As a result, the dielectric layers 50 and 60 are joined, the filter element 52 and the plug 64 are joined, and the filter element 52 and the filter element 62 are electrically connected. Thus, the dielectric layers 50 and 60 on which the filter elements 52 and 62 are arranged are formed (step ST3).

Dielectric layers 42, 70, 80 and 90 may also be formed in a similar manner by steps similar to some or all of FIGS. 8A-8H. By bonding the dielectric layers 42 to 90, the electrostatic chuck 1111 shown in FIG. 3 is formed.

<Another example of the configuration of the substrate supporting portion 11>
FIG. 9 is a diagram showing an example of the configuration of the substrate supporting portion 11. As shown in FIG. In the example shown in FIG. 9, the substrate supporter 11 includes a bias electrode 72, a plug 76, a dielectric layer 78, an electrode 1216, and a feed line 1218 in addition to the structural example of the substrate supporter 11 shown in FIG.

Dielectric layer 78 is disposed between dielectric layers 70 and 80 . Dielectric layer 78 may be integrally formed with dielectric layer 70 and/or dielectric layer 80 . That is, in FIG. 9, lines indicating boundaries between adjacent dielectric layers are drawn for convenience of explanation. That is, in FIG. 9, each dielectric layer may represent a region in ceramic member 1111a. For example, physical boundaries may or may not exist between adjacent dielectric layers. In addition, adjacent dielectric layers may be configured to contain the same dielectric material, or may be configured to contain different dielectric materials.

The bias electrode 72 has a bias electrode 72a and/or a bias electrode 72b. Bias electrodes 72a and 72b are electrodes to which a bias RF signal and/or a bias DC signal are supplied. The bias electrode 72a is arranged below the central region 111a. Also, the bias electrode 72b is arranged below the annular region 111b. Bias electrodes 72 a and 72 b are electrically connected to power supply 30 . RF power supply 31 may provide a bias RF signal to bias electrodes 72a and/or 72b. DC power supply 32 may provide a bias DC signal to bias electrodes 72a and/or 72b.

A bias electrode 72a may be disposed on the dielectric layer 78 within the ceramic member 1111a. That is, the bias electrode 72a can be placed in the same layer as the electrostatic electrode 1111c. A bias electrode 72 a may be disposed on the dielectric layer 70 . In a plan view of the substrate supporting portion 11, the bias electrode 72a can be arranged so as to surround the plug 84. As shown in FIG. One end of a plug 76a is connected to the bias electrode 72a.

A bias electrode 72b may be disposed on the dielectric layer 70 within the ceramic member 1111a. That is, the bias electrode 72b may be located inside the dielectric layer 78. FIG. In a plan view of the substrate supporting portion 11, the bias electrode 72b can be arranged so as to surround the plug 74. As shown in FIG. One end of a plug 76b is connected to the bias electrode 72b.

Also, the base 1110 is provided with two or more through holes 1214 . The two or more through holes 1214 include one or more through holes 1214a and one or more 1214b. Through-hole 1214 can have a structure similar to through-hole 1114 . A power supply line 1218a is arranged inside the through hole 1214a. One end of the feed line 1218a is electrically connected to the bias electrode 72a via an electrode 1216a arranged at the end of the through hole 1214a. The other end of each power supply line 1218 a is electrically connected to the DC power supply 32 . A power supply line 1218b is arranged inside the through hole 1214b. One end of the feed line 1218b is electrically connected to the bias electrode 72b via an electrode 1216b arranged at the end of the through hole 1214b. Also, the other end of each power supply line 1218b is electrically connected to the DC power supply 32 .

The bias electrode 72a is an electrode capable of controlling the potential of the substrate W arranged in the central region 111a. The potential may be the potential of the substrate W with respect to the plasma processing space 10s. Also, the bias electrode 72b is an electrode capable of controlling the potential of the ring assembly 112 arranged in the annular region 111b. The potential may be the potential of the ring assembly 112 with respect to the plasma processing space 10s. The power supply 30 may supply the same bias signal to both the bias electrode 72a and the bias electrode 72b, or may supply different bias signals. Also, only one of the bias electrode 72 a and the bias electrode 72 b may be arranged on the substrate support portion 11 .

<Another example of the configuration of the substrate supporting portion 11>
FIG. 10 is a diagram showing an example of the configuration of the substrate supporting portion 11. As shown in FIG. In the example shown in FIG. 10, the substrate supporter 11 includes filter elements 52 and 62 between the bias electrode 72 and the RF power supply 31 or the DC power supply 32 in addition to the configuration example of the substrate supporter 11 shown in FIG. Prepare. That is, the bias electrode 72 can be supplied with a bias RF signal or a bias DC signal. Further, as an example, the substrate support portion 11 includes filter elements 52d, 52e, 62d and 62e. Filter elements 52d and 62d are examples of first filter elements. Filter elements 52e and 62e are examples of second filter elements. Also, the bias electrode 72a is an example of a first electrode. The bias electrode 72b is an example of a second electrode.

Filter elements 52d and 52e may have a configuration similar to filter elements 52a-52c. Filter elements 52d and 52e may be formed with filter elements 52a-52c. Filter elements 52d and 52e may be placed in the same layer as filter elements 52a-52c. Also, filter elements 62d and 62e may have a configuration similar to filter elements 62a-62c. Filter elements 62d and 62e may be formed with filter elements 62a-62c. Filter elements 62d and 62e may be placed in the same layer as filter elements 62a-56c.

The bias electrode 72a is electrically connected to the RF power supply 31 or the DC power supply 32 via the feed line 1218a. In this example, one end of the plug 54 is connected to the electrode 1216a, and the other end of the plug 54 is connected to the filter element 52d. One end of the plug 64 is connected to the filter element 52d, and the other end of the plug 64 is connected to the filter element 62d. A filter element 62d is connected to one end of the plug 76a, and a bias electrode 72a is connected to the other end of the plug 76a.

The bias electrode 72b is electrically connected to the RF power supply 31 or the DC power supply 32 via the feed line 1218b. In this example, one end of the plug 54 is connected to the electrode 1216b, and the other end of the plug 54 is connected to the filter element 52e. One end of the plug 64 is connected to the filter element 52e, and the other end of the plug 64 is connected to the filter element 62e. A filter element 62e is connected to one end of the plug 76b, and a bias electrode 72b is connected to the other end of the plug 76b.

According to the above embodiments, the filter element is arranged inside the electrostatic chuck, that is, at a position close to the electrostatic chuck electrode. Accordingly, even if an RF component is generated in the electrostatic chuck electrode by the source RF signal and/or the bias RF signal, the RF component can be attenuated inside the electrostatic chuck. This can reduce the loss of RF power in the source RF signal and/or the bias RF signal. In addition, since the RF component can be reduced from leaking from the electrostatic chuck electrode to the outside of the electrostatic chuck, it is possible to reduce the influence on the DC power supply or the like electrically connected to the electrostatic chuck electrode.

According to the above embodiment, the filter element is arranged relatively close to the temperature control module that controls the temperature of the electrostatic chuck. As a result, even if the RF signal passes through the filter element, overheating of the filter element can be suppressed.

The present disclosure may include, for example, the following configurations.

(Appendix 1)
a plasma processing chamber;
A substrate support disposed within the plasma processing chamber, the substrate support comprising:
a dielectric member having a substrate supporting surface;
a first filter element disposed within the dielectric member and having a first terminal and a second terminal;
a first electrode disposed within the dielectric member and electrically connected to the first terminal;
a substrate support having
an RF generator coupled to the plasma processing chamber and configured to generate an RF signal;
a first DC generator electrically connected to the second terminal and configured to generate a DC signal.

(Appendix 2)
2. The plasma processing apparatus according to appendix 1, wherein the first electrode includes an electrostatic chuck electrode.

(Appendix 3)
3. The plasma processing apparatus according to appendix 1 or 2, wherein the first electrode includes a bias electrode.

(Appendix 4)
The plasma processing apparatus according to appendix 1, wherein the first filter element is a low-pass filter.

(Appendix 5)
5. The plasma processing apparatus according to any one of appendices 1 to 4, wherein the first filter element includes a first resistive element.

(Appendix 6)
6. The plasma processing apparatus according to appendix 5, wherein the first resistance element is arranged perpendicular to the substrate supporting surface.

(Appendix 7)
7. The plasma processing apparatus according to appendix 5 or 6, wherein the first resistance element is arranged parallel to the substrate supporting surface.

(Appendix 8)
the first electrode is arranged parallel to the substrate supporting surface;
The first resistance element is arranged parallel to the first electrode below the first electrode,
8. The plasma processing apparatus according to appendix 7, wherein the first resistance element has the first terminal and the second terminal.

(Appendix 9)
9. The plasma processing apparatus according to appendix 8, wherein the first resistance element has a plurality of resistance wirings electrically connected in parallel between the first terminal and the second terminal.

(Appendix 10)
10. The plasma processing apparatus according to any one of Appendices 7 to 9, wherein the first resistance element has a curved line pattern in plan view of the substrate supporting surface.

(Appendix 11)
the first filter element includes a second resistive element,
The second resistance element is arranged parallel to the first resistance element below the first resistance element,
The second resistive element has a third terminal and a fourth terminal,
the third terminal is electrically connected to the first electrode through the second terminal;
11. The plasma processing apparatus according to any one of appendices 8 to 10, wherein the fourth terminal is electrically connected to the first DC generator.

(Appendix 12)
5. The plasma processing apparatus according to any one of Appendixes 1 to 4, wherein the first filter element includes a first inductor element.

(Appendix 13)
13. The plasma processing apparatus according to appendix 12, wherein the first inductor element is arranged parallel to the substrate support surface.

(Appendix 14)
the first electrode is arranged parallel to the substrate supporting surface;
the first inductor element is arranged parallel to the first electrode below the first electrode;
14. The plasma processing apparatus according to appendix 13, wherein the first inductor element has the first terminal and the second terminal.

(Appendix 15)
15. The plasma processing apparatus according to appendix 13 or 14, wherein the first inductor element has a spiral line pattern in plan view of the substrate supporting surface.

(Appendix 16)
the first filter element includes a second inductor element;
the second inductor element is arranged parallel to the first inductor element below the first inductor element;
the second inductor element has a third terminal and a fourth terminal;
the third terminal is electrically connected to the first electrode through the second terminal;
16. The plasma processing apparatus according to appendix 14 or 15, wherein the fourth terminal is electrically connected to the first DC generator.

(Appendix 17)
further comprising a second DC generator configured to generate a DC signal;
the dielectric member has a ring support surface around the substrate support surface;
The substrate support part
a second filter element disposed within the dielectric member and having a fifth terminal and a sixth terminal;
a second electrode disposed within the dielectric member and electrically connected to the fifth terminal;
has
17. The plasma processing apparatus according to any one of appendices 1 to 16, wherein the second DC generator is electrically connected to the sixth terminal.

(Appendix 18)
further comprising an RF electrode electrically connected to the RF generator;
The RF electrode includes a metal member,
18. The plasma processing apparatus according to any one of appendices 1 to 17, wherein the metal member is joined to the dielectric member.

(Appendix 19)
providing a first dielectric layer having a first side and a second side opposite the first side;
forming an electrode on the first surface;
forming a plug in the first dielectric layer, the plug being formed through the first dielectric layer, one end of the plug being connected to the electrode on the first surface; forming a plug, wherein the other end of the plug is exposed at the second surface;
providing a second dielectric layer having a third side and a fourth side opposite the third side;
forming a filter element on the third surface;
joining a second surface of the first dielectric layer and a third surface of the second dielectric layer to connect a part of the filter element and the other end of the plug; A method of manufacturing an electrostatic chuck, comprising:

Each of the above embodiments has been set forth for purposes of illustration, and various modifications may be made without departing from the scope and spirit of the present disclosure.

Reference Signs List 1 plasma processing apparatus 2 control unit 10 plasma processing chamber 30 power supply 31 RF power supply 31a first RF generation unit 31b second RF generation unit 32 DC power supply 32a First DC generator 32b Second DC generator 40 Exhaust system 42 Dielectric layer 42a Joint surface 50 Dielectric layer 50-n Dielectric sheet 52 Filter Element 521 Terminal 522 Terminal 523 Resistive wiring 524 Terminal 526 Terminal 526 Conductive wiring 53 Opening 54 Plug 60 Dielectric layer 62 Filter element 64 Plug 70 Dielectric layer 72 Dielectric layer 74 Plug 78 Dielectric layer 80 Dielectric layer 84 Plug 90 Dielectric layer 111 Main body 111a Center Area 111b... Annular area 111c... Substrate supporting surface 111d... Ring supporting surface 112... Ring assembly 1110... Base 1111... Electrostatic chuck 1111... Ceramic member 1111a... Ceramic member 1111a... Electrostatic electrode , 1111b...electrostatic electrode, 1111c...electrostatic electrode, 1112...joining member, 1116...electrode, 1118...feed line

Claims (19)

a plasma processing chamber;
A substrate support disposed within the plasma processing chamber, the substrate support comprising:
a dielectric member having a substrate supporting surface;
a first filter element disposed within the dielectric member and having a first terminal and a second terminal;
a first electrode disposed within the dielectric member and electrically connected to the first terminal;
a substrate support having
an RF generator coupled to the plasma processing chamber and configured to generate an RF signal;
a first DC generator electrically connected to the second terminal and configured to generate a DC signal. 2. The plasma processing apparatus of claim 1, wherein said first electrode comprises an electrostatic chuck electrode. 2. The plasma processing apparatus of claim 1, wherein said first electrode comprises a bias electrode. 2. The plasma processing apparatus of claim 1, wherein said first filter element is a low pass filter. 2. The plasma processing apparatus of claim 1, wherein said first filter element includes a first resistive element. 6. The plasma processing apparatus according to claim 5, wherein said first resistive element is arranged perpendicular to said substrate supporting surface. 6. The plasma processing apparatus according to claim 5, wherein said first resistance element is arranged parallel to said substrate supporting surface. the first electrode is arranged parallel to the substrate supporting surface;
The first resistance element is arranged parallel to the first electrode below the first electrode,
8. The plasma processing apparatus according to claim 7, wherein said first resistance element has said first terminal and said second terminal. 9. The plasma processing apparatus according to claim 8, wherein said first resistance element has a plurality of resistance wirings electrically connected in parallel between said first terminal and said second terminal. 10. The plasma processing apparatus according to any one of claims 7 to 9, wherein said first resistance element has a curved line pattern in plan view of said substrate supporting surface. the first filter element includes a second resistive element,
The second resistance element is arranged parallel to the first resistance element below the first resistance element,
The second resistive element has a third terminal and a fourth terminal,
the third terminal is electrically connected to the first electrode through the second terminal;
9. The plasma processing apparatus of claim 8, wherein said fourth terminal is electrically connected to said first DC generator. 2. The plasma processing apparatus of claim 1, wherein said first filter element comprises a first inductor element. 13. The plasma processing apparatus of claim 12, wherein said first inductor element is arranged parallel to said substrate support surface. the first electrode is arranged parallel to the substrate supporting surface;
the first inductor element is arranged parallel to the first electrode below the first electrode;
14. The plasma processing apparatus of claim 13, wherein said first inductor element has said first terminal and said second terminal. 15. The plasma processing apparatus according to claim 13, wherein said first inductor element has a spiral line pattern in plan view of said substrate supporting surface. the first filter element includes a second inductor element;
the second inductor element is arranged parallel to the first inductor element below the first inductor element;
the second inductor element has a third terminal and a fourth terminal;
the third terminal is electrically connected to the first electrode through the second terminal;
15. The plasma processing apparatus of claim 14, wherein said fourth terminal is electrically connected to said first DC generator. further comprising a second DC generator configured to generate a DC signal;
the dielectric member has a ring support surface around the substrate support surface;
The substrate support part
a second filter element disposed within the dielectric member and having a fifth terminal and a sixth terminal;
a second electrode disposed within the dielectric member and electrically connected to the fifth terminal;
has
2. The plasma processing apparatus according to claim 1, wherein said second DC generator is electrically connected to said sixth terminal. further comprising an RF electrode electrically connected to the RF generator;
The RF electrode includes a metal member,
2. The plasma processing apparatus according to claim 1, wherein said metal member is bonded to said dielectric member. providing a first dielectric layer having a first side and a second side opposite the first side;
forming an electrode on the first surface;
forming a plug in the first dielectric layer, the plug being formed through the first dielectric layer, one end of the plug being connected to the electrode on the first surface; forming a plug, wherein the other end of the plug is exposed at the second surface;
providing a second dielectric layer having a third side and a fourth side opposite the third side;
forming a filter element on the third surface;
joining a second surface of the first dielectric layer and a third surface of the second dielectric layer to connect a part of the filter element and the other end of the plug; A method of manufacturing an electrostatic chuck, comprising:

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