JP2023046276A - Magnetic sensor device - Google Patents

Abstract

To realize a magnetic sensor device capable of reducing an error caused by a magnetic field other than a magnetic field to be detected.SOLUTION: A magnetic sensor device 100 includes: a first detection circuit 10; a second detection circuit 20; and a processor 40. The processor 40 is constituted so as to execute first generation processing for generating a first initial detection value, second generation processing for generating a second initial detection value, first correction processing, second correction processing, and determination processing. The first correction processing corrects the first initial detection value and updates the first initial detection value. The second correction processing corrects the second initial detection value and updates the second initial detection value. The processor 40 executes determination processing after alternately executing the first correction processing and the second correction processing.SELECTED DRAWING: Figure 12

Description

The present invention relates to a magnetic sensor device configured to detect multiple magnetic fields in multiple different directions.

2. Description of the Related Art In recent years, magnetic sensors using magnetoresistive elements have been used in various applications. In a system including a magnetic sensor, it is sometimes desired to detect a magnetic field including a component in a direction perpendicular to the plane of the substrate by using a magnetoresistive element provided on the substrate. In this case, a soft magnetic body is provided for converting a magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or a magnetoresistive element is arranged on an inclined surface formed on the substrate. By doing so, it is possible to detect a magnetic field including a component in the direction perpendicular to the plane of the substrate.

Patent Document 1 discloses a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are provided on a substrate. A magnetoresistive element that constitutes the Z-axis sensor is provided on a slope of a protrusion formed on an underlying film of a substrate.

Japanese Patent Application Laid-Open No. 2006-261401

A magnetic sensor in which a magnetoresistive element is arranged on an inclined surface does not require a soft magnetic material for converting a magnetic field. By the way, the soft magnetic material may also function as a shield. In other words, the soft magnetic material may be configured to have the function of blocking or attenuating magnetic fields in directions other than the direction to be detected, while hardly attenuating magnetic fields in the direction to be detected. Therefore, in such a soft magnetic material or a magnetic sensor without a shield, the sensitivity of the magnetoresistive effect element changes due to a magnetic field in a direction different from the direction to be detected. In some cases, the detection accuracy decreased.

The present invention has been made in view of such problems, and an object of the present invention is to provide a magnetic sensor device configured to detect a plurality of magnetic fields in a plurality of directions different from each other. An object of the present invention is to provide a magnetic sensor device capable of reducing errors.

A magnetic sensor device of the present invention includes a first detection circuit configured to detect a component of a target magnetic field in one direction, which is a magnetic field to be detected, and generate a first detection signal; A second detection circuit configured to detect the unidirectional component to generate a second detection signal and a processor.

The processor performs a first generation process of generating a first initial detection value using the first detection signal and a second generation process of generating a second initial detection value using the second detection signal. , a first correction process of correcting the first initial detection value using a second correction value generated from the latest second initial detection value to update the first initial detection value; a second correction process of correcting the second initial detection value using a first correction value generated from the first initial detection value to update the second initial detection value; Determining the initial detection value as the first detection value having a corresponding relationship with the component of the target magnetic field parallel to the first reference direction, and determining the latest second initial detection value parallel to the second reference direction. and a determination process of determining a second detection value having a correspondence relationship with the component of the target magnetic field. The processor executes the determination process after alternately executing the first correction process and the second correction process.

In the magnetic sensor device of the present invention, the processor executes the determination process after alternately executing the first correction process and the second correction process. Thus, according to the present invention, it is possible to reduce errors caused by magnetic fields other than the magnetic field to be detected.

1 is a perspective view showing a magnetic sensor device according to a first embodiment of the invention; FIG. 1 is a plan view showing a magnetic sensor device according to a first embodiment of the invention; FIG. 1 is a functional block diagram showing the configuration of a magnetic sensor device according to a first embodiment of the invention; FIG. 1 is a circuit diagram showing a circuit configuration of a first detection circuit according to a first embodiment of the invention; FIG. 4 is a circuit diagram showing the circuit configuration of a second detection circuit according to the first embodiment of the present invention; FIG. It is a circuit diagram which shows the circuit structure of the 3rd detection circuit in the 1st Embodiment of this invention. FIG. 2 is a plan view showing part of the first chip in the first embodiment of the invention; 3 is a cross-sectional view showing part of the first chip in the first embodiment of the invention; FIG. FIG. 4 is a plan view showing part of the second chip in the first embodiment of the invention; FIG. 4 is a cross-sectional view showing part of the second chip in the first embodiment of the present invention; 1 is a side view showing a magnetoresistive element according to a first embodiment of the invention; FIG. 3 is a functional block diagram showing the configuration of a processor according to the first embodiment of the invention; FIG. It is a circuit diagram showing the circuit configuration of the first detection circuit in the second embodiment of the present invention. It is a circuit diagram showing the circuit configuration of a second detection circuit in the second embodiment of the present invention. It is a circuit diagram which shows the circuit structure of the 3rd detection circuit in the 2nd Embodiment of this invention. FIG. 9 is a functional block diagram showing the configuration of a magnetic sensor device according to a third embodiment of the invention; It is a circuit diagram which shows the circuit structure of the 1st detection circuit in the 3rd Embodiment of this invention. It is a circuit diagram showing the circuit configuration of a second detection circuit in the third embodiment of the present invention. It is a circuit diagram which shows the circuit structure of the 3rd detection circuit in the 3rd Embodiment of this invention. FIG. 11 is a perspective view showing a plurality of magnetoresistive elements and a plurality of yokes according to a third embodiment of the invention; FIG. 11 is a side view showing a plurality of magnetoresistive elements and a plurality of yokes according to a third embodiment of the invention; FIG. 11 is a functional block diagram showing the configuration of a processor according to a third embodiment of the present invention; FIG.

[First embodiment]
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor device according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. FIG. 1 is a perspective view showing the magnetic sensor device 100. FIG. FIG. 2 is a plan view showing the magnetic sensor device 100. FIG. FIG. 3 is a functional block diagram showing the configuration of the magnetic sensor device 100. As shown in FIG. A magnetic sensor device 100 includes a magnetic sensor 1 .

The magnetic sensor device 100 comprises a first chip 2, a second chip 3, and a support 4 that supports the first and second chips 2,3. A magnetic sensor 1 is composed of a first chip 2 and a second chip 3 . The first chip 2, the second chip 3 and the support 4 all have a rectangular parallelepiped shape. The support 4 has a reference plane 4a as an upper surface, a lower surface located on the opposite side of the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

Here, the reference coordinate system in this embodiment will be described with reference to FIGS. 1 and 2. FIG. The reference coordinate system is a coordinate system based on the magnetic sensor device 100 and is an orthogonal coordinate system defined by three axes. The reference coordinate system defines X, Y, and Z directions. The X direction, Y direction, and Z direction are orthogonal to each other. Particularly in the present embodiment, the direction perpendicular to the reference plane 4a of the support 4 and the direction from the lower surface of the support 4 toward the reference plane 4a is defined as the Z direction. The direction opposite to the X direction is -X direction, the direction opposite to Y direction is -Y direction, and the direction opposite to Z direction is -Z direction. The three axes that define the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

Hereinafter, a position ahead of the reference position in the Z direction will be referred to as "upper", and a position on the opposite side of the reference position as "upper" will be referred to as "lower". Further, with respect to the components of the magnetic sensor device 100, the surface positioned at the end in the Z direction is called the "upper surface", and the surface positioned at the end in the -Z direction is called the "lower surface". Also, the expression "when viewed from the Z direction" means viewing an object from a position distant in the Z direction.

The first chip 2 has an upper surface 2a and a lower surface located opposite to each other, and four side surfaces connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface located opposite to each other, and four side surfaces connecting the upper surface 3a and the lower surface.

The first chip 2 is mounted on the reference plane 4 a of the support 4 with the lower surface of the first chip 2 facing the reference plane 4 a. The second chip 3 is mounted on the reference plane 4a of the support 4 with the lower surface of the second chip 3 facing the reference plane 4a. The first chip 2 and the second chip 3 are bonded to the support 4 by means of adhesives 6 and 7, respectively.

The first chip 2 has a plurality of first electrode pads 21 provided on the upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on the upper surface 3a. The support 4 has a plurality of third electrode pads provided on the reference plane 4a. Although not shown, in the magnetic sensor device 100, two corresponding electrode pads among the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads are connected to each other by bonding wires. It is connected.

Here, the dimension in the direction perpendicular to the reference plane 4a is called thickness. As shown in FIG. 1, the thickness of the first chip 2 and the thickness of the second chip 3 may be the same. Also, the thickness of the support 4 may be greater than the thickness of the first chip 2 and the thickness of the second chip 3 .

The magnetic sensor 1 includes a first detection circuit 10 , a second detection circuit 20 and a third detection circuit 30 . The first chip 2 contains a first detection circuit 10 . A second chip 3 includes a second detection circuit 20 and a third detection circuit 30 . Since the magnetic sensor 1 is a component of the magnetic sensor device 100 , it can be said that the magnetic sensor device 100 includes the first to third detection circuits 10 , 20 and 30 .

The magnetic sensor device 100 further comprises a processor 40 . Support 4 includes a processor 40 . The first to third detection circuits 10, 20, 30 and the processor 40 are connected via a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads and a plurality of bonding wires. connected.

Each of the first through third detection circuits 10, 20, 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. Especially in this embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive elements. The magnetoresistive element is hereinafter referred to as an MR element.

The processor 40 processes a plurality of detection signals generated by the first to third detection circuits 10, 20, and 30 to obtain a third detection signal having a correspondence relationship with components of the magnetic field in three mutually different directions at a predetermined reference position. It is configured to generate one sensed value, a second sensed value and a third sensed value. Especially in this embodiment, the three mutually different directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured by, for example, an application specific integrated circuit (ASIC).

Next, the first to third detection circuits 10, 20, 30 will be described with reference to FIGS. 3 to 10. FIG. FIG. 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. As shown in FIG. FIG. 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20. As shown in FIG. FIG. 6 is a circuit diagram showing the circuit configuration of the third detection circuit 30. As shown in FIG. FIG. 7 is a plan view showing part of the first chip 2. FIG. FIG. 8 is a cross-sectional view showing part of the first chip 2. As shown in FIG. FIG. 9 is a plan view showing part of the second chip 3. FIG. FIG. 10 is a cross-sectional view showing part of the second chip 3. As shown in FIG.

Here, as shown in FIGS. 7 and 9, the U direction and V direction are defined as follows. The U direction is a direction rotated from the X direction toward the -Y direction. The V direction is the direction rotated from the Y direction toward the X direction. Particularly in this embodiment, the U direction is the direction rotated from the X direction to the -Y direction by α, and the V direction is the direction rotated from the Y direction to the X direction by α. Note that α is an angle larger than 0° and smaller than 90°. In one example, α is 45°. The direction opposite to the U direction is the -U direction, and the direction opposite to the V direction is the -V direction.

In this embodiment, the U direction corresponds to the "first reference direction" of the invention. Also, in the present embodiment, the V direction corresponds to the "second reference direction" in the present invention. The first reference direction (U direction) and the second reference direction (V direction) are both parallel to the reference plane 4a and orthogonal to each other.

Also, as shown in FIG. 10, the W1 direction and the W2 direction are defined as follows. The W1 direction is a direction rotated from the V direction toward the -Z direction. The W2 direction is a direction rotated from the V direction toward the Z direction. Especially in this embodiment, the W1 direction is the direction rotated from the V direction toward the −Z direction by β, and the W2 direction is the direction rotated from the V direction toward the Z direction by β. β is an angle larger than 0° and smaller than 90°. The direction opposite to the W1 direction is the -W1 direction, and the direction opposite to the W2 direction is the -W2 direction. The W1 direction and W2 direction are each orthogonal to the U direction.

The first detection circuit 10 is configured to detect a component of the target magnetic field in a direction parallel to the U direction and to generate at least one first detection signal having a corresponding relationship with this component. The second detection circuit 20 is configured to detect a component of the target magnetic field in a direction parallel to the W1 direction and to generate at least one second detection signal having a corresponding relationship with this component. The third detection circuit 30 is configured to detect a component of the target magnetic field in a direction parallel to the W2 direction and to generate at least one third detection signal having a corresponding relationship with this component.

As shown in FIG. 4, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, It includes a third resistance portion R13 and a fourth resistance portion R14. A plurality of MR elements of the first detection circuit 10 constitute first to fourth resistance sections R11, R12, R13 and R14.

The first and second resistance units R11 and R12 are connected in series in a first path (left path in FIG. 4) that electrically connects the first node P11 and the second node P12. It is The third and fourth resistance parts R13 and R14 are connected in series in a second path (right path in FIG. 4) which is another path electrically connecting the first node P11 and the second node P12. It is connected to the.

The first and fourth resistance sections R11 and R14 are connected to the first node P11. The second and third resistors R12, R13 are connected to the second node P12. The first node P11 is connected to the power supply end V1. The second node P12 is connected to the ground end G1. A connection point between the first resistance portion R11 and the second resistance portion R12 is connected to the signal output terminal E11. A connection point between the third resistance portion R13 and the fourth resistance portion R14 is connected to the signal output terminal E12.

As shown in FIG. 5, the second detection circuit 20 includes a power terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, It includes a third resistance portion R23 and a fourth resistance portion R24. A plurality of MR elements of the second detection circuit 20 constitute first to fourth resistance sections R21, R22, R23 and R24.

The circuit configuration of the second detection circuit 20 is basically the same as that of the first detection circuit 10 . The power supply terminal V1, the ground terminal G1, the signal output terminals E11 and E12, the resistors R11, R12, R13 and R14, and the nodes P11 and P12 in the description of the circuit configuration of the first detection circuit 10 are replaced with the power supply terminal V2. , ground terminal G2, signal output terminals E21 and E22, resistors R21, R22, R23 and R24, and nodes P21 and P22, the circuit configuration of the second detection circuit 20 will be described.

As shown in FIG. 6, the third detection circuit 30 includes a power terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, It includes a third resistance portion R33 and a fourth resistance portion R34. A plurality of MR elements of the third detection circuit 30 constitute first to fourth resistance sections R31, R32, R33 and R34.

The circuit configuration of the third detection circuit 30 is basically the same as that of the first detection circuit 10 . The power supply terminal V1, the ground terminal G1, the signal output terminals E11 and E12, the resistors R11, R12, R13 and R14, and the nodes P11 and P12 in the description of the circuit configuration of the first detection circuit 10 are replaced with the power supply terminal V3. , ground terminal G3, signal output terminals E31 and E32, resistors R31, R32, R33 and R34, and nodes P31 and P32, the circuit configuration of the third detection circuit 30 will be described.

A predetermined magnitude of voltage or current is applied to each of the power supply terminals V1 to V3. Each of the ground ends G1-G3 is connected to the ground.

Hereinafter, the plurality of MR elements of the first detection circuit 10 will be referred to as the plurality of first MR elements 50A, the plurality of the MR elements of the second detection circuit 20 will be referred to as the plurality of second MR elements 50B, and the The plurality of MR elements of the detection circuit 30 are referred to as a plurality of third MR elements 50C. Since the first to third detection circuits 10, 20, and 30 are components of the magnetic sensor 1, the magnetic sensor 1 includes a plurality of first MR elements 50A, a plurality of second MR elements 50B and a plurality of second MR elements. 3 MR elements 50C. Also, an arbitrary MR element is denoted by reference numeral 50. FIG.

FIG. 11 is a side view showing the MR element 50. FIG. The MR element 50 is a spin valve type MR element. The MR element 50 includes a magnetization fixed layer 52 having magnetization whose direction is fixed, a free layer 54 having magnetization whose direction can be changed according to the direction of the target magnetic field, and between the magnetization fixed layer 52 and the free layer 54. and a gap layer 53 disposed thereon. The MR element 50 may be a TMR (tunnel magnetoresistive effect) element or a GMR (giant magnetoresistive effect) element. In the TMR element, gap layer 53 is a tunnel barrier layer. In the GMR element, gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the magnetization direction of the free layer 54 with respect to the magnetization direction of the magnetization fixed layer 52. When this angle is 0°, the resistance value becomes the minimum value. The resistance reaches its maximum value when the angle is 180°. In each MR element 50 , the free layer 54 has shape anisotropy such that the easy magnetization axis direction is orthogonal to the magnetization direction of the magnetization fixed layer 52 . A magnet that applies a bias magnetic field to the free layer 54 can also be used as means for setting the axis of easy magnetization in a predetermined direction in the free layer 54 .

The MR element 50 further has an antiferromagnetic layer 51 . The antiferromagnetic layer 51, magnetization fixed layer 52, gap layer 53 and free layer 54 are laminated in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and causes exchange coupling with the magnetization fixed layer 52 to fix the magnetization direction of the magnetization fixed layer 52 . The magnetization pinned layer 52 may be a so-called self-pinned pinned layer (synthetic ferri pinned layer, SFP layer). A self-pinned fixed layer has a laminated ferrimagnetic structure in which a ferromagnetic layer, a nonmagnetic intermediate layer, and a ferromagnetic layer are laminated, and the two ferromagnetic layers are antiferromagnetically coupled. If the magnetization fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 may be omitted.

Note that the arrangement of the layers 51 to 54 in the MR element 50 may be upside down from the arrangement shown in FIG.

In FIGS. 4 to 6, the filled arrows represent the magnetization direction of the magnetization pinned layer 52 of the MR element 50. As shown in FIG. The white arrow indicates the magnetization direction of the free layer 54 of the MR element 50 when no symmetrical magnetic field is applied to the MR element 50 .

Here, the first magnetization direction, the second magnetization direction, the third magnetization direction, and the fourth magnetization direction are defined as follows. The first magnetization direction is one direction that intersects an axis parallel to the Z direction (hereinafter referred to as Z axis). The second magnetization direction is one direction intersecting the Z-axis and opposite to the first magnetization direction. The third magnetization direction is one direction intersecting the Z-axis and orthogonal to the first magnetization direction. The fourth magnetization direction is one direction that intersects the Z-axis and is one direction opposite to the third magnetization direction.

In the first detection circuit 10, the first magnetization direction is the U direction, the second magnetization direction is the -U direction, the third magnetization direction is the V direction, and the fourth magnetization direction is the -V direction. is the direction. In the example shown in FIG. 4, the magnetization of the magnetization fixed layer 52 in each of the first and third resistance sections R11 and R13 includes a component in the first magnetization direction (U direction). The magnetization of the magnetization pinned layer 52 in each of the second and fourth resistance sections R12 and R14 includes a component in the second magnetization direction (-U direction).

Also, in the example shown in FIG. 4, the magnetization of the free layer 54 in each of the first and second resistance portions R11 and R12 is the third It contains a component in the magnetization direction (V direction). The magnetization of the magnetization fixed layer 52 in each of the third and fourth resistance sections R13 and R14 is the component in the fourth magnetization direction (−V direction) when the target magnetic field is not applied to the first MR element 50A. contains.

Note that when the magnetization of the magnetization fixed layer 52 includes a specific magnetization direction component, the specific magnetization direction component may be the main component of the magnetization of the magnetization fixed layer 52 . Alternatively, the magnetization of the magnetization fixed layer 52 may not contain a component in a direction orthogonal to a specific magnetization direction. In the present embodiment, when the magnetization of the magnetization fixed layer 52 includes a specific magnetization direction component, the magnetization direction of the magnetization fixed layer 52 is the specific magnetization direction or substantially the specific magnetization direction.

Similarly, when the magnetization of the free layer 54 when no symmetrical magnetic field is applied to the free layer 54 includes a component in a specific magnetization direction, the component in the specific magnetization direction is the main component of the magnetization of the free layer 54. may be Alternatively, the magnetization of the free layer 54 in the above case may not contain a component perpendicular to the particular magnetization direction. In the present embodiment, when the magnetization of the free layer 54 in the above case includes a component in the specific magnetization direction, the magnetization direction of the free layer 54 in the above case is the specific magnetization direction or substantially the specific magnetization direction. be the direction.

The first detection circuit 10 is configured such that the magnetization of the free layer 54 is in the direction described above when no target magnetic field is applied to the first detection circuit 10 . Specifically, the free layer 54 of each of the plurality of first MR elements 50A of the first detection circuit 10 has a different shape in which the easy magnetization axis direction is parallel to the third magnetization direction (V direction). It has directionality. The direction parallel to the third magnetization direction (V direction) is also the direction parallel to the fourth magnetization direction (−V direction).

In the second detection circuit 20, the first magnetization direction is the W1 direction, the second magnetization direction is the -W1 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. is the direction. The first detection circuit 10, the resistors R11, R12, R13, R14, and the first MR element in the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the first detection circuit 10 50A, U direction, -U direction, V direction and -V direction are respectively connected to the second detection circuit 20, resistors R21, R22, R23 and R24, the second MR element 50B, W1 direction, -W1 direction, The magnetization direction of the magnetization pinned layer 52 and the magnetization direction of the free layer 54 in the second detection circuit 20 can be explained by replacing them with the U direction and the −U direction.

In the third detection circuit 30, the first magnetization direction is the W2 direction, the second magnetization direction is the -W2 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the -U direction. is the direction. The first detection circuit 10, the resistors R11, R12, R13, R14, and the first MR element in the description of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the first detection circuit 10 50A, the U direction, the -U direction, the V direction and the -V direction are respectively connected to the third detection circuit 30, the resistors R31, R32, R33 and R34, the third MR element 50C, the W2 direction, the -W2 direction, The magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the third detection circuit 30 can be explained by replacing them with the U direction and the −U direction.

The magnetic sensor 1 applies a magnetic field in a predetermined direction to the free layer 54 of each of the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C. includes a magnetic field generator configured to In this embodiment, the magnetic field generator includes a first coil 70 that applies a magnetic field in a predetermined direction to the free layer 54 of each first MR element 50A, and a plurality of second MR elements 50B. and a second coil 80 for applying a magnetic field in a predetermined direction to the free layer 54 of each of the plurality of third MR elements 50C. The first chip 2 contains a first coil 70 . A second chip 3 includes a second coil 80 .

Specific structures of the first chip 2 and the second chip 3 will be described in detail below. FIG. 8 shows a portion of the cross section at the position indicated by line 8-8 in FIG.

The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 207, 208, 209, 210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, and a plurality of lower coils. It includes an element 71 and a plurality of upper coil elements 72 . It is assumed that the upper surface 201a of the substrate 201 is parallel to the XY plane. The Z direction is also one direction perpendicular to the top surface 201 a of the substrate 201 . Note that the coil element is a part of the winding of the coil.

An insulating layer 202 is disposed over the substrate 201 . A plurality of lower coil elements 71 are arranged on the insulating layer 202 . The insulating layer 203 is arranged around the plurality of lower coil elements 71 on the insulating layer 202 . An insulating layer 204 is disposed over the plurality of lower coil elements 71 and the insulating layer 203 .

A plurality of lower electrodes 61A are arranged on the insulating layer 204 . The insulating layer 207 is arranged on the insulating layer 204 and around the plurality of lower electrodes 61A. The plurality of first MR elements 50A are arranged on the plurality of lower electrodes 61A. The insulating layer 208 is arranged on the plurality of lower electrodes 61A and the insulating layer 207 and around the plurality of first MR elements 50A. A plurality of upper electrodes 62A are disposed over the plurality of first MR elements 50A and the insulating layer 208. As shown in FIG. The insulating layer 209 is arranged on the insulating layer 208 and around the plurality of upper electrodes 62A.

The insulating layer 210 is arranged on the plurality of upper electrodes 62A and the insulating layer 209 . A plurality of upper coil elements 72 are disposed on insulating layer 210 . The first chip 2 may further include an insulating layer (not shown) covering the plurality of upper coil elements 72 and the insulating layer 210 . 7 shows the insulating layer 204, the plurality of first MR elements 50A, and the plurality of upper coil elements 72 among the constituent elements of the first chip 2. As shown in FIG.

The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surface of each of the plurality of lower electrodes 61A is also parallel to the XY plane. Therefore, in the above state, it can be said that the plurality of first MR elements 50A are arranged on a plane parallel to the XY plane.

As shown in FIG. 7, the plurality of first MR elements 50A are arranged in parallel in the U direction and the V direction. A plurality of first MR elements 50A are connected in series by a plurality of lower electrodes 61A and a plurality of upper electrodes 62A. Note that the two adjacent first MR elements 50A may or may not be shifted in the direction parallel to the V direction when viewed from the Z direction.

Here, a method of connecting the plurality of first MR elements 50A will be described in detail with reference to FIG. In FIG. 11, reference numeral 61 denotes a lower electrode corresponding to an arbitrary MR element 50, and reference numeral 62 denotes an upper electrode corresponding to an arbitrary MR element 50. FIG. As shown in FIG. 11, each lower electrode 61 has an elongated shape. A gap is formed between two lower electrodes 61 adjacent in the longitudinal direction of the lower electrodes 61 . On the upper surface of the lower electrode 61, the MR elements 50 are arranged near both ends in the longitudinal direction. Each upper electrode 62 has an elongated shape, and is arranged on two lower electrodes 61 adjacent in the longitudinal direction of the lower electrode 61 to electrically connect two adjacent MR elements 50 to each other.

Although not shown, one MR element 50 positioned at the end of a row of a plurality of MR elements 50 is adjacent to a plurality of other MR elements 50 in a direction crossing the longitudinal direction of the lower electrode 61. , is connected to another MR element 50 located at the end of the column. These two MR elements 50 are connected to each other by electrodes (not shown). The electrodes (not shown) may be electrodes that connect the bottom surfaces or the top surfaces of the two MR elements 50 .

When the MR element 50 shown in FIG. 11 is the first MR element 50A, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61A, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62A. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the V direction.

In this embodiment, the MR element 50 is a laminated film including the antiferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer . However, the MR element of the present embodiment may include the laminated film, the lower electrode 61 and the upper electrode 62 . The laminated film includes a plurality of magnetic films.

Each of the multiple upper coil elements 72 extends in a direction parallel to the Y direction. Also, the plurality of upper coil elements 72 are arranged so as to line up in the X direction. Particularly in this embodiment, two upper coil elements 72 overlap each of the plurality of first MR elements 50A when viewed in the Z direction.

Each of the multiple lower coil elements 71 extends in a direction parallel to the Y direction. Also, the plurality of lower coil elements 71 are arranged so as to line up in the X direction. The shape and arrangement of the plurality of lower coil elements 71 may be the same as or different from the shape and arrangement of the plurality of upper coil elements 72 .

In the example shown in FIGS. 7 and 8, the plurality of lower coil elements 71 and the plurality of upper coil elements 72 are arranged parallel to the X direction with respect to the free layer 54 of each of the plurality of first MR elements 50A. are electrically connected to form a first coil 70 that applies a magnetic field of . Also, the first coil 70 applies, for example, a magnetic field in the X direction to the free layers 54 in the first and second resistance sections R11 and R12, and the free layers 54 in the third and fourth resistance sections R13 and R14. It may be configured so that a magnetic field in the −X direction can be applied to the layer 54 . Also, the first coil 70 may be controlled by the processor 40 .

Next, the structure of the second chip 3 will be described with reference to FIGS. 9 and 10. FIG. FIG. 10 shows a portion of the cross section at the position indicated by line 10--10 in FIG.

The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, and 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, and a plurality of lower electrodes 61C. It includes an upper electrode 62 B, a plurality of upper electrodes 62 C, a plurality of lower coil elements 81 and a plurality of upper coil elements 82 . It is assumed that the upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also one direction perpendicular to the top surface 301 a of the substrate 301 .

An insulating layer 302 is disposed over the substrate 301 . A plurality of lower coil elements 81 are arranged on the insulating layer 302 . The insulating layer 303 is arranged around the plurality of lower coil elements 81 on the insulating layer 302 . Insulating layers 304 and 305 are laminated in this order on the plurality of lower coil elements 81 and insulating layer 303 .

A plurality of lower electrodes 61 B and a plurality of lower electrodes 61 C are arranged on the insulating layer 305 . The insulating layer 307 is arranged on the insulating layer 305 around the plurality of lower electrodes 61B and around the plurality of lower electrodes 61C. A plurality of second MR elements 50B are arranged on a plurality of lower electrodes 61B. A plurality of third MR elements 50C are arranged on a plurality of lower electrodes 61C. The insulating layer 308 is arranged on the plurality of lower electrodes 61B, the plurality of lower electrodes 61C and the insulating layer 307 around the plurality of second MR elements 50B and the plurality of third MR elements 50C. A plurality of upper electrodes 62B are disposed over the plurality of second MR elements 50B and the insulating layer 308 . A plurality of upper electrodes 62C are disposed over the plurality of third MR elements 50C and the insulating layer 308. As shown in FIG. The insulating layer 309 is arranged on the insulating layer 308 around the plurality of upper electrodes 62B and around the plurality of upper electrodes 62C.

The insulating layer 310 is arranged on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C and the insulating layer 309. As shown in FIG. A plurality of upper coil elements 82 are disposed on insulating layer 310 . The second chip 3 may further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310 .

The second chip 3 includes a support member that supports the plurality of second MR elements 50B and the plurality of third MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301 a of the substrate 301 . Especially in this embodiment, the support member is constituted by the insulating layer 305 . 9 shows the insulating layer 305, the plurality of second MR elements 50B, the plurality of third MR elements 50C, and the plurality of upper coil elements 82 among the constituent elements of the second chip 3. FIG.

The insulating layer 305 has a plurality of convex surfaces 305c projecting in a direction away from the upper surface 301a of the substrate 301 (Z direction). Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surface 305c is a triangular roof shape formed by moving the triangular shape of the convex surface 305c shown in FIG. 10 along the direction parallel to the U direction. Also, the plurality of convex surfaces 305c are arranged in a direction parallel to the V direction.

Each of the plurality of convex surfaces 305c has an upper end farthest from the upper surface 301a of the substrate 301. As shown in FIG. In this embodiment, the upper end of each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. Here, attention is paid to an arbitrary one convex surface 305c among the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface of the convex surface 305c on the V direction side of the upper end portion of the convex surface 305c. The second inclined surface 305b is a surface of the convex surface 305c on the −V direction side of the upper end portion of the convex surface 305c. The upper end of the convex surface 305c may be the boundary between the first inclined surface 305a and the second inclined surface 305b.

A top surface 301a of the substrate 301 is parallel to the XY plane. Each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b becomes smaller as the distance from the upper surface 301a of the substrate 301 increases.

In this embodiment, since there are a plurality of convex surfaces 305c, there are a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b. The insulating layer 305 has a plurality of first slanted surfaces 305a and a plurality of second slanted surfaces 305b.

The insulating layer 305 includes a plurality of protrusions each protruding in the Z direction. Each of the multiple protrusions extends in a direction parallel to the U direction. The convex surface 305 c is configured by the upper surface of the insulating layer 305 . Also, the plurality of protrusions are arranged in a direction parallel to the V direction.

The plurality of lower electrodes 61B are arranged on the plurality of first inclined surfaces 305a. The plurality of lower electrodes 61C are arranged on the plurality of second inclined surfaces 305b. As described above, each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. The upper surface of each of the plurality of lower electrodes 61C is also inclined with respect to the XY plane. Therefore, it can be said that the plurality of second MR elements 50B and the plurality of third MR elements 50C are arranged on an inclined plane with respect to the XY plane. The insulating layer 305 is a member for supporting each of the plurality of second MR elements 50B and the plurality of third MR elements 50C so as to be tilted with respect to the XY plane.

In this embodiment, each of the plurality of first inclined surfaces 305a is a plane parallel to the U direction and the W1 direction. Each of the plurality of second inclined surfaces 305b is a plane parallel to the U direction and the W2 direction.

Although not shown, the insulating layer 305 also has flat surfaces surrounding the plurality of convex surfaces 305c. The multiple convex surfaces 305c may protrude in the Z direction from the flat surface. Also, the plurality of convex surfaces 305c may be arranged at predetermined intervals so that a flat surface is formed between two adjacent convex surfaces 305c. Alternatively, the insulating layer 305 may have a groove recessed in the -Z direction from the flat surface. In this case, the plurality of convex surfaces 305c may exist within the groove.

Also, the convex surface 305c may be a semi-cylindrical curved surface formed by moving a curved shape (arch shape) along a direction parallel to the U direction. In this case, the first inclined surface 305a becomes a curved surface. The second MR element 50B curves along the curved surface (first inclined surface 305a). Even in this case, for convenience, the magnetization direction of the magnetization fixed layer 52 of the second MR element 50B is defined as a linear direction as described above. Similarly, the second inclined surface 305b is curved. The third MR element 50C curves along the curved surface (second inclined surface 305b). Even in this case, for convenience, the magnetization direction of the magnetization pinned layer 52 of the third MR element 50C is defined as a linear direction as described above.

As shown in FIG. 9, the plurality of second MR elements 50B are arranged in parallel in the U direction and the V direction. A plurality of second MR elements 50B are arranged in a row on one first inclined surface 305a. Similarly, the plurality of third MR elements 50C are arranged so as to line up in plural in each of the U direction and the V direction. A plurality of third MR elements 50C are arranged in a row on one second inclined surface 305b. In this embodiment, the rows of the plurality of second MR elements 50B and the rows of the plurality of third MR elements 50C are alternately arranged in the direction parallel to the V direction.

Note that one second MR element 50B and one third MR element 50C adjacent to each other may or may not be displaced in a direction parallel to the U direction when viewed from the Z direction. good. Two second MR elements 50B adjacent to each other with one third MR element 50C interposed therebetween may or may not be shifted in the direction parallel to the U direction when viewed from the Z direction. may Two third MR elements 50C adjacent to each other with one second MR element 50B interposed therebetween may or may not be shifted in the direction parallel to the U direction when viewed from the Z direction. may

A plurality of second MR elements 50B are connected in series by a plurality of lower electrodes 61B and a plurality of upper electrodes 62B. The above description of the connection method for the plurality of first MR elements 50A also applies to the connection method for the plurality of second MR elements 50B. When the MR element 50 shown in FIG. 11 is the second MR element 50B, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61B, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62B. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

Similarly, a plurality of third MR elements 50C are connected in series by a plurality of lower electrodes 61C and a plurality of upper electrodes 62C. The above description of the connection method for the plurality of first MR elements 50A also applies to the connection method for the plurality of third MR elements 50C. When the MR element 50 shown in FIG. 11 is the third MR element 50C, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61C, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62C. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Also, the plurality of upper coil elements 82 are arranged so as to line up in the X direction. Particularly in this embodiment, when viewed from the Z direction, two upper coil elements 82 overlap each of the plurality of second MR elements 50B and the plurality of third MR elements 50C.

Each of the plurality of lower coil elements 81 extends in a direction parallel to the Y direction. Also, the plurality of lower coil elements 81 are arranged so as to line up in the X direction. The shape and arrangement of the plurality of lower coil elements 81 may be the same as or different from the shape and arrangement of the plurality of upper coil elements 82 .

9 and 10, the plurality of lower coil elements 81 and the plurality of upper coil elements 82 are arranged on the free layer 54 of each of the plurality of second MR elements 50B and the plurality of third MR elements 50C. On the other hand, they are electrically connected to form a second coil 80 that applies a magnetic field parallel to the X direction. Also, the second coil 80 is, for example, free-flowing in the first and second resistance parts R21, R22 of the second detection circuit 20 and the first and second resistance parts R31, R32 of the third detection circuit 30. A magnetic field in the X direction is applied to the layer 54, and the third and fourth resistors R23, R24 of the second detection circuit 20 and the third and fourth resistors R33, R34 of the third detection circuit 30 may be configured such that a magnetic field in the -X direction can be applied to the free layer 54 in . Second coil 80 may also be controlled by processor 40 .

Next, the first to third detection signals will be explained. First, the first detection signal will be described with reference to FIG. When the strength of the component of the target magnetic field in the direction parallel to the U direction changes, the resistance values of the resistors R11 to R14 of the first detection circuit 10 increase and the resistances of the resistors R11 and R13 increase. The resistance values of R12 and R14 decrease, or the resistance values of resistors R11 and R13 decrease and the resistance values of resistors R12 and R14 increase. This changes the potential of each of the signal output terminals E11 and E12. The first detection circuit 10 generates a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11, and generates a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12. is configured to

Next, the second detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the W1 direction changes, the resistance values of the resistors R21 to R24 of the second detection circuit 20 increase and the resistances of the resistors R21 and R23 increase. The resistance values of R22 and R24 decrease, or the resistance values of resistors R21 and R23 decrease and the resistance values of resistors R22 and R24 increase. This changes the potential of each of the signal output terminals E21 and E22. The second detection circuit 20 generates a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21, and generates a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22. is configured to

Next, the third detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the W2 direction changes, the resistance values of the resistors R31 to R34 of the third detection circuit 30 increase and the resistances of the resistors R31 and R33 increase. The resistance values of R32 and R34 decrease, or the resistance values of resistors R31 and R33 decrease and the resistance values of resistors R32 and R34 increase. This changes the potential of each of the signal output terminals E31 and E32. The third detection circuit 30 generates a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31, and generates a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32. is configured to

Next, the configuration and operation of processor 40 will be described. The processor 40 generates a first detection value based on the first detection signals S11, S12, and a second detection value based on the second detection signals S21, S22 and the third detection signals S31, S32. and a third detection value. The first detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the U direction. The second detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The third detected value is a detected value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the first detected value is denoted by the symbol Su, the second detected value by the symbol Sv, and the third detected value by the symbol Sz.

FIG. 12 is a functional block diagram showing the configuration of processor 40. As shown in FIG. The processor 40 includes a first arithmetic circuit 41 , a second arithmetic circuit 42 and a correction circuit 43 . The first arithmetic circuit 41 is configured to execute a first generation process. The first generation process is a process of generating a first initial detection value Sup corresponding to the first detection value Su using the first detection signals S11 and S12.

In the present embodiment, the first arithmetic circuit 41 generates the first initial detection value Sup by calculation including obtaining the difference S11-S12 between the first detection signal S11 and the first detection signal S12. . The first initial detection value Sup may be the difference S11-S12 itself, or may be the difference S11-S12 to which predetermined corrections such as gain adjustment and offset adjustment are added.

The second arithmetic circuit 42 is configured to execute at least part of the second generation processing. The second generation process includes a process of generating a second initial detection value Svp corresponding to the second detection value Sv and a process of generating a third initial detection value Szp corresponding to the third detection value Sz. contains. At least the second detection signals S21 and S22 are used for the process of generating the second initial detection value Svp. In the present embodiment, in both the process of generating the second initial detection value Svp and the process of generating the third initial detection value Szp, the second detection signals S21, S22 and the third detection signals S31, S32 is used.

In this embodiment, the second generation process includes a first process, a second process, and a third process. A first process is a process of generating a first value S1 using the second detection signals S21 and S22. A second process is a process of generating a second value S2 using the third detection signals S31 and S32. A third process is a process of generating a second initial detection value Svp and a third initial detection value Szp using the first value S1 and the second value S2.

Particularly in this embodiment, the second arithmetic circuit 42 is configured to execute first processing and second processing. The first process is a process of generating the first value S1 by calculation including obtaining the difference S21-S22 between the second detection signal S21 and the second detection signal S22. The second process is a process of generating the second value S2 by calculation including obtaining the difference S31-S32 between the third detection signal S31 and the third detection signal S32.

The third process includes a process of calculating values S3 and S4 using the following equations (1) and (2).

S3=(S2+S1)/(2cosα) (1)
S4=(S2-S1)/(2sinα) (2)

The third process further includes a process of generating second and third initial detection values Svp, Szp using the values S3, S4. The second initial detection value Svp generated by the third process may be the value S3 itself, or may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment are added. good. Similarly, the third initial detection value Szp generated by the third process may be the value S4 itself, or the value S4 to which predetermined corrections such as gain adjustment and offset adjustment are added. There may be.

The correction circuit 43 uses the first to third initial detection values Sup, Svp and Szp to generate first to third detection values Su, Sv and Sz. Particularly in the present embodiment, the correction circuit 43 performs the third process of the second generation process, the first correction process, and the It is configured to execute a second correction process and a determination process.

In the first correction process, the first initial detection value Sup is updated one or more times. The last updated first initial detection value Sup is hereinafter referred to as the latest first initial detection value Sup. For convenience, the first initial detection value Sup after the execution of the first generation process and before the execution of the first correction process for the first time is also the latest first initial detection value Sup. To tell.

In the second correction process, each of the second initial detection value Svp and the third initial detection value Szp is updated one or more times. Hereinafter, the last updated second initial detection value Svp will be referred to as the latest second initial detection value Svp, and the last updated third initial detection value Szp will be referred to as the latest third initial detection value Szp. To tell.

The first correction process corrects the first initial detection value Sup (the latest first initial detection value Sup) using the second correction value Svc generated from the latest second initial detection value Svp. This is the process of updating the first initial detection value Sup.

The second correction value Svc may be a value calculated by an operation including multiplying the latest second initial detection value Svp by the second correction coefficient. Hereinafter, the last calculated second correction value Svc is referred to as the latest second correction value Svc. In the first correction process, the latest first initial detection value Sup and the latest second correction value Svc are substituted into an equation expressed using the first initial detection value Sup and the second correction value Svc. It may be a process of calculating (updating) the first initial detection value Sup by doing so. The above formula performs a first calculation including multiplying the latest first initial detection value Sup by the second correction value Svc, and converts the value obtained by the first calculation to the latest first initial detection value Sup. and a second operation of adding to the detected value Sup or subtracting from the latest first initial detected value Sup.

The second correction process uses the first correction value Suc generated from the latest first initial detection value Sup to obtain the second initial detection value Svp (the latest second initial detection value Svp) and the third correction value Svp. This is a process of correcting the initial detection value Szp (the latest third initial detection value Szp) of and updating the second and third initial detection values Svp and Szp. Especially in this embodiment, the second correction process includes a fourth process, a fifth process, and a sixth process. A fourth process is a process of correcting the first and second values S1 and S2 using the first correction value Suc and updating the first and second values S1 and S2. A fifth process is a process of generating second and third initial detection values Svp and Szp using the latest first and second values S1 and S2. A sixth process is a process of updating the second and third initial detection values Svp and Szp using the second and third initial detection values Svp and Szp generated by the fifth process. Note that the latest first value S1 means the last updated first value S1. Also, the latest second value S2 means the last updated second value S2. For convenience, the first value S1 and the second value S2 after the first and second processes are executed and before the first third process is executed are also the latest first value S1 and the latest second value S2.

The content of the fifth process is substantially the same as the third process of the second generation process. That is, the second correction process substantially includes the third process of the second generation process. A fifth process is a process of calculating values S3 and S4 using the latest first and second values S1 and S2 and formulas (1) and (2), and a process of calculating values S3 and S4 using the values S3 and S4. and a process of generating the third initial detection values Svp and Szp.

The first correction value Suc may be a value calculated by an operation including multiplying the latest first initial detection value Sup by the first correction coefficient. Hereinafter, the last calculated first correction value Suc is referred to as the latest first correction value Suc. In the fourth process of the second correction process, the latest first value S1 and the latest first correction are added to the first equation expressed using the first value S1 and the first correction value Suc. By substituting the value Suc, the first value S1 is calculated (updated), and the latest second value is added to the second equation expressed using the second value S2 and the first correction value Suc. It may be a process of calculating (updating) the second value S2 by substituting S2 and the latest first correction value Suc. The first formula includes a third calculation including multiplying the latest first value S1 by the first correction value Suc, and converting the value obtained by the third calculation to the latest first value S1 and a fourth operation of adding to or subtracting from the latest first value S1. The second equation includes a fifth operation including multiplying the latest second value S2 by the first correction value Suc, and converting the value obtained by the fifth operation to the latest second value S2 and a sixth operation of adding to or subtracting from the latest second value S2.

The determination process determines the latest first initial detection value Sup as the first detection value Su, the latest second initial detection value Svp as the second detection value Sv, and the latest third initial detection value Sv. This is the process of determining the detected value Szp as the third detected value Sz. The correction circuit 43 executes the determination process after alternately executing the first correction process and the second correction process one or more times. The correction circuit 43 may perform the first correction process and the second correction process once, twice, or three times or more. .

The correction circuit 43 may first update the second and third initial detection values Svp and Szp. That is, the correction circuit 43 may execute the second correction process for the first time before executing the first correction process for the first time.

The first second correction process is executed after the first and second processes of the second generation process are executed. Also, as described above, the second correction process substantially includes the third process of the second generation process. Therefore, by executing the second correction process for the first time, the second generation process is substantially executed.

Note that the configuration of the processor 40 is not limited to the example shown in FIG. For example, the first arithmetic circuit 41, the second arithmetic circuit 42 and the correction circuit 43 may be substantially one circuit. In this case, one circuit may be configured to be able to perform all the processes performed by the first arithmetic circuit 41 , the second arithmetic circuit 42 and the correction circuit 43 . Alternatively, instead of providing the correction circuit 43, the first arithmetic circuit 41 executes part of the processing executed by the correction circuit 43 (processing related to the first initial detection value Sup and the first detection value Su), The second arithmetic circuit 42 executes part of the other processing (processing related to the second and third initial detection values Svp, Szp and the second and third detection values Sv, Sz) executed by the correction circuit 43. may be configured to In this case, the first and second initial detection values Sup and Svp may be transmitted and received between the first arithmetic circuit 41 and the second arithmetic circuit 42 .

Next, effects of a series of processes executed by the correction circuit 43 will be described. First, the first to third detection circuits of the comparative example will be described. The configuration of the first detection circuit of the comparative example detects the magnetization direction of the free layer 54 of each of the plurality of first MR elements 50A when no target magnetic field is applied to the plurality of first MR elements 50A. Except for this, the configuration is the same as that of the first detection circuit 10 shown in FIG. In the first detection circuit of the comparative example, the magnetization direction of the free layer 54 is the V direction in all of the plurality of first MR elements 50A in the above case.

The configuration of the second detection circuit of the comparative example detects the magnetization direction of the free layer 54 of each of the plurality of second MR elements 50B when no target magnetic field is applied to the plurality of second MR elements 50B. Except for this, the configuration is the same as that of the second detection circuit 20 shown in FIG. In the second detection circuit of the comparative example, the magnetization direction of the free layer 54 is the U direction in all of the plurality of second MR elements 50B in the above case.

The configuration of the third detection circuit of the comparative example detects the magnetization direction of the free layer 54 of each of the plurality of third MR elements 50C when no target magnetic field is applied to the plurality of third MR elements 50C. Except for this, the configuration is the same as that of the third detection circuit 30 shown in FIG. In the third detection circuit of the comparative example, the magnetization direction of the free layer 54 is the U direction in all of the plurality of third MR elements 50C in the above case.

In the first detection circuit of the comparative example, the magnetic field in the direction parallel to the V direction (the component of the target magnetic field in the direction parallel to the V direction) has the direction of the easy axis of magnetization substantially parallel to the V direction. It has the effect of changing the anisotropic magnetic field based on shape anisotropy. This anisotropic magnetic field acts on the magnetization of the free layer 54 . Therefore, in the first detection circuit of the comparative example, the magnetization of the free layer 54 when detecting the component of the target magnetic field in the direction parallel to the U direction depends on the presence or absence of the magnetic field in the direction parallel to the V direction and the change in its intensity. direction changes. As a result, the first detection signals S11 and S12 are obtained when the component of the target magnetic field in the direction parallel to the U direction is detected in the absence of the magnetic field in the direction parallel to the V direction. , and as a result, the difference S11-S12, which substantially corresponds to the first detection value Su, also deviates.

On the other hand, in the present embodiment, the magnetization direction of the free layer 54 is made different for each resistance portion. Especially in the present embodiment, the magnetization of the free layer 54 is adjusted so that the deviation of the first detection signals S11 and S12 caused by the magnetic field in the direction parallel to the V direction can be offset when calculating the difference S11−S12. setting the direction. Thus, according to the present embodiment, it is possible to suppress deviation of the difference S11-S12 caused by the magnetic field in the direction parallel to the V direction. As a result, according to the present embodiment, it is possible to reduce the error in the first detection value Su due to the magnetic field in the direction parallel to the V direction.

The above description of the first detection circuit of the comparative example also applies to the second and third detection circuits of the comparative example. In the second detection circuit of the comparative example, the second detection signals S21 and S22 correspond to the second detection signals S21 and S22 when the component of the target magnetic field parallel to the W1 direction is detected in the absence of the magnetic field parallel to the U direction. 2 detection signals S21 and S22, and as a result, the first value S1 also deviates. Further, in the third detection circuit of the comparative example, when the third detection signals S31 and S32 detect the component of the target magnetic field parallel to the W2 direction in the absence of the magnetic field parallel to the U direction, As a result, the second value S2 also deviates from the third detection signals S31 and S32. For these reasons, the value S3 substantially corresponding to the second detection value Sv and the value S4 substantially corresponding to the third detection value Sz also deviate. In contrast, according to the present embodiment, it is possible to suppress the deviation of the values S3 and S4 due to the magnetic field in the direction parallel to the U direction. As a result, according to the present embodiment, it is possible to reduce errors in the second and third detection values Sv and Sz due to the magnetic field parallel to the U direction.

A series of processes executed by the correction circuit 43 are the deviation of the difference S11-S12 suppressed as described above, that is, the deviation of the first initial detection value Sup, and the deviation of the value S3, that is, the second initial detection value Svp and the deviation of the value S4, that is, the deviation of the third initial detection value Szp. In the first correction process, the first initial detection value Sup is corrected using the second initial detection value Svp having a corresponding relationship with the intensity of the component in the direction parallel to the V direction of the target magnetic field. By using the second initial detection value Svp, it is possible to correct the first initial detection value Sup according to the presence or absence of the magnetic field in the direction parallel to the V direction and the change in its strength. Specifically, since the second correction value Svc changes according to the presence or absence of the magnetic field in the direction parallel to the V direction and the change in its strength, the first initial detection value Sup can be corrected with high accuracy. .

The equation expressed using the second correction coefficient and the above-described first initial detection value Sup and second correction value Svc increases the first initial detection value Sup as the deviation of the first initial detection value Sup increases. As the amount of correction of the value Sup increases, the positive or negative of the amount of correction of the first initial detection value Sup is defined to change depending on whether the first initial detection value Sup shifts to decrease or increase. may be For example, when the first initial detection value Sup deviates to decrease, the correction amount of the first initial detection value Sup corresponding to the amount of decrease in the first initial detection value Sup is the first initial detection value. May be added to Sup. Further, when the first initial detection value Sup deviates to increase, the correction amount of the first initial detection value Sup corresponding to the increase amount of the first initial detection value Sup is the first initial detection value. It may be subtracted from Sup.

The above description of the first correction process also applies to the second correction process. That is, in the second correction process, the first and second values S1 and S2 are corrected using the first initial detection value Sup having a corresponding relationship with the intensity of the component of the target magnetic field parallel to the U direction. do. Thereby, the second and third initial detection values Svp and Szp are substantially corrected using the first initial detection value Sup having a corresponding relationship with the intensity of the component in the direction parallel to the U direction of the target magnetic field. are doing. By using the first initial detection value Sup, the first and second values S1 and S2 (second and third initial detection values Svp, Szp) can be corrected. Specifically, since the first correction value Suc changes according to the presence or absence of the magnetic field in the direction parallel to the U direction and changes in its intensity, the first and second values S1 and S2 (second and second 3 initial detection values Svp, Szp) can be accurately corrected.

According to the first correction coefficient and the above-described first and second equations, as the deviation of the second initial detection value Svp increases, the correction amount of the second initial detection value Svp increases and the second initial detection value Svp increases. The correction amount of the second initial detection value Svp may be defined to be positive or negative depending on whether the detection value Svp is deviated to decrease or increase.

The first correction coefficient and the second correction coefficient are set in advance so that the deviation of the first initial detection value Sup, the deviation of the second initial detection value Svp, and the deviation of the third initial detection value Szp are suppressed. May be selected. The first correction coefficient and the second correction coefficient may be determined using numerical analysis or the like based on multiple measurement results.

Note that if the first and second correction processes are applied to the first to third initial detection values Sup, Svp, and Szp generated by the first to third detection circuits of the comparative example, It is necessary to change the contents of the first and second correction processes, such as changing the sign of the first and second correction coefficients, according to the direction of the applied magnetic field. In contrast, in the present embodiment, the same first and second correction processes can be applied regardless of the direction of the applied magnetic field. content can be simplified.

By the way, as means for suppressing the deviation of each of the first to third initial detection values Sup, Svp, and Szp, for each of the first to third detection circuits 10, 20, and 30, It is conceivable to provide a shield made of a magnetic material so that the magnetic field is not applied. For example, the first detection circuit 10 could be provided with a shield configured to substantially attenuate magnetic fields parallel to the U direction, but block or attenuate magnetic fields parallel to the V direction. be done. Similarly, the second and third detection circuits 20 and 30 include a magnetic field parallel to the W1 direction and a magnetic field parallel to the W2 direction that are substantially attenuated, but a magnetic field parallel to the U direction. It is conceivable to provide a shield configured to reduce or attenuate the noise. However, in the present embodiment, the deviation of each of the first to third initial detection values Sup, Svp and Szp is suppressed without providing shields for each of the first to third detection circuits 10, 20 and 30. are doing. Thus, according to this embodiment, the structure of the magnetic sensor 1 can be simplified.

In the present embodiment, the first initial detection value Sup is obtained by detecting the component of the target magnetic field in the direction parallel to the reference plane 4a, that is, the XY plane (component of the target magnetic field in the direction parallel to the U direction). are generated using the first detection signals S11 and S12 generated by . The second and third initial detection values Svp and Szp are the component of the target magnetic field in one direction inclined with respect to the reference plane 4a, that is, the XY plane (the component in the direction parallel to the W1 direction of the target magnetic field) and the target magnetic field second detection signals S21 and S22 generated by detecting components in another direction (components parallel to the W2 direction of the target magnetic field) inclined with respect to the reference plane 4a, that is, the XY plane, and It is generated using the third detection signals S31 and S32. Thus, in the present embodiment, the first to third initial detections generated by detecting the component of the target magnetic field in the direction parallel to the XY plane and the component in the direction inclined with respect to the XY plane It is characterized by suppressing deviations of the values Sup, Svp, and Szp.

As described above, in the present embodiment, the detection value (first initial detection value Sup) corresponding to the component of the target magnetic field parallel to the U direction is The detected value (second initial detection value Svp) corresponding to the component of the target magnetic field in the direction parallel to the V direction, which is generated by detecting the component of the target magnetic field, is the component of the target magnetic field in the direction parallel to the V direction. A detection value (third initial detection value Szp) that is not generated by the detection and corresponds to the component of the target magnetic field parallel to the Z direction also detects the component of the target magnetic field parallel to the Z direction. It is not generated by Therefore, in the present embodiment, it may be possible to generate the first initial detection value Sup with higher accuracy than the second and third initial detection values Svp and Szp. In this case, by executing the second correction process using the first initial detection value Sup before executing the first correction process, the first to third initial detection values Sup, Svp, Szp are It can be updated with high precision.

Further, in the present embodiment, the first detection circuit 10 for generating the first detection signals S11 and S12 is included in the first chip 2, and the second detection circuit for generating the second detection signals S21 and S22 is included. The circuit 20 and the third detection circuit 30 for generating the third detection signals S31, S32 are included in the second chip 3. FIG. Thus, in the present embodiment, each of the first to third initial detection values Sup, Svp, Szp generated using the detection circuits included in each of the two physically separated chips It is characterized by suppressing the deviation of

Next, the results of a simulation that investigated the error of the second detection value Sv will be described. In the simulation, a target magnetic field including at least a U-direction component and a V-direction component was applied to the magnetic sensor device 100 to generate the first to third detection values Su, Sv, and Sz. In the simulation, the first to third detected values Su, Sv, and Sz were respectively the intensity of the component of the target magnetic field parallel to the U direction, the intensity of the component of the target magnetic field parallel to the V direction, and the target magnetic field. The differences S11-S12 and the values S3 and S4 were corrected so as to represent the intensity of the component in the direction parallel to the Z direction of the first to third initial detection values Sup, Svp and Szp. Also, in the simulation, the first second correction process was performed before the first first correction process was performed.

In the simulation, the determination process was executed each time the second correction process and the first correction process were alternately executed to generate the first to third detection values Su, Sv, and Sz. Also, the difference between the intensity of the component in the V direction of the target magnetic field and the second detection value Sv was divided by the intensity of the component in the V direction of the target magnetic field to obtain the error of the second detection value Sv.

Further, in the simulation, the third process of the second generation process is executed before the first and second correction processes are executed, the second initial detection value Svp is obtained, and the second initial detection value Svp is obtained. From Svp, the error of the second detection value Sv when the number of executions of each of the first and second correction processes is 0 is obtained. That is, the difference between the intensity of the component in the V direction of the target magnetic field and the second initial detection value Svp is divided by the intensity of the component in the V direction of the target magnetic field. It was obtained as the error of the second detection value Sv when the number of executions was 0. The error of the second detection value Sv when the number of executions of each of the first and second correction processes was 0 was 3.54%.

Further, the error of the second detection value Sv was 0.13% when the number of executions of each of the first and second correction processes was one. Also, the error in the second detection value Sv was 0% when the number of executions of each of the first and second correction processes was two and three.

As understood from the simulation results, the error of the second detection value Sv can be reduced by executing the first and second correction processes once. Also, by executing the first and second correction processes twice, respectively, the error in the second detection value Sv can be made almost zero. Even if the first and second correction processes are executed three times each, the error of the second detection value Sv is almost zero. From the viewpoint of the load on processor 40, the number of executions of each of the first and second correction processes is preferably two.

The above description of the second detection value Sv also applies to the first detection value Su and the third detection value Sz.

[Second embodiment]
Next, a magnetic sensor device according to a second embodiment of the invention will be described. In this embodiment, the magnetization direction of the free layer 54 of the MR element 50 is different from that in the first embodiment.

The magnetization direction of the free layer 54 of the MR element 50 will be described below using the first to fourth magnetization directions defined in the first embodiment. FIG. 13 is a circuit diagram showing the circuit configuration of the first detection circuit 10. As shown in FIG. FIG. 14 is a circuit diagram showing the circuit configuration of the second detection circuit 20. As shown in FIG. FIG. 15 is a circuit diagram showing the circuit configuration of the third detection circuit 30. As shown in FIG.

As in the first embodiment, in the first detection circuit 10, the first magnetization direction is the U direction, the second magnetization direction is the -U direction, and the third magnetization direction is the V direction. , and the fourth magnetization direction is the -V direction. In the present embodiment, the magnetization of the free layer 54 in each of the first and fourth resistance sections R11 and R14 is in the third magnetization direction (V direction). The magnetization of the free layer 54 in each of the second and third resistance sections R12 and R13 has a component in the fourth magnetization direction (-V direction) when the target magnetic field is not applied to the first MR element 50A. contains.

Further, in the present embodiment, the first coil 70 (see FIG. 3), for example, applies a magnetic field in the X direction to the free layers 54 in the first and fourth resistance sections R11 and R14, and a magnetic field in the -X direction can be applied to the free layer 54 in the third resistance portions R12 and R13.

Further, as in the first embodiment, in the second detection circuit 20, the first magnetization direction is the W1 direction, the second magnetization direction is the −W1 direction, and the third magnetization direction is the U direction and the fourth magnetization direction is the -U direction. In the present embodiment, the magnetization of the free layer 54 in each of the first and fourth resistance sections R21 and R24 is in the third magnetization direction (U direction). The magnetization of the free layer 54 in each of the second and third resistance sections R22 and R23 has a component in the fourth magnetization direction (-U direction) when no target magnetic field is applied to the second MR element 50B. contains.

Further, as in the first embodiment, in the third detection circuit 30, the first magnetization direction is the W2 direction, the second magnetization direction is the −W2 direction, and the third magnetization direction is the U direction and the fourth magnetization direction is the -U direction. In the present embodiment, the magnetization of the free layer 54 in each of the first and fourth resistance sections R31 and R34 is in the third magnetization direction (U direction). The magnetization of the free layer 54 in each of the second and third resistance sections R32 and R33 has a component in the fourth magnetization direction (-U direction) when no target magnetic field is applied to the third MR element 50C. contains.

In addition, in the present embodiment, the second coil 80 (see FIG. 3) includes, for example, the first and fourth resistors R21 and R24 of the second detection circuit 20 and the first coil of the third detection circuit 30. and a magnetic field in the X direction is applied to the free layer 54 in the fourth resistance units R31 and R34, and the second and third resistance units R22 and R23 of the second detection circuit 20 and the third detection circuit 30 A magnetic field in the -X direction may be applied to the free layer 54 in the second and third resistance sections R32 and R33.

Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

[Third embodiment]
Next, a third embodiment of the invention will be described. A magnetic sensor device 100 according to the present embodiment includes the magnetic sensor 101 according to the present embodiment and the processor 40 described in the first embodiment. The magnetic sensor 101 may have the same external shape as the first chip 2 or the second chip 3 in the first embodiment.

The configuration of magnetic sensor 101 according to the present embodiment will be described below with reference to FIGS. 16 to 19. FIG. FIG. 16 is a functional block diagram showing the configuration of the magnetic sensor device 100 according to this embodiment. FIG. 17 is a circuit diagram showing the circuit configuration of the first detection circuit in this embodiment. FIG. 18 is a circuit diagram showing the circuit configuration of the second detection circuit in this embodiment. FIG. 19 is a circuit diagram showing the circuit configuration of the third detection circuit in this embodiment.

The magnetic sensor 101 includes a first detection circuit 110 , a second detection circuit 120 and a third detection circuit 130 . Each of the first through third detection circuits 110, 120, 130 includes a plurality of MR elements.

The first detection circuit 110 is configured to detect a component of the target magnetic field in a direction parallel to the U direction and generate first detection signals S111 and S112 having a correspondence relationship with this component. The second detection circuit 120 is configured to detect a component of the target magnetic field in a direction parallel to the V direction and generate second detection signals S121 and S122 having a correspondence relationship with this component. The third detection circuit 130 is configured to detect a component of the target magnetic field in a direction parallel to the Z direction and generate third detection signals S131 and S132 having a correspondence relationship with this component.

The circuit configuration of the first detection circuit 110 is basically the same as the circuit configuration of the first detection circuit 10 in the first embodiment. In FIG. 17, the first to fourth resistance sections of the first detection circuit 110 corresponding to the first to fourth resistance sections R11, R12, R13 and R14 of the first detection circuit 10 are denoted by reference numerals R111 and R111, respectively. They are indicated by R112, R113 and R114.

The circuit configuration of the second detection circuit 120 is basically the same as the circuit configuration of the second detection circuit 20 in the first embodiment. In FIG. 18, the first to fourth resistance sections of the second detection circuit 120 corresponding to the first to fourth resistance sections R21, R22, R23 and R24 of the second detection circuit 20 are denoted by R121 and R121, respectively. They are indicated by R122, R123 and R124.

The circuit configuration of the third detection circuit 130 is basically the same as the circuit configuration of the third detection circuit 30 in the first embodiment. In FIG. 19, the first to fourth resistance sections of the third detection circuit 130 corresponding to the first to fourth resistance sections R31, R32, R33 and R34 of the third detection circuit 30 are indicated by R131 and R131, respectively. They are indicated by R132, R133 and R134.

The resistance portions R111 to R114, R121 to R124, R131 to R134 are composed of a plurality of MR elements. A plurality of MR elements of the magnetic sensor 101 are denoted by reference numeral 150 below. The configuration of the MR element 150 may be the same as the configuration of the MR element 50 described in the first embodiment. That is, the MR element 150 has at least the magnetization fixed layer 52, the free layer 54 and the gap layer 53 (see FIG. 11).

17 to 19, the filled arrows represent the magnetization direction of the magnetization pinned layer 52 of the MR element 150. In FIG. In the example shown in FIG. 17, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R111 and R113 is the U direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance sections R112 and R114 is the -U direction. Also, the free layer 54 of each of the plurality of MR elements 150 of the first detection circuit 110 has shape anisotropy in which the direction of easy magnetization is parallel to the V direction.

In the example shown in FIG. 18, the magnetization direction of the magnetization pinned layer 52 in each of the first and third resistance sections R121 and R123 is the V direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and fourth resistance sections R122 and R124 is the -V direction. Also, the free layer 54 of each of the plurality of MR elements 150 of the second detection circuit 120 has shape anisotropy such that the direction of easy magnetization is parallel to the U direction.

The free layer 54 of each of the plurality of MR elements 150 of the third detection circuit 130 has shape anisotropy in which the direction of easy magnetization is parallel to the V direction. The magnetization direction of the magnetization fixed layer 52 in the third detection circuit 130 will be described later.

Next, a specific structure of the magnetic sensor 101 will be described. The magnetic sensor 101 includes a substrate having a top surface, a first portion including a first detection circuit 110, a second portion including a second detection circuit 120, and a third portion including a third detection circuit . part and It is assumed that the top surface of the substrate is parallel to the XY plane. The first to third portions are formed on the substrate. The structure of the first portion and the structure of the second portion are the same as the structure of the first chip 2 (excluding the substrate 201) described in the first embodiment. The plurality of MR elements 150 included in the first portion each have a shape elongated in the V direction. The plurality of MR elements 150 included in the second portion each have a shape elongated in the U direction. The first and second portions may or may not include the first coil 70 described in the first embodiment.

Next, the structure of the third portion of magnetic sensor 101 will be described with reference to FIGS. 20 and 21. FIG. FIG. 20 is a perspective view showing multiple MR elements 150 and multiple yokes. FIG. 21 is a side view showing multiple MR elements 150 and multiple yokes.

The structure of the third part is basically the same as the structure of the first part. The third portion further includes a plurality of yokes 151 each made of soft magnetic material. Each of the plurality of yokes 151 may have a rectangular parallelepiped shape elongated in the V direction. Each of the plurality of yokes 151 is configured to receive an input magnetic field including an input magnetic field component parallel to the Z direction and generate an output magnetic field. The output magnetic field includes an output magnetic field component in a direction parallel to the U direction, which varies according to the input magnetic field component.

Each of the plurality of yokes 151 has a first end face 151a and a second end face 151b located at both ends in the direction parallel to the U direction. In each of the plurality of yokes 151, the first end face 151a is positioned at the end of the yoke 151 in the -U direction, and the second end face 151b is positioned at the end of the yoke 151 in the U direction. Also, the plurality of yokes 151 are arranged in a direction parallel to the U direction.

As shown in FIGS. 20 and 21, in the third portion, a plurality of MR elements 150 are aligned along the first end surface 150a and a plurality of MR elements 150 are aligned along the second end surface 150b. Standing in line. Hereinafter, the plurality of MR elements 150 arranged along the first end surface 150a are denoted by reference numeral 150A, and the plurality of MR elements 150 arranged along the second end surface 150b are denoted by reference numeral 150B. In the third portion, a plurality of MR elements 150A and a plurality of MR elements 150B are arranged such that a row of MR elements 150A and a row of MR elements 150B are alternately arranged in a direction parallel to the U direction. arrayed. The plurality of MR elements 150A and the plurality of MR elements 150B need not overlap the plurality of yokes 151 when viewed from above.

Although not shown, the third portion further includes a plurality of first lower electrodes, a plurality of second lower electrodes, a plurality of first upper electrodes, and a plurality of second upper electrodes. there is A plurality of MR elements 150A are connected in series by a plurality of first lower electrodes and a plurality of first upper electrodes. A plurality of MR elements 150B are connected in series by a plurality of second lower electrodes and a plurality of second upper electrodes.

Next, the multiple yokes 151 will be described in detail. When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by each of the plurality of MR elements 150A is the U direction, and the direction of the output magnetic field component received by each of the plurality of MR elements 150B is the -U direction. Become. When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component received by each of the plurality of MR elements 150A is the -U direction, and the direction of the output magnetic field component received by each of the plurality of MR elements 150B is the U direction. become.

Next, the first to third detection signals in this embodiment will be described. First, the first detection signal will be briefly described. The manner in which the resistance values of the resistance units R111 to R114 of the first detection circuit 110 change is the same as the resistance values of the resistance units R11 to R14 of the first detection circuit 10 described in the first embodiment. is the same as the mode of change of The first detection circuit 110 generates a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S111, and generates a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S112. is configured to

Next, the second detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the V direction changes, the resistance values of the resistors R121 to R124 of the second detection circuit 120 increase and the resistances of the resistors R121 and R123 increase. The resistance values of R122 and R124 decrease, or the resistance values of resistors R121 and R123 decrease and the resistance values of resistors R122 and R124 increase. This changes the potential of each of the signal output terminals E21 and E22. The second detection circuit 120 generates a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S121, and generates a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S122. is configured to

Next, the third detection signal will be described with reference to FIGS. 19 to 21. FIG. The first resistance portion R131 and the second resistance portion R132 are composed of a plurality of MR elements 150A. The third resistance portion R133 and the fourth resistance portion R134 are composed of a plurality of MR elements 150B.

Here, one region in which the plurality of MR elements 150 forming the third detection circuit 130 are arranged is divided into a first region and a second region. The plurality of MR elements 150A forming the first resistance section R131 and the plurality of MR elements 150B forming the fourth resistance section R134 may be arranged in the first region. The plurality of MR elements 150A forming the second resistance section R132 and the plurality of MR elements 150B forming the third resistance section R133 may be arranged in the second region.

The magnetization direction of the magnetization pinned layer 52 in each of the first and fourth resistance units R131 and R134 is the U direction. The magnetization direction of the magnetization pinned layer 52 in each of the second and third resistance portions R132 and R133 is the -U direction.

When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by the plurality of MR elements 150A in the first and second resistance units R131 and R132 is the U direction, and the direction of the output magnetic field component is the U direction. The direction of the output magnetic field components received by the plurality of MR elements 150B in R133 and R134 is the -U direction. In this case, the resistance values of the plurality of MR elements 150A in the first resistance section R131 and the plurality of MR elements 150B in the third resistance section R133 decrease compared to the state in which no output magnetic field component exists, The resistance values of the first and third resistance units R131 and R133 also decrease. In addition, the resistance values of each of the MR elements 150A in the second resistance section R132 and the plurality of MR elements 150B in the fourth resistance section R134 increase compared to the state where there is no output magnetic field component. The resistance values of the second and fourth resistance sections R132 and R134 also increase.

When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component and the change in the resistance values of the first to fourth resistors R131 to R134 are the same when the direction of the input magnetic field component is the Z direction. is the opposite.

As described above, when the direction and intensity of the input magnetic field component change, the resistance values of the resistors R131 to R134 of the third detection circuit 130 increase, while the resistances of the resistors R131 and R133 increase. The resistance value of R134 decreases, or the resistance values of resistors R131 and R133 decrease and the resistance values of resistors R132 and R134 increase. This changes the potential of each of the signal output terminals E31 and E32. The third detection circuit 130 generates a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S131, and generates a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S132. is configured to

Next, the configuration and operation of processor 40 in this embodiment will be described. FIG. 22 is a functional block diagram showing the configuration of processor 40 in this embodiment. In this embodiment, the processor 40 generates the first detection value Su corresponding to the component of the target magnetic field in the direction parallel to the U direction based on the first detection signals S111 and S112, and generates the second detection signal Based on S121 and S122, a second detection value Sv corresponding to the component of the target magnetic field in the direction parallel to the V direction is generated, and based on the third detection signals S131 and S132, the target magnetic field in the direction parallel to the Z direction is configured to generate a third detection value Sz corresponding to the component of .

The processor 40 in this embodiment has a first arithmetic circuit 141, a second arithmetic circuit 142, and a third arithmetic circuit 143 instead of the first and second arithmetic circuits in the first embodiment. and The first arithmetic circuit 141 is configured to execute a first generation process. The content of the first generation process in this embodiment is the same as in the first embodiment. That is, the first generation processing in the present embodiment is processing for generating the first initial detection value Sup corresponding to the first detection value Su using the first detection signals S111 and S112. The first arithmetic circuit 141 generates the first initial detection value Sup by calculation including obtaining the difference S111-S112 between the first detection signal S111 and the first detection signal S112. The first initial detection value Sup may be the difference S111-S112 itself, or may be the difference S111-S112 to which predetermined corrections such as gain adjustment and offset adjustment are added.

The second arithmetic circuit 142 is configured to execute a second generation process. The contents of the second generation process in this embodiment are different from those in the first embodiment. The second generation process in the present embodiment is a process of generating the second initial detection value Svp corresponding to the second detection value Sv using the second detection signals S121 and S122. The second arithmetic circuit 142 generates the second initial detection value Svp by calculation including obtaining the difference S121-S122 between the second detection signal S121 and the second detection signal S122. The second initial detection value Svp may be the difference S121-S122 itself, or may be the difference S121-S122 to which predetermined corrections such as gain adjustment and offset adjustment are added.

The third arithmetic circuit 143 is configured to execute a third generation process. The third generation process is a process of generating the third detection value Sz using the third detection signals S131 and S132. The third arithmetic circuit 143 generates the third detection value Sz by calculation including obtaining the difference S131-S132 between the third detection signal S131 and the third detection signal S132. The third detection value Sz may be the difference S131-S132 itself, or may be the difference S131-S132 to which predetermined corrections such as gain adjustment and offset adjustment are added.

Further, in this embodiment, the correction circuit 43 is configured not to generate the third detection value Sz. Moreover, in the present embodiment, the contents of the determination process are different from those in the first embodiment. The determination processing in the present embodiment includes processing for determining the first detection value Su and the second detection value Sv, but does not include processing for determining the third detection value Sz.

Further, in the present embodiment, the correction circuit 43 executes the determination process after alternately executing the first correction process and the second correction process. The correction circuit 43 may perform the first correction process and the second correction process once each, twice each, or three times or more each. . Further, the correction circuit 43 may perform updating of the second initial detection value Svp first. That is, the correction circuit 43 may execute the second correction process for the first time before executing the first correction process for the first time.

Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

It should be noted that the present invention is not limited to the above embodiments, and various modifications are possible. For example, the magnetic sensor of the present invention may be one in which the first chip 2 and the second chip 3 are integrated.

Also, the second chip 3 includes only the second detection circuit configured to detect the component of the target magnetic field in the direction parallel to the V direction instead of the second and third detection circuits 20 and 30. may contain. Alternatively, the second chip 3, instead of the second and third detection circuits 20, 30, includes a second detection circuit configured to detect a component of the target magnetic field in a direction parallel to the V direction; and a third detection circuit configured to detect a component of the target magnetic field in a direction parallel to the Z-direction.

Further, the second arithmetic circuit 42 in the first embodiment is configured to be able to execute the third process of the second generation process in addition to the first and second processes of the second generation process. may have been In this case, the correction circuit 43 uses the second and third initial detection values Svp and Szp generated by the second arithmetic circuit 42 instead of the first and second values S1 and S2 to obtain the second may be performed. In the second correction process, the latest second initial detection value Svp and the latest first correction value are added to the first equation expressed using the second initial detection value Svp and the first correction value Suc. By substituting Suc, the second initial detection value Svp is calculated (updated), and the latest first A process of calculating (updating) the third initial detection value Szp by substituting the initial detection value Szp of No. 3 and the latest first correction value Suc may be employed. The first expression is an operation including multiplying the latest second initial detection value Svp by the first correction value Suc, and applying the value obtained by this operation to the latest second initial detection value Svp. It may be an expression including an addition operation or a subtraction operation from the latest second initial detection value Svp. The second expression is an operation including multiplying the latest third initial detection value Szp by the first correction value Suc, and applying the value obtained by this operation to the latest third initial detection value Szp. It may be an expression including an addition operation or a subtraction operation from the latest third initial detection value Szp.

As described above, the magnetic sensor device of the present invention includes a first detection circuit configured to detect a unidirectional component of a target magnetic field, which is a magnetic field to be detected, and generate a first detection signal. , a second detection circuit configured to detect another directional component of the target magnetic field to generate a second detection signal; and a processor.

The processor performs a first generation process of generating a first initial detection value using the first detection signal and a second generation process of generating a second initial detection value using the second detection signal. , a first correction process of correcting the first initial detection value using a second correction value generated from the latest second initial detection value to update the first initial detection value; a second correction process of correcting the second initial detection value using a first correction value generated from the first initial detection value to update the second initial detection value; Determining the initial detection value as the first detection value having a corresponding relationship with the component of the target magnetic field parallel to the first reference direction, and determining the latest second initial detection value parallel to the second reference direction. and a determination process of determining a second detection value having a correspondence relationship with the component of the target magnetic field. The processor executes the determination process after alternately executing the first correction process and the second correction process.

In the magnetic sensor device of the present invention, the processor may execute the first correction process and the second correction process twice each.

Moreover, in the magnetic sensor device of the present invention, the processor may execute the second correction process for the first time before executing the first correction process for the first time.

Moreover, in the magnetic sensor device of the present invention, the first correction value may be a value calculated by an operation including multiplying the latest first initial detection value by the first correction coefficient. The second correction value may be a value calculated by an operation including multiplying the latest second initial detection value by the second correction coefficient.

Further, in the magnetic sensor device of the present invention, each of the first detection circuit and the second detection circuit is connected in series in the first path that electrically connects the first node and the second node. The first magnetoresistive element and the second magnetoresistive element connected in series to the second path, which is another path for electrically connecting the first node and the second node. and a third magnetoresistive effect element and a fourth magnetoresistive effect element. The first magnetoresistive element and the fourth magnetoresistive element may be connected to the first node. The second magnetoresistive element and the third magnetoresistive element may be connected to the second node. Each of the first to fourth magnetoresistive elements includes a magnetization fixed layer having a first magnetization whose direction is fixed, a free layer having a second magnetization whose direction can be changed according to the target magnetic field, A gap layer disposed between the magnetization fixed layer and the free layer may be included. The direction of the first principal component of magnetization in the first magnetoresistance effect element and the direction of the first principal component of magnetization in the third magnetoresistance effect element may be the same direction. The direction of the first principal component of magnetization in the second magnetoresistive element may be the same as the direction of the first principal component of magnetization in the fourth magnetoresistive element. The direction of the first principal component of magnetization in the second magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the first magnetoresistive element. The direction of the first principal component of magnetization in the fourth magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the third magnetoresistive element. The direction of the second principal component of magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements is the same as when the target magnetic field is not applied to the first and second detection circuits. may be opposite to the direction of the second principal component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements. The gap layer may be a tunnel barrier layer.

Further, in the magnetic sensor device of the present invention, each of the first detection circuit and the second detection circuit may not be provided with a shield.

Moreover, in the magnetic sensor device of the present invention, both the first reference direction and the second reference direction may be parallel to the reference plane and orthogonal to each other.

Further, in the magnetic sensor device of the present invention, the direction of the target magnetic field component detected by the first detection circuit may be parallel to the reference plane. The direction of the target magnetic field component detected by the second detection circuit may be tilted with respect to the reference plane.

Further, the magnetic sensor device of the present invention further includes a third detection circuit, and the third detection circuit is tilted with respect to the reference plane and is aligned with the direction of the component of the target magnetic field detected by the second detection circuit. may be configured to detect components of the magnetic field of interest in different directions to produce a third detection signal. The second generation process may be a process of generating a second initial detection value and a third initial detection value using the second detection signal and the third detection signal. The second correction process corrects the second initial detection value and the third initial detection value using the first correction value, and updates the second initial detection value and the third initial detection value. may be The determining process may further determine the latest third initial detected value as the third detected value having a corresponding relationship with the component of the target magnetic field perpendicular to the reference plane.

When the magnetic sensor device of the present invention includes the third detection circuit, the second generation processing includes the first processing of generating the first value using the second detection signal, and the third detection circuit. A second process that uses the signal to generate a second value and a third process that uses the first value and the second value to generate a second initial detection value and a third initial detection value. and may include The second correction process may substantially include the third process. In this case, the processor may execute the first second correction process and the first first correction process in this order after executing the first process and the second process. Further, the second correction processing includes: a fourth processing of correcting the first value and the second value using the first correction value; a fifth process of generating a second initial detection value and a third initial detection value using the value of 2, and the second initial detection value and the third initial detection value generated by the fifth process A sixth process of updating the second initial detection value and the third initial detection value using .

When the magnetic sensor device of the present invention includes the third detection circuit, each of the first to third detection circuits is a path electrically connecting the first node and the second node. A second path that electrically connects the first magnetoresistive element and the second magnetoresistive element connected in series in one path and the first node and the second node The path may include a third magnetoresistive element and a fourth magnetoresistive element connected in series. The first magnetoresistive element and the fourth magnetoresistive element may be connected to the first node. The second magnetoresistive element and the third magnetoresistive element may be connected to the second node. Each of the first to fourth magnetoresistive elements includes a magnetization fixed layer having a first magnetization whose direction is fixed, a free layer having a second magnetization whose direction can be changed according to the target magnetic field, A gap layer disposed between the magnetization fixed layer and the free layer may be included. The direction of the first principal component of magnetization in the first magnetoresistance effect element and the direction of the first principal component of magnetization in the third magnetoresistance effect element may be the same direction. The direction of the first principal component of magnetization in the second magnetoresistive element may be the same as the direction of the first principal component of magnetization in the fourth magnetoresistive element. The direction of the first principal component of magnetization in the second magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the first magnetoresistive element. The direction of the first principal component of magnetization in the fourth magnetoresistive element may be opposite to the direction of the first principal component of magnetization in the third magnetoresistive element. The direction of the second principal component of magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements is the same as when the target magnetic field is not applied to the first to third detection circuits. may be opposite to the direction of the second principal component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements. The gap layer may be a tunnel barrier layer.

Further, when the magnetic sensor device of the present invention includes a third detection circuit, each of the first to third detection circuits may not be provided with a shield.

Further, when the magnetic sensor device of the present invention includes a third detection circuit, the magnetic sensor device of the present invention further includes a first chip including the first detection circuit, a second detection circuit and a third detection circuit. and a second chip containing three detection circuits.

Further, the magnetic sensor device of the present invention further includes a third detection circuit, and the third detection circuit detects a component of the target magnetic field perpendicular to the reference plane to generate a third detection signal. may be configured to The direction of the target magnetic field component detected by the first detection circuit may be a first direction parallel to the reference plane. The direction of the target magnetic field component detected by the second detection circuit may be a second direction parallel to the reference plane. The second generation process may be a process of generating a second initial detection value and a third detection value using the second detection signal and the third detection signal. The third detected value may have a correspondence relationship with the component of the target magnetic field perpendicular to the reference plane.

REFERENCE SIGNS LIST 1 magnetic sensor 2 first chip 3 second chip 4 support 6, 7 adhesive 10 first detection circuit 20 second detection circuit 30 second 3 detection circuit 40 processor 50 MR element 50A first MR element 50B second MR element 50C third MR element 51 antiferromagnetic layer 52 magnetization fixed layer , 53... gap layer, 54... free layer, 61, 61A, 61B, 61C... lower electrode, 62, 62A, 62B, 62C... upper electrode, 70... first coil, 71... lower coil element, 72... upper coil Elements 80 Second coil 81 Lower coil element 82 Upper coil element 100 Magnetic sensor device 201, 301 Substrate 201a, 301a Upper surface 202 to 204, 207 to 210, 302 to 305 , 307 to 310... insulating layer 305a... first inclined surface 305b... second inclined surface 305c... convex surface S11, S12... first detection signal S21, S22... second detection signal S31, S32... third detection signal, Su... first detection value, Suc... first correction value, Sup... first initial detection value, Sv... second detection value, Svc... second correction value, Svp ... second initial detection value, Sz ... third detection value, Szp ... third initial detection value.

Claims (17)

a first detection circuit configured to detect a unidirectional component of a target magnetic field, which is the magnetic field to be detected, to generate a first detection signal;
a second detection circuit configured to detect another unidirectional component of the target magnetic field to generate a second detection signal;
a processor;
The processor
a first generation process for generating a first initial detection value using the first detection signal;
a second generation process for generating a second initial detection value using the second detection signal;
a first correction process of correcting the first initial detection value using a second correction value generated from the latest second initial detection value to update the first initial detection value;
a second correction process of correcting the second initial detection value using a first correction value generated from the latest first initial detection value to update the second initial detection value;
Determining the latest first initial detection value as a first detection value having a correspondence relationship with the component of the target magnetic field parallel to the first reference direction, and determining the latest second initial detection value, a determination process for determining as a second detection value having a correspondence relationship with the component of the target magnetic field parallel to the second reference direction;
is configured to run
The magnetic sensor device, wherein the processor executes the determination process after alternately executing the first correction process and the second correction process. 2. The magnetic sensor device according to claim 1, wherein said processor executes each of said first correction process and said second correction process twice. 2. The magnetic sensor device according to claim 1, wherein the processor executes the second correction process for the first time before executing the first correction process for the first time. The first correction value is a value calculated by an operation including multiplying the latest first initial detection value by a first correction coefficient,
4. The second correction value according to any one of claims 1 to 3, wherein the second correction value is a value calculated by an operation including multiplying the latest second initial detection value by a second correction coefficient. The magnetic sensor device according to . each of the first detection circuit and the second detection circuit,
a first magnetoresistive element and a second magnetoresistive element connected in series in a first path that electrically connects the first node and the second node;
a third magnetoresistive element and a fourth magnetoresistive element connected in series on a second path, which is another path electrically connecting the first node and the second node; including
The first magnetoresistive element and the fourth magnetoresistive element are connected to the first node,
the second magnetoresistive element and the third magnetoresistive element are connected to the second node;
Each of the first to fourth magnetoresistive elements includes a magnetization fixed layer having a first magnetization whose direction is fixed and a free layer having a second magnetization whose direction can be changed according to the target magnetic field. and a gap layer disposed between the fixed magnetization layer and the free layer,
the direction of the first principal component of magnetization in the first magnetoresistive element and the direction of the first principal component of magnetization in the third magnetoresistive element are the same;
the direction of the first principal component of magnetization in the second magnetoresistance effect element and the direction of the first principal component of magnetization in the fourth magnetoresistance effect element are the same direction;
the direction of the first principal component of magnetization in the second magnetoresistive element is opposite to the direction of the first principal component of magnetization in the first magnetoresistive element;
the direction of the first principal component of magnetization in the fourth magnetoresistive element is opposite to the direction of the first principal component of magnetization in the third magnetoresistive element;
The direction of the main component of the second magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements is determined by the application of the target magnetic field to the first and second detection circuits. If not, the direction is opposite to the direction of the second main component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements. The magnetic sensor device according to claim 1, characterized by: 6. The magnetic sensor device according to claim 5, wherein said gap layer is a tunnel barrier layer. 2. The magnetic sensor device according to claim 1, wherein each of said first detection circuit and said second detection circuit is not provided with a shield. 2. The magnetic sensor device according to claim 1, wherein the first reference direction and the second reference direction are both parallel to the reference plane and orthogonal to each other. the direction of the target magnetic field component detected by the first detection circuit is parallel to a reference plane;
2. The magnetic sensor device according to claim 1, wherein the direction of the component of the target magnetic field detected by the second detection circuit is inclined with respect to the reference plane. Further comprising a third detection circuit,
The third detection circuit detects a component of the target magnetic field tilted with respect to the reference plane and in a direction different from the direction of the component of the target magnetic field detected by the second detection circuit to perform a third detection. configured to generate a signal,
The second generation process is a process of generating the second initial detection value and the third initial detection value using the second detection signal and the third detection signal,
The second correction process corrects the second initial detection value and the third initial detection value using the first correction value to obtain the second initial detection value and the third initial detection value. It is a process to update the detection value,
10. The determining process further determines the latest third initial detection value as a third detection value having a corresponding relationship with a component of the target magnetic field perpendicular to the reference plane. A magnetic sensor device as described. The second generating process includes a first process of generating a first value using the second detection signal and a second process of generating a second value using the third detection signal. and a third process of generating the second initial detection value and the third initial detection value using the first value and the second value,
The second correction process substantially includes the third process,
The processor executes the first correction process and the first correction process in this order after executing the first process and the second process. 11. The magnetic sensor device according to claim 10. The second generating process includes a first process of generating a first value using the second detection signal and a second process of generating a second value using the third detection signal. and a third process of generating the second initial detection value and the third initial detection value using the first value and the second value,
The second correction process corrects the first value and the second value using the first correction value, and updates the first value and the second value. a fifth process of generating the second initial detection value and the third initial detection value using the latest first value and the latest second value; and a sixth process of updating the second initial detection value and the third initial detection value using the second initial detection value and the third initial detection value generated by the process of 11. The magnetic sensor device according to claim 10, characterized by: Each of the first to third detection circuits,
a first magnetoresistive element and a second magnetoresistive element connected in series in a first path that electrically connects the first node and the second node;
a third magnetoresistive element and a fourth magnetoresistive element connected in series on a second path, which is another path electrically connecting the first node and the second node; including
The first magnetoresistive element and the fourth magnetoresistive element are connected to the first node,
the second magnetoresistive element and the third magnetoresistive element are connected to the second node;
Each of the first to fourth magnetoresistive elements includes a magnetization fixed layer having a first magnetization whose direction is fixed and a free layer having a second magnetization whose direction can be changed according to the target magnetic field. and a gap layer disposed between the fixed magnetization layer and the free layer,
the direction of the first principal component of magnetization in the first magnetoresistive element and the direction of the first principal component of magnetization in the third magnetoresistive element are the same;
the direction of the first principal component of magnetization in the second magnetoresistance effect element and the direction of the first principal component of magnetization in the fourth magnetoresistance effect element are the same direction;
the direction of the first principal component of magnetization in the second magnetoresistive element is opposite to the direction of the first principal component of magnetization in the first magnetoresistive element;
the direction of the first principal component of magnetization in the fourth magnetoresistive element is opposite to the direction of the first principal component of magnetization in the third magnetoresistive element;
The direction of the main component of the second magnetization in each of the two magnetoresistive elements among the first to fourth magnetoresistive elements is determined by the application of the target magnetic field to the first to third detection circuits. If not, the direction is opposite to the direction of the second main component of magnetization in each of the other two magnetoresistive elements among the first to fourth magnetoresistive elements. 13. The magnetic sensor device according to any one of claims 10 to 12, characterized by: 14. The magnetic sensor device according to claim 13, wherein the gap layer is a tunnel barrier layer. 13. The magnetic sensor device according to claim 10, wherein each of said first to third detection circuits is not provided with a shield. 13. The device according to any one of claims 10 to 12, further comprising a first chip including said first detection circuit, and a second chip including said second detection circuit and said third detection circuit. A magnetic sensor device according to any one of the above. Further comprising a third detection circuit,
the direction of the target magnetic field component detected by the first detection circuit is a first direction parallel to a reference plane;
the direction of the target magnetic field component detected by the second detection circuit is a second direction parallel to the reference plane;
the third detection circuit configured to detect a component of the magnetic field of interest perpendicular to the reference plane to generate a third detection signal;
The second generation process is a process of generating the second initial detection value and the third detection value using the second detection signal and the third detection signal,
2. The magnetic sensor device according to claim 1, wherein said third detection value has a correspondence relationship with a component of said target magnetic field perpendicular to said reference plane.

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