JP2023064780A - Semiconductor light-emitting device - Google Patents

Abstract

To provide a semiconductor device having bondability and airtightness as well as a simple structure.SOLUTION: A semiconductor light-emitting device comprises: a semiconductor light-emitting element that emits an ultraviolet ray; a ceramic substrate that mounts the light-emitting element, having a pair of wires; a translucent cap that has a dome part that transmits emission light of the semiconductor light-emitting element, and an annular ring-shaped flange part provided at a bottom of the dome part; a cap junction layer that seals and bonds the flange part of the translucent cap and the substrate; and a sealed gas that fills a space defined by the substrate, the translucent cap, and the junction layer.SELECTED DRAWING: Figure 2

Description

The present invention relates to a semiconductor light-emitting device, and more particularly to a semiconductor light-emitting device in which a semiconductor light-emitting element that emits ultraviolet light is encapsulated.

Conventionally, there has been known a semiconductor device in which a semiconductor element is sealed inside a semiconductor package. In the case of a semiconductor light emitting module, a transparent window member such as glass that transmits light from the light emitting element is joined to a support on which the semiconductor light emitting element is mounted and hermetically sealed.

For example, Patent Literatures 1 and 2 disclose a semiconductor light emitting module in which a substrate provided with a recess for housing a semiconductor light emitting element is joined to a window member.
Further, Patent Literatures 3 and 4 disclose an ultraviolet light emitting device in which a mounting substrate on which an ultraviolet light emitting element is mounted, a spacer, and a cover made of glass are joined together.

JP 2015-18873 A JP 2018-93137 A JP 2016-127255 A JP 2016-127249 A

However, there is a demand for further improvements in sealing performance and bonding reliability between the substrate and the window member. A semiconductor light-emitting element that emits ultraviolet light, particularly an AlGaN-based semiconductor light-emitting element, is likely to deteriorate if airtightness is insufficient. A member is used.

Also, AlGaN-based crystals are degraded by moisture. In particular, as the emission wavelength becomes shorter, the Al composition increases and deterioration is more likely to occur. Therefore, as an airtight structure that prevents moisture from entering the package containing the light emitting element, a structure in which the substrate and the glass lid are sealed with a metal bonding material has been adopted. was there.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device capable of preventing deterioration of a light emitting element even when a substrate and a glass lid are bonded with a resin bonding member.

A semiconductor light emitting device according to a first embodiment of the present invention comprises:
a semiconductor light-emitting element that emits ultraviolet light;
a ceramic substrate having a pair of wirings on which a light emitting element is mounted;
a translucent cap having a dome portion that transmits light emitted from the semiconductor light emitting element, and an annular flange portion provided at the bottom of the dome portion;
a cap bonding layer that seals and bonds the flange portion of the translucent cap and the substrate;
a filled gas that fills a space defined by the substrate, the translucent cap, and the bonding layer;
with
The flange portion has a flat portion and an annular convex portion that protrudes from the flat portion toward the substrate and is concentric with the annular ring. placed around the perimeter,
the top of the projection is parallel to the flat surface of the flange and is in contact with at least a portion of the substrate;
A portion of the substrate in contact with the top of the convex portion is flat,
The cap bonding layer is arranged between the surface of the flange portion on the outer peripheral side of the convex portion and the upper surface of the substrate,
The filled gas contains at least oxygen.

1 is a plan view schematically showing the top surface of a semiconductor light emitting device 10 according to a first embodiment; FIG. 1 is a diagram schematically showing a side surface of a semiconductor light emitting device 10; FIG. 2 is a plan view schematically showing the back surface of the semiconductor light emitting device 10; FIG. 1 is a diagram schematically showing an internal structure of a semiconductor light emitting device 10; FIG. FIG. 4 is a perspective view schematically showing a 1/4 portion of the translucent cap 13 of the first embodiment; 1B is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 10 taken along line AA of FIG. 1A; FIG. FIG. 3 is a cross-sectional view schematically showing a state before the substrate 11 and the translucent cap 13 are joined. FIG. 3 is a cross-sectional view schematically showing a state after bonding the substrate 11 and the translucent cap 13; 4 is a partially enlarged cross-sectional view showing an enlarged cross-section of a joint portion between the substrate 11 and the flange portion 13B; FIG. It is a sectional view showing typically a section of semiconductor light-emitting device 30 by a 2nd embodiment. It is a partially enlarged cross-sectional view showing an enlarged joint portion between the substrate 11 and the flange portion 13B of the second embodiment. FIG. 11 is a partially enlarged cross-sectional view showing an enlarged joint portion between a substrate 11 and a flange portion 13B in a modified example of the second embodiment;

Preferred embodiments of the invention are described below. The embodiments described below are merely examples, and they may be modified and combined as appropriate. Also, in the following description and accompanying drawings, substantially the same or equivalent parts are denoted by the same reference numerals.
[First embodiment]
FIG. 1A is a plan view schematically showing the top surface of a semiconductor light emitting device 10 according to a first embodiment of the invention. FIG. 1B is a diagram schematically showing a side surface of the semiconductor light emitting device 10. FIG. FIG. 1C is a plan view schematically showing the back surface of the semiconductor light emitting device 10. FIG. FIG. 1D is a diagram schematically showing the internal structure of the semiconductor light emitting device 10. As shown in FIG. FIG. 1E is a perspective view schematically showing a quarter portion of the translucent cap 13. FIG. 2 is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 10 taken along line AA of FIG. 1A. It should be noted that FIG. 2 shows a half of one side of the translucent cap 13 for clarity of drawing and explanation.

As shown in FIGS. 1A and 1B, the semiconductor light emitting device 10 includes a rectangular plate-shaped substrate 11 and a translucent cap 13, which is a translucent window made of semispherical glass, and a cap bonding layer 12 (20 ) are joined together. A light-emitting element 15 that emits ultraviolet rays and a protective element 16 are mounted on the substrate 11 . The semiconductor light-emitting device 10 also has an inner space 19 surrounded by the substrate 11 and the translucent cap 13 .
The side surfaces of the substrate 11 are shown parallel to the x-direction and the y-direction, and the upper surface of the substrate 11 is shown parallel to the xy plane.

The substrate 11 has a rectangular plate-shaped base material having two parallel main surfaces, and wiring electrodes 14 on which the light emitting element 15 and the protective element 16 are mounted on one of the main surfaces. The base material of the substrate 11 is an airtight ceramic substrate that is resistant to the light emitted by the light emitting element 15 and impermeable to gases and the like (no pores penetrating between the two main surfaces). For example, ceramics such as aluminum nitride (AlN) and alumina (Al2O3) are used. Note that AlN, which has excellent thermal conductivity, is used in this embodiment.

As shown in FIG. 1D, on one main surface of the substrate 11, a first wiring electrode (anode electrode in this embodiment) 14A and a second wiring electrode (cathode electrode in this embodiment) 14B on which the light emitting element 15 is mounted are provided. (hereinafter referred to as the wiring electrode 14 unless otherwise distinguished, and the main surface on which the wiring electrode 14 is arranged is referred to as the upper surface). The other main surface (lower surface) of the substrate 11 is provided with a first mounting electrode 17A (anode side) and a second mounting electrode 17B (cathode side) for mounting the light emitting device 10 on the circuit board. The first wiring electrode 14A and the first mounting electrode 17A are electrically connected by a first connection wiring 18A, and the second wiring electrode 14B and the second mounting electrode 17B are electrically connected by a second connection wiring 18B. It is connected to the.

For the wiring electrodes 14 and the mounting electrodes 17, for example, Cu/Ni/Au or W/Ni/Au in which nickel (Ni) and gold (Au) are laminated in order on a copper (Cu) or tungsten (W) layer are used. be able to. Alternatively, NiCr/Au/Ni/Au in which Au, Ni, and Au are laminated in order on a nickel-chromium alloy (NiCr) layer can be used. Further, Cu or W can be used for the first connection wiring 18A and the second connection wiring 18B.

The light-emitting device 15 is a gallium aluminum nitride (AlGaN)-based semiconductor light-emitting device (LED) in which semiconductor structural layers including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are formed. In the light emitting element 15, a semiconductor structure layer is formed (joined) on a conductive support substrate (silicon: Si) via a reflective layer.
The light-emitting element 15 is provided with an anode electrode (not shown) on the opposite surface of the support substrate to which the semiconductor structure layer is joined (also referred to as the back surface of the light-emitting element 15), and the first wiring electrode 14A on the substrate 11 is electrically connected. properly connected. In addition, the light emitting element 15 has a cathode electrode (cathode electrode pad 15B) on the surface opposite to the surface of the semiconductor structure layer to which the support substrate is bonded (also referred to as the surface of the light emitting element 15), and the second wiring is provided via a bonding wire. It is electrically connected to electrode 14B.
The light-emitting element 15 is preferably an aluminum nitride-based light-emitting element that emits ultraviolet light with a wavelength of 265 to 415 nm. Specifically, a light-emitting element having an emission center wavelength of 265 nm, 275 nm, 355 nm, 365 nm, 385 nm, 405 nm, or 415 nm was used.
In this embodiment, a light emitting diode (LED) is used, but a semiconductor laser can also be used.
The Al composition of the semiconductor crystal constituting the aluminum nitride-based light-emitting element (UV-LED element) that emits ultraviolet rays is high, and is easily oxidized and deteriorated by oxygen (O2) and moisture (H2O).

A protection element 16 connected to the first wiring electrode 14A and the second wiring electrode 14B is provided on the substrate 11 . The protective element 16 has a function of protecting the light emitting element 15 from electrostatic breakdown. Here, a Zener diode (ZD) is used.

In the semiconductor light emitting device 10, as shown in FIG. 2, by applying a voltage to the first mounting electrode 17A and the second mounting electrode 17B, emitted light LE is emitted from the surface (light extraction surface) of the light emitting element 15. The light is radiated to the outside through the translucent cap 13 .

Next, the translucent cap 13 will be described.
As shown in FIGS. 1B and 2, the translucent cap 13 includes a semispherical dome portion 13A and a flange portion 13B provided at the bottom of the dome portion 13A. Further, as shown in FIG. 1E schematically showing the 1/4 portion of the translucent cap 13, the flange portion 13B has an annular plate shape.
The annular plate-shaped flange portion 13B has, on its bottom surface (the surface opposite to the dome portion 13A), an annular convex portion 13C (hereinafter also referred to as an annular convex portion) that is the same as the center C of the dome portion 13A. ). That is, the dome portion 13A, the flange portion 13B, and the convex portion 13C are arranged in concentric circles having the same center C when viewed from above. The outer edge (periphery) of the flange portion 13B and the inner edge (inner periphery) of the flange portion 13B are also concentric.

FIG. 3A is a cross-sectional view schematically showing a state before the substrate 11 and the translucent cap 13 are joined. FIG. 3B is a cross-sectional view schematically showing the state after the substrate 11 and the translucent cap 13 are bonded.
The convex portion 13C protrudes from the flat bottom portion of the flange portion 13B. The convex portion 13C is positioned near the center in the radial direction (width direction) of the bottom surface of the flange portion 13B. Moreover, the top of the convex portion 13</b>C projecting in an annular shape is parallel to the flat bottom portion of the flange portion 13 . Here, when the area outside the top of the projection 13C of the flange 13B is defined as the flange outside part 13D, and the area inside the top of the projection 13C is defined as the flange inside part 13E, in the present embodiment, 13E and 13D are approximately equidistant.

Moreover, the cross-sectional shape of the convex portion 13C perpendicular to the circumferential direction is a semicircular shape that is less likely to be chipped when the top portion of the convex portion 13C comes into contact with the substrate 11, as shown in FIG. 3B. The shape of the convex portion 13C can be, for example, a triangular shape, a rectangular shape, or a trapezoidal shape other than the semicircular shape.
The translucent cap 13 is made of a material that transmits the light emitted from the light emitting element 15 and seals the sealed gas, and is made of quartz glass or borosilicate glass. Although translucent ceramics can be used, a glass material having excellent shape workability is preferable.

The cap bonding layer 12 is a bonding layer that bonds the translucent cap 13 and the substrate 11 together. As shown in FIG. 3B, the cap bonding layer 12 includes a flange outer portion 13D, which is the outer peripheral side from the top of the convex portion 13C projecting from the bottom surface of the flange portion 13B, the upper surface of the substrate 11 facing the flange outer portion 13D, It has a shape (that is, an annular shape) and a size that fills a region surrounded by a vertical line extending from the outer peripheral end of the flange portion 13B. More specifically, the exposed surface (the outer surface of the cap bonding layer 12) corresponding to the vertical line extending downward from the outer peripheral end of the flange portion 13B is recessed inward. This shape reflects that the outer surface of the resin bonding material 20 before curing is concave, and the resin bonding material 20, which is the precursor of the cap bonding layer 12, crosses the boundary from the convex portion 13C to the inner space 19 during bonding. can be suppressed. This prevents the resin bonding material 20 from generating gas that deteriorates the light emitting element 15 due to ultraviolet rays.
Although FIG. 3B shows a form in which the cap bonding layer 12 fills up to the top of the convex portion 13C, it is not necessary to fill the convex portion 13C. For example, the space from the top of the convex portion 13C to the flange portion 13B may not be filled. In other words, the cap bonding layer 12 may form an annular ring that closes the inner space 19 between the flange outer portion 13D and the upper surface of the substrate 11 . That is, it suffices if the inner space 19 of the semiconductor light emitting device 10 can be hermetically sealed.
A silicone resin, an epoxy resin, or an acrylic resin can be used as the cap bonding layer 12 . Since the cap bonding layer 12 may be deteriorated when exposed to ultraviolet light, a silicone resin having excellent light resistance is preferable. In particular, silicone resins having saturated hydrocarbon-based functional groups, which are excellent in UV resistance, are suitable. For example, outside air may enter the light emitting device 10 when the cap bonding layer deteriorates.

An inner space 19 defined by the substrate 11, the translucent cap 13, and the cap bonding layer 12 is filled with a sealed gas. As the filling gas, nitrogen gas, dry air, or a mixture of nitrogen gas and 3 to 20 vol % of oxygen gas can be used. Gases other than nitrogen gas, such as argon (Ar), xenon (Xe), and neon (Ne), which are inert to the gallium nitride aluminum-based light emitting element 15 can be used. In the light-emitting device 10 using the gallium nitride aluminum-based light-emitting element 15, the light output maintenance rate of the light-emitting element 15 can be kept high by enclosing a filling gas containing oxygen gas during manufacturing. It should be noted that the oxygen gas component as the sealing gas acts to prevent the generation of inorganic carbon deposited on the light emitting surface of the light emitting element 15, and does not deteriorate the light emitting element 15. FIG.

As shown in FIG. 4, the annular convex portion 13C provided on the translucent cap 13 of the present embodiment is arranged at a distance L from the outer peripheral portion where the dome portion 13A is connected to the flange portion 13B. there is The ultraviolet rays UV guided through the dome portion 13A and reaching the flange portion 13B reach the flange portion 13B (flange inner portion 13E) on the inner peripheral side of the annular convex portion 13C, and radiate from the bottom surface of the flange portion 13B to the substrate 11. can. In other words, the cap bonding layer 12 arranged on the outer peripheral portion of the annular convex portion 13C can prevent exposure to ultraviolet rays that propagate through the dome portion 13A and reach the flange portion 13B. Therefore, resin deterioration of the cap bonding layer 12 can be prevented. Note that the distance L is greater than 0 (0<L). Preferably, the thickness is about 1/√2 times the thickness t of the dome portion 13A (L=t×1/√2) or more. Moreover, it is preferable that the thickness T of the flange portion 13B is equal to the thickness t of the dome portion 13A (T≈t) or thinner (T<t).
At the intersection of the outer surface of the dome portion 13A and the flange portion 13B, the angle formed by the tangent to the outer surface of the dome portion 13A and the flat surface of the flange portion 13B is about 5° or less. As a result, it is possible to prevent direct irradiation of the cap bonding layer 12 with the ultraviolet light UV guiding the dome portion 13A, thereby preventing deterioration of the resin.

The rear surface (the surface facing the substrate 11) of the flange portion 13B (flange inner portion 13E) may be roughened (scraped). The unevenness can improve the transmittance of ultraviolet rays UV (the amount of light reaching the substrate 11).
Further, as shown in FIG. 4, the annular projection 13C is in contact with the substrate 11 at the top of the projection 13C. With this structure, the top of the projection 13C and the substrate 11 can be brought into contact with each other, or the distance between the top of the projection 13C and the substrate 11 can be minimized. As a result, the resin bonding material 20 can be prevented from crossing over the top of the convex portion 13C, and the resin bonding material 20 is not exposed to ultraviolet rays, so that the light output of the light emitting element 15 can be maintained.

[Manufacturing Method of Light Emitting Device 10]
A method for manufacturing the light emitting device 10 will be described below.
First, a volatile solder paste containing AuSn fine particles is applied onto the first wiring electrode 14A of the substrate 11 . Next, the light emitting element 15 is placed on the volatile solder paste, and the substrate 11 is heated to 300° C. to melt and solidify the AuSn to bond the light emitting element 15 onto the first wiring electrode 14A. Note that the bonding of the protective element 16 is performed in parallel with the bonding of the light emitting element 15 . Also, the flux contained in the solder paste volatilizes during the heating of the substrate 11 .
Next, the bonding pad 15B of the upper electrode of the light emitting element 15 and the second wiring electrode 14B are electrically connected by a bonding wire 18C (Au wire).
Next, the substrate 11 to which the light emitting element 15 and the protection element 16 are bonded is heated in a nitrogen atmosphere at 320° C. for 20 seconds to volatilize residual flux components of the solder paste.

Subsequently, a resin adhesive 20 is annularly potted in a region corresponding to the outer flange portion 13D of the translucent cap 13 of the substrate 11 in an atmosphere of dry air, which is a sealed gas. Addition of a thixotropic agent and/or a thickening agent to the resin adhesive 20 can prevent deformation after potting the resin adhesive 20 .
Next, the translucent cap 13 is placed on the resin adhesive 20 so that the outer flange portion 13D of the translucent cap 13 abuts thereon, and is pressed with a force F so that the convex portion 13C contacts the substrate 11 . At this time, the resin adhesive 20 is filled between the flange outer portion 13D and the substrate 11 without crossing over the flange inner portion 13E due to the convex portion 13C of the translucent cap 13 . In addition, since the amount of potting of the resin adhesive 20 is made smaller than the volume of the space defined by the lower surface of the translucent cap outer portion 13D and the upper surface of the substrate 11, the outer surface of the resin adhesive 20 is concave and convex. Inward crossing from the vertex of 13C is prevented. Specifically, even if there is a slight gap between the top of the convex portion 13C and a part of the upper surface of the substrate 11, the resin adhesive 20 before hardening is compressed by the surface tension generated by making the outer surface of the resin adhesive 20 concave. It is possible to prevent the adhesive 20 from infiltrating into the flange inner portion 13E.

Next, the resin adhesive 20 was cured by heating to 150° C. for 30 minutes and then maintained for 60 minutes to form the cap bonding layer 12 . Since the adhesive strength of the resin adhesive 20 does not decrease even in a dry air atmosphere, the substrate 11 and the translucent cap 13 can be bonded by a simple process.
Through the above steps, the substrate 11 and the light-transmitting cap 13 are joined, and the semiconductor light-emitting device 10 in which the semiconductor light-emitting element 15 and dry air are sealed in the inner space 19 is completed.

[Second embodiment]
Next, a second embodiment will be described. The second embodiment differs from the first embodiment in that the substrate frame edge layer 31 is formed on the substrate 11 and the shape of the cap bonding layer 12 . Therefore, the parts similar to those of the first embodiment are omitted, and only the points of difference are explained.
FIG. 5 is a cross-sectional view (equivalent to FIG. 2 of the first embodiment) of the semiconductor light emitting device 30 of the second embodiment, and FIG. 6 is an enlarged view of the portion surrounded by the dashed line in FIG.

In the light emitting device 40 of the second embodiment, as shown in FIG. 6, an annular substrate frame edge layer 31 is formed on the substrate 11 facing the convex portion 13C of the translucent cap 13 . That is, the substrate 11 and the light-transmitting cap 13 are in contact with the substrate frame edge layer 31 provided on the substrate 11 and the convex portion 13C of the light-transmitting cap 31, and are surrounded by the flange outer portion 13D of the flange portion 13B and the upper surface of the substrate 11. A cap bonding layer 12 is formed in the space.

The substrate frame edge layer 31 is formed of a metal layer or a resin layer having a lower hardness than the material of the translucent cap 13, and the top of the convex portion 13C of the translucent cap 13 bites into and adheres to the substrate frame edge layer 31. ing. Therefore, it is possible to prevent the resin adhesive 20 from infiltrating the inner space 19 of the semiconductor light emitting device 40 and prevent corrosive gas from entering the inner space 19 from the outside of the semiconductor light emitting device 10 .
The substrate frame edge layer 31 can be, for example, Cu/Ni/Au, W/Ni/Au, NiCr/Au/Ni/Au. Note that the substrate frame edge layer 31 can be formed simultaneously with the wiring electrodes 14 . The outermost surface of the substrate frame edge layer 31 can be made of a noble metal such as platinum (Pt) or palladium (Pd) that does not oxidize.
Further, the substrate frame edge layer 31 can be made of thermosetting resin such as fluorine resin, silicone resin, epoxy resin, or thermoplastic resin. These resins can be formed by printing/curing, vapor deposition, welding, or the like. Considering ultraviolet light resistance, fluororesins such as polytetrafluoroethylene (PTFE), tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer (PFA), or tetrafluoroethylene/hexafluoropropylene copolymer (FEP) are preferable. .
Also, the cap connection layer 12 does not need to have a concave outer surface, and may have a fillet shape as shown in FIG.

[Modification]
A modification of the second embodiment is shown in FIG. 7 and will be described. This modification can also be applied to the first embodiment.
In this modification, an annular ultraviolet absorber 32 is provided between the upper surface of the substrate 11 and the inner flange portion 13E of the translucent cap 13 . The radial width W of the ultraviolet absorber 32 is preferably equal to or greater than the thickness t of the dome portion 13A, for example. As the ultraviolet absorbing material 32, any material capable of absorbing ultraviolet rays, such as graphite, carbon, black titanium oxide, or black aluminum oxide, may be used. It can also be formed by bonding or vapor deposition on the substrate 11 or on the bottom surface of the flange inner portion 13E.

As described in detail above, according to the present invention, it is possible to provide a semiconductor device that can be easily sealed with a resin bonding material and that does not deteriorate the resin bonding material due to the structure of the flange portion of the translucent cap.
Moreover, the described embodiment is merely an example, and the shape, material, etc. can be appropriately selected within the scope of the gist of the present invention. Further, in this specification, the term "torus" includes an elliptical ring, an oval ring, an oval ring, and the like, and the same applies to a circle, a spherical ring, and the like. Also, the term "rectangle" includes squares, rectangles, and shapes with chamfered corners.

REFERENCE SIGNS LIST 10, 30, 40 semiconductor light emitting device 11 substrate 12 cap bonding layer 13 translucent cap 13A dome portion 13B flange portion 13C convex portion 13D flange outer portion 13E flange inner portion 19 inner space 20 resin bonding material 31 substrate frame edge layer 32 ultraviolet absorption material

Claims (10)

a semiconductor light-emitting element that emits ultraviolet light;
a ceramic substrate having a pair of wirings on which a light emitting element is mounted;
a translucent cap having a dome portion that transmits light emitted from the semiconductor light emitting element, and an annular flange portion provided at the bottom of the dome portion;
a cap bonding layer that seals and bonds the flange portion of the translucent cap and the substrate;
a filled gas that fills a space defined by the substrate, the translucent cap, and the bonding layer;
with
The flange portion has a flat portion and an annular convex portion that protrudes from the flat portion toward the substrate and is concentric with the annular ring,
The convex portion is arranged on the outer periphery from the outer surface of the dome portion in contact with the flange portion,
the top of the projection is parallel to the flat surface of the flange and is in contact with at least a portion of the substrate;
A portion of the substrate in contact with the top of the convex portion is flat,
The cap bonding layer is arranged between the surface of the flange portion on the outer peripheral side of the convex portion and the upper surface of the substrate,
The semiconductor light-emitting device, wherein the filled gas contains at least oxygen. 2. The semiconductor light-emitting device according to claim 1, wherein an outer surface of said cap bonding layer between the outer portion of said translucent cap and the upper surface of said substrate is concave. 3. The semiconductor light-emitting device according to claim 1, wherein the cap bonding layer does not extend over the top of the protrusion to the inner peripheral side. 4. The semiconductor light-emitting device according to claim 1, wherein said cap bonding layer is made of silicone resin. 5. The semiconductor light emitting device according to claim 4, wherein the silicone resin has a saturated hydrocarbon functional group. (Second embodiment)
6. The semiconductor light-emitting device according to claim 1, wherein a ring-shaped substrate frame edge layer is provided on a surface of said substrate facing said convex portion of said translucent cap. 7. The semiconductor light-emitting device according to claim 6, wherein said substrate frame edge layer is made of a material having lower hardness than said translucent cap. 8. The semiconductor light-emitting device according to claim 6, wherein at least part of said convex portion bites into said substrate frame edge layer. 9. The semiconductor light emitting device according to claim 6, wherein said substrate frame edge layer is made of metal or resin. 10. The ultraviolet absorber according to any one of claims 1 to 9, wherein an ultraviolet absorber is provided between the substrate and the flange portion on the upper surface of the substrate corresponding to the extension of the dome portion. Semiconductor light emitting device.

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