JP2023041342A5 - - Google Patents

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JP2023041342A5
JP2023041342A5 JP2021148660A JP2021148660A JP2023041342A5 JP 2023041342 A5 JP2023041342 A5 JP 2023041342A5 JP 2021148660 A JP2021148660 A JP 2021148660A JP 2021148660 A JP2021148660 A JP 2021148660A JP 2023041342 A5 JP2023041342 A5 JP 2023041342A5
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control signal
abnormality detection
input
signal
signal output
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JP2023041342A (en
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Priority to JP2021148660A priority Critical patent/JP2023041342A/en
Priority claimed from JP2021148660A external-priority patent/JP2023041342A/en
Priority to PCT/JP2022/031102 priority patent/WO2023037833A1/en
Publication of JP2023041342A publication Critical patent/JP2023041342A/en
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このように構成すれば、外部より強制ON指令が入力されることで、制御信号半導体素子をONにする制御信号となり、これに伴い素子異常検出部が半導体素子の駆動状態に関する異常を検出しても、無効化信号が入力されることで異常検出信号の出力が停止される。したがって、駆動信号出力部は、強制ON指令の入力に従って半導体素子をONにする駆動信号の出力を継続することが可能になる。 With this configuration, when a forced ON command is input from the outside, the control signal becomes a control signal that turns on the semiconductor element, and accordingly, the element abnormality detection section detects an abnormality regarding the driving state of the semiconductor element. However, the output of the abnormality detection signal is stopped by inputting the invalidation signal. Therefore, the drive signal output section can continue to output the drive signal that turns on the semiconductor element in accordance with the input of the forced ON command.

Claims (7)

半導体素子をON/OFFする制御信号に応じて、前記半導体素子に駆動信号を出力する駆動信号出力部(8)と、
前記半導体素子の駆動状態に関する異常を検出し、素子異常検出信号を前記駆動信号出力部に出力する素子異常検出部(9,9NA)と、
外部より強制ON指令が入力されると、前記異常の検出を無効化する無効化信号を前記素子異常検出部に出力する無効化信号出力部(7)とを備え、
前記制御信号は、前記強制ON指令が入力されると前記半導体素子をONにする制御信号となり
前記駆動信号出力部は、前記素子異常検出信号が入力されると前記半導体素子をONにする駆動信号の出力を停止し、
前記素子異常検出部は、前記無効化信号が入力されると、前記異常検出信号の出力を停止する半導体素子の駆動回路。
a drive signal output section (8) that outputs a drive signal to the semiconductor element in accordance with a control signal that turns the semiconductor element ON/OFF;
an element abnormality detection unit (9, 9NA) that detects an abnormality regarding the driving state of the semiconductor element and outputs an element abnormality detection signal to the drive signal output unit;
and a disabling signal output section (7) that outputs a disabling signal for disabling detection of the abnormality to the element abnormality detecting section when a forced ON command is input from the outside,
The control signal becomes a control signal that turns on the semiconductor element when the forced ON command is input,
The drive signal output section stops outputting a drive signal that turns on the semiconductor element when the element abnormality detection signal is input,
The element abnormality detection section is a semiconductor element drive circuit that stops outputting the abnormality detection signal when the invalidation signal is input.
前記制御信号を出力する制御信号出力部(6,6A)を備える請求項1記載の半導体素子の駆動回路。The semiconductor device drive circuit according to claim 1, further comprising a control signal output section (6, 6A) that outputs the control signal. 前記素子異常検出部は、素子異常検出信号を前記制御信号出力部にも出力し、
前記制御信号出力部は、前記素子異常検出信号が入力されると前記半導体素子をONにする制御信号の出力を停止する請求項1又は2記載の半導体素子の駆動回路。
The element abnormality detection section also outputs an element abnormality detection signal to the control signal output section,
3. The drive circuit for a semiconductor device according to claim 1 , wherein the control signal output section stops outputting a control signal for turning on the semiconductor device when the device abnormality detection signal is input.
前記素子異常検出部を除く周辺回路の動作を監視し、前記動作に異常が発生すると回路異常検出信号を前記制御信号出力部に出力する回路異常検出部(22)を備え、
前記制御信号出力部は、前記回路異常検出信号が入力されると前記半導体素子をONにする制御信号の出力を停止し、
前記無効化信号出力部は、外部より強制ON指令が入力されると、前記無効化信号を前記回路異常検出部にも出力し、
前記回路異常検出部は、前記無効化信号が入力されると、前記回路異常検出信号の出力を停止する請求項1から3の何れか一項に記載の半導体素子の駆動回路。
A circuit abnormality detection unit (22) that monitors the operation of peripheral circuits other than the element abnormality detection unit and outputs a circuit abnormality detection signal to the control signal output unit when an abnormality occurs in the operation,
The control signal output unit stops outputting a control signal for turning on the semiconductor element when the circuit abnormality detection signal is input,
The disabling signal output section also outputs the disabling signal to the circuit abnormality detecting section when a forced ON command is input from the outside,
4. The semiconductor device drive circuit according to claim 1, wherein the circuit abnormality detection section stops outputting the circuit abnormality detection signal when the invalidation signal is input.
半導体素子をON/OFFする制御信号を出力する制御信号出力部(6B)と、
前記制御信号に応じて、前記半導体素子に駆動信号を出力する駆動信号出力部(8B)と、
前記半導体素子の駆動状態に関する異常を検出し、素子異常検出信号を前記制御信号出力部及び前記駆動信号出力部に出力する素子異常検出部(9B)と、
外部より強制ON指令が入力されると、前記異常の検出を無効化する無効化信号を前記制御信号出力部に出力する無効化信号出力部(7)とを備え、
前記駆動信号出力部は、前記素子異常検出信号が入力されると前記半導体素子をONにする駆動信号の出力を停止し、
前記素子異常検出部は、前記無効化信号が入力されると、前記駆動信号出力部に対する異常検出信号の出力を停止し、
前記制御信号出力部は、
前記素子異常検出信号が入力されると、前記強制ON指令が入力されていないことを条件として前記半導体素子をONにする制御信号の出力を停止し、
前記強制ON指令が入力されている期間に前記素子異常検出信号が入力されると前記ONにする制御信号を出力する半導体素子の駆動回路。
a control signal output section (6B) that outputs a control signal to turn on/off the semiconductor element;
a drive signal output section (8B) that outputs a drive signal to the semiconductor element according to the control signal;
an element abnormality detection section (9B) that detects an abnormality regarding the driving state of the semiconductor element and outputs an element abnormality detection signal to the control signal output section and the drive signal output section;
and a disabling signal output section (7) that outputs a disabling signal for disabling detection of the abnormality to the control signal output section when a forced ON command is input from the outside,
The drive signal output section stops outputting a drive signal that turns on the semiconductor element when the element abnormality detection signal is input,
When the invalidation signal is input, the element abnormality detection section stops outputting the abnormality detection signal to the drive signal output section,
The control signal output section includes:
When the element abnormality detection signal is input, stopping output of a control signal to turn on the semiconductor element on the condition that the forced ON command is not input;
A drive circuit for a semiconductor device that outputs a control signal to turn on the device when the device abnormality detection signal is input during a period when the forced ON command is input.
前記回路異常検出部(9NA)に入力される無効化信号は、当該回路異常検出部を介して前記制御信号出力部(6A)にも入力されるように構成され、
前記制御信号出力部は、前記半導体素子をONにする制御信号を出力している際に、前記強制ON指令が入力されていない状態で前記無効化信号が入力されると、前記制御信号の出力を停止する請求項1からの何れか一項に記載の半導体素子の駆動回路。
The disabling signal input to the circuit abnormality detection section (9NA) is configured to be also input to the control signal output section (6A) via the circuit abnormality detection section,
The control signal output unit outputs the control signal when the disabling signal is input while the forced ON command is not input while outputting the control signal to turn on the semiconductor element. 6. The drive circuit for a semiconductor device according to claim 1, wherein the drive circuit for a semiconductor device stops the operation.
半導体素子をON/OFFする制御信号を出力する制御信号出力部(6)と、
前記半導体素子の駆動状態に関する異常を検出し、素子異常検出信号を前記制御信号出力部に出力する素子異常検出部(9)とを備え、
前記制御信号出力部は、前記素子異常検出信号が入力されると前記半導体素子をONにする制御信号の出力を停止し、
外部より強制ON指令が入力されると、前記制御信号出力部による制御信号の出力状態に関わらず、前記半導体素子をONにする強制ON信号を出力する強制ON信号出力部(34)を更に備える半導体素子の駆動回路。
a control signal output section (6) that outputs a control signal to turn on/off the semiconductor element;
an element abnormality detection section (9) that detects an abnormality regarding the driving state of the semiconductor element and outputs an element abnormality detection signal to the control signal output section;
The control signal output unit stops outputting a control signal for turning on the semiconductor element when the element abnormality detection signal is input,
The device further includes a forced ON signal output unit (34) that outputs a forced ON signal that turns on the semiconductor element when a forced ON command is input from the outside, regardless of the output state of the control signal by the control signal output unit. Semiconductor device drive circuit.
JP2021148660A 2021-09-13 2021-09-13 Driving circuit of semiconductor element Pending JP2023041342A (en)

Priority Applications (2)

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JP2021148660A JP2023041342A (en) 2021-09-13 2021-09-13 Driving circuit of semiconductor element
PCT/JP2022/031102 WO2023037833A1 (en) 2021-09-13 2022-08-17 Driving circuit for semiconductor elements

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JP2023041342A5 true JP2023041342A5 (en) 2023-10-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014225780A (en) * 2013-05-16 2014-12-04 株式会社デンソー Load drive device
US10525841B2 (en) * 2016-10-12 2020-01-07 Ford Global Technologies, Llc Gate driver with short circuit protection
US10910815B2 (en) * 2017-04-25 2021-02-02 Hitachi Automotive Systems, Ltd. Electronic control unit

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