JP2023072513A - Light detection device and electronic apparatus - Google Patents

Abstract

To provide a light detection device with which electrical cross-talk in photoelectric conversion is suppressed; and an electronic apparatus using such a light detection device.SOLUTION: A light detection device is configured to comprise: a photoelectric conversion element including a photoelectric conversion part which performs photoelectric conversion; a light-receiving lens disposed in each pixel on a light-receiving surface side of the photoelectric conversion element; an entering light blocking film that is disposed opposing the light-receiving lens and is also disposed on the light-receiving lens side of the photoelectric conversion element, and that has a light inlet for the entering light condensed by the light-receiving lens; an exiting light blocking film that is disposed opposing the entering light blocking film and is also disposed on the side opposite the light-receiving lens side of the photoelectric conversion element, and that has a light outlet for light which has passed through the photoelectric conversion element; and a pixel separation wall that connects a peripheral edge of the entering light blocking film and a peripheral edge of the exiting light blocking film to each other, and that surrounds at least a portion of the photoelectric conversion element.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a photodetector such as a solid-state imaging device that suppresses optical and electrical crosstalk, and an electronic device using the photodetector.

2. Description of the Related Art Conventionally, there is a problem that color mixture occurs between pixels of a solid-state imaging device, which is an example of a photodetector, when incident light from an oblique direction enters adjacent pixels. In order to prevent such color mixture, for example, a pixel isolation portion is formed between adjacent elements.
As the structure of the pixel isolation part, a thick film of silicon (Si) constituting the pixel isolation part, RDTI (Reverse side Deep Trench Isolation), which is a structure in which an insulating trench is dug from the back surface (lower surface) of the substrate, etc. are adopted. ing.

Specifically, the following techniques have been disclosed for photodetection devices that prevent the occurrence of such "mixed colors" and improve the image quality of captured images.
Inside the semiconductor substrate, a plurality of photoelectric conversion units are provided corresponding to each of the plurality of pixels and receiving incident light on a light receiving surface. The photoelectric conversion unit is arranged in the partitioned section by dividing the pixels by the pixel separation unit embedded in the trench provided on the side of the photoelectric conversion unit on the incident light incident surface side of the semiconductor substrate. is set. It is separated from other pixels P by this. The pixel separation section is a partition that electrically separates a plurality of pixels, and is made of an insulating material or the like that blocks incident light.

JP 2012-175050 A

In the technique disclosed in Patent Document 1, the photoelectric conversion portion of each pixel is separated from adjacent pixels by a pixel separating portion. However, when electrons generated by photoelectric conversion at the side of the photoelectric conversion portion move from the photoelectric conversion portion to the pixel transistor, they move to adjacent pixels due to drift or the like, causing electrical crosstalk. have a problem.

The present disclosure has been made in view of such problems, and aims to provide a photodetector that suppresses electrical crosstalk in photoelectric conversion and an electronic device using the photodetector.

The present disclosure has been made to solve the above problems. A first aspect of the present disclosure includes a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion, and pixels on the light receiving surface side of the photoelectric conversion element. a light-receiving lens disposed for each light-receiving lens, and a light-receiving lens disposed facing the light-receiving lens, disposed on the light-receiving lens side of the photoelectric conversion element, and a light entrance for incident light condensed by the light-receiving lens and a light shielding film having a The photodetector includes a light exit light shielding film having an opening, and a pixel separation wall connecting peripheral edges of the light entrance light shielding film and the light exit light shielding film and surrounding at least a portion of the photoelectric conversion element.

Further, in the first aspect, the photoelectric conversion unit includes a photoelectric conversion tube formed by the pixel separation wall extending along the optical axis direction from the peripheral edge of the light entrance of the light shielding film. It may be arranged inside.

Moreover, in the first aspect, the pixel separation wall may surround the entire side surface of the photoelectric conversion element.

A second aspect thereof includes a photoelectric conversion element including a photoelectric conversion portion that performs photoelectric conversion, a light receiving lens provided for each pixel on the light receiving surface side of the photoelectric conversion element, and a light receiving lens provided facing the light receiving lens. a light shielding film disposed on the light receiving lens side of the photoelectric conversion element and having a light inlet for incident light condensed by the light receiving lens; The photoelectric conversion element has a light exit opening for light that has passed through the photoelectric conversion element, the peripheral edge of the light incident light shielding film or the peripheral edge of the light entrance light shielding film and the peripheral edge of the light exit opening are connected to each other, and at least the photoelectric conversion element and a pixel separation wall that partially surrounds the photoelectric conversion unit to form the photoelectric conversion unit.

In the second aspect, the pixel separation wall surrounds four side surfaces of the photoelectric conversion element and extends obliquely along the optical axis direction. The enclosed portion may be formed in a substantially square pyramid shape.

In the second aspect, the pixel separation wall surrounds four side surfaces of the photoelectric conversion element, and one of the four side surfaces of the pixel separation wall, one of which faces two side surfaces, extends in an oblique direction along the optical axis direction. , and the other two opposing side surfaces are extended along the optical axis direction, so that the portion of the photoelectric conversion element surrounded by the pixel separation wall is formed in a substantially trapezoidal shape. may

A second aspect thereof includes a photoelectric conversion element including a photoelectric conversion portion that performs photoelectric conversion, a light receiving lens provided for each pixel on the light receiving surface side of the photoelectric conversion element, and a light receiving lens provided facing the light receiving lens. a light shielding film disposed on the light receiving lens side of the photoelectric conversion element and having a light entrance for incident light condensed by the light receiving lens; facing the photoelectric conversion element, the photoelectric conversion element has a light exit opening for light passing through the photoelectric conversion element, and the peripheral edge of the light incident light shielding film or the peripheral edge of the light entrance opening and the peripheral edge of the light exit opening of the photoelectric conversion unit are connected to each other; and a pixel separation wall surrounding at least a portion of the conversion element.

In the second aspect, the pixel separation wall surrounds four side surfaces of the photoelectric conversion element and extends obliquely along the optical axis direction, and the photoelectric conversion element surrounded by the pixel separation wall may be formed in a substantially quadrangular pyramid shape.

In the second aspect, the pixel separation wall surrounds four side surfaces of the photoelectric conversion element, and one of the four side surfaces of the pixel separation wall, one of which faces two side surfaces, extends in an oblique direction along the optical axis direction. , and other two opposing side surfaces thereof extend along the optical axis direction, so that the photoelectric conversion element surrounded by the pixel separation wall may be formed in a substantially trapezoidal shape.

In the first or second aspect, the light entrance opening of the light entrance shielding film may be formed wider than the light exit opening of the light exit light shielding film or the photoelectric conversion section.

Further, in the first or second aspect, the microlens may be focused so as to converge on the light entrance of the light shielding film.

Further, in the first or second aspect, two or more of the outgoing light shielding films may be disposed facing the incoming light shielding film.

In the first or second aspect, the light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion unit may be arranged on the optical axis of the light receiving lens. good.

Further, in the first or second aspect, the light entrance opening of the light entrance light shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion section are displaced with respect to the optical axis of the light receiving lens. may be set.

Further, in the first or second aspect, the light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion section are oblique to the optical axis of the light receiving lens. may be placed in

In the first or second aspect, the light entrance opening of the light entrance shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section may be formed in a rectangular shape.

Further, in the first or second aspect, the light entrance opening of the light entrance shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section may be formed in a circular shape.

Further, in the first or second aspect, the pixel separation wall or the light shielding film is made of silicon nitride (SiN), silicon dioxide (SiO ₂ ), tungsten (W), aluminum (Al), or air. may

In the first or second aspect, the light shielding film may be made of silicon nitride (SiN), silicon dioxide (SiO ₂ ), tungsten (W), aluminum (Al), or air.

A third aspect thereof includes a photoelectric conversion element including a photoelectric conversion portion that performs photoelectric conversion, a light receiving lens provided for each pixel on the light receiving surface side of the photoelectric conversion element, and a light receiving lens provided facing the light receiving lens. a light-incident light-shielding film disposed on the light-receiving lens side of the photoelectric conversion element and having a light entrance for incident light condensed by the light-receiving lens; a light exiting light shielding film disposed on the opposite side of the photoelectric conversion element from the light receiving lens side and having a light exit opening for light that has passed through the photoelectric conversion element; A photodetector having a pixel separation wall that connects peripheral edges and surrounds at least a portion of the photoelectric conversion element, or a photoelectric conversion element that includes a photoelectric conversion unit that performs photoelectric conversion, and a light receiving surface of the photoelectric conversion element. a light-receiving lens arranged for each pixel on the side of the light-receiving lens; a light-incident light-shielding film having a light-incident light-shielding film; and a light-emitting port facing the light-incident light-shielding film for the light that has passed through the photoelectric conversion element. The electronic device includes a pixel separation wall that connects the periphery of the light entrance and the periphery of the light exit and surrounds at least a portion of the photoelectric conversion element to form the photoelectric conversion section. .

By taking the above aspect, it is possible to provide a photodetector in which electrical crosstalk in photoelectric conversion is suppressed and an electronic device using the photodetector.

1 is a cross-sectional end view of a pixel of a first embodiment of a photodetector according to the present disclosure; FIG. 1 is a plan view of a pixel of a first embodiment of a photodetector according to the present disclosure; FIG. 1A and 1B are a cross-sectional end view of two pixels and a cross-sectional end view of a light entrance and a light exit of a single pixel, showing the schematic structure of the basic form of the photodetector according to the first embodiment of the present disclosure; FIG. FIG. 3A is a cross-sectional end view of two pixels and a cross-sectional end view of a light entrance and a light exit of a single pixel, showing a schematic structure of a modified example of the first embodiment of the photodetector according to the present disclosure; FIG. 3A is a cross-sectional end view of two pixels and a cross-sectional end view of a light entrance and a light exit of a single pixel, showing a schematic structure of a second embodiment of a photodetector according to the present disclosure; FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a third embodiment of the present disclosure; FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a fourth embodiment of a photodetector according to the present disclosure; FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a fifth embodiment of a photodetector according to the present disclosure; FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a sixth embodiment of a photodetector according to the present disclosure; FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a seventh embodiment of the present disclosure; FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of an eighth embodiment of a photodetector according to the present disclosure; FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a ninth embodiment of a photodetector according to the present disclosure; FIG. 11 is a cross-sectional end view showing a schematic structure of a single pixel when an EPI process flow is used in the sixth to ninth embodiments of the photodetector according to the present disclosure; FIG. 11 is a cross-sectional end view showing a schematic structure of a single pixel when an ESS process flow is used in the sixth to ninth embodiments of the photodetector according to the present disclosure; FIG. 11A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a tenth embodiment of a photodetector according to the present disclosure; FIG. 11A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of an eleventh embodiment of a photodetector according to the present disclosure; FIG. 20 is a cross-sectional end view showing a schematic structure of a single pixel when an EPI process flow is used in the eleventh embodiment of the photodetector according to the present disclosure; FIG. 21 is a cross-sectional end view showing a schematic structure of a single pixel when an ESS process flow is used in the eleventh embodiment of the photodetector according to the present disclosure; FIG. 12A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a twelfth embodiment of the present disclosure; FIG. 20A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a thirteenth embodiment of the present disclosure; FIG. 21A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a fourteenth embodiment of a photodetector according to the present disclosure; FIG. 4 is an explanatory diagram of a method for manufacturing a photodetector according to the present disclosure by an EPI process; FIG. 3 is an explanatory diagram of a method for manufacturing a photodetector according to the present disclosure by an ESS process; FIG. 4 is a schematic explanatory diagram of etching by a cluster beam; FIG. 10 is an explanatory diagram of a processing method for forming trenches in an oblique direction using a cluster beam; 1 is a block diagram showing a configuration example of an electronic device including a photodetector according to an embodiment of the present disclosure; FIG.

Next, with reference to the drawings, modes for carrying out the present disclosure (hereinafter referred to as "embodiments") will be described in the following order. In the following drawings, the same or similar parts are denoted by the same or similar reference numerals. However, the drawings are schematic, and the dimensional ratios and the like of each part do not necessarily match the actual ones. In addition, it goes without saying that there are portions with different dimensional relationships and ratios between the drawings.
1. First Embodiment of Photodetector According to Present Disclosure2. Second Embodiment of Photodetector According to Present Disclosure3. 3. Third Embodiment of Photodetector According to Present Disclosure; Fourth Embodiment of Photodetector According to Present Disclosure5. 5. Fifth embodiment of the photodetector according to the present disclosure; Sixth Embodiment of Photodetector According to Present Disclosure7. Seventh Embodiment of Photodetector According to Present Disclosure8. 8. Eighth Embodiment of Photodetector According to Present Disclosure; Ninth Embodiment of Photodetector According to Present Disclosure 10 . Tenth Embodiment of Photodetector According to Present Disclosure 11. Eleventh Embodiment of Photodetection Device According to Present Disclosure 12. 12th embodiment of the photodetector according to the present disclosure 13. 13. Photodetector according to the thirteenth embodiment of the present disclosure. Fourteenth Embodiment of Photodetector According to Present Disclosure 15 . Method for manufacturing photodetector according to present disclosure 16 . Configuration example of electronic equipment

<1. First Embodiment of Photodetector According to Present Disclosure>
[Basic form of the first embodiment]
The basic form of the first embodiment of the photodetector 100 according to the present disclosure will be described below with reference to FIG. Here, the photodetector 100 according to the first embodiment will be described below by taking a “backside illuminated CMOS image sensor” among solid-state imaging devices as an example.

FIG. 1 is a cross-sectional end view of the X1-X1 portion of the partial plan view of the pixel P shown in FIG. In the photodetector 100, the thickness direction of the semiconductor substrate 110 (the vertical direction in FIG. 1) is defined as the vertical direction.

In the photodetector 100, as shown in FIG. 2, a plurality of pixels P are arranged in a matrix in the horizontal direction and the vertical direction in a plan view of the imaging surface. As shown in FIG. 1, the pixel P is configured such that incident light H from above is received by a photodiode 120, which is a photoelectric conversion element, and is photoelectrically converted to generate a color image signal. . Therefore, in the photodetector 100, a photodiode 120 is arranged corresponding to each pixel P. As shown in FIG.

The semiconductor substrate 110 is made of thinned monocrystalline silicon, for example. As shown in FIG. 1, the inside thereof includes a photodiode 120 corresponding to each pixel P and a pixel separation wall surrounding four side surfaces of the p-type semiconductor region 120p of each photodiode 120 along the optical axis LA direction. 130 are provided. The pixel separation walls 130 are formed in the trenches 111 formed by drilling the trenches 111 from the lower surface side of the semiconductor substrate 110 .

On the upper surface of the semiconductor substrate 110, a microlens 101 as a light receiving lens and a color filter 102 are stacked on an incoming light shielding film 104 with a planarization film 103 interposed therebetween. The incident light shielding film 104 is laminated on the semiconductor substrate 110 .

A transfer transistor gate 121 is arranged on the lower surface of the semiconductor substrate 110 . Further, as shown in FIG. 1, a wiring layer 300 including wirings 301 and 302 electrically connected to the transfer transistor gate 121 to form a circuit is stacked. A support substrate 320 is layered on the lower surface of the wiring layer 300 .
The schematic configuration of the photodetector 100 according to the first embodiment is as described above. Each component will be described in more detail below.

A microlens 101 is arranged in each pixel P corresponding to each pixel P. As shown in FIG. The microlens 101 is an upwardly convex plano-convex lens on the upper surface of the semiconductor substrate 110, and is configured to condense the incident light H of each pixel P onto the corresponding photodiode 120. As shown in FIG. Specifically, the microlens 101 forms a focal point so that the light is converged on a light entrance 104a of the light entrance shielding film 104, which will be described later. Therefore, even if the light inlet 104a is formed as a narrow small hole, the incident light H to the microlens 101 can enter the photodiode 120 without reducing the light amount. The microlens 101 is formed using an organic material such as resin, for example.

The color filter 102 includes a red filter layer 102R, a green filter layer 102G, and a blue filter layer 102B, as shown in FIG. These color filters 102 are provided corresponding to the pixels P, respectively. The red filter layer 102R, the green filter layer 102G, and the blue filter layer 102B are arranged in a so-called Bayer arrangement.

The red filter layer 102R has a high light transmittance in a wavelength band corresponding to red (for example, 625 to 740 nm), and is formed so that the incident red light H passes through the light entrance 104a of the light shielding film 104. there is

In addition, the green filter layer 102G has a high light transmittance in a wavelength band corresponding to green (for example, 500 to 565 nm), and is formed so that the green incident light H passes through the light entrance 104a of the light shielding film 104. It is

In addition, the blue filter layer 102B has a high light transmittance in a wavelength band corresponding to blue (for example, 450 to 485 nm), and is formed so that blue incident light H passes through the light entrance 104a of the light entrance shielding film 104. It is

A planarizing film 103 is laminated on the lower surface of the color filter 102 as shown in FIG. The planarization film 103 is an insulating material that transmits light. A semiconductor substrate 110 is stacked with a planarization film 103 interposed therebetween. Photodiodes 120 and the like, which are photoelectric conversion elements, are formed on the semiconductor substrate 110 .

Next, the configuration of the semiconductor substrate 110 in this embodiment will be described in more detail. FIG. 3A is a two-pixel cross-sectional end view showing the schematic structure of the first embodiment of the photodetector according to the present disclosure. FIG. 3A corresponds to FIG. However, FIG. 3A is upside down with respect to FIG. 1, and the wiring layer 300 and the support substrate 320 are omitted. Therefore, the microlens 101 faces downward. FIG. 3B is a cross-sectional end view of the light shielding film 104 on the right side of the X2-X2 portion of FIG. 3A. Also, FIG. 3C is a cross-sectional end view of the light output light shielding film 106 on the right side of the X3-X3 portion of FIG. 3A.
3A and the drawings corresponding to the end cross-sectional views of the X1-X1 portion of FIG. 2 of each embodiment described below (FIGS. 4A to 12A, 15A, 16A, 19A to 21A) The lower side of the drawing (lower side in FIG. 3A) is the incident light shielding film 104 side, and the upper side (upper side in FIG. 3A) is the rear end side of the photodiode 120 .

The light shielding film 104 allows the incident light H condensed by the microlens 101 to pass through the light inlet 104a and enter the photodiode 120, and shields other light.

The incident light shielding film 104 is disposed on the microlens 101 side (upper side) of the photodiode 120 so as to face the microlens 101, as shown in FIG. 3A. In addition, the incident light shielding film 104 may be arranged with an insulating film (not shown) such as a silicon oxide film interposed between the planarizing film 103 and the flattening film 103 . As shown in FIG. 3B, the incident light shielding film 104 is formed to have a rectangular cross-sectional shape. A rectangular light entrance 104a through which the incident light H passes is formed on the optical axis LA.

The light blocking film 104 is formed parallel to the microlenses 101 by forming the trenches 111 vertically in the microlenses 101 and then horizontally. A method for manufacturing the incident light shielding film 104 and the trench 111 will be described later.

Here, the shape of the opening of the light inlet 104a is not limited to a rectangular shape. For example, any shape such as circular, elliptical, triangular, trapezoidal, rhomboidal, fan-shaped, and star-shaped may be used.
When formed in a circle, its equivalent diameter De (equivalent diameter De=4×area/perimeter) is the same as that of a square. However, a circle can have a smaller perimeter than a square. For example, if one side of a square is W, its equivalent diameter De is W and its perimeter is 4W. On the other hand, if the diameter of a circle is W, its equivalent diameter De is W. However, the perimeter is πW, which is smaller than the square.
Further, since the microlens 101 is a plano-convex lens that is circular in plan view, the luminous intensity distribution of the condensed incident light H is concentric. Therefore, by forming the shape of the opening of the light inlet 104a in a circular shape, the light can enter without waste. Thereby, the aperture ratio can be reduced. Similarly, the shape of the opening of the light exit port 106a of the light exit light shielding film 106 is not limited to a rectangular shape, and may be circular or the like.

The incident light shielding film 104 is made of a material having light shielding and reflecting properties. Materials such as silicon nitride (SiN), silicon dioxide (SiO ₂ ), tungsten (W), aluminum (Al), or air can be used for the incident light shielding film 104 .
Since there is a large difference in refractive index between silicon and air, light that has once entered silicon is reflected as it is at the interface with air, and is repeatedly reflected inside silicon, so that incident light H can be confined. can. For this reason, using air as a material for the incident light shielding film 104 and the pixel separation wall 130 without filling the trenches 111 with anything can be considered as an option. Also, although not shown in the drawings, the portions made of metal or conductor and requiring electrical insulation are, of course, insulated by treatment with a predetermined insulating film or the like.

As shown in FIG. 3C, the outgoing light shielding film 106 has a light shielding property, and has a rectangular cross-sectional end face, similarly to the incident light shielding film 104 . A rectangular light exit opening 106a through which the incident light H passes to the light receiving surface is opened on the optical axis LA. The light exit 106a is an exit for electrons e generated by photoelectric conversion. It also serves as an exit for the incident light H that has not been photoelectrically converted. By opening the light exit opening 106a on the optical axis LA in this way, the distances between the exits of the electrons e and the incident light H and the adjacent pixels P can be evenly increased.
As shown in FIG. 3A, the outgoing light shielding film 106 is disposed facing the incident light shielding film 104 at the position of the junction surface between the p-type semiconductor region 120p and the n-type semiconductor region 120n. However, it may be arranged at a position including the n-type semiconductor region 120n.

The photodiode 120 is a photoelectric conversion element that receives incident light H and photoelectrically converts it to generate and accumulate electrons e, which are signal charges.

Specifically, as shown in FIG. 1, the photodiode 120 directs the incident light H to the pixel P through the microlens 101, the color filter 102, the planarization film 103, and the light entrance 104a of the light entrance shielding film 104. receive light through

The photodiode 120 has a p-type semiconductor as a base material, and a p-type semiconductor region 120p is formed on the lower side of FIG. 3A (upper side in FIG. 1), which is the light receiving surface side. An n-type semiconductor region 120n is formed on the opposite side of the light-receiving surface, that is, on the upper side in FIG. 3A (lower side in FIG. 1). Further, the n-type semiconductor region 120n is formed such that the impurity concentration increases with increasing distance from the light receiving surface side. By forming in this way, electrons e generated by photoelectric conversion move toward the transfer transistor gate 121, which is a region with a high impurity concentration in the n-type semiconductor region 120n, due to the difference in bandgap energy, and are accumulated there. be.

Here, when the incident light H enters the photodiode 120, photoelectric conversion is performed in the entire region of the p-type semiconductor region 120p and the n-type semiconductor region 120n of the photodiode 120, and electrons e are generated.
However, the electrons e generated by photoelectric conversion may move to the adjacent pixel P side due to drift, diffusion, or the like. When such a phenomenon occurs, electrical crosstalk occurs, resulting in so-called "mixed colors".

On the other hand, if the incident light H were not photoelectrically converted, it would pass through the photodiode 120 as it is, which is not preferable.
In this case, the number of electrons e generated by photoelectric conversion is smaller than the number of photons incident on the photodiode 120 . As a result, the quantum efficiency, which is the ratio between the number of generated electrons e and the number of incident lattices, is lowered.

Also, light that passes through the photodiode 120 without being photoelectrically converted is incident on the photodiode 120 of the adjacent pixel P, and when photoelectrically converted there, optical crosstalk (color mixture) occurs.

Therefore, in order to suppress the occurrence of electrical crosstalk and to suppress the occurrence of optical crosstalk and improve the quantum efficiency, the path length for photoelectric conversion of the incident light H in the photodiode 120 should be set to It is desirable to keep it for as long as possible. Moreover, it is desirable to configure so that the generated electron e cannot move to the adjacent pixel P. FIG.

Therefore, inside the semiconductor substrate 110, as shown in FIG. 3A, pixel separation walls 130 are provided to electrically separate the four side surfaces of the photodiodes 120 of the plurality of pixels P. As shown in FIG.

As shown in FIG. 3A, the pixel separation wall 130 is erected from the periphery of the incident light shielding film 104 provided for each pixel P, and extends downward along the optical axis LA (upward in FIG. 3A. Hereinafter, 4A to 12A, FIG. 15A, FIG. 16A, and FIG. 19A to FIG. 21A, the direction of the optical axis LA is referred to as the “downward direction”. there is The rear end of the extended pixel separation wall 130 and the output light shielding film 106 are connected to each other, and a substantially rectangular shape in which six surfaces are surrounded by the light input shielding film 104, the pixel separation wall 130, and the output light shielding film 106. photoelectric conversion unit 150 is formed.

That is, the photoelectric conversion section 150 has the light shielding film 104 at the front end, the four side surfaces of the p-type semiconductor region 120p of the photodiode 120, which is a photoelectric conversion element, surrounded by the pixel separation wall 130, and the rear end. The light shielding film 106 is disposed so as to face the light shielding film 104 to form a substantially rectangular shape.

Photoelectric conversion in the photoelectric conversion unit 150 configured in this way will be described. In this embodiment, the photoelectric conversion section 150 includes the p-type semiconductor region 120p of the photodiode 120. As shown in FIG. It may also include part of the n-type semiconductor region 120n. The incident light H condensed by the microlens 101 passes through the light inlet 104a and enters the photoelectric conversion unit 150. As shown in FIG. The incident light H that enters the photoelectric conversion unit 150 collides with the inner wall of the photoelectric conversion unit 150 and is repeatedly reflected. Here, the inner wall of the photoelectric conversion unit 150 refers to a total of six surfaces surrounding a portion of the photodiode 120, which is a photoelectric conversion element, which is composed of the four side surfaces of the incident light shielding film 104, the exiting light shielding film 106, and the pixel separation wall 130. It is the inner wall of the wall of the These inner walls are made of, for example, silicon nitride (SiN), silicon dioxide (SiO ₂ ), tungsten (W), aluminum (Al), air, or the like, and constitute reflectors.

Therefore, the incident light H that has passed through the light inlet 104a collides with the inner wall of the photoelectric conversion unit 150 and is repeatedly reflected, as shown in FIG. 3A. The incident light H is photoelectrically converted in the photodiode 120 while being repeatedly reflected. In other words, the incident light H is repeatedly reflected while colliding with the inner wall, thereby increasing the path length. Thereby, the incident light H is photoelectrically converted in the photodiode 120 at some time. Therefore, it is possible to prevent the incident light H from being photoelectrically converted in the photodiode 120 and emitted from the light exit opening 106 a of the light exit light shielding film 106 .

The electrons e generated by photoelectric conversion in this manner move in the photodiode 120 toward the transfer transistor gate 121 at the rear end where the n-type impurity concentration is high and are accumulated there. Then, the electron e is transferred to a diffusion capacitor (FD: Floating Diffusion) 122 by the operation of a transfer transistor gate 121 made of polysilicon and accumulated there. The electrons e accumulated in the diffusion capacitor 122 are transferred as image data to a signal processing section (not shown) formed in the wiring layer 300 via the via 124 and the wiring 301 by the operation of an amplification transistor (not shown) and a selection transistor (not shown). shown). 3 and subsequent drawings, the circuit configurations of the transfer transistor gate 121 and the diffusion capacitor 122 are omitted as appropriate to avoid complication.

In the first embodiment according to the present disclosure, as described above, since the photoelectric conversion unit 150 is provided, the incident light H enters the photoelectric conversion unit 150 and collides with the inner wall of the photoelectric conversion unit 150. to repeat the reflection. Thereby, a long path length is ensured, and the photodiode 120 is configured to perform photoelectric conversion.

Therefore, it is possible to prevent the incident light H from being photoelectrically converted in the photodiode 120 and emitted from the light exit opening 106 a of the light exit light shielding film 106 .
Further, the pixel separation walls 130 forming the photoelectric conversion section 150 made of a reflective electrical insulating material surround the four sides, and the light exit 106a is formed as a small hole on the optical axis LA. there is As a result, the distance to the pixel P adjacent to the light exit port 106a is increased, so that the movement direction of the electrons e generated by photoelectric conversion is restricted.

Therefore, electrons e generated by photoelectric conversion can be prevented from moving to the adjacent pixel P side, so that electrical crosstalk can be suppressed. At the same time, it is possible to suppress the occurrence of optical crosstalk.
Further, according to the configuration of the first embodiment, most of the photons incident on the photodiode 120 are photoelectrically converted in the photoelectric conversion unit 150 to generate electrons e, so that the quantum efficiency can be improved. can be done.

[Modification of First Embodiment]
Next, a modified example of the first embodiment will be described. In the basic form of the first embodiment, two adjacent transfer transistor gates 121 share one diffusion capacitor 122 as shown in FIG. 3A. On the other hand, this modification differs from the basic form in that one diffusion capacitor 122 is arranged corresponding to one transfer transistor gate 121, as shown in FIG. 4A. Other than that, it is the same as the basic model, so the explanation is omitted. Although the transfer transistor gate 121 is arranged on the right side in this figure, it may be arranged on the left side or in the center. Moreover, this modification is applicable also to each embodiment described below.

<2. Second Embodiment of Photodetector According to Present Disclosure>
Next, a second embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Here, comparing the first embodiment and the second embodiment, in the first embodiment, the light inlet 104a and the light outlet 106a are arranged on the optical axis LA of the microlens 101, respectively. there is
On the other hand, in the second embodiment, as shown in FIGS. 5A, 5B and 5C, the light entrance 104a and the light exit 106a are oblique to the optical axis LA of the microlens 101. , which is different from the first embodiment.

With this configuration, the distance from the light entrance opening 104a of the light entrance light shielding film 104 to the light exit opening 106a of the light exit light shielding film 106 is a diagonal line between the two, so that the path length of the incident light H can be increased. can.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.

5B and 5C show an example in which the light inlet 104a and the light outlet 106a on the right side of FIG. 5A are arranged obliquely with respect to the optical axis LA. On the other hand, they may be displaced and arranged at arbitrary positions. Further, the positional relationship of the light inlet 104a and the light outlet 106a with respect to the optical axis LA according to this embodiment can also be applied to other embodiments described later.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<3. Third Embodiment of Photodetector According to Present Disclosure>
Next, a third embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Here, when comparing the first embodiment and the third embodiment, in the first embodiment, as shown in FIG. A pixel separation wall 130 is erected from the top, and extends downward to form a substantially rectangular photoelectric conversion portion 150 .

On the other hand, in the third embodiment, as shown in FIG. 6A, the pixel separation wall 130 is erected from the opening edge of the light entrance opening 104a of the light entrance shielding film 104, and the n-type semiconductor region 120n extends downward. The difference from the first embodiment is that a substantially rectangular photoelectric conversion tube 151 that is smaller than the photoelectric conversion unit 150 is formed extending to a position including the . Here, the opening portion at the rear end of the photoelectric conversion tube 151 corresponds to the light output opening 106 a of the light output light shielding film 106 .

By configuring in this way, the photoelectric conversion unit 150 can be miniaturized. Further, since the opening portion at the rear end of the photoelectric conversion tube 151 is substantially on the optical axis LA of the pixel P, the distance to the adjacent pixel P can be secured. That is, the photoelectric conversion tube 151 is a compact version of the photoelectric conversion unit 150, performs photoelectric conversion inside the photoelectric conversion tube 151, and the opening at the rear end corresponds to the light exit 106a. Therefore, the photoelectric conversion tube 151 is one embodiment of the photoelectric conversion section 150 .
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.

Also, the volume of the photoelectric conversion tube 151 can be increased or decreased accordingly by adjusting the opening area of the light inlet 104a. Further, the opening area of the light inlet 104a may be formed wide, and the opening area of the rear end of the photoelectric conversion tube 151 may be formed narrower than the light inlet 104a. For example, the rear end of the photoelectric conversion tube 151 may be provided with a light exit light blocking film 106 in which the light exit opening 106a is formed narrower than the light entrance opening 104a. Note that the structure of the photoelectric conversion tube 151 is the same in other embodiments described below.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<4. Fourth Embodiment of Photodetector According to Present Disclosure>
Next, a fourth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Comparing the first embodiment and the fourth embodiment, in the fourth embodiment, as shown in FIG. It is different in that it has a large opening of approximately the same size as the rectangular inner wall to be formed. Further, in this embodiment, as shown in FIG. 7A, the pixel separation wall 130 is erected from the peripheral edge of the light inlet 104a which is wide open. Then, the pixel separation wall 130 extends obliquely downward to a position including the n-type semiconductor region 120n to surround the four side surfaces of the photodiode 120 . Accordingly, the region of the photodiode 120 surrounded by the pixel separation wall 130 is different from the first embodiment in that a photoelectric conversion portion 150 having a substantially quadrangular pyramid shape narrowed in the optical axis LA direction is formed. .

With this configuration, the direction of reflection of the incident light H on the inner wall of the photoelectric conversion unit 150 can be directed toward the incident light shielding film 104 . Therefore, the path length of the incident light H reflected on the inner wall of the photoelectric conversion section 150 can be further increased.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.

In the fourth embodiment, as shown in FIG. 7A, the four side surfaces of the pixel separation wall 130 provided upright on the periphery of the incident light shielding film 104 are obliquely extended, respectively, so that the photoelectric conversion units 150 forms a substantially quadrangular pyramid shape. However, of the four pixel separation walls 130, two opposing sides are extended obliquely and the remaining two opposing sides are extended parallel to form the photoelectric conversion part 150 in a substantially trapezoidal shape. good too.

Also, unlike the first embodiment, the focal length of the microlens 101 does not necessarily have to be precisely matched to the opening position of the light inlet 104a. Moreover, since the incident light shielding film 104 has a large opening, a sufficient amount of incident light H can be obtained.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<5. Fifth Embodiment of Photodetector According to Present Disclosure>
Next, a fifth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Comparing the first embodiment and the fifth embodiment, in the fifth embodiment, as shown in FIG. A pixel separation wall 130 is erected from the periphery of the light shielding film 104 having holes. Then, the pixel separation wall 130 extends obliquely downward to a position including the n-type semiconductor region 120n to surround the four side surfaces of the photodiode 120 . This differs from the first embodiment in that the region of the photodiode 120 surrounded by the pixel separation wall 130 is formed in a substantially quadrangular pyramid shape that narrows in the optical axis LA direction. Moreover, it is different from the fourth embodiment in that the light entrance opening 104a of the light entrance shielding film 104 is a small rectangular hole as in the first embodiment.

With this configuration, the direction of reflection of the incident light H on the inner wall of the photoelectric conversion unit 150 can be directed toward the incident light shielding film 104 . Therefore, the path length of the incident light H reflected on the inner wall of the photoelectric conversion section 150 can be further increased.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Further, similarly to the fourth embodiment, the pixel separation wall 130 surrounds the four side surfaces of the photodiode 120, and one of the four side surfaces of the pixel separation wall 130 is oblique along the optical axis direction. , and the other two opposite side surfaces are extended along the optical axis direction, so that the region of the photodiode 120 surrounded by the pixel separation wall 130 can be formed in a substantially trapezoidal shape. good.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<6. Sixth Embodiment of Photodetector According to Present Disclosure>
Next, a sixth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Here, when comparing the first embodiment and the sixth embodiment, in the sixth embodiment, as shown in FIG. It is different from the first embodiment in that it has a large opening with approximately the same size as the inner diameter of the rectangular inner wall to be formed.

With this configuration, the focal length of the microlens 101 does not necessarily have to be precisely aligned with the opening position of the light inlet 104a as in the first embodiment. Moreover, since the incident light blocking film 104 has a large opening for the incident light 104a, a sufficient amount of incident light H can be obtained.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<7. Seventh Embodiment of Photodetector According to Present Disclosure>
Next, a seventh embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Here, when comparing the first embodiment and the seventh embodiment, in the seventh embodiment, as shown in FIG. It is different from the first embodiment in that it has a large opening with approximately the same size as the inner diameter of the rectangular inner wall to be formed.

Further, as shown in FIG. 10A, the pixel separation wall 130 is erected from the peripheral edge of the light shielding film 104 provided for each pixel P, and is extended downward to form the pixel separation wall 130 p. A first light output shielding film 106 extending to a predetermined position of the semiconductor region 120p and having a light output port 106a is provided.
Furthermore, as shown in FIG. 10A, the photoelectric conversion unit 150 extends the pixel separation wall 130 downward to a position including the n-type semiconductor region 120n. Further, another second light exit light shielding film 106 having a light exit opening 106a is disposed at the rear end thereof, and is formed in a substantially rectangular shape. That is, two photoelectric conversion units 150 are provided by providing two output light shielding films 106 . The above points are different from the first embodiment.

With this configuration, the focal length of the microlens 101 does not necessarily have to be precisely aligned with the opening position of the light inlet 104a as in the first embodiment. Alternatively, the focal length may be adjusted to the light exit opening 106 a of the first light exit light shielding film 106 . Moreover, since the incident light blocking film 104 has a large opening for the incident light 104a, a sufficient amount of incident light H can be obtained.

Further, the photoelectric conversion section 150 has a section defined by the incident light blocking film 104 and the first output light blocking film 106 and a section defined by the first output light blocking film 106 and the second output light blocking film 106. has two photoelectric conversion areas. Therefore, the path length of the incident light H for photoelectric conversion can be lengthened.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<8. Eighth Embodiment of Photodetector According to Present Disclosure>
Next, an eighth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. 11 . Here, when comparing the first embodiment and the eighth embodiment, in the eighth embodiment, as shown in FIG. A pixel separation wall 130 is erected from the peripheral edge of the incident light shielding film 104 . Approximately rectangular photoelectric conversion section 150 is formed by extending this downward to a position including n-type semiconductor region 120n and arranging light output shielding film 106 having light output port 106a.

Further, as shown in FIG. 11A, the photoelectric conversion unit 150 extends the pixel separation wall 130 downward to the rear end of the photodiode 120 to surround the four side surfaces of the entire photodiode 120 and has an open rear end. It is formed in a substantially rectangular tubular body. The above points are different from the first embodiment.

With this configuration, the electrons e generated by photoelectric conversion that pass through the light exit opening 106a of the light exit light shielding film 106 are surrounded by the pixel separation walls 130 on four sides, so that the adjacent pixel P photo Migration to diode 120 is blocked.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<9. Ninth Embodiment of Photodetector According to Present Disclosure>
Next, based on FIG. 12, a ninth embodiment of the photodetector 100 according to the present disclosure will be described. Here, comparing the first embodiment and the ninth embodiment, in the ninth embodiment, as shown in FIG. A pixel separation wall 130 is erected from the peripheral edge of the incident light shielding film 104 . Approximately rectangular photoelectric conversion section 150 is formed by extending this downward to a position including n-type semiconductor region 120n and arranging light output shielding film 106 having light output port 106a.
Further, as shown in FIG. 12A, the photoelectric conversion unit 150 extends downward from the pixel separation wall 130 to the rear end of the photodiode 120 to surround the four sides of the entire photodiode 120, and the rear end is open. is formed in a substantially rectangular cylindrical body.

In addition, a pixel separation wall 130 is erected from the periphery of the light entrance 104a of the light entrance shielding film 104, and is extended downward to form a substantially square shape with an open rear end inside the photoelectric conversion section 150. A photoelectric conversion tube 151 formed in a cylindrical body is formed. That is, the pixel separation wall 130 surrounds the four side surfaces and the rear surface of the photodiode 120, and the photoelectric conversion tube is formed in the photoelectric conversion section 150 in a substantially square cylindrical shape with the rear end open. 151 is formed to form a double box structure. The above points are different from the first embodiment and the ninth embodiment.

With this configuration, the incident light H is photoelectrically converted while being reflected inside the photoelectric conversion tube 151 formed between the incident light shielding film 104 and the output light shielding film 106 . The incident light H that has passed through the photoelectric conversion tube 151 is similarly photoelectrically converted inside the photoelectric conversion unit 150 formed in the next stage.

Moreover, the electrons e generated by photoelectric conversion that have passed through the light exit port 106a are surrounded by the pixel separation walls 130 on four sides as in the eighth embodiment. movement is blocked.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

Here, the relationship between the trenches 111 of the optical conversion section 150 and the crystal structure in the sixth to ninth embodiments will be described. FIG. 13 is a cross-sectional end view of the X3-X3 portion of the single pixel P when an epitaxial (EPI) process flow is used on a silicon (100) plane substrate. .
FIG. 14 is a diagram of a silicon (111) plane substrate using an ESS (Empty Space in Silicon, hereinafter referred to as “ESS”) process flow. 3 is a cross-sectional end view of the X3-X3 portion of the pixel P; FIG.

13 and 14, the light entrance opening 104a and the light exit opening 106a are both opened on the optical axis LA of the pixel P. FIG. In the case of FIG. 14, the light inlet 104a and the light outlet 106a are arranged at an angle of 45 degrees with respect to the arrangement of the pixels P. In FIG. As described above, the shape of the opening of the light exit port 106a is not limited to a rectangle, and may be a circle or the like. Details of the EPI process flow and the ESS process flow will be described later.

<10. Tenth Embodiment of Photodetector According to Present Disclosure>
Next, a tenth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Here, when comparing the first embodiment and the tenth embodiment, in the tenth embodiment, as shown in FIG. A pixel separation wall 130 is erected from the peripheral edge of the incident light shielding film 104 . Extending downward, it surrounds the four sides of the photodiode 120 .

Furthermore, instead of the outgoing light shielding film 106 , a rear edge shielding film 107 having a transfer transistor gate 121 is arranged at the rear end of the extended pixel separation wall 130 . As a result, a substantially rectangular photoelectric conversion section 150 is formed.
That is, the pixel separation wall 130 surrounds the four side surfaces of the entire photodiode 120 , and the rear end light shielding film 107 surrounds the rear surface instead of the light output light shielding film 106 . The above points are different from the first embodiment.

With this configuration, the incident light H that has passed through the light inlet 104a is reflected between the inner walls of the pixel separation walls 130, the light shielding film 104, and the rear end shielding film 107 of the photoelectric conversion unit 150. photoelectrically converted. The electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separation walls 130, and the rear end is separated by the rear end light shielding film 107, so that the photodiode of the adjacent pixel P 120 is blocked.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<11. Eleventh Embodiment of Photodetector According to Present Disclosure>
Next, an eleventh embodiment of the photodetector 100 according to the present disclosure will be described with reference to FIG. Here, when comparing the first embodiment and the eleventh embodiment, in the eleventh embodiment, as shown in FIG. A pixel separation wall 130 is erected from the peripheral edge of the incident light shielding film 104 and extended downward to surround the four side faces of the photodiode 120 .

Furthermore, a rear light-shielding film 107 having a transfer transistor gate 121 is provided at the rear end of the extended pixel separation wall 130 . As a result, a substantially rectangular photoelectric conversion section 150 is formed.

Further, in the photoelectric conversion section 150, a light exit light shielding film 106 is arranged at a position including the n-type semiconductor region 120n of the photodiode 120 so that the light exit opening 106a is shifted from the optical axis LA. The opening position of the light exit port 106 a is preferably shifted to a position farther than the transfer transistor gate 121 .
That is, the pixel separation wall 130 and the rear light shielding film 107 surround the four side surfaces and the rear surface of the entire photodiode 120 . The above points are different from the first embodiment.

By configuring in this way, the path length can be increased. The incident light H that has passed through the light inlet 104a is photoelectrically converted while being reflected between the inner walls of the pixel separation walls 130, the light entrance shielding film 104, and the exit light shielding film 106 of the photoelectric conversion unit 150. FIG. Furthermore, the electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separation walls 130, and the rear end is separated by the rear end light shielding film 107, so that the photodiode 120 of the adjacent pixel P receives the electrons e. prevented from moving.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

Here, the relationship with the crystal structure of the trench 111 of the optical conversion portion 150 in the eleventh embodiment will be described. FIG. 17 is a cross-sectional end view of the X3-X3 portion of the single pixel P when the EPI process flow is used on the substrate of the (100) plane of silicon.
FIG. 18 is a cross-sectional end view of the X3-X3 portion of the single pixel P when the ESS process flow is used on the substrate of the (111) plane of silicon.

17 and 18 are cases in which the light exit opening 106a is opened at a position shifted from the optical axis LA of the pixel P. FIG. In the case of FIG. 18, the light outlet 106a is arranged at an angle of 45 degrees with respect to the arrangement of the pixels P. In FIG. The same applies when the opening position of the light inlet 104a is shifted from the optical axis LA. As described above, the shape of the opening of the light exit port 106a is not limited to a rectangle, and may be a circle or the like. Details of the EPI process flow and the ESS process flow will be described later.

<12. Twelfth Embodiment of Photodetector According to Present Disclosure>
Next, a twelfth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. 19 . Here, when comparing the first embodiment and the twelfth embodiment, in the twelfth embodiment, as shown in FIG. A pixel separation wall 130 is erected from the top. Extending this downward, a first light output shielding film 106 having a light output port 106a is provided at a predetermined position of the p-type semiconductor region 120p.

Further, as shown in FIG. 19A, the pixel separation wall 130 is directly extended downward, and a second light output light shielding film having a light output port 106a opened at a position including the n-type semiconductor region 120n of the photodiode 120 is formed. 106 is provided. Further, the pixel separation wall 130 is extended downward to the rear end of the photodiode 120 as it is. A rear light shielding film 107 having a transfer transistor gate 121 is provided at the rear end of the pixel separation wall 130 . Thus, a substantially rectangular photoelectric conversion portion 150 is formed. That is, the pixel separation wall 130 and the rear end light shielding film 107 surround the four side surfaces and the rear surface of the entire photodiode 120, and two photoelectric conversion units 150 are provided by providing two light output light shielding films 106. FIG. The above points are different from the first embodiment.

With this configuration, the focal length of the microlens 101 does not necessarily have to be precisely aligned with the opening position of the light inlet 104a as in the first embodiment. Alternatively, the focal length may be adjusted to the light exit opening 106 a of the first light exit light shielding film 106 . Moreover, since the incident light shielding film 104 has a large opening, a sufficient amount of incident light H can be obtained.

In addition, in this embodiment, a section defined by the incident light shielding film 104 and the first light output shielding film 106 and a section defined by the first light output shielding film 106 and the second light output shielding film 106 are provided. , the second light shielding film 106 and the rear end light shielding film 107, which are areas for performing photoelectric conversion. Therefore, the path length of the incident light H can be lengthened.

Since this embodiment is configured as described above, the incident light H that has passed through the incident light shielding film 104 is photoelectrically converted at some point in the three photoelectric conversion sections. The electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separation walls 130, and the rear end is separated by the rear end light shielding film 107, so that the photodiode of the adjacent pixel P 120 is blocked.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<13. Thirteenth Embodiment of Photodetector According to Present Disclosure>
Next, a thirteenth embodiment of the photodetector 100 according to the present disclosure will be described with reference to FIG. Here, when comparing the first embodiment and the thirteenth embodiment, in the thirteenth embodiment, as shown in FIG. A pixel separation wall 130 is erected from the periphery of the incident light shielding film 104, and extends downward to form a light output shielding film 106 having a light exit opening 106a at a position including the n-type semiconductor region 120n. It is

Furthermore, as shown in FIG. 20A, the pixel separation wall 130 is extended downward to the rear end of the photodiode 120 as it is. A rear light shielding film 107 having a transfer transistor gate 121 is provided at the rear end of the pixel separation wall 130 . Thus, a substantially rectangular photoelectric conversion portion 150 is formed. That is, the pixel separation wall 130 and the rear light shielding film 107 surround the four side surfaces and the rear surface of the entire photodiode 120 . The above points are different from the first embodiment.

By configuring in this way, the path length can be increased. The incident light H that has passed through the light inlet 104a is photoelectrically converted while being reflected between the inner wall of the photoelectric conversion unit 150, the incident light blocking film 104, and the outgoing light blocking film . The electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separating wall 130 and the outgoing light shielding film 106, and the pixels are separated by the rear edge shielding film 107 at the rear end. The photodiode 120 of pixel P is blocked from moving.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

<14. Fourteenth Embodiment of Photodetector According to Present Disclosure>
Next, a fourteenth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. Here, when comparing the first embodiment and the fourteenth embodiment, in the fourteenth embodiment, as shown in FIG. A pixel separation wall 130 is erected from the periphery of the incident light shielding film 104, and extends downward to form a light output shielding film 106 having a light exit opening 106a at a position including the n-type semiconductor region 120n. It is

Furthermore, as shown in FIG. 21A, the pixel separation wall 130 is extended downward to the rear end of the photodiode 120 as it is. A rear light shielding film 107 having a transfer transistor gate 121 is provided at the rear end of the pixel separation wall 130 . Thus, a substantially rectangular photoelectric conversion portion 150 is formed.

A pixel separation wall 130 is erected from the periphery of the light entrance port 104a of the light entrance shielding film 104, and is extended downward to form a substantially cylindrical body with an open rear end inside the photoelectric conversion unit 150. A photoelectric conversion tube 151 is formed. That is, the pixel separation wall 130 surrounds the four side surfaces and the rear surface of the photodiode 120, and the photoelectric conversion tube is formed in the photoelectric conversion section 150 in a substantially square cylindrical shape with the rear end open. 151 is formed to form a double box structure. The above points are different from the first embodiment and the ninth embodiment.

By configuring in this way, the path length can be increased. The incident light H that has passed through the light inlet 104a is photoelectrically converted while being reflected inside the photoelectric conversion tube 151 formed between the incident light shielding film 104 and the output light shielding film 106 . Further, the incident light H that has passed through the photoelectric conversion tube 151 is similarly photoelectrically converted inside the photoelectric conversion section 150 formed in the next stage.

Even if the electrons e generated by photoelectric conversion pass through the light output port 106a of the light output shielding film 106, the space of the photoelectric conversion unit 150 in the next stage is pixel-separated on four sides by the pixel separation wall 130, and the rear end is Since the pixels are separated by the rear light shielding film 107, movement to the photodiode 120 of the adjacent pixel P is prevented.
This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
Other than the above, since it is the same as the first embodiment, the description is omitted.

As described above, according to the photodetection device 100 according to the present disclosure, it is possible to provide a photodetection imaging device that suppresses electrical crosstalk. At the same time, optical crosstalk can be suppressed and quantum efficiency can be improved.

<15. Method for Manufacturing Photodetector According to Present Disclosure>
Next, a method for manufacturing the photodetector 100 according to the present disclosure will be described with reference to FIGS. 22 and 23, taking the first embodiment as an example.
FIG. 22 is an explanatory diagram of a method for manufacturing the trenches 111, the pixel separation walls 130, and the incident light shielding film 104 by the EPI process of the photodetector 100 according to the present disclosure.
23A and 23B are explanatory diagrams of a method for manufacturing the photodetector device 100 according to the present disclosure by the ESS process.

[Manufacturing method by EPI process]
First, a method for manufacturing the trenches 111, the pixel separation walls 130, and the incident light shielding film 104 by the EPI process will be described.

In FIG. 22A, a semiconductor substrate 110 is provided. As the semiconductor substrate 110, a (100) plane substrate of a silicon (Si) single crystal is used. Then, a mask 401 is formed on the semiconductor substrate 110 with a photoresist in a region to be the light entrance 104a of the light shielding film 104. As shown in FIG.

Next, in FIG. 22B, an oxide film such as silicon dioxide (SiO ₂ ) or a metal film such as tungsten (W) is formed on the semiconductor substrate 110 . This metal film becomes the incident light shielding film 104 .

Next, in FIG. 22C, the photoresist mask 401 is removed. As a result, a pattern in which the oxide film or the metal film is not formed is formed in the region of the light entrance shielding film 104 that will become the light entrance opening 104a.

Next, in FIG. 22D, silicon is grown by the EPI process on the semiconductor substrate 110 on which the pattern of the oxide film or the metal film that will be the incident light shielding film 104 is formed.

Next, in FIG. 22E, the semiconductor substrate 110 is turned over by 180 degrees, that is, turned upside down, and a mask 402 is formed on the semiconductor substrate 110 with a photoresist for regions that will become the trenches 111 of the pixel separation walls 130 .

Next, in FIG. 22F, the silicon of the semiconductor substrate 110 is dug by etching or the like. As a result, the silicon in the regions not masked by the mask 402 is removed to form the trenches 111 that will become the pixel separation walls 130 .

Next, in FIG. 22G, the mask 402 on the semiconductor substrate 110 in which the trenches 111 are formed is removed, and an oxide film or metal film is grown by an EPI process. As a result, pixel isolation walls 130 made of an oxide film or a metal film are formed inside the trenches 111 .

Through the steps described above, the trenches 111 that become the light shielding films 104 and the pixel separation walls 130 can be formed. It should be noted that other manufacturing processes can be formed by using conventional manufacturing techniques or by adding a slight change, so description thereof will be omitted.

[Manufacturing method by ESS process]
Next, a method for manufacturing the trench 111, the pixel separation wall 130, and the incident light shielding film 104 by the ESS process will be described.

In FIG. 23A, a semiconductor substrate 110 is provided. As the semiconductor substrate 110, a (111) plane substrate of a silicon (Si) single crystal is used. Then, a tetraethyl orthosilicate (TEOS: tetra ethoxy silane, hereinafter referred to as "TEOS") film is formed on the semiconductor substrate 110, and a mask 403 is formed in a region that will become the pixel separation wall 130 with a photoresist.

Next, in FIG. 23B, using the mask 403 as a mask, the TEOS film 404 and the silicon of the semiconductor substrate 110 are etched by dry processing to form trenches 111 .

Next, in FIG. 23C, the inner surface of the trench 111 is etched by chemical dry etching (CDE).

Next, in FIG. 23D, a TEOS film 404 is formed on the inner surface of the trench 111 .

Next, in FIG. 23E, the TEOS film 404 on the bottom of the trench 111 is removed by etchback.

Next, in FIG. 23F, silicon is removed from the bottom surface of the trench 111 in an inverted T shape by alkaline etching or the like. As a result, trenches 111 that become the pixel separation walls 130 and spaces that become the incident light shielding film 104 are formed.

Through the steps described above, a space of the ESS that becomes the light shielding film 104 and the pixel separation wall 130 can be formed. The space formed in this way, which becomes the trench 111 and the light shielding film 104, can serve as the pixel separation wall 130 even if the space is not filled with air. Silicon has a much higher refractive index than that of air. For example, the refractive index is about 4 when the wavelength of the incident light H is 550 nm. Therefore, since the difference in refractive index from that of air is very large, the light once incident on the silicon substrate is repeatedly reflected within the silicon substrate and does not come out to the outside. Therefore, the incident light H can be easily confined.
The manufacturing steps other than this can be manufactured by using conventional manufacturing techniques or by adding a slight change, so description thereof will be omitted.

[Manufacturing method for obliquely forming pixel separation walls in the fourth and fifth embodiments]
Next, a processing method for obliquely extending the pixel separation walls 130 on the four side surfaces of the photoelectric conversion unit 150 according to the fourth and fifth embodiments will be described. FIG. 24 is an explanatory diagram of an example of processing the semiconductor substrate 110 with a cluster beam.

In this figure, a mask 401 is formed on the surface of a semiconductor substrate 110 placed in a chamber 440 . The chamber 440 is partitioned by a collimation 441 with a nozzle 444 located to the left of the partition. A nozzle 444 ejects a cluster 450 of atoms or molecules 451 through a small hole 442 opened in collimation 441 . When the injected cluster 450 collides with the semiconductor substrate 110 whose surface is covered with the mask 401, the portion not covered with the mask 401 is etched. The trench 111 forming the pixel separation wall 130 can also be formed using such a processing method, for example.

FIG. 25 is an explanatory diagram of an example in which the semiconductor substrate 110 is obliquely etched by a cluster beam. As shown in this figure, a semiconductor substrate 110 whose surface is covered with a mask 401 is placed obliquely in a chamber 440 . Nozzle 444 projects clusters 450 of atoms or molecules 451 through small holes 442 formed in collimation 441 . When the injected cluster 450 obliquely collides with the semiconductor substrate 110 whose surface is covered with the mask 401, the portion not covered with the mask 401 is obliquely etched. In this manner, by emitting the cluster beam while the semiconductor substrate 110 is tilted, it is possible to perform oblique etching.
In the fourth and fifth embodiments, the trenches 111 for obliquely extending the pixel separation walls 130 can be formed by the processing method described above.

<16. Configuration example of electronic device>
An application example of the photodetector 100 according to the above embodiment to an electronic device will be described with reference to FIG. 26 . This application example is common to the photodetector 100 according to the first to fourteenth embodiments.

The photodetector 100 includes an image capture unit (photoelectric conversion function) such as an imaging device 200 such as a digital still camera or a video camera, a mobile terminal device having an imaging function, or a copying machine using the photodetector 100 as an image reading unit. ) can be applied to electronic equipment in general. The photodetector 100 may be formed as a single chip, or may be a packaged photodetector 100 . Further, it may be in a module form having an imaging function in which an imaging section and a signal processing section or an optical system are packaged together.

As shown in FIG. 26, an imaging device 200 as an electronic device includes an optical unit 202, a photodetector 100, a DSP (Digital Signal Processor) circuit 203 as a camera signal processing circuit, a frame memory 204, and a display unit. 205 , a recording unit 206 , an operation unit 207 , and a power supply unit 208 . The DSP circuit 203, frame memory 204, display unit 205, recording unit 206, operation unit 207 and power supply unit 208 are interconnected via a bus line 209 comprising signal lines and feed lines.

The optical unit 202 includes a plurality of lenses, takes in incident light (image light) H from a subject, and forms an image on the imaging surface of the photodetector 100 . The photodetector 100 converts the amount of incident light H imaged on the imaging surface by the optical unit 202 into an electric signal for each pixel, and outputs the electric signal as a pixel signal.

The display unit 205 is, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays moving images or still images captured by the photodetector 100 . A recording unit 206 records a moving image or still image captured by the photodetector 100 in a recording medium such as a hard disk or a semiconductor memory.

The operation unit 207 issues operation commands for various functions of the imaging apparatus 200 under user's operation. The power supply unit 208 appropriately supplies various power supplies as operating power supplies for the DSP circuit 203, the frame memory 204, the display unit 205, the recording unit 206, and the operation unit 207 to these supply targets.

According to the image pickup apparatus 200 as described above, since the light detection apparatus 100 which is thinned and miniaturized is used, it is possible to reduce the size and weight of the imaging apparatus 200 . In addition, since the degree of integration can be improved, a high-quality captured image can be obtained.

Finally, the description of each embodiment described above is an example of the present disclosure, and the present disclosure is not limited to the above-described embodiments. Therefore, it goes without saying that various modifications other than the above-described embodiments can be made in accordance with the design and the like within the scope of the technical concept of the present disclosure. In addition, the effects described in this specification are merely examples, and the present invention is not limited to these, and other effects may be provided.

Note that the present technology can also take the following configuration.
(1)
a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
a light output light shielding film disposed opposite to the light input light shielding film and disposed on a side of the photoelectric conversion element opposite to the light receiving lens side, the light output light shielding film having a light output port for light passing through the photoelectric conversion element;
a pixel separation wall connecting peripheral edges of the incident light shielding film and the exit light shielding film and surrounding at least a portion of the photoelectric conversion element;
A photodetector having
(2)
The photoelectric conversion unit includes a photoelectric conversion tube formed by the pixel separation wall extending along the optical axis direction from the peripheral edge of the light entrance of the light shielding film. ).
(3)
The photodetector according to (1) or (2), wherein the pixel separation wall surrounds the entire side surface of the photoelectric conversion element.
(4)
a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
A light exit opening for light that has passed through the photoelectric conversion element is provided facing the light entrance shielding film, and the peripheral edge of the light entrance shielding film or the periphery of the light entrance aperture of the light entrance shielding film and the periphery of the light exit aperture is provided. a pixel separation wall that connects the pixels and surrounds at least a portion of the photoelectric conversion element to form the photoelectric conversion unit;
A photodetector having
(5)
The pixel separation wall surrounds four side surfaces of the photoelectric conversion element and extends obliquely along the optical axis direction. The photodetector according to (4), which is formed in a pyramid shape.
(6)
The pixel separation wall surrounds the four side surfaces of the photoelectric conversion element, and one of the four side surfaces of the pixel separation wall, which is one of the four side surfaces, extends obliquely along the optical axis direction, The two side surfaces of the photoelectric conversion element extend along the optical axis direction, so that the portion of the photoelectric conversion element surrounded by the pixel separation wall is formed in a substantially trapezoidal shape. Photodetector.
(7)
The photodetector according to any one of (1) to (3), wherein the light entrance opening of the light entrance shielding film is wider than the light exit opening of the light exit light shielding film or the photoelectric conversion section.
(8)
The photodetector according to any one of (1) to (7), wherein the microlens is focused so as to converge on the light entrance of the light shielding film.
(9)
The photodetector according to any one of (1) to (3), (7), or (8), wherein two or more of the outgoing light shielding films facing the incident light shielding film are provided.
(10)
The light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion unit are arranged on the optical axis of the light receiving lens according to any one of (1) to (9) above. 3. The photodetector according to .
(11)
The light entrance opening of the light entrance light shielding film and the light exit light shielding film or the light exit opening of the photoelectric conversion unit are arranged to be offset from the optical axis of the light receiving lens (1) to (9). ).
(12)
The light entrance opening of the light entrance light shielding film and the light exit light shielding film or the light exit opening of the photoelectric conversion unit are disposed obliquely with respect to the optical axis of the light receiving lens. (9) The photodetector according to any one of (9).
(13)
The light detection device according to any one of (1) to (12) above, wherein the light entrance opening of the light entrance light shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section is formed in a rectangular shape.
(14)
The light detection device according to any one of (1) to (12), wherein the light entrance opening of the light entrance shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section is formed in a circular shape.
(15)
The pixel separation wall or the incident light shielding film of (1) to (14) above is formed of silicon nitride (SiN), silicon dioxide (SiO ₂ ), tungsten (W), aluminum (Al), or air. A photodetector according to any one of the preceding claims.
(16)
The outgoing light shielding film is formed of silicon nitride (SiN), silicon dioxide (SiO ₂ ), tungsten (W), aluminum (Al), or air. (15) The photodetector according to any one of (15).
(17)
a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
a light output light shielding film disposed opposite to the light input light shielding film and disposed on a side of the photoelectric conversion element opposite to the light receiving lens side, the light output light shielding film having a light output port for light passing through the photoelectric conversion element;
a pixel separation wall connecting peripheral edges of the incident light shielding film and the exit light shielding film and surrounding at least a portion of the photoelectric conversion element;
or
a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
A light exit opening for light that has passed through the photoelectric conversion element is provided facing the light entrance shielding film, and the peripheral edge of the light entrance shielding film or the periphery of the light entrance aperture of the light entrance shielding film and the periphery of the light exit aperture is provided. a pixel separation wall that connects the pixels and surrounds at least a portion of the photoelectric conversion element to form the photoelectric conversion unit;
An electronic device having a photodetector having

REFERENCE SIGNS LIST 100 photodetector 101 microlens 102 color filter 102R red filter layer 102G green filter layer 102B blue filter layer 103 planarizing film 104 light incident light shielding film 104a light entrance 106 light exit light shielding film 106a light exit 107 rear light shielding film 110 semiconductor substrate 111 trench 120 photodiode 120p p-type semiconductor region 120n n-type semiconductor region 121 transfer transistor gate 122 diffusion capacitor 124 via 130 pixel separation wall 150 photoelectric conversion unit 151 photoelectric conversion tube 200 imaging device 300 wiring layer 301 wiring 302 wiring 320 support substrate 401 Mask 402 Mask 403 Mask 404 TEOS film 440 Chamber 441 Collimation 442 Small hole 444 Nozzle 450 Cluster 451 Atom or molecule H Incident light P Pixel LA Optical axis e Electron

Claims (17)

a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
a light output light shielding film disposed opposite to the light input light shielding film and disposed on a side of the photoelectric conversion element opposite to the light receiving lens side, the light output light shielding film having a light output port for light passing through the photoelectric conversion element;
a pixel separation wall connecting peripheral edges of the incident light shielding film and the exit light shielding film and surrounding at least a portion of the photoelectric conversion element;
A photodetector having 2. The photoelectric conversion section includes a photoelectric conversion tube formed by the pixel separation wall extending along the optical axis from the periphery of the light entrance of the light shielding film. 3. The photodetector according to . 2. The photodetector according to claim 1, wherein the pixel separation wall surrounds the entire side surface of the photoelectric conversion element. a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
A light exit opening for light that has passed through the photoelectric conversion element is provided facing the light entrance shielding film, and the peripheral edge of the light entrance shielding film or the periphery of the light entrance aperture of the light entrance shielding film and the periphery of the light exit aperture is provided. a pixel separation wall that connects the pixels and surrounds at least a portion of the photoelectric conversion element to form the photoelectric conversion unit;
A photodetector having The pixel separation wall surrounds four side surfaces of the photoelectric conversion element and extends obliquely along the optical axis direction. 5. The photodetector according to claim 4, which is pyramid-shaped. The pixel separation wall surrounds the four side surfaces of the photoelectric conversion element, and one of the four side surfaces of the pixel separation wall, which is one of the four side surfaces, extends obliquely along the optical axis direction, 5. The light according to claim 4, wherein a portion of the photoelectric conversion element surrounded by the pixel separation wall is formed in a substantially trapezoidal shape by extending along the optical axis direction. detection device. 2. The photodetector according to claim 1, wherein the light entrance opening of the light entrance shielding film is wider than the light exit opening of the light exit light shielding film or the photoelectric conversion section. 2. The photodetector according to claim 1, wherein said microlens is focused so as to converge light on the light entrance of said light shielding film. 2. The photodetector according to claim 1, wherein two or more of said outgoing light shielding films are arranged opposite to said incident light shielding film. 2. The photodetector according to claim 1, wherein the light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion section are arranged on the optical axis of the light receiving lens. 2. The photodetector according to claim 1, wherein the light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion section are arranged to be shifted with respect to the optical axis of the light receiving lens. Device. 2. The light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion unit are arranged obliquely with respect to the optical axis of the light receiving lens. Photodetector. 2. The photodetector according to claim 1, wherein the light entrance opening of the light entrance shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section is formed in a rectangular shape. 2. The photodetector according to claim 1, wherein the light entrance opening of the light entrance shielding film or the light exit opening of the light exit light shielding film is formed in a circular shape. 2. The photodetector according to claim 1, wherein the pixel separation wall or the incident light shielding film is made of silicon nitride (SiN), silicon dioxide ( _SiO2 ), tungsten (W), aluminum (Al), or air. 2. The photodetector according to claim 1, wherein the outgoing light shielding film is made of silicon nitride (SiN), silicon dioxide ( _SiO2 ), tungsten (W), aluminum (Al), or air. a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
a light output light shielding film disposed opposite to the light input light shielding film and disposed on a side of the photoelectric conversion element opposite to the light receiving lens side, the light output light shielding film having a light output port for light passing through the photoelectric conversion element;
a pixel separation wall connecting peripheral edges of the incident light shielding film and the exit light shielding film and surrounding at least a portion of the photoelectric conversion element;
or
a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion;
a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens;
A light exit opening for light that has passed through the photoelectric conversion element is provided facing the light entrance shielding film, and the peripheral edge of the light entrance shielding film or the periphery of the light entrance aperture of the light entrance shielding film and the periphery of the light exit aperture is provided. a pixel separation wall that connects the pixels and surrounds at least a portion of the photoelectric conversion element to form the photoelectric conversion unit;
An electronic device having a photodetector having

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