JP2023046277A - magnetic sensor - Google Patents

Abstract

To provide a magnetic sensor capable of being reduced in size.SOLUTION: A magnetic sensor 1 comprises: a plurality of resistance parts composed of a plurality of MR elements 50; and a plurality of convex surfaces 305c having a structure for causing the plurality of MR element 50 to detect components particular to an object magnetic field. The plurality of MR elements 50 are divided and arranged on first to fourth areas A1-A4 corresponding to the plurality of resistance parts. Each of the first to fourth areas A1-A4 includes a first edge and a second edge positioned on both ends in a first reference direction Rx, and a third edge and a fourth edge positioned on both ends in a second reference direction Ry. An angle formed between each of the plurality of convex surfaces 305c and the first edge or the second edge is larger than an angle formed between each of the plurality of convex surfaces 305c and the third edge or the fourth edge.SELECTED DRAWING: Figure 14

Description

The present invention relates to a magnetic sensor having a structure in which a magnetoresistive effect element detects a specific component of a target magnetic field.

2. Description of the Related Art In recent years, magnetic sensors using magnetoresistive elements have been used in various applications. In a system including a magnetic sensor, it is sometimes desired to detect a magnetic field including a component in a direction perpendicular to the plane of the substrate by using a magnetoresistive element provided on the substrate. In this case, a soft magnetic body is provided for converting a magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or a magnetoresistive element is arranged on an inclined surface formed on the substrate. By doing so, it is possible to detect a magnetic field including a component in the direction perpendicular to the plane of the substrate.

Here, two directions parallel to the surface of the substrate of the magnetic sensor and perpendicular to each other are defined as the X direction and the Y direction. Generally, in a magnetic sensor provided with a plurality of magnetoresistive elements, the plurality of magnetoresistive elements are arranged in a grid along each of the X direction and the Y direction. The longitudinal direction of the magnetoresistive element coincides with the X direction or the Y direction. Further, in a magnetic sensor provided with a plurality of soft magnetic bodies, a plurality of magnetoresistive elements are arranged along each of the plurality of soft magnetic bodies. The longitudinal direction of the magnetoresistive element usually coincides with the longitudinal direction of the soft magnetic material.

Patent Document 1 describes a geomagnetic sensor in which an X-axis magnetic sensor, a Y-axis magnetic sensor, and a Z-axis magnetic sensor are provided on a support. In this geomagnetic sensor, the Z-axis magnetic sensor includes a magnetoresistive element and a soft magnetic material. The soft magnetic material converts a vertical magnetic field component parallel to the Z-axis into a horizontal magnetic field component perpendicular to the Z-axis, and applies this horizontal magnetic field component to the magnetoresistive element. The magnetoresistive element and the soft magnetic body each have a shape elongated in the Y-axis direction.

Patent Literature 2 describes a magnetic field detection unit in which a slope extending in the V-axis direction is formed. In this magnetic field detection unit, the plurality of magnetoresistive films are formed on an inclined surface and are divided into a plurality of element forming regions.

WO2011/068146 JP 2021-092526 A

In general, when there are many structures such as soft magnetic bodies and inclined surfaces that have a structure for allowing the magnetoresistive effect element to detect a specific component of the target magnetic field, it is necessary to form the magnetoresistive effect element and the like with high accuracy. becomes difficult. Therefore, in the magnetic sensor provided with the above structures, it is necessary to devise ways to reduce the number of structures. However, conventionally, such a device has not been sufficiently examined.

The present invention has been made in view of such problems, and an object of the present invention is to provide a magnetic sensor having a structure having a structure for detecting a specific component of a target magnetic field with a magnetoresistive effect element, which is miniaturized. To provide a magnetic sensor capable of

A magnetic sensor according to the present invention includes a plurality of resistance units each composed of a plurality of magnetoresistive effect elements, and a plurality of structures each having a structure for causing the plurality of magnetoresistive effect elements to detect a specific component of a target magnetic field. It has The plurality of magnetoresistive elements are divided and arranged in a plurality of regions corresponding to the plurality of resistance portions. The multiple areas are arranged to line up along the first reference direction. Each of the plurality of regions has a first edge and a second edge located at both ends in the first reference direction, and a third edge located at both ends in a second reference direction orthogonal to the first reference direction. and a fourth edge. Each of the first edge and the second edge extends along the second reference direction. Each of the plurality of structures extends in a direction crossing each of the first reference direction and the second reference direction. The angle formed by each of the plurality of structures with respect to the first edge or the second edge is larger than the angle formed with each of the plurality of structures with respect to the third edge or the fourth edge. big. The plurality of structures includes structures extending across at least two of the plurality of regions.

In the magnetic sensor of the present invention, each of the plurality of regions has a first edge and a second edge located at both ends in the first reference direction, and a second reference direction perpendicular to the first reference direction. It has a third edge and a fourth edge located at both ends of the . The angle formed by each of the plurality of structures with respect to the first edge or the second edge is larger than the angle formed with each of the plurality of structures with respect to the third edge or the fourth edge. big. Thus, according to the present invention, it is possible to realize a magnetic sensor that can be miniaturized.

1 is a perspective view showing a magnetic sensor device including a magnetic sensor according to a first embodiment of the invention; FIG. FIG. 2 is a plan view showing the magnetic sensor device shown in FIG. 1; 2 is a functional block diagram showing the configuration of the magnetic sensor device shown in FIG. 1; FIG. 1 is a circuit diagram showing a circuit configuration of a first detection circuit according to a first embodiment of the invention; FIG. 4 is a circuit diagram showing the circuit configuration of a second detection circuit according to the first embodiment of the present invention; FIG. It is a circuit diagram which shows the circuit structure of the 3rd detection circuit in the 1st Embodiment of this invention. FIG. 2 is a plan view showing part of the first chip in the first embodiment of the invention; 3 is a cross-sectional view showing part of the first chip in the first embodiment of the invention; FIG. FIG. 4 is a plan view showing part of the second chip in the first embodiment of the invention; FIG. 4 is a cross-sectional view showing part of the second chip in the first embodiment of the present invention; 1 is a side view showing a magnetoresistive element according to a first embodiment of the invention; FIG. FIG. 2 is a plan view showing an element placement region in the first embodiment of the invention; It is a top view showing a plurality of convex surfaces in a 1st embodiment of the present invention. It is explanatory drawing which shows the convex surface in the 1st Embodiment of this invention, a 1st edge, and a 4th edge. FIG. 4 is an explanatory diagram showing a plurality of magnetoresistive elements in a part of the first region according to the first embodiment of the invention; FIG. 4 is a plan view showing a plurality of convex surfaces in the magnetic sensor of the first comparative example; FIG. 11 is a plan view showing one convex surface in the magnetic sensor of the second comparative example; FIG. 11 is a plan view showing a plurality of convex surfaces in a magnetic sensor of a third comparative example; FIG. 11 is an explanatory diagram showing a plurality of magnetoresistive elements in a portion of the first region in the magnetic sensor of the fourth comparative example; FIG. 5 is a plan view showing an element placement region in a first modification of the magnetic sensor according to the first embodiment of the present invention; FIG. 10 is a plan view showing an element placement region in a second modification of the magnetic sensor according to the first embodiment of the present invention; FIG. 10 is a plan view showing an element arrangement region in the second embodiment of the invention; FIG. 12 is a plan view showing one convex surface in the magnetic sensor of the fifth comparative example; FIG. 11 is a plan view showing an element arrangement region in the third embodiment of the invention; FIG. 20 is a plan view showing one convex surface in the magnetic sensor of the sixth comparative example; FIG. 11 is a plan view showing a plurality of convex surfaces in the fourth embodiment of the invention; FIG. 11 is a functional block diagram showing the configuration of a magnetic sensor device including a magnetic sensor according to a fifth embodiment of the invention; It is a circuit diagram which shows the circuit structure of the 1st detection circuit in the 5th Embodiment of this invention. It is a circuit diagram which shows the circuit structure of the 2nd detection circuit in the 5th Embodiment of this invention. It is a circuit diagram which shows the circuit structure of the 3rd detection circuit in the 5th Embodiment of this invention. It is a top view which shows some magnetic sensors based on the 5th Embodiment of this invention. FIG. 11 is a perspective view showing a plurality of magnetoresistive elements and a plurality of yokes according to a fifth embodiment of the present invention; FIG. 11 is a side view showing a plurality of magnetoresistive elements and a plurality of yokes according to a fifth embodiment of the present invention; FIG. 11 is a plan view showing a plurality of yokes according to a fifth embodiment of the invention; FIG. 11 is a functional block diagram showing the configuration of a magnetic sensor device including a magnetic sensor according to a sixth embodiment of the invention; It is a circuit diagram which shows the circuit structure of the 1st detection circuit in the 6th Embodiment of this invention. It is a circuit diagram showing the circuit configuration of a second detection circuit in the sixth embodiment of the present invention. It is a top view which shows some 1st chips|chips in the 6th Embodiment of this invention. FIG. 11 is a cross-sectional view showing part of a first chip in a sixth embodiment of the present invention;

[First embodiment]
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor device including a magnetic sensor according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. FIG. 1 is a perspective view showing the magnetic sensor device 100. FIG. FIG. 2 is a plan view showing the magnetic sensor device 100. FIG. FIG. 3 is a functional block diagram showing the configuration of the magnetic sensor device 100. As shown in FIG.

The magnetic sensor device 100 includes the magnetic sensor 1 according to this embodiment. A magnetic sensor 1 is composed of a first chip 2 and a second chip 3 . The magnetic sensor device 100 further comprises a support 4 that supports the first and second chips 2,3. The first chip 2, the second chip 3 and the support 4 all have a rectangular parallelepiped shape. The support 4 has a reference plane 4a as an upper surface, a lower surface located on the opposite side of the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

Here, the reference coordinate system in this embodiment will be described with reference to FIGS. 1 and 2. FIG. The reference coordinate system is a coordinate system based on the magnetic sensor device 100 and is an orthogonal coordinate system defined by three axes. The reference coordinate system defines X, Y, and Z directions. The X direction, Y direction, and Z direction are orthogonal to each other. Particularly in the present embodiment, the direction perpendicular to the reference plane 4a of the support 4 and the direction from the lower surface of the support 4 toward the reference plane 4a is defined as the Z direction. The direction opposite to the X direction is -X direction, the direction opposite to Y direction is -Y direction, and the direction opposite to Z direction is -Z direction. The three axes that define the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

A direction parallel to the X direction is defined as a first reference direction Rx, and a direction parallel to the Y direction is defined as a second reference direction Ry. The reference plane 4a is a plane parallel to the first reference direction Rx and the second reference direction Ry. In addition, in this embodiment, the upper surface of the support 4 is used as a reference plane for the sake of convenience. However, the reference plane of the present invention is not limited to the upper surface of the support 4 as long as it is a plane parallel to the first reference direction Rx and the second reference direction Ry.

Hereinafter, a position ahead of the reference position in the Z direction will be referred to as "upper", and a position on the opposite side of the reference position as "upper" will be referred to as "lower". Further, with respect to the components of the magnetic sensor device 100, the surface positioned at the end in the Z direction is called the "upper surface", and the surface positioned at the end in the -Z direction is called the "lower surface". Also, the expression "when viewed from the Z direction" means viewing an object from a position distant in the Z direction.

The first chip 2 has an upper surface 2a and a lower surface located opposite to each other, and four side surfaces connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface located opposite to each other, and four side surfaces connecting the upper surface 3a and the lower surface.

The first chip 2 is mounted on the reference plane 4 a of the support 4 with the lower surface of the first chip 2 facing the reference plane 4 a. The second chip 3 is mounted on the reference plane 4a of the support 4 with the lower surface of the second chip 3 facing the reference plane 4a. The first chip 2 and the second chip 3 are bonded to the support 4 by means of adhesives 6 and 7, respectively.

The first chip 2 has a plurality of first electrode pads 21 provided on the upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on the upper surface 3a. The support 4 has a plurality of third electrode pads 41 provided on the reference plane 4a. Although not shown, in the magnetic sensor device 100, the corresponding two electrode pads among the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads 41 are connected by bonding wires. connected to each other.

The magnetic sensor 1 includes a first detection circuit 10 , a second detection circuit 20 and a third detection circuit 30 . The first chip 2 contains a first detection circuit 10 . A second chip 3 includes a second detection circuit 20 and a third detection circuit 30 .

The magnetic sensor device 100 further comprises a processor 40 . Support 4 includes a processor 40 . The first to third detection circuits 10, 20, 30 and the processor 40 connect a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads 41 and a plurality of bonding wires. connected through

Each of the first through third detection circuits 10, 20, 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. Especially in this embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive elements. The magnetoresistive element is hereinafter referred to as an MR element.

The processor 40 processes a plurality of detection signals generated by the first to third detection circuits 10, 20, and 30 to obtain a third detection signal having a correspondence relationship with components of the magnetic field in three mutually different directions at a predetermined reference position. It is configured to generate one sensed value, a second sensed value and a third sensed value. Especially in this embodiment, the three mutually different directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured by, for example, an application specific integrated circuit (ASIC).

Next, the first to third detection circuits 10, 20, 30 will be described with reference to FIGS. 3 to 10. FIG. FIG. 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. As shown in FIG. FIG. 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20. As shown in FIG. FIG. 6 is a circuit diagram showing the circuit configuration of the third detection circuit 30. As shown in FIG. FIG. 7 is a plan view showing part of the first chip 2. FIG. FIG. 8 is a cross-sectional view showing part of the first chip 2. As shown in FIG. FIG. 9 is a plan view showing part of the second chip 3. FIG. FIG. 10 is a cross-sectional view showing part of the second chip 3. As shown in FIG.

Here, as shown in FIGS. 7 and 9, the U direction and V direction are defined as follows. The U direction is a direction rotated from the X direction toward the -Y direction. The V direction is the direction rotated from the Y direction toward the X direction. Particularly in this embodiment, the U direction is the direction rotated from the X direction to the -Y direction by α, and the V direction is the direction rotated from the Y direction to the X direction by α. Note that α is an angle larger than 0° and smaller than 90°. In one example, α is 45°. The direction opposite to the U direction is the -U direction, and the direction opposite to the V direction is the -V direction.

Also, as shown in FIG. 10, the W1 direction and the W2 direction are defined as follows. The W1 direction is a direction rotated from the V direction toward the -Z direction. The W2 direction is a direction rotated from the V direction toward the Z direction. Especially in this embodiment, the W1 direction is the direction rotated from the V direction toward the −Z direction by β, and the W2 direction is the direction rotated from the V direction toward the Z direction by β. β is an angle larger than 0° and smaller than 90°. The direction opposite to the W1 direction is the -W1 direction, and the direction opposite to the W2 direction is the -W2 direction. The W1 direction and W2 direction are each orthogonal to the U direction.

The first detection circuit 10 is configured to detect a component of the target magnetic field in a direction parallel to the U direction and to generate at least one first detection signal having a corresponding relationship with this component. The second detection circuit 20 is configured to detect a component of the target magnetic field in a direction parallel to the W1 direction and to generate at least one second detection signal having a corresponding relationship with this component. The third detection circuit 30 is configured to detect a component of the target magnetic field in a direction parallel to the W2 direction and to generate at least one third detection signal having a corresponding relationship with this component.

As shown in FIG. 4, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, It includes a third resistance portion R13 and a fourth resistance portion R14. A plurality of MR elements of the first detection circuit 10 constitute first to fourth resistance sections R11, R12, R13 and R14.

The first resistance portion R11 is provided between the power supply terminal V1 and the signal output terminal E11. The second resistor portion R12 is provided between the signal output end E11 and the ground end G1. The third resistor R13 is provided between the signal output terminal E12 and the ground terminal G1. The fourth resistance portion R14 is provided between the power supply terminal V1 and the signal output terminal E12.

As shown in FIG. 5, the second detection circuit 20 includes a power terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, It includes a third resistance portion R23 and a fourth resistance portion R24. A plurality of MR elements of the second detection circuit 20 constitute first to fourth resistance sections R21, R22, R23 and R24.

The first resistance portion R21 is provided between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is provided between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is provided between the signal output terminal E22 and the ground terminal G2. The fourth resistance portion R24 is provided between the power supply terminal V2 and the signal output terminal E22.

As shown in FIG. 6, the third detection circuit 30 includes a power terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, It includes a third resistance portion R33 and a fourth resistance portion R34. A plurality of MR elements of the third detection circuit 30 constitute first to fourth resistance sections R31, R32, R33 and R34.

The first resistance portion R31 is provided between the power supply terminal V3 and the signal output terminal E31. The second resistance portion R32 is provided between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is provided between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is provided between the power supply terminal V3 and the signal output terminal E32.

A predetermined magnitude of voltage or current is applied to each of the power supply terminals V1 to V3. Each of the ground ends G1-G3 is connected to the ground.

Hereinafter, the plurality of MR elements of the first detection circuit 10 will be referred to as the plurality of first MR elements 50A, the plurality of the MR elements of the second detection circuit 20 will be referred to as the plurality of second MR elements 50B, and the The plurality of MR elements of the detection circuit 30 are referred to as a plurality of third MR elements 50C. Since the first to third detection circuits 10, 20, and 30 are components of the magnetic sensor 1, the magnetic sensor 1 includes a plurality of first MR elements 50A, a plurality of second MR elements 50B and a plurality of second MR elements. 3 MR elements 50C. Also, an arbitrary MR element is denoted by reference numeral 50. FIG.

FIG. 11 is a side view showing the MR element 50. FIG. The MR element 50 may be a spin-valve MR element or an AMR (anisotropic magnetoresistive effect) element. Especially in this embodiment, the MR element 50 is a spin-valve MR element. The MR element 50 includes a magnetization fixed layer 52 having magnetization whose direction is fixed, a free layer 54 having magnetization whose direction can be changed according to the direction of the target magnetic field, and between the magnetization fixed layer 52 and the free layer 54. and a gap layer 53 disposed thereon. The MR element 50 may be a TMR (tunnel magnetoresistive effect) element or a GMR (giant magnetoresistive effect) element. In the TMR element, gap layer 53 is a tunnel barrier layer. In the GMR element, gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the magnetization direction of the free layer 54 with respect to the magnetization direction of the magnetization fixed layer 52. When this angle is 0°, the resistance value becomes the minimum value. The resistance reaches its maximum value when the angle is 180°. In each MR element 50 , the free layer 54 has shape anisotropy such that the easy magnetization axis direction is orthogonal to the magnetization direction of the magnetization fixed layer 52 . A magnet that applies a bias magnetic field to the free layer 54 can also be used as means for setting the axis of easy magnetization in a predetermined direction in the free layer 54 .

The MR element 50 further has an antiferromagnetic layer 51 . The antiferromagnetic layer 51, magnetization fixed layer 52, gap layer 53 and free layer 54 are laminated in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and causes exchange coupling with the magnetization fixed layer 52 to fix the magnetization direction of the magnetization fixed layer 52 . The magnetization pinned layer 52 may be a so-called self-pinned pinned layer (synthetic ferri pinned layer, SFP layer). A self-pinned fixed layer has a laminated ferrimagnetic structure in which a ferromagnetic layer, a nonmagnetic intermediate layer, and a ferromagnetic layer are laminated, and the two ferromagnetic layers are antiferromagnetically coupled. If the magnetization fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 may be omitted.

Note that the arrangement of the layers 51 to 54 in the MR element 50 may be upside down from the arrangement shown in FIG.

In FIGS. 4 to 6, the filled arrows represent the magnetization direction of the magnetization pinned layer 52 of the MR element 50. As shown in FIG. The white arrow indicates the magnetization direction of the free layer 54 of the MR element 50 when no symmetrical magnetic field is applied to the MR element 50 .

In the example shown in FIG. 4, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R11 and R13 is the U direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance portions R12 and R14 is the -U direction. Also, the free layer 54 of each of the plurality of first MR elements 50A has shape anisotropy in which the direction of easy magnetization is parallel to the V direction. The direction of magnetization of the free layer 54 in each of the first and second resistance sections R11 and R12 is the V direction when no target magnetic field is applied to the first MR element 50A. The magnetization direction of the free layer 54 in each of the third and fourth resistance sections R13 and R14 is the -V direction in the above case.

In the example shown in FIG. 5, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R21 and R23 is the W1 direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance portions R22 and R24 is the -W1 direction. Also, the free layer 54 of each of the plurality of second MR elements 50B has shape anisotropy such that the direction of easy magnetization is parallel to the U direction. The direction of magnetization of the free layer 54 in each of the first and second resistance sections R21 and R22 is the U direction when no target magnetic field is applied to the second MR element 50B. The magnetization direction of the free layer 54 in each of the third and fourth resistance sections R23 and R24 is the -U direction in the above case.

In the example shown in FIG. 6, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R31 and R33 is the W2 direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance portions R32 and R34 is the -W2 direction. Also, the free layer 54 of each of the plurality of third MR elements 50C has shape anisotropy such that the direction of easy magnetization is parallel to the U direction. The direction of magnetization of the free layer 54 in each of the first and second resistance sections R31 and R32 is the U direction when no target magnetic field is applied to the third MR element 50C. The magnetization direction of the free layer 54 in each of the third and fourth resistance sections R33 and R34 is the -U direction in the above case.

The magnetic sensor 1 applies a magnetic field in a predetermined direction to the free layer 54 of each of the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C. includes a magnetic field generator configured to In this embodiment, the magnetic field generator includes a first coil 70 that applies a magnetic field in a predetermined direction to the free layer 54 of each first MR element 50A, and a plurality of second MR elements 50B. and a second coil 80 for applying a magnetic field in a predetermined direction to the free layer 54 of each of the plurality of third MR elements 50C. The first chip 2 contains a first coil 70 . A second chip 3 includes a second coil 80 .

Note that the direction of magnetization of the magnetization fixed layer 52 and the direction of the axis of easy magnetization of the free layer 54 may be slightly deviated from the above directions from the viewpoint of the accuracy of manufacturing the MR element 50 and the like. Also, the magnetization of the magnetization fixed layer 52 may be configured to include a magnetization component whose main component is the direction described above. In this case, the magnetization direction of the magnetization pinned layer 52 is the above-described direction or substantially the above-described direction.

Specific structures of the first chip 2 and the second chip 3 will be described in detail below. FIG. 8 shows a portion of the cross section at the position indicated by line 8-8 in FIG.

The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 207, 208, 209, 210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, and a plurality of lower coils. It includes an element 71 and a plurality of upper coil elements 72 . It is assumed that the upper surface 201a of the substrate 201 is parallel to the XY plane. The Z direction is also one direction perpendicular to the top surface 201 a of the substrate 201 . Note that the coil element is a part of the winding of the coil.

An insulating layer 202 is disposed over the substrate 201 . A plurality of lower coil elements 71 are arranged on the insulating layer 202 . The insulating layer 203 is arranged around the plurality of lower coil elements 71 on the insulating layer 202 . An insulating layer 204 is disposed over the plurality of lower coil elements 71 and the insulating layer 203 .

A plurality of lower electrodes 61A are arranged on the insulating layer 204 . The insulating layer 207 is arranged on the insulating layer 204 and around the plurality of lower electrodes 61A. The plurality of first MR elements 50A are arranged on the plurality of lower electrodes 61A. The insulating layer 208 is arranged on the plurality of lower electrodes 61A and the insulating layer 207 and around the plurality of first MR elements 50A. A plurality of upper electrodes 62A are disposed over the plurality of first MR elements 50A and the insulating layer 208. As shown in FIG. The insulating layer 209 is arranged on the insulating layer 208 and around the plurality of upper electrodes 62A.

The insulating layer 210 is arranged on the plurality of upper electrodes 62A and the insulating layer 209 . A plurality of upper coil elements 72 are disposed on insulating layer 210 . The first chip 2 may further include an insulating layer (not shown) covering the plurality of upper coil elements 72 and the insulating layer 210 . 7 shows the insulating layer 204, the plurality of first MR elements 50A, and the plurality of upper coil elements 72 among the constituent elements of the first chip 2. As shown in FIG.

The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surface of each of the plurality of lower electrodes 61A is also parallel to the XY plane. Also, the reference plane 4a is parallel to the XY plane. Therefore, in the above state, it can be said that the plurality of first MR elements 50A are arranged on a plane parallel to the reference plane 4a.

As shown in FIG. 7, the plurality of first MR elements 50A are arranged in parallel in the U direction and the V direction. A plurality of first MR elements 50A are connected in series by a plurality of lower electrodes 61A and a plurality of upper electrodes 62A.

Here, a method of connecting the plurality of first MR elements 50A will be described in detail with reference to FIG. In FIG. 11, reference numeral 61 denotes a lower electrode corresponding to an arbitrary MR element 50, and reference numeral 62 denotes an upper electrode corresponding to an arbitrary MR element 50. FIG. As shown in FIG. 11, each lower electrode 61 has an elongated shape. A gap is formed between two lower electrodes 61 adjacent in the longitudinal direction of the lower electrodes 61 . On the upper surface of the lower electrode 61, the MR elements 50 are arranged near both ends in the longitudinal direction. Each upper electrode 62 has an elongated shape, and is arranged on two lower electrodes 61 adjacent in the longitudinal direction of the lower electrode 61 to electrically connect two adjacent MR elements 50 to each other.

Although not shown, one MR element 50 positioned at the end of a row of a plurality of MR elements 50 is adjacent to a plurality of other MR elements 50 in a direction crossing the longitudinal direction of the lower electrode 61. , is connected to another MR element 50 located at the end of the column. These two MR elements 50 are connected to each other by electrodes (not shown). The electrodes (not shown) may be electrodes that connect the bottom surfaces or the top surfaces of the two MR elements 50 .

When the MR element 50 shown in FIG. 11 is the first MR element 50A, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61A, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62A. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the V direction.

Each of the multiple upper coil elements 72 extends in a direction parallel to the Y direction. Also, the plurality of upper coil elements 72 are arranged so as to line up in the X direction. Particularly in this embodiment, two upper coil elements 72 overlap each of the plurality of first MR elements 50A when viewed in the Z direction.

Each of the multiple lower coil elements 71 extends in a direction parallel to the Y direction. Also, the plurality of lower coil elements 71 are arranged so as to line up in the X direction. The shape and arrangement of the plurality of lower coil elements 71 may be the same as or different from the shape and arrangement of the plurality of upper coil elements 72 .

In the example shown in FIGS. 7 and 8, the plurality of lower coil elements 71 and the plurality of upper coil elements 72 are arranged parallel to the X direction with respect to the free layer 54 of each of the plurality of first MR elements 50A. are electrically connected to form a first coil 70 that applies a magnetic field of . Also, the first coil 70 applies, for example, a magnetic field in the X direction to the free layers 54 in the first and second resistance sections R11 and R12, and the free layers 54 in the third and fourth resistance sections R13 and R14. It may be configured so that a magnetic field in the −X direction can be applied to the layer 54 . Also, the first coil 70 may be controlled by the processor 40 .

Next, the structure of the second chip 3 will be described with reference to FIGS. 9 and 10. FIG. FIG. 10 shows a portion of the cross section at the position indicated by line 10--10 in FIG.

The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, and 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, and a plurality of lower electrodes 61C. It includes an upper electrode 62 B, a plurality of upper electrodes 62 C, a plurality of lower coil elements 81 and a plurality of upper coil elements 82 . It is assumed that the upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also one direction perpendicular to the top surface 301 a of the substrate 301 .

An insulating layer 302 is disposed over the substrate 301 . A plurality of lower coil elements 81 are arranged on the insulating layer 302 . The insulating layer 303 is arranged around the plurality of lower coil elements 81 on the insulating layer 302 . Insulating layers 304 and 305 are laminated in this order on the plurality of lower coil elements 81 and insulating layer 303 .

A plurality of lower electrodes 61 B and a plurality of lower electrodes 61 C are arranged on the insulating layer 305 . The insulating layer 307 is arranged on the insulating layer 305 around the plurality of lower electrodes 61B and around the plurality of lower electrodes 61C. A plurality of second MR elements 50B are arranged on a plurality of lower electrodes 61B. A plurality of third MR elements 50C are arranged on a plurality of lower electrodes 61C. The insulating layer 308 is arranged on the plurality of lower electrodes 61B, the plurality of lower electrodes 61C and the insulating layer 307 around the plurality of second MR elements 50B and the plurality of third MR elements 50C. A plurality of upper electrodes 62B are disposed over the plurality of second MR elements 50B and the insulating layer 308 . A plurality of upper electrodes 62C are disposed over the plurality of third MR elements 50C and the insulating layer 308. As shown in FIG. The insulating layer 309 is arranged on the insulating layer 308 around the plurality of upper electrodes 62B and around the plurality of upper electrodes 62C.

The insulating layer 310 is arranged on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C and the insulating layer 309. As shown in FIG. A plurality of upper coil elements 82 are disposed on insulating layer 310 . The second chip 3 may further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310 .

The second chip 3 includes a support member that supports the plurality of second MR elements 50B and the plurality of third MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301 a of the substrate 301 . Especially in this embodiment, the support member is constituted by the insulating layer 305 . 9 shows the insulating layer 305, the plurality of second MR elements 50B, the plurality of third MR elements 50C, and the plurality of upper coil elements 82 among the constituent elements of the second chip 3. FIG.

The insulating layer 305 has a plurality of convex surfaces 305c projecting in a direction away from the upper surface 301a of the substrate 301 (Z direction). Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surface 305c is a triangular roof shape formed by moving the triangular shape of the convex surface 305c shown in FIG. 10 along the direction parallel to the U direction. Also, the plurality of convex surfaces 305c are arranged in a direction parallel to the V direction.

Here, attention is paid to an arbitrary one convex surface 305c among the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface forming a part of the convex surface 305c on the V direction side. The second inclined surface 305b is a surface forming a part of the convex surface 305c on the -V direction side.

A top surface 301a of the substrate 301 is parallel to the XY plane. Also, the reference plane 4a is parallel to the XY plane. Each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to each of the upper surface 301a of the substrate 301 and the reference plane 4a. The second slanted surface 305b faces in a different direction than the first slanted surface 305a. In the VZ cross section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b becomes smaller as the distance from the upper surface 301a of the substrate 301 increases.

In this embodiment, since there are a plurality of convex surfaces 305c, there are a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b. The insulating layer 305 has a plurality of first slanted surfaces 305a and a plurality of second slanted surfaces 305b.

The plurality of lower electrodes 61B are arranged on the plurality of first inclined surfaces 305a. The plurality of lower electrodes 61C are arranged on the plurality of second inclined surfaces 305b. As described above, each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. The upper surface of each of the plurality of lower electrodes 61C is also inclined with respect to the XY plane. Also, the reference plane 4a is parallel to the XY plane. Therefore, it can be said that the plurality of second MR elements 50B and the plurality of third MR elements 50C are arranged on an inclined plane with respect to the reference plane 4a. The insulating layer 305 is a member for supporting each of the plurality of second MR elements 50B and the plurality of third MR elements 50C so as to be inclined with respect to the reference plane 4a.

At least a portion of each of the plurality of first inclined surfaces 305a may be a plane parallel to the U direction and the W1 direction. At least a portion of each of the plurality of second inclined surfaces 305b may be a plane parallel to the U direction and the W2 direction.

Also, the convex surface 305c may be a semi-cylindrical curved surface formed by moving a curved shape (arch shape) along a direction parallel to the U direction. In this case, the first inclined surface 305a becomes a curved surface. The second MR element 50B curves along the curved surface (first inclined surface 305a). Even in this case, for convenience, the magnetization direction of the magnetization fixed layer 52 of the second MR element 50B is defined as a linear direction as described above. Similarly, the second inclined surface 305b is curved. The third MR element 50C curves along the curved surface (second inclined surface 305b). Even in this case, for convenience, the magnetization direction of the magnetization pinned layer 52 of the third MR element 50C is defined as a linear direction as described above.

Although not shown, the insulating layer 305 also has flat surfaces surrounding the plurality of convex surfaces 305c. The multiple convex surfaces 305c may protrude in the Z direction from the flat surface. Also, the plurality of convex surfaces 305c may be arranged at predetermined intervals so that a flat surface is formed between two adjacent convex surfaces 305c. Alternatively, the insulating layer 305 may have a groove recessed in the -Z direction from the flat surface. In this case, the plurality of convex surfaces 305c may exist within the groove.

As shown in FIG. 9, the plurality of second MR elements 50B are arranged in parallel in the U direction and the V direction. A plurality of second MR elements 50B are arranged in a row on one first inclined surface 305a. Similarly, the plurality of third MR elements 50C are arranged so as to line up in plural in each of the U direction and the V direction. A plurality of third MR elements 50C are arranged in a row on one second inclined surface 305b. In this embodiment, the rows of the plurality of second MR elements 50B and the rows of the plurality of third MR elements 50C are alternately arranged in the direction parallel to the V direction.

A plurality of second MR elements 50B are connected in series by a plurality of lower electrodes 61B and a plurality of upper electrodes 62B. The above description of the connection method for the plurality of first MR elements 50A also applies to the connection method for the plurality of second MR elements 50B. When the MR element 50 shown in FIG. 11 is the second MR element 50B, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61B, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62B. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

Similarly, a plurality of third MR elements 50C are connected in series by a plurality of lower electrodes 61C and a plurality of upper electrodes 62C. The above description of the connection method for the plurality of first MR elements 50A also applies to the connection method for the plurality of third MR elements 50C. When the MR element 50 shown in FIG. 11 is the third MR element 50C, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61C, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62C. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Also, the plurality of upper coil elements 82 are arranged so as to line up in the X direction. Particularly in this embodiment, when viewed from the Z direction, two upper coil elements 82 overlap each of the plurality of second MR elements 50B and the plurality of third MR elements 50C.

Each of the plurality of lower coil elements 81 extends in a direction parallel to the Y direction. Also, the plurality of lower coil elements 81 are arranged so as to line up in the X direction. The shape and arrangement of the plurality of lower coil elements 81 may be the same as or different from the shape and arrangement of the plurality of upper coil elements 82 .

9 and 10, the plurality of lower coil elements 81 and the plurality of upper coil elements 82 are arranged on the free layer 54 of each of the plurality of second MR elements 50B and the plurality of third MR elements 50C. On the other hand, they are electrically connected to form a second coil 80 that applies a magnetic field parallel to the X direction. Also, the second coil 80 is, for example, free-flowing in the first and second resistance parts R21, R22 of the second detection circuit 20 and the first and second resistance parts R31, R32 of the third detection circuit 30. A magnetic field in the X direction is applied to the layer 54, and the third and fourth resistors R23, R24 of the second detection circuit 20 and the third and fourth resistors R33, R34 of the third detection circuit 30 may be configured such that a magnetic field in the -X direction can be applied to the free layer 54 in . Second coil 80 may also be controlled by processor 40 .

Next, the arrangement of the plurality of second MR elements 50B and the plurality of third MR elements 50C will be described with reference to FIG. FIG. 12 is a plan view showing an element placement region. The second chip 3 has an element arrangement area A0 for arranging a plurality of second MR elements 50B and a plurality of third MR elements 50C. Since the second chip 3 is a component of the magnetic sensor 1, it can be said that the magnetic sensor 1 has the element arrangement area A0. In this embodiment, the element placement area A0 and a plurality of areas described later are defined as planar areas parallel to the XY plane. The plurality of second MR elements 50B and the plurality of third MR elements 50C overlap the element arrangement area A0 when viewed from the Z direction. In this embodiment, it is assumed that the element placement region A0 is on the upper surface of the insulating layer 305 for the sake of convenience.

The ratio of the area of the element placement region A0 to the area of the upper surface 3a of the second chip 3 is 2% or more. This percentage may be in the range of 10-90% or in the range of 45-75%. Further, the dimension in the first reference direction Rx of the element arrangement region A0 may be larger than the dimension in the second reference direction Ry.

The element placement area A0 includes a first area A1, a second area A2, a third area A3, and a fourth area A4. The first region A1 is a region corresponding to the first resistance sections R21 and R31. The second area A2 is an area corresponding to the second resistance sections R22 and R32. The third area A3 is an area corresponding to the third resistance portions R23 and R33. A fourth region A4 is a region corresponding to the fourth resistance portions R24 and R34. Each of the first to fourth regions A1 to A4 may have a dimension in the first reference direction Rx larger than a dimension in the second reference direction Ry.

The plurality of second MR elements 50B are divided and arranged in first to fourth regions A1 to A4. The second MR element 50B forming the first resistance section R21 is arranged in the first region A1. The second MR element 50B forming the second resistance section R22 is arranged in the second region A2. The second MR element 50B forming the third resistance section R23 is arranged in the third region A3. The second MR element 50B forming the fourth resistor portion R24 is arranged in the fourth region A4.

The plurality of third MR elements 50C are divided and arranged in first to fourth regions A1 to A4. The third MR element 50C forming the first resistance section R31 is arranged in the first region A1. The third MR element 50C forming the second resistance section R32 is arranged in the second region A2. The third MR element 50C forming the third resistor portion R33 is arranged in the third region A3. The third MR element 50C forming the fourth resistance section R34 is arranged in the fourth region A4.

Next, the arrangement of the first to fourth areas A1 to A4 will be described with reference to FIG. The first to fourth regions A1 to A4 are arranged side by side along the first reference direction Rx. In the example shown in FIG. 12, the first to fourth regions A1 to A4 extend from the −X direction side edge of the element placement region A0 toward the X direction side edge of the element placement region A0. , A3, A1, and A4. However, in the present invention, the order of arranging the first to fourth areas A1 to A4 is not limited to this example.

In FIG. 12, the point labeled C1 indicates the center of gravity of the first area A1 when viewed from the Z direction. A point labeled C2 indicates the center of gravity of the second area A2 when viewed from the Z direction. A point labeled C3 indicates the center of gravity of the third area A3 when viewed from the Z direction. A point labeled C4 indicates the center of gravity of the fourth area A4 when viewed from the Z direction.

The center of gravity C1 of the first area A1 and the center of gravity C4 of the fourth area A4 are shifted from each other in the second reference direction Ry. In the example shown in FIG. 12, the position of the center of gravity C4 of the fourth area A4 in the second reference direction Ry is -Y relative to the position of the center of gravity C1 of the first area A1 in the second reference direction Ry. Ahead of the direction. The center of gravity C1 of the first area A1 and the center of gravity C4 of the fourth area A4 may be displaced by an interval in the second reference direction Ry between two adjacent convex surfaces 305c among the plurality of convex surfaces 305c.

The center of gravity C2 of the second area A2 and the center of gravity C3 of the third area A3 are shifted from each other in the second reference direction Ry. In the example shown in FIG. 12, the position of the center of gravity C3 of the third area A3 in the second reference direction Ry is -Y relative to the position of the center of gravity C2 of the second area A2 in the second reference direction Ry. Ahead of the direction. The center of gravity C2 of the second area A2 and the center of gravity C3 of the third area A3 may be shifted by an interval in the second reference direction Ry between two adjacent convex surfaces 305c among the plurality of convex surfaces 305c.

The direction in which the third area A3 deviates from the second area A2 may be the same as the direction in which the fourth area A4 deviates from the first area A1. Also, the shift amount of the third area A3 with respect to the second area A2 may or may not be the same as the shift amount of the fourth area A4 with respect to the first area A1. Further, the position of the center of gravity C2 of the second area A2 in the second reference direction Ry may or may not be the same as the position of the center of gravity C1 of the first area A1 in the second reference direction Ry. may Further, the position of the center of gravity C4 of the fourth area A4 in the second reference direction Ry may or may not be the same as the position of the center of gravity C3 of the third area A3 in the second reference direction Ry. may

Next, referring to FIG. 12, the shape of each of the first to fourth regions A1 to A4 will be described. Here, the first area A1 will be described as an example. The first region A1 includes a first edge A1a and a second edge A1b located at both ends in the first reference direction Rx, and a third edge A1c located at both ends in the second reference direction Ry. and a fourth edge A1d. The first edge A1a is positioned at the −X direction side end of the first region A1. The second edge A1b is positioned at the X-direction end of the first area A1. The third edge A1c is positioned at the −Y direction end of the first area A1. The fourth edge A1d is located at the Y-direction end of the first area A1.

Each of the first edge A1a and the second edge A1b extends along the second reference direction Ry. Each of the third edge A1c and the fourth edge A1d extends along a third reference direction that intersects each of the first reference direction Rx and the second reference direction Ry and is parallel to the reference plane 4a. extended. Especially in this embodiment, the third reference direction is a direction parallel to one direction between the X direction and the U direction. The angle between the first edge A1a and the third edge A1c and the angle between the second edge A1b and the fourth edge A1d are both obtuse angles. The angle between the first edge A1a and the fourth edge A1d and the angle between the second edge A1b and the third edge A1c are both acute angles.

Here, definitions of the first to fourth edges A1a to A1d will be explained. As shown in FIG. 10, in the first region A1, a plurality of MR elements 50 (a plurality of second MR elements 50B and a plurality of third MR elements 50B) are aligned along the second reference direction Ry. A plurality of element rows made up of the MR elements 50C) are arranged along the first reference direction Rx. At least part of the first edge A1a coincides with a first line defined by the plurality of MR elements 50 included in the element row located on the most −X direction side in the first region A1. good too. The first line is the line connecting the plurality of MR elements 50 with the shortest length. is moved in the -X direction. The first line is parallel to the second reference direction Ry. A first edge A1a substantially indicates the positions of the plurality of MR elements 50 described above.

Even if at least part of the second edge A1b coincides with the second line defined by the plurality of MR elements 50 included in the element row located closest to the X direction in the first area A1 good. The second line is the line connecting the plurality of MR elements 50 with the shortest length. is moved in the X direction. The second line is parallel to the second reference direction Ry. A second edge A1b substantially indicates the positions of the plurality of MR elements 50 described above.

At least a portion of the third edge A1c may coincide with a third line defined by the plurality of MR elements 50 located closest to the -Y direction in each of the plurality of element rows. The third line is the line connecting the plurality of MR elements 50 with the shortest length. is moved in the -Y direction. The third line is parallel to the third reference direction. A third edge A1c substantially indicates the positions of the plurality of MR elements 50 described above.

At least part of the fourth edge A1d may coincide with a fourth line defined by the plurality of MR elements 50 positioned closest to the Y direction in each of the plurality of element rows. The fourth line is the line connecting the plurality of MR elements 50 with the shortest length. is moved in the Y direction. A fourth line is parallel to the third reference direction. A fourth edge A1d substantially indicates the positions of the plurality of MR elements 50 described above.

One end of the third edge A1c may be directly connected to one end of the first edge A1a, or one end of the third edge A1c and one end of the first edge A1a may be connected directly. may be connected via a fifth edge that connects the . The other end of the third edge A1c may be directly connected to one end of the second edge A1b, or the other end of the third edge A1c and one end of the second edge A1b may be connected directly. It may be connected via a sixth edge that connects the part. One end of the fourth edge A1d may be directly connected to the other end of the first edge A1a, or one end of the fourth edge A1d and the other end of the first edge A1a may be connected directly. It may be connected via a seventh edge that connects the part. The other end of the fourth edge A1d may be directly connected to the other end of the second edge A1b, or may be connected directly to the other end of the fourth edge A1d and the second edge A1b. It may be connected via an eighth edge that connects to the other end. Each of the fifth to eighth edges may extend in a direction intersecting each of the first reference direction Rx, the second reference direction Ry and the third reference direction.

The first area A1 may be an area surrounded only by the first to fourth edges A1a to A1d, or may be an area surrounded by the first to fourth edges A1a to A1d and the fifth to fourth edges A1a to A1d. It may be a region bounded by at least one of the eight edges.

The second area A2 has a first edge A2a, a second edge A2b, a third edge A2c, and a fourth edge A2d. The description of the first to fourth edges A1a-A1d of the first area A1 also applies to the first to fourth edges A2a-A2d of the second area A2. In the description of the first to fourth edges A1a to A1d of the first region A1, the first region A1 and the first to fourth edges A1a to A1d are referred to as the second region A2 and the first edge, respectively. The first to fourth edges A2a to A2d of the second region A2 can be explained by replacing them with the fourth edges A2a to A2d. The third reference direction in the second area A2 may or may not be the same as the third reference direction in the first area A1.

The third region A3 has a first edge A3a, a second edge A3b, a third edge A3c, and a fourth edge A3d. The description of the first to fourth edges A1a-A1d of the first area A1 also applies to the first to fourth edges A3a-A3d of the third area A3. In the description of the first to fourth edges A1a to A1d of the first region A1, the first region A1 and the first to fourth edges A1a to A1d are referred to as the third region A3 and the first edge, respectively. The first to fourth edges A3a to A3d of the third region A3 will be explained by replacing them with the fourth edges A3a to A3d. The third reference direction in the third area A3 may or may not be the same as the third reference direction in the first area A1.

The fourth area A4 has a first edge A4a, a second edge A4b, a third edge A4c, and a fourth edge A4d. The description of the first to fourth edges A1a-A1d of the first area A1 also applies to the first to fourth edges A4a-A4d of the fourth area A4. In the description of the first to fourth edges A1a to A1d of the first area A1, the first area A1 and the first to fourth edges A1a to A1d are referred to as the fourth area A4 and the first edge, respectively. The first to fourth edges A4a to A4d of the fourth region A4 will be explained by replacing them with the fourth edges A4a to A4d. The third reference direction in the fourth area A4 may or may not be the same as the third reference direction in the first area A1.

Next, the element arrangement area of the first chip 2 will be explained. Although not shown, the first chip 2 has an element arrangement area for arranging the plurality of first MR elements 50A. In this embodiment, the element placement area of the first chip 2 and a plurality of areas described later are defined as planar areas parallel to the XY plane. The plurality of first MR elements 50A overlaps the element arrangement area of the first chip 2 when viewed from the Z direction. In this embodiment, for the sake of convenience, it is assumed that the element placement region of the first chip 2 is on the upper surface of the insulating layer 204 .

The ratio of the area of the element placement region to the area of the upper surface 2a of the first chip 2 is 2% or more. This percentage may be in the range of 10-90% or in the range of 45-75%.

The element placement region of the first chip 2 includes a first region corresponding to the first resistance portion R11, a second region corresponding to the second resistance portion R12, and a third resistance portion R13. It includes a third region and a fourth region corresponding to the fourth resistance portion R14. The plurality of first MR elements 50A are divided and arranged in first to fourth regions. The first MR element 50A forming the first resistance section R11 is arranged in the first region. The first MR element 50A forming the second resistance section R12 is arranged in the second region. The first MR element 50A forming the third resistance portion R13 is arranged in the third region. The first MR element 50A forming the fourth resistance portion R14 is arranged in the fourth region.

Next, the multiple convex surfaces 305c will be described in detail. The magnetic sensor 1 has a plurality of structures each having a structure for causing the plurality of MR elements 50 to detect specific components of the target magnetic field. In this embodiment, a plurality of second MR elements 50B are arranged on each of the plurality of first inclined surfaces 305a. Each of the plurality of first inclined surfaces 305a is inclined with respect to the upper surface 301a and the reference plane 4a in order to allow the plurality of second MR elements 50B to detect the component of the target magnetic field in the direction parallel to the W1 direction. have a structure. Therefore, the plurality of first inclined surfaces 305a correspond to the "plurality of structures" of the present invention.

Further, in the present embodiment, a plurality of third MR elements 50C are arranged on each of the plurality of second inclined surfaces 305b. Each of the plurality of second inclined surfaces 305b is inclined with respect to the upper surface 301a, that is, the reference plane 4a, in order to allow the plurality of third MR elements 50C to detect the component of the target magnetic field in the direction parallel to the W2 direction. have a structure. Therefore, the plurality of second inclined surfaces 305b correspond to the "plurality of structures" of the present invention.

Also, each of the plurality of convex surfaces 305c includes a first inclined surface 305a and a second inclined surface 305b. Therefore, the plurality of convex surfaces 305c also correspond to the "plurality of structures" of the present invention. The features of the "plurality of structures" of the present invention will be described below by taking the plurality of convex surfaces 305c as an example.

FIG. 13 is a plan view showing a plurality of convex surfaces 305c. In addition, in FIG. 13, for the sake of convenience, two adjacent convex surfaces 305c are spaced apart. FIG. 13 also shows the first to fourth areas A1 to A4 of the element placement area A0 of the second chip 3. FIG. The plurality of convex surfaces 305c exist in the first to fourth areas A1 to A4 of the element placement area A0 of the second chip 3, but the first to fourth areas of the element placement area of the first chip 2 does not exist in

Each of the plurality of convex surfaces 305c extends in a direction intersecting with the first reference direction Rx at an angle other than 90°. Especially in this embodiment, each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. Also, the plurality of convex surfaces 305c includes convex surfaces 305c extending over at least two of the first to fourth areas A1 to A4. The plurality of convex surfaces 305c further includes a convex surface 305c that extends only to one of the first through fourth areas A1-A4.

The relationship between the plurality of convex surfaces 305c and the first to fourth areas A1 to A4 will be described in more detail below. The plurality of convex surfaces 305c includes a convex surface 305c that extends only to the second area A2 and a convex surface 305c that extends only to the fourth area A4. The plurality of convex surfaces 305c further include a convex surface 305c extending over the second and third areas A2, A3 but not extending over the first and fourth areas A1, A4, and a first and fourth area A1 , A4 but not the second and third regions A2, A3. The plurality of convex surfaces 305c further includes a convex surface 305c extending over the first to third areas A1-A3 but not extending to the fourth area A4, , A4 but not into the second region A2. The plurality of convex surfaces 305c further includes convex surfaces 305c extending over the first through fourth regions A1-A4.

Further, the convex surface 305c has a first end and a second end located at both longitudinal ends of the convex surface 305c. A first end and a second end of each of the plurality of convex surfaces 305c are located inside each of the first to fourth areas A1 to A4 and inside of the first to fourth areas A1 to A4. It does not exist between two adjacent regions.

FIG. 14 is an explanatory diagram showing one convex surface 305c and the first and fourth edges A1a and A1d of the first area A1. Here, the angle θ1 formed by the convex surface 305c with respect to the first edge A1a and the angle θ2 formed by the convex surface 305c with respect to the fourth edge A1d are defined as follows. The convex surface 305c has a third end 305c1, which is the end on the -V direction side of the convex surface 305c, and a fourth end 305c2, which is the end on the V direction side of the convex surface 305c. In the present embodiment, the angle (acute angle) formed by the third end 305c1 with respect to the first edge A1a is defined as angle θ1, and the angle formed by the fourth end 305c2 with respect to the fourth edge A1d. (acute angle) is defined as angle θ2.

Angle θ1 is greater than angle θ2. The angle θ1 may be in the range of 43°-47°. The angle θ2 may be less than 45° and within the range of 38°-42°. Also, the sum of the angles θ1 and θ2 may be within the range of 81° to 89°.

In the present embodiment, the angle (acute angle) formed by the third end portion 305c1 with respect to the second edge A1b is defined as the angle formed by the convex surface 305c with respect to the second edge A1b, and the fourth The angle (acute angle) that the end portion 305c2 forms with the third edge A1c is defined as the angle that the convex surface 305c forms with the third edge A1c. The angle formed by the convex surface 305c with respect to the second edge A1b may be equal to the angle θ1. The angle formed by the convex surface 305c with respect to the third edge A1c may be equal to the angle θ2. The angle (angle θ1) formed by the convex surface 305c with the first edge A1a or the second edge A1b is the angle (angle θ1) formed with the third edge A1c or the fourth edge A1d. θ2).

In the present embodiment, the angle formed by the first inclined surface 305a or the second inclined surface 305b with respect to each of the first to fourth edges A1a to A1d is the same as that of the convex surface 305c. are equal to the angles formed with respect to each of the edges A1a to A1d.

So far, focusing on one convex surface 305c, the relationship between the convex surface 305c and the first to fourth edges A1a to A1d of the first region A1 has been described. The above description also applies to the other plurality of convex surfaces 305c. Further, the relationship between the plurality of convex surfaces 305c and the first to fourth edges A1a to A1d of the first region A1 is the relationship between the plurality of convex surfaces 305c and the first to fourth edges A2a to A1d of the second region A2. A2d, the relationship between the plurality of convex surfaces 305c and the first to fourth edges A3a to A3d of the third area A3, and the plurality of convex surfaces 305c and the first to fourth edges of the fourth area A4. This also applies to the relationship with the edges A4a-A4d.

Next, the arrangement of the plurality of MR elements 50 (the plurality of second MR elements 50B and the plurality of third MR elements 50C) in the first region A1 will be described with reference to FIG. FIG. 15 is an explanatory diagram showing a plurality of MR elements in part of the first area A1.

Each of the plurality of MR elements 50 has a shape elongated in a direction different from any of the first reference direction Rx, the second reference direction Ry and the third reference direction. Especially in this embodiment, each of the plurality of MR elements 50 has a shape elongated in a direction parallel to the U direction.

As shown in FIG. 15, in the first area A1, the plurality of MR elements 50 are arranged in a row along the second reference direction Ry, and the plurality of MR elements 50 in the first area A1 are arranged in a line. are arranged so as to line up in a row along a direction parallel to the longitudinal direction of each of them, i.e., a direction parallel to the U direction.

In this embodiment, the interval between any two MR elements 50 is the interval between the center of gravity of one MR element 50 when viewed in the Z direction and the center of gravity of the other MR element 50 when viewed in the Z direction. shall be represented by As shown in FIG. 15, the distance in the first reference direction Rx between two MR elements 50 adjacent in the direction parallel to the longitudinal direction of the MR elements 50 in the first region A1, that is, in the direction parallel to the U direction is represented by the symbol Dx0. Also, the interval in the second reference direction Ry between two MR elements 50 adjacent in the direction parallel to the U direction is represented by symbol Dy0. The interval Dx0 may be equal to the interval Dy0 or may be different from the interval Dy0.

Also, the interval between two MR elements 50 adjacent in the second reference direction Ry is represented by symbol Dy1. In this embodiment, the interval Dy1 is smaller than the interval Dy0.

Next, the first to third detection signals will be explained. First, the first detection signal will be described with reference to FIG. When the strength of the component of the target magnetic field in the direction parallel to the U direction changes, the resistance values of the resistors R11 to R14 of the first detection circuit 10 increase and the resistances of the resistors R11 and R13 increase. The resistance values of R12 and R14 decrease, or the resistance values of resistors R11 and R13 decrease and the resistance values of resistors R12 and R14 increase. This changes the potential of each of the signal output terminals E11 and E12. The first detection circuit 10 generates a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11, and generates a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12. is configured to

Next, the second detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the W1 direction changes, the resistance values of the resistors R21 to R24 of the second detection circuit 20 increase and the resistances of the resistors R21 and R23 increase. The resistance values of R22 and R24 decrease, or the resistance values of resistors R21 and R23 decrease and the resistance values of resistors R22 and R24 increase. This changes the potential of each of the signal output terminals E21 and E22. The second detection circuit 20 generates a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21, and generates a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22. is configured to

Next, the third detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the W2 direction changes, the resistance values of the resistors R31 to R34 of the third detection circuit 30 increase and the resistances of the resistors R31 and R33 increase. The resistance values of R32 and R34 decrease, or the resistance values of resistors R31 and R33 decrease and the resistance values of resistors R32 and R34 increase. This changes the potential of each of the signal output terminals E31 and E32. The third detection circuit 30 generates a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31, and generates a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32. is configured to

Next, the operation of processor 40 will be described. The processor 40 is configured to generate a first detection value based on the first detection signals S11, S12. The first detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the U direction. Hereinafter, the first detected value is represented by the symbol Su.

In the present embodiment, the processor 40 generates the first detection value Su by calculation including determining the difference S11-S12 between the first detection signal S11 and the first detection signal S12. The first detection value Su may be the difference S11-S12 itself, or may be the difference S11-S12 to which predetermined corrections such as gain adjustment and offset adjustment are added.

The processor 40 is further configured to generate a second sensed value and a third sensed value based on the second sensed signals S21, S22 and the third sensed signals S31, S32. The second detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The third detected value is a detected value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the second detected value is denoted by symbol Sv, and the third detected value is denoted by symbol Sz.

Processor 40, for example, generates second and third detection values Sv and Sz as follows. The processor 40 first generates the value S1 by calculation including determining the difference S21-S22 between the second detection signal S21 and the second detection signal S22, and also generates the third detection signal S31 and the third detection signal S31. An operation involving taking the difference S31-S32 of the signal S32 produces the value S2. Next, processor 40 calculates values S3 and S4 using the following equations (1) and (2).

S3=(S2+S1)/(2cosα) (1)
S4=(S2-S1)/(2sinα) (2)

The second detection value Sv may be the value S3 itself, or may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment are added. Similarly, the third detection value Sz may be the value S4 itself, or may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment are added.

Next, the effect of the magnetic sensor 1 according to the present embodiment will be described while comparing with the magnetic sensors of the first to fourth comparative examples. First, the magnetic sensor 401 of the first comparative example will be described. FIG. 16 is a plan view showing a plurality of convex surfaces in the magnetic sensor 401 of the first comparative example. Magnetic sensor 401 of the first comparative example is configured using chip 403 of the comparative example instead of second chip 3 in the present embodiment. A comparative chip 403 includes a comparative insulating layer having a plurality of convex surfaces 405c instead of the insulating layer 305 in this embodiment. Other configurations of the chip 403 of the comparative example are the same as those of the second chip 3 .

The chip 403 of the comparative example has an element placement area corresponding to the element placement area A0 in this embodiment. The element placement regions of the chip 403 of the comparative example are a first region A401, a first It includes two areas A402, a third area A403 and a fourth area A404. The arrangement of the first to fourth areas A401 to A404 is the same as the arrangement of the first to fourth areas A1 to A44.

The shape of each of the plurality of convex surfaces 405c is basically the same as the shape of each of the plurality of convex surfaces 305c. However, each of the plurality of convex surfaces 405c extends only to one of the first to fourth regions A401 to A404, and extends to two or more of the first to fourth regions A401 to A404. Does not extend over an area.

The convex surface 405c has a first end and a second end located at both longitudinal ends of the convex surface 405c. A plurality of first ends and a plurality of second ends are present between two adjacent regions among the first to fourth regions A401 to A404.

A plurality of MR elements 50 are formed on the plurality of convex surfaces 405c. In order to accurately form the MR element 50, it is necessary to accurately form the plurality of convex surfaces 405c. The plurality of convex surfaces 405c are formed, for example, by etching the insulating layer of the comparative example.

Here, attention is paid to the space of two adjacent regions among the first to fourth regions A401 to A404. In this space, the plurality of first ends and the plurality of second ends face each other. If the distance between the plurality of first end portions and the plurality of second end portions becomes small, it becomes difficult to form the plurality of convex surfaces 405c with high accuracy. Therefore, it is necessary to increase the distance between the plurality of first ends and the plurality of second ends, that is, the distance between the two regions to some extent. If the areas of the first to fourth regions A401 to A404 are the same and compared, the element arrangement region of the chip 403 of the comparative example increases as the distance between the two regions increases. As a result, the area of the chip 403 of the comparative example when viewed in the Z direction also increases.

In contrast, in the present embodiment, most of the multiple convex surfaces 305c extend over at least two of the first to fourth regions A1 to A4. The first end and the second end of each of the plurality of convex surfaces 305c do not exist between two adjacent regions among the first to fourth regions A1 to A4. Thus, according to the present embodiment, it is possible to reduce the area of the element arrangement area A0 and the area of the second chip 3 when viewed from the Z direction by reducing the distance between the two areas. As a result, according to this embodiment, the magnetic sensor 1 can be miniaturized. Further, by miniaturizing the magnetic sensor 1, the magnetic sensor device 100 can also be miniaturized.

Next, a magnetic sensor 401B of a second comparative example will be described. FIG. 17 is a plan view showing one convex surface in the magnetic sensor 401B of the second comparative example.

The configuration of the magnetic sensor 401B of the second comparative example differs from the configuration of the magnetic sensor 401A of the first comparative example in the following points. In the second comparative example, each of the plurality of convex surfaces 405c extends in a direction parallel to one direction between the U direction and the −Y direction.

The first region A401 has the same shape or similar shape as the first region A1 in this embodiment. The first region A401 includes a first edge A1a, a second edge A1b, a third edge A1c, and a fourth edge A1d in the embodiment, respectively. edge, a third edge and a fourth edge. Here, the angle formed by the convex surface 405c with respect to the first edge of the first region A401 is referred to as the first angle, and the angle formed by the convex surface 405c with respect to the fourth edge of the first region A401 is referred to as the first angle. Call it the second angle. The definitions of the first and second angles are the same as the definitions of the angles θ1 and θ2 shown in FIG. 14, respectively. In the second comparative example, the first angle is smaller than the second angle. Especially in the second comparative example, the first angle is smaller than 45°.

FIG. 17 shows one convex surface 305c in this embodiment in addition to one convex surface 405c in the second comparative example. One convex surface 305c passes through the corner (see FIG. 12) formed by the intersection of the first edge A2a and the fourth edge A2d of the second area A2, and also extends through the first to fourth areas A1. Extends over ~A4. One convex surface 405c passes through a position corresponding to the corner.

The convex surface 405c shown in FIG. 17 extends over the first to third areas A401 to A403, but does not extend to the fourth area A404. That is, in the second comparative example, the number of convex surfaces 405c extending over a plurality of regions including the fourth region A404 is smaller than in the present embodiment. Instead, in the second comparative example, the number of convex surfaces 405c extending only to the fourth area A404 is increased.

In order to form the MR element 50 with high accuracy, it is necessary to increase the distance between the MR element 50 and the first end or the second end of the convex surface 405c to some extent. Therefore, when comparing with the same number of MR elements 50, in order to reduce the size of the chip 403 while forming the MR elements 50 with high accuracy, the number of the first end and the second end of the convex surface 405c is should be reduced, that is, the number of convex surfaces 405c should be reduced. However, in the second comparative example, as described above, since the number of convex surfaces 405c extending only to the fourth area A404 is increased, the area of the fourth area A404 is increased, and when viewed from the Z direction The area of the chip 403 of .

In contrast, in the present embodiment, the number of convex surfaces 305c extending only to the fourth area A4 can be reduced as compared with the second comparative example. Thus, according to the present embodiment, it is possible to reduce the area of the fourth area A4 and the area of the second chip 3 when viewed in the Z direction. As a result, according to this embodiment, the magnetic sensor 1 can be miniaturized.

Next, a magnetic sensor 401C of a third comparative example will be described. FIG. 18 is a plan view showing a plurality of convex surfaces 405c in a magnetic sensor 401C of a third comparative example.

The configuration of the magnetic sensor 401C of the third comparative example differs from the configuration of the magnetic sensor 401A of the first comparative example in the following points. In the third comparative example, the center of gravity of the first area A401 when viewed in the Z direction, the center of gravity of the second area A402 when viewed in the Z direction, and the third area when viewed in the Z direction The center of gravity of A403 and the center of gravity of the fourth area A404 when viewed from the Z direction are at the same position in the second reference direction Ry.

Here, attention is focused on the specific convex surface 405c1 indicated by reference numeral 405c1 in FIG. The specific convex surface 405c1 includes first and second inclined surfaces corresponding to the first and second inclined surfaces 305a, 305b in this embodiment. A specific convex surface 405c1 extends over the first to fourth regions A401 to A404. A first inclined surface, which is an inclined surface on the V-direction side of the specific convex surface 405c1, exists in each of the first to fourth regions A401 to A404. On the other hand, a second inclined surface, which is an inclined surface on the −V direction side of the specific convex surface 405c1, exists in the first to third regions A401 to A403, but does not exist in the fourth region A404. In this case, the third MR element 50C cannot be formed on the second inclined surface of the specific convex surface 405c1 in the fourth area A404.

Thus, in the third comparative example, there may be a convex surface 405c on which the MR element 50 cannot be formed. On the other hand, in the present embodiment, the centers of gravity of specific two areas among the first to fourth areas A1 to A4 are shifted along the second reference direction Ry. For example, when the specific region includes one of the first and second inclined surfaces 305a and 305b, by shifting the specific region so as to include both the first and second inclined surfaces 305a and 305b, a plurality of The number of first angled surfaces 305a or second angled surfaces 305b extending over the area can be increased. Further, when the specific region includes one of the first and second inclined surfaces 305a and 305b, by shifting the specific region so as not to include both the first and second inclined surfaces 305a and 305b, the specific It is possible to reduce the area of the convex surface 305c that is included in the area of (1) and on which the MR element 50 cannot be formed. Thereby, a plurality of MR elements 50 can be accurately formed in a specific region.

Next, a magnetic sensor 401D of a fourth comparative example will be described. FIG. 19 is a plan view showing part of the first area A401 in the magnetic sensor 401D of the fourth comparative example.

The configuration of the magnetic sensor 401C of the fourth comparative example differs from the configuration of the magnetic sensor 401A of the first comparative example in the following points. In the fourth comparative example, the plurality of MR elements 50 in the first region A401 are arranged in a row along the second reference direction Ry and arranged along the first reference direction Rx. They are arranged in a row.

Here, similarly to FIG. 15, the distance in the first reference direction Rx between two MR elements 50 adjacent to each other in the direction parallel to the longitudinal direction of the MR elements 50, that is, the direction parallel to the U direction, is denoted by Dx0. Also, the interval in the second reference direction Ry between two MR elements 50 adjacent in the direction parallel to the U direction is represented by symbol Dy0. In the fourth comparative example, the distance between two MR elements 50 adjacent in the second reference direction Ry is equal to the distance Dy0.

In contrast, in the present embodiment, as described with reference to FIG. 15, the interval Dy1 between two MR elements 50 adjacent in the second reference direction Ry is smaller than the interval Dy0. When the number of MR elements existing in the first region A1 is the same and the comparison is made, when the interval Dy1 is smaller than the interval Dy0 as in the present embodiment, compared to the case where the interval Dy1 is equal to the interval Dy0, the The first area A1 can be made smaller.

The above description of the first area A1 also applies to the second to fourth areas A2 to A4. Therefore, according to the present embodiment, it is possible to reduce the area of the element placement region A0 and the area of the second chip 3 when viewed from the Z direction. As a result, according to this embodiment, the magnetic sensor 1 can be miniaturized.

In FIG. 19, the first edge of the first area A401 is denoted by A401a, and the fourth edge of the first area A401 is denoted by A401d. In the fourth comparative example, the fourth edge A401d extends in a direction parallel to the first reference direction Rx. Although not shown, in the fourth comparative example, the third edge of the first region A401 also extends in a direction parallel to the first reference direction Rx.

The above description of the first area A401 also applies to the second to fourth areas A402 to A404.

[Modification]
Next, first and second modifications of the magnetic sensor 1 according to the present embodiment will be described. First, a first modification will be described with reference to FIG. FIG. 20 is a plan view showing first to fourth regions A1 to A4 in the first modified example. In the first modification, the position of the center of gravity C4 of the fourth area A4 in the second reference direction Ry is different from the position of the center of gravity C1 of the first area A1 in the second reference direction Ry in the Y direction. ahead. The position of the center of gravity C3 of the third area A3 in the second reference direction Ry is beyond the position of the center of gravity C2 of the second area A2 in the second reference direction Ry in the Y direction.

Next, a second modification will be described with reference to FIG. FIG. 21 is a plan view showing first to fourth regions A1 to A4 in the second modification. In the second modification, the position of the center of gravity C4 of the fourth area A4 in the second reference direction Ry is different from the position of the center of gravity C1 of the first area A1 in the second reference direction Ry in the Y direction. ahead. The position of the center of gravity C3 of the third area A3 in the second reference direction Ry is beyond the position of the center of gravity C2 of the second area A2 in the second reference direction Ry in the -Y direction. In the second modification, the direction in which the third area A3 deviates from the second area A2 is opposite to the direction in which the fourth area A4 deviates from the first area A1.

In the second modification, the position of the center of gravity C2 of the second area A2 in the second reference direction Ry may be the same as the position of the center of gravity C4 of the fourth area A4 in the second reference direction Ry. and may not be the same. Further, the position of the center of gravity C3 of the third area A3 in the second reference direction Ry may or may not be the same as the position of the center of gravity C1 of the first area A1 in the second reference direction Ry. may

[Second embodiment]
A second embodiment of the present invention will now be described with reference to FIG. FIG. 22 is a plan view showing the element arrangement area A0 in this embodiment.

In this embodiment, the extending directions of the third and fourth edges of the first to fourth regions A1 to A4 are different from those in the first embodiment. As described in the first embodiment, each of the third edge A1c and the fourth edge A1d of the first area A1 extends along the third reference direction. Especially in this embodiment, the third reference direction is a direction parallel to one direction between the X direction and the V direction. The angle between the first edge A1a and the third edge A1c and the angle between the second edge A1b and the fourth edge A1d are both acute angles. The angle between the first edge A1a and the fourth edge A1d and the angle between the second edge A1b and the third edge A1c are both obtuse angles.

As in the first embodiment, the angle θ1 that the convex surface 305c forms with the first edge A1a may be larger than the angle θ2 that the convex surface 305c forms with the fourth edge A1d (FIG. 14). Also, the angle formed by the convex surface 305c with respect to the second edge A1b may be equal to the angle θ1. The angle formed by the convex surface 305c with respect to the third edge A1c may be equal to the angle θ2. The angle (angle θ1) formed by the convex surface 305c with the first edge A1a or the second edge A1b is the angle (angle θ1) formed with the third edge A1c or the fourth edge A1d. It may be larger than θ2).

The above description of the first to fourth edges A1a to A1d of the first area A1 applies to the first to fourth edges A2a to A2d of the second area A2 and the first edge A2a to A2d of the third area A3. This also applies to the first to fourth edges A3a to A3d and the first to fourth edges A4a to A4d of the fourth region A4.

Next, the effect of the magnetic sensor 1 according to the present embodiment will be described while comparing with the magnetic sensor of the fifth comparative example. FIG. 23 is a plan view showing one convex surface in the magnetic sensor of the fifth comparative example. The configuration of the magnetic sensor 401E of the fifth comparative example is basically the same as the configuration of the magnetic sensor 401B of the second comparative example described in the first embodiment (see FIG. 17). However, in the magnetic sensor 401E of the fifth comparative example, the shapes and arrangements of the first to fourth regions A401 to A404 of the element arrangement regions of the chip 403 of the comparative example are different from those of the first to fourth embodiments in the present embodiment. It is similar in shape and arrangement to the areas A1 to A4.

Further, in the magnetic sensor of the fifth comparative example, the first angle formed by the convex surface 405c of the chip 403 of the comparative example with respect to the first edge of the first region A401 is 45° or less. The first angle is smaller than the second angle that the convex surface 405c forms with the fourth edge of the first region A401.

FIG. 23 shows one convex surface 305c in this embodiment in addition to one convex surface 405c in the fifth comparative example. One convex surface 305c passes through the corner (see FIG. 12) formed by the intersection of the first edge A2a and the fourth edge A2d of the second area A2, and also extends through the first to fourth areas A1. Extends over ~A4. One convex surface 405c passes through a position corresponding to the corner.

The convex surface 405c shown in FIG. 23 extends over the first to third areas A401 to A403, but does not extend to the fourth area A404. That is, in the fifth comparative example, the number of convex surfaces 405c extending over a plurality of regions including the fourth region A404 is smaller than in the present embodiment. Instead, in the fifth comparative example, the number of convex surfaces 405c extending only to the fourth area A404 is increased.

In contrast, in the present embodiment, the number of convex surfaces 305c extending only to the fourth area A4 can be reduced compared to the fifth comparative example.

As in the present embodiment, both the angle formed by the first edge A1a and the third edge A1c and the angle formed by the second edge A1b and the fourth edge A1d are acute angles. Under the condition that the angle between the first edge A1a and the fourth edge A1d and the angle between the second edge A1b and the third edge A1c are both obtuse angles, the convex surface 305c is The angle θ1 formed with the first edge A1a may be smaller than the angle θ2 formed by the convex surface 305c with the fourth edge A1d. Also, under this condition, the angle θ2 may be greater than 45°. Even in such a case, the number of convex surfaces 305c extending only to the fourth area A4 can be reduced to some extent.

Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

[Third Embodiment]
A third embodiment of the present invention will now be described with reference to FIG. FIG. 24 is a plan view showing the element arrangement area A0 in this embodiment.

In this embodiment, the extending directions of the third and fourth edges of the first to fourth regions A1 to A4 are different from those in the first embodiment. That is, each of the third edge A1c and the fourth edge A1d of the first region A1 extends along the first reference direction Rx. Angle between first edge A1a and third edge A1c, angle between second edge A1b and fourth edge A1d, first edge A1a and fourth edge A1d and the angle between the third edge A1c and the fourth edge A1d are both 90° or nearly 90°.

As in the first embodiment, the angle θ1 that the convex surface 305c forms with the first edge A1a is larger than the angle θ2 that the convex surface 305c forms with the fourth edge A1d (see FIG. 12). . Also, the angle formed by the convex surface 305c with respect to the second edge A1b may be equal to the angle θ1. The angle formed by the convex surface 305c with respect to the third edge A1c may be equal to the angle θ2. The angle (angle θ1) formed by the convex surface 305c with the first edge A1a or the second edge A1b is the angle (angle θ1) formed with the third edge A1c or the fourth edge A1d. θ2).

The above description of the first to fourth edges A1a to A1d of the first area A1 applies to the first to fourth edges A2a to A2d of the second area A2 and the first edge A2a to A2d of the third area A3. This also applies to the first to fourth edges A3a to A3d and the first to fourth edges A4a to A4d of the fourth region A4.

Next, the effect of the magnetic sensor 1 according to the present embodiment will be described while comparing with the magnetic sensor of the sixth comparative example. FIG. 25 is a plan view showing one convex surface in the magnetic sensor of the sixth comparative example. The configuration of the magnetic sensor 401F of the sixth comparative example is basically the same as the configuration of the magnetic sensor 401B of the second comparative example described in the first embodiment (see FIG. 17). However, in the magnetic sensor 401E of the sixth comparative example, the shapes and arrangements of the first to fourth regions A401 to A404 of the element placement region of the chip 403 of the comparative example are different from those of the first to fourth embodiments in the present embodiment. It is similar in shape and arrangement to the areas A1 to A4.

In the magnetic sensor of the sixth comparative example, the first angle formed by the convex surface 405c of the chip 403 of the comparative example with respect to the first edge of the first region A401 is 45° or less. The first angle is less than or equal to the second angle formed by the convex surface 405c with respect to the fourth edge of the first area A401.

FIG. 25 shows one convex surface 305c in this embodiment in addition to one convex surface 405c in the second comparative example. One convex surface 305c passes through the corner (see FIG. 12) formed by the intersection of the first edge A2a and the fourth edge A2d of the second area A2, and also extends through the first to fourth areas A1. Extends over ~A4. One convex surface 405c passes through a position corresponding to the corner.

The convex surface 405c shown in FIG. 25 extends over the first to third areas A401 to A403, but does not extend to the fourth area A404. That is, in the sixth comparative example, the number of convex surfaces 405c extending over a plurality of regions including the fourth region A404 is smaller than in the present embodiment. Instead, in the sixth comparative example, the number of convex surfaces 405c extending only to the fourth area A404 is increased.

In contrast, in the present embodiment, the number of convex surfaces 305c extending only to the fourth area A4 can be reduced as compared with the sixth comparative example.

Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

[Fourth embodiment]
A fourth embodiment of the present invention will now be described with reference to FIG. FIG. 26 is a plan view showing a plurality of convex surfaces 305c in this embodiment. In the present embodiment, the element placement area A0 of the second chip 3 includes the first area A11 and the second area A12 instead of the first to fourth areas A1 to A4 in the first embodiment. , a third area A13 and a fourth area A14.

The first area A11 is an area corresponding to the first resistor portion R21 of the second detection circuit 20 (see FIG. 5) and the first resistor portion R31 of the third detection circuit 30 (see FIG. 6). . The second area A12 is an area corresponding to the second resistor portion R22 of the second detection circuit 20 (see FIG. 5) and the second resistor portion R32 of the third detection circuit 30 (see FIG. 6). . The third area A13 is an area corresponding to the third resistor portion R23 of the second detection circuit 20 (see FIG. 5) and the third resistor portion R33 of the third detection circuit 30 (see FIG. 6). . The fourth area A14 is an area corresponding to the fourth resistance portion R24 of the second detection circuit 20 (see FIG. 5) and the fourth resistance portion R34 of the third detection circuit 30 (see FIG. 6). .

In this embodiment, the plurality of second MR elements 50B of the second detection circuit 20 are divided into first to fourth regions A11 to A14 and arranged. The plurality of third MR elements 50C of the third detection circuit 30 are divided and arranged in first to fourth regions A11 to A14.

The first and fourth regions A11 and A14 are arranged side by side along the first reference direction Rx. The first area A11 is located near the edge of the element arrangement area A0 on the X-direction side. The fourth area A14 is located near the edge of the element arrangement area A0 on the -X direction side. The second and third areas A12 and A13 are arranged ahead of the first and fourth areas A11 and A14 in the -Y direction, respectively.

Each of the first to fourth regions A11 to A14 has a first edge and a second edge located at both ends in the first reference direction Rx, and a second edge located at both ends in the second reference direction Ry. It has three edges and a fourth edge. The first to fourth edges of each of the first to fourth regions A11 to A14 are the same as the first edge in the first embodiment, except for the length of each of the first to fourth edges. It may have features similar to the first through fourth edges A1a through A1d of region A1.

The multiple convex surfaces 305c include a convex surface 305c extending only to the first area A11 and a convex surface 305c extending only to the third area A13. The plurality of convex surfaces 305c further includes a convex surface 305c that extends over the first and second areas A11, A12 but not the third and fourth areas A13, A14, and a second and fourth area A12. , A14 but not the first and third areas A11, A13 and a convex surface 305c extending over the third and fourth areas A13, A14 but not the first and second areas A11, A11, A14. A12 includes a non-extending convex surface 305c. The plurality of convex surfaces 305c further includes a convex surface 305c that extends over the first, second and fourth areas A11, A12, A14 but does not extend to the third area A13, and the second to fourth areas A12. , and a convex surface 305c that extends over A14 but does not extend into the first region A11.

A first end and a second end of each of the plurality of convex surfaces 305c are located inside each of the first to fourth regions A11 to A14 and inside each of the first to fourth regions A11 to A14. It does not exist between two adjacent regions.

Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

[Fifth Embodiment]
Next, a fifth embodiment of the invention will be described. A magnetic sensor device 100 according to the present embodiment includes the magnetic sensor 101 according to the present embodiment and the processor 40 described in the first embodiment. The magnetic sensor 101 may have the same external shape as the first chip 2 or the second chip 3 in the first embodiment.

The configuration of magnetic sensor 101 according to the present embodiment will be described below with reference to FIGS. 27 to 30. FIG. FIG. 27 is a functional block diagram showing the configuration of magnetic sensor device 100 according to the present embodiment. FIG. 28 is a circuit diagram showing the circuit configuration of the first detection circuit in this embodiment. FIG. 29 is a circuit diagram showing the circuit configuration of the second detection circuit in this embodiment. FIG. 30 is a circuit diagram showing the circuit configuration of the third detection circuit in this embodiment.

The magnetic sensor 101 includes a first detection circuit 110 , a second detection circuit 120 and a third detection circuit 130 . Each of the first through third detection circuits 110, 120, 130 includes a plurality of MR elements.

The first detection circuit 110 is configured to detect a component of the target magnetic field in a direction parallel to the U direction and generate first detection signals S111 and S112 having a correspondence relationship with this component. The second detection circuit 120 is configured to detect a component of the target magnetic field in a direction parallel to the V direction and generate second detection signals S121 and S122 having a correspondence relationship with this component. The third detection circuit 130 is configured to detect a component of the target magnetic field in a direction parallel to the Z direction and generate third detection signals S131 and S132 having a correspondence relationship with this component.

The circuit configuration of the first detection circuit 110 is basically the same as the circuit configuration of the first detection circuit 10 in the first embodiment. In FIG. 28, the first to fourth resistance sections of the first detection circuit 110 corresponding to the first to fourth resistance sections R11, R12, R13 and R14 of the first detection circuit 10 are denoted by reference numerals R111 and R111, respectively. They are indicated by R112, R113 and R114.

The circuit configuration of the second detection circuit 120 is basically the same as the circuit configuration of the second detection circuit 20 in the first embodiment. In FIG. 29, the first to fourth resistance sections of the second detection circuit 120 corresponding to the first to fourth resistance sections R21, R22, R23 and R24 of the second detection circuit 20 are denoted by R121 and R121, respectively. They are indicated by R122, R123 and R124.

The circuit configuration of the third detection circuit 130 is basically the same as the circuit configuration of the third detection circuit 30 in the first embodiment. In FIG. 30, the first to fourth resistance sections of the third detection circuit 130 corresponding to the first to fourth resistance sections R31, R32, R33 and R34 of the third detection circuit 30 are denoted by reference numerals R131 and R131, respectively. They are indicated by R132, R133 and R134.

The resistance portions R111 to R114, R121 to R124, R131 to R134 are composed of a plurality of MR elements. A plurality of MR elements of the magnetic sensor 101 are denoted by reference numeral 150 below. The configuration of the MR element 150 may be the same as the configuration of the MR element 50 described in the first embodiment. That is, the MR element 150 has at least the magnetization fixed layer 52, the free layer 54 and the gap layer 53 (see FIG. 11).

28 and 29, filled arrows represent the magnetization direction of the magnetization pinned layer 52 of the MR element 150. In FIG. In the example shown in FIG. 28, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R111 and R113 is the U direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance sections R112 and R114 is the -U direction. Also, the free layer 54 of each of the plurality of MR elements 150 of the first detection circuit 110 has shape anisotropy in which the direction of easy magnetization is parallel to the V direction.

In the example shown in FIG. 29, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R121 and R123 is the V direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance sections R122 and R124 is the -V direction. Also, the free layer 54 of each of the plurality of MR elements 150 of the second detection circuit 120 has shape anisotropy such that the direction of easy magnetization is parallel to the U direction.

The free layer 54 of each of the plurality of MR elements 150 of the third detection circuit 130 has shape anisotropy in which the direction of easy magnetization is parallel to the V direction. The magnetization direction of the magnetization fixed layer 52 in the third detection circuit 130 will be described later.

Next, a specific structure of the magnetic sensor 101 will be described. The magnetic sensor 101 includes a substrate 140 having a top surface 140a, a first portion including a first detection circuit 110, a second portion including a second detection circuit 120, and a third portion including a third detection circuit . 3 parts. It is assumed that the upper surface 140a of the substrate 140 is parallel to the XY plane. The first to third portions are formed on substrate 140 . The structure of the first portion and the structure of the second portion are the same as the structure of the first chip 2 (excluding the substrate 201) described in the first embodiment. The plurality of MR elements 150 included in the first portion each have a shape elongated in the V direction. The plurality of MR elements 150 included in the second portion each have a shape elongated in the U direction. The first and second portions may or may not include the first coil 70 described in the first embodiment.

Next, the structure of the third portion of the magnetic sensor 101 will be described with reference to FIGS. 31 to 33. FIG. FIG. 31 is a plan view showing part of the magnetic sensor 101. FIG. FIG. 32 is a perspective view showing multiple MR elements 150 and multiple yokes. FIG. 33 is a side view showing multiple MR elements 150 and multiple yokes.

The structure of the third part is basically the same as the structure of the first part. The third portion further includes a plurality of yokes 151 each made of soft magnetic material. 31 shows the substrate 140, the plurality of MR elements 150, and the plurality of yokes 151 among the constituent elements of the magnetic sensor 101. As shown in FIG.

Each of the plurality of yokes 151 may have a rectangular parallelepiped shape elongated in the V direction. Each of the plurality of yokes 151 is configured to receive an input magnetic field including an input magnetic field component parallel to the Z direction and generate an output magnetic field. The output magnetic field includes an output magnetic field component in a direction parallel to the first reference direction Rx and varying according to the input magnetic field component.

Each of the plurality of yokes 151 has a first end face 151a and a second end face 151b located at both ends in the direction parallel to the U direction. In each of the plurality of yokes 151, the first end face 151a is positioned at the end of the yoke 151 in the -U direction, and the second end face 151b is positioned at the end of the yoke 151 in the U direction. Also, the plurality of yokes 151 are arranged in a direction parallel to the U direction.

As shown in FIGS. 31 to 33, in the third portion, a plurality of MR elements 150 are aligned along the first end surface 151a and a plurality of MR elements 150 are aligned along the second end surface 151b. Standing in line. Hereinafter, the plurality of MR elements 150 arranged along the first end surface 151a are denoted by reference numeral 150A, and the plurality of MR elements 150 arranged along the second end surface 151b are denoted by reference numeral 150B. In the second portion, a plurality of MR elements 150A and a plurality of MR elements 150B are arranged such that the row of MR elements 150A and the row of MR elements 150B are alternately arranged in a direction parallel to the U direction. arrayed. The plurality of MR elements 150A and the plurality of MR elements 150B need not overlap the plurality of yokes 151 when viewed from above.

Although not shown, the third portion further includes a plurality of first lower electrodes, a plurality of second lower electrodes, a plurality of first upper electrodes, and a plurality of second upper electrodes. there is A plurality of MR elements 150A are connected in series by a plurality of first lower electrodes and a plurality of first upper electrodes. A plurality of MR elements 150B are connected in series by a plurality of second lower electrodes and a plurality of second upper electrodes.

Next, the arrangement of the plurality of MR elements 150 of the third detection circuit 130 will be described with reference to FIG. FIG. 34 is a plan view showing an element placement region and a plurality of yokes. FIG. 34 shows a second portion of the magnetic sensor 101. FIG. The magnetic sensor 101 has an element arrangement area A100 for arranging the plurality of MR elements 150 of the third detection circuit 130 . The element placement area A100 includes a first area A101 and a second area A102. The first region A101 is a region corresponding to the first and fourth resistance sections R131 and R134. The second region A102 is a region corresponding to the second and third resistance sections R132 and R133. The plurality of MR elements 150 of the third detection circuit 130 are divided into first and second regions A101 and A102.

Each of the first and second regions A101 and A102 has a first edge and a second edge located at both ends in the first reference direction Rx, and a second edge located at both ends in the second reference direction Ry. It has three edges and a fourth edge. FIG. 31 shows part of the first area A101. In FIG. 31, reference A101b indicates the second edge of the first area A101, and reference A101d indicates the fourth edge of the first area A101.

The first to fourth edges of each of the first and second regions A101 and A102 are the same as the first edge in the first embodiment except for the length of each of the first to fourth edges. It may have features similar to the first through fourth edges A1a through A1d of region A1. However, in the first and second regions A101 and A102, the third reference direction, which is the direction in which each of the third and fourth edges extends, is one direction between the X direction and the V direction. parallel direction.

Next, the multiple yokes 151 will be described in detail. When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by each of the plurality of MR elements 150A is the U direction, and the direction of the output magnetic field component received by each of the plurality of MR elements 150B is the -U direction. Become. When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component received by each of the plurality of MR elements 150A is the -U direction, and the direction of the output magnetic field component received by each of the plurality of MR elements 150B is the U direction. become. Thus, the multiple yokes 151 have a structure for allowing the multiple MR elements 150 to detect the component of the target magnetic field in the direction parallel to the U direction. Therefore, the multiple yokes 151 correspond to the "plurality of structures" of the present invention.

The plurality of yokes 151 includes a yoke 151 extending over the first and second areas A101 and A102, a yoke 151 extending only in the first area A101, and a yoke 151 extending only in the second area A102. and In addition, the yoke 151 has a first end and a second end positioned at both longitudinal ends of the yoke 151 . A first end and a second end of each of the plurality of yokes 151 are located inside each of the first and second regions A101 and A102 and between the first region A101 and the second region A102. does not exist in between.

The relationship between the yoke 151 and the first to fourth edges of each of the first and second regions A101 and A102 is the same as the convex surface 305c and the first edge of the first region A1 described in the first embodiment. or the fourth edges A1a to A1d.

Next, the first to third detection signals in this embodiment will be described. First, the first detection signal will be briefly described. The manner in which the resistance values of the resistance units R111 to R114 of the first detection circuit 110 change is the same as the resistance values of the resistance units R11 to R14 of the first detection circuit 10 described in the first embodiment. is the same as the mode of change of The first detection circuit 110 generates a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S111, and generates a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S112. is configured to

Next, the second detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the V direction changes, the resistance values of the resistors R121 to R124 of the second detection circuit 120 increase and the resistances of the resistors R121 and R123 increase. The resistance values of R122 and R124 decrease, or the resistance values of resistors R121 and R123 decrease and the resistance values of resistors R122 and R124 increase. This changes the potential of each of the signal output terminals E21 and E22. The second detection circuit 120 generates a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S121, and generates a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S122. is configured to

Next, the third detection signal will be described with reference to FIGS. 30 to 34. FIG. The first resistance section R131 is composed of a plurality of MR elements 150A arranged in the first region A101. The second resistance section R132 is composed of a plurality of MR elements 150A arranged in the second region A102. The third resistor portion R133 is composed of a plurality of MR elements 150B arranged in the second region A102. The fourth resistance section R134 is composed of a plurality of MR elements 150B arranged in the first region A101.

The magnetization direction of the magnetization pinned layer 52 in each of the first and fourth resistance units R131 and R134 is the U direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and third resistance portions R132 and R133 is the -U direction.

When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by the plurality of MR elements 150A in the first and second resistance units R131 and R132 is the U direction, and the direction of the output magnetic field component is the U direction. The direction of the output magnetic field components received by the plurality of MR elements 150B in R133 and R134 is the -U direction. In this case, the resistance values of the plurality of MR elements 150A in the first resistance section R131 and the plurality of MR elements 150B in the third resistance section R133 decrease compared to the state in which no output magnetic field component exists, The resistance values of the first and third resistance units R131 and R133 also decrease. In addition, the resistance values of each of the MR elements 150B in the second resistance section R132 and the plurality of MR elements 150B in the fourth resistance section R134 increase compared to the state where there is no output magnetic field component. The resistance values of the second and fourth resistance portions R132 and R134 also increase.

When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component and the change in the resistance values of the first to fourth resistors R131 to R134 are the same when the direction of the input magnetic field component is the Z direction. is the opposite.

As described above, when the direction and intensity of the input magnetic field component change, the resistance values of the resistors R131 to R134 of the third detection circuit 130 increase, while the resistances of the resistors R131 and R133 increase. The resistance value of R134 decreases, or the resistance values of resistors R131 and R133 decrease and the resistance values of resistors R132 and R134 increase. This changes the potential of each of the signal output terminals E31 and E32. The third detection circuit 130 generates a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S131, and generates a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S132. is configured to

Next, the operation of processor 40 in this embodiment will be described. In this embodiment, the processor 40 generates the first detection value Su based on the first detection signals S111 and S112, and generates the second detection value Sv based on the second detection signals S121 and S122. and generates a third detection value Sz based on the third detection signals S131 and S132.

A method for generating the first to third detection values Su, Sv, and Sz will be described below. The processor 40 generates the first sensed value Su by computation including determining the difference S111-S112 between the first sensed signal S111 and the first sensed signal S112. The first detection value Su may be the difference S111-S112 itself, or may be the difference S111-S112 to which predetermined corrections such as gain adjustment and offset adjustment are added.

Also, the processor 40 generates the second detection value Sv by calculation including obtaining the difference S121-S122 between the second detection signal S121 and the second detection signal S122. The second detection value Sv may be the difference S121-S122 itself, or may be the difference S121-S122 with predetermined corrections such as gain adjustment and offset adjustment.

Also, the processor 40 generates the third detection value Sz by calculation including obtaining the difference S131-S132 between the third detection signal S131 and the third detection signal S132. The third detection value Sz may be the difference S131-S132 itself, or may be the difference S131-S132 to which predetermined corrections such as gain adjustment and offset adjustment are added.

Among the features of the first embodiment described with reference to FIGS. 12 through 14 and FIGS. Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

[Sixth Embodiment]
Next, a sixth embodiment of the invention will be described. The magnetic sensor device 100 in this embodiment includes a first chip 8 instead of the first chip 2 in the first embodiment. A magnetic sensor 1 according to this embodiment is composed of a first chip 8 and a second chip 3 . Although not shown, the first chip 8 has the same external shape as the second chip 3 . Like the second chip 3 , the first chip 8 is mounted on the reference plane 4 a of the support 4 with the lower surface of the first chip 8 facing the reference plane 4 a of the support 4 . (See Figures 1 and 2).

The configuration of the second chip 3 in this embodiment is the same as in the first embodiment. In this embodiment, the two detection circuits included in the second chip 3 are referred to as the third detection circuit 20 and the fourth detection circuit 30 for convenience. The configurations of the third and fourth detection circuits 20 and 30 in this embodiment are the same as the configurations of the second and third detection circuits 20 and 30 in the first embodiment, respectively.

Further, in this embodiment, for convenience, the two detection signals generated by the third detection circuit 20 are referred to as third detection signals S21 and S22, and the two detection signals generated by the fourth detection circuit 30 are referred to as , the fourth detection signals S31 and S32. The third detection signals S21, S22 and the fourth detection signals S31, S32 in the present embodiment are the second detection signals S21, S22 and the third detection signals S31, S32 in the first embodiment, respectively. is the same as

Further, in the present embodiment, for convenience, the plurality of MR elements 50 forming the third detection circuit 20 are referred to as the plurality of third MR elements 50B, and the plurality of MR elements forming the fourth detection circuit 30 are referred to as the plurality of third MR elements 50B. 50 is referred to as a plurality of fourth MR elements 50C. The plurality of third MR elements 50B and the plurality of fourth MR elements 50C in the present embodiment are the same as the plurality of second MR elements 50B and the plurality of third MR elements 50C in the first embodiment, respectively. is the same as

The magnetic sensor 1 according to this embodiment has third and fourth detection circuits 20 and 30 . Further, the magnetic sensor 1 according to the present embodiment includes a first detection circuit 240 and a second detection circuit 250 instead of the first detection circuit 10 and the first coil 70 in the first embodiment. and a first coil 280 .

The first and second detection circuits 240 and 250 will be described below with reference to FIGS. 35 to 39. FIG. FIG. 35 is a functional block diagram showing the configuration of the magnetic sensor device 100. As shown in FIG. FIG. 36 is a circuit diagram showing the circuit configuration of the first detection circuit 240. As shown in FIG. FIG. 37 is a circuit diagram showing the circuit configuration of the second detection circuit 250. As shown in FIG. FIG. 38 is a plan view showing part of the first chip 8. FIG. FIG. 39 is a cross-sectional view showing part of the first chip 8. As shown in FIG.

Here, as shown in FIG. 39, the W4 direction and the W5 direction are defined as follows. The W4 direction is a direction rotated from the U direction toward the -Z direction. The W5 direction is a direction rotated from the U direction toward the Z direction. Especially in this embodiment, the W4 direction is the direction rotated from the V direction toward the −Z direction by γ, and the W5 direction is the direction rotated from the U direction toward the Z direction by γ. γ is an angle larger than 0° and smaller than 90°. γ may be equal to β described in the first embodiment. The direction opposite to the W4 direction is the -W4 direction, and the direction opposite to the W5 direction is the -W5 direction. The W4 direction and W5 direction are each orthogonal to the V direction.

The first detection circuit 240 is configured to detect a component of the target magnetic field in a direction parallel to the W4 direction and generate first detection signals S41 and S42 having a correspondence relationship with this component. The second detection circuit 250 is configured to detect a component of the target magnetic field in a direction parallel to the W5 direction and generate second detection signals S51 and S52 having a correspondence relationship with this component.

As shown in FIG. 36, the first detection circuit 240 includes a power terminal V4, a ground terminal G4, signal output terminals E41 and E42, a first resistor R41, a second resistor R42, It includes a third resistance portion R43 and a fourth resistance portion R44. A plurality of MR elements of the first detection circuit 240 constitute first to fourth resistance sections R41, R42, R43 and R44.

The first resistor R41 is provided between the power supply terminal V4 and the signal output terminal E41. The second resistance portion R42 is provided between the signal output terminal E41 and the ground terminal G4. The third resistor R43 is provided between the signal output terminal E42 and the ground terminal G4. The fourth resistance portion R44 is provided between the power supply terminal V4 and the signal output terminal E42.

As shown in FIG. 37, the second detection circuit 250 includes a power terminal V5, a ground terminal G5, signal output terminals E51 and E52, a first resistor R51, a second resistor R52, It includes a third resistance portion R53 and a fourth resistance portion R54. A plurality of MR elements of the second detection circuit 250 constitute first to fourth resistance sections R51, R52, R53 and R54.

The first resistance portion R51 is provided between the power supply terminal V5 and the signal output terminal E51. The second resistor R52 is provided between the signal output terminal E51 and the ground terminal G5. The third resistance portion R53 is provided between the signal output terminal E52 and the ground terminal G5. The fourth resistance portion R54 is provided between the power supply terminal V5 and the signal output terminal E52.

A predetermined magnitude of voltage or current is applied to each of the power terminals V4 and V5. Each of ground ends G4 and G5 is connected to the ground.

Hereinafter, the plurality of MR elements of the first detection circuit 240 will be referred to as the plurality of first MR elements 50D, and the plurality of MR elements of the second detection circuit 250 will be referred to as the plurality of second MR elements 50E. Since the first and second detection circuits 240 and 250 are components of the magnetic sensor 1, it can be said that the magnetic sensor 1 includes a plurality of first MR elements 50D and a plurality of second MR elements 50E. . The configuration of each of the plurality of first MR elements 50D and the plurality of second MR elements 50E is the same as the configuration of the MR element 50 described in the first embodiment.

36 and 37, filled arrows represent the magnetization direction of the magnetization pinned layer 52 (see FIG. 11) of the MR element 50. In FIG. The white arrow indicates the magnetization direction of the free layer 54 (see FIG. 11) of the MR element 50 when no target magnetic field is applied to the MR element 50 .

In the example shown in FIG. 36, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistance portions R41 and R43 is the W4 direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance portions R42 and R44 is the -W4 direction. Also, the free layer 54 of each of the plurality of first MR elements 50D has shape anisotropy in which the direction of easy magnetization is parallel to the V direction. The direction of magnetization of the free layer 54 in each of the first and second resistance sections R41 and R42 is the V direction when no target magnetic field is applied to the first MR element 50D. The direction of magnetization of the free layer 54 in each of the third and fourth resistance sections R43 and R44 is the -V direction in the above case.

In the example shown in FIG. 37, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R51 and R53 is the W5 direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance portions R52 and R54 is the -W5 direction. Also, the free layer 54 of each of the plurality of second MR elements 50E has shape anisotropy in which the direction of easy magnetization is parallel to the V direction. The direction of magnetization of the free layer 54 in each of the first and second resistance sections R51 and R52 is the V direction when no target magnetic field is applied to the second MR element 50E. The magnetization direction of the free layer 54 in each of the third and fourth resistance sections R53 and R54 is the -V direction in the above case.

In this embodiment, the magnetic field generator includes the free layers 54 of each of the plurality of first MR elements 50D and the plurality of second MR elements 50E instead of the first coil 70 in the first embodiment. It includes a first coil 280 that applies a magnetic field in a predetermined direction to the . The first chip 8 also includes a first coil 280 .

A specific structure of the first chip 8 will be described in detail below. FIG. 39 shows a portion of the cross-section taken at line 39-39 in FIG. The first chip 8 includes a substrate 321 having an upper surface 321a, insulating layers 322, 323, 324, 325, 327, 328, 329, and 330, a plurality of lower electrodes 61D, a plurality of lower electrodes 61E, and a plurality of It includes an upper electrode 62 D, a plurality of upper electrodes 62 E, a plurality of lower coil elements 281 and a plurality of upper coil elements 282 . 39 shows the insulating layer 325, the plurality of first MR elements 50D, the plurality of second MR elements 50E, and the plurality of upper coil elements 282 among the constituent elements of the first chip 8. FIG.

Also, the insulating layer 325 has a plurality of convex surfaces 325c. Each of the plurality of convex surfaces 325c includes a first inclined surface 325a and a second inclined surface 325b.

The structure of the first chip 8 may be symmetrical with the structure of the second chip 3 around the YZ plane. In this case, the structure of the first chip 8 can be explained by replacing the components of the second chip 3 with the components of the first chip 8 . Specifically, the components of the second chip 3 are replaced with the components of the first chip 8 as follows. The plurality of third MR elements 50B and the plurality of fourth MR elements 50C (the plurality of second MR elements 50B and the plurality of third MR elements 50C in the first embodiment) of the second chip 3 are , replaces the plurality of first MR elements 50D and the plurality of second MR elements 50E, respectively. The plurality of lower electrodes 61C and the plurality of lower electrodes 61D of the second chip 3 are replaced with the plurality of lower electrodes 61D and the plurality of lower electrodes 61E, respectively. The plurality of upper electrodes 62C and the plurality of upper electrodes 62D of the second chip 3 are replaced with the plurality of upper electrodes 62D and the plurality of upper electrodes 62E, respectively. The plurality of lower coil elements 81 and the plurality of upper coil elements 82 of the second chip 3 are replaced with the plurality of lower coil elements 281 and the plurality of upper coil elements 282, respectively. The insulating layers 302-305 and 307-310 of the second chip 3 are replaced with insulating layers 322-325 and 327-330, respectively.

The plurality of convex surfaces 305c, the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b of the second chip 3 are respectively the plurality of convex surfaces 325c, the plurality of first inclined surfaces 325a and the plurality of It replaces the second inclined surface 325b. In the first embodiment, the U direction, the V direction, the −V direction, the W1 direction, the W2 direction, and the VZ cross section are used to define the plurality of convex surfaces 305c, the plurality of first inclined surfaces 305a, and the plurality of second inclined surfaces 305a. , the characteristics of the inclined surface 305b of . As described above, when the components of the second chip 3 are replaced with the components of the first chip 8, the U direction, V direction, −V direction, W1 direction, W2 direction and VZ cross section are respectively It replaces the V direction, U direction, -U direction, W4 direction, W5 direction and UZ cross section.

Next, the arrangement of the plurality of first MR elements 50D and the plurality of second MR elements 50E will be described. The first chip 8 has an element arrangement area for arranging a plurality of first MR elements 50D and a plurality of second MR elements 50E. The element arrangement area of the first chip 8 includes a first area corresponding to the first resistance sections R41 and R51, a second area corresponding to the second resistance sections R42 and R52, and a third resistance section. It includes a third region corresponding to R43 and R53 and a fourth region corresponding to fourth resistance portions R44 and R54.

The arrangement of the first through fourth areas of the element placement area of the first chip 8 is similar to the first through fourth areas of the element placement area A0 of the second chip 3 shown in FIG. 12 in the first embodiment. The arrangement may be the same as that of the areas A1 to A4. Alternatively, the arrangement of the first to fourth areas of the element placement area of the first chip 8 is the first to fourth areas A1 to A4 of the element placement area A0 of the second chip 3 with the YZ plane as the center. may be symmetrical with the arrangement of

Further, each shape of the first to fourth areas of the element placement area of the first chip 8 is the same as the first to fourth areas A1 of the element placement area A0 of the second chip 3 with the YZ plane as the center. to A4 may be symmetrical.

The arrangement of the plurality of first MR elements 50D and the plurality of second MR elements 50E in each of the first to fourth areas of the element arrangement area of the first chip 8 is centered on the YZ plane, and is arranged in the second direction. The plurality of third MR elements 50B and the plurality of fourth MR elements 50C (the plurality of second and the arrangement of the MR element 50B and the plurality of third MR elements 50C).

Next, referring to FIG. 36, the first detection signals S41 and S42 will be described. When the intensity of the component of the target magnetic field in the direction parallel to the W4 direction changes, the resistance values of the resistors R41 to R44 of the first detection circuit 240 increase and the resistances of the resistors R41 and R43 increase. The resistance values of R42 and R44 decrease, or the resistance values of resistors R41 and R43 decrease and the resistance values of resistors R42 and R44 increase. As a result, the potentials of the signal output terminals E41 and E42 change. The first detection circuit 240 generates a signal corresponding to the potential of the signal output terminal E41 as the first detection signal S41, and generates a signal corresponding to the potential of the signal output terminal E42 as the first detection signal S42. is configured to

Next, the second detection signals S51 and S52 will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the W5 direction changes, the resistance values of the resistors R51 to R54 of the second detection circuit 250 increase and the resistances of the resistors R51 and R53 increase. The resistance values of R52 and R54 decrease, or the resistance values of resistors R51 and R53 decrease and the resistance values of resistors R52 and R54 increase. This changes the potential of each of the signal output terminals E51 and E52. The second detection circuit 250 generates a signal corresponding to the potential of the signal output terminal E51 as the second detection signal S51, and generates a signal corresponding to the potential of the signal output terminal E52 as the second detection signal S52. is configured to

Next, the operation of processor 40 in this embodiment will be described. In this embodiment, the processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S41, S42 and the second detection signals S51, S52. there is The first detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the U direction. The second detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the first detected value is represented by symbol Su1, and the second detected value is represented by symbol Sz1.

The processor 40 is further configured to generate a third sensed value and a fourth sensed value based on the third sensed signals S21, S22 and the fourth sensed signals S31, S32. The third detected value is a detected value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The fourth detected value is a detected value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the third detected value is denoted by symbol Sv1, and the fourth detected value is denoted by symbol Sz2.

The method of generating the first and second detection values Su1 and Sz1 is the same as the method of generating the second and third detection values Sv and Sz described in the first embodiment. Replacing Sv and Sz in the description of the method of generating the second and third detection values Sv and Sz with Su1 and Sz1 respectively will explain the method of generating the first and second detection values Su1 and Sz1.

The method of generating the third and fourth detection values Sv1 and Sz2 is also the same as the method of generating the second and third detection values Sv and Sz described in the first embodiment. Replacing Sv and Sz in the description of the method of generating the second and third detection values Sv and Sz with Sv1 and Sz2 respectively will explain the method of generating the third and fourth detection values Sv1 and Sz2.

In this embodiment, the processor 40 may perform an operation to average the second and third detection values Sz1, Sz2. In this case, the processor 40 may generate the value obtained by the calculation as a detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction.

Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

It should be noted that the present invention is not limited to the above embodiments, and various modifications are possible. For example, the magnetic sensor of the present invention may be one in which multiple chips are integrated.

As described above, the magnetic sensor of the present invention includes a plurality of resistance units each composed of a plurality of magnetoresistive effect elements, and a structure for causing each of the plurality of magnetoresistive effect elements to detect a specific component of the target magnetic field. and a plurality of structures having The plurality of magnetoresistive elements are divided and arranged in a plurality of regions corresponding to the plurality of resistance portions. The multiple areas are arranged to line up along the first reference direction. Each of the plurality of regions has a first edge and a second edge located at both ends in the first reference direction, and a third edge located at both ends in a second reference direction orthogonal to the first reference direction. and a fourth edge. Each of the first edge and the second edge extends along the second reference direction. Each of the plurality of structures extends in a direction crossing each of the first reference direction and the second reference direction. The angle formed by each of the plurality of structures with respect to the first edge or the second edge is larger than the angle formed with each of the plurality of structures with respect to the third edge or the fourth edge. big. The plurality of structures includes structures extending across at least two of the plurality of regions.

In the magnetic sensor of the present invention, each of the third edge and the fourth edge may extend in a direction intersecting with each of the first reference direction and the second reference direction. Both the angle formed by the first edge and the third edge and the angle formed by the second edge and the fourth edge are obtuse angles. Both the angle formed by the second edge and the angle formed by the second edge and the third edge may be acute angles.

In the magnetic sensor of the present invention, the plurality of magnetoresistive elements may be arranged along the first reference direction and along each of the plurality of structures. good.

Moreover, in the magnetic sensor of the present invention, the plurality of structures may each include a plurality of yokes each made of a soft magnetic material.

Moreover, in the magnetic sensor of the present invention, the plurality of structures may each include a plurality of inclined surfaces inclined with respect to a reference plane parallel to the first reference direction and the second reference direction. A plurality of magnetoresistive elements may be arranged on each of the plurality of inclined surfaces.

Further, in the magnetic sensor of the present invention, the dimension in the first reference direction of the element arrangement region, which is the region including a plurality of regions, may be larger than the dimension in the second reference direction.

Further, in the magnetic sensor of the present invention, each of the plurality of regions may have a dimension in the first reference direction smaller than a dimension in the second reference direction.

Moreover, in the magnetic sensor of the present invention, the plurality of regions may include a first specific region and a second specific region. The center of gravity of the first specific region and the center of gravity of the second specific region may be offset from each other in the second reference direction. The center of gravity of the first specific region and the center of gravity of the second specific region may be shifted by the distance in the second reference direction between two adjacent structures among the plurality of structures.

Also, the magnetic sensor of the present invention may further comprise a power supply terminal, a ground terminal, a first output terminal, and a second output terminal. The plurality of resistors includes a first resistor provided between a power supply terminal and a first output terminal, a second resistor provided between a ground terminal and the first output terminal, A third resistance section provided between the ground terminal and the second output terminal, and a fourth resistance section provided between the power supply terminal and the second output terminal may be included. The multiple regions may include a first region, a second region, a third region, and a fourth region. The plurality of magnetoresistive effect elements are arranged in the first region, the plurality of second magnetoresistive effect elements arranged in the second region, and the third region. and a plurality of fourth magnetoresistive elements arranged in the fourth region. The plurality of first magnetoresistive effect elements, the plurality of second magnetoresistive effect elements, the plurality of third magnetoresistive effect elements, and the plurality of fourth magnetoresistive effect elements each include a first resistance section, A second resistance section, a third resistance section, and a fourth resistance section may be configured.

REFERENCE SIGNS LIST 1 magnetic sensor 2 first chip 3 second chip 4 support 6, 7 adhesive 10 first detection circuit 20 second detection circuit 30 second 3 detection circuit 40 processor 50 MR element 50A first MR element 50B second MR element 50C third MR element 51 antiferromagnetic layer 52 magnetization fixed layer , 53... gap layer, 54... free layer, 61, 61A, 61B, 61C... lower electrode, 62, 62A, 62B, 62C... upper electrode, 70... first coil, 71... lower coil element, 72... upper coil Elements 80 Second coil 81 Lower coil element 82 Upper coil element 100 Magnetic sensor device 201, 301 Substrate 201a, 301a Upper surface 202 to 204, 207 to 210, 302 to 305 , 307 to 310... insulating layer, 305a... first inclined surface, 305b... second inclined surface, 305c... convex surface.

Claims (12)

a plurality of resistance units configured by a plurality of magnetoresistive effect elements;
A plurality of structures each having a structure for causing the plurality of magnetoresistive effect elements to detect a specific component of the target magnetic field,
The plurality of magnetoresistive elements are divided and arranged in a plurality of regions corresponding to the plurality of resistance units,
The plurality of regions are arranged to line up along a first reference direction,
Each of the plurality of regions has a first edge and a second edge positioned at both ends in the first reference direction and positions at both ends in a second reference direction orthogonal to the first reference direction. having a third edge and a fourth edge to
each of the first edge and the second edge extends along the second reference direction;
each of the plurality of structures extends in a direction intersecting each of the first reference direction and the second reference direction;
The angle formed by each of the plurality of structures with respect to the first edge or the second edge is such that each of the plurality of structures forms an angle with the third edge or the fourth edge. greater than the angle to the
A magnetic sensor, wherein the plurality of structures includes structures extending over at least two of the plurality of regions. 2. The method according to claim 1, wherein each of said third edge and said fourth edge extends in a direction intersecting each of said first reference direction and said second reference direction. magnetic sensor. Both the angle formed by the first edge and the third edge and the angle formed by the second edge and the fourth edge are obtuse angles, and the first edge and the 3. The magnetic sensor according to claim 2, wherein both the angle formed by the fourth edge and the angle formed by the second edge and the third edge are acute angles. 3. The plurality of magnetoresistive effect elements are arranged so that a plurality of them are aligned along the first reference direction and a plurality of the magnetoresistive elements are aligned along each of the plurality of structures. 2. The magnetic sensor according to claim 1. 2. The magnetic sensor according to claim 1, wherein said plurality of structures each include a plurality of yokes each made of a soft magnetic material. 2. The magnetic sensor according to claim 1, wherein each of said plurality of structures includes a plurality of inclined surfaces inclined with respect to reference planes parallel to said first reference direction and said second reference direction. 7. The magnetic sensor according to claim 6, wherein a plurality of said magnetoresistive elements are arranged on each of said plurality of inclined surfaces. 2. The magnetic sensor according to claim 1, wherein the element placement area, which is the area including the plurality of areas, has a dimension in the first reference direction that is larger than a dimension in the second reference direction. 2. The magnetic sensor according to claim 1, wherein each of said plurality of areas has a dimension in said first reference direction smaller than a dimension in said second reference direction. The plurality of regions includes a first specific region and a second specific region,
2. The magnetic sensor according to claim 1, wherein the center of gravity of said first specific area and the center of gravity of said second specific area are shifted from each other in said second reference direction. The center of gravity of the first specific region and the center of gravity of the second specific region are displaced by an interval in the second reference direction between two adjacent structures among the plurality of structures. 11. The magnetic sensor according to claim 10, wherein Furthermore, the power end and
a ground end;
a first output end;
a second output end;
The plurality of resistors includes a first resistor provided between the power supply terminal and the first output terminal, and a second resistor provided between the ground terminal and the first output terminal. a third resistor provided between the ground terminal and the second output terminal; and a fourth resistor provided between the power supply terminal and the second output terminal and
the plurality of regions includes a first region, a second region, a third region, and a fourth region;
The plurality of magnetoresistive effect elements include a plurality of first magnetoresistive effect elements arranged in the first region, a plurality of second magnetoresistive effect elements arranged in the second region, and the including a plurality of third magnetoresistive effect elements arranged in a third region and a plurality of fourth magnetoresistive effect elements arranged in the fourth region;
Each of the plurality of first magnetoresistive effect elements, the plurality of second magnetoresistive effect elements, the plurality of third magnetoresistive effect elements, and the plurality of fourth magnetoresistive effect elements 12. The magnetic sensor according to any one of claims 1 to 11, comprising one resistance section, the second resistance section, the third resistance section, and the fourth resistance section.

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