JP2023046271A - magnetic sensor - Google Patents

Abstract

To achieve a magnetic sensor that can achieve desired characteristics.SOLUTION: A magnetic sensor 1 comprises: a substrate 301 that has a top face 301a; an insulating layer 305 that has an inclined surface 305e; a first insulating part 311 that is formed of an MR element 50 arranged on the inclined surface 305e and an insulating material arranged on one part of the MR element 50; and a second insulating part 312 that is formed of an insulating material arranged on the other part of the MR element 50 at the head in a direction along the inclined surface 305e when seen from the first insulating part 311 and away from the top face 301a of the substrate 301.SELECTED DRAWING: Figure 8

Description

The present invention relates to a magnetic sensor having a magnetoresistive element arranged on an inclined surface.

2. Description of the Related Art In recent years, magnetic sensors using magnetoresistive elements have been used in various applications. In a system including a magnetic sensor, it is sometimes desired to detect a magnetic field including a component in a direction perpendicular to the plane of the substrate by using a magnetoresistive element provided on the substrate. In this case, a soft magnetic body is provided for converting a magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or a magnetoresistive element is arranged on an inclined surface formed on the substrate. By doing so, it is possible to detect a magnetic field including a component in the direction perpendicular to the plane of the substrate.

As the magnetoresistive element, for example, a spin-valve magnetoresistive element is used. A spin-valve magnetoresistance effect element includes a magnetization fixed layer having magnetization whose direction is fixed, a free layer having magnetization whose direction can be changed according to the direction of the applied magnetic field, and a magnetization layer between the magnetization fixed layer and the free layer. and a gap layer disposed in the

Patent Document 1 discloses a magnetic sensor having a magnetoresistive element formed on an inclined surface. Patent Literature 2 discloses a technique of forming two protective films made of different materials on the side surface of a magnetoresistive element to reduce the stress that the magnetoresistive element receives.

JP 2006-194733 A Japanese Patent Application Laid-Open No. 2008-141210

In general, when a magnetoresistive element is formed on an inclined surface as in the magnetic sensor disclosed in Patent Document 1, the side surface of the magnetoresistive element is tapered. Here, when a spin-valve magnetoresistive element is used as the magnetoresistive element, as in the technique disclosed in Patent Document 2, an insulating layer formed around the magnetoresistive element is used to generate a magnetic field. Consider the case of controlling the characteristics of a resistance effect element. The first layer closer to the inclined surface and the second layer farther from the inclined surface have different areas. Therefore, the first layer and the second layer are also affected differently by the insulating layer. As a result, the characteristics of the magnetoresistive effect element sometimes differ from those intended.

SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and an object of the present invention is to provide a magnetic sensor having a magnetoresistive effect element arranged on an inclined surface and capable of realizing desired characteristics. to provide.

A magnetic sensor of the present invention comprises a substrate having a reference plane, a support member arranged on the substrate and having at least one inclined surface inclined with respect to the reference plane, and arranged on the at least one inclined surface at least one magnetic sensing element; a first insulating portion made of an insulating material disposed on a portion of the at least one magnetic sensing element; a second insulating portion made of an insulating material disposed on another portion of the at least one magnetic sensing element in a direction that is the direction and away from the reference plane.

In the magnetic sensor of the present invention, the first insulating portion is arranged on part of the magnetic detecting element arranged on the inclined surface, and the second insulating portion is arranged on the other part of the magnetic detecting element. are placed. Thus, according to the present invention, it is possible to achieve desired characteristics in a magnetic sensor having a magnetoresistive element arranged on an inclined surface.

1 is a perspective view showing a magnetic sensor according to a first embodiment of the invention; FIG. 1 is a functional block diagram showing the configuration of a magnetic sensor device including a magnetic sensor according to a first embodiment of the invention; FIG. 1 is a circuit diagram showing a circuit configuration of a first detection circuit according to a first embodiment of the invention; FIG. 4 is a circuit diagram showing the circuit configuration of a second detection circuit according to the first embodiment of the present invention; FIG. 1 is a plan view showing part of a magnetic sensor according to a first embodiment of the invention; FIG. 1 is a sectional view showing part of a magnetic sensor according to a first embodiment of the invention; FIG. 1 is a side view showing a magnetoresistive element according to a first embodiment of the invention; FIG. FIG. 4 is a cross-sectional view showing first and second insulating portions of a first example in the first embodiment of the present invention; FIG. 5 is a cross-sectional view showing first and second insulating portions of a second example in the first embodiment of the present invention; FIG. 11 is a cross-sectional view showing first and second insulating portions of a third example in the first embodiment of the present invention; FIG. 10 is a cross-sectional view showing first and second insulating portions of a fourth example in the first embodiment of the present invention; 1 is a sectional view showing part of a magnetic sensor according to a first embodiment of the invention; FIG.

[First embodiment]
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. FIG. 1 is a perspective view showing a magnetic sensor according to this embodiment. FIG. 2 is a functional block diagram showing the configuration of the magnetic sensor device including the magnetic sensor according to this embodiment.

As shown in FIG. 1, the magnetic sensor 1 has the form of a rectangular parallelepiped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface positioned opposite to each other, and four side surfaces connecting the upper surface 1a and the lower surface. The magnetic sensor 1 also has a plurality of electrode pads provided on the upper surface 1a.

Here, the reference coordinate system in this embodiment will be described with reference to FIG. The reference coordinate system is a coordinate system based on the magnetic sensor 1 and is an orthogonal coordinate system defined by three axes. The reference coordinate system defines X, Y, and Z directions. The X direction, Y direction, and Z direction are orthogonal to each other. Particularly in the present embodiment, the direction perpendicular to the upper surface 1a of the magnetic sensor 1 and extending from the lower surface to the upper surface 1a of the magnetic sensor 1 is defined as the Z direction. The direction opposite to the X direction is -X direction, the direction opposite to Y direction is -Y direction, and the direction opposite to Z direction is -Z direction. The three axes that define the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

Hereinafter, a position ahead of the reference position in the Z direction will be referred to as "upper", and a position on the opposite side of the reference position as "upper" will be referred to as "lower". In addition, with respect to the constituent elements of the magnetic sensor 1, the surface located at the end in the Z direction is called the "upper surface", and the surface located at the end in the -Z direction is called the "lower surface". Also, the expression "when viewed from the Z direction" means viewing an object from a position distant in the Z direction.

As shown in FIG. 2, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. As shown in FIG. Each of the first and second detection circuits 20, 30 includes a plurality of magnetic sensing elements and is configured to detect a target magnetic field and generate at least one detection signal. Especially in this embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive elements. The magnetoresistive element is hereinafter referred to as an MR element.

A plurality of detection signals generated by the first and second detection circuits 20 , 30 are processed by the processor 40 . The magnetic sensor 1 and processor 40 constitute a magnetic sensor device 100 . The processor 40 processes a plurality of detection signals generated by the first and second detection circuits 20 and 30 to obtain a first detection signal having a correspondence relationship with components of the magnetic field in two different directions at a predetermined reference position. It is configured to generate a sensed value and a second sensed value. Particularly in the present embodiment, the two directions different from each other are one direction parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured by, for example, an application specific integrated circuit (ASIC).

The processor 40 may for example be included in a support that supports the magnetic sensor 1 . This support has a plurality of electrode pads. The first and second detection circuits 20 and 30 and the processor 40 are connected via, for example, multiple electrode pads of the magnetic sensor 1, multiple electrode pads of the support, and multiple bonding wires. When a plurality of electrode pads of the magnetic sensor 1 are provided on the upper surface 1a of the magnetic sensor 1, the magnetic sensor 1 is mounted on the upper surface of the support with the lower surface of the magnetic sensor 1 facing the upper surface of the support. may have been

Next, the first and second detection circuits 20, 30 will be described with reference to FIGS. 3 to 6. FIG. FIG. 3 is a circuit diagram showing the circuit configuration of the first detection circuit 20. As shown in FIG. FIG. 4 is a circuit diagram showing the circuit configuration of the second detection circuit 30. As shown in FIG. FIG. 5 is a plan view showing part of the magnetic sensor 1. FIG. FIG. 6 is a sectional view showing part of the magnetic sensor 1. As shown in FIG.

Here, as shown in FIG. 5, the U direction and the V direction are defined as follows. The U direction is a direction rotated from the X direction toward the -Y direction. The V direction is the direction rotated from the Y direction toward the X direction. Particularly in this embodiment, the U direction is the direction rotated from the X direction to the -Y direction by α, and the V direction is the direction rotated from the Y direction to the X direction by α. Note that α is an angle larger than 0° and smaller than 90°. In one example, α is 45°. The direction opposite to the U direction is the -U direction, and the direction opposite to the V direction is the -V direction.

Also, as shown in FIG. 6, the W1 direction and the W2 direction are defined as follows. The W1 direction is a direction rotated from the V direction toward the -Z direction. The W2 direction is a direction rotated from the V direction toward the Z direction. Especially in this embodiment, the W1 direction is the direction rotated from the V direction toward the −Z direction by β, and the W2 direction is the direction rotated from the V direction toward the Z direction by β. β is an angle larger than 0° and smaller than 90°. The direction opposite to the W1 direction is the -W1 direction, and the direction opposite to the W2 direction is the -W2 direction. The W1 direction and W2 direction are each orthogonal to the U direction.

The first detection circuit 20 is configured to detect a component of the target magnetic field in a direction parallel to the W1 direction and to generate at least one first detection signal having a corresponding relationship with this component. The second detection circuit 30 is configured to detect a component of the target magnetic field in a direction parallel to the W2 direction and to generate at least one second detection signal having a corresponding relationship with this component.

As shown in FIG. 3, the first detection circuit 20 includes a power terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, It includes a third resistance portion R23 and a fourth resistance portion R24. A plurality of MR elements of the first detection circuit 20 constitute first to fourth resistance sections R21, R22, R23 and R24.

The first resistance portion R21 is provided between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is provided between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is provided between the signal output terminal E22 and the ground terminal G2. The fourth resistance portion R24 is provided between the power supply terminal V2 and the signal output terminal E22.

As shown in FIG. 4, the second detection circuit 30 includes a power terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, It includes a third resistance portion R33 and a fourth resistance portion R34. A plurality of MR elements of the second detection circuit 30 constitute first to fourth resistance sections R31, R32, R33 and R34.

The first resistance portion R31 is provided between the power supply terminal V3 and the signal output terminal E31. The second resistance portion R32 is provided between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is provided between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is provided between the power supply terminal V3 and the signal output terminal E32.

A predetermined amount of voltage or current is applied to each of the power supply terminals V2 and V3. Each of the ground ends G2, G3 is connected to the ground.

Hereinafter, the plurality of MR elements of the first detection circuit 20 will be referred to as the plurality of first MR elements 50B, and the plurality of the MR elements of the second detection circuit 30 will be referred to as the plurality of second MR elements 50C. Since the first and second detection circuits 20 and 30 are components of the magnetic sensor 1, it can be said that the magnetic sensor 1 includes a plurality of first MR elements 50B and a plurality of second MR elements 50C. . Also, an arbitrary MR element is denoted by reference numeral 50. FIG.

FIG. 7 is a side view showing the MR element 50. FIG. The MR element 50 is a spin-valve MR element including a plurality of magnetic layers. The MR element 50 includes a magnetization fixed layer 51 having magnetization whose direction is fixed, a free layer 53 having magnetization whose direction can be changed according to the direction of the target magnetic field, and between the magnetization fixed layer 51 and the free layer 53. and a gap layer 52 disposed thereon. The MR element 50 may be a TMR (tunnel magnetoresistive effect) element or a GMR (giant magnetoresistive effect) element. In the TMR element, gap layer 52 is a tunnel barrier layer. In a GMR element, gap layer 52 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the magnetization direction of the free layer 53 with respect to the magnetization direction of the magnetization fixed layer 51. When this angle is 0°, the resistance value becomes the minimum value. The resistance reaches its maximum value when the angle is 180°. In each MR element 50 , the free layer 53 has shape anisotropy such that the direction of the axis of easy magnetization is perpendicular to the direction of magnetization of the fixed magnetization layer 51 . A magnet that applies a bias magnetic field to the free layer 53 can also be used as means for setting the axis of easy magnetization in a predetermined direction in the free layer 53 . The magnetization fixed layer 51, the gap layer 52 and the free layer 53 are laminated in this order.

The MR element 50 may further include an antiferromagnetic layer located on the opposite side of the magnetization fixed layer 51 from the gap layer 52 . The antiferromagnetic layer is made of an antiferromagnetic material and causes exchange coupling with the magnetization fixed layer 51 to fix the magnetization direction of the magnetization fixed layer 51 . Alternatively, the magnetization pinned layer 51 may be a so-called self-pinned pinned layer (synthetic ferri pinned layer, SFP layer). A self-pinned fixed layer has a laminated ferrimagnetic structure in which a ferromagnetic layer, a nonmagnetic intermediate layer, and a ferromagnetic layer are laminated, and the two ferromagnetic layers are antiferromagnetically coupled.

Note that the arrangement of the layers 51 to 53 in the MR element 50 may be upside down from the arrangement shown in FIG.

In FIGS. 3 and 4, filled arrows represent the magnetization direction of the magnetization pinned layer 51 of the MR element 50 . The white arrow indicates the magnetization direction of the free layer 53 of the MR element 50 when no symmetrical magnetic field is applied to the MR element 50 .

In the example shown in FIG. 3, the magnetization direction of the magnetization pinned layer 51 in each of the first and third resistance sections R21 and R23 is the W1 direction. The magnetization direction of the magnetization pinned layer 51 in each of the second and fourth resistance portions R22 and R24 is the -W1 direction. Also, the free layer 53 of each of the plurality of first MR elements 50B has shape anisotropy such that the direction of easy axis of magnetization is parallel to the U direction. The direction of magnetization of the free layer 53 in each of the first and second resistance sections R21 and R22 is the U direction when no target magnetic field is applied to the first MR element 50B. The magnetization direction of the free layer 53 in each of the third and fourth resistance sections R23 and R24 is the -U direction in the above case.

In the example shown in FIG. 4, the magnetization direction of the magnetization pinned layer 51 in each of the first and third resistance sections R31 and R33 is the W2 direction. The magnetization direction of the magnetization pinned layer 51 in each of the second and fourth resistance portions R32 and R34 is the -W2 direction. Also, the free layer 53 of each of the plurality of second MR elements 50C has shape anisotropy such that the direction of easy magnetization is parallel to the U direction. The direction of magnetization of the free layer 53 in each of the first and second resistance sections R31 and R32 is the U direction when no target magnetic field is applied to the second MR element 50C. The magnetization direction of the free layer 53 in each of the third and fourth resistance sections R33 and R34 is the -U direction in the above case.

The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to the free layers 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. I'm in. In this embodiment, the magnetic field generator includes coils 80 that apply magnetic fields in predetermined directions to the free layers 53 of the plurality of first MR elements 50B and the plurality of second MR elements 50C. there is

Note that the direction of magnetization of the magnetization fixed layer 51 and the direction of the axis of easy magnetization of the free layer 53 may be slightly deviated from the above directions from the viewpoint of the accuracy of fabrication of the MR element 50 and the like. Moreover, the magnetization of the magnetization fixed layer 51 may be configured to include a magnetization component whose main component is the direction described above. In this case, the magnetization direction of the magnetization fixed layer 51 is the above-described direction or substantially the above-described direction.

In the present embodiment, the MR element 50 is configured such that a current flows in the stacking direction of a plurality of magnetic layers, that is, the magnetization fixed layer 51 and the free layer 53 . As will be described later, the magnetic sensor 1 has a lower electrode and an upper electrode for applying current to the MR element 50 . The MR element 50 is arranged between the lower electrode and the upper electrode.

A specific structure of the magnetic sensor 1 will be described in detail below with reference to FIGS. 5 and 6. FIG. FIG. 6 shows a portion of the cross section at the position indicated by line 6-6 in FIG.

The magnetic sensor 1 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, 308, 309, and 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, and a plurality of It includes an upper electrode 62 B, a plurality of upper electrodes 62 C, a plurality of lower coil elements 81 and a plurality of upper coil elements 82 . It is assumed that the upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also one direction perpendicular to the top surface 301 a of the substrate 301 . Note that the coil element is a part of the winding of the coil.

An insulating layer 302 is disposed over the substrate 301 . A plurality of lower coil elements 81 are arranged on the insulating layer 302 . The insulating layer 303 is arranged around the plurality of lower coil elements 81 on the insulating layer 302 . Insulating layers 304 and 305 are laminated in this order on the plurality of lower coil elements 81 and insulating layer 303 .

A plurality of lower electrodes 61 B and a plurality of lower electrodes 61 C are arranged on the insulating layer 305 . The plurality of first MR elements 50B are arranged on the plurality of lower electrodes 61B. A plurality of second MR elements 50C are arranged on a plurality of lower electrodes 61C. The insulating layer 306 is arranged around the plurality of first MR elements 50B and around the plurality of second MR elements 50C on the plurality of lower electrodes 61B and the plurality of lower electrodes 61C. The insulating layer 307 is arranged on the insulating layer 305 around the plurality of lower electrodes 61B, around the plurality of lower electrodes 61C, and around the insulating layer 306 .

The insulating layer 308 is disposed on a portion of each of the plurality of first MR elements 50B, on a portion of each of the plurality of second MR elements 50C, and on the insulating layers 306 and 307. . A plurality of upper electrodes 62B are arranged on another portion of each of the plurality of first MR elements 50B and on a portion of the insulating layer 308 . A plurality of upper electrodes 62C are arranged on a portion of each of the plurality of second MR elements 50C and on a portion of the insulating layer 308 . The insulating layer 309 is arranged on another portion of the insulating layer 308 around the plurality of upper electrodes 62B and around the plurality of upper electrodes 62C.

The insulating layer 310 is arranged on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C and the insulating layer 309. As shown in FIG. A plurality of upper coil elements 82 are disposed on insulating layer 310 . The magnetic sensor 1 may further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310 .

The magnetic sensor 1 includes a support member that supports the plurality of first MR elements 50B and the plurality of second MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301 a of the substrate 301 . Especially in this embodiment, the support member is constituted by the insulating layer 305 . 5 shows the insulating layer 305, the plurality of first MR elements 50B, the plurality of second MR elements 50C, and the plurality of upper coil elements 82 among the constituent elements of the magnetic sensor 1. FIG.

The insulating layer 305 has a plurality of convex surfaces 305c projecting in a direction away from the upper surface 301a of the substrate 301 (Z direction). Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surface 305c is a semi-cylindrical curved surface formed by moving the curved shape (arch shape) of the convex surface 305c shown in FIG. 6 along the direction parallel to the U direction. Also, the plurality of convex surfaces 305c are arranged in a direction parallel to the V direction at predetermined intervals.

Each of the plurality of convex surfaces 305c has an upper end farthest from the upper surface 301a of the substrate 301. As shown in FIG. In this embodiment, the upper end of each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. Here, attention is paid to an arbitrary one convex surface 305c among the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface of the convex surface 305c on the V direction side of the upper end portion of the convex surface 305c. The second inclined surface 305b is a surface of the convex surface 305c on the −V direction side of the upper end portion of the convex surface 305c. In FIG. 5, the boundary between the first inclined surface 305a and the second inclined surface 305b is indicated by a dotted line.

The upper end of the convex surface 305c may be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, the dotted line shown in FIG. 5 indicates the upper end of the convex surface 305c.

A top surface 301a of the substrate 301 is parallel to the XY plane. Each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b becomes smaller as the distance from the upper surface 301a of the substrate 301 increases.

In this embodiment, since there are a plurality of convex surfaces 305c, there are a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b. The insulating layer 305 has a plurality of first slanted surfaces 305a and a plurality of second slanted surfaces 305b.

The insulating layer 305 further has a flat surface 305d surrounding the plurality of convex surfaces 305c. The flat surface 305 d is a surface parallel to the upper surface 301 a of the substrate 301 . Each of the plurality of convex surfaces 305c protrudes in the Z direction from the flat surface 305d. Moreover, in the present embodiment, the plurality of convex surfaces 305c are arranged at predetermined intervals. Therefore, a flat surface 305d exists between two convex surfaces 305c adjacent in the V direction.

The insulating layer 305 includes a plurality of protrusions each protruding in the Z direction and a flat portion present around the plurality of protrusions. Each of the multiple protrusions extends in a direction parallel to the U direction and has a convex surface 305c. Also, the plurality of protrusions are arranged in a direction parallel to the V direction at predetermined intervals. The thickness of the flat portion (dimension in the Z direction) is substantially constant. The insulating layer 304 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 305 .

The plurality of lower electrodes 61B are arranged on the plurality of first inclined surfaces 305a. The plurality of lower electrodes 61C are arranged on the plurality of second inclined surfaces 305b. As described above, each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, that is, the XY plane. The upper surface of each of the plurality of lower electrodes 61C is also inclined with respect to the XY plane. Therefore, it can be said that the plurality of first MR elements 50B and the plurality of second MR elements 50C are arranged on an inclined plane with respect to the XY plane. The insulating layer 305 is a member for supporting each of the plurality of first MR elements 50B and the plurality of second MR elements 50C so as to be tilted with respect to the XY plane.

Note that, in the present embodiment, the first inclined surface 305a is a curved surface. Therefore, the first MR element 50B curves along the curved surface (first inclined surface 305a). In this embodiment, for convenience, the magnetization direction of the magnetization pinned layer 51 of the first MR element 50B is defined as a linear direction as described above. In the W1 direction and the -W1 direction, which are the magnetization directions of the magnetization fixed layer 51 of the first MR element 50B, the tangent line extending in contact with the portion of the first inclined surface 305a near the first MR element 50B extends. It is also the direction to

Similarly, in this embodiment, the second inclined surface 305b is a curved surface. Therefore, the second MR element 50C curves along the curved surface (second inclined surface 305b). In this embodiment, for convenience, the magnetization direction of the magnetization pinned layer 51 of the second MR element 50C is defined as a linear direction as described above. In the W2 direction and the -W2 direction, which are the magnetization directions of the magnetization fixed layer 51 of the second MR element 50C, the tangent line extending in contact with the portion of the second inclined surface 305b near the second MR element 50C extends. It is also the direction to

As shown in FIG. 5, the plurality of first MR elements 50B are arranged in parallel in the U direction and the V direction. A plurality of first MR elements 50B are arranged in a row on one first inclined surface 305a. Similarly, the plurality of second MR elements 50C are arranged so as to line up in the U direction and the V direction, respectively. A plurality of second MR elements 50C are arranged in a row on one second inclined surface 305b. In this embodiment, rows of the plurality of first MR elements 50B and rows of the plurality of second MR elements 50C are alternately arranged in the direction parallel to the V direction.

Note that the adjacent one first MR element 50B and one second MR element 50C may or may not be displaced in a direction parallel to the U direction when viewed from the Z direction. good. Two first MR elements 50B adjacent to each other with one second MR element 50C sandwiched therebetween may or may not be shifted in a direction parallel to the U direction when viewed from the Z direction. may Two second MR elements 50C adjacent to each other with one first MR element 50B interposed therebetween may or may not be shifted in the direction parallel to the U direction when viewed from the Z direction. may

A plurality of first MR elements 50B are connected in series by a plurality of lower electrodes 61B and a plurality of upper electrodes 62B. Here, a method of connecting the plurality of first MR elements 50B will be described in detail with reference to FIG. In FIG. 7, reference numeral 61 denotes a lower electrode corresponding to an arbitrary MR element 50, and reference numeral 62 denotes an upper electrode corresponding to an arbitrary MR element 50. FIG. As shown in FIG. 7, each lower electrode 61 has an elongated shape. A gap is formed between two lower electrodes 61 adjacent in the longitudinal direction of the lower electrodes 61 . On the upper surface of the lower electrode 61, the MR elements 50 are arranged near both ends in the longitudinal direction. Each upper electrode 62 has an elongated shape, and is arranged on two lower electrodes 61 adjacent in the longitudinal direction of the lower electrode 61 to electrically connect two adjacent MR elements 50 to each other.

Although not shown, one MR element 50 positioned at the end of a row of a plurality of MR elements 50 is adjacent to a plurality of other MR elements 50 in a direction crossing the longitudinal direction of the lower electrode 61. , is connected to another MR element 50 located at the end of the column. These two MR elements 50 are connected to each other by electrodes (not shown). The electrodes (not shown) may be electrodes that connect the bottom surfaces or the top surfaces of the two MR elements 50 .

When the MR element 50 shown in FIG. 7 is the first MR element 50B, the lower electrode 61 shown in FIG. 7 corresponds to the lower electrode 61B and the upper electrode 62 shown in FIG. 7 corresponds to the upper electrode 62B. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

Similarly, a plurality of second MR elements 50C are connected in series by a plurality of lower electrodes 61C and a plurality of upper electrodes 62C. The above description of the connection method for the plurality of first MR elements 50B also applies to the connection method for the plurality of second MR elements 50C. When the MR element 50 shown in FIG. 7 is the second MR element 50C, the lower electrode 61 shown in FIG. 7 corresponds to the lower electrode 61C, and the upper electrode 62 shown in FIG. 7 corresponds to the upper electrode 62C. . In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Also, the plurality of upper coil elements 82 are arranged so as to line up in the X direction. Particularly in this embodiment, when viewed from the Z direction, two upper coil elements 82 overlap each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

Each of the plurality of lower coil elements 81 extends in a direction parallel to the Y direction. Also, the plurality of lower coil elements 81 are arranged so as to line up in the X direction. The shape and arrangement of the plurality of lower coil elements 81 may be the same as or different from the shape and arrangement of the plurality of upper coil elements 82 . In the example shown in FIGS. 5 and 6 , the X-direction dimension of each of the plurality of lower coil elements 81 is smaller than the X-direction dimension of each of the plurality of upper coil elements 82 . Also, the interval between two lower coil elements 81 adjacent in the X direction is smaller than the interval between two upper coil elements 82 adjacent in the X direction.

5 and 6, the plurality of lower coil elements 81 and the plurality of upper coil elements 82 are arranged on the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. On the other hand, they are electrically connected to form a coil 80 that applies a magnetic field parallel to the X direction. Also, the coil 80 is connected to the free layer 53 in the first and second resistance units R21 and R22 of the first detection circuit 20 and the first and second resistance units R31 and R32 of the second detection circuit 30, for example. A magnetic field in the X direction is applied to the free layers in the third and fourth resistors R23 and R24 of the first detection circuit 20 and the third and fourth resistors R33 and R34 of the second detection circuit 30. It may be configured so that a magnetic field in the −X direction can be applied to 53 . Coil 80 may also be controlled by processor 40 .

Next, the first and second detection signals will be explained. First, the first detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the W1 direction changes, the resistance values of the resistors R21 to R24 of the first detection circuit 20 increase and the resistances of the resistors R21 and R23 increase. The resistance values of R22 and R24 decrease, or the resistance values of resistors R21 and R23 decrease and the resistance values of resistors R22 and R24 increase. This changes the potential of each of the signal output terminals E21 and E22. The first detection circuit 20 generates a signal corresponding to the potential of the signal output terminal E21 as the first detection signal S21, and generates a signal corresponding to the potential of the signal output terminal E22 as the first detection signal S22. is configured to

Next, the second detection signal will be described with reference to FIG. When the intensity of the component of the target magnetic field in the direction parallel to the W2 direction changes, the resistance values of the resistance portions R31 to R34 of the second detection circuit 30 increase and the resistance values of the resistance portions R31 and R33 increase. The resistance values of R32 and R34 decrease, or the resistance values of resistors R31 and R33 decrease and the resistance values of resistors R32 and R34 increase. This changes the potential of each of the signal output terminals E31 and E32. The second detection circuit 30 generates a signal corresponding to the potential of the signal output terminal E31 as the second detection signal S31, and generates a signal corresponding to the potential of the signal output terminal E32 as the second detection signal S32. is configured to

Next, the operation of processor 40 will be described. The processor 40 is configured to generate a first sensed value and a second sensed value based on the first sensed signals S21, S22 and the second sensed signals S31, S32. The first detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The second detection value is a detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the first detected value is denoted by symbol Sv, and the second detected value is denoted by symbol Sz.

Processor 40, for example, generates first and second detection values Sv and Sz as follows. The processor 40 first generates the value S1 by an operation including determining the difference S21-S22 between the first detection signal S21 and the first detection signal S22, and the second detection signal S31 and the second detection signal S31. An operation involving taking the difference S31-S32 of the signal S32 produces the value S2. Next, processor 40 calculates values S3 and S4 using the following equations (1) and (2).

S3=(S2+S1)/(2cosα) (1)
S4=(S2-S1)/(2sinα) (2)

The first detection value Sv may be the value S3 itself, or may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment are added. Similarly, the second detection value Sz may be the value S4 itself, or may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment are added.

Next, structural features of the magnetic sensor 1 according to this embodiment will be described. First, the first example will be explained. FIG. 8 is a cross-sectional view showing the first and second insulating parts of the first example.

FIG. 8 shows a section that intersects the MR element 50 placed on an arbitrary inclined surface 305e and that is parallel to the VZ plane. A section parallel to the VZ plane is hereinafter referred to as a VZ section. The VZ cross section shown in FIG. 8 may be a VZ cross section of the MR element 50 viewed from a position ahead in the U direction, similarly to FIG. In this case, the MR element 50, the lower electrode 61 and the inclined surface 305e respectively correspond to the first MR element 50B, the lower electrode 61B and the first inclined surface 305a. Alternatively, the VZ cross section shown in FIG. 8 may be a VZ cross section of the MR element 50 viewed from a position ahead in the -U direction. In this case, the MR element 50, the lower electrode 61 and the inclined surface 305e respectively correspond to the second MR element 50C, the lower electrode 61C and the second inclined surface 305b.

Here, as shown in FIGS. 8 and 9, a first direction D1 and a second direction D2 parallel to the VZ plane are defined. The first direction D1 is the direction along the inclined surface 305e and the direction away from the reference plane. In this embodiment, the upper surface 301a (see FIG. 6) of the substrate 301 is used as a reference plane. The Z direction is one direction perpendicular to the reference plane (upper surface 301a of substrate 301). The second direction D2 is a direction along the inclined surface 305e and a direction approaching the reference plane (upper surface 301a of the substrate 301).

Further, in the following description, a direction along the inclined surface 305e and parallel to the first direction D1 (a direction parallel to the second direction D2) is simply referred to as a direction along the inclined surface 305e. This direction is the direction along the inclined surface 305e and also the direction in which the distance from the reference plane (upper surface 301a of the substrate 301) changes.

The MR element 50 has a lower surface 50a facing the inclined surface 305e, an upper surface 50b opposite to the lower surface 50a, a first side surface 50c, and a second side surface 50d. The first side surface 50c connects the end of the lower surface 50a in the second direction D2 and the end of the upper surface 50b in the second direction D2. 50 d of 2nd side surfaces are arrange|positioned ahead of the 1st direction D1 seeing from the 1st side surface 50c. 50 d of 2nd side surfaces connect the edge part of the 1st direction D1 of the lower surface 50a, and the edge part of the 1st direction D1 of the upper surface 50b.

The lower electrode 61 is interposed between the MR element 50 and the inclined surface 305e. The lower electrode 61 has a lower surface 61a facing the inclined surface 305e, an upper surface 61b opposite to the lower surface 61a, and two side surfaces (see FIG. 6) connecting the lower surface 61a and the upper surface 61b. Note that the lower electrode 61 may be formed from the inclined surface 305e to the flat surface 305d. In this case, one of the two side surfaces of the lower electrode 61 is arranged on the inclined surface 305e and the other is arranged on the flat surface 305d. Alternatively, the lower electrode 61 may be entirely arranged on the inclined surface 305e. In this case, the two side surfaces of the lower electrode 61 are both arranged on the inclined surface 305e.

The magnetic sensor 1 includes a first insulating portion 311 and a second insulating portion 312 . Each of the first and second insulating portions 311 and 312 may be composed of one insulating layer, or may be composed of a plurality of insulating layers. Especially in this embodiment, each of the first and second insulating portions 311 and 312 is constituted by the insulating layers 306 and 308 shown in FIG. Each of the insulating layers 306 and 308 may be composed of one insulating film, or may be composed of a plurality of insulating films.

Since each of the insulating layers 306 and 308 is made of an insulating material, each of the first and second insulating portions 311 and 312 is also made of an insulating material. As an insulating material forming each of the first and second insulating portions 311 and 312 (each of the insulating layers 306 and 308), for example, Al ₂ O ₃ or SiO ₂ is used.

The first insulating portion 311 is arranged on part of the MR element 50 . Particularly in this embodiment, the first insulating portion 311 is arranged on the first side surface 50c of the MR element 50 and part of the top surface 50b of the MR element 50 .

The second insulating portion 312 is arranged on another portion of the MR element 50 beyond the first direction D1 when viewed from the first insulating portion 311 . Particularly in this embodiment, the second insulating portion 312 is arranged on the second side surface 50 d of the MR element 50 and another portion of the top surface 50 b of the MR element 50 .

The upper electrode 62 (see FIG. 7) is arranged on the MR element 50 , the first insulating portion 311 and the second insulating portion 312 and electrically connected to the MR element 50 . A portion of each of the first and second insulating portions 311 and 312 is interposed between the MR element 50 and the upper electrode 62 . Between lower electrode 61 and upper electrode 62, another part of each of first and second insulating portions 311 and 312 is interposed.

So far, the structural features of the magnetic sensor 1 have been described by focusing on one inclined surface 305e (one first inclined surface 305a or one second inclined surface 305b). In this embodiment, there are a plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b. The above description of one inclined surface 305e also applies to each of the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b.

Here, one first inclined surface 305a and one second inclined surface 305b included in one convex surface 305c, and one first MR arranged on this one first inclined surface 305a Note the element 50B and one second MR element 50C located on this one second inclined surface 305b (see FIG. 6). The second insulating portion 312 arranged on part of the first MR element 50B and the second insulating portion 312 arranged on part of the second MR element 50C are not divided. It may be one continuous insulating portion. Particularly in this embodiment, a continuous portion of the insulating layer 308 is formed over the first inclined surface 305a and the second inclined surface 305b.

Next, two convex surfaces 305c adjacent in a direction parallel to the V direction, a first inclined surface 305a included in the convex surface 305c on the -V direction side, and a second inclined surface included in the convex surface 305c on the V direction side. 305b, one first MR element 50B arranged on this one first inclined surface 305a, and one second MR element 50B arranged on this one second inclined surface 305b. Focus on 50C (see FIG. 6). The first insulating part 311 arranged on part of the first MR element 50B and the first insulating part 311 arranged on part of the second MR element 50C are not divided. It may be one continuous insulating portion. Particularly in this embodiment, a continuous portion of the insulating layer 308 is formed over the first inclined surface 305a and the second inclined surface 305b.

Although not shown, the first insulating portion 311 and the second insulating portion 312 may also be one continuous insulating portion without being divided. Especially in this embodiment, the insulating layer 308 may be formed on the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b without being divided. Moreover, on each of the plurality of first inclined surfaces 305a, the insulating layer 306 may be formed around the first MR element 50B without being divided. Similarly, the insulating layer 306 may be formed around the second MR element 50C without being divided on each of the plurality of second inclined surfaces 305b.

Next, a second example will be described. FIG. 9 is a cross-sectional view showing first and second insulating portions 311 and 312 of the second example. In the second example, the area of the upper surface 50b of the MR element 50 covered with the first insulating portion 311 is larger than the area of the upper surface 50b of the MR element 50 covered with the second insulating portion 312. .

Next, a third example will be described. FIG. 10 is a cross-sectional view showing first and second insulating portions 311 and 312 of the third example. In the third example, the area of the upper surface 50b of the MR element 50 covered with the second insulating section 312 is larger than the area of the upper surface 50b of the MR element 50 covered with the first insulating section 311. .

Next, a fourth example will be described. FIG. 11 is a cross-sectional view showing first and second insulating portions 311 and 312 of the fourth example. In a fourth example, the second insulating portion 312 covers the second side surface 50d of the MR element 50 but does not cover the top surface 50b of the MR element 50. FIG.

Next, the operation and effects of the magnetic sensor 1 according to this embodiment will be described. In this embodiment, insulating layers 306 and 308 are arranged around the MR element 50 . Each of the first and second insulating portions 311 and 312 is composed of insulating layers 306 and 308 . It is known that an insulating portion (insulating layer) arranged around the MR element 50 affects the characteristics of the MR element 50 . In this embodiment, a first insulating portion 311 is arranged on part of the MR element 50 and a second insulating portion 312 is arranged on another part of the MR element 50 . Thus, according to this embodiment, desired characteristics can be achieved.

The sensitivity of the MR element 50 will be described below as an example of the characteristics of the MR element 50 . The free layer 53 has shape anisotropy such that the easy axis of magnetization is parallel to the U direction. When no target magnetic field is applied to the MR element 50, the magnetization direction of the free layer 53 is the U direction or the -U direction. In the MR element 50 having such a configuration, increasing the anisotropy of the free layer 53 in the direction orthogonal to the U direction makes it easier for the direction of magnetization of the free layer 53 to change. improves.

For example, the free layer 53 is composed of a magnetic layer with negative magnetostriction, and the first and second insulating portions 311 and 312 are composed of insulating layers that apply compressive stress to the free layer 53. , the anisotropy of the free layer 53 can be increased. Particularly in this embodiment, a first insulating portion 311 is arranged on part of the MR element 50 and a second insulating portion 312 is arranged on another part of the MR element 50 . Moreover, particularly in this embodiment, at least one of the first and second insulating portions 311 and 312 is arranged on the upper surface 50 b of the MR element 50 . As a result, according to the present embodiment, compared to the case where the first and second insulating portions 311 and 312 are not arranged on a part of the MR element 50, the free layer in the direction orthogonal to the U direction is reduced. The anisotropy of 53 can be increased, and the sensitivity of the MR element 50 can be improved.

By the way, the MR element 50 is formed on the inclined surface 305e. Due to limitations in the manufacturing process for forming MR element 50, each of first and second sides 50c, 50d are tapered. Therefore, the area of the free layer 53 located away from the inclined surface 305e is reduced, and the outer circumference of the free layer 53 is also shortened. If the first and second insulating portions 311 and 312 are not arranged on a portion of the MR element 50, a sufficient compressive stress may not be applied to the free layer 53. be. In contrast, in the present embodiment, the first and second insulating portions 311 and 312 are arranged on part of the MR element 50 as described above. Thus, according to the present embodiment, a sufficiently large compressive stress can be applied to the free layer 53 .

The magnitude of the compressive stress applied to the free layer 53 depends on the amount of each of the first and second insulating portions 311 and 312 running over the MR element 50, 312 can be controlled by each configuration. For example, when each of the first and second insulating parts 311 and 312 has a three-layer structure of Al ₂ O ₃ /SiO ₂ /Al ₂ O ₃ , the compressive stress can be increased by changing the thickness ratio of each layer. It is possible to adjust the depth.

Also, when the compressive stress applied to the free layer 53 increases, the hysteresis of the sensitivity of the MR element 50 may increase. As described above, it is possible to adjust the sensitivity hysteresis of the MR element 50 by controlling the magnitude of the compressive stress applied to the free layer 53 .

Heretofore, as shown in FIG. 7, the case where the free layer 53 is arranged farther from the inclined plane 305e than the magnetization fixed layer 51 is explained as an example. However, the configuration of the MR element 50 is not limited to the example shown in FIG. In this case, materials for each of the magnetization fixed layer 51, the first insulating portion 311, and the second insulating portion 312 may be selected so that the magnetization direction of the magnetization fixed layer 51 does not fluctuate more. In this case, by arranging the first and second insulating portions 311 and 312 on a portion of the MR element 50, the first and second insulating portions 311 and 312 are formed on a portion of the MR element 50. It is possible to suppress the change in the magnetization direction of the magnetization fixed layer 51 as compared with the case where it is not arranged.

[Second embodiment]
Next, a magnetic sensor 1 according to a second embodiment of the invention will be described with reference to FIG. FIG. 12 is a cross-sectional view showing part of the magnetic sensor 1 according to this embodiment.

In this embodiment, the overall shape of each of the plurality of convex surfaces 305c of the insulating layer 305 is a triangular roof shape formed by moving the triangular shape of the convex surface 305c shown in FIG. 12 along the direction parallel to the U direction. . Moreover, each of the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b of the insulating layer 305 is flat. Each of the plurality of first inclined surfaces 305a is a plane parallel to the U direction and the W1 direction. Each of the plurality of second inclined surfaces 305b is a plane parallel to the U direction and the W2 direction.

The insulating layer 305 may include a plurality of protrusions forming a plurality of convex surfaces 305c, similar to the example shown in FIG. Alternatively, the insulating layer 305 may include a plurality of grooves arranged in a direction parallel to the V direction. Each of the plurality of grooves has a first wall surface corresponding to the first inclined surface 305a and a second wall surface corresponding to the second inclined surface 305b. One convex surface 305c is composed of a first wall surface of one groove and a second wall surface of another groove adjacent to the -V direction side of this one groove.

In addition, in the example shown in FIG. 12, each of the plurality of grooves further has a bottom surface corresponding to the flat surface 305d. However, each of the plurality of grooves need not have a bottom surface.

Other configurations, actions and effects in this embodiment are the same as those in the first embodiment.

The present invention is not limited to the above embodiments, and various modifications are possible. For example, the shape of each of the first and second insulating portions 311 and 312 is not limited to the examples shown in the respective embodiments, and is arbitrary as long as the requirements of the claims are satisfied.

In addition, the magnetic sensor 1 further detects a component of the target magnetic field in one direction parallel to the XY plane, and generates at least one third detection signal having a correspondence relationship with this component. detection circuit. In this case, the processor 40 may be configured to generate a detection value corresponding to the component of the target magnetic field in the direction parallel to the U-direction based on the at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 20, 30, or may be included in a separate chip from the first and second detection circuits 20, 30. good.

As described above, the magnetic sensor of the present invention includes a substrate having a reference plane, a support member disposed on the substrate and having at least one inclined surface inclined with respect to the reference plane, and at least one inclined surface. at least one magnetic sensing element disposed on a first insulating portion made of an insulating material disposed on a portion of the at least one magnetic sensing element; and at least one when viewed from the first insulating portion a second insulating portion made of an insulating material disposed on another portion of the at least one magnetic sensing element in a direction along the two inclined planes and away from the reference plane.

The magnetic sensor of the present invention further comprises an upper electrode disposed over the at least one magnetic sensing element, the first insulating portion and the second insulating portion and electrically connected to the at least one magnetic sensing element. may be Further, the magnetic sensor of the present invention may further comprise a lower electrode interposed between the at least one magnetic detection element and the at least one inclined surface and electrically connected to the at least one magnetic detection element. good.

Further, in the magnetic sensor of the present invention, at least one magnetic detection element has a lower surface facing the inclined surface, an upper surface opposite to the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. and The first insulating portion may be arranged on at least the first side surface. A second insulating portion may be disposed on at least the second side surface. The first insulating portion may also be disposed on a portion of the top surface of the at least one magnetic sensing element. The second insulating portion may also be disposed over a portion of the top surface of the at least one magnetic sensing element. Alternatively, the second insulating portion may not be arranged on the top surface of the at least one magnetic sensing element.

Moreover, in the magnetic sensor of the present invention, the inclined surface may be a curved surface. Alternatively, the inclined surface may be flat.

Moreover, in the magnetic sensor of the present invention, the at least one inclined surface may include a first inclined surface and a second inclined surface facing in mutually different directions. The at least one magnetic sensing element may include a first magnetic sensing element arranged on the first inclined surface and a second magnetic sensing element arranged on the second inclined surface good. The support member may have a convex surface projecting in a direction away from the reference plane. The convex surface may include a first slanted surface and a second slanted surface. The second insulating section arranged on the first magnetic sensing element and the second insulating section arranged on the second magnetic sensing element may be one insulating section.

Moreover, in the magnetic sensor of the present invention, the at least one inclined surface may include a first inclined surface and a second inclined surface facing in mutually different directions. The at least one magnetic sensing element may include a first magnetic sensing element arranged on the first inclined surface and a second magnetic sensing element arranged on the second inclined surface good. The support member may each have a first convex surface and a second convex surface projecting away from the reference plane. The first convex surface may include a first slanted surface. The second convex surface may include a second slanted surface. The first insulating section arranged on the first magnetic sensing element and the first insulating section arranged on the second magnetic sensing element may be one insulating section.

In the magnetic sensor of the present invention, each of the first insulating part and the second insulating part is arranged on the first insulating layer made of an insulating material and on the first insulating layer made of an insulating material. and a second insulating layer. At least one magnetic sensing element may have a lower surface facing the inclined surface, an upper surface opposite to the lower surface, and first and second side surfaces connecting the lower surface and the upper surface. The first insulating layer may contact the first side and the second side.

Reference Signs List 1 magnetic sensor 20 first detection circuit 30 second detection circuit 40 processor 50 MR element 50B first MR element 50C second MR element 51 fixed magnetization Layer 52 Gap layer 53 Free layer 61, 61B, 61C Lower electrode 62, 62B, 62C Upper electrode 80 Coil 81 Lower coil element 82 Upper coil element 100 Magnetic sensor Apparatus 301 Substrate 301a Upper surface 302 to 305, 307 to 310 Insulating layer 305a First inclined surface 305b Second inclined surface 305c Convex surface 305d Flat surface 305e Inclined surface , 311 . . . a first insulating portion, 312 .

Claims (13)

a substrate having a reference plane;
a support member disposed on the substrate and having at least one inclined surface inclined with respect to the reference plane;
at least one magnetic sensing element disposed on the at least one inclined surface;
a first insulating portion made of an insulating material disposed on a portion of the at least one magnetic sensing element;
Insulation disposed on another portion of the at least one magnetic sensing element in a direction along the at least one inclined surface when viewed from the first insulation portion and in a direction away from the reference plane. and a second insulator made of material. and an upper electrode disposed on the at least one magnetic sensing element, the first insulating section and the second insulating section and electrically connected to the at least one magnetic sensing element. 2. The magnetic sensor of claim 1. 2. A lower electrode interposed between said at least one magnetic sensing element and said at least one inclined surface and electrically connected to said at least one magnetic sensing element. 3. or the magnetic sensor according to 2 above. The at least one magnetic detection element has a lower surface facing the inclined surface, an upper surface opposite to the lower surface, and first and second side surfaces connecting the lower surface and the upper surface. ,
The first insulating portion is disposed on at least the first side surface,
2. The magnetic sensor according to claim 1, wherein said second insulating portion is arranged on at least said second side surface. 5. The magnetic sensor of claim 4, wherein the first insulating portion is further disposed over a portion of the upper surface of the at least one magnetic sensing element. 5. The magnetic sensor of claim 4, wherein the second insulating portion is further disposed over a portion of the top surface of the at least one magnetic sensing element. 5. The magnetic sensor according to claim 4, wherein said second insulating portion is not arranged on said top surface of said at least one magnetic sensing element. 2. The magnetic sensor according to claim 1, wherein said inclined surface is a curved surface. 2. The magnetic sensor according to claim 1, wherein said inclined surface is a flat surface. the at least one inclined surface includes a first inclined surface and a second inclined surface facing in different directions;
The at least one magnetic sensing element includes a first magnetic sensing element arranged on the first inclined surface and a second magnetic sensing element arranged on the second inclined surface. ,
The support member has a convex surface projecting in a direction away from the reference plane,
The convex surface includes the first inclined surface and the second inclined surface,
The second insulating portion arranged on the first magnetic detecting element and the second insulating portion arranged on the second magnetic detecting element are one insulating portion. 2. The magnetic sensor of claim 1. the at least one inclined surface includes a first inclined surface and a second inclined surface facing in different directions;
The at least one magnetic sensing element includes a first magnetic sensing element arranged on the first inclined surface and a second magnetic sensing element arranged on the second inclined surface. ,
each of the support members has a first convex surface and a second convex surface projecting in a direction away from the reference plane;
The first convex surface includes the first inclined surface,
The second convex surface includes the second inclined surface,
The first insulating portion arranged on the first magnetic detecting element and the first insulating portion arranged on the second magnetic detecting element are one insulating portion. 2. The magnetic sensor of claim 1. Each of the first insulating portion and the second insulating portion includes a first insulating layer made of an insulating material and a second insulating layer made of an insulating material and disposed on the first insulating layer. 2. The magnetic sensor of claim 1, comprising: The at least one magnetic detection element has a lower surface facing the inclined surface, an upper surface opposite to the lower surface, and first and second side surfaces connecting the lower surface and the upper surface. ,
the first insulating layer of the first insulating portion is in contact with the first side surface;
13. The magnetic sensor according to claim 12, wherein said first insulating layer of said second insulating portion is in contact with said second side surface.

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